JPH0558768A - Production of single crystal - Google Patents

Abstract

PURPOSE:To reduce cost in the ZMR method, to easily obtain a large size single crystal in the CZ method and to make a wide and long single crystal plate or thin film possible in the Slab method in a production method of the single crystal. CONSTITUTION:(1) A solid material film made from the 2nd polycrystalline film or an amorphous film is applied on the 1st solid surface and a single crystal breeding seed is brought into contact with the surface of the 2nd solid material film, and the 2nd solid material film is practically and continuously melted and solidified by cooling process to form the single crystal from the contact part. (2) The 2nd single crystal breeding seed is brought into contact with the 1st fused solid surface and the 1st fused solid body is practically and continuously solidified by cooling process to form the single crystal from the contact part. (3) The 1st fused solid sprue is formed by the 2nd single crystal solid body and the 1st fused solid body is practically and continuously solidified by cooling process to form the single crystal from the contact part of the 2nd single crystal solid body sprue.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel method for producing a semiconductor single crystal or a single crystal film.

[0002]

Conventionally, as a method for manufacturing a semiconductor single crystal or a single crystal film, (1) ZMR (Z one M elting R ecr
YSTALLIZATION-PROCESS): A single-crystal growing seed is placed on the first solid surface, and a semiconductor film made of a second polycrystalline film or an amorphous film is formed on the first solid surface. The second semiconductor film is brought into contact with the crystal growth seeds, and the second semiconductor film is substantially continuously solidified from the contact portion of the single crystal growth seeds by solidification by a melting and cooling process. Method of single crystallization. Reference material: USP 457,851, Japanese Patent Publication 58-2079
4.

(2) CZ ( Cz ochralski)
Method: A single crystal growing seed made of the first semiconductor is in contact with the surface of the first semiconductor melt, and the first semiconductor melt is substantially continuous from the contact portion of the single crystal growing seed. A method of forming a single crystal by solidification in the cooling process.

(3) Slab method: The first solid melt spout is formed of the second solid, and the first solid melt is substantially continuous from the contact portion of the second solid spout. The method of single crystal formation by solidification by cooling process.

There was such a thing.

[0006]

However, according to the above-mentioned prior art, (1) in the ZMR method, one or one single crystal growth seed is always required to form one or one semiconductor film. However, there was a problem of high cost. It is an object of the present invention to reduce the cost improvement factor of the ZMR method.

(2) In the CZ method, for example, when pulling a Si single crystal ingot, a thin Si single crystal is used as a single crystal seed, so that the load capacity is small and a large diameter Si single crystal ingot is continuous or long. There was a problem that things could not be done. An object of the present invention is to provide a method capable of easily performing large-scale single crystallization in the CZ method.

(3) The Slab method has a problem that a wide and long single crystal plate or single crystal film cannot be formed. An object of the present invention is to solve the problems of the Slab method and provide a method capable of forming a wide and long single crystal plate or single crystal film.

[0009]

In order to solve the above problems and achieve the above objects, the present invention relates to a method for producing a single crystal, which comprises: (1) a second polycrystalline film or a second polycrystalline film on a first solid surface. A solid material film made of an amorphous film is coated, a single crystal growing seed is brought into contact with the surface of the second solid material film, and the second solid material film is substantially contacted with the contact portion of the single crystal growing seed. (2) a means for performing single crystallization by continuous solidification by a melting and cooling process and performing single crystallization on at least the surface of the solid material film; and (2) a second single crystal on the first solid melt surface. And a means for contacting the crystal-growing seeds, and substantially single-crystallizing the first solid melt from the contact portion of the single crystal-growing seeds by solidification by a cooling process, and (3) ) The first solid melt spout is made into the second single crystal solid Formed, taking the means of the single crystal by solidification by substantially continuously cooling process the first solid molten material from the contact portion of the single crystal solid sprue second, taking the means equal.

[0010]

EXAMPLES The present invention will be described in detail below with reference to examples.

FIG. 1 is a sectional view of a manufacturing method showing a ZMR method according to the present invention.

Now, CVD is performed on the surface of the substrate 1 made of quartz.
Forming a semiconductor film 2 made of polycrystalline Si or amorphous Si to a thickness of about 0.1 to 2 microns, and forming a single crystal Si or a single crystal SiC on a part of the surface thereof.
While applying a single crystal seed 3 consisting of, heating to a temperature above the melting point of Si at the contact portion between the single crystal seed 3 and the semiconductor film 2, and moving scanning while melting the semiconductor film 2, A single crystal film is manufactured by substantially continuously performing single crystallization by solidification by melting and cooling processes. The semiconductor film is not limited to Si, and may be another semiconductor film such as Ge, GaAs, InP, etc., and the single crystal seed may be sapphire other than SiC. In the case of the Ge, GaAs, InP film, It may be Si or the like having a melting point equal to or higher than that. Further, the substrate is not limited to quartz, but may be ceramic, heat-resistant glass, heat-resistant alloy, metal, or a composite material thereof.

FIG. 2 is a sectional view of a manufacturing method showing the CZ method according to the present invention.

Now, the quartz crucible 11 is filled with molten Si 12 and a single crystal seed 14 made of single crystal SiC is added to the molten S.
After being brought into contact with the surface of i12, the single crystal Si ingot 13 is grown by pulling it while slowly rotating it. The semiconductor is not limited to Si, but Ge, GaAs, In
Other semiconductors such as P may be used, and the single crystal seed may be sapphire in addition to SiC, Ge, GaAs, InP.
In this case, Si or the like having a melting point equal to or higher than that may be used. Further, the crucible is not limited to quartz, but may be ceramic, heat-resistant glass, heat-resistant alloy, metal, or a composite material thereof.

FIG. 3 is a sectional view of a manufacturing method showing the Slab method according to the present invention.

Now, when the molten Si22 is filled in the quartz crucible 21 and the single crystal seed 24 made of single crystal SiC is used as a sprue and the molten Si22 is pulled out from the sprue while being cooled, depending on the shape of the sprue, 10 to 500 microns or In addition, the thickness of the single crystal Si plate or Si film is 25
It is possible to manufacture products with a width of 1 mm width or more.

The semiconductor is not limited to Si, but Ge, GaA
Other semiconductors such as s and InP may be used, and the single crystal seed may be sapphire other than SiC. Ge, GaA
In the case of s and InP, Si or the like having a melting point equal to or higher than that may be used. Further, the crucible is not limited to quartz, but may be ceramic, heat-resistant glass, heat-resistant alloy, metal, or a composite material thereof.

The present invention is not limited to semiconductor single crystals, but can be used for the production of single crystals such as ceramics, metals or organic substances, and single crystal films.

[0019]

According to the present invention, the factor of cost improvement by the ZMR method can be reduced, and large single crystallization by the CZ method can be easily performed, and Sl
In the ab method, there is an effect that a wide and long single crystal plate or a single crystal film can be formed.

[Brief description of drawings]

FIG. 1 is a sectional view of a manufacturing method showing a ZMR method according to the present invention.

FIG. 2 is a sectional view of a manufacturing method showing a CZ method according to the present invention.

FIG. 3 is a sectional view of a manufacturing method showing a Slab method according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Semiconductor film 3, 14, 24 ... Single crystal seed 11, 21 ... Quartz crucible 12, 22 ... Molten Si 13 ... Si ingot 23 ... Si plate Or Si film

Claims (3)

[Claims] 1. A first solid surface is coated with a solid material film composed of a second polycrystalline film or an amorphous film, and a single crystal growing seed is in contact with the surface of the second solid material film. From the contact portion of the single crystal growing seed to the second
The method for producing a single crystal, wherein the solid material film is substantially continuously monocrystallized by solidification in a melting and cooling process, and at least the surface of the solid material film is monocrystallized. 2. A first solid melt surface is contacted with a second single crystal growing seed, and the first solid melt is substantially continuously contacted from the contact portion of the single crystal growing seed. A method for producing a single crystal, which is characterized in that a single crystal is formed by solidification in a cooling process. 3. A first solid melt spout is formed of a second single crystal solid spout, and the first solid melt is substantially continuous from a contact portion of the second single crystal solid spout. A method for producing a single crystal, characterized in that the single crystal is formed by solidification in a cooling process.