JPH0558272B2 - - Google Patents
Info
- Publication number
- JPH0558272B2 JPH0558272B2 JP17060483A JP17060483A JPH0558272B2 JP H0558272 B2 JPH0558272 B2 JP H0558272B2 JP 17060483 A JP17060483 A JP 17060483A JP 17060483 A JP17060483 A JP 17060483A JP H0558272 B2 JPH0558272 B2 JP H0558272B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- spherical lens
- resin
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は発光素子と球形レンズを組み合わせ
ることにより鋭い発光指向性を有する発光ダイオ
ードに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a light emitting diode that has sharp light emission directivity by combining a light emitting element and a spherical lens.
近年、光を利用した情報伝送が盛んになり、例
えば光フアイバーと発光ダイオード（LED）と
の結合に関しては各所で開発が進められている。
LEDから出射された光を有効に光フアイバーに
導入する工夫として、発光素子に球レンズを固着
する方法が既に知られており、1977年の７月に発
行されたIEEETransaction on Electron
Devices vol ED−24.No.７に記載されている。こ
れを引例として以下簡単に説明する。
In recent years, information transmission using light has become popular, and for example, development of combinations of optical fibers and light emitting diodes (LEDs) is progressing in various places.
As a method of effectively introducing light emitted from an LED into an optical fiber, a method of fixing a ball lens to a light emitting element is already known, and this method was published in IEEE Transaction on Electron in July 1977.
It is described in Devices vol ED-24.No.7. This will be briefly explained below using this as an example.
第１図はLEDの断面図で、光取り出し部上に
球レンズを設けたものである。第１図において、
発光素子１は基台２上にハンダ３で固着されてお
り、発光素子１上には球レンズ４がエポキシ樹脂
５で固定されている。発光素子１は次に述べる構
造となつており、電流集中の起こる箇所６で強い
発光が得られるものである。まずｎ型GaAs基板
１１上にｎ型GaAlAsのクラツド層１２を結晶成
長し、順次ｐ型GaAs活性層１３、ｐ型GaAlAs
窓層１４、ｎ型GaAlAsバリア層１５を液相成長
法で各々数ミクロンメータの厚さに結晶成長す
る。次にｎ型GaAlAsバリア層１５に穴を設け、
その表面からZnを拡散して拡散層１６を形成し、
電極１７及び１８を設けた発光素子構造となつて
いる。球レンズ４はサフアイア製で光学的に優れ
た研磨をしたもので極めて高価なものである。従
つて完成したLEDの製品価格の大部分を占める
場合もあり、LEDの低廉化に対して問題であつ
た。又、球レンズ材料を光学ガラスにした場合に
おいても研磨に多大な労力を必要とする点で同様
である。さらに、第１図においては球レンズを位
置合わせするごとく発光素子に穴を設けてあり、
発光素子と球レンズとの固着力は比較的強いが、
穴のない発光素子であつた場合機械的強度に対し
て弱く、球レンズの脱落問題が生じ易かつた。 Figure 1 is a cross-sectional view of an LED, in which a ball lens is provided on the light extraction part. In Figure 1,
A light emitting element 1 is fixed on a base 2 with solder 3, and a ball lens 4 is fixed on the light emitting element 1 with an epoxy resin 5. The light emitting element 1 has the structure described below, and is capable of emitting strong light at a location 6 where current concentration occurs. First, an n-type GaAlAs cladding layer 12 is crystal-grown on an n-type GaAs substrate 11, and then a p-type GaAs active layer 13, a p-type GaAlAs
The window layer 14 and the n-type GaAlAs barrier layer 15 are each crystal-grown to a thickness of several micrometers by liquid phase growth. Next, holes are formed in the n-type GaAlAs barrier layer 15,
Diffusing Zn from the surface to form a diffusion layer 16,
It has a light emitting element structure in which electrodes 17 and 18 are provided. The ball lens 4 is made of sapphire, polished for excellent optical performance, and is extremely expensive. Therefore, it sometimes accounts for a large portion of the product price of a completed LED, which has been a problem in efforts to lower the cost of LEDs. Similarly, even when optical glass is used as the ball lens material, a great deal of effort is required for polishing. Furthermore, in Figure 1, a hole is provided in the light emitting element to align the ball lens.
Although the adhesion between the light emitting element and the ball lens is relatively strong,
If the light emitting element had no holes, it would be weak in terms of mechanical strength, and the problem of the ball lens falling off would easily occur.
この発明の目的は発光素子上に設ける球レンズ
に極めて安価な材料を用いて従来の特性に劣らな
いLEDを提供し、しかも球レンズの脱落を防止
したLEDを提供することである。
An object of the present invention is to provide an LED that uses an extremely inexpensive material for a ball lens provided on a light emitting element, and has characteristics comparable to those of conventional LEDs, and also to provide an LED in which the ball lens is prevented from falling off.
本発明は発光素子の光取りだし部上に球形レン
ズを設けてなる発光ダイオードにおいて、前記発
光素子と前記球形レンズとを固着する樹脂が前記
球形レンズの表面全体を被覆した事を特徴とする
発光ダイオードを提供するものである。
The present invention provides a light emitting diode comprising a spherical lens provided on a light extraction portion of a light emitting element, characterized in that the entire surface of the spherical lens is covered with a resin that fixes the light emitting element and the spherical lens. It provides:
この発明によれば、第１に、球レンズ表面に無
数の傷のあるようなものであつても、球レンズ表
面に樹脂皮膜を被覆したことによつて、光学的研
磨によつて得られた球レンズに相当する光学的特
性が得られ、従つて極めて安価な球レンズを採用
でき、LEDの低廉化が可能となつた。
According to this invention, firstly, even if there are countless scratches on the surface of the spherical lens, by coating the surface of the spherical lens with a resin film, the surface of the spherical lens can be removed by optical polishing. Optical characteristics equivalent to those of a ball lens were obtained, and therefore an extremely inexpensive ball lens could be used, making it possible to reduce the cost of LEDs.
第２に、球レンズを包み込むように樹脂皮膜を
形成したことによつて、球レンズの脱落を防止で
き、従つて苛酷な条件下での利用が可能となつ
た。 Second, by forming the resin film so as to envelop the ball lens, it is possible to prevent the ball lens from falling off, thus making it possible to use it under severe conditions.
以下本発明の第１の実施例を第２図を参照して
説明する。第２図は本発明のLEDの断面図で、
次のような構成となつている。まず、放熱効果の
ある金属基台２１上に発光素子２２か電極及び低
融点金属２３で固着されており、発光素子２２の
光取り出し部２４上に球レンズ２５を樹脂２６で
固定したものである。発光素子２２は次のように
構成したもので、電流集中による強い発光の得ら
れるものである。まずｐ型GaAs基板２２１上に
ｎ型GaAs結晶層２２２を約5μm液相成長法によ
つて形成し、このGaAs結晶層２２２の一部にホ
トエングレイビングプロセス（PEP）を利用し
て穴２２３を設ける。次にこの上にｐ型GaAlAs
層２２４、ｐ型GaAlAs活性層２２５、ｎ型
GaAlAs層２２６を順次液相成長法によつてそれ
ぞれ1μm〜数μmの厚さに形成する。次にｎ型電
極２２７及びｐ型電極２３を形成し、ｎ型電極２
２７に光取り出し用窓をPEP技術を利用して設
ける。この発光素子を基台２１上に固着した後球
レンズ２５をシリコーン樹脂２６で固定する。固
定する方法は、まず発光素子上に液状の樹脂を少
量載せ、次に球レンズ２５を樹脂上に落とす。そ
こで球レンズ２５を回転させて表面に樹脂皮膜を
形成し、その状態で昇温して樹脂を硬化させる。
硬化した樹脂は第２図に示ごとく球レンズ表面に
皮膜を作り、球レンズ２６に傷２６１があつた場
合においても実質的には研磨した球レンズに相当
する滑らかな球表面が得られる。しかも機械的震
動に対しても強く、民需用への適用が可能となつ
た。
A first embodiment of the present invention will be described below with reference to FIG. Figure 2 is a cross-sectional view of the LED of the present invention.
The structure is as follows. First, a light emitting element 22 is fixed on a metal base 21 having a heat dissipating effect with electrodes and a low melting point metal 23, and a ball lens 25 is fixed on a light extraction part 24 of the light emitting element 22 with a resin 26. . The light emitting element 22 is constructed as follows and is capable of emitting strong light due to current concentration. First, an n-type GaAs crystal layer 222 of approximately 5 μm is formed on a p-type GaAs substrate 221 by liquid phase growth, and a hole 223 is formed in a part of this GaAs crystal layer 222 using a photoengraving process (PEP). establish. Next, p-type GaAlAs is placed on top of this.
layer 224, p-type GaAlAs active layer 225, n-type
GaAlAs layers 226 are sequentially formed by liquid phase growth to a thickness of 1 μm to several μm. Next, an n-type electrode 227 and a p-type electrode 23 are formed, and the n-type electrode 227 and the p-type electrode 23 are formed.
A light extraction window is provided at 27 using PEP technology. After fixing this light emitting element onto a base 21, a rear spherical lens 25 is fixed with silicone resin 26. The fixing method is to first place a small amount of liquid resin on the light emitting element, and then drop the ball lens 25 onto the resin. Therefore, the ball lens 25 is rotated to form a resin film on its surface, and in this state, the temperature is raised to harden the resin.
The cured resin forms a film on the surface of the spherical lens as shown in FIG. 2, and even if the spherical lens 26 has a scratch 261, a smooth spherical surface substantially equivalent to a polished spherical lens can be obtained. Furthermore, it is resistant to mechanical vibrations, making it possible to apply it to civilian use.
次に第２の実施例を第３図を参照して説明す
る。第３図は第２図同様に構成したLEDである
為、発光素子部の説明を省略する。第３図におい
て、発光素子３１上に設けた球レンズ３２上を第
１の樹脂３３で一旦固定した後にエポキシ樹脂あ
るいはシリコーン樹脂３４を球レンズ表面に滴下
して皮膜したものである。この場合、球レンズに
通常のガラス玉を用いれば、エポキシ樹脂及びシ
リコーン樹脂とガラス玉との屈折率はそれぞれ約
1.5であり、傷のある球レンズで光の散乱による
光結合損失の多かったものが実質的球レンズとな
る本発明の構成によつて光結合効率が向上した。 Next, a second embodiment will be described with reference to FIG. Since FIG. 3 shows an LED constructed in the same manner as in FIG. 2, explanation of the light emitting element portion will be omitted. In FIG. 3, a ball lens 32 provided on a light emitting element 31 is once fixed with a first resin 33, and then an epoxy resin or silicone resin 34 is dropped onto the surface of the ball lens to form a film. In this case, if ordinary glass beads are used for the spherical lens, the refractive index of the epoxy resin, silicone resin, and glass beads will be approximately
1.5, and the optical coupling efficiency was improved by the structure of the present invention, in which a ball lens with scratches and which had a large optical coupling loss due to light scattering became a substantial spherical lens.
なお第１及び第２の実施例において、LEDの
発光を得るためには、ｎ型電極とｐ型電極間に約
２ボルトの電圧を印加すれば良く、微視的に見れ
ば、球レンズ直下のｐ型GaAlAs活性層２２５に
電流集中が起こり、強い発光が観測される。 In the first and second embodiments, in order to obtain light emission from the LED, it is sufficient to apply a voltage of about 2 volts between the n-type electrode and the p-type electrode. Current concentration occurs in the p-type GaAlAs active layer 225, and strong light emission is observed.
第１図は従来のLEDを説明するための断面図、
第２図は本発明のLEDの第１の実施例を説明す
るための断面図、第３図は本発明のLEDの第２
の実施例を説明するための断面図である。
２，２１……基台、１，２２，３１……発光素
子、４，２５，３２……球形レンズ、５，２６，
３３，３４……樹脂。
Figure 1 is a cross-sectional diagram to explain a conventional LED.
FIG. 2 is a sectional view for explaining the first embodiment of the LED of the present invention, and FIG. 3 is a cross-sectional view of the second embodiment of the LED of the present invention.
FIG. 2, 21... Base, 1, 22, 31... Light emitting element, 4, 25, 32... Spherical lens, 5, 26,
33, 34...Resin.
Claims (1)
けてなる発光ダイオードにおいて、前記発光素子
と前記球形レンズとを固着する樹脂が前記球形レ
ンズの表面全体を被覆した事を特徴とする発光ダ
イオード。 ２ 前記発光素子がGaAsおよびGaAlAsを材料
としたダブルヘテロ型発光素子であつて、球形レ
ンズがガラスを材料としたレンズであることを特
徴とする特許請求の範囲第１項記載の発光ダイオ
ード。 ３ 前記樹脂が、前記発光素子の光取り出し部上
に球形レンズを固定する第１の樹脂と、前記発光
素子の表面を被覆し、且つ球形レンズの屈折率を
有する第２の樹脂から成ることを特徴とする特許
請求の範囲第１項記載の発光ダイオード。[Scope of Claims] 1. A light emitting diode including a spherical lens provided on a light extraction portion of a light emitting element, characterized in that a resin that fixes the light emitting element and the spherical lens covers the entire surface of the spherical lens. light emitting diode. 2. The light emitting diode according to claim 1, wherein the light emitting element is a double hetero type light emitting element made of GaAs and GaAlAs, and the spherical lens is a lens made of glass. 3. The resin includes a first resin that fixes a spherical lens on the light extraction portion of the light emitting element, and a second resin that covers the surface of the light emitting element and has a refractive index of the spherical lens. A light emitting diode according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58170604A JPS6063969A (en) | 1983-09-17 | 1983-09-17 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58170604A JPS6063969A (en) | 1983-09-17 | 1983-09-17 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6063969A JPS6063969A (en) | 1985-04-12 |
| JPH0558272B2 true JPH0558272B2 (en) | 1993-08-26 |
Family
ID=15907929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58170604A Granted JPS6063969A (en) | 1983-09-17 | 1983-09-17 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063969A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015064178A1 (en) * | 2013-10-31 | 2015-05-07 | 住友電気工業株式会社 | Concentrator photovoltaic unit, concentrator photovoltaic module, concentrator photovoltaic panel, and concentrator photovoltaic device |
| JP6507915B2 (en) | 2015-08-03 | 2019-05-08 | 住友電気工業株式会社 | Concentrated solar power generation unit, concentrated solar power generation module, concentrated solar power generation panel, concentrated solar power generation apparatus |
| JP6561661B2 (en) * | 2015-08-03 | 2019-08-21 | 住友電気工業株式会社 | Concentrating solar power generation unit, concentrating solar power generation module, concentrating solar power generation panel, and concentrating solar power generation device |
-
1983
- 1983-09-17 JP JP58170604A patent/JPS6063969A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6063969A (en) | 1985-04-12 |
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