JPH0556873B2 - - Google Patents
Info
- Publication number
- JPH0556873B2 JPH0556873B2 JP60269715A JP26971585A JPH0556873B2 JP H0556873 B2 JPH0556873 B2 JP H0556873B2 JP 60269715 A JP60269715 A JP 60269715A JP 26971585 A JP26971585 A JP 26971585A JP H0556873 B2 JPH0556873 B2 JP H0556873B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- pbo
- photoconductive
- light
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 32
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- -1 hydrogen compound Chemical class 0.000 description 11
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 7
- 239000011669 selenium Substances 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910052949 galena Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 3
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60269715A JPS62128574A (ja) | 1985-11-29 | 1985-11-29 | 光導電素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60269715A JPS62128574A (ja) | 1985-11-29 | 1985-11-29 | 光導電素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62128574A JPS62128574A (ja) | 1987-06-10 |
| JPH0556873B2 true JPH0556873B2 (enrdf_load_stackoverflow) | 1993-08-20 |
Family
ID=17476158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60269715A Granted JPS62128574A (ja) | 1985-11-29 | 1985-11-29 | 光導電素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62128574A (enrdf_load_stackoverflow) |
-
1985
- 1985-11-29 JP JP60269715A patent/JPS62128574A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62128574A (ja) | 1987-06-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4255686A (en) | Storage type photosensor containing silicon and hydrogen | |
| US6509066B1 (en) | Sensitized photoconductive infrared detectors | |
| Schottmiller | Photoconductivity in tetragonal and orthorhombic lead monoxide layers | |
| US3860956A (en) | Color target and method of manufacturing same | |
| EP0029679B1 (en) | Photoelectric device | |
| JP2000196134A (ja) | 可視―ブラインドｕｖ検出器 | |
| US4463279A (en) | Doped photoconductive film comprising selenium and tellurium | |
| US3571646A (en) | Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride | |
| JPH0556873B2 (enrdf_load_stackoverflow) | ||
| US4068253A (en) | Photoconductor element and method of making the element | |
| US4626885A (en) | Photosensor having impurity concentration gradient | |
| US4488083A (en) | Television camera tube using light-sensitive layer composed of amorphous silicon | |
| US4380557A (en) | Method of production of image pickup device | |
| KR900001981B1 (ko) | 반도체막의 제조 방법 | |
| JPS645740B2 (enrdf_load_stackoverflow) | ||
| Fujiwara et al. | The heterojunction ZnSe-(Zn1− xCdxTe) 1− y (In2Te3) y having high sensitivity in the visible light range and its applications | |
| US4021375A (en) | Method of fabricating polycrystalline selenium imaging devices | |
| US4457949A (en) | Method of producing a photoelectric conversion layer | |
| JPH0480497B2 (enrdf_load_stackoverflow) | ||
| US4132918A (en) | Polycrystalline selenium imaging devices | |
| JPH0129297B2 (enrdf_load_stackoverflow) | ||
| Wooten | Role of MnO Substrates in Enhanced Photoemission from Cs3Sb | |
| PART | CENTRAL RESEARCH LABORATORY HITACHI, LTD. TOKYO, JAPAN INTRODUCTION I. II. a-Si: H IMAGE PICKUP TUBE | |
| Ishioka | Image Pickup Tubes | |
| KR100525169B1 (ko) | ＨｇＣｄＴｅ 광다이오드 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |