JPH0555607A - Organic film diode - Google Patents
Organic film diodeInfo
- Publication number
- JPH0555607A JPH0555607A JP3215746A JP21574691A JPH0555607A JP H0555607 A JPH0555607 A JP H0555607A JP 3215746 A JP3215746 A JP 3215746A JP 21574691 A JP21574691 A JP 21574691A JP H0555607 A JPH0555607 A JP H0555607A
- Authority
- JP
- Japan
- Prior art keywords
- diode
- thin film
- semiconductor
- aromatic compound
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ダイオードに関するも
のである。FIELD OF THE INVENTION The present invention relates to a diode.
【０００２】[0002]
【従来の技術】これまでＳｉ、Ｇｅなどの無機材料を用
いた半導体ダイオードが知られている。これらのダイオ
ードは半導体のｐ−ｎ接合、ＭＩＳ（金属−絶縁体−半
導体）構造を用いたものであり、それにより順方向と逆
方向の電気的特性が変化し、整流特性を示すものであ
る。有機材料を用いたダイオードは考案されているが、
通常有機薄膜の薄膜形成が困難であるため作製がむずか
しかった。2. Description of the Related Art Up to now, a semiconductor diode using an inorganic material such as Si or Ge has been known. These diodes use a semiconductor pn junction and a MIS (metal-insulator-semiconductor) structure, whereby the electrical characteristics in the forward direction and the reverse direction are changed, and rectification characteristics are exhibited. . Although diodes using organic materials have been devised,
Since it is usually difficult to form an organic thin film, it is difficult to manufacture.
【０００３】[0003]
【発明が解決しようとする課題】本発明の課題は、整流
性に優れたダイオードを提供することを目的とするもの
である。SUMMARY OF THE INVENTION An object of the present invention is to provide a diode excellent in rectifying property.
【０００４】[0004]
【課題を解決するための手段】本発明者は、薄膜形成能
の優れた有機薄膜を用いたダイオードを得るべく鋭意検
討を重ねた結果、有機半導体である芳香族化合物の良質
の薄膜を半導体基板上に形成させた有機薄膜ダイオード
を見い出し、本発明を成すに至った。すなわち本発明
は、縮合したベンゼン環の数が４以上１３以下である縮
合多環芳香族化合物薄膜と無機半導体とを接合すること
を特徴とする有機薄膜ダイオードである。本発明のダイ
オードは無機半導体と縮合多環芳香族化合物の薄膜が接
合した構造を有し、その電気的特性を用いるものであ
る。The present inventor has conducted extensive studies to obtain a diode using an organic thin film having an excellent thin film forming ability. As a result, a good quality thin film of an aromatic compound which is an organic semiconductor is formed on a semiconductor substrate. The organic thin film diode formed above was found, and the present invention was accomplished. That is, the present invention is an organic thin-film diode characterized by joining a condensed polycyclic aromatic compound thin film having 4 to 13 condensed benzene rings and an inorganic semiconductor. The diode of the present invention has a structure in which a thin film of an inorganic semiconductor and a condensed polycyclic aromatic compound are joined, and uses its electrical characteristics.
【０００５】本発明に用いる縮合多環芳香族化合物につ
いて説明する。本発明に用いる縮合多環芳香族化合物
は、その縮合したベンゼン環の数が４以上１３以下の化
合物またはそれらの混合物である。このような化合物と
して例えば、ナフタセン、ペンタセン、ヘキサセン、ヘ
プタセン、ジベンゾペンタセン、テトラベンゾペンタセ
ン、ピレン、ジベンゾピレン、クリセン、ペリレン、コ
ロネン、テリレン、オバレン、クオテリレン、サーカム
アントラセンなどを挙げることができる。これらの化合
物の炭素に一部をＮ、Ｓ、Ｏなどの原子、カルボニル基
などの官能基に置換した誘導体も本発明に用いることが
できる。この誘導体としてトリフェノジオキサジン、ト
リフェノジチアジン、ヘキサセン−６，１５−キノンな
どを挙げることができる。The condensed polycyclic aromatic compound used in the present invention will be described. The condensed polycyclic aromatic compound used in the present invention is a compound having 4 to 13 condensed benzene rings or a mixture thereof. Examples of such compounds include naphthacene, pentacene, hexacene, heptacene, dibenzopentacene, tetrabenzopentacene, pyrene, dibenzopyrene, chrysene, perylene, coronene, terylene, ovalene, quaterrylene, and circumanthracene. Derivatives in which some of the carbon atoms of these compounds are replaced with atoms such as N, S, and O and functional groups such as carbonyl groups can also be used in the present invention. Examples of this derivative include triphenodioxazine, triphenodithiazine, and hexacene-6,15-quinone.
【０００６】つぎに本発明で使用する無機半導体につい
て説明する。本発明で用いる無機半導体としては、たと
えばシリコン、ガリウムひ素、ガリウムアルミニウムひ
素、ガリウム燐、インジウムひ素、インジウムアンチモ
ン、炭素系半導体、などを挙げることができる。また上
記縮合多環芳香族化合物は通常ｐ−型半導体であること
が多いためｎ−型半導体を用いた場合は、ｐ−ｎ接合形
成によりダイオードを作製することができる。Next, the inorganic semiconductor used in the present invention will be described. Examples of the inorganic semiconductor used in the present invention include silicon, gallium arsenide, gallium aluminum arsenide, gallium phosphide, indium arsenide, indium antimony, and carbon-based semiconductors. Further, since the condensed polycyclic aromatic compound is usually a p-type semiconductor in many cases, when an n-type semiconductor is used, a diode can be produced by forming a pn junction.
【０００７】前記の縮合多環芳香族化合物の薄膜と無機
半導体の接合方法についてその例を示す。この方法とし
ては、例えば前記の無機半導体を基板として縮合多環芳
香族化合物の薄膜を基板上に形成させる方法、任意の基
板上に縮合多環芳香族化合物薄膜を形成させた後、該薄
膜上に無機半導体の膜を形成させて、接合作製する方
法、任意の基板の面内の一部に縮合多環芳香族化合物薄
膜と無機半導体薄膜をそれぞれ形成させ面内で接合，形
成させる方法を用いることができる。縮合多環芳香族化
合物薄膜を形成方法として、たとえば真空蒸着法、ＭＢ
Ｅ法、ＣＶＤ法、スパッタリング法などの乾式薄膜形成
法によって作製することができる。この縮合多環芳香族
化合物薄膜は、基板温度が常温でも優れた平滑性、表面
性を有する。また、該化合物の溶液をもちいてスプレー
コート法、スピンコート法、ブレードコート法、デイッ
プコート法などで薄膜を形成させることができる。An example of the method for joining the thin film of the condensed polycyclic aromatic compound and the inorganic semiconductor will be described. As this method, for example, a method of forming a condensed polycyclic aromatic compound thin film on a substrate using the above-mentioned inorganic semiconductor as a substrate, or after forming a condensed polycyclic aromatic compound thin film on any substrate, A method of forming an inorganic semiconductor film on and forming a bond, and a method of forming a condensed polycyclic aromatic compound thin film and an inorganic semiconductor thin film on a part of the surface of an arbitrary substrate and bonding and forming them in the surface are used. be able to. As a method for forming a condensed polycyclic aromatic compound thin film, for example, a vacuum deposition method, MB
It can be manufactured by a dry thin film forming method such as E method, CVD method, and sputtering method. This condensed polycyclic aromatic compound thin film has excellent smoothness and surface properties even when the substrate temperature is room temperature. Further, a thin film can be formed by using a solution of the compound by a spray coating method, a spin coating method, a blade coating method, a dip coating method or the like.
【０００８】必要があればこのようにして作製した薄膜
に電気特性調整のためにヨウ素、臭素、ＳＯ3 、Ｓ
Ｏ2 、ＮＯ2 などのアクセプター分子を導入することも
できる。前記のようにして作製した縮合多環芳香族化合
物薄膜と無機半導体の接合を形成したのち、電気的特性
検出や他の素子との接合のための電極を設けることがで
きる。電極は無機半導体側と縮合多環芳香族化合物薄膜
側に設ける。この電極材料としては金属または半導体材
料を用いることができる。この電極の作製法としては、
真空蒸着法、ＭＢＥ法、スパッタ法、スプレーコート法
など前記の縮合多環芳香族化合物の薄膜形成法が利用で
きる。また、この電極作製は縮合多環芳香族化合物の薄
膜作製より前に行うことができる。If necessary, the thin film thus prepared may be adjusted to iodine, bromine, SO 3 or S for adjusting electric characteristics.
It is also possible to introduce an acceptor molecule such as O 2 or NO 2 . After forming the junction between the condensed polycyclic aromatic compound thin film produced as described above and the inorganic semiconductor, it is possible to provide an electrode for detecting an electrical characteristic or joining with another element. The electrodes are provided on the inorganic semiconductor side and the condensed polycyclic aromatic compound thin film side. A metal or a semiconductor material can be used as the electrode material. As a method of manufacturing this electrode,
The above-mentioned condensed polycyclic aromatic compound thin film forming method such as a vacuum evaporation method, an MBE method, a sputtering method and a spray coating method can be used. Further, this electrode preparation can be performed before the preparation of the condensed polycyclic aromatic compound thin film.
【０００９】このようにして作製したダイオードは、順
方向に低抵抗、逆方向に高抵抗の整流特性を有する。The diode thus manufactured has a low resistance in the forward direction and a high resistance in the reverse direction.
【００１０】[0010]
【実施例】次に、実施例によって本発明をさらに詳細に
説明する。EXAMPLES Next, the present invention will be described in more detail by way of examples.
【００１１】[0011]
【実施例１】ｎ−型シリコン基板（電導度１０Ｓ／ｃ
ｍ）上にペンタセン薄膜を２０００オングストロームの
膜厚で真空蒸着法で作製した。該薄膜上に金薄膜を３０
０オングストロームの膜厚で積層して電極とした。さら
にシリコン基板側に金薄膜を取り付けダイオードを作製
した。このようにして作製したダイオードの電気的特性
をＩ−Ｖ曲線測定より評価した（ヒューレートパッカー
ド製半導体パラメータアナライザー、４１４５Ｂを使用
した）。両電極間に印可電圧を−１０から１０Ｖで繰り
返し走査して電流を検出してＩ−Ｖ曲線を測定した。そ
の結果、明瞭な整流特性が認められ、順方向は低抵抗・
逆方向は高抵抗を示した。このＩ−Ｖ曲線から求めた１
Ｖにおける整流比は約５０であった。Example 1 n-type silicon substrate (conductivity 10 S / c
m), a pentacene thin film having a thickness of 2000 angstrom was formed on the m) by a vacuum deposition method. A gold thin film is deposited on the thin film 30
The electrodes were laminated to have a film thickness of 0 angstrom. Further, a gold thin film was attached to the silicon substrate side to produce a diode. The electrical characteristics of the diode thus produced were evaluated by IV curve measurement (using a semiconductor parameter analyzer 4145B manufactured by Hurate Packard). The IV voltage was measured by repeatedly scanning the applied voltage between both electrodes at -10 to 10 V to detect the current. As a result, clear rectification characteristics are recognized, and low resistance in the forward direction
The opposite direction showed high resistance. 1 obtained from this IV curve
The rectification ratio at V was about 50.
【００１２】[0012]
【実施例２】実施例１で作製したダイオードをヨウ素ガ
ス雰囲気中に置いてペンタセン薄膜にヨウ素をドーピン
グした。ドーピングを施したダイオードの電気的特性を
実施例１と同様にして測定した。このＩ−Ｖ曲線から明
瞭な整流性が認められ、その整流比は２００（印可電圧
１Ｖ）であった。Example 2 The diode prepared in Example 1 was placed in an iodine gas atmosphere to dope the pentacene thin film with iodine. The electrical characteristics of the doped diode were measured as in Example 1. A clear rectifying property was recognized from this IV curve, and its rectifying ratio was 200 (applied voltage: 1 V).
【００１３】[0013]
【実施例３】電導度２０Ｓ／ｃｍのｎ−型シリコン基板
上にヘキサセンを膜厚５００オングストロームで真空蒸
着法で作製した。さらにヘキサセン薄膜上に金薄膜（３
００オングストローム膜厚）で形成させて一方の電極と
した。またヘキサセンを形成させたシリコン基板面の裏
側に金薄膜（１０００オングストローム膜厚）を設け電
極とした。このようにして作製したダイオードは、実施
例１と同様にして両電極間のＩ−Ｖ曲線を測定した。そ
の結果、整流特性が認められ、印可電圧１Ｖ（＋１Ｖ、
−１Ｖ）における整流比は１０であった。Example 3 Hexacene was formed on an n-type silicon substrate having an electric conductivity of 20 S / cm in a film thickness of 500 angstrom by a vacuum vapor deposition method. Furthermore, a gold thin film (3
It was formed with a film thickness of 00 angstrom) to form one electrode. Further, a gold thin film (thickness of 1000 angstrom) was provided on the back side of the surface of the silicon substrate on which hexacene was formed to serve as an electrode. For the diode thus manufactured, the IV curve between both electrodes was measured in the same manner as in Example 1. As a result, rectification characteristics were recognized, and the applied voltage was 1V (+ 1V,
The rectification ratio at -1 V) was 10.
【００１４】[0014]
【実施例４】あらかじめ金薄膜（５００オングストロー
ムの膜厚）を部分的に形成させた石英ガラス基板上の一
部にペンタセン薄膜を真空蒸着法で膜厚２０００オング
ストロームで作製した。このペンタセン薄膜の端部と金
薄膜がない石英基板にｎ−型アモルファスシリコン薄膜
を作製し基板面内で接合を形成させた。このようにして
ダイオードを作製した。別の石英基板に形成したアモル
ファスシリコン薄膜の電導度は１Ｓ／ｃｍであった。さ
らにシリコン薄膜の上に金薄膜（膜厚５００オングスト
ローム）を電極として設けた。ペンタセン薄膜に接続し
た電極とシリコン薄膜上に設けた電極間で電気的特性を
調べた。その結果、Ｉ−Ｖ曲線が整流性を示し、１Ｖ
（＋１Ｖ、−１Ｖ）における整流比は約１０であった。Example 4 A pentacene thin film was formed in a thickness of 2000 angstrom on a part of a quartz glass substrate on which a gold thin film (film thickness of 500 angstrom) was partially formed in advance by a vacuum deposition method. An n-type amorphous silicon thin film was formed on the end of this pentacene thin film and a quartz substrate without a gold thin film, and a bond was formed in the plane of the substrate. Thus, the diode was produced. The conductivity of the amorphous silicon thin film formed on another quartz substrate was 1 S / cm. Further, a gold thin film (film thickness 500 angstrom) was provided on the silicon thin film as an electrode. The electrical characteristics were investigated between the electrode connected to the pentacene thin film and the electrode provided on the silicon thin film. As a result, the IV curve shows a rectifying property and is 1V.
The rectification ratio at (+ 1V, -1V) was about 10.
【００１５】[0015]
【発明の効果】本発明のダイオードは通常の無機材料、
有機材料の半導体素子と異なり作製が容易でありかつ優
れたダイオード特性を示す。ダイオードの製造において
基板温度が常温で行えるため種々の基板上にダイオード
が形成可能である。また、膜質として表面性・平滑性な
どに優れるため工業上有用である。The diode of the present invention is a normal inorganic material,
Unlike a semiconductor element made of an organic material, it is easy to manufacture and exhibits excellent diode characteristics. Since the substrate temperature can be set to room temperature in manufacturing the diode, the diode can be formed on various substrates. Further, it is industrially useful because it has excellent surface properties and smoothness as a film quality.
Claims (1)
下である縮合多環芳香族化合物薄膜と無機半導体とを接
合することを特徴とする有機薄膜ダイオード1. An organic thin-film diode, characterized in that a condensed polycyclic aromatic compound thin film having a number of condensed benzene rings of 4 or more and 13 or less is joined to an inorganic semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3215746A JPH0555607A (en) | 1991-08-28 | 1991-08-28 | Organic film diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3215746A JPH0555607A (en) | 1991-08-28 | 1991-08-28 | Organic film diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0555607A true JPH0555607A (en) | 1993-03-05 |
Family
ID=16677528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3215746A Withdrawn JPH0555607A (en) | 1991-08-28 | 1991-08-28 | Organic film diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0555607A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150156A (en) * | 2003-11-11 | 2005-06-09 | Toshiba Corp | Magnetic storage |
-
1991
- 1991-08-28 JP JP3215746A patent/JPH0555607A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005150156A (en) * | 2003-11-11 | 2005-06-09 | Toshiba Corp | Magnetic storage |
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Legal Events
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|---|---|---|---|
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Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981112 |