JPH0555372A - Manufacture of oxide superconductor chip - Google Patents
Manufacture of oxide superconductor chipInfo
- Publication number
- JPH0555372A JPH0555372A JP3237408A JP23740891A JPH0555372A JP H0555372 A JPH0555372 A JP H0555372A JP 3237408 A JP3237408 A JP 3237408A JP 23740891 A JP23740891 A JP 23740891A JP H0555372 A JPH0555372 A JP H0555372A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide superconducting
- superconducting film
- oxide
- circuit pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title abstract description 20
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000059 patterning Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 27
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 238000005520 cutting process Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004247 CaCu Inorganic materials 0.000 description 1
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 description 1
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Dicing (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化物超電導膜の水分
劣化を防止した、カット精度に優れる酸化物超電導体チ
ップの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an oxide superconducting chip which prevents deterioration of water content in an oxide superconducting film and is excellent in cutting accuracy.
【０００２】[0002]
【従来の技術】従来、複数の素子単位を構成する回路パ
ターンを形成した半導体ウエハを、ダイヤモンドソー等
からなるカッターにて素子単位に分断する半導体チップ
の製造方法が知られていた。かかる方法は、手作業等に
よるカッティングでは形成が困難な小さいチップでも容
易に、かつ効率的に形成できる利点があるが、その分断
時に水を供給してカッターの冷却や切削屑の除去等を行
う必要がある。2. Description of the Related Art Conventionally, there has been known a method of manufacturing a semiconductor chip in which a semiconductor wafer on which a circuit pattern forming a plurality of element units is formed is divided into element units by a cutter such as a diamond saw. This method has the advantage that even small chips, which are difficult to form by cutting by hand or the like, can be easily and efficiently formed, but at the time of cutting, water is supplied to cool the cutter and remove cutting chips. There is a need.
【０００３】しかしながら、前記の方法を酸化物超電導
体チップの製造に適用した場合、分断時に供給する水に
より酸化物超電導膜が劣化する問題点があった。However, when the above method is applied to the production of oxide superconductor chips, there is a problem that the oxide superconducting film is deteriorated by the water supplied at the time of cutting.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、酸化物超電
導膜の水分劣化を防止した、カット精度に優れる酸化物
超電導体チップの製造方法の開発を課題とする。SUMMARY OF THE INVENTION An object of the present invention is to develop a method for producing an oxide superconducting chip which is excellent in cutting accuracy and which prevents moisture deterioration of the oxide superconducting film.
【０００５】[0005]
【課題を解決するための手段】本発明は、基板に分断用
の切れ目を入れる工程、切れ目を入れた基板の他面に酸
化物超電導膜を設ける工程、基板上に設けた酸化物超電
導膜をパターンニングして複数の素子単位を構成する回
路パターンを形成する工程、回路パターンを形成した基
板をその分断用の切れ目を介しブレーキングして素子単
位に分断する工程からなることを特徴とする酸化物超電
導体チップの製造方法を提供するものである。According to the present invention, there is provided a step of making a cut for dividing a substrate, a step of providing an oxide superconducting film on the other surface of the substrate having the cut, and an oxide superconducting film provided on the substrate. Oxidation, which comprises a step of patterning to form a circuit pattern that constitutes a plurality of element units, and a step of breaking the substrate on which the circuit pattern is formed into element units by breaking it through a cut for cutting Provided is a method for manufacturing a superconductor chip.
【０００６】[0006]
【作用】基板に予め分断用の切れ目を入れ、それに酸化
物超電導膜を設けて回路パターン化し、そののち素子単
位に分断する上記の方法により、酸化物超電導膜の付設
工程以後、酸化物超電導体チップを得るまでに水分が関
与することを回避でき、酸化物超電導膜が水分で劣化す
ることを防止できる。The oxide superconducting film is attached after the step of attaching the oxide superconducting film by the above-mentioned method in which the substrate is preliminarily provided with a cutting cut, an oxide superconducting film is provided on the substrate to form a circuit pattern, and then the device is divided into units. It is possible to avoid the involvement of water until the chip is obtained, and it is possible to prevent the oxide superconducting film from being deteriorated by water.
【０００７】[0007]
【実施例】本発明においては、図１に例示の如く、まず
基板１にダイヤモンドソーの如き適宜なカッターを用い
て、分断用の切れ目２を入れる。その際、冷却水や洗浄
水等を供給することができる。設ける切れ目は、目的と
する素子単位、すなわち酸化物超電導体チップの寸法に
応じたものとされる。切れ目の深さは、ブレーキング性
等に応じて適宜に決定されるが、一般には基板厚さの５
０〜９５％とされる。基板としては、ＭgＯやＳrＴiＯ3
等のセラミックなどからなる適宜なものを用いてよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, as shown in FIG. 1, first, a cut 2 for cutting is made on a substrate 1 by using an appropriate cutter such as a diamond saw. At that time, cooling water, cleaning water, or the like can be supplied. The discontinuity to be provided depends on the intended element unit, that is, the size of the oxide superconductor chip. The depth of the cut is appropriately determined depending on the braking property and the like, but is generally 5 times the substrate thickness.
It is set to 0 to 95%. As a substrate, MgO or SrTiO 3
An appropriate material such as ceramics may be used.
【０００８】切れ目を入れた基板には、その他面に図２
に例示の如く、酸化物超電導膜３が設けられる。基板上
への酸化物超電導膜の付設は、例えばスパッタリング
法、レーザースパッタリング法、イオンビームスパッタ
リング法、ＭＢＥ法、ＭＯＣＶＤ法、ゾル・ゲル法、噴
霧熱分解法などの任意な方式で行ってよい。設ける酸化
物超電導膜の厚さは任意であるが、通例５００μm以下
である。On the other side of the notched substrate, as shown in FIG.
The oxide superconducting film 3 is provided as illustrated in FIG. The oxide superconducting film may be attached on the substrate by any method such as a sputtering method, a laser sputtering method, an ion beam sputtering method, an MBE method, a MOCVD method, a sol-gel method, and a spray pyrolysis method. The thickness of the oxide superconducting film provided is arbitrary, but is usually 500 μm or less.
【０００９】酸化物超電導膜の種類も任意である。その
例としては、ＹＢa2Ｃu3ＯyやＹＢa2Ｃu4Ｏyの如きＹ系
酸化物超電導体、Ｂa1-xＫxＢiＯ3の如きＢa系酸化物超
電導体、Ｎd2-xＣexＣuＯyの如きＮd系酸化物超電導
体、Ｂi2Ｓr2ＣaＣu2Ｏy、Ｂi2-xＰbxＳr2Ｃa2Ｃu3Ｏy
の如きＢi系酸化物超電導体、その他Ｌa系酸化物超電導
体、Ｔl系酸化物超電導体、Ｐb系酸化物超電導体などか
らなるものがあげられる。The type of oxide superconducting film is also arbitrary. Examples thereof include Y-based oxide superconductors such as YBa 2 Cu 3 O y and YBa 2 Cu 4 O y , Ba - based oxide superconductors such as Ba 1-x K x BiO 3 , Nd 2-x Ce x. Nd-based oxide superconductors such as CuO y , Bi 2 Sr 2 CaCu 2 O y , Bi 2-x Pb x Sr 2 Ca 2 Cu 3 O y
Examples thereof include Bi-based oxide superconductors, La-based oxide superconductors, Tl-based oxide superconductors, Pb-based oxide superconductors, and the like.
【００１０】また、前記のＹ等の成分を他の希土類元素
で置換したものや、Ｂa等の成分を他のアルカリ土類金
属で置換したもの、あるいはＯ成分をＦなどで置換した
ものなどもあげられる。さらに、ピンニングセンターを
含有させたものなどもあげられる。Further, the above-mentioned components such as Y are substituted with other rare earth elements, the components such as Ba are substituted with other alkaline earth metals, and the O components are substituted with F and the like. can give. Furthermore, the thing containing the pinning center etc. is mentioned.
【００１１】基板上に設けられた酸化物超電導膜は、次
に図３に例示の如く、複数の素子単位３１を構成する回
路パターンにパターンニングされる。パターンニングは
例えば、フォトリソグラフィー方式などにより酸化物超
電導膜の上にレジスト等からなる被覆パターンを設けた
のち、酸化物超電導膜の露出部分をエッチング処理する
方法などにより行うことができる。Next, the oxide superconducting film provided on the substrate is patterned into a circuit pattern forming a plurality of element units 31, as illustrated in FIG. The patterning can be performed, for example, by providing a coating pattern made of a resist or the like on the oxide superconducting film by a photolithography method and then etching the exposed portion of the oxide superconducting film.
【００１２】酸化物超電導膜のエッチング処理は例え
ば、塩素ガス、アルゴンガス、水素ガス等の適宜なエッ
チャントを用いたリアクティブイオンエッチング方式、
イオンビームエッチング方式、レーザービームエッチン
グ方式、ＥＣＲプラズマエッチング方式などにより行う
ことができる。The oxide superconducting film is etched by, for example, a reactive ion etching method using an appropriate etchant such as chlorine gas, argon gas, hydrogen gas,
It can be performed by an ion beam etching method, a laser beam etching method, an ECR plasma etching method, or the like.
【００１３】形成する酸化物超電導膜の回路パターン
は、ダイオードやトランジスタ、あるいはセンサーなど
の、目的とする超電導応用デバイスにより決定される。
本発明においては、かかる超電導応用デバイスとしての
素子単位が基板上に複数形成された回路パターンとされ
る。The circuit pattern of the oxide superconducting film to be formed is determined by the intended superconducting application device such as a diode, a transistor, or a sensor.
In the present invention, a circuit pattern in which a plurality of element units as such a superconducting application device are formed on a substrate.
【００１４】なおエッチング処理後、酸化物超電導膜の
回路パターン上に残存するレジスト層等は、例えば酸素
ガスを用いたリアクティブイオンエッチング方式などの
Ｏ2アッシング方式などにより除去することができる。After the etching treatment, the resist layer or the like remaining on the circuit pattern of the oxide superconducting film can be removed by an O 2 ashing method such as a reactive ion etching method using oxygen gas.
【００１５】回路パターンを形成した基板は、次に図４
に例示の如く、その分断用の切れ目２を利用してブレー
キングし、素子単位４に分断される。ブレーキングは、
例えば押圧ローラ等を押し付ける方式など、適宜に行っ
てよい。The substrate on which the circuit pattern has been formed is next shown in FIG.
As illustrated in FIG. 2, the breaking 2 for breaking is used to perform braking, and the element unit 4 is divided. Braking is
For example, a method of pressing a pressing roller or the like may be appropriately performed.
【００１６】ちなみに、厚さ１mmのＭgＯ基板にダイヤ
モンドソーにて深さ０.８mmの切れ目を、水冷下に縦横
５mmの間隔で入れたのち、その基板の裏面上にゾル・ゲ
ル法で厚さ約４μmのＹＢa2Ｃu3Ｏy系酸化物超電導膜を
形成した、By the way, 0.8 mm deep cuts were made in a 1 mm thick MgO substrate with a diamond saw at intervals of 5 mm in length and width under water cooling, and the thickness was then applied to the back surface of the substrate by the sol-gel method. A YBa 2 Cu 3 O y based oxide superconducting film of about 4 μm was formed,
【００１７】前記ＹＢa2Ｃu3Ｏy系酸化物超電導膜の形
成は、８０℃に加温したプロピオン酸１０００mlに、酢
酸イットリウム０.０７モル、酢酸バリウム０.１４モ
ル、酢酸銅０.２１モルを溶解冷却させて得た溶液を、
スピンコート方式により基板上に展開して厚さ約５μm
の展開層を形成し、その展開層を自然乾燥１時間後、
０.１Torr、１５０℃で１時間乾燥させたのち４８０℃
で１時間熱分解処理し（大気中）、ついで先の熱分解層
の上に新たな展開層を形成して熱分解する操作を９回繰
り返して合計１０層の熱分解層からなる重畳層を形成し
たのち、それを酸素雰囲気下、９００℃で２時間焼結処
理し、ついで４００℃で５時間酸素アニールすることに
より行った。The YBa 2 Cu 3 O y type oxide superconducting film is formed by adding 1000 ml of propionic acid heated at 80 ° C. to 0.07 mol of yttrium acetate, 0.14 mol of barium acetate and 0.21 mol of copper acetate. The solution obtained by dissolving and cooling
Approximately 5 μm thick when developed on a substrate by spin coating
Of the developed layer, and after the natural drying for 1 hour,
After drying at 0.1 Torr and 150 ℃ for 1 hour, 480 ℃
Pyrolysis treatment for 1 hour (in air), then forming a new development layer on the previous pyrolysis layer and pyrolyzing it 9 times to form a superposed layer consisting of 10 pyrolysis layers in total. After the formation, it was performed by sintering it at 900 ° C. for 2 hours in an oxygen atmosphere, and then performing oxygen annealing at 400 ° C. for 5 hours.
【００１８】次に、前記ＹＢa2Ｃu3Ｏy系酸化物超電導
膜の上にフォトリソグラフィー方式でレジストパターン
を形成後、平行平板型リアクティブイオンエッチング装
置を用いて、５／１０6Ｔｏｒｒ以下の真空下に塩素ガ
スと水素ガスによりエッチング処理して酸化物超電導膜
の回路パターンを形成し、次いで酸素ガスによりその回
路パターン上のレジストを除去した。Next, after forming a resist pattern on the YBa 2 Cu 3 O y type oxide superconducting film by a photolithography method, a parallel plate type reactive ion etching apparatus is used to obtain a resist pattern of 5/10 6 Torr or less. A circuit pattern of the oxide superconducting film was formed by etching with chlorine gas and hydrogen gas under vacuum, and then the resist on the circuit pattern was removed with oxygen gas.
【００１９】次に前記で得た、複数の素子単位からなる
回路パターンを有するＭgＯ基板を押圧ローラを押し付
けるブレーキング方式により素子単位に分断して５mm角
の酸化物超電導体チップを得た。Next, the MgO substrate having a circuit pattern consisting of a plurality of element units obtained above was divided into element units by a breaking method in which a pressing roller was pressed to obtain a 5 mm square oxide superconductor chip.
【００２０】前記において、得られた酸化物超電導体チ
ップにおける酸化物超電導膜（デバイス回路パターン）
の臨界温度は８３Ｋで、臨界電流密度は７４００Ａ／cm
2（７７.３Ｋ）であった。なお、パターンニング前にお
ける酸化物超電導膜の臨界温度は８３Ｋで、臨界電流密
度は７４００Ａ／cm2（７７.３Ｋ）であった。In the above, the oxide superconducting film (device circuit pattern) in the obtained oxide superconducting chip
Has a critical temperature of 83K and a critical current density of 7400A / cm
2 (77.3K). The critical temperature of the oxide superconducting film before patterning was 83K, and the critical current density was 7400A / cm 2 (77.3K).
【００２１】一方、比較のために、基板のダイシング工
程を回路パターン形成後としたほかは、すなわち酸化物
超電導膜の回路パターン形成後に基板を水冷下に切れ目
を入れて分断したほかは前記の実施例に準じて酸化物超
電導体チップを得た。得られた酸化物超電導体チップに
おける酸化物超電導膜の臨界温度は６０Ｋであった。On the other hand, for comparison, except that the dicing step of the substrate was performed after the circuit pattern was formed, that is, the substrate was cut under water cooling to be divided after the circuit pattern of the oxide superconducting film was formed, and the above-described execution was performed. An oxide superconductor chip was obtained according to the example. The critical temperature of the oxide superconducting film in the obtained oxide superconductor chip was 60K.
【００２２】なお前記において、臨界温度は０.１Ａ／c
m2の電流密度下、液体窒素で冷却しながら４端子法で電
気抵抗の温度変化を測定し、電圧端子間の発生電圧が０
となったときの温度である。In the above, the critical temperature is 0.1 A / c.
The temperature change of the electrical resistance was measured by the 4-terminal method while cooling with liquid nitrogen under a current density of m 2 , and the generated voltage between the voltage terminals was 0.
Is the temperature at which
【００２３】また臨界電流密度は、パワーリードと共に
液体窒素で冷却しながら徐々に電流値を上げて、４端子
法により電圧端子間の電圧の印加電流による変化を測定
し、Ｘ−Ｙレコーダにおいて１μv／cmの電圧が出現し
たときの電流値を超電導体の断面積で除した値である。For the critical current density, the current value is gradually increased while cooling with liquid nitrogen along with the power lead, and the change in the voltage between the voltage terminals due to the applied current is measured by the 4-terminal method. It is the value obtained by dividing the current value when a voltage of / cm appears by the cross-sectional area of the superconductor.
【００２４】本発明による酸化物超電導体チップの製造
方法は、例えばダイオードやトランジスタ、あるいはセ
ンサーなどの超電導を応用したデバイス、特に小型のデ
バイスを量産する場合などに好ましく用いることができ
る。The method for producing an oxide superconductor chip according to the present invention can be preferably used, for example, when mass-producing a device to which superconductivity is applied, such as a diode, a transistor, or a sensor, particularly a small device.
【００２５】[0025]
【発明の効果】本発明によれば酸化物超電導膜が水分等
で劣化することを防止でき、超電導特性の維持率に優れ
る小サイズの酸化物超電導体チップを効率的に製造する
ことができる。According to the present invention, it is possible to prevent the oxide superconducting film from deteriorating due to moisture or the like, and it is possible to efficiently manufacture a small-sized oxide superconductor chip having an excellent maintenance rate of superconducting properties.
【図１】分断用の切れ目を入れる工程の説明図。FIG. 1 is an explanatory diagram of a process of making a cut for division.
【図２】酸化物超電導膜付設工程の説明図。FIG. 2 is an explanatory view of a step of attaching an oxide superconducting film.
【図３】酸化物超電導膜のパターンニング工程の説明
図。FIG. 3 is an explanatory view of a patterning process of an oxide superconducting film.
【図４】分断工程の説明図。FIG. 4 is an explanatory diagram of a dividing step.
１：基板 ２：切れ目 ３：酸化物超電導膜 ３１：素子単位（デバイス回路パターン） ４：酸化物超電導体チップ 1: Substrate 2: Cut 3: Oxide superconducting film 31: Element unit (device circuit pattern) 4: Oxide superconductor chip
Claims (1)
れ目を入れた基板の他面に酸化物超電導膜を設ける工
程、基板上に設けた酸化物超電導膜をパターンニングし
て複数の素子単位を構成する回路パターンを形成する工
程、回路パターンを形成した基板をその分断用の切れ目
を介しブレーキングして素子単位に分断する工程からな
ることを特徴とする酸化物超電導体チップの製造方法。1. A step of forming a cut for dividing a substrate, a step of providing an oxide superconducting film on the other surface of the cut substrate, and a patterning of the oxide superconducting film provided on the substrate to form a plurality of device units. And a step of breaking the substrate on which the circuit pattern is formed through the dividing slits to divide the substrate into element units.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3237408A JPH0555372A (en) | 1991-08-23 | 1991-08-23 | Manufacture of oxide superconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3237408A JPH0555372A (en) | 1991-08-23 | 1991-08-23 | Manufacture of oxide superconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0555372A true JPH0555372A (en) | 1993-03-05 |
Family
ID=17014941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3237408A Pending JPH0555372A (en) | 1991-08-23 | 1991-08-23 | Manufacture of oxide superconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0555372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013018870A1 (en) * | 2011-08-02 | 2013-02-07 | 古河電気工業株式会社 | Superconductor manufacturing method, superconductor, and superconductor substrate |
-
1991
- 1991-08-23 JP JP3237408A patent/JPH0555372A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013018870A1 (en) * | 2011-08-02 | 2013-02-07 | 古河電気工業株式会社 | Superconductor manufacturing method, superconductor, and superconductor substrate |
| JPWO2013018870A1 (en) * | 2011-08-02 | 2015-03-05 | 古河電気工業株式会社 | Superconducting conductor manufacturing method, superconducting conductor and superconducting conductor substrate |
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