JPH0555296A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JPH0555296A
JPH0555296A JP3238628A JP23862891A JPH0555296A JP H0555296 A JPH0555296 A JP H0555296A JP 3238628 A JP3238628 A JP 3238628A JP 23862891 A JP23862891 A JP 23862891A JP H0555296 A JPH0555296 A JP H0555296A
Authority
JP
Japan
Prior art keywords
alloy
film
electrode
wire
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3238628A
Other languages
Japanese (ja)
Inventor
Hiroshi Ueno
博 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP3238628A priority Critical patent/JPH0555296A/en
Publication of JPH0555296A publication Critical patent/JPH0555296A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48507—Material at the bonding interface comprising an intermetallic compound
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Abstract

PURPOSE:To provide a semiconductor device which can suppress the deterioration with time by the heat generated at the junction between an Au wire and an Al or Al alloy electrode without modifying the conventional wire bonding technology suitable for mass production. CONSTITUTION:A thin metallic film 9 consisting of Al or Al alloy 0.25mum thick or less is made on the SiO2 oxide film 3 on an Si substrate 2, and the part from which a protective film 5 is removed is used as a thin electrode 7' of Al or Al alloy, and other part is used as a wiring part 8, and an Au wire 6 is bonded to the electrode 7' by wire bonding. Accordingly, by thinning the electrode 7', the quantity of alloy produced by Au and Al by the thermal history decreases, and the kinds of the alloy made also decreases. Furthermore, since the quantity and the kinds of alloy are few, the quantity of voids can be made small. Therefore, the increase of the junction resistance and the drop of the junction strength can be prevented. Especially, in the case where the thickness is 0.25mum or less, the effect appears remarkably.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ＩＣ、ＬＳＩ等の半導
体装置に関するもので、特に基台上に形成された金属膜
の所定部分を電極としてワイヤを接続すると共に金属膜
の他の部分を配線部とすることで回路を形成することを
可能に構成した半導体装置の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device such as an IC or an LSI, and particularly to connecting a wire with a predetermined portion of a metal film formed on a base as an electrode and connecting the other portion of the metal film. The present invention relates to an improvement of a semiconductor device configured to form a circuit by using a wiring portion.

【０００２】[0002]

【従来の技術】図１１に、従来の半導体装置を示す。同
図において、１は半導体装置を示し、２はＳｉ基板、３
はＳｉＯ2酸化膜、４は金属膜、５は表面保護膜、６は
Ａｕワイヤ、７は金属膜の電極部、８は金属膜の配線部
である。即ち、酸化膜３上に、金属膜４としてＡｌ、Ａ
ｕ、Ｃｕ等の金属もしくはそれらを主材とする合金が
０．８μｍ〜３μｍ程度の厚さで形成され、その一部が
表面保護膜５を取り除かれ、外部と電気的に接続する電
極部７となる。その電極部７にワイヤボンディングによ
り、Ａｕ、Ａｌ、Ｃｕ等のワイヤ６が接合される。2. Description of the Related Art FIG. 11 shows a conventional semiconductor device. In the figure, 1 indicates a semiconductor device, 2 indicates a Si substrate, 3
Is a SiO 2 oxide film, 4 is a metal film, 5 is a surface protection film, 6 is an Au wire, 7 is an electrode part of a metal film, and 8 is a wiring part of a metal film. That is, Al, A as the metal film 4 is formed on the oxide film 3.
A metal such as u or Cu or an alloy containing them as a main material is formed in a thickness of about 0.8 μm to 3 μm, and a part of the surface protection film 5 is removed to electrically connect the electrode portion 7 to the outside. Becomes The wire 6 made of Au, Al, Cu or the like is joined to the electrode portion 7 by wire bonding.

【０００３】[0003]

【発明が解決しようとする課題】上記電極とワイヤの組
み合わせのうち、ＡｌもしくはＡｌ合金とＡｕワイヤの
組み合わせは、安定したワイヤボンディングができ、量
産性に優れている。しかし、ＡｌもしくはＡｌ合金電極
とＡｕワイヤの組み合わせは、５種類の金属間化合物が
存在し、熱によって相互拡散が比較的早く進み、脆い金
属間化合物や金属間化合物の形成にともなうボイドなど
により、接合強度の低下、接合抵抗の増加等の接合部劣
化を引き起こす。ひどいときには、接合抵抗は初期値の
数十倍となり、強度の低下により接合部のオープン不良
となってしまう。Among the above combinations of electrodes and wires, the combination of Al or Al alloy and Au wire enables stable wire bonding and is excellent in mass productivity. However, in the combination of Al or Al alloy electrode and Au wire, there are five kinds of intermetallic compounds, mutual diffusion proceeds relatively quickly by heat, and brittle intermetallic compounds and voids accompanying the formation of intermetallic compounds cause This causes deterioration of the joint such as a decrease in joint strength and an increase in joint resistance. In severe cases, the junction resistance becomes several tens of times the initial value, and the strength of the joint decreases, resulting in a defective open joint.

【０００４】[0004]

【発明の目的】本発明は、量産性に優れているＡｌ電極
とＡｕワイヤの組み合わせを変えることなく、熱による
経時変化をほとんど問題のないレベルまで少なくするこ
とができる半導体装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device capable of reducing the aging due to heat to a level at which there is almost no problem, without changing the combination of the Al electrode and the Au wire, which is excellent in mass productivity. To aim.

【０００５】[0005]

【課題を解決するための手段】本願の第１発明は、基台
上に形成された金属膜の所定部分を電極部としてワイヤ
を接続すると共に、前記金属膜の他の部分は配線部とす
ることで回路を形成することが可能なように構成された
半導体装置において、前記金属膜中、少なくとも前記電
極部に相当する部分の厚さが０．２５μｍ以下に構成さ
れていることを要旨としている。本願の第２発明は、基
台上に直接あるいは間接的に形成され、ワイヤが接続さ
れた所定厚さの金属膜で構成された電極部であって、前
記電極部厚さが０．２５μｍ以下である電極部と、前記
電極部と電気的に接続されたバリアメタル層と、前記バ
リアメタル層と電気的に接続された配線部とから成るこ
とを要旨としている。According to a first aspect of the present invention, a wire is connected while a predetermined portion of a metal film formed on a base is used as an electrode portion, and the other portion of the metal film is used as a wiring portion. Thus, in a semiconductor device configured to be able to form a circuit, at least a portion of the metal film corresponding to the electrode portion has a thickness of 0.25 μm or less. .. A second invention of the present application is an electrode portion which is directly or indirectly formed on a base and is made of a metal film having a predetermined thickness and to which a wire is connected, wherein the electrode portion has a thickness of 0.25 μm or less. The gist of the present invention is that it comprises an electrode part which is, a barrier metal layer electrically connected to the electrode part, and a wiring part electrically connected to the barrier metal layer.

【０００６】[0006]

【作用】前記電極部の厚さを薄くすることで、熱履歴に
対してワイヤと電極により形成される合金の量が少なく
なり、形成される合金の種類も少なくなる。さらに合金
の量と種類が少ないために、ボイドの量も少なくなる。
したがって接合抵抗の増加、接合強度の低下を防ぐこと
が可能となる。特に電極部の膜厚が０．２５μｍ以下の
場合、その効果は顕著にあらわれる。By reducing the thickness of the electrode portion, the amount of alloy formed by the wire and the electrode with respect to heat history is reduced, and the type of alloy formed is also reduced. Furthermore, the amount of voids is reduced due to the small amount and type of alloy.
Therefore, it becomes possible to prevent an increase in bonding resistance and a decrease in bonding strength. In particular, when the film thickness of the electrode portion is 0.25 μm or less, the effect is remarkable.

【０００７】[0007]

【実施例】図１に本発明の一実施例を示す。同図におい
て、９はＳｉ基板２およびＳｉＯ2酸化膜３より成る基
台上に形成された薄いＡｌもしくはＡｌ合金膜で、０．
５μｍ以下の膜厚で形成されている。７’は薄い金属膜
の電極部、８’は配線部である。FIG. 1 shows an embodiment of the present invention. In the figure, reference numeral 9 is a thin Al or Al alloy film formed on a base composed of the Si substrate 2 and the SiO 2 oxide film 3, and 0.
It is formed with a film thickness of 5 μm or less. Reference numeral 7'denotes a thin metal film electrode portion, and 8'denotes a wiring portion.

【０００８】ここで本発明の有効性を証明するために、
Ａｌ電極の膜厚を、０．２，０．５，１．０，２．０，
３．０μｍと変えた試料に対して、Ａｕワイヤボンディ
ングを行なった場合の実験結果を図２、図３および図４
のグラフに示す。Here, in order to prove the effectiveness of the present invention,
The film thickness of the Al electrode is 0.2, 0.5, 1.0, 2.0,
2, 3 and 4 show the experimental results when Au wire bonding was performed on the sample whose thickness was changed to 3.0 μm.
Is shown in the graph.

【０００９】図２は、２００℃−Ｎ2中で１０００時間
の熱処理をしたときのＡｌ電極とＡｕワイヤの接合抵抗
を四探針法で測定し、その変化を示したものである。Ａ
ｌ膜厚が１．０，２．０，３．０μｍのものは抵抗の変
化が大きく、Ａｌ電極が２．０，３．０μｍ以上になる
と接合がオープン状態になっている。それに比べてＡｌ
電極が０．２，０．５μｍの場合、抵抗値の変化が非常
に少なく、問題のないレベルであることがわかる。FIG. 2 shows changes in the junction resistance between the Al electrode and the Au wire when heat-treated at 200 ° C.-N 2 for 1000 hours by the four-point probe method and shows the change. A
When the film thickness is 1.0, 2.0 or 3.0 μm, the resistance changes greatly, and when the Al electrode is 2.0, 3.0 μm or more, the junction is in an open state. Al compared to that
It can be seen that when the electrodes are 0.2 and 0.5 μm, the change in resistance value is very small and there is no problem.

【００１０】図３及び図４は、２００℃−Ｎ2と外気中
で１０００時間の熱処理をしたときのＡｕボールの接合
強度を剪断試験で測定したものである。Ａｌ膜厚が２．
０，３．０μｍのものは剪断強度が２０ｇ以下になって
しまうのに対し、Ａｌ膜厚が０．２，０．５μｍのもの
は初期の剪断強度と同じレベルを保っている。Ａｌ電極
が１．０μｍのものは剪断強度は比較的強いが、ばらつ
きが大きく、なかには３０ｇ以下の剪断強度を示すサン
プルもあった。よって一般にいわれている実用上十分な
剪断強度は約４０ｇであるので、Ａｌ電極が１．０μｍ
のものは剪断強度に問題がある。FIGS. 3 and 4 show the joint strength of Au balls measured by a shear test when heat-treated at 200 ° C.-N 2 in the open air for 1000 hours. Al film thickness is 2.
The shear strength of 0,3.0 μm is 20 g or less, whereas the Al thickness of 0.2,0.5 μm maintains the same level as the initial shear strength. Although the shear strength of the Al electrode of 1.0 μm was relatively strong, the dispersion was large, and some samples showed shear strength of 30 g or less. Therefore, since the shear strength that is generally said to be practically sufficient is about 40 g, the Al electrode is 1.0 μm.
There is a problem in shear strength.

【００１１】これらのことは、次のように説明できる。
電極の厚さを薄くすることで、熱履歴に対してＡｕとＡ
ｌにより形成される合金の量が少なくなり、形成される
合金の種類も少なくなる。即ち、本発明のような薄い電
極膜の場合は、一気に拡散が進んで合金化してしまい、
ボイドもできず、合金の種類も少なくなると考えられ
る。これまでの分析結果から、Ａｌ膜が３.０μｍの場
合、４種類｛ＡｕＡｌ2，Ａｕ5Ａｌ2，Ａｕ4Ａｌ、Ａｕ
5Ａｌ（これはまだ確定されてない）｝の金属間化合物
とボイドの分析結果を、Ａｌ膜が０．２μｍの場合は１
種類（Ａｕ5Ａｌ）の金属間化合物の分析結果が得られ
ている。These matters can be explained as follows.
By reducing the thickness of the electrode, Au and A
The amount of alloy formed by 1 is reduced, and the type of alloy formed is also reduced. That is, in the case of a thin electrode film as in the present invention, diffusion progresses at once and alloys,
It is considered that voids cannot be formed and the types of alloys are reduced. From the analysis results so far, when the Al film is 3.0 μm, four kinds {AuAl 2 , Au 5 Al 2 , Au 4 Al, Au are used.
5 Al (this has not been determined yet)} analysis results of intermetallic compounds and voids, 1 for Al film of 0.2 μm
The analysis results of a type (Au 5 Al) intermetallic compound have been obtained.

【００１２】さらに、合金の量と種類が少ないために、
ボイドの量も非常に少なくすることができる。よって、
接合抵抗の増加、接合強度の低下を防ぐことができる。
特に、膜厚が０．２５μｍ以下の場合、その効果は顕著
にあらわれる。Furthermore, because of the small amount and type of alloy,
The amount of voids can also be very small. Therefore,
It is possible to prevent an increase in bonding resistance and a decrease in bonding strength.
Especially, when the film thickness is 0.25 μm or less, the effect is remarkable.

【００１３】図１の例では、配線と電極が同じ膜厚とな
っているが、膜厚が薄すぎると配線抵抗が大きくなりす
ぎて、１）電気抵抗が増大すること、２）流せる電流が
減少する、３）配線部分の機械強度が減少して切れ易く
なる、４）０．５μｍ以下のＡｌは熱処理で島状構造に
なってしまう、という支障がでてくる。しかしながら、
本発明においては、ＡｌもしくはＡｌ合金の膜厚を薄く
するところは、電極部分だけでよい。その実施例を図
５、図６および図７に示す。In the example of FIG. 1, the wiring and the electrodes have the same film thickness, but if the film thickness is too thin, the wiring resistance becomes too large, and 1) the electrical resistance increases, and 2) the current that can be passed is There is a problem that 3) the mechanical strength of the wiring part is reduced and it becomes easy to break, and 4) Al of 0.5 μm or less becomes an island structure by heat treatment. However,
In the present invention, the place where the film thickness of Al or Al alloy is made thin is only the electrode part. An example thereof is shown in FIGS. 5, 6 and 7.

【００１４】図５では、電極部分だけを膜厚を薄くした
構造である。即ち、７’は薄いＡｌもしくはＡｌ合金膜
の電極部、１０は厚くした配線部を示す。製造方法とし
ては、配線部分と電極部分と分けてＡｌもくしはＡｌ合
金膜を所望の厚さだけ形成する方法、電極と配線を薄く
形成し、その後配線部分だけ所望の厚さだけ形成する方
法、従来技術と同じ膜厚のものを電極部分だけエッチン
グして取り除いて薄くする方法などがある。FIG. 5 shows a structure in which only the electrode portion has a thin film thickness. That is, 7'indicates a thin Al or Al alloy film electrode portion, and 10 indicates a thickened wiring portion. As a manufacturing method, a method of forming an Al or Al alloy film in a desired thickness separately from a wiring portion and an electrode portion, a method of forming electrodes and wiring thinly, and then forming only a wiring portion in a desired thickness There is a method in which only the electrode portion having the same film thickness as in the conventional technique is etched and removed to make the film thinner.

【００１５】図６では、従来技術とほぼ同じ膜厚のＡｌ
もしくはＡｌ合金膜上に、バリアメタルを形成し、その
上に薄いＡｌもしくはＡｌ合金膜を形成した構造であ
る。即ち、４はＡｌもしくはＡｌ合金膜、１１はバリア
メタルである。バリアメタルは、上下のＡｌ膜もしくは
Ａｌ合金膜、または下層のＡｌもしくはＡｌ合金膜とＡ
ｕワイヤとがお互いに拡散反応を起こさないための障壁
（バリア）で、Ｔｉ，Ｗ，Ｔａ，ＴｉＳｉ2などの導電
性材料である。バリアメタルの厚さは、用いる材料によ
ってバリア性が違うので、材料に合わせて変える。図６
では、電極部分にだけバリアメタルと薄いＡｌもしくは
Ａｌ合金膜があるが、バリアメタルだけが電極部分にあ
る構造でも、ＡｌもしくはＡｌ合金膜だけが電極部分に
ある構造でもよい。また、バリアメタルとＡｌもしくは
Ａｌ合金膜が配線部分にある構造でもよく、その場合は
全層の形成が一度にできるので効率的である。またバリ
アメタルは１種類だけでなく、２種類以上の材料を重ね
た構造でもよい。In FIG. 6, Al having the same film thickness as that of the prior art is used.
Alternatively, the barrier metal is formed on the Al alloy film, and the thin Al or Al alloy film is formed on the barrier metal. That is, 4 is an Al or Al alloy film, and 11 is a barrier metal. The barrier metal is composed of the upper and lower Al films or Al alloy films, or the lower Al or Al alloy film and A
The u-wire is a barrier for preventing mutual diffusion reaction, and is a conductive material such as Ti, W, Ta, and TiSi 2 . The thickness of the barrier metal varies depending on the material because the barrier property depends on the material used. Figure 6
Then, although the barrier metal and the thin Al or Al alloy film are present only in the electrode portion, the structure may be such that only the barrier metal is present in the electrode portion or only the Al or Al alloy film is present in the electrode portion. Further, a structure in which the barrier metal and the Al or Al alloy film are provided in the wiring portion may be used, and in that case, it is efficient because all layers can be formed at once. Further, the barrier metal is not limited to one type, and may have a structure in which two or more types of materials are stacked.

【００１６】図７では、Ｃｕ，Ａｇ，ＴｉＳｉ2等の導
電性材料の上に薄いＡｌもしくはＡｌ合金膜を形成した
構造である。即ち、１２はＣｕ、Ａｇ，ＴｉＳｉ2等の
金属膜である。この構造では、薄いＡｌもしくはＡｌ合
金膜７’による高い抵抗を、Ｃｕ，Ａｇ，ＴｉＳｉ2等
の材料で補うことができる。特にＣｕ、ＡｇなどはＡｌ
もしくはＡｌ合金よりも抵抗が低いので、従来技術と同
じ抵抗値を作る場合、全体の膜厚を薄くすることができ
る。また図７では、電極部分だけに薄いＡｌもしくはＡ
ｌ合金膜があるが、配線部と電極部にある構造でもよ
い。また、薄いＡｌもしくはＡｌ合金膜の下層は１種類
だけでなく、２種類以上の材料を重ねた構造でもよい。FIG. 7 shows a structure in which a thin Al or Al alloy film is formed on a conductive material such as Cu, Ag or TiSi 2 . That is, 12 is a metal film of Cu, Ag, TiSi 2, or the like. With this structure, the high resistance due to the thin Al or Al alloy film 7'can be supplemented with a material such as Cu, Ag, or TiSi 2 . Especially Cu and Ag are Al
Alternatively, since the resistance is lower than that of the Al alloy, the entire film thickness can be reduced when the same resistance value as that of the conventional technique is produced. Further, in FIG. 7, thin Al or A is formed only in the electrode portion.
Although there is an l-alloy film, it may have a structure in the wiring part and the electrode part. Further, the lower layer of the thin Al or Al alloy film is not limited to one type, and may have a structure in which two or more types of materials are stacked.

【００１７】また、本発明において配線部分まで薄いＡ
ｌおよびＡｌ合金膜が連続して形成されている場合、高
温で長時間保管または使用するような条件によっては、
配線部分のＡｌがＡｕワイヤと拡散反応をして、金属間
化合物が多量に形成され、接合抵抗の増加、接合強度の
低下の防止ができなくなることがある。これを防止する
実施例を図８および図９に示す。両実施例においては、
ＡｌもしくはＡｌ合金膜が少量しかなく、多量の合金形
成がなくなる。Further, in the present invention, the wiring portion is thin A
l and Al alloy films are continuously formed, depending on the conditions such as long-term storage or use at high temperature,
In some cases, Al in the wiring portion reacts with the Au wire in a diffusion reaction to form a large amount of intermetallic compounds, which makes it impossible to prevent an increase in bonding resistance and a decrease in bonding strength. An embodiment for preventing this is shown in FIGS. 8 and 9. In both examples,
Since there is only a small amount of Al or Al alloy film, a large amount of alloy is not formed.

【００１８】図８では、電極部分と配線部分との間に拡
散防止のバリアメタル１３を配置した構造である。バリ
アメタル１３としては、図６の実施例で記したような導
電性材料を用いる。図８では、電極部分と配線部分との
間に隙間をあけておいて、電極部分と配線部分の一部を
覆うようにバリアメタルを形成した構造である。また、
それとは反対に、バリアメタルを先に形成しておいてバ
リアメタルの一部を覆うように電極部分と配線部分を形
成してもよいし、バリアメタルを電極部分や配線部分が
覆いかぶさらないで接続する構造でもかまわない。In FIG. 8, a barrier metal 13 for preventing diffusion is arranged between the electrode portion and the wiring portion. As the barrier metal 13, the conductive material described in the embodiment of FIG. 6 is used. In FIG. 8, a gap is formed between the electrode portion and the wiring portion, and a barrier metal is formed so as to cover a part of the electrode portion and the wiring portion. Also,
On the contrary, the barrier metal may be formed first and then the electrode part and the wiring part may be formed so as to cover a part of the barrier metal, or the barrier metal may not be covered by the electrode part or the wiring part. It does not matter if the structure is connected with.

【００１９】図９では、薄いＡｌもしくはＡｌ合金膜
７’の下にPoly−Ｓｉ膜１４の配線があり、電極部分と
配線部分を接続した構造である。さらに、本発明の効果
を確実なものとした実施例を図１０に示す。これは、配
線部分と電極部分の間に導電性材料１５を形成するもの
であるが、その導電性材料５の一部がワイヤ６の一部を
覆って接触するようにした構造である。電気的な接続
は、その導電性材料１５とワイヤによってなされ、機械
的な接続はワイヤと薄いＡｌもしくはＡｌ合金膜７’の
電極部分で行なうものである。これにより、熱による接
合抵抗の増加をさらに抑えることができ、機械的にも十
分な強度が保たれ、熱履歴に対して非常に安定な電極と
なる。導電性材料１５は、図８の実施例で用いたバリア
メタルがよい。以上の説明は、主としてＳｉ半導体につ
いての記述であるが、化合物半導体やハイブリッドＩＣ
等にも応用可能である。In FIG. 9, the wiring of the Poly-Si film 14 is provided under the thin Al or Al alloy film 7 ', and the electrode portion and the wiring portion are connected to each other. Further, FIG. 10 shows an embodiment in which the effect of the present invention is ensured. This is a structure in which the conductive material 15 is formed between the wiring part and the electrode part, and a part of the conductive material 5 covers a part of the wire 6 and is in contact therewith. The electrical connection is made by the conductive material 15 and the wire, and the mechanical connection is made by the wire and the electrode portion of the thin Al or Al alloy film 7 '. This makes it possible to further suppress an increase in bonding resistance due to heat, maintain sufficient mechanical strength, and provide an electrode that is extremely stable against thermal history. The conductive material 15 is preferably the barrier metal used in the embodiment of FIG. Although the above description is mainly about the Si semiconductor, the compound semiconductor and the hybrid IC are described.
It is also applicable to etc.

【００２０】[0020]

【発明の効果】本発明によれば、量産に適した従来のワ
イヤボンディング技術を変えることなく、Ａｕワイヤと
ＡｌもしくはＡｌ合金電極の接合部の熱による経時変化
を抑えることができる。また、本発明の電極パッドは特
別な方法でなく、従来から行なわれている方法で作るこ
とができる。As described above, according to the present invention, it is possible to suppress the change with time due to heat at the joint between the Au wire and the Al or Al alloy electrode without changing the conventional wire bonding technique suitable for mass production. Further, the electrode pad of the present invention can be manufactured by a conventional method, not a special method.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例による半導体装置の断面図で
ある。FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

【図２】熱処理時間と接合抵抗変化の関係を示すグラフ
である。FIG. 2 is a graph showing the relationship between heat treatment time and change in junction resistance.

【図３】熱処理時間と剪断強度の関係を示すグラフであ
る。FIG. 3 is a graph showing the relationship between heat treatment time and shear strength.

【図４】熱処理時間と剪断強度の関係を示すグラフであ
る。FIG. 4 is a graph showing the relationship between heat treatment time and shear strength.

【図５】本発明の他の実施例による半導体装置の断面図
である。FIG. 5 is a sectional view of a semiconductor device according to another embodiment of the present invention.

【図６】本発明の他の実施例による半導体装置の断面図
である。FIG. 6 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.

【図７】本発明の他の実施例による半導体装置の断面図
である。FIG. 7 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.

【図８】本発明の他の実施例による半導体装置の断面図
である。FIG. 8 is a sectional view of a semiconductor device according to another embodiment of the present invention.

【図９】本発明の他の実施例による半導体装置の断面図
である。FIG. 9 is a sectional view of a semiconductor device according to another embodiment of the present invention.

【図１０】本発明の他の実施例による半導体装置の断面
図である。FIG. 10 is a cross-sectional view of a semiconductor device according to another embodiment of the present invention.

【図１１】従来の半導体装置の断面図である。FIG. 11 is a cross-sectional view of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

１ 半導体装置 ２ Ｓｉ基板 ３ ＳｉＯ2酸化膜 ４ 金属膜 ５ 表面保護膜 ６ Ａｕワイヤ ７ 金属膜の電極部 ７’ 薄いＡｌもしくはＡｌ合金膜の電極部 ８ 金属膜の配線部 ８’ 薄いＡｌもしくはＡｌ合金膜の配線部 ９ 薄いＡｌもしくはＡｌ合金膜 １０ 厚くした配線部分 １１ バリアメタル １２ ＡｌもしくはＡｌ合金以外の膜 １３ バリアメタル １４ Poly−Ｓｉ膜 １５ 導電性材料1 Semiconductor Device 2 Si Substrate 3 SiO 2 Oxide Film 4 Metal Film 5 Surface Protective Film 6 Au Wire 7 Metal Film Electrode Section 7 ′ Thin Al or Al Alloy Film Electrode Section 8 Metal Film Wiring Section 8 ′ Thin Al or Al Wiring part of alloy film 9 Thin Al or Al alloy film 10 Wiring part made thick 11 Barrier metal 12 Film other than Al or Al alloy 13 Barrier metal 14 Poly-Si film 15 Conductive material

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 基台上に形成された金属膜の所定部分を
電極部としてワイヤを接続すると共に、前記金属膜の他
の部分は配線部分とすることで回路を形成することが可
能なように構成された半導体装置において、前記金属膜
中、少なくとも前記電極部分に相当する部分の厚さが
０．２５μｍ以下に形成されていることを特徴とする半
導体装置。1. A circuit can be formed by connecting a wire with a predetermined portion of a metal film formed on a base as an electrode portion and connecting a wire to the other portion of the metal film. In the semiconductor device having the above-mentioned constitution, a thickness of at least a portion corresponding to the electrode portion in the metal film is formed to be 0.25 μm or less. 【請求項２】 前記金属膜がＡｌもしくはＡｌ合金膜で
形成されている請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein the metal film is formed of Al or an Al alloy film. 【請求項３】 前記金属膜がＡｌもしくはＡｌ合金膜で
あり、導電性材料の上に形成されている請求項１に記載
の半導体装置。3. The semiconductor device according to claim 1, wherein the metal film is an Al or Al alloy film and is formed on a conductive material. 【請求項４】 基台上に直接あるいは間接的に形成さ
れ、ワイヤが接続された所定厚さの金属膜で構成された
電極部であって、前記電極部厚さが０．２５μｍ以下で
ある電極部と、前記電極部と電気的に接続されたバリア
メタル層と、前記バリアメタル層と電気的に接続された
配線部とから成ることを特徴とする半導体装置。4. An electrode portion formed of a metal film of a predetermined thickness directly or indirectly formed on a base and having a wire connected thereto, wherein the electrode portion has a thickness of 0.25 μm or less. A semiconductor device comprising: an electrode portion, a barrier metal layer electrically connected to the electrode portion, and a wiring portion electrically connected to the barrier metal layer. 【請求項５】 前記バリアメタル層がPoly−Ｓｉ膜で形
成されている請求項４に記載の半導体装置。5. The semiconductor device according to claim 4, wherein the barrier metal layer is formed of a Poly-Si film. 【請求項６】 前記バリアメタル層が前記ワイヤに接続
されている請求項４に記載の半導体装置。6. The semiconductor device according to claim 4, wherein the barrier metal layer is connected to the wire.
JP3238628A 1991-08-26 1991-08-26 Semiconductor device Pending JPH0555296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3238628A JPH0555296A (en) 1991-08-26 1991-08-26 Semiconductor device

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JP3238628A JPH0555296A (en) 1991-08-26 1991-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0555296A true JPH0555296A (en) 1993-03-05

Family

ID=17032974

Family Applications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784545B2 (en) 2002-04-12 2004-08-31 Nec Compound Semiconductor Devices, Ltd. Semiconductor device having pad electrode connected to wire
JP2017183672A (en) * 2016-03-31 2017-10-05 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784545B2 (en) 2002-04-12 2004-08-31 Nec Compound Semiconductor Devices, Ltd. Semiconductor device having pad electrode connected to wire
JP2017183672A (en) * 2016-03-31 2017-10-05 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method

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