JPH0555043A - Small-sized coil and its manufacture, manufacture of magnetic head and magnetic storage device - Google Patents

Abstract

PURPOSE:To obtain a small-sized thin-film coil, which can be assembled easily into a thin-film integrated circuit, by stacking one-turn coils on a substrate so as to sandwich insulating layers are connected by means of via holes and they are formed to be a spiral shape. CONSTITUTION:One-turn coils 2 are stacked on a substrate 1 so as to sandwich insulating layers and connected by means of via holes 5; they are formed to be a spiral shape. In such a coil, the one-turn coils 2 are formed by etching a conductor thin film deposited on the substrate 1; input ends 3a to 3c and output ends 4a to 4c of the one-turn coils 2 are formed in the same direction of rotation of all the one-turn coils 2 on both ends of cut parts of the one-turn coils 2. The input ends 3b, 3c are installed in such a way that they are overlapped with the output ends 4a, 4b of the one-turn coils 2 which are adjacent direclty under them. The input ends 3b, 3c and the output ends 4a, 4b of the one-turn coils 2 which are adjacent directly under them are connected electrically by means of the via holes 5.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to small coils manufactured by thin film technology. As the applications of integrated circuits using thin films such as semiconductor integrated circuits have expanded, it is often the case that conventional inductance elements cannot use the active elements to satisfy the desired performance. There is a strong demand for it to be incorporated into.

Therefore, there is a need for a small coil that is manufactured at the same time as the thin film circuit element, is easy to assemble, and has a large inductance. Further, in a semiconductor device, there is a demand for an element that can maintain a memory state during operation without installing a standby power source inside when power supply is stopped.

Therefore, it is necessary to incorporate a magnetic memory device, which does not require a power source to retain the memory, into the semiconductor device.

[0004]

2. Description of the Related Art Heretofore, an inductance to be incorporated in a thin film integrated circuit has been realized by a one-turn coil formed on a plane or a spiral coil formed on a plane in a spiral shape.

However, these planar coils have a drawback that the integrated circuit cannot be downsized because the inductance with respect to the occupied area is small. On the other hand, a method of manufacturing a microcoil having a large inductance has been devised for application to a microactuator on a silicon substrate.

In this microcoil, parallel conductive line patterns are formed on a substrate, magnetic or dielectric rods serving as cores are formed thereon, and the conductive line patterns are formed on the upper and side surfaces of the core. It is manufactured by forming parallel conductive wire patterns that are connected to form a coil.

In the manufacture of this microcoil, it is necessary to leave the conductor only on the side surface of the core and pattern the conductor on this side surface. Therefore, it is difficult to form a fine pattern, and it is difficult to manufacture this coil by the fine processing used for manufacturing a thin film circuit element.

Next, as a conventional random access magnetic storage device, one using a magnetic core or a magnetic wire has been widely used. Each of these is to assemble an individual magnetic core or an individual magnetic wire into a magnetic storage device.

Therefore, these constituent parts must have a size that can be easily handled in the assembly process, and cannot be downsized indiscriminately. In order to solve this problem, a memory device has been devised in which a magnetic thin film is etched to form a memory portion.

However, since the conductor is not a coil but a straight line, the storage density is low and the read S / N ratio is poor. Furthermore, since the electronic circuit is manufactured and combined as a device separate from the memory portion formed of a magnetic material, it is difficult to realize a small-sized memory device comparable to a semiconductor integrated circuit.

[0011]

In the conventional coil manufacturing method, it is impossible to form a large inductance in a small area on the substrate, and it is impossible to manufacture it by the manufacturing process of the thin film circuit. For this reason, it was difficult to incorporate inductance in thin film integrated circuits.

It is an object of the present invention to provide a small coil manufactured by thin film technology and easy to incorporate in a thin film integrated circuit. Furthermore, in the conventional random access magnetic storage device, it is difficult to miniaturize the components or increase the density of the storage cells, and the electronic circuit must be formed as a separate device, and integrated on one substrate. There is a problem that it cannot be formed.

A second object of the present invention is to provide an integrated high-density magnetic memory device manufactured by using a thin film circuit manufacturing process.

[0014]

1 and 6 are perspective views of a first embodiment and a third embodiment of the present invention, respectively, showing the shape of a coil which is visible when the core and the insulating layer are removed. There is.

FIG. 4 is an explanatory view of the second embodiment of the present invention.
FIG. 5 shows the shape of the coil and the method of connection by a via hole. FIG. 5 is a manufacturing process drawing of the second embodiment of the present invention, and a sectional view shows the manufacturing process of the coil.

FIG. 9 is a sectional view of the fourth embodiment of the present invention.
The manufacturing process is represented by a sectional view of the coil. FIG. 11 is a manufacturing process drawing of the fifth embodiment of the present invention, showing a cross section of the magnetic head.

The first configuration of the present invention will be described with reference to FIG.
Overlaid on the substrate 1 with insulating layers 7a, 7b, 7c interposed
One turn coil 2 is connected by via hole 5 and spiral
The one-turn coil 2 is a substrate
1 is formed by etching the conductive thin film deposited on
The input ends 3a, 3b, 3c of the one-turn coil 2 and
And the output ends 4a, 4b, 4c of the one-turn coil 2
All of the one-turn coils 2 are the same at both ends of the cutting part.
The one-turn coil 2 is provided in order of one rotation direction.
The input ends 3b and 3c of the one-turn coil 2 are the one-turn
Output of another one-turn coil adjacent immediately below coil 2
Installed so as to overlap the ends 4a and 4b,
Input terminals 3b and 3c of the file 2 and another one immediately below the input terminals 3b and 3c.
The output ends 4a and 4b of the turn coil are connected to the via hole 5.
It is characterized by being electrically connected to
The second structure is shown in FIG. 4 and FIG.
Formed by etching the conductor thin film deposited on top
Two types of spiral coil 4 wound in opposite directions
2 and 44 are alternately layered with the insulating layer 45 sandwiched therebetween, and
Between outer peripheral ends 48 of adjacent spiral coils 42, 44
Adjacent to the via hole 43b for connecting the
The inner peripheral ends 47 of the spiral coils 42 and 44 are mutually
The via holes 43a to be connected are alternately provided every other layer.
Characterized by being configured, and a third configuration
Is formed by etching the conductive thin film deposited on the substrate.
The coil-shaped conductor pattern formed is
And the input and output ends of the coiled conductor pattern are
Current in the same rotation direction for all of the conductor patterns
Characterized by being electrically connected so that
And the fourth configuration is based on FIG.
A coil formed on the plate 1, wherein the coil is a lower layer
Conductor wire 10_a1-10_a5From one of the first via holes, above
The lower layer conductor line 10 passing through the layer conductor line and the second via hole
_a1-10_a5To one lower conductor line adjacent to the other one
The lower conductor wire is formed with a loop extending to one pitch
10 _a1-10_a5Is the lower conductor thin film deposited on the substrate 1.
The film is etched into parallel conductor patterns.
Formed, and the upper conductor line 11_a1~ 11_a5Is the lower layer
Electric wire 10_a1-10_a5With insulating layers 16 and 17 between them
The deposited upper conductor thin film is etched and parallel to each other
Formed as a transparent conductor pattern, the first via hole 1
Two_a1~ 12_a5Are each of the lower conductor lines 10_a1-10_a5One
An end and each upper conductive line 11 located immediately above the end_a1~ 11_a5
Electrically connected to one end of the second via hole 13_a1~
Thirteen_a5Are each of the lower conductor lines 10_a1-10_a5The other end of
And each upper conductive wire 11 located immediately above_a1~ 11_a5of
It is characterized by being electrically connected to the other end.
And a fifth configuration, referring to FIG.
Magnetic shield of small coil of second, third or fourth construction
The manufacturing method of the above, wherein the coil is arranged on the substrate 1.
A magnetic underlayer 19 is formed on the power region to cover the region,
Insulating layer formed on the magnetic underlayer 19 and covering the coil
7 by etching the bottom part along the outer periphery of the coil.
The surface of the geomagnetic material layer 19 is exposed, and then the underlying magnetic material
Magnetic material that contacts the exposed surface of layer 19 and covers the coil
Characterized in that layer 21 is deposited and formed,
Also, the method of manufacturing the magnetic head according to the sixth configuration is as shown in FIG.
1 has a magnetic pole 66 made of a magnetic material and a coil
A method of manufacturing a magnetic head of a magnetic device, comprising: a substrate 61
A magnetic film 62 is deposited on the magnetic film 62, and an air-core part is formed on the magnetic film 62.
First to third small coil 63 having 64 is formed.
Then, a magnetic substance is embedded on the magnetic substance film 62 to fill the air core portion 64.
The small coil 63 is covered and deposited, and then the small coil 6
Photomagnetically etch the magnetic material deposited to cover 3
Forming the magnetic pole 66 in the shape of
67, and then the curve of the non-magnetic material (67)
It is characterized in that it is provided, and in the seventh configuration
Such a magnetic storage device has a substantially flat structure provided on a substrate.
X line 91 consisting of a plurality of conductive lines, and the X line
91 and substantially parallel to each other with an insulating layer interposed therebetween.
Y line 92 composed of a plurality of conductive lines, and X line 91
And at each intersection of the Y line 92,
Connect both terminals to the X line 91 and the Y line 92.
A core made of a scraped ferromagnetic material.
Small coil 96 and a semiconductor circuit provided on the substrate
Then, select one of the X lines 1 and set a constant voltage in both directions.
An X drive circuit 93 for supplying a flow and provided on the substrate
It is a semiconductor circuit, and one of the Y lines 92 is selected.
The output current of the X drive circuit 93 is set to the selected Y line.
Connected to one of the selected X-lines and
Y drive circuit 94 that flows through coil 93, and on the substrate
The semiconductor circuit provided, the voltage of the X line 91
Measured and connected with the selected X and Y lines
Voltage fluctuations that differ depending on the magnetization direction of the core of the coil 93
And a detection circuit 95 for detection.
It

[0018]

With reference to FIGS. 1, 4, 5, and 6, the conductor portion of the coil according to the present invention has one-turn coils 2a, 2b formed on a surface that is regarded as a substantially flat surface in the patterning process. , 2c, spiral coils 42, 44,
Lower layer conductive lines 10 _a1 to 10 _a5, and upper layer conductive lines 11 _a1 to 1
1 _a5 and via holes 5, 1 formed almost perpendicular to the surface
2 _a1 ~12 _a5, 43a, is constituted by 43b, 13 _a1 ~13 _a5. Further, the conductor of the small coil according to the third configuration is also formed by connecting the patterned flat coil.

Therefore, the coil can be formed by a method that is commonly used in the manufacture of thin film circuits, that is, patterning of a conductor film and formation of via holes or connection wirings.

Therefore, the coil according to the present invention can be manufactured by using the same precise processing means as used for manufacturing the thin film circuit element. Therefore, miniaturization is easy, and since it can be manufactured at the same time as a thin film element, it can be easily incorporated in a thin film integrated circuit.

Since the coil according to the present invention has a three-dimensional structure, the inductance can be increased with respect to the installation area and the size can be reduced. In addition, the inductance can be further increased by disposing a magnetic body in the coil.

Further, since the magnetic shield according to the present invention is formed by etching and depositing a magnetic substance, it can be manufactured simultaneously with a semiconductor integrated circuit. Next, in the sixth configuration of the present invention, a magnetic head is manufactured by forming curves in the etching step, the deposition step, and the final step. Therefore, the magnetic head can be manufactured in the same manner as in the method of manufacturing a thin film circuit, so that there is an effect that it can be manufactured in a small size and precisely.

In the seventh configuration, the element constituting the memory cell is the above-mentioned small coil having a ferromagnetic body as a core. Therefore, a high magnetic recording density and a good S / N ratio can be easily obtained.

This coil can be manufactured at the same time as the manufacture of the semiconductor integrated circuit, and is much smaller than the conventional magnetic core or the like. Further, since the X line, the Y line, the X and Y drive circuits, and the detection circuit can be manufactured by using the manufacturing process used for the semiconductor integrated circuit, all the elements can be manufactured monolithically. is there.

[0025]

EXAMPLES The present invention will be described in detail with reference to Examples. The first embodiment shown in FIG. 1 of the present invention is manufactured by the process shown in FIG.

FIG. 2 is a manufacturing process diagram of the first embodiment of the present invention. FIGS. 2A to 2D and 2F are sectional views taken along the line AA ′ of FIG. e) shows a cross section that passes through BB ′ in FIG. 1 and is perpendicular to the substrate.

First, referring to FIGS. 1 and 2A, a silicon wafer 1a having an insulating layer 1b made of a SiO ₂ film on its surface is used as a substrate 1, and a thickness of 50 is formed on the substrate 1.
Deposit a 0 nm conductor film, such as an aluminum film,
This conductor film is photoetched to form the one-turn coil 2a.

Next, referring to FIG. 2B, for example, S
iO ₂ insulating film is deposited consisting of, by photo-etching to form an insulating layer 7a having a hole 5A to reach the output end surface of the one-turn coil which covers the one-turn coil.

The insulating film for forming the insulating layer 7a is formed by a step of forming a flat SiO ₂ film, for example, SOG (Spi).
on glass), TEOS (Tetra ethoxy silane) -CVD,
After forming a flat SiO ₂ film that fills the one-turn coil 2a by using phosphorus glass flow, plasma CV is further performed.
By depositing a SiO ₂ film having a thickness of about 500 nm using D, a flat and dense insulating layer can be obtained.

Next, referring to FIGS. 1 and 2 (c),
A hole 5A on the output end 4a of the one-turn coil 2a is filled with a conductor to form a via hole 5. The conductor is embedded by, for example, selective growth of metal by CVD, 500 ° C. to 5 ° C.
It can be performed by aluminum sputter at 50 ° C., or aluminum with a bias voltage applied.

Further, if necessary, the conductor on the insulating layer 7a is removed by etching back. The via holes need only be at least electrically connected, and need not be completely buried.

Next, referring to FIGS. 1 and 2 (d),
After forming the second-layer one-turn coil 2b in which the output end 4a and the input end 3b of the one-turn coil 1a are electrically connected by the via hole 5 in the same manner as the one-turn coil of FIG. The insulating layer 7b is formed in the same manner as in FIG.

The hole to be the via hole 5 in FIG. 2E is opened at the same time when the insulating layer 7b is formed. Next, referring to FIGS. 1 and 2E, a via hole 5 is formed by embedding on the output end of the one-turn coil 2b to form a one-turn coil 2c in which the via hole 5 and the input end are connected.

Similarly, the one-turn coils 2 spirally connected by the via holes 5 can be laminated in the same manner. Finally, referring to FIG. 2 (f), an insulating layer 7c serving as a protective film is provided.

According to this embodiment, it is possible to form a solenoid coil having a large inductance in a small area.
For example, in the present embodiment, a diameter of 10 is obtained by stacking one-turn coils each having a conductor thickness of 500 nm and a width of 15 μm in 10 layers.
The inductance of a coil of 0 μm and height of 10 μm is about 2
× 10 ^-9 henry. This value is 5 times the inductance 0.4 × 10 ⁻⁹ henry of a spiral coil having an outer diameter of 110 μm, an inner diameter of 10 μm, and three revolutions using a conductor wire of the same cross section.

FIG. 3 is a cross section of the first embodiment having a magnetic core.
FIG. 4 is a diagram showing a coil structure according to a modification of the first embodiment.
is doing. The manufacturing of this modified example will be described first with reference to FIG.
Core 8 of insulating layer 1b formed on recon wafer 1a
Etching away the area where the
O ₂The stopper 9 for etching the film is lifted, for example.
Form off.

Then, the one-turn coil 2 and the insulating layer 7 are formed in the same manner as in the first embodiment. Next, a hole for forming a core is formed in the center of the coil of the insulating layer by, for example, ion etching, and the hole is used as a core in which a magnetic material is embedded by, for example, plating or lift-off.

In this modification, a solenoid coil having a large inductance can be easily manufactured. next,
A method of manufacturing a small coil according to a second embodiment of the present invention,
This will be described with reference to FIGS.

First, referring to FIG. 5A, a silicon wafer 41a having an insulating layer 41b on its surface is used as a substrate 41, a conductor is deposited on the substrate 41, and photo-etching is performed to wind the spiral. The coil 42 is formed.

Next, referring to FIGS. 4 and 5 (b), an insulating layer 45 is deposited and a via hole 43a for connecting to the inner peripheral end 47 of the spiral coil 42 is formed in the same manner as in the first embodiment.
To form.

Then, in the same manner, referring to FIGS. 4 and 5C, the spiral coil 4 wound in the counterclockwise direction.
4, and a via hole 43b connected to the outer peripheral edge 48 thereof is formed.

Next, referring to FIG. 5D, the spiral coil 42 wound in the clockwise direction and the via hole 43a connected to the inner peripheral end 47 are formed. Then, FIG.
Referring to (e), a spiral coil 44 wound in a counterclockwise direction is formed, and a coating layer 46 made of an insulating material is formed thereon.
Deposit.

In this embodiment, a coil having a large inductance can be realized with a small volume. In addition, in the first and second embodiments, electrical connection can be made by a connection wiring provided inside or outside the coil instead of the via hole.

The third embodiment shown in FIG. 6 of the present invention is shown in FIG.
It is manufactured by the following steps shown in. FIG. 7 is a manufacturing process diagram of the third embodiment of the present invention, showing a cross section of a coil perpendicular to the surface of the substrate 1 including CC ′ shown in FIG.

First, referring to FIGS. 6 and 7 (a), a lower conductor thin film is formed, for example, with a thickness of 1.0 μm on a substrate 1 made of a silicon wafer 1a on the surface of which an insulating layer 1b is provided.
m deposition and etching to form lower layer conductive lines 10 _a1 to 10 _a5 having patterns arranged in parallel with each other and wiring end portions 14 at one end thereof.

Next, referring to FIG. 7B, for example, S
An insulating film 16 made of an iO ₂ film is deposited. Then, FIG.
Referring to (c), a core 1 having a width smaller than the inner diameter of the coil and having a width narrower than the inner diameter of the coil and extending along the line connecting the centers of the lower conductive lines 10 _a1 to 10 _a5 is formed by depositing a magnetic substance having a thickness of 3 μm, for example.
8 is formed. A ferromagnetic material such as an iron alloy deposited by sputtering can be used as the magnetic material.

Next, referring to FIG.
m of the SiO ₂ film is deposited by plasma CVD and then flattened by the same method used for forming the insulating film 7a of the first embodiment. Thereafter, the SiO ₂ film is further deposited by plasma CVD to remove the SiO ₂ film from the SiO ₂ film. The insulating layer 17 is formed.

Next, a via hole 12A is formed in the insulating layer on the wiring terminal portion 14 of each of the lower conductive lines _10a1 to _10a5 . At the same time, a hole 13A for a via hole is formed in the insulating layer on the other end of each lower layer conductive line _10a1 to _10a5 .

Next, referring to FIG. 7E, the first embodiment
Embedding a conductor into the hole 12A, and the holes 13A in the same manner as, the via holes _{12 a1 ~12 a5, 13 a1 ~13} a5
To form.

Next, the upper conductor film is deposited by sputtering.
Stacked and etched, via hole 13 at one end_a1~ 13
_a5Has a wiring terminal part 15 connected to
12 _a1~ 12_a5Layers parallel to each other that connect with
Conductive wire 10_a1-10_a5To form as.

According to this embodiment, a solenoid coil parallel to the substrate can be easily manufactured by photoetching and forming a via hole. The core 18 may be omitted if it is unnecessary.

FIG. 8 is a partial breakage of a modification of the third embodiment of the present invention.
FIG. 3 is a perspective view showing a coil shape. This modification
6 and 7 in the third embodiment with reference to FIG.
Upper conductive line 11 shown in_a1~ 11_a5Both ends of the down
It is provided by bending, and the lower conductive wire 10 _a1-10_a5Connect with
Beer hole 12_a1~ 12_a5, 13_a1~ 13_a5Depth of
Can be shortened.

In the manufacturing process of this modification, first, the lower conductive wire 1
0a, the insulating layer 16, and the core 18 are formed, and then the core 18
The insulating layer is removed by using the mask as a mask, and then the insulating layer 17 is deposited by using, for example, SOG so as to reduce the step difference on the side surface of the core 18, and then the via holes 12a and 13a are provided, and then the upper conductive line 11a is formed. ..

In this modification, since the via hole may be shallow, it is easy to manufacture. The fourth embodiment of the present invention is as follows.
Referring to FIG. 9A, a magnetic substance is deposited on the substrate, and the region where the coil is formed is rubbed and removed by etching to form a base magnetic substance layer 19.

[0055] Subsequently, an insulating layer 2 consisting of a flat SiO ₂
0 is deposited. Next, with reference to FIG. 9B, the coil according to the first embodiment of the present invention is formed.

Further, an opening reaching the underlying magnetic layer 19 is provided in the insulating layer around the coil, leaving the connection with the external wiring 6, and after depositing the magnetic substance, etching is performed leaving the portion covering the coil. Then, the magnetic layer 21 that covers the coil is formed.

According to this embodiment, the magnetically shielded coil can be easily formed by using the manufacturing process of the thin film circuit. Further, in this embodiment, the magnetic shield and the core may be formed in contact with each other. At this time, since a magnetic circuit closed by the magnetic shield and the core is formed, the self-inductance is increased.

Of course, the method of forming the magnetic shield described above can be applied to the coils of the second to third embodiments of the present invention. FIG. 10A is an explanatory view of an application example of the first and second embodiments of the present invention, and shows a physical quantity measurement circuit by an impedance bridge in which a sensor 71 is incorporated.

A sensor 71 such as a humidity sensor having a capacitor having a tantalum oxide film as a dielectric, resistors R1 to R3, and a coil 70 manufactured in the same manner as the first to second embodiments of the present invention are provided on a substrate. , To form the bridge circuit shown in FIG.

The oscillation circuit 72 for generating the excitation AC current and the operation amplifier 73 are formed on the same substrate as the substrate on which the bridge circuit is formed, and the electricity of the sensor that changes in response to a change in ambient physical quantity, for example, humidity. The amount of change in capacitance is output to the output signal terminal 74.

In this example, since the sensor and the measuring circuit can be integrated on the same substrate, a stable and compact measuring element can be realized. FIG. 10B is an explanatory diagram of an application example of the third embodiment of the present invention, which shows an outline of a current detector.

Referring to FIG. 8, the current detector includes a coil 81 according to a third embodiment of the present invention, which has a magnetic core connected to an external circuit whose current input terminal 85 produces a current to be detected. A Hall element 80 is provided in close proximity to the source 83 and the drain 82 of the Hall element are connected to a constant current circuit, and a gate electrode of the Hall element is a detection circuit 84 including a semiconductor circuit for detecting a potential difference between the Hall element 80 and the substrate. And the coil 81, the Hall element, the constant current circuit and the detection circuit 84 are provided on the same semiconductor substrate.

In this application example, it is easy to electrically separate the external circuit from the detection circuit 84, and the coil 81
Since the Hall element 80 and the Hall element 80 can be provided in close proximity to each other, it is possible to realize a detection device that is less affected by the semiconductor circuit and is not affected by external noise.

The fifth embodiment of the present invention is a method of manufacturing a floating magnetic head for perpendicular magnetic recording, which is manufactured by the following steps. First, referring to FIG. 11A, a magnetic film 62 having a thickness of 5 μm is deposited on the substrate 61 by, for example, sputtering.

Then, a laminated winding solenoid type small coil 63 having an air core portion 64 thereon is formed by the method of the second embodiment. The conductor of the coil is formed by stacking 10 layers of a 5-fold spiral aluminum pattern having a thickness of 0.2 μm.

Next, referring to FIG. 11B, a magnetic material 65 is deposited so as to cover the coil. Then, FIG.
Referring to (c), the surface of the main magnetic pole 66a is masked by photo-etching using reactive anisotropic ion etching to remove other parts until the small coil 63 is exposed.
The outer peripheral portion 66b and the core portion 66c that form the above are molded.

Next, a non-magnetic material 67 is deposited, and this is curved and etched to remove it until the tip of the main magnetic pole 66a is exposed. The main magnetic pole 66a may be exposed by making a curve by polishing instead of etching.

In this embodiment, a small and precise magnetic head can be manufactured. FIG. 12 shows a sixth embodiment of the present invention and shows the main configuration of the magnetic memory device.

All coils 96 are formed at the intersections of orthogonal X and Y lines 91, 92 in the manner described above. Next, the X and Y lines 91 and 92 are formed by applying the two-layer wiring technique used in the semiconductor integrated circuit.

At this time, a contact hole for connecting with the terminal of the coil 96 is opened in advance. The semiconductor elements forming the X and Y drive circuits 93 and 94 and the detection circuit 95 can be formed before the coil 96 is manufactured.

Part of the wiring and heat treatment is the coil 96.
Or the formation of the X, Y lines 91, 92 at the same time. Other semiconductor circuits not shown in the drawing are similarly formed.

FIG. 13 is a circuit diagram of an essential part of a sixth embodiment of the present invention, showing a drive circuit and a detection circuit. Below, Figure 1
2, the operation of this embodiment will be described with reference to FIG.

The X drive circuit 93 has an n-channel transistor Tr1 having a drain connected to the X line and a source connected to the positive power supply Vss, and an n-channel transistor Tr1 having a drain connected to the same X line and a source connected to the negative power supply -Vss. It consists of a constant current circuit in both positive and negative directions composed of a channel transistor Tr2.

At the time of writing, positive and negative gate voltages A ₁ are applied to one constant current circuit selected by the address recorder with respect to 1 and 0 of the bit to be written, so that the selected X line is positive or negative. It is driven by a constant current.

The Y driving circuit 94 is composed of transistors T _r 5 and T _r 6 switches for grounding and opening each Y line, and applies a pulse to the gates a _{1 and} a ₂ of the transistors selected by the address recorder _, Ground the Y line.

Therefore, at the time of writing, it is connected to the selected X line such as X ₁ and selected Y line such as Y 1.
_A positive or negative constant current flows through the coil 96 connected to ₂ . Due to this constant current, the core of the coil 96 is magnetized in opposite directions depending on whether the write bit is positive or negative, that is, 1 or 0 of the write bit, and is held as a magnetic record.

At the time of reading, a unidirectional current, for example, a positive current is passed through the X line selected by the address recorder, for example, X ₁ . Further, in synchronization with the current of X ₁ , the compensation line X _S is driven by a current of the same direction and the same magnitude.

The selection of the Y line is the same as that for writing.
Therefore, at the time of reading, the selected X line, for example, X ₁
It is connected, and is selected Y line for example Y ₂ connected to a constant current to the coil 96 for example a positive were flowing in.

At this time, when the magnetization direction of the selected coil is the same as the current at the time of writing and is not reversed,
The voltage induced on the selected X line X ₁ is the sum of the voltage on the X and Y lines resulting from the change in the inductance of _the coil itself and the paramagnetic magnetization of the saturated core.

On the other hand, a current similar to that of the X line flows through the compensation coil 97 connected to the compensation line X _S and also to the selected Y line, for example, Y ₂ . The core of the coil 97 is always magnetized in the same direction, so that the voltage induced in the compensation line X _S is approximately the same as the voltage induced in the selected X line X ₁ .

Therefore, each X line and compensation line X_SElectric power
Output O of amplifier 98 for detecting pressure difference _1,O₂No matter what
No power appears. On the contrary, when reading,
The magnetization direction is opposite to the current during writing and reversal occurs.
Selected X line X₁Induced voltage
Is_,Inductance of coil itself and voltage due to line
In addition, the voltage generated from the reversal of the magnetization of the core is added.
It

Therefore, the difference voltage between the compensation line X _S and
Only the voltage resulting from the reversal of the magnetization of the core is detected and output. In this example, the compensation line can reduce noise. Furthermore, all the elements can be formed monolithically on the semiconductor substrate, small size and high density recording can be realized, and manufacturing is simple and easy.

In order to keep the record after reading,
Rewrite.

[0084]

According to the present invention, a coil having a small size and a large inductance can be manufactured by using the method for manufacturing a thin film circuit. Therefore, the coil can be easily incorporated into the integrated circuit device, and the integrated circuit device can be easily manufactured. It greatly contributes to the performance improvement of.

Further, a precise magnetic head can be easily manufactured. Further, according to the present invention, a coil having a magnetic substance as a memory element can be manufactured by using the method for manufacturing a thin film integrated circuit, so that a monolithically integrated magnetic memory device having a high recording density can be provided, and the magnetic memory It greatly contributes to the performance improvement of the device.

[Brief description of drawings]

FIG. 1 is a perspective view of a first embodiment of the present invention.

FIG. 2 is a manufacturing process chart of the first embodiment of the present invention.

FIG. 3 is a sectional view of a first embodiment having a magnetic core.

FIG. 4 is an explanatory diagram of a second embodiment of the present invention.

FIG. 5 is a manufacturing process diagram of a second embodiment of the present invention.

FIG. 6 is a perspective view of a third embodiment of the present invention.

FIG. 7 is a manufacturing process chart of a third embodiment of the present invention.

FIG. 8 is a partially cutaway perspective view of a modification of the third embodiment of the present invention.

FIG. 9 is a sectional view of a fourth embodiment of the present invention.

FIG. 10 is an explanatory diagram of an application example of the present invention.

FIG. 11 is a manufacturing process chart of the fifth embodiment of the present invention.

FIG. 12 is a configuration diagram of a sixth embodiment of the present invention.

FIG. 13 is a circuit diagram of essential parts of a sixth embodiment of the present invention.

[Explanation of symbols]

1 substrate 1a silicon wafer 1b insulating layer 2, 2a, 2b, 2c one-turn coil 3, 3a, 3b, 3c input end 4, 4a, 4b, 4c output end 5 via hole 5A, 12A, 13A hole 6 external wiring 7a, 7b, 7c Insulating layer 8 Core 9 Stopper 10 _a1 , 10 _a2 , 10 _a3 , 10 _a4 , 10 _a5 Lower conductive wire 11 _a1 , 11 _a2 , 11 _a3 , 11 _a4 , 11 _a5 Upper conductive wire 12 _a1 , 12 _a2 , 12 _a3 , 12 _a4 , 12 _a5 via hole 13 _a1 , 13 _a2 , 13 _a3 , 13 _a4 via hole 14, 15 wiring end part 16, 17 insulating layer 18 core 41 substrate 41a silicon wafer 41b, 45 insulating layer 42, 44 spiral coil 43a, 43b via hole 46 coating layer 47 inner end 48 outer end 49 external wiring 61 substrate 62 magnetic film 63 small coil 64 air core part 5 magnetic 66 pole 66a main magnetic pole 66b outer peripheral part 66c core 67 nonmagnetic body 70 coil 71 sensor 72 oscillator 73 amplifier 74 output signal terminal 80 Hall element 81 the coil 82 drain 83 source 84 detector 85 current input terminal 91, X ₁ to X _N X lines 92, Y ₁ ~Y _N Y line 93 X driver circuit 94 Y driving circuit 95 detecting circuit 96 coil 97 compensation coil 98 amp

Claims (7)

[Claims] 1. An insulating layer (7a, 7b, 7) on a substrate (1).
A coil formed by spirally connecting one-turn coils (2) sandwiching c) with a via hole (5), wherein the one-turn coil (2) is a conductor thin film deposited on a substrate (1). Formed by etching the one-turn coil (2), the input ends (3a, 3b, 3c) and the output ends (4a, 4b, 4c) of the one-turn coil (2) are provided at both ends of the cut portion of the one-turn coil (2). All of (2) are sequentially provided in the same rotation direction, and the one-turn coil (2) is connected to the input end (3) of the one-turn coil (2).
b, 3c) is installed so as to overlap with the output ends (4a, 4b) of the other one-turn coils immediately below the one-turn coil (2), and the input ends (3b, 3c) of the one-turn coil (2) A small coil characterized in that an output end (4a, 4b) of another one-turn coil adjacent immediately below is electrically connected by a via hole (5). 2. A conductor film deposited on a substrate (41) is formed by etching, and is wound in mutually opposite directions.
A via hole (43b) in which spiral coils (42, 44) of different types are alternately layered with an insulating layer (45) sandwiched therebetween, and the outer peripheral ends (48) of the adjacent spiral coils (42, 44) are connected to each other. And a via hole (43a) interconnecting the inner peripheral ends (47) of the spiral coils (42, 44) adjacent to each other are provided alternately every other layer. 3. A coil-shaped conductor pattern formed by etching a conductor thin film deposited on a substrate is overlaid with an insulating layer interposed therebetween, and the input and output ends of the coil-shaped conductor pattern are the coil shape. A small coil characterized in that all of the conductor patterns are electrically connected so that current flows in the same rotation direction. 4. A coil formed on a substrate (1), wherein the coil is formed from one of the lower conductor lines (10 _a1 to 10 _a5 ) to a first via hole, an upper conductor line, and a second via hole. street lower conductive collector line loop leading to (10 _a1 ~10 _a5) other one of the lower conductive line adjacent to the one being formed as a pitch, lower conductive collector lines (10 _a1 ~10 _a5) Is
The lower conductor thin film deposited on the substrate (1) is etched to form conductor patterns parallel to each other, and the upper conductor lines (11 _{a1 to} 11 _a5 ) are connected to the lower conductor lines (1
0 _a1 to 10 _a5 ) and the upper conductor thin film deposited with the insulating layers (16, 17) sandwiched therebetween are etched to form conductor patterns parallel to each other, and the first via holes (1
2 _{a1 to} 12 _a5 are the lower conductor wires (10 _a1 to 1)
0 _a5 ) and one of the upper conductive wires (1
1 _{a1 to} 11 _a5 ) are electrically connected to one end, and the second via holes (13 _{a1 to} 13 _a5 ) are connected to the lower conductor lines (10 a _{1 to} 11 a 5).
_(a1 to _10a5 ) and the other end of each upper layer conductive wire ( _11a1 to _11a5 ) located immediately above the other end of the coil. 5. In manufacturing a magnetic shield for a small coil according to claim 1, claim 2, claim 3 or claim 4,
The base magnetic layer (19) covering the region of the substrate (1) in which the coil is to be arranged is formed, and the base magnetic layer (19) is formed on the base magnetic layer (19). The insulating layer (7) covering the coil is etched to expose the surface of the magnetic underlayer (19) along the outer periphery of the coil, and then contact the exposed surface of the magnetic underlayer (19). Then, a method for manufacturing a small coil, comprising forming a magnetic shield by depositing a magnetic layer (21) covering the coil. 6. A method of manufacturing a magnetic head of a magnetic device having a magnetic pole (66) made of a magnetic material and a coil, comprising: depositing a magnetic material film (62) on a substrate (61); 62) A small coil (63) according to any one of claims 1 to 3 is formed having an air core part (64) on the magnetic substance film (62). Filling and depositing over the small coil (63), then the small coil (63)
The magnetic substance that covers and is deposited is photo-etched to form the magnetic pole (66) having a predetermined shape, a non-magnetic substance (67) is deposited on the magnetic pole (66), and then the non-magnetic substance (67) is deposited.
A method of manufacturing a magnetic head, characterized in that the curve is provided. 7. An X line (91) comprising a plurality of substantially parallel conductive lines provided on a substrate, and the X line (9).
1) A Y line (92) consisting of a plurality of substantially parallel conductive lines provided so as to intersect with each other through an insulating layer, and the Y line (92) and the Y line (92) at each intersection. The X line (91) and the Y line (92) that intersect at the intersection
The small coil (96) according to any one of claims 1 to 5, wherein a ferromagnetic material provided by connecting both terminals to the core is used as a core, and a semiconductor circuit provided on the substrate, wherein the X line ( 9
1) An X drive circuit (93) that supplies a constant current in both directions by selecting one line, and a semiconductor circuit provided on the substrate, and selects one of the Y lines (92). A Y drive circuit (94) which causes an output current of the X drive circuit (93) to flow through the coil (93) connected to one of the selected Y lines and one of the selected X lines; , A semiconductor circuit provided on the substrate, the X line (91)
And a detection circuit (95) for detecting a voltage fluctuation which varies depending on the magnetization direction of the core of the coil (93) connected to the selected X and Y lines. apparatus.