JPH0554078B2 - - Google Patents
Info
- Publication number
- JPH0554078B2 JPH0554078B2 JP58006955A JP695583A JPH0554078B2 JP H0554078 B2 JPH0554078 B2 JP H0554078B2 JP 58006955 A JP58006955 A JP 58006955A JP 695583 A JP695583 A JP 695583A JP H0554078 B2 JPH0554078 B2 JP H0554078B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- crystal substrate
- cdte single
- type cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
- 229910004613 CdTe Inorganic materials 0.000 claims description 19
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006955A JPS59132382A (ja) | 1983-01-19 | 1983-01-19 | 多チヤンネル形放射線検出器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006955A JPS59132382A (ja) | 1983-01-19 | 1983-01-19 | 多チヤンネル形放射線検出器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132382A JPS59132382A (ja) | 1984-07-30 |
| JPH0554078B2 true JPH0554078B2 (fr) | 1993-08-11 |
Family
ID=11652645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58006955A Granted JPS59132382A (ja) | 1983-01-19 | 1983-01-19 | 多チヤンネル形放射線検出器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132382A (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0734480B2 (ja) * | 1986-07-07 | 1995-04-12 | 株式会社ジャパンエナジー | ＣｄＴｅ放射線検出素子 |
| US6331705B1 (en) | 1997-05-08 | 2001-12-18 | State Of Israel, Atomic Energy Commission | Room temperature solid state gamma or X-ray detectors |
| IL120807A (en) * | 1997-05-08 | 2001-03-19 | Israel Atomic Energy Comm | Method for compensating for the effects of incomplete charge collection and for improving spectroscopic characteristics of room temperature solid state gamma or x-ray detectors |
| WO2000017670A1 (fr) * | 1998-09-24 | 2000-03-30 | Elgems Ltd. | Detecteur photoelectrique pixelise |
| EP1717603A1 (fr) * | 1998-09-24 | 2006-11-02 | Elgems Ltd. | Détecteur de protons pixellisé |
| US7122804B2 (en) * | 2002-02-15 | 2006-10-17 | Varian Medical Systems Technologies, Inc. | X-ray imaging device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4929070A (fr) * | 1972-07-12 | 1974-03-15 | ||
| JPS57149981A (en) * | 1981-03-12 | 1982-09-16 | Yokogawa Hokushin Electric Corp | Multichannel type radiation detector |
-
1983
- 1983-01-19 JP JP58006955A patent/JPS59132382A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4929070A (fr) * | 1972-07-12 | 1974-03-15 | ||
| JPS57149981A (en) * | 1981-03-12 | 1982-09-16 | Yokogawa Hokushin Electric Corp | Multichannel type radiation detector |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132382A (ja) | 1984-07-30 |
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