JPH05508056A - 空間光学変調器 - Google Patents
空間光学変調器Info
- Publication number
- JPH05508056A JPH05508056A JP91511255A JP51125591A JPH05508056A JP H05508056 A JPH05508056 A JP H05508056A JP 91511255 A JP91511255 A JP 91511255A JP 51125591 A JP51125591 A JP 51125591A JP H05508056 A JPH05508056 A JP H05508056A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic material
- modulator
- voltage
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 31
- 230000015654 memory Effects 0.000 claims description 85
- 239000000696 magnetic material Substances 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 34
- 230000010287 polarization Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- 230000000694 effects Effects 0.000 claims description 26
- 230000005374 Kerr effect Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 35
- 230000008569 process Effects 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000005355 Hall effect Effects 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000003491 array Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 240000008067 Cucumis sativus Species 0.000 description 6
- 235000010799 Cucumis sativus var sativus Nutrition 0.000 description 6
- 239000006249 magnetic particle Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- KYAZRUPZRJALEP-UHFFFAOYSA-N bismuth manganese Chemical compound [Mn].[Bi] KYAZRUPZRJALEP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000003915 cell function Effects 0.000 description 1
- 229940090961 chromium dioxide Drugs 0.000 description 1
- IAQWMWUKBQPOIY-UHFFFAOYSA-N chromium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Cr+4] IAQWMWUKBQPOIY-UHFFFAOYSA-N 0.000 description 1
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium(IV) oxide Inorganic materials O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000021251 pulses Nutrition 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005475 siliconizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/005—Arrangements for writing information into, or reading information out from, a digital store with combined beam-and individual cell access
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Optical Recording Or Reproduction (AREA)
- Semiconductor Memories (AREA)
- Details Of Connecting Devices For Male And Female Coupling (AREA)
- Manufacturing Of Electrical Connectors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/535,728 US5107460A (en) | 1990-01-18 | 1990-06-11 | Spatial optical modulator |
| US535,728 | 1990-06-11 | ||
| PCT/US1991/004085 WO1991020084A1 (en) | 1990-06-11 | 1991-06-10 | Spatial optical modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05508056A true JPH05508056A (ja) | 1993-11-11 |
Family
ID=24135521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP91511255A Pending JPH05508056A (ja) | 1990-06-11 | 1991-06-10 | 空間光学変調器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5107460A (https=) |
| JP (1) | JPH05508056A (https=) |
| AU (1) | AU8005091A (https=) |
| DE (1) | DE4191321T (https=) |
| GB (1) | GB2265226B (https=) |
| WO (1) | WO1991020084A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396455A (en) * | 1993-04-30 | 1995-03-07 | International Business Machines Corporation | Magnetic non-volatile random access memory |
| US6307241B1 (en) * | 1995-06-07 | 2001-10-23 | The Regents Of The Unversity Of California | Integrable ferromagnets for high density storage |
| US5926414A (en) * | 1997-04-04 | 1999-07-20 | Magnetic Semiconductors | High-efficiency miniature magnetic integrated circuit structures |
| US6051441A (en) * | 1998-05-12 | 2000-04-18 | Plumeria Investments, Inc. | High-efficiency miniature magnetic integrated circuit structures |
| US6288929B1 (en) | 1999-03-04 | 2001-09-11 | Pageant Technologies, Inc. | Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory |
| US6330183B1 (en) | 1999-03-04 | 2001-12-11 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory |
| US6229729B1 (en) | 1999-03-04 | 2001-05-08 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
| US6266267B1 (en) | 1999-03-04 | 2001-07-24 | Pageant Technologies, Inc. | Single conductor inductive sensor for a non-volatile random access ferromagnetic memory |
| US6317354B1 (en) | 1999-03-04 | 2001-11-13 | Pageant Technologies, Inc. | Non-volatile random access ferromagnetic memory with single collector sensor |
| TWI306153B (en) * | 2002-01-29 | 2009-02-11 | Asahi Chemical Ind | Biosensor, magnetic molecule measurement method, and measurement object measuring method |
| SG115462A1 (en) * | 2002-03-12 | 2005-10-28 | Inst Data Storage | Multi-stage per cell magnetoresistive random access memory |
| US6781763B1 (en) | 2002-04-01 | 2004-08-24 | The United States Of America As Represented By The Secretary Of The Air Force | Image analysis through polarization modulation and combination |
| US20080055268A1 (en) * | 2006-09-01 | 2008-03-06 | Dan-Sik Yoo | Touch screen panel and method for manufacturing the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3988704A (en) * | 1974-04-26 | 1976-10-26 | Mcdonnell Douglas Corporation | Broadband electrooptical modulator |
| US4079429A (en) * | 1977-01-18 | 1978-03-14 | Eastman Kodak Company | Optical detector for magnetic fields employing feedback circuitry |
| DE2911992C2 (de) * | 1979-03-27 | 1981-12-10 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Magnetooptisches Speicherelement, Verfahren zu seiner Herstellung und es verwendende Speichervorrichtung |
| NL8203296A (nl) * | 1982-08-24 | 1984-03-16 | Philips Nv | Magneto-optische inrichting. |
| US4516144A (en) * | 1982-09-23 | 1985-05-07 | Eaton Corporation | Columnated and trimmed magnetically sensitive semiconductor |
| US4727341A (en) * | 1985-06-28 | 1988-02-23 | Nec Corporation | Optical modulator |
| JPS62260120A (ja) * | 1986-05-07 | 1987-11-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体外部光変調器 |
-
1990
- 1990-06-11 US US07/535,728 patent/US5107460A/en not_active Expired - Fee Related
-
1991
- 1991-06-10 JP JP91511255A patent/JPH05508056A/ja active Pending
- 1991-06-10 DE DE19914191321 patent/DE4191321T/de not_active Withdrawn
- 1991-06-10 AU AU80050/91A patent/AU8005091A/en not_active Abandoned
- 1991-06-10 WO PCT/US1991/004085 patent/WO1991020084A1/en not_active Ceased
-
1992
- 1992-12-15 GB GB9226150A patent/GB2265226B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991020084A1 (en) | 1991-12-26 |
| GB2265226B (en) | 1994-09-14 |
| DE4191321T (https=) | 1993-04-01 |
| GB2265226A (en) | 1993-09-22 |
| AU8005091A (en) | 1992-01-07 |
| GB9226150D0 (en) | 1993-04-28 |
| US5107460A (en) | 1992-04-21 |
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