JPH0547989B2 - - Google Patents

Info

Publication number
JPH0547989B2
JPH0547989B2 JP57023239A JP2323982A JPH0547989B2 JP H0547989 B2 JPH0547989 B2 JP H0547989B2 JP 57023239 A JP57023239 A JP 57023239A JP 2323982 A JP2323982 A JP 2323982A JP H0547989 B2 JPH0547989 B2 JP H0547989B2
Authority
JP
Japan
Prior art keywords
photothyristor
pnp transistor
base width
value
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57023239A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58140160A (ja
Inventor
Toshibumi Yoshikawa
Yukinori Nakakura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57023239A priority Critical patent/JPS58140160A/ja
Publication of JPS58140160A publication Critical patent/JPS58140160A/ja
Publication of JPH0547989B2 publication Critical patent/JPH0547989B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
    • H10F30/245—Bipolar phototransistors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP57023239A 1982-02-15 1982-02-15 半導体装置 Granted JPS58140160A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023239A JPS58140160A (ja) 1982-02-15 1982-02-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023239A JPS58140160A (ja) 1982-02-15 1982-02-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS58140160A JPS58140160A (ja) 1983-08-19
JPH0547989B2 true JPH0547989B2 (enrdf_load_stackoverflow) 1993-07-20

Family

ID=12105048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023239A Granted JPS58140160A (ja) 1982-02-15 1982-02-15 半導体装置

Country Status (1)

Country Link
JP (1) JPS58140160A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857748A (ja) * 1981-09-30 1983-04-06 Sharp Corp 半導体装置

Also Published As

Publication number Publication date
JPS58140160A (ja) 1983-08-19

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