JPH0547735A - Cleaning apparatus - Google Patents

Abstract

PURPOSE:To effectively clean by providing a vessel for shielding a light on a part of a member to be processed, in contact with chemicals or ultrapure water to be used for cleaning, and further providing inert gas supply means into the vessel, gas spraying means to a member to be dried, and ultraviolet irradiation means to gas. CONSTITUTION:An apparatus for cleaning or drying a member to be processed, comprises a light shielding vessel 101 having a function of shielding a light in a part of a member 102 to be processed, in contact with chemicals or ultrapure water to be used for cleaning in such a manner that an inner atmosphere can be replaced, further, an inert gas supply unit 104 for supplying inert gas into the vessel 101, a gas injection nozzle 207a for drying a member 209 to be dried by spraying the inert gas toward the member 209, and an ultraviolet irradiation unit 204 for irradiating part of the gas with ultraviolet ray. Thus, impurities on the surface of a semiconductor of the member to be processed can be effectively removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is for cleaning or drying an object to be processed, such as a semiconductor wafer, in a step of performing a cleaning process so as to completely remove adhered substances. Cleaning device.

[0002]

2. Description of the Related Art Conventionally, cleaning of an object to be processed (for example, a semiconductor) has been performed by using the following technique, for example. That is,
Using a combination of sulfuric acid / hydrogen peroxide water mixed solution, hydrochloric acid / hydrogen peroxide water mixed solution, ammonia / hydrogen peroxide water mixed solution, chemical solution such as hydrofluoric acid / hydrogen peroxide solution, and ultrapure water,
Without compromising the atomic level flatness of the semiconductor surface,
This is a technique for removing organic substances, fine particles, metals, and natural oxide films adhering to the semiconductor surface. For example, the steps shown below are used.

(1) Sulfuric acid / hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide = 4: 1, volume ratio) 5 minutes (2) Ultrapure water cleaning 5 minutes (3) Sulfuric acid / hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide) = 4: 1, volume ratio) 5 minutes (4) Ultrapure water cleaning 5 minutes (5) Hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, hydrogen peroxide 10%) 1 minute (6) Ultrapure water cleaning 5 Min (7) Sulfuric acid / hydrogen peroxide cleaning (sulfuric acid: hydrogen peroxide = 4: 1, volume ratio) 5 minutes (8) Ultrapure water cleaning 10 minutes (9) Hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, excess Hydrogen oxide 10%) 1 minute (10) Ultrapure water cleaning 10 minutes (11) Ammonia hydrogen peroxide cleaning (Ammonia water: Hydrogen peroxide: Ultrapure water = 0.05: 1: 5, volume ratio) 10 minutes (12) Ultrapure water cleaning 10 minutes (13) High temperature ultrapure water immersion (about 90 ℃) 10 minutes (14) Hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, hydrogen peroxide 10%) 1 minute (15) Ultrapure water Cleaning 10 minutes (16) Hydrochloric acid hydrogen peroxide cleaning (hydrochloric acid: hydrogen peroxide: ultrapure water (1: 1: 6, volume ratio) 10 minutes (17) High temperature ultrapure water immersion (about 90 ° C) 10 minutes (18) Ultrapure water cleaning 10 minutes (19) Hydrofluoric acid hydrogen peroxide cleaning (hydrofluoric acid 0.5%, Hydrogen peroxide 10%) 1 minute (20) Ultrapure water cleaning 10 minutes (21) Nitrogen gas blow drying 2 minutes Also, the conventional technology for drying semiconductors in the cleaning process is:
The following first to third techniques are known.

The first is a spin dryer, which is constructed so that an object to be dried is instantly rotated at a high speed, and the liquid adhering to the surface of the object to be dried is blown off by centrifugal force to dry the object. It is also possible to blow off the liquid in the very small recesses on the surface of the object to be dried, and to dry the inside of the device by purging with nitrogen, and the natural oxide film on the surface of the object to be dried (eg silicon wafer) during drying. Can be prevented from growing. In addition, by installing an ionizer with a ceramic coating on the electrode inside the device, it is possible to prevent the generation of static electricity due to high-speed rotation of the material to be dried in the equipment, and to prevent the adhesion of fine particles to the material to be dried. It is possible to lose it.

The second is an IPA vapor dryer, which heats IPA (isopropyl alcohol) inside the apparatus,
The IPA vapor is generated, and the liquid (for example, ultrapure water) adhering to the surface of the material to be dried introduced into the apparatus is replaced with IPA having high volatility to dry. Since the IPA vapor can easily enter the very fine recesses on the surface of the material to be dried, it is possible to completely dry the inside of the very fine recesses on the surface of the material to be dried. Also, IPA
Has a function of removing static electricity, and at the same time as removing static electricity on the surface of the object to be dried, it does not generate static electricity, so that it is possible to eliminate the adhesion of fine particles to the surface of the object to be dried.

The third is a non-reactive gas drying device, which supplies a gas (for example, nitrogen gas) that is non-reactive to the material to be dried.
By spraying on the surface of the material to be dried, the liquid on the surface (for example, ultrapure water) is blown off and dried. By setting the amount of water in the gas to an extremely small amount (for example, 1 ppb or less), it is possible to effectively remove the residual adsorbed molecules (for example, water molecules) on the surface of the material to be dried. In addition, it is possible to prevent the natural oxide film from growing on the surface of the object to be dried (for example, a silicon wafer) by shutting off the device from the outside air and making it an inert atmosphere.

[0007]

However, each of the above-mentioned conventional techniques has the following problems.

First, in the conventional semiconductor cleaning technique, all the steps are performed under illumination, or at least in an environment where light shielding is not taken into consideration. It is excited by the energy of the light. At that time, the number of free electrons and holes in the semiconductor increases as compared with the semiconductor in an environment where light is blocked. For example, silicon (for example, boron (B))
When a semiconductor having a p-type region doped with is washed in an environment with light irradiation, electrons excited by light exchange charge with metal ions (having a positive charge) in the washing liquid, and the metal is a semiconductor. Adsorbs on the surface. On the other hand, for example, when a semiconductor having an n-type region in which, for example, phosphorus (P) is added to silicon is washed in an environment with light irradiation, holes excited by light are anions in the washing liquid. Charges are exchanged with (having a negative charge), and anions are adsorbed on the semiconductor surface.

Further, in the conventional semiconductor cleaning technique, at least ultrapure water is not cleaned in an inert gas atmosphere, so that oxygen in the atmosphere is dissolved in the ultrapure water and the surface of the semiconductor that is the object to be processed is dissolved. As a result, the natural oxide film that deteriorates the characteristics of the semiconductor grows on the surface of the semiconductor during the cleaning with ultrapure water. Moreover, when a natural oxide film grows, a metal that is more easily oxidized than a semiconductor such as silicon, for example,
Iron (Fe), Aluminum (Al), Sodium (N
In the case of a) and the like, metal oxides are generated and taken into the natural oxide film, so that the semiconductor surface is metal-contaminated. That is, when semiconductor cleaning is not performed in an inert atmosphere, it causes metal contamination due to the formation of a natural oxide film which itself deteriorates the characteristics of the semiconductor and the incorporation of metal oxides into the natural oxide film.

In the first drying technique, after the liquid (eg, ultrapure water) on the surface of the material to be dried is blown off, liquid molecules (eg, water molecules) are adsorbed and remain.

In the second drying technique, after the liquid (eg, ultrapure water) on the surface of the object to be dried is replaced with IPA vapor and dried, IPA molecules and liquid molecules (eg, water molecules) are adsorbed on the surface of the object to be dried. It remains.

In the third drying technique, the friction between the surface of the object to be dried and the dried gas causes static electricity to be generated on the surface of the object to be dried, and the fine particles are easily adsorbed.

The present invention effectively removes impurities on the surface of a semiconductor when cleaning or drying a semiconductor which is an object to be processed, and impurities on the surface of the semiconductor derived from excitation of electrons or holes by light. To provide a cleaning device that does not cause adhesion, does not cause alteration such as a natural oxide film on the surface of a processed object such as a semiconductor, does not leave any liquid to be dried, does not generate static electricity, and does not adhere to fine particles. The purpose is to

[0014]

A cleaning device of the present invention is a device for cleaning or drying an object to be processed, wherein at least a portion of the object to be processed is exposed to a chemical solution or ultrapure water used for cleaning. A container having a function of shutting off and capable of displacing the internal atmosphere is provided, and further, a means for supplying an inert gas into the container, and the object to be dried by spraying the gas toward the object to be dried. And means for irradiating at least a part of the gas with ultraviolet rays.

[0015]

According to the cleaning apparatus of the present invention, first, in an apparatus for cleaning or drying a processed body such as a semiconductor wafer, at least the portion where the processed body comes into contact with the chemical solution or ultrapure water used for cleaning blocks light. Since it has a function to do so, the semiconductor or the like as the object to be processed is not excited by the energy of light. As a result, electrons or holes (holes) due to light are emitted to the semiconductor surface of the semiconductor to be processed.
It is possible to effectively remove the impurities on the semiconductor surface without causing the adhesion of impurities derived from the excitation of.

Further, the cleaning apparatus of the present invention has a container capable of replacing the internal atmosphere, a function of supplying an inert gas into the container, and a function of supplying ultrapure water with reduced dissolved oxygen. The impurities on the semiconductor surface can be effectively removed without causing deterioration of the surface of the processed body such as a natural oxide film.

Further, the gas, an irradiation means for irradiating the gas with ultraviolet rays (for example, a deuterium lamp capable of irradiating with ultraviolet rays of 185 nm), and a flow path for flowing the gas toward an object to be dried are provided. Since the tube body made of an insulating material is provided, the molecules of the gas are ionized to generate ions. As a result, when the gas is flown toward the object to be dried, the generated ions are jetted to the object to be dried, and static electricity generated by friction between the surface of the object to be dried and the gas is generated by the generated ions. Be harmonized. Therefore, when drying the material to be dried, static electricity is not generated on the surface of the material to be dried.

[0018]

(Embodiment 1) FIG. 1 shows a first embodiment of the present invention.

A cleaning container 103 for cleaning the semiconductor 102 which is the object to be processed is installed inside the light shielding container 101 which can block the light from the outside and replace the internal atmosphere. In the light shielding container 101, an inert gas (for example, nitrogen gas) supply device 104 to the nitrogen gas supply device 10 are provided.
The nitrogen gas 106 is configured to be supplied through the nitrogen gas supply pipe 105 connected to the No. 4.

On the other hand, the cleaning container installed in the light-shielding container is connected to the ultrapure water supply device 107 from the ultrapure water supply device 107 having a function of removing dissolved oxygen in water. The ultrapure water 109 from which dissolved oxygen has been removed is supplied via the water supply pipe 108.

Further, the ultrapure water after cleaning the semiconductor 102 is sent to a waste liquid processing device 112 through a waste liquid receiving container 110 and a waste liquid sending pipe 111 for processing.

The nitrogen gas 106, which has replaced the atmosphere in the light-shielding container, is exhausted through a gas exhaust valve 113 and a gas exhaust pipe 114.

Since this embodiment is configured as described above, when the semiconductor 102, which is the object to be processed, is washed with ultrapure water 109 from which dissolved oxygen has been removed, the semiconductor is exposed to external light. It is not irradiated and therefore the semiconductor 2
Is not excited by the energy of light, and as a result, the semiconductor that is the object to be processed can be cleaned without causing impurities to adhere to the semiconductor surface due to the excitation of electrons or holes by the light. It can be carried out.

Further, since the present embodiment is configured as described above, when the semiconductor 2 which is the object to be cleaned is cleaned with the ultrapure water 109 from which dissolved oxygen is removed, the light shielding container 10 is used.
Oxygen gas is not dissolved in the ultrapure water 109 from the cleaning atmosphere in the semiconductor 1 and therefore the semiconductor 1 which is the object to be processed.
The surface of 02 is not oxidized. As a result, cleaning can be performed without causing deterioration of the natural oxide film or the like on the semiconductor surface.

Table 1 shows the adhesion metal and natural oxide film thickness on the surface of the silicon wafers after cleaning five silicon wafers (n type 100) by using the apparatus shown in FIG. The results are obtained by measuring whether the atmosphere is replaced by gas or not.

The light-shielding container 101 had a volume of 20 l, the flow rate of nitrogen gas supplied to the light-shielding container 101 was 20 l / min, the oxygen concentration in the nitrogen gas was 1 ppb or less, and the water concentration in the nitrogen gas was 1 ppb or less. The volume of the cleaning container 103 is 0.5 l, and the flow rate of ultrapure water supplied to the cleaning container 103 is 3 l.
/ min, dissolved oxygen concentration in ultrapure water was 10 ppb, copper ion (Cu ²⁺ ) concentration in ultrapure water was 1 ppt, and iron ion (Fe ²⁺ ) concentration in ultrapure water was 1 ppt. The cleaning time with ultrapure water was 60 minutes.

[0027]

[Table 1] As shown in Table 1, when a semiconductor, which is a conventional semiconductor cleaning method, has a light irradiation, and the semiconductor is cleaned without replacing the atmosphere for cleaning with an inert gas (for example, nitrogen gas), cleaning is performed. After that, metallic impurities such as copper and iron were detected on the surface of the silicon wafer, and formation of a natural oxide film was also detected. On the other hand, according to the present invention, when the semiconductor is cleaned by blocking the light to the semiconductor as the object to be processed and sufficiently replacing the atmosphere for cleaning with an inert gas (for example, nitrogen), the surface of the silicon wafer after cleaning is Metal impurities such as copper, copper, and iron are not detected, and formation of a natural oxide film is not detected.

Further, even if the light to the semiconductor as the object to be processed is blocked, unless the atmosphere for cleaning is sufficiently replaced with an inert gas (for example, nitrogen), the surface of the silicon wafer after cleaning is naturally It was found that iron, which is more easily oxidized than silicon, adheres as the oxide film grows.

The above results show that, by using the cleaning apparatus of this embodiment, impurities are attached to the semiconductor surface, which is the object to be cleaned, due to the excitation of electrons or holes by light on the semiconductor surface. This indicates that cleaning was possible without causing deterioration of the natural oxide film or the like on the semiconductor surface.

In the present embodiment, the container 101 capable of shielding light was used to shield the object to be processed, but the shielding may be carried out by blocking the light from the entire interior of the room where the cleaning is performed. Alternatively, other light shielding means may be used. Further, although the present embodiment has been described using nitrogen gas, argon gas which is inert to the object to be processed may be used similarly to nitrogen gas, and other inert gas may be used. The effect is obtained. Further, although the present embodiment has been described with respect to the ultrapure water cleaning process as an example, even in the drying process after the ultrapure water cleaning, by drying the cleaned semiconductor in a light-shielding and inert atmosphere, more impurities can be attached. Alternatively, it becomes possible to effectively prevent the formation of the natural oxide film. Of course, also in other steps of semiconductor cleaning, in a light-shielding and inert atmosphere,
By drying the washed semiconductor, it becomes possible to effectively prevent the attachment of impurities or the formation of a natural oxide film.

(Embodiment 2) FIG. 2 shows a second embodiment of the present invention.

A nitrogen gas generator 201 (gas supply means) for vaporizing liquid nitrogen to generate nitrogen gas is connected to a nitrogen gas supply pipe 202a for supplying the generated nitrogen gas.

On the downstream side of the nitrogen gas supply pipe 202a,
Ultraviolet ray generator (for example, deuterium lamp) which is irradiation means
In order to irradiate the nitrogen gas with the ultraviolet rays generated from 03, the ultraviolet ray irradiation section 204 made of synthetic quartz is connected.

An ionized gas supply pipe 205 made of an insulating material (for example, a stainless steel pipe coated with a fluororesin) is connected to the downstream side of the ultraviolet irradiation unit 204.

Further, a gas injection nozzle 207a is connected downstream thereof via a valve 206a. The sprayed gas 208 is sprayed onto the material to be dried 209 facing the gas spray nozzle 207a.

Since this embodiment is configured as described above, the nitrogen gas generated by the nitrogen gas generator 201 is
When the ultraviolet gas is introduced into the ultraviolet irradiation unit 204 through the nitrogen supply pipe 202a and the ultraviolet generator 203 is activated, the nitrogen gas is irradiated with the ultraviolet rays and the nitrogen gas is ionized, so that the nitrogen gas ions are generated in the ultraviolet irradiation unit 204. N ₂ ⁺ and electron e ⁻ are generated.

Further, these generated ions are injected along the gas flow through the ionized gas supply pipe 205, the valve 206a, and the gas injection nozzle 207a, and are sprayed onto the material 209 to be dried. In this case, since the inner surface of the ionized gas supply pipe 205 is coated with an insulating material, nitrogen gas ions N ₂ ⁺ and electrons e ⁻ generated by the irradiation of ultraviolet rays are not erased, and static electricity can be removed from the material 209 to be dried. It works effectively.

Table 2 shows the results of measuring the surface potential of each silicon wafer before and after drying five silicon wafers by using the apparatus shown in FIG. is there.

The silicon wafer is n-type Si (100).
Then, using the one with a diameter of 33 mm, wash with sulfuric acid and hydrogen peroxide,
Immediately after performing pretreatments such as ammonia hydrogen peroxide cleaning, hydrochloric acid hydrogen peroxide cleaning, and hydrofluoric acid hydrogen peroxide cleaning, ultrapure water overflow rinsing was performed for 10 minutes. In the drying device, the silicon wafer as the material to be dried was attached to a wafer fixing jig made of PFA (perfluoroalkoxy resin).

The flow rate of nitrogen gas injected from the gas injection nozzle 207a was 100 << / min, the injection time was 2 minutes, and the distance between the nozzle and the wafer was 50 mm. A high-purity gas having a water content of 1 ppb or less and an oxygen concentration of 1 ppb or less was used in the nitrogen gas used.

The deuterium lamp of 500 W is used as the ultraviolet ray generator 203, and the deuterium lamp and the ultraviolet ray irradiator 204 are used.
The space between was purged with nitrogen gas.

Nitrogen gas flowing into the ultraviolet ray irradiator 204 is exposed to ultraviolet rays (when the ultraviolet ray generator 203 is activated) and when it is not irradiated with ultraviolet rays (when the ultraviolet ray generator 203 is not activated). There is a significant difference in the surface potential of the dried silicon wafer. The measurement was performed using a surface potential meter.

[0043]

[Table 2] That is, as shown in Table 2, in the case of non-irradiation of ultraviolet ray which is a conventional drying method, the surface potential of 4.4-4.9 kV of the silicon wafer measured immediately after cleaning is 5 kV after drying by nitrogen gas injection.
It is increasing above. On the other hand, in the case of ultraviolet irradiation of the present invention, the surface potential of the silicon wafer immediately after cleaning is 4.5-
Although it is 4.9 kV, the surface potential after drying by the nitrogen gas jet irradiated with ultraviolet rays has decreased to 0.031 kV or less. That is, it can be fully understood that the drying by the nitrogen gas injection irradiated with the ultraviolet rays has a high static electricity removing ability and the static electricity is not generated during the drying. Further, in the case of ultraviolet irradiation, when the silicon wafer is dried, the moisture on the material to be dried is completely removed, and other impurity molecules are not adsorbed.

The above results show that, by using the drying apparatus of this embodiment, it is possible to leave no liquid to be dried on the material to be dried and to attach any deposit other than the liquid to be dried. It means that it is possible to dry without preventing the generation of static electricity.

In this embodiment, nitrogen gas was used as the predetermined gas supplied from the gas supply means, but argon gas, which is non-reactive with the material to be dried 209, like nitrogen gas, may also be used. Good, and the same effect can be obtained by using other gases. Further, in this embodiment, the case where the gas flow rate is set to 100 l / min has been described, but other flow rate conditions may be used. However, considering the drying efficiency, 5
It is preferable to dry at about 0-150 l / min. The purity of the gas used is preferably 1 ppm or less for water content and 10 ppm or less for oxygen concentration.

Further, in the present invention, both positive and negative ions are generated by ionizing the gas, so that the substance to be dried is
It is also effective in removing static electricity even with a negative surface potential such as a PFA jig. Further, in the present embodiment, the case where a deuterium lamp is used as the ultraviolet ray generator 203 has been described, but any substance that generates light having energy for ionizing the gas used may be used, for example, a low pressure mercury lamp or the like. It has the same effect.

In the above embodiments, the gas to be supplied is described as being at room temperature, but the gas to be supplied is heated (for example, 200 ° C.) by using the first heating means, for example, the one by the electric heating method. By doing so, the drying efficiency may be increased. Similarly, the material to be dried may be heated using the second heating means, for example, by heating with infrared rays or the like to improve the drying efficiency.

FIG. 3 shows a third embodiment of the present invention.

In this embodiment, in the second embodiment,
The nitrogen gas supply pipe 202a is configured so that it can be directly sprayed onto the material to be dried 209 via an injection nozzle 207b branched at an upstream portion of the ultraviolet irradiation unit 204. The other structure is the same as that of the second embodiment, and the duplicated description will be omitted.

Since this embodiment is configured as described above, a large amount of gas is ejected from the injection nozzle 207b to the wafer 20.
9 to perform the main drying, and the static electricity of the wafer 209 can be removed by using the nozzle 207a as needed or as an auxiliary.

Further, since the generated ions are sprayed onto the material to be dried 9, it is possible to perform the drying while preventing the generation of static electricity on the material to be dried 209 as in the second embodiment.

Table 3 shows the results of measuring the surface potential of the silicon wafer when the silicon wafer was dried in the apparatus shown in FIG.

The silicon wafer used was of the same type as that of the second embodiment and subjected to the same pretreatment and the same ultrapure water overflow phosphorous. Further, the silicon wafer as the material to be dried was attached to the wafer fixing jig made of PFA as in the second embodiment. The flow rate of nitrogen gas injected from the gas injection nozzle 207a is 10 l / min, and the injection time is 2
The distance between the nozzle and the wafer was 50 mm. The flow rate of nitrogen gas injected from the other gas injection nozzle 207b was 90 l / min, the injection time was 2 minutes, and the distance between the nozzle and the wafer was 50 mm.

A 500 w deuterium lamp is used as the ultraviolet ray generator 203. The deuterium lamp and the ultraviolet ray irradiator 204 are used.
The space between was purged with nitrogen gas. A high-purity gas having a water content of 1 ppb or less and an oxygen concentration of 1 ppb or less was used in the nitrogen gas used.

[0055]

[Table 3] As shown in Table 3, the surface potential of the silicon wafer measured immediately after cleaning is 4.5-4.9kV in the case of non-irradiation, which is the conventional drying method, but it is 5kV or more after drying by nitrogen gas injection. Is increasing. On the other hand, in the case of the ultraviolet irradiation of the present invention, the surface potential of the silicon wafer measured immediately after cleaning is 4.5-4.8 kV, but it has decreased to 0.028 kV or less after the drying by the nitrogen gas injection irradiated with the ultraviolet rays. .. That is, similarly to the second embodiment, the drying according to the second embodiment has a high static electricity removal capability, does not generate static electricity during drying, completely removes moisture on the material to be dried, and does not adsorb other impurity molecules. Can be realized.

From the above results, as in the case of the second embodiment, the present embodiment also has the effect that it is possible to dry while removing static electricity without leaving a dry liquid or adhering matter on the material to be dried. ..

FIG. 4 shows a fourth embodiment of the present invention.

In this embodiment, the nitrogen gas supply pipe 202a in the second embodiment is branched at the upstream portion of the ultraviolet irradiation section 204, and the branch pipe 202c is connected to the ionized gas supply pipe 205 to join them. ing. The other structure is similar to that of the second embodiment.

Since this embodiment is constructed as described above, like the third embodiment, it is divided into a gas that contributes to static electricity removal and a gas that mainly contributes to drying, while both gases join together. This enables more efficient static electricity removal and drying.

Table 4 shows the results of measuring the surface potential of the silicon wafer when the silicon wafer was dried in the apparatus shown in FIG.

In this embodiment, the flow rate of nitrogen gas flowing into the ultraviolet irradiation section 204 is 10 l / min, and the nitrogen gas supply pipe 20
The other nitrogen gas supply pipe 202c branched from 2a
The flow rate of nitrogen gas to be merged with the ionized gas supply pipe 205 via the via was 90 l / min. Therefore, the flow rate of nitrogen gas injected from the gas injection nozzle 207a is 100 l / m.
In, the ejection time was 2 minutes, and the distance between the nozzle and the wafer was 50 mm.

[0062]

[Table 4]

[0063]

As described above, according to the invention of claim 1, in an apparatus for cleaning or drying an object to be processed, at least the object to be processed is a chemical solution or ultrapure water used for cleaning. Since the contact part has a function of blocking light, the object to be processed is not excited by the energy of light, and as a result, the object to be processed is It is possible to obtain a cleaning apparatus capable of effectively removing impurities on the surface of the object to be processed without causing impurities to be attached to the surface of the object to be processed due to excitation of electrons or holes due to light.

Further, a container capable of replacing the internal atmosphere,
Since it has a function of supplying an inert gas into the container, it is possible to effectively remove impurities on the surface of the object to be processed without causing alteration such as a natural oxide film on the surface of the object to be processed. Is obtained.

Moreover, since the means for spraying the object to be dried with the gas and the drying means and the irradiation means for irradiating at least a part of the gas with the ultraviolet rays are provided, the liquid to be dried is applied to the object to be dried. It is possible to obtain a cleaning device capable of providing a drying device that does not leave any residue, does not cause alteration such as natural oxide film growth on the surface of the object to be dried, does not generate static electricity, and is free of particulate adhesion.

According to the second aspect of the present invention, since the means for supplying the ultrapure water in which the dissolved oxygen is reduced is provided, the deteriorated layer such as the oxide film can be further reduced and the surface can be cleaned.

According to the invention of claim 3, at least the object to be treated is placed in the container capable of replacing the internal atmosphere.
Since the part in contact with the chemical solution or ultrapure water used for cleaning is installed, a cleaning device that can effectively remove impurities on the surface of the object to be processed without causing deterioration of the surface of the object to be processed, such as a natural oxide film. It is more effective to obtain.

According to the invention of claim 4, at least the part for final cleaning of the object to be treated with ultrapure water and drying of the attached ultrapure water is provided in the container capable of replacing the internal atmosphere. It is more effective to obtain a cleaning device capable of effectively removing impurities on the surface of the object to be processed without causing deterioration of the surface of the object to be processed such as a natural oxide film.

According to the invention of claim 5, at least at least a part of the gas is directed to the object to be dried through a tube body having at least an inner surface formed of an insulating material. The ionized gas can be efficiently sprayed toward the material to be dried.

According to the sixth aspect of the present invention, since nitrogen gas, which is a highly pure gas that is easily available, is used as the gas, an increase in cost can be avoided.

According to the invention of claim 7, since the gas is an argon gas which is easily ionized, it is effective because it is inert to all the materials to be dried.

According to the invention of claim 8, the gas has an oxygen concentration of 10 ppm or less and a water concentration of 1 ppm.
Since the gas whose content is less than or equal to ppm is used, the irradiated ultraviolet rays are not used in the ozone ozone generation reaction of oxygen, and the drying efficiency of the material to be dried is increased, which is more preferable.

According to the ninth aspect of the invention, since the ultraviolet rays are irradiated through the transparent member made of synthetic quartz having a high ultraviolet ray transmittance to the gas, the ultraviolet rays generated from the ultraviolet ray generating portion are effective. Is irradiated with the predetermined gas,
It is more preferable because the gas is efficiently ionized.

According to the tenth aspect of the invention, since the light to be shielded has a function of shielding light having an energy of 1.1 eV or more, the energy to be processed by the object to be processed is Is not excited, and as a result, the target object to be processed can be processed without causing impurities to adhere to the surface of the target object due to the excitation of electrons or holes by light. It is effective to obtain a cleaning device capable of effectively removing impurities on the body surface.

The invention according to claim 11 is more effective because the light to be blocked has a function of blocking light having energy of 3.4 eV or more. According to the invention of claim 12, the light to be cut off is 6.2.
It is more effective because it has a function of blocking light having energy of eV or more.

According to the thirteenth aspect of the invention, since the predetermined gas is provided with the first heating means, the drying efficiency is high when the gas flows toward the object to be dried, which is more preferable. Is.

According to the fourteenth aspect of the invention, since the material to be dried is provided with the second heating means, the drying efficiency is high when the gas flows toward the material to be dried, which is more preferable. Is.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a cleaning device according to a first embodiment.

FIG. 2 is a schematic configuration diagram of a cleaning device according to a second embodiment.

FIG. 3 is a schematic configuration diagram of a cleaning device according to a third embodiment.

FIG. 4 is a schematic configuration diagram of a cleaning device according to a fourth embodiment.

[Explanation of symbols]

 101 light-shielding container, 102 semiconductor, 103 cleaning container, 104 inert gas supply device, 105 inert gas supply pipe, 106 inert gas, 107 ultrapure water supply device (having dissolved oxygen removal function), 108 ultrapure water supply Pipes, 109 ultrapure water, 110 waste liquid receiving container, 111 waste liquid sending pipe, 112 waste liquid processing device, 113 gas exhaust valve, 114 gas exhaust pipe, 201 gas generator, 202a gas supply pipe, 202b gas supply pipe, 202c gas Supply pipe, 203 Ultraviolet generator, 204 Ultraviolet irradiation part, 205 Ionized gas supply pipe, 206a valve, 206b valve, 207a gas injection nozzle, 207b gas injection nozzle, 208 injection gas (including ions), 209 dried object, 210 Jet gas (not including ions) 211 jets Gas (including ions).

Claims (14)

[Claims] 1. In an apparatus for cleaning or drying an object to be processed, at least a part of the object to be processed that comes into contact with a chemical solution or ultrapure water used for cleaning has a function of blocking light and replaces an internal atmosphere. And a means for supplying an inert gas into the container, a means for drying the material to be dried by spraying the gas toward the material to be dried, and at least one of the gases. A cleaning device, characterized in that an irradiating means for irradiating the portion with ultraviolet rays is provided. 2. The cleaning apparatus according to claim 1, further comprising means for supplying ultrapure water in which dissolved oxygen is reduced. 3. A container capable of replacing the internal atmosphere,
3. The cleaning apparatus according to claim 1, wherein at least a portion of the object to be treated is in contact with a chemical solution or ultrapure water used for cleaning. 4. A container capable of replacing the internal atmosphere,
The cleaning apparatus according to any one of claims 1 to 3, wherein at least a portion for subjecting the object to be processed to final cleaning with ultrapure water and drying of the attached ultrapure water is installed. 5. The gas according to claim 1, wherein at least a part of the gas is directed to the object to be dried through a tube body having at least an inner surface made of an insulating material. The cleaning device according to. 6. The cleaning apparatus according to any one of claims 1 to 5, wherein the gas is nitrogen. 7. The cleaning apparatus according to any one of claims 1 to 6, wherein the inert gas is argon. 8. The method according to claim 1, wherein the oxygen concentration in the gas is 10 ppm or less, the water concentration is 1 ppm or less, and the dissolved oxygen in the ultrapure water in which the dissolved oxygen is reduced is 50 ppb or less. Item 9. The cleaning device according to any one of items 7. 9. The cleaning apparatus according to claim 1, wherein the light to be blocked has a function of blocking light having an energy of 1.1 eV or more. 10. The cleaning device according to claim 1, wherein the light to be blocked has a function of blocking light having an energy of 3.4 eV or more. 11. The cleaning apparatus according to claim 1, wherein the blocking light has a function of blocking light having energy of 6.2 eV or more. 12. The irradiation means irradiates the gas with the ultraviolet rays through a light-transmitting member made of synthetic quartz.
The cleaning device according to the item. 13. The cleaning apparatus according to claim 1, wherein the gas includes a first heating unit. 14. The cleaning apparatus according to claim 1, wherein the article to be dried is provided with a second heating unit.