JPH0544769B2 - - Google Patents
Info
- Publication number
- JPH0544769B2 JPH0544769B2 JP22526486A JP22526486A JPH0544769B2 JP H0544769 B2 JPH0544769 B2 JP H0544769B2 JP 22526486 A JP22526486 A JP 22526486A JP 22526486 A JP22526486 A JP 22526486A JP H0544769 B2 JPH0544769 B2 JP H0544769B2
- Authority
- JP
- Japan
- Prior art keywords
- microwave
- generation chamber
- plasma generation
- ion
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000605 extraction Methods 0.000 claims description 10
- 229910021645 metal ion Inorganic materials 0.000 claims description 10
- 238000005477 sputtering target Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 26
- 239000007789 gas Substances 0.000 description 14
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22526486A JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22526486A JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6380449A JPS6380449A (ja) | 1988-04-11 |
| JPH0544769B2 true JPH0544769B2 (zh) | 1993-07-07 |
Family
ID=16826590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22526486A Granted JPS6380449A (ja) | 1986-09-24 | 1986-09-24 | マイクロ波金属イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6380449A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2805009B2 (ja) * | 1988-05-11 | 1998-09-30 | 株式会社日立製作所 | プラズマ発生装置及びプラズマ元素分析装置 |
| JP2787006B2 (ja) * | 1995-05-10 | 1998-08-13 | 株式会社日立製作所 | 加工方法及び加工装置並びにプラズマ光源 |
| CN112176406B (zh) * | 2020-09-16 | 2021-06-25 | 北京清碳科技有限公司 | 一种单晶金刚石生长设备 |
-
1986
- 1986-09-24 JP JP22526486A patent/JPS6380449A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6380449A (ja) | 1988-04-11 |
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