JPH0544042A - Cvd reactor - Google Patents
Cvd reactorInfo
- Publication number
- JPH0544042A JPH0544042A JP22226891A JP22226891A JPH0544042A JP H0544042 A JPH0544042 A JP H0544042A JP 22226891 A JP22226891 A JP 22226891A JP 22226891 A JP22226891 A JP 22226891A JP H0544042 A JPH0544042 A JP H0544042A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- raw material
- substrate
- long
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、基板上に化学気相蒸
着法（ＣＶＤ法）を用いて被膜層を形成させる際に用い
られるＣＶＤ反応装置に係わり、更に詳しくは、超電導
マグネットコイルや電力輸送用などとして応用開発が進
められている長尺の酸化物超電導体をＣＶＤ法を用いて
製造する場合に使用されるＣＶＤ反応装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD reactor used when a coating layer is formed on a substrate by a chemical vapor deposition method (CVD method). More specifically, the present invention relates to a superconducting magnet coil and electric power. The present invention relates to a CVD reactor used when a long oxide superconductor, which is being applied and developed for transportation, is manufactured by the CVD method.
【０００２】[0002]
【従来の技術】従来、長尺の酸化物超電導体をＣＶＤ法
を用いて製造する場合、例えば図２に示すような縦型の
反応チャンバを用いたＣＶＤ反応装置が用いられてい
る。このＣＶＤ反応装置１は、縦長型の反応チャンバ
２、原料ガス供給装置３、排気ポンプ４、基板ヒータ
５、基板移送装置６を主要構成要素として構成されてい
る。2. Description of the Related Art Conventionally, when a long oxide superconductor is manufactured by a CVD method, for example, a CVD reactor using a vertical reaction chamber as shown in FIG. 2 is used. The CVD reaction apparatus 1 mainly includes a vertically long reaction chamber 2, a raw material gas supply device 3, an exhaust pump 4, a substrate heater 5, and a substrate transfer device 6.
【０００３】上記反応チャンバ２の上方には原料ガス供
給口７が形成され、かつこの原料ガス供給口７は、原料
ガス供給管８を通じて上記原料ガス供給装置３と接続さ
れている。また、上記反応チャンバ２の下方側にはガス
排出口９が形成され、かつこのガス排出口９はガス排出
管１０を通じて排気ポンプ４と接続されている。A source gas supply port 7 is formed above the reaction chamber 2, and the source gas supply port 7 is connected to the source gas supply device 3 through a source gas supply pipe 8. A gas exhaust port 9 is formed on the lower side of the reaction chamber 2, and the gas exhaust port 9 is connected to the exhaust pump 4 through a gas exhaust pipe 10.
【０００４】また、上記反応チャンバ２内部の長尺基板
１１は基板移送装置６により図中の矢印方向に移動され
て送入されるようになっている。また、さらに上記チャ
ンバ２内の下部には基板ヒータ５が設けられ、上記反応
チャンバ２内に送入される長尺基板１１を加熱できるよ
うになっている。Further, the long substrate 11 inside the reaction chamber 2 is moved by the substrate transfer device 6 in the direction of the arrow in the figure and fed. Further, a substrate heater 5 is provided in the lower portion of the chamber 2 so that the long substrate 11 fed into the reaction chamber 2 can be heated.
【０００５】上記従来のＣＶＤ反応装置１を用いて長尺
の酸化物超電導体（以下、ＳＣ体と略記する。）を作製
するには、基板移送装置６によって反応チャンバ２内に
長尺基板１１を送入し、さらに原料ガス供給管８を介し
て原料ガス供給装置３からチャンバ２内に原料ガスを導
入するとともに、反応チャンバ２内を所定の原料ガス雰
囲気とする。しかる後、直ちに基板ヒータ６で上記チャ
ンバ２内の長尺基板１１を加熱してこの長尺基板１１表
面に酸化物超電導層（以下、ＳＣ層と略記する。）を蒸
着させ、これによりＳＣ体を作製する。また、上述した
ような従来のＣＶＤ反応装置１は、ＣＶＤ反応領域Ａが
狭いため、このＣＶＤ反応領域Ａ近傍の原料ガス雰囲気
を均一に維持し易く、従って、安定な組成のＳＣ層を形
成することができる。In order to produce a long oxide superconductor (hereinafter abbreviated as SC body) using the above-mentioned conventional CVD reaction apparatus 1, the long substrate 11 is placed in the reaction chamber 2 by the substrate transfer apparatus 6. And the raw material gas is introduced into the chamber 2 from the raw material gas supply device 3 through the raw material gas supply pipe 8 and the reaction chamber 2 is made into a predetermined raw material gas atmosphere. Then, immediately, the long substrate 11 in the chamber 2 is heated by the substrate heater 6 to deposit an oxide superconducting layer (hereinafter abbreviated as SC layer) on the surface of the long substrate 11, thereby forming an SC body. To make. Further, in the conventional CVD reaction apparatus 1 as described above, since the CVD reaction region A is narrow, it is easy to uniformly maintain the source gas atmosphere in the vicinity of the CVD reaction region A, and thus the SC layer having a stable composition is formed. be able to.
【０００６】一方、別のＣＶＤ反応装置としては、図３
に示されるような横長型の反応チャンバを用いたＣＶＤ
反応装置が用いられている。このＣＶＤ反応装置２１
は、横長型の反応チャンバ２２、原料ガス供給装置２
３、排気ポンプ２４、基板ヒータ２５、基板移送装置２
６を主要構成要素として構成されている。On the other hand, another CVD reactor is shown in FIG.
Using a horizontally long reaction chamber as shown in FIG.
A reactor is used. This CVD reactor 21
Is a horizontally long reaction chamber 22 and a source gas supply device 2
3, exhaust pump 24, substrate heater 25, substrate transfer device 2
6 is a main component.
【０００７】上記反応チャンバ２２の下方側の一端には
原料ガス供給口２７が形成され、かつこの原料ガス供給
口２７は、原料ガス供給管２８を通じて上記原料ガス供
給装置２３と接続されている。また、上記反応チャンバ
２２の下方側の他端にはガス排出口２９が形成され、か
つこのガス排出口２９はガス排出管３０を通じて排気ポ
ンプ２４と接続されている。A raw material gas supply port 27 is formed at one end on the lower side of the reaction chamber 22, and the raw material gas supply port 27 is connected to the raw material gas supply device 23 through a raw material gas supply pipe 28. A gas exhaust port 29 is formed at the other end of the reaction chamber 22 on the lower side, and the gas exhaust port 29 is connected to an exhaust pump 24 through a gas exhaust pipe 30.
【０００８】また、上記反応チャンバ２２内の長尺基板
３１は、基板移送装置２６により図中の矢印方向に移動
され、送入されるようになっている。また、さらに上記
チャンバ２２内の下部には基板ヒータ２５が設けられ、
反応チャンバ２２内に送入される長尺基板３１を加熱で
きるようになっている。The long substrate 31 in the reaction chamber 22 is moved by the substrate transfer device 26 in the direction of the arrow in FIG. Further, a substrate heater 25 is provided in the lower portion of the chamber 22,
The long substrate 31 fed into the reaction chamber 22 can be heated.
【０００９】上記従来のＣＶＤ反応装置２１を用いて長
尺のＳＣ体を作製するには、基板移送装置２６によって
反応チャンバ２２内に長尺基板３１を送入し、さらに原
料ガス供給管２８を介して原料ガス供給装置２３からチ
ャンバ２２内に原料ガスを導入するとともに、反応チャ
ンバ２２内を所定の原料ガス雰囲気とする。しかる後、
直ちに基板ヒータ２６で上記チャンバ２２内の長尺基板
３１を加熱してこの長尺基板３１表面にＳＣ層を蒸着さ
せ、これによりＳＣ体を作製する。また、上述したよう
な従来のＣＶＤ反応装置２１は、ＣＶＤ反応領域Ａが広
いので、長尺の基板上に化学反応せしめてＳＣ層を生成
させる際の効率が極めて良好であり、従って、効率的に
長尺ＳＣ体を作製できる。In order to manufacture a long SC body using the above-mentioned conventional CVD reaction device 21, a long substrate 31 is fed into the reaction chamber 22 by the substrate transfer device 26, and the source gas supply pipe 28 is further connected. A raw material gas is introduced from the raw material gas supply device 23 into the chamber 22 via the raw material gas supply device 23, and the inside of the reaction chamber 22 is set to a predetermined raw material gas atmosphere. After that,
Immediately, the substrate heater 26 heats the long substrate 31 in the chamber 22 to deposit an SC layer on the surface of the long substrate 31, thereby producing an SC body. Further, in the conventional CVD reaction apparatus 21 as described above, since the CVD reaction region A is wide, the efficiency of chemically reacting on the long substrate to generate the SC layer is extremely good, and therefore, the efficiency is high. A long SC body can be manufactured.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、上記従
来のＣＶＤ反応装置の内、前者の縦型の反応チャンバ２
を用いたＣＶＤ反応装置１にあっては、ＣＶＤ反応領域
Ａが狭いので、長尺基板上に化学反応せしめてＳＣ層を
生成させる際の効率が極めて低いものとなり、従って、
長尺ＳＣ体を作製する際の、生産効率も低くなってしま
うという問題があった。However, the former vertical reaction chamber 2 in the conventional CVD reaction apparatus described above is used.
In the CVD reaction apparatus 1 using, since the CVD reaction region A is narrow, the efficiency in chemically reacting on the long substrate to generate the SC layer is extremely low, and therefore,
There was a problem that the production efficiency was low when producing a long SC body.
【００１１】また、後者の横長型の反応チャンバ２２を
用いたＣＶＤ反応装置２１にあっては、ＣＶＤ反応領域
Ａが広いので、このＣＶＤ反応領域Ａ近傍の原料ガス雰
囲気を均一な組成に維持することが難しく、従って、均
一かつ安定な組成のＳＣ層を形成するのも困難であると
いう問題があった。Further, in the latter CVD reaction apparatus 21 using the horizontally long reaction chamber 22, since the CVD reaction region A is wide, the source gas atmosphere in the vicinity of the CVD reaction region A is maintained to have a uniform composition. Therefore, there is a problem that it is difficult to form an SC layer having a uniform and stable composition.
【００１２】本発明は、上記事情に鑑みなされたもの
で、長尺基板上に均一かつ安定な組成のＣＶＤ蒸着層を
効率的に形成することができるＣＶＤ反応装置の提供を
目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a CVD reaction apparatus capable of efficiently forming a CVD vapor deposition layer having a uniform and stable composition on a long substrate.
【００１３】[0013]
【課題を解決するための手段】上記課題は、原料化合物
ガス等の原料ガスを化学反応せしめて基体表面に生成物
を堆積させるＣＶＤ反応を行う横長型の反応チャンバ
と、該反応チャンバ内に原料ガスを供給する原料ガス供
給手段と、該反応チャンバ内のガスを排気するガス排気
手段と、長尺の基体を反応チャンバの長手方向に沿って
一方側に移動させる基板移動手段と、該反応チャンバ内
に配設された横長型の加熱手段とを備えたＣＶＤ反応装
置において、上記反応チャンバの上部には、上方に向け
てすぼまりかつその頂部に原料ガス供給手段が接続され
た原料ガス拡散部が形成され、該反応チャンバの下方側
の長手方向両端部には、前記ガス排気手段に接続される
排気口が設けられてなり、前記原料ガス供給手段から供
給された原料ガスを、該原料ガス拡散部で均一に拡散さ
せて該反応チャンバ内の長尺基体近傍に到達せしめ、反
応残ガスを該反応チャンバの下方側の長手方向両端部に
設けられた排気口を経て排気せしめる構成とすることに
より解決される。Means for Solving the Problems The above problem is to provide a horizontally elongated reaction chamber for performing a CVD reaction in which a source gas such as a source compound gas is chemically reacted to deposit a product on the surface of a substrate, and a source material in the reaction chamber. Raw material gas supply means for supplying gas, gas exhaust means for exhausting gas in the reaction chamber, substrate moving means for moving a long substrate to one side along the longitudinal direction of the reaction chamber, and the reaction chamber In a CVD reactor provided with a horizontally-long heating means disposed inside, a source gas diffusion in which an upper portion of the reaction chamber is narrowed upward and a source gas supply means is connected to the top thereof. Part is formed, and an exhaust port connected to the gas exhaust means is provided at both ends in the longitudinal direction on the lower side of the reaction chamber, and the source gas supplied from the source gas supply means is supplied to the exhaust port. A structure in which the raw material gas is uniformly diffused to reach the vicinity of the long substrate in the reaction chamber, and the reaction residual gas is exhausted through exhaust ports provided at both ends in the longitudinal direction below the reaction chamber. Will be solved.
【００１４】[0014]
【作用】以上述べたように、本発明のＣＶＤ反応装置に
あっては、反応チャンバの上部に、上方に向けてすぼま
りかつその頂部に原料ガス供給手段が接続された原料ガ
ス拡散部を形成し、該反応チャンバの下方側の長手方向
両端部に、前記ガス排気手段に接続される排気口を設け
た構成としたので、前記原料ガス供給手段から供給され
た原料ガスは、該原料ガス拡散部で均一に拡散されて該
反応チャンバ内の長尺基体近傍に到達し、反応残ガスは
該反応チャンバの下方側の長手方向両端部に設けられた
排気口を経て排気される。従って、上記反応チャンバ内
の長尺基体のＣＶＤ反応領域近傍では、原料ガス雰囲気
が均一となる。As described above, in the CVD reaction apparatus of the present invention, the raw material gas diffusion portion which is narrowed upward and has the raw material gas supply means connected to the top thereof is provided in the upper part of the reaction chamber. The raw material gas supplied from the raw material gas supply means is the raw material gas supplied to the raw material gas supply means. After being uniformly diffused in the diffusion portion and reaching the vicinity of the long substrate in the reaction chamber, the residual reaction gas is exhausted through exhaust ports provided at both ends in the longitudinal direction on the lower side of the reaction chamber. Therefore, the source gas atmosphere becomes uniform in the vicinity of the CVD reaction region of the long substrate in the reaction chamber.
【００１５】以下、例を挙げて本発明を詳細に説明す
る。図１は、本発明のＣＶＤ反応装置の一例を示すもの
であり、図中符号４１はＣＶＤ反応装置である。このＣ
ＶＤ反応装置４１は、横長型の反応チャンバ４２、原料
ガス供給装置４３、排気ポンプ４４、基板ヒータ４５、
基板移送装置４６を主要構成要素として構成されてい
る。The present invention will be described in detail below with reference to examples. FIG. 1 shows an example of a CVD reaction apparatus according to the present invention. In the figure, reference numeral 41 is a CVD reaction apparatus. This C
The VD reaction device 41 includes a horizontally long reaction chamber 42, a source gas supply device 43, an exhaust pump 44, a substrate heater 45,
The substrate transfer device 46 is configured as a main component.
【００１６】上記反応チャンバ４２の上部には、上方に
向けてすぼまりかつその頂部に原料ガス供給手段４３が
接続された原料ガス拡散部４７が形成されている。一
方、上記反応チャンバ４２の下方側には２つのガス排出
口４８，４８が形成され、かつこれら２つのガス排出口
４８，４８はガス排出管４９を通して排気ポンプ４４に
接続されている。At the upper part of the reaction chamber 42, there is formed a raw material gas diffusion portion 47 which is narrowed upward and has a raw material gas supply means 43 connected to the top thereof. On the other hand, two gas outlets 48, 48 are formed below the reaction chamber 42, and these two gas outlets 48, 48 are connected to an exhaust pump 44 through a gas exhaust pipe 49.
【００１７】また、上記反応チャンバ４２内の長尺基板
５０は、基板移送装置４６により図中の矢印方向に移動
され、送入されるようになっている。また、さらに上記
チャンバ４２内の下部には基板ヒータ４５が設けられ、
上記反応チャンバ４２内に送入される長尺基板５０を加
熱できるようになっている。The long substrate 50 in the reaction chamber 42 is moved by the substrate transfer device 46 in the direction of the arrow in FIG. Further, a substrate heater 45 is provided in the lower portion of the chamber 42,
The long substrate 50 fed into the reaction chamber 42 can be heated.
【００１８】なお、本例では、基板の加熱手段として抵
抗加熱方式の基板ヒータを用いているが、上記加熱手段
は抵抗加熱方式に限定されることなく、例えば誘導加
熱、プラズマ、光（レーザ、ＵＶなど）等を用いても良
い。In this example, a resistance heating type substrate heater is used as the substrate heating means, but the heating means is not limited to the resistance heating type, and for example, induction heating, plasma, light (laser, laser, UV etc.) may be used.
【００１９】本例のＣＶＤ反応装置４１にあっては、上
記したように反応チャンバ４２の上部に、上方に向けて
すぼまりかつその頂部に原料ガス供給手段４３が接続さ
れた原料ガス拡散部４７を形成し、上記反応チャンバ４
２の下方側の長手方向両端部に、前記排気ポンプ４４に
接続されるガス排出口４８，４８を設けた構成としたの
で、この装置を用いてＣＶＤ反応を行う際、原料ガス供
給装置４３から原料ガスは、原料ガス拡散部４７で均一
に拡散されて反応チャンバ４２内の長尺基板５０近傍に
到達し、反応残ガスは反応チャンバ４２の下方側の長手
方向両端部に設けられたガス排出口４８，４８を経て排
気される。従って、上記反応チャンバ４２内の長尺基板
５０のＣＶＤ反応領域近傍では、原料ガス雰囲気が均一
となる。In the CVD reaction apparatus 41 of this embodiment, as described above, the raw material gas diffusion section is formed in which the raw material gas supply means 43 is connected to the upper portion of the reaction chamber 42, which is narrowed upward. 47 to form the reaction chamber 4
Since gas exhaust ports 48, 48 connected to the exhaust pump 44 are provided at both longitudinal ends on the lower side of 2, when the CVD reaction is performed using this device, the raw material gas supply device 43 The raw material gas is uniformly diffused in the raw material gas diffusing section 47 and reaches the vicinity of the long substrate 50 in the reaction chamber 42, and the reaction residual gas is exhausted from the gas exhaust gas provided at both ends in the longitudinal direction on the lower side of the reaction chamber 42. The air is exhausted through the outlets 48, 48. Therefore, the source gas atmosphere becomes uniform in the vicinity of the CVD reaction region of the long substrate 50 in the reaction chamber 42.
【００２０】また、本例のＣＶＤ反応装置４１にあって
は、横長型の反応チャンバ４２を用いているため、その
ＣＶＤ反応領域も広くなる。従って、長尺の基板上に原
料層を蒸着する際、長尺の基板上に化学反応せしめて原
料層を生成させる際の効率が極めて良好となる。Further, in the CVD reaction apparatus 41 of this example, since the horizontally long reaction chamber 42 is used, the CVD reaction region thereof is widened. Therefore, when the raw material layer is vapor-deposited on the long substrate, the efficiency of the chemical reaction on the long substrate to generate the raw material layer becomes extremely good.
【００２１】次に、上記本例のＣＶＤ反応装置４１を用
いた長尺のＳＣ体の一製造例をについて述べる。まず、
基板移送装置４６によって反応チャンバ４２内に長尺基
板５０を送入し、さらに原料ガス供給装置４３から反応
チャンバ４２内に、原料ガス拡散部４７を介してＳＣ体
原料ガスを導入するとともに、排気ポンプ４４により反
応チャンバ４２の下方側の２つのガス排出口４８，４８
から反応チャンバ４２内の反応残ガスを排気する。この
時、原料ガス供給装置４３から原料ガス拡散部４７内に
送り込まれたＳＣ体原料ガスは、図中の矢印で示される
ように拡散される。上記一連の操作により反応チャンバ
４２内の長尺基板５０のＣＶＤ反応領域近傍では、所定
の均一なＳＣ体原料ガス雰囲気となる。Next, an example of manufacturing a long SC body using the CVD reactor 41 of the present embodiment will be described. First,
The long substrate 50 is fed into the reaction chamber 42 by the substrate transfer device 46, and further, the SC body raw material gas is introduced from the raw material gas supply device 43 into the reaction chamber 42 through the raw material gas diffusing section 47 and is exhausted. Two gas outlets 48, 48 on the lower side of the reaction chamber 42 are driven by the pump 44.
The reaction residual gas in the reaction chamber 42 is exhausted. At this time, the SC raw material gas sent from the raw material gas supply device 43 into the raw material gas diffusing section 47 is diffused as shown by the arrow in the figure. Through the series of operations described above, a predetermined uniform SC body material gas atmosphere is formed in the vicinity of the CVD reaction region of the long substrate 50 in the reaction chamber 42.
【００２２】次に、所定の原料ガス雰囲気に調節された
反応チャンバ４２内の長尺基板５０を基板ヒータ４５で
加熱し、この長尺基板５０表面にＳＣ層を蒸着させ、こ
れによりＳＣ体を作製する。Next, the long substrate 50 in the reaction chamber 42 adjusted to a predetermined source gas atmosphere is heated by the substrate heater 45, and the SC layer is vapor-deposited on the surface of the long substrate 50, whereby the SC body is formed. Create.
【００２３】なお、本発明に係わるＣＶＤ反応装置を用
いてＳＣ体を製造する際において好適なＳＣ体原料とし
ては、例えばＹ−Ｂａ−Ｃｕ−Ｏ系のＳＣ体を作製する
際は、Ｙ-ビス-2,2,6,6-テトラメチル-3,5-ヘプタンジ
オナート（略称：Ｙ（ＤＰＭ）3）やＢａ-ビス-2,2,6,6
-テトラメチル-3,5-ヘプタンジオナート（略称：Ｂａ
（ＤＰＭ）2）やＣｕ-ビス-2,2,6,6-テトラメチル-3,5-
ヘプタンジオナート（略称：Ｃｕ（ＤＰＭ）2）などの
ＳＣ体原料が好適である。A suitable SC body material for producing an SC body by using the CVD reactor according to the present invention is, for example, Y-Ba-Cu-O-based SC body. Bis-2,2,6,6-tetramethyl-3,5-heptanedionate (abbreviation: Y (DPM) 3 ) and Ba-bis-2,2,6,6
-Tetramethyl-3,5-heptanedionate (abbreviation: Ba)
(DPM) 2 ) and Cu-bis-2,2,6,6-tetramethyl-3,5-
SC body raw materials such as heptane dionate (abbreviation: Cu (DPM) 2 ) are suitable.
【００２４】[0024]
【実施例】上記した本発明のＣＶＤ反応装置の一例であ
るＣＶＤ反応装置４１を用いて以下の操作を行い、ＳＣ
体を作製した。まず、長尺のハステロイ基板を基板移送
装置４６によって１ｍ／ｈの送入速度で反応チャンバ４
２内に送入し、さらに原料ガス供給装置４３から反応チ
ャンバ４２内に、Ｙ（ＤＰＭ）3、Ｂａ（ＤＰＭ）2、Ｃ
ｕ（ＤＰＭ）2より成るＳＣ体原料ガスを導入した。同
時に、排気ポンプ４４により反応チャンバ４２の下方側
の２つのガス排出口４８，４８から４８０ml/minの速度
で反応チャンバ４２内のガスを排気し、さらに上記長尺
ハステロイ基板を基板ヒータ４５で７００℃に加熱し
た。EXAMPLE A CVD reactor 41, which is an example of the above-described CVD reactor of the present invention, was used to carry out the following operations to perform SC
The body was made. First, a long Hastelloy substrate is transferred to the reaction chamber 4 by the substrate transfer device 46 at a feed rate of 1 m / h.
2 into the reaction chamber 42 from the source gas supply device 43, and Y (DPM) 3 , Ba (DPM) 2 , C
An SC body material gas composed of u (DPM) 2 was introduced. At the same time, the gas in the reaction chamber 42 is exhausted at a rate of 480 ml / min from the two gas outlets 48, 48 on the lower side of the reaction chamber 42 by the exhaust pump 44, and the long hastelloy substrate is further heated to 700 by the substrate heater 45. Heated to ° C.
【００２５】上記操作により、長尺ハステロイ基板上に
Ｙ−Ｂａ−Ｃｕ−Ｏ系ＳＣ層が形成された長尺ＳＣ体を
作製した。また、得られた長尺ＳＣ体のＳＣ層は、約１
０ないし１５μｍの膜厚で、かつその組成は均一であっ
た。また、その長尺ＳＣ体の臨界温度（Ｔc）は、７７
Ｋ以上であった。By the above operation, a long SC body having a Y-Ba-Cu-O SC layer formed on a long Hastelloy substrate was produced. In addition, the SC layer of the obtained long SC body has about 1
The film thickness was 0 to 15 μm and the composition was uniform. The critical temperature (T c ) of the long SC body is 77.
It was K or more.
【００２６】（比較例） 比較例として、先に述べた縦
型の反応チャンバを用いた従来のＣＶＤ反応装置１を用
いて長尺ＳＣ体を作製した。まず、基板移送装置６によ
って反応チャンバ２内に、１ｍ／ｈの送入速度で上記実
施例と同様の長尺ハステロイ基板を送入し、さらに原料
ガス供給管８を介して原料ガス供給装置３からチャンバ
２内に上記実施例と同様の組成のＳＣ体原料ガスを導入
した。同時に、ガス排出口９から４８０ml/minの速度で
反応チャンバ２内のガスを排気し、さらに基板ヒータ６
で上記長尺ハステロイ基板を７００℃で加熱した。Comparative Example As a comparative example, a long SC body was manufactured using the conventional CVD reactor 1 using the above-mentioned vertical reaction chamber. First, the substrate transfer device 6 feeds the long Hastelloy substrate similar to that in the above-described embodiment into the reaction chamber 2 at the feeding speed of 1 m / h, and further, the raw material gas supply device 3 through the raw material gas supply pipe 8. From the above, an SC raw material gas having the same composition as that in the above-described example was introduced into the chamber 2. At the same time, the gas in the reaction chamber 2 was exhausted from the gas outlet 9 at a rate of 480 ml / min, and the substrate heater 6
The long Hastelloy substrate was heated at 700 ° C.
【００２７】上記操作により、長尺ハステロイ基板上に
Ｙ−Ｂａ−Ｃｕ−Ｏ系ＳＣ層が形成された長尺ＳＣ体を
作製した。得られた長尺ＳＣ体のＳＣ層は、約２〜４μ
ｍの膜厚であった。By the above operation, a long SC body having a Y-Ba-Cu-O SC layer formed on a long Hastelloy substrate was produced. The SC layer of the obtained long SC body is about 2 to 4 μm.
The film thickness was m.
【００２８】[0028]
【発明の効果】以上述べたように、本発明のＣＶＤ反応
装置にあっては、反応チャンバの上部に、上方に向けて
すぼまりかつその頂部に原料ガス供給手段が接続された
原料ガス拡散部を形成し、該反応チャンバの下方側の長
手方向両端部に、前記ガス排気手段に接続される排気口
を設けた構成としたので、前記原料ガス供給手段から供
給された原料ガスは、該原料ガス拡散部で均一に拡散さ
れて該反応チャンバ内の長尺基体近傍に到達し、反応残
ガスは該反応チャンバの下方側の長手方向両端部に設け
られた排気口を経て排気されので、上記反応チャンバ内
の長尺基体のＣＶＤ反応領域近傍では、原料ガス雰囲気
が均一となる。従って、長尺基体上に均一かつ安定な組
成のＣＶＤ蒸着層を効率的に形成することができる。As described above, in the CVD reactor of the present invention, the raw material gas diffusion which is narrowed upward in the upper part of the reaction chamber and has the raw material gas supply means connected to the top thereof. And the exhaust port connected to the gas exhaust means is provided at both ends in the longitudinal direction on the lower side of the reaction chamber, the source gas supplied from the source gas supply means is Since the raw material gas is uniformly diffused in the source gas diffusion portion and reaches the vicinity of the long substrate in the reaction chamber, and the reaction residual gas is exhausted through exhaust ports provided at both longitudinal end portions on the lower side of the reaction chamber, The source gas atmosphere becomes uniform in the vicinity of the CVD reaction region of the long substrate in the reaction chamber. Therefore, a CVD vapor deposition layer having a uniform and stable composition can be efficiently formed on a long substrate.
【図１】 本発明のＣＶＤ反応装置の一例を示す概略断
面図である。FIG. 1 is a schematic sectional view showing an example of a CVD reaction apparatus of the present invention.
【図２】 従来の縦型の反応チャンバを用いたＣＶＤ反
応装置を示す図である。FIG. 2 is a diagram showing a conventional CVD reactor using a vertical reaction chamber.
【図３】 従来の横長型の反応チャンバを用いたＣＶＤ
反応装置を示す図である。FIG. 3 is a conventional CVD using a horizontally long reaction chamber.
It is a figure which shows a reactor.
４１…ＣＶＤ反応装置、４２…反応チャンバ、４３…原
料ガス供給装置、４４…排気ポンプ、４５…基板ヒー
タ、４６…基板移送装置、４７…原料ガス拡散部、４８
…ガス排出口、４９…ガス排出管、５０…長尺基板。41 ... CVD reaction device, 42 ... Reaction chamber, 43 ... Raw material gas supply device, 44 ... Exhaust pump, 45 ... Substrate heater, 46 ... Substrate transfer device, 47 ... Raw material gas diffusion section, 48
... gas exhaust port, 49 ... gas exhaust pipe, 50 ... long substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 香川 昭 東京都江東区木場一丁目５番１号 藤倉電 線株式会社内 (72)発明者 河野 宰 東京都江東区木場一丁目５番１号 藤倉電 線株式会社内 (72)発明者 佐治 明 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内 (72)発明者 黒田 昇 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内 (72)発明者 吉田 弘 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Akira Kagawa 1-5-1 Kiba, Koto-ku, Tokyo Fujikura Electric Line Co., Ltd. (72) Satoru Kono 1-5-1 Kiba, Koto-ku, Tokyo Fujikura Electric Wire Co., Ltd. (72) Inventor Akira Saji 1 20-20 Kitakanyama, Otaka-cho, Midori-ku, Nagoya-shi, Aichi Chubu Electric Power Co., Inc. Electric Power Technology Research Institute (72) Inventor Noboru Kuroda, Midori-ku, Nagoya-shi, Aichi Chubu Electric Power Co., Inc. 20-20 Takamachi character Chubu Electric Power Co., Inc. (72) Inventor Hiroshi Yoshida 1 Kitakanyama, Otaka-cho, Midori-ku, Aichi Prefecture
Claims (1)
せしめて基体表面に生成物を堆積させるＣＶＤ反応を行
う横長型の反応チャンバと、該反応チャンバ内に原料ガ
スを供給する原料ガス供給手段と、該反応チャンバ内の
ガスを排気するガス排気手段と、長尺の基体を該反応チ
ャンバの長手方向に沿って一方側に移動させる基板移動
手段と、該反応チャンバ内に配設された横長型の加熱手
段とを備えたＣＶＤ反応装置において、上記反応チャン
バの上部には、上方に向けてすぼまりかつその頂部に原
料ガス供給手段が接続された原料ガス拡散部が形成さ
れ、該反応チャンバの下方側の長手方向両端部には、前
記ガス排気手段に接続される排気口が設けられてなり、
前記原料ガス供給手段から供給された原料ガスを、該原
料ガス拡散部で均一に拡散させて該反応チャンバ内の長
尺基板近傍に到達せしめ、反応残ガスを該反応チャンバ
の下方側の長手方向両端部に設けられた排気口を経て排
気せしめることを特徴とするＣＶＤ反応装置。1. A horizontally long reaction chamber for performing a CVD reaction in which a raw material gas such as a raw material compound gas is chemically reacted to deposit a product on a substrate surface, and a raw material gas supply means for supplying the raw material gas into the reaction chamber. A gas exhausting means for exhausting the gas in the reaction chamber, a substrate moving means for moving a long substrate to one side along the longitudinal direction of the reaction chamber, and a horizontally long substrate arranged in the reaction chamber. In a CVD reactor equipped with a mold-type heating means, a source gas diffusion section that is narrowed upward and has source gas supply means connected to the top is formed in the upper part of the reaction chamber, and the reaction is performed. Exhaust ports connected to the gas exhaust means are provided at both ends in the longitudinal direction on the lower side of the chamber,
The raw material gas supplied from the raw material gas supply means is uniformly diffused in the raw material gas diffusing section so as to reach the vicinity of the long substrate in the reaction chamber, and a reaction residual gas is generated in the longitudinal direction of the lower side of the reaction chamber. A CVD reactor characterized in that it is exhausted through exhaust ports provided at both ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03222268A JP3140101B2 (en) | 1991-08-07 | 1991-08-07 | CVD reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03222268A JP3140101B2 (en) | 1991-08-07 | 1991-08-07 | CVD reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0544042A true JPH0544042A (en) | 1993-02-23 |
| JP3140101B2 JP3140101B2 (en) | 2001-03-05 |
Family
ID=16779726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03222268A Expired - Lifetime JP3140101B2 (en) | 1991-08-07 | 1991-08-07 | CVD reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3140101B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005256075A (en) * | 2004-03-11 | 2005-09-22 | Jfe Steel Kk | Continuous chemical vapor deposition system for metallic strip |
| JP4542641B2 (en) * | 1999-05-24 | 2010-09-15 | 株式会社アルバック | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus |
| JP2013144828A (en) * | 2012-01-13 | 2013-07-25 | Furukawa Electric Co Ltd:The | Cvd apparatus |
-
1991
- 1991-08-07 JP JP03222268A patent/JP3140101B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542641B2 (en) * | 1999-05-24 | 2010-09-15 | 株式会社アルバック | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus |
| JP2005256075A (en) * | 2004-03-11 | 2005-09-22 | Jfe Steel Kk | Continuous chemical vapor deposition system for metallic strip |
| JP4553608B2 (en) * | 2004-03-11 | 2010-09-29 | Ｊｆｅスチール株式会社 | Metal strip continuous chemical vapor deposition system |
| JP2013144828A (en) * | 2012-01-13 | 2013-07-25 | Furukawa Electric Co Ltd:The | Cvd apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3140101B2 (en) | 2001-03-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5011550B2 (en) | Ultraviolet (UV) and plasma enhanced metal organic chemical vapor deposition (MOCVD) methods | |
| CN101506960B (en) | Method of base management | |
| KR100720778B1 (en) | Method of forming silicon nitride film and system for carrying out the same | |
| EP3751018A1 (en) | Vacuum reaction device and reaction method | |
| CN1662674A (en) | System for depositing a film onto a substrate using a low vapor pressure gas precursor | |
| CN110537243A (en) | For forming the method and apparatus and semiconductor substrate of film layer on a semiconductor substrate | |
| EP0047112B1 (en) | Method of forming phosphosilicate glass films | |
| US4031851A (en) | Apparatus for producing improved high strength filaments | |
| US4651673A (en) | CVD apparatus | |
| JPH0544042A (en) | Cvd reactor | |
| JP2007521392A (en) | Metal organic chemical vapor deposition (MOCVD) process and apparatus for producing multilayer high temperature superconducting (HTS) coated tapes | |
| US4518455A (en) | CVD Process | |
| JP3127011B2 (en) | CVD reactor | |
| US5571561A (en) | Coated filaments | |
| JP3804913B2 (en) | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus | |
| JPS6239534B2 (en) | ||
| JP3115367B2 (en) | CVD reactor | |
| JPH0693434B2 (en) | Vapor phase growth equipment | |
| JPH0633245A (en) | Cvd device | |
| JPS6058608A (en) | Heat processing furnace | |
| JP3285897B2 (en) | Method and apparatus for vaporizing CVD raw material for producing oxide superconductor | |
| JP2003512517A (en) | Method and equipment for forming a layer on a substrate | |
| JP2588075Y2 (en) | Thin film forming equipment | |
| WO2021231115A1 (en) | Systems and methods for depositing a layer on a substrate using atomic oxygen | |
| JPS622524A (en) | Vapor-phase growth device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20001121 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071215 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081215 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081215 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091215 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101215 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101215 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111215 Year of fee payment: 11 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111215 Year of fee payment: 11 |