JPH0544028A - Target in sputtering device - Google Patents
Target in sputtering deviceInfo
- Publication number
- JPH0544028A JPH0544028A JP3201038A JP20103891A JPH0544028A JP H0544028 A JPH0544028 A JP H0544028A JP 3201038 A JP3201038 A JP 3201038A JP 20103891 A JP20103891 A JP 20103891A JP H0544028 A JPH0544028 A JP H0544028A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sample
- target surface
- distance
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，スパッタ装置の設計，
製作，評価に関する。近年のスパッタ装置には，半導体
基板等の試料の大口径化が要求され，その実現の為，均
一なスパッタリングを行うターゲットと試料間の距離，
並びに，ターゲット面の幾何学的構造を最適化させる必
要がある。BACKGROUND OF THE INVENTION The present invention relates to the design of a sputtering device,
Regarding production and evaluation. In recent years, the sputtering equipment is required to have a large diameter of the sample such as a semiconductor substrate.
In addition, it is necessary to optimize the geometric structure of the target surface.
【０００２】そのため，スパッタ装置の設計，製作の
際，机上の計算のみでは不充分なことが多く，実際にタ
ーゲットを取り付けて，実用評価を行うことが肝要であ
る。Therefore, when designing and manufacturing a sputtering apparatus, it is often not enough to carry out only the calculation on the desk, and it is important to actually attach the target for practical evaluation.
【０００３】[0003]
【従来の技術】従来のターゲットと試料間の距離の最適
化においては，机上の計算の上に，更に，実際に試料側
をターゲット側に移動し，または，反対に，ターゲット
側を移動し，評価を行っているが，後者の場合，バッキ
ングプレートにターゲット材を各種方法にて固定したボ
ンディング式の場合，バッキングプレートを作り直した
り，ターゲット材の厚さを変えてボンディングしたり
と，時間と経費を要していた。2. Description of the Related Art In the conventional optimization of the distance between the target and the sample, after the calculation on the desk, the sample side is actually moved to the target side, or conversely, the target side is moved. In the latter case, in the case of the bonding method in which the target material is fixed to the backing plate by various methods, the backing plate may be remade or bonding may be performed by changing the thickness of the target material. Was needed.
【０００４】また，ターゲット面の幾何学的構造の最適
化においても，ターゲットと試料間の距離の最適化と同
様に，実際にターゲット面形状を色々作り，時間と経費
を要していた。Further, in optimizing the geometrical structure of the target surface, as in the case of optimizing the distance between the target and the sample, various shapes of the target surface were actually formed, which required time and cost.
【０００５】[0005]
【発明が解決しようとする課題】従って，短期間で安
く，ある程度の結果を出す事が困難で，無駄が多いとい
った問題を発生していた。Therefore, there has been a problem that it is cheap in a short period of time, it is difficult to obtain a certain result, and there is much waste.
【０００６】本発明は，以上の点を鑑み，短期間で更に
安く，ターゲットと試料間の距離の最適化と，ターゲッ
ト面の幾何学的形状の最適化を行うことを目的とする。In view of the above points, an object of the present invention is to optimize the distance between the target and the sample and the geometrical shape of the target surface at a lower cost in a short period of time.
【０００７】[0007]
【課題を解決するための手段】図１は本発明の原理説明
図である。図において，１はターゲット，２は試料であ
る。FIG. 1 illustrates the principle of the present invention. In the figure, 1 is a target and 2 is a sample.
【０００８】上記の問題点は，一度に一条件の評価しか
行えない事にあり，複数のターゲット面と試料間の距
離，ターゲット面の幾何学的形状の条件をターゲットの
面加工により同時に実現すると良い。The above problem is that only one condition can be evaluated at a time, and if the distance between a plurality of target surfaces and the sample and the geometrical conditions of the target surface are simultaneously realized by the surface processing of the target. good.
【０００９】図１は本発明の原理図であり，図１（ａ）
はターゲット面と試料間の距離をS1からS2と変えたも
の，図１（ｂ）はターゲット面の幾何学的構造, 例え
ば, 面角度θ1 からθ2 と変えたもの，図１（ｃ）はタ
ーゲットの同一面上で, 両者を同時に実現したものであ
る。FIG. 1 shows the principle of the present invention, and FIG.
Shows that the distance between the target surface and the sample is changed from S 1 to S 2, and Fig. 1 (b) shows the geometric structure of the target surface, for example, the plane angle θ 1 to θ 2 is changed, In c), both are realized simultaneously on the same surface of the target.
【００１０】即ち，本発明の目的は，スパッタリング時
のターゲット面と試料間の距離決定とターゲット面の幾
何学的形状決定を行う評価用ターゲットにおいて，図１
（ａ）に示すように，ターゲット面と試料間の距離が，
該ターゲットの同一面内で複数変えて形成された構造を
有することにより，或いは，図１（ｂ）に示すように，
ターゲット面の幾何学的形状が，該ターゲットの同一面
内で複数変えて形成された構造を有することにより，更
に，図１（ｃ）に示すように，ターゲット面と試料間の
距離，並びに，ターゲット面の幾何学的形状が，該ター
ゲットの同一面内で複数変えて形成された構造を有する
ことにより達成される。That is, the object of the present invention is to provide an evaluation target for determining the distance between the target surface and the sample during sputtering and the geometrical shape of the target surface.
As shown in (a), the distance between the target surface and the sample is
By having a structure in which a plurality of different targets are formed in the same plane, or, as shown in FIG. 1 (b),
Since the geometrical shape of the target surface has a structure formed by changing a plurality of geometric shapes in the same surface of the target, as shown in FIG. 1C, the distance between the target surface and the sample, and The target surface geometry is achieved by having multiple structures formed in the same plane of the target.
【００１１】[0011]
【作用】上記のように，ターゲットの同一面内に複数の
評価用パターンを設けた本発明の複合ターゲットを用い
ることにより，１回のスパッタリング実験で，数種類の
ターゲットを使用した場合や試料とターゲットの距離変
化を数回行った場合と同様のデータを取得することがで
きる。As described above, by using the composite target of the present invention in which a plurality of evaluation patterns are provided in the same plane of the target, the case where several kinds of targets are used in one sputtering experiment or the sample and the target are used. It is possible to obtain the same data as when the distance change is performed several times.
【００１２】次に，図２はエロージョンの発生した場合
の説明図である。図において，１はターゲット，２は試
料，３はエロージョン，４はスパッタ膜である。Next, FIG. 2 is an explanatory diagram when erosion occurs. In the figure, 1 is a target, 2 is a sample, 3 is an erosion, and 4 is a sputtered film.
【００１３】一般に，スパッタリングに使用したターゲ
ットは，使用期間に合ったエロージョン（浸食）を起こ
す。本発明では，図２（ａ）に示すように，ターゲット
面上の一部のエロージョン部分から対向した試料にスパ
ッタされる場合，試料上のスパッタ膜の厚さ形状は図の
ようになる。In general, the target used for sputtering causes erosion which is suitable for the period of use. In the present invention, as shown in FIG. 2A, when a part of the erosion portion on the target surface is sputtered on the facing sample, the thickness profile of the sputtered film on the sample is as shown in the figure.
【００１４】このため，図２（ｂ）に示すように，ター
ゲットと試料間の距離がS1からS2に変化した場合，対向
した試料には図のようにスパッタ膜が形成される。従っ
て，図２（ｃ）のような場合には，対向した試料には，
前述の図２（ａ）と図２（ｂ）とを加えた量がスパッタ
される。Therefore, as shown in FIG. 2B, when the distance between the target and the sample changes from S 1 to S 2 , a sputtered film is formed on the facing sample as shown in the figure. Therefore, in the case of FIG.
The amount obtained by adding the above-described FIG. 2A and FIG. 2B is sputtered.
【００１５】[0015]
【実施例】図３は本発明の一実施例の工程順模式断面図
である。図において，１はターゲット，２は試料，３は
エロージョン，４はスパッタ膜である。FIG. 3 is a schematic cross-sectional view in order of the processes of one embodiment of the present invention. In the figure, 1 is a target, 2 is a sample, 3 is an erosion, and 4 is a sputtered film.
【００１６】本発明の一実施例について，図３により説
明する。図３（ａ）に平面図で示すように，ターゲット
面と試料間の距離を４条件変えられるように，同一ター
ゲット面内に４構造を加工した場合である。An embodiment of the present invention will be described with reference to FIG. As shown in the plan view of FIG. 3A, this is a case where four structures are processed in the same target surface so that the distance between the target surface and the sample can be changed under four conditions.
【００１７】図３（ｂ）はこのターゲットを用いて，試
料にスパッタした様子をＡーＡ’断面図で示したもので
あり，S1＞S2で d1'＜d2' となる。また，図３（ｃ）は
このターゲットを用いて，試料にスパッタした様子をＢ
ーＢ’断面図で示したものであり，S0＞S3で d0'＜d3'
となる。FIG. 3 (b) is a sectional view taken along the line AA 'showing the sputtering of a sample using this target, where S 1 > S 2 and d 1 '<d 2 '. In addition, FIG. 3 (c) shows a state in which the target is sputtered using this target.
B'shown in cross section, where S 0 > S 3 and d 0 '<d 3 '
Becomes
【００１８】本実施例では，S0＞S1＞S3＞S2であれば,
d0'＜ d1'＜ d3'＜ d2'となる。一方，面構造の配置を
変えた場合でも，スパッタ膜の厚さの傾向は変わらな
い。In this embodiment, if S 0 > S 1 > S 3 > S 2 ,
d 0 '<d 1 '<d 3 '<d 2 '. On the other hand, the tendency of the thickness of the sputtered film does not change even when the arrangement of the plane structure is changed.
【００１９】上記の実施例では，ターゲット面と試料間
の距離を変えて面構造を形成しているが, 図３（ｄ）及
び（ｅ）に示すように，ターゲット面に異なる形状を形
成しても良い。In the above embodiment, the surface structure is formed by changing the distance between the target surface and the sample. However, as shown in FIGS. 3D and 3E, different shapes are formed on the target surface. May be.
【００２０】[0020]
【発明の効果】以上説明したように，本発明によれば，
一度に複数の条件下での評価が可能となり，評価期間の
短縮ができ，設計，製作，評価の経費の削減に大きく寄
与するところが大きい。As described above, according to the present invention,
Evaluations can be performed under multiple conditions at one time, the evaluation period can be shortened, and it greatly contributes to the reduction of design, manufacturing, and evaluation costs.
【図１】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.
【図２】 エロージョンの発生した場合の説明図FIG. 2 is an explanatory diagram when erosion occurs.
【図３】 本発明の一実施例の説明図FIG. 3 is an explanatory diagram of an embodiment of the present invention.
１ ターゲット ２ 試料 ３ エロージョン ４ スパッタ膜 1 Target 2 Sample 3 Erosion 4 Sputtered film
Claims (2)
間の距離決定とターゲット面の幾何学的形状決定を行う
評価用ターゲットにおいて，ターゲット面と試料間の距
離が，該ターゲットの同一面内で複数変えて形成された
構造を有することを特徴とするスパッタ装置のターゲッ
ト。1. In an evaluation target for determining a distance between a target surface and a sample and a geometrical shape of the target surface during sputtering, a plurality of distances between the target surface and the sample are changed in the same plane of the target. A target for a sputtering apparatus, which has a structure formed by
間の距離決定とターゲット面の幾何学的形状決定を行う
評価用ターゲットにおいて，ターゲット面の幾何学的形
状が，該ターゲットの同一面内で複数変えて形成された
構造を有することを特徴とするスパッタ装置のターゲッ
ト。2. An evaluation target for determining a distance between a target surface and a sample during sputtering and a geometric shape of the target surface, wherein a plurality of target surface geometric shapes are changed in the same surface of the target. A target for a sputtering apparatus, which has a structure formed by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3201038A JPH0544028A (en) | 1991-08-12 | 1991-08-12 | Target in sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3201038A JPH0544028A (en) | 1991-08-12 | 1991-08-12 | Target in sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0544028A true JPH0544028A (en) | 1993-02-23 |
Family
ID=16434403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3201038A Withdrawn JPH0544028A (en) | 1991-08-12 | 1991-08-12 | Target in sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0544028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5364173B2 (en) * | 2011-01-26 | 2013-12-11 | Ｊｘ日鉱日石金属株式会社 | Sputtering target |
-
1991
- 1991-08-12 JP JP3201038A patent/JPH0544028A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5364173B2 (en) * | 2011-01-26 | 2013-12-11 | Ｊｘ日鉱日石金属株式会社 | Sputtering target |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981112 |