JPH0543396A - Production of oxide superconductor and production device therefor - Google Patents
Production of oxide superconductor and production device thereforInfo
- Publication number
- JPH0543396A JPH0543396A JP3220994A JP22099491A JPH0543396A JP H0543396 A JPH0543396 A JP H0543396A JP 3220994 A JP3220994 A JP 3220994A JP 22099491 A JP22099491 A JP 22099491A JP H0543396 A JPH0543396 A JP H0543396A
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- layer
- oxide superconductor
- substrate
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、超電導マグネットコ
イルや電力輸送用などとして応用開発が進められている
酸化物超電導体を化学気相蒸着法を用いて製造する酸化
物超電導体の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an oxide superconductor using a chemical vapor deposition method for producing an oxide superconductor, which is being applied and developed for a superconducting magnet coil and for electric power transportation. ..
【０００２】[0002]
【従来の技術】近年、液体窒素温度で超電導状態となる
酸化物系の超電導体が多数発見され、これら酸化物超電
導体の超電導マグネットコイルや電力輸送用などへの応
用開発が進められている。上記酸化物超電導体は、通
常、ハステロイなどの耐蝕耐熱性金属を用いた基材上
に、酸化物超電導薄膜を化学気相蒸着法（以下、ＣＶＤ
法と略記する。）等を用いて蒸着し製造されている。し
かしながら、上記酸化物超電導体を作製する際、上記基
材上に酸化物超電導薄膜を直接蒸着すると、形成された
酸化物超電導層中に基材中の元素や化合物が拡散してし
まい、酸化物超電導層の組成が変わってしまったり、さ
らに基材と酸化物超電導体との整合性が悪くなるととも
に、結晶配向性の良好な酸化物超電導層を形成できない
ので好ましくなかった。2. Description of the Related Art In recent years, a large number of oxide-based superconductors which are in a superconducting state at the temperature of liquid nitrogen have been discovered, and application development of these oxide superconductors for superconducting magnet coils and power transportation is being advanced. In the oxide superconductor, an oxide superconducting thin film is usually formed on a substrate using a corrosion resistant heat resistant metal such as Hastelloy by chemical vapor deposition (hereinafter, referred to as CVD).
Abbreviated as law. ) And the like are vapor-deposited and manufactured. However, when producing the oxide superconductor, if the oxide superconducting thin film is directly vapor-deposited on the substrate, the element or compound in the substrate will diffuse into the formed oxide superconducting layer, and the oxide It is not preferable because the composition of the superconducting layer is changed, the compatibility between the base material and the oxide superconductor is deteriorated, and the oxide superconducting layer having good crystal orientation cannot be formed.
【０００３】そこで、図７に示すようなテープ状の基材
１上に、この基材１中の元素や化合物が酸化物超電導層
中へ拡散するのを防止することができ、かつ酸化物超電
導層との結晶整合性に優れているＭｇＯやＳｒＴｉＯ3
からなる中間層２を形成し、さらにその形成された中間
層２の上に酸化物超電導層３（以下、ＳＣ層と略記す
る。）を形成するようにし、上述した問題の解決を図っ
ている。Therefore, it is possible to prevent the elements and compounds in the base material 1 from diffusing into the oxide superconducting layer on the tape-shaped base material 1 as shown in FIG. MgO and SrTiO 3 with excellent crystal compatibility with the layer
The oxide superconducting layer 3 (hereinafter abbreviated as SC layer) is formed on the formed intermediate layer 2 to solve the above-mentioned problem. ..
【０００４】上記したような基材とＳＣ層との間に中間
層を有する酸化物超電導体は、従来、例えば図８に示す
ような方法により製造されている。まず、基材１をＲＦ
スパッタ装置を内部に備えた第１の成膜装置内に設置
し、基材１上に中間層２を蒸着した中間層形成済み基材
４を作製する（第１成膜工程）。次に、作製した中間層
形成済み基材４をＣＶＤ装置を内部に備えた第２の成膜
装置内に設置し、上記中間層形成済み基材４の中間層２
上にＳＣ層３を形成する（第２成膜工程）。上記各工程
を経て、基材１とＳＣ層３との間に中間層２を有する酸
化物超電導体（以下、ＳＣ体と略記する）５が製造され
る。The oxide superconductor having the intermediate layer between the base material and the SC layer as described above is conventionally manufactured by a method shown in FIG. 8, for example. First, the substrate 1 is RF
The sputtering apparatus is installed in the first film forming apparatus provided therein, and the intermediate layer-formed base material 4 in which the intermediate layer 2 is vapor-deposited on the base material 1 is produced (first film forming step). Next, the manufactured intermediate layer-formed base material 4 is placed in a second film forming apparatus having a CVD device therein, and the intermediate layer 2 of the intermediate layer-formed base material 4 is placed.
The SC layer 3 is formed thereon (second film forming step). Through each of the above steps, an oxide superconductor (hereinafter abbreviated as SC body) 5 having the intermediate layer 2 between the base material 1 and the SC layer 3 is manufactured.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記従
来のＳＣ体の製造方法にあっては、第１成膜工程と、第
２成膜工程の２プロセスからなり、かつ前記各プロセス
は、双方とも同一の基板上に層を形成するという点で類
似の操作を有する成膜プロセスであるにも係わらず各々
独立的に行われているため製造工程が複雑化し、さらに
成膜時間も長くなるため製造コストが高くなってしまう
問題があった。従って、上記従来例は製造工程の簡略化
の点で未だ改良の余地がみられた。However, in the above-described conventional SC body manufacturing method, there are two processes of the first film forming step and the second film forming step, and both of the above processes are both processes. Despite the film forming processes that have similar operations in that layers are formed on the same substrate, they are performed independently of each other, which complicates the manufacturing process and further increases the film forming time. There was a problem that the cost became high. Therefore, the above-mentioned conventional example still has room for improvement in terms of simplification of the manufacturing process.
【０００６】また、上記従来例は中間層とＳＣ層とを各
々別装置で成膜するので、第１の装置から第２の装置へ
入れ換える際の時間ロスがあり、このロス時間中の温度
変化、機械的ひずみ、湿気等に起因して基材に形成され
た中間層に化学的あるいは構造的な劣化が発生し、上述
した中間層の効果を発揮し得なくなってしまうという問
題があった。Further, in the above-mentioned conventional example, since the intermediate layer and the SC layer are formed by separate devices, there is a time loss when switching from the first device to the second device, and the temperature change during this loss time. However, there is a problem in that the intermediate layer formed on the base material is chemically or structurally deteriorated due to mechanical strain, moisture, etc., and the above-described effect of the intermediate layer cannot be exhibited.
【０００７】さらに、上記従来のＳＣ体の製造方法は、
スパッタ法での成膜速度が遅いために、余り長尺のＳＣ
体を製造するには適さず、例えば、第１の成膜工程にお
いて用いる第１の成膜装置としてＲＦスパッタ装置を用
いた場合は、適用可能な基材の全長が１５ｃｍ程度に限
定されてしまうという問題があった。Further, the above-mentioned conventional method for manufacturing an SC body is
Since the film formation rate by the sputtering method is slow, the SC is too long.
It is not suitable for manufacturing a body. For example, when an RF sputtering apparatus is used as the first film forming apparatus used in the first film forming step, the applicable total length of the base material is limited to about 15 cm. There was a problem.
【０００８】本発明は上記事情に鑑みなされたもので、
簡略な製造工程をもって上述した中間層の効果を十分発
揮し得るような良好な中間層を形成することができ、か
つ長尺のＳＣ体を製造することができるＳＣ体の製造方
法を提供し、併せてその製造方法を良好に行うことので
きるＳＣ体の製造装置の提供を目的とする。The present invention has been made in view of the above circumstances,
Provided is a method for producing an SC body, which is capable of forming a good intermediate layer capable of sufficiently exerting the effect of the above-mentioned intermediate layer by a simple production process, and which can produce a long SC body. At the same time, it is an object of the present invention to provide an SC body manufacturing apparatus capable of favorably performing the manufacturing method.
【０００９】[0009]
【課題を解決するための手段】かかる課題は、チャンバ
内に設けられた長尺の基板を一方側に移動させつつ、該
チャンバ内に酸化物超電導体を構成する各元素の化合物
を気化させた原料ガスを導入し、化学蒸着法を用いて該
基板上に酸化物超電導体層を蒸着する酸化物超電導体の
製造方法において、基板上に、該基板と酸化物超電導体
層間の成分移動を阻止する材料からなる中間層を化学蒸
着法により形成する第１の工程と、次いで該中間層上に
酸化物超電導体層を化学蒸着法により蒸着する第２の工
程とを同一チャンバ内で連続的に行う構成とすることに
より解決される。The object of the invention is to vaporize the compound of each element constituting the oxide superconductor in the chamber while moving the long substrate provided in the chamber to one side. In a method for producing an oxide superconductor, in which a raw material gas is introduced and an oxide superconductor layer is vapor-deposited on the substrate using a chemical vapor deposition method, a component transfer between the substrate and the oxide superconductor layer is prevented on the substrate. A first step of forming an intermediate layer made of the material described above by a chemical vapor deposition method, and then a second step of depositing an oxide superconductor layer on the intermediate layer by a chemical vapor deposition method in the same chamber continuously. This can be solved by adopting the configuration.
【００１０】また、上記ＳＣ体の製造方法においては、
チャンバと、該チャンバ内を一方向に移動可能に設けら
れた長尺の基板と、該基板と酸化物超電導体層間の成分
移動を阻止する材料からなる中間層を化学蒸着法により
形成する原料ガスを該チャンバ内に供給する第１の供給
口と、中間層上に酸化物超電導体層を化学蒸着法により
蒸着する原料ガスを該チャンバ内に供給する第２の供給
口とが配置され、かつ該第１の供給口に接続された中間
層形成用ガス供給手段と、該第２の供給口に接続された
酸化物超電導層形成用ガス供給手段とを備え、上記第１
の供給口が、チャンバ内の該基板の移動方向前方側に位
置し、上記第２の供給口が後方側に位置するような構成
としたＳＣ体の製造装置を用いるのが望ましい。Further, in the above-mentioned SC body manufacturing method,
A source gas for forming a chamber, a long substrate provided so as to be movable in one direction in the chamber, and an intermediate layer made of a material for preventing component movement between the substrate and an oxide superconductor layer by a chemical vapor deposition method And a second supply port for supplying a source gas for depositing an oxide superconductor layer on the intermediate layer by a chemical vapor deposition method into the chamber. An intermediate layer forming gas supply unit connected to the first supply port; and an oxide superconducting layer forming gas supply unit connected to the second supply port.
It is desirable to use an SC body manufacturing apparatus configured such that the supply port is located on the front side in the moving direction of the substrate in the chamber and the second supply port is located on the rear side.
【００１１】また、上記ＳＣ体の製造装置においては、
上記チャンバ内の第１の供給口と第２の供給口との間
に、該第１の供給口側と、該第２の供給口側との各々の
雰囲気の混合を阻止するための遮蔽手段を設けた構成と
するのが望ましい。Further, in the above SC body manufacturing apparatus,
A shielding means for preventing the respective atmospheres of the first supply port side and the second supply port side from being mixed between the first supply port and the second supply port in the chamber. Is desirable.
【００１２】[0012]
【作用】本発明のＳＣ体の製造方法にあっては、上述し
たように中間層を化学蒸着法により形成する第１の工程
と、次いで該中間層上にＳＣ層を化学蒸着法により蒸着
する第２の工程を有し、かつ上記第１工程及び第２工程
が連続的に行われる構成としたので、製造工程は簡略化
される。また、基材上に中間層が形成する工程と、該中
間層上にＳＣ層を成膜する工程が同一チャンバ内でなさ
れるため、従来のように中間層とＳＣ層とを各々別装置
で成膜していた時のように、第１の装置から第２の装置
へ入れ換える際の時間ロスがなくなる。従って、このロ
ス時間中の温度変化、機械的ひずみ、湿気等に起因する
中間層の劣化が防止される。また、成膜速度が速いので
長尺のＳＣ体の作製に好適である。In the method for producing an SC body of the present invention, the first step of forming the intermediate layer by the chemical vapor deposition method as described above, and then the SC layer is vapor-deposited on the intermediate layer by the chemical vapor deposition method. Since the structure has the second step and the first step and the second step are continuously performed, the manufacturing process is simplified. Further, since the step of forming the intermediate layer on the base material and the step of forming the SC layer on the intermediate layer are performed in the same chamber, the intermediate layer and the SC layer are separately formed by different devices as in the conventional case. There is no time loss when switching from the first device to the second device as when forming a film. Therefore, deterioration of the intermediate layer due to temperature change, mechanical strain, moisture, etc. during this loss time is prevented. Further, since the film forming rate is high, it is suitable for producing a long SC body.
【００１３】以下、本発明を詳細に説明する。図１は、
本発明のＳＣ体の製造方法において好適に用いられるＳ
Ｃ体の製造装置（以下、単に製造装置と略記する。）の
第１の例を示すものであり、図中符号１１は製造装置で
ある。この製造装置１１は、チャンバ１２と、このチャ
ンバ１２内に備えられた中間層原料ガス供給口１３（以
下、供給口１３と略記する。）と、同じくチャンバ１２
内に備えられた酸化超電導層原料ガス供給口１４（以
下、供給口１４と略記する。）と、基板移動装置１５
と、遮蔽ガス供給装置１６と、真空ポンプ１７と、気化
装置１８，１９と、抵抗加熱式のヒータ２０，２１とか
ら構成されている。The present invention will be described in detail below. Figure 1
S which is preferably used in the method for producing an SC body of the present invention
1 shows a first example of a C-body manufacturing apparatus (hereinafter, simply abbreviated as a manufacturing apparatus), in which reference numeral 11 is a manufacturing apparatus. The manufacturing apparatus 11 includes a chamber 12, an intermediate layer source gas supply port 13 (hereinafter abbreviated as supply port 13) provided in the chamber 12, and the chamber 12 as well.
Oxide superconducting layer source gas supply port 14 (hereinafter abbreviated as supply port 14) provided inside, and substrate moving device 15
, A shielding gas supply device 16, a vacuum pump 17, vaporization devices 18, 19 and resistance heating type heaters 20, 21.
【００１４】上記チャンバ１２内は、仕切部材２２によ
り中間層合成部Ａ，ＳＣ層合成部Ｂに分けられ、また、
中間層合成部ＡからＳＣ層合成部Ｂにテープ状の長尺基
板Ｘ（以下、テープＸと略記する。）を移送させる基板
移動装置１５が配置されている。また、上記中間層合成
部Ａの内部には、テープＸを下方から加熱するヒータ２
０が設けられ、かつそのヒータ２０にテープＸを挟んで
対向する位置に、気化装置１８からの中間層原料ガスを
中間層合成部Ａ内に供給する供給口１３がテープＸに向
けて開口している。一方、ＳＣ層合成部Ｂの内部にはテ
ープＸを下方から加熱するヒータ２１が設けられ、かつ
そのヒータ２１にテープＸを挟んで対向する位置に、気
化装置１９からのＳＣ層（以下、ＳＣ層と略記する）原
料ガスをＳＣ層合成部Ｂ内に供給する供給口１４がテー
プＸに向けて開口している。A partition member 22 divides the inside of the chamber 12 into an intermediate layer synthesizing section A and an SC layer synthesizing section B.
A substrate moving device 15 for transferring a tape-shaped long substrate X (hereinafter, abbreviated as tape X) from the intermediate layer synthesizing section A to the SC layer synthesizing section B is arranged. Further, inside the intermediate layer synthesizing section A, a heater 2 for heating the tape X from below is provided.
0 is provided, and a supply port 13 for supplying the intermediate layer source gas from the vaporizer 18 into the intermediate layer synthesis section A is opened toward the tape X at a position facing the heater 20 with the tape X interposed therebetween. ing. On the other hand, a heater 21 for heating the tape X from below is provided inside the SC layer synthesizing section B, and the SC layer from the vaporizer 19 (hereinafter referred to as SC A supply port 14 for supplying a raw material gas into the SC layer synthesizing section B is opened toward the tape X.
【００１５】また、上記仕切部材２２にはテープＸが通
過可能なように隙間Ｃが形成され、この隙間Ｃにより、
仕切部材２２は上片２２Ａと、下片２２Ｂとに分かれ、
さらに上片の上端は遮蔽ガス供給装置１６が接続され、
上片下端のガス噴出口２３から遮蔽ガスを噴出するよう
になっている。一方、下片２２Ｂの下端は真空ポンプ１
７に接続され、その上端のガス吸入口２３から遮蔽ガス
を吸引するようになっている。これにより上記隙間Ｃに
遮蔽ガスによる隔壁が形成され、中間層合成部ＡとＳＣ
層合成部Ｂとの間の雰囲気の混合を防止している。な
お、この遮蔽ガスとしては、アルゴン、ヘリウム等の不
活性ガスを用いるのが望ましい。A gap C is formed in the partition member 22 so that the tape X can pass therethrough.
The partition member 22 is divided into an upper piece 22A and a lower piece 22B,
Further, a shielding gas supply device 16 is connected to the upper end of the upper piece,
The shielding gas is ejected from the gas ejection port 23 at the lower end of the upper piece. On the other hand, the lower end of the lower piece 22B has a vacuum pump 1
7, and the shielding gas is sucked through the gas suction port 23 at the upper end thereof. As a result, a partition wall is formed by the shielding gas in the gap C, and the intermediate layer synthesis section A and SC
The mixture of the atmosphere with the layer synthesizing section B is prevented. As the shielding gas, it is desirable to use an inert gas such as argon or helium.
【００１６】なお、本例のＳＣ体製造装置において用い
られる気化装置１８及び気化装置１９は、各気化装置に
適用する原料を良好に気化できるものであれば特に限定
されるものではないが、特に気化装置１９において、Ｙ
系などの固体の超電導体原料を用いる場合は、例えば、
図２に示すように気化塔３０内に固体（粉末）状超電導
体原料を供給する供給装置３１と、気化塔３０内にキャ
リアガスを供給するキャリアガス供給管３２と、気化塔
３０内の上記原料を加熱気化するためのヒータ３３と、
気化した原料をチャンバ１２内に送り込む輸送管とから
構成されている連続気化システムや、図３に示すよう
に、収納容器３４内に設けられたホッパ３５と、このホ
ッパ３５内に収容された固体（粉末）状のＳＣ体原料３
６と、ホッパ３５内の原料粉末溜まりの内部にキャリア
ガスを吹き込む噴射管３７と、この噴射管３７の開口部
に隣接して開口された排気管３８と、排気管３８からの
原料を気化容器３９内に供給する供給管４０と、気化容
器３９内の原料を加熱気化するヒータ４１と、気化容器
３９内で気化された原料をチャンバ１２内に送り込む輸
送管４２とから構成されている連続気化システムを用い
るのが好ましい。The vaporizer 18 and the vaporizer 19 used in the SC body manufacturing apparatus of this embodiment are not particularly limited as long as the raw materials applied to the vaporizers can be vaporized satisfactorily. In the vaporizer 19, Y
When using a solid superconductor raw material such as a system, for example,
As shown in FIG. 2, a supply device 31 for supplying a solid (powder) superconductor raw material into the vaporization tower 30, a carrier gas supply pipe 32 for supplying a carrier gas into the vaporization tower 30, and the above-mentioned inside the vaporization tower 30. A heater 33 for heating and vaporizing the raw material,
A continuous vaporization system composed of a transport pipe for feeding the vaporized raw material into the chamber 12, a hopper 35 provided in a storage container 34, and a solid contained in the hopper 35 as shown in FIG. (Powdered) SC raw material 3
6, an injection pipe 37 for blowing the carrier gas into the raw material powder reservoir in the hopper 35, an exhaust pipe 38 opened adjacent to the opening of the injection pipe 37, and a vaporization container for the raw material from the exhaust pipe 38. Continuous vaporization consisting of a supply pipe 40 for supplying into the interior 39, a heater 41 for heating and vaporizing the raw material in the vaporization container 39, and a transport pipe 42 for feeding the raw material vaporized in the vaporization container 39 into the chamber 12. It is preferable to use a system.
【００１７】なお、本例のＳＣ体の製造装置１１は、Ｃ
ＶＤ反応装置として抵抗加熱方式のヒータを用いている
が、本方式に限定されることなく、例えば誘導加熱、プ
ラズマ、光（レーザ、ＵＶなど）等を用いても良い。The manufacturing apparatus 11 for the SC body of this example uses C
Although a resistance heating type heater is used as the VD reaction device, the present invention is not limited to this type, and induction heating, plasma, light (laser, UV, etc.) or the like may be used.
【００１８】なお、本例のＳＣ体の合成装置１１にあっ
ては、基板移動装置１５を真空チャンバ１２内に設けた
構成としたが図４に示すように真空チャンバ１２の外部
に設けた構成としても良い。In the SC-body synthesizing apparatus 11 of this embodiment, the substrate moving apparatus 15 is provided inside the vacuum chamber 12, but as shown in FIG. 4, it is provided outside the vacuum chamber 12. Also good.
【００１９】本例のＳＣ体の製造装置１１にあっては、
上述したようにチャンバ１２を仕切部材２２により中間
層合成部Ａ，ＳＣ層合成部Ｂに分け、かつこの仕切部材
２２に隙間Ｃを形成して上片２２Ａと下片２２Ｂとに分
け、さらにこの上片２２Ａの上端に遮蔽ガス供給装置１
６を接続して上片２２Ａ下端のガス噴出口２３から遮蔽
ガスが噴出されるようにし、一方、下片２２Ｂの下端に
真空ポンプ１７に接続し、その上端のガス吸入口２３か
ら遮蔽ガスを吸引するような構成としたので、これによ
り上記隙間Ｃに遮蔽ガスによる隔壁が形成され、中間層
合成部ＡとＳＣ層合成部Ｂとの間の雰囲気の混合を防止
できる。In the SC body manufacturing apparatus 11 of this embodiment,
As described above, the chamber 12 is divided into the intermediate layer synthesizing portion A and the SC layer synthesizing portion B by the partition member 22, and the gap C is formed in the partition member 22 to divide the upper piece 22A and the lower piece 22B. A shielding gas supply device 1 is provided on the upper end of the upper piece 22A.
6 is connected so that the shielding gas is ejected from the gas ejection port 23 at the lower end of the upper piece 22A, while the lower portion 22B is connected to the vacuum pump 17 at the lower end thereof, and the shielding gas is supplied from the gas suction port 23 at the upper end thereof. Since the suction is adopted, a partition wall is formed by the shielding gas in the gap C, so that the mixing of the atmosphere between the intermediate layer synthesizing section A and the SC layer synthesizing section B can be prevented.
【００２０】次に、上記構成の製造装置１１を用いて、
本発明のＳＣ体の製造方法の一例を示す。まず、基板移
動装置１５にテープＸを設置し、遮蔽ガス供給装置１６
を操作してガス噴出口２３から所定の流速で遮蔽用ガス
を噴出させるとともに、真空ポンプ１７を操作して上記
遮蔽用ガスを所定の流速で吸入し、隙間Ｃに遮蔽用ガス
による隔壁を形成する。Next, using the manufacturing apparatus 11 having the above structure,
An example of the method for producing the SC body of the present invention will be shown. First, the tape X is installed on the substrate moving device 15, and the shielding gas supply device 16
Is operated to eject the shielding gas from the gas ejection port 23 at a predetermined flow rate, and the vacuum pump 17 is operated to suck the shielding gas at a predetermined flow rate to form a partition wall of the shielding gas in the gap C. To do.
【００２１】上記準備が全て整ったら、気化装置１８を
作動させて中間層原料ガスと酸素との混合ガスを供給口
１３から噴出させ、同時にヒータ２０を作動させ、ヒー
タ２０により供給口１３からの噴出混合ガスを加熱し、
テープＸ上に中間層を化学蒸着させる。さらにこの操作
により、テープＸ上に均一な膜厚の中間層が形成される
ように、基板移動装置１５を操作してテープＸを中間層
合成部ＡからＳＣ層合成部Ｂの方向に移動させる。な
お、この時基板移動装置１５を構成するロール１５Ａか
ら新たなテープＸが順次送り出される。When all of the above preparations have been completed, the vaporizer 18 is operated to eject the mixed gas of the intermediate layer raw material gas and oxygen from the supply port 13, and at the same time, the heater 20 is operated so that the heater 20 causes the supply gas from the supply port 13. Heating the jetted mixed gas,
An intermediate layer is chemically vapor deposited on the tape X. Further, by this operation, the substrate moving device 15 is operated to move the tape X from the intermediate layer synthesizing section A to the SC layer synthesizing section B so that the intermediate layer having a uniform film thickness is formed on the tape X. .. At this time, a new tape X is sequentially delivered from the roll 15A that constitutes the substrate moving device 15.
【００２２】さらに、上記ＳＣ層合成部Ｂ内に中間層が
形成されたテープＸが移動されると同時に気化装置１９
を作動させて、ＳＣ層原料ガスと酸素との混合ガスを供
給口１４から噴出させるとともに、ヒータ２１を作動さ
せ、先の中間層合成部Ａ内でテープＸ上に形成された中
間層上にＳＣ層を化学蒸着する。さらにこの操作により
中間層上に均一な膜厚のＳＣ層が形成されるように、基
板移動装置１５を操作して酸化超電導層を成膜し終えた
テープＸは、基板移動装置１５を構成するロール１５Ｂ
に順次巻取られていく。上記一連の操作により図７に示
すようにテープ状の基板１、中間層２、ＳＣ膜層３より
なるテープ状のＳＣ体が製造される。Further, the tape X having the intermediate layer formed therein is moved in the SC layer synthesizing section B, and at the same time, the vaporizer 19 is moved.
Is operated to eject a mixed gas of the SC layer raw material gas and oxygen from the supply port 14, and the heater 21 is operated to operate on the intermediate layer formed on the tape X in the intermediate layer synthesizing section A. Chemical vapor deposition of the SC layer. Further, the tape X on which the oxidized superconducting layer has been formed by operating the substrate moving device 15 constitutes the substrate moving device 15 so that the SC layer having a uniform film thickness is formed on the intermediate layer by this operation. Roll 15B
Will be wound up in sequence. By the series of operations described above, a tape-shaped SC body including the tape-shaped substrate 1, the intermediate layer 2 and the SC film layer 3 is manufactured as shown in FIG.
【００２３】こうして得られたＳＣ体は、基板上に中間
層とさらにその上にＳＣ層を設けたことによって基板と
酸化物超電導体層との間の成分移動が阻止され、優れた
ＳＣ特性を有するものとなる。The SC body thus obtained has excellent SC characteristics by preventing the component transfer between the substrate and the oxide superconductor layer by providing the intermediate layer on the substrate and the SC layer on the intermediate layer. Will have.
【００２４】なお、本発明のＳＣ体の製造方法が適用す
るのに好適なＳＣ体原料としては、例えばＹ−Ｂａ−Ｃ
ｕ−Ｏ系のＳＣ体の作製では、Ｙ-ビス-2,2,6,6-テトラ
メチル-3,5-ヘプタンジオナート（略称：Ｙ（ＤＰ
Ｍ）3）やＢａ-ビス-2,2,6,6-テトラメチル-3,5-ヘプタ
ンジオナート（略称：Ｂａ（ＤＰＭ）2）やＣｕ-ビス-
2,2,6,6-テトラメチル-3,5-ヘプタンジオナート（略
称：Ｃｕ（ＤＰＭ）2）などのＳＣ体原料が好適であ
る。また、中間層としては、ＭｇＯ、ＳｒＴｉＯ3、Ｙ
ＳＺなどが好適である。An SC body material suitable for use in the SC body manufacturing method of the present invention is, for example, Y-Ba-C.
In the production of the u-O type SC body, Y-bis-2,2,6,6-tetramethyl-3,5-heptanedionate (abbreviation: Y (DP
M) 3 ) or Ba-bis-2,2,6,6-tetramethyl-3,5-heptanedionate (abbreviation: Ba (DPM) 2 ) or Cu-bis-
SC body raw materials such as 2,2,6,6-tetramethyl-3,5-heptanedionate (abbreviation: Cu (DPM) 2 ) are suitable. Further, as the intermediate layer, MgO, SrTiO 3 , Y
SZ and the like are preferred.
【００２５】本例の本発明のＳＣ体の製造方法にあって
は、上述したように中間層形成工程とＳＣ層形成工程と
が連続的に行われる構成としたので、製造工程は簡略化
される。In the method for manufacturing an SC body of the present invention of this example, since the intermediate layer forming step and the SC layer forming step are continuously performed as described above, the manufacturing step is simplified. It
【００２６】また、テープＸ上に中間層が形成された
後、その中間層上にＳＣ層が極めて速やかに成膜される
ため中間層の劣化が防止される。従って、既述したよう
な中間層の効果を十分発揮し得る良好な中間層を形成す
ることができる。Further, after the intermediate layer is formed on the tape X, the SC layer is formed very quickly on the intermediate layer, so that the deterioration of the intermediate layer is prevented. Therefore, it is possible to form a good intermediate layer that can sufficiently exert the effects of the intermediate layer as described above.
【００２７】また、本例のＳＣ体の製造方法は成膜速度
が速いので、長尺のＳＣ体に適用すると極めて有効であ
る。Further, since the SC body manufacturing method of this embodiment has a high film forming rate, it is extremely effective when applied to a long SC body.
【００２８】次に、本発明のＳＣ体の製造装置の第２の
例について述べる。図５は、本発明の製造装置の第２の
例を示すものであり、図中符号５１は製造装置である。
本例の製造装置５１は、先の例のチャンバ１２より長尺
のチャンバ５２を用い、内部に４つの合成部をテープＸ
の移動方向前方側から中間層合成部Ａ，ＳＣ層合成部
Ｂ，中間層合成部Ｃ，ＳＣ層合成部Ｄの順で形成し、か
つ中間層合成部Ａ，Ｃ内には先の例と同様の構成かつ同
様の配置でヒータ２０と、供給口１３とを設け、ＳＣ層
合成部Ｂ，Ｄ内にも先の例と同様の構成かつ同様の配置
でヒータ２１と、供給口１４とを設けている。また、各
サブチャンバ間は、先の例と同様の仕切部材２２が設け
られ、これら各仕切部材２２の隙間Ｃも先の例と同様の
方法で遮蔽用ガス隔壁により遮蔽されている。また、テ
ープＸは、先の例と同様の基板移動装置１５により中間
層合成部ＡからサブチャンバＤに順次移送されるように
なっている。Next, a second example of the SC body manufacturing apparatus of the present invention will be described. FIG. 5 shows a second example of the manufacturing apparatus of the present invention, and the reference numeral 51 in the drawing is a manufacturing apparatus.
The manufacturing apparatus 51 of this example uses a chamber 52 longer than the chamber 12 of the previous example, and has four synthesizing parts inside the tape X.
From the front side in the moving direction, the intermediate layer synthesizing section A, the SC layer synthesizing section B, the intermediate layer synthesizing section C, and the SC layer synthesizing section D are formed in this order. The heater 20 and the supply port 13 are provided with the same configuration and the same arrangement, and the heater 21 and the supply port 14 are also provided in the SC layer synthesis units B and D with the same configuration and the same arrangement as the previous example. It is provided. A partition member 22 similar to that in the previous example is provided between the sub-chambers, and a gap C between the partition members 22 is also shielded by a shielding gas partition wall in the same manner as in the previous example. Further, the tape X is sequentially transferred from the intermediate layer synthesizing section A to the sub-chamber D by the substrate moving device 15 similar to the previous example.
【００２９】本例の本例のＳＣ体の製造装置５１にあっ
ては、上記構成としたので、先の例の製造装置１１と同
様の効果に加えて、図７に示す基板１、中間層２、ＳＣ
膜層３よりなる酸化超電導体のＳＣ膜層３上に更に中間
層２ａ更にその上にＳＣ層３ａを積層した、図６に示す
ようなＳＣ体を製造することができる。Since the SC body manufacturing apparatus 51 of the present example has the above-mentioned configuration, in addition to the same effects as the manufacturing apparatus 11 of the previous example, the substrate 1 and the intermediate layer shown in FIG. 2, SC
An SC body as shown in FIG. 6 can be manufactured in which the intermediate layer 2a and the SC layer 3a are further laminated on the SC film layer 3 of the oxide superconductor composed of the film layer 3.
【００３０】なお、上記ＳＣ体の中間層とＳＣ層（以
下、レイヤー）数は、先の例で示した製造装置１１を構
成する２つの合成部、およびこれら２つの合成部に付随
する各装置よりなる１つのユニットを本例のように２
つ、あるいは３つ４つと直列に連設した製造装置を用い
ることにより２つ、あるいは３つ４つというように複数
のレイヤーを有する酸化超電導体を製造することも可能
である。The number of intermediate layers and SC layers (hereinafter referred to as "layers") of the SC body is determined by the two synthesizing units that compose the manufacturing apparatus 11 shown in the above example, and the devices associated with these two synthesizing units. One unit consisting of 2 as in this example
It is also possible to manufacture an oxide superconductor having a plurality of layers such as two or three and four by using a manufacturing apparatus in which three or four are connected in series.
【００３１】また、上記のような構成の製造装置を用い
てＳＣ体を作製する際、合成部間に設けられている各仕
切部材２２に形成された隙間Ｃの遮蔽用ガスによる遮蔽
を弱くすることにより、基板上に形成される各層間の組
成に傾斜のあるＳＣ体材料（傾斜材料）を作製できる。Further, when the SC body is manufactured using the manufacturing apparatus having the above structure, the shielding of the gap C formed in each partition member 22 provided between the synthesizing parts by the shielding gas is weakened. As a result, an SC body material (gradient material) having a composition gradient between the layers formed on the substrate can be produced.
【００３２】[0032]
【実施例】図１に示した第１の例と同様のＳＣ体製造装
置を用いてＳＣ体を製造した。まず、基板移動装置１５
に厚さ０.３ｍｍのテープ状基板を設置し、ガス噴出口
２３から流量３００ml/minでアルゴンガスを噴出させる
とともに、ガス吸入口２４から上記ガス噴出口２３より
噴出されたアルゴンガスおよび供給口１３、１４から噴
出されたガスを吸入させた。EXAMPLE An SC body was manufactured using the same SC body manufacturing apparatus as in the first example shown in FIG. First, the substrate moving device 15
A tape-shaped substrate having a thickness of 0.3 mm is installed in the chamber, and the argon gas is ejected from the gas ejection port 23 at a flow rate of 300 ml / min, and the argon gas ejected from the gas ejection port 24 and the supply port are supplied. The gas ejected from 13 and 14 was inhaled.
【００３３】次に、気化装置１８を作動させてＳｒおよ
びＴｉよりなる中間層原料ガスと酸素との混合ガスを供
給管１３から噴出させ、同時にヒータ２０のスイッチを
入れて噴出混合ガスを加熱し、テープＸ上にＳｒＴｉＯ
3よりなる膜厚０.５μｍの中間層を化学蒸着させた。さ
らに基板移動装置１５を操作してテープＸを中間層合成
部ＡからＳＣ層合成部Ｂの方向に１cm/minの速度で移送
し、ローラ１５Ａから同様の速度で順次テープＸを送出
させるとともに中間層を形成したテープＸはＳＣ層合成
部Ｂ内に移送した。同時に気化装置１９を作動させ、Ｙ
（ＤＰＭ）3とＢａ（ＤＰＭ）2とＣｕ（ＤＰＭ）2とか
らなる超電導体原料ガスと酸素との混合ガスを供給口１
４から噴出させ、ヒータ２１のスイッチを入れて供給口
１４からの噴出混合ガスを加熱し、先の中間層合成部Ａ
内でテープＸ上に形成した中間層上にＳＣ層を５μｍの
膜厚となるように化学蒸着した。さらに、基板移動装置
１５を操作してＳＣ層を成膜し終えて作製されたＳＣ体
をローラ１５Ｂに順次巻取った。上記一連の操作により
図７に示すような基板１、中間層２、ＳＣ膜層３よりな
るＳＣ体を製造した。なお、得られたＳＣ体の臨界電流
密度は、約８０Ａ／ｃｍ2であった。Next, the vaporizer 18 is operated to eject the mixed gas of the intermediate layer raw material gas of Sr and Ti and oxygen from the supply pipe 13, and at the same time, the heater 20 is turned on to heat the ejected mixed gas. , SrTiO on tape X
A 0.5 μm thick intermediate layer of 3 was chemically vapor deposited. Further, by operating the substrate moving device 15, the tape X is transferred from the intermediate layer synthesizing section A to the SC layer synthesizing section B at a speed of 1 cm / min, and the tape X is sequentially sent out from the roller 15A at the same speed and at the same time. The layered tape X was transferred into the SC layer synthesizing section B. At the same time, the vaporizer 19 is activated, and Y
Supply port 1 is a mixed gas of superconductor raw material gas consisting of (DPM) 3 , Ba (DPM) 2 and Cu (DPM) 2 and oxygen.
4, the heater 21 is turned on to heat the mixed gas ejected from the supply port 14, and the intermediate layer synthesizing section A
An SC layer was chemically vapor-deposited on the intermediate layer formed on the tape X so that the film thickness was 5 μm. Furthermore, the substrate moving device 15 was operated to complete the formation of the SC layer, and the SC body produced was sequentially wound around the roller 15B. Through the above series of operations, an SC body including the substrate 1, the intermediate layer 2 and the SC film layer 3 as shown in FIG. 7 was manufactured. The critical current density of the obtained SC body was about 80 A / cm 2 .
【００３４】[0034]
【発明の効果】以上述べたように、本発明のＳＣ体の製
造方法にあっては、中間層を化学蒸着法により形成する
第１の工程と、該中間層上にＳＣ層を化学蒸着法により
蒸着する第２の工程を連続的に行う構成としたので、製
造工程は簡略化される。As described above, in the method for producing an SC body of the present invention, the first step of forming the intermediate layer by the chemical vapor deposition method and the chemical vapor deposition method for forming the SC layer on the intermediate layer are performed. Since the second step of vapor deposition is continuously performed, the manufacturing process is simplified.
【００３５】また、基材上に中間層が形成する工程と、
該中間層上にＳＣ層を成膜する工程が同一チャンバ内で
なされるため、従来のように中間層とＳＣ層とを各々別
装置で成膜していた時のように、第１の装置から第２の
装置へ入れ換える際の時間ロスがなくなる。従って、こ
のロス時間中の温度変化、機械的ひずみ、湿気等に起因
する中間層の劣化が防止され、これにより既述したよう
な中間層の効果を十分発揮し得る良好な中間層を形成す
ることができる。また、成膜速度が速いので長尺の基材
に適用可能である。A step of forming an intermediate layer on the substrate,
Since the step of depositing the SC layer on the intermediate layer is carried out in the same chamber, the first apparatus is used as in the case where the intermediate layer and the SC layer are separately deposited by the conventional apparatus. There is no time loss when switching from the second device to the second device. Therefore, deterioration of the intermediate layer due to temperature change during this loss time, mechanical strain, moisture, etc. is prevented, thereby forming a good intermediate layer that can sufficiently exert the effect of the intermediate layer as described above. be able to. Further, since the film forming speed is high, it can be applied to a long base material.
【図１】 本発明のＳＣ体の製造装置の第１の例を示す
図である。FIG. 1 is a diagram showing a first example of an SC body manufacturing apparatus of the present invention.
【図２】 図１中符号１９で示される気化装置の一例を
示す図である。FIG. 2 is a diagram showing an example of a vaporization device indicated by reference numeral 19 in FIG.
【図３】 図１中符号１９で示される気化装置の他の例
を示す図である。FIG. 3 is a diagram showing another example of the vaporization device indicated by reference numeral 19 in FIG.
【図４】 図１に示す製造装置の変形例を示す図であ
る。FIG. 4 is a diagram showing a modification of the manufacturing apparatus shown in FIG.
【図５】 本発明のＳＣ体の製造装置の第２の例を示す
図である。FIG. 5 is a diagram showing a second example of the SC body manufacturing apparatus of the present invention.
【図６】 図５に示したＳＣ体の製造装置５１により作
製されるＳＣ体の断面図を示す図である。6 is a diagram showing a cross-sectional view of an SC body manufactured by the SC body manufacturing apparatus 51 shown in FIG.
【図７】 図１に示したＳＣ体の製造装置１１により作
製されるＳＣ体の断面図を示す図である。7 is a diagram showing a cross-sectional view of an SC body manufactured by the SC body manufacturing apparatus 11 shown in FIG.
【図８】 従来のＳＣ体の製造方法を示す図である。FIG. 8 is a diagram showing a conventional SC body manufacturing method.
１，Ｘ…テープ状基板、２，２ａ…中間層、３，３ａ…
ＳＣ層、１１，５１…ＳＣ体製造装置、１２，５２…チ
ャンバ、１３，１４…供給口、１８，１９…気化装置、
２１，２４…ヒータ、２２…仕切部材1, X ... Tape substrate, 2, 2a ... Intermediate layer, 3, 3a ...
SC layer, 11, 51 ... SC body manufacturing apparatus, 12, 52 ... Chamber, 13, 14 ... Supply port, 18, 19 ... Vaporization apparatus,
21, 24 ... Heater, 22 ... Partition member
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｈ０１Ｂ 12/06 ＺＡＡ 8936−5Ｇ (72)発明者 香川 昭 東京都江東区木場一丁目５番１号 藤倉電 線株式会社内 (72)発明者 佐治 明 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内 (72)発明者 黒田 昇 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内 (72)発明者 吉田 弘 愛知県名古屋市緑区大高町字北関山20番地 の１ 中部電力株式会社電力技術研究所内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location // H01B 12/06 ZAA 8936-5G (72) Inventor Akira Kagawa 1-5 Kiba, Koto-ku, Tokyo No. 1 in Fujikura Electric Wire Co., Ltd. (72) Inventor Akira Saji 1 at 20 Kitakanzan, Otaka-cho, Midori-ku, Nagoya-shi, Aichi Chubu Electric Power Co., Inc. Electric Power Technology Laboratory (72) Inventor Noboru Kuroda Nagoya, Aichi Chubu Electric Power Co., Inc., 20-20, Kitakanyama, Odaka-cho, Midori-ku, Chubu Electric Power Co., Inc. (72) Inventor Hiroshi Yoshida 1-Chubu Electric Power Co., Ltd., 1-20, Kita-kanyama, Otaka-machi, Midori-ku, Nagoya In the laboratory
Claims (3)
方側に移動させつつ、該チャンバ内に酸化物超電導体を
構成する各元素の化合物を気化させた原料ガスを導入
し、化学蒸着法を用いて該基板上に酸化物超電導体層を
蒸着する酸化物超電導体の製造方法において、基板上
に、該基板と酸化物超電導体層間の成分移動を阻止する
材料からなる中間層を化学蒸着法により形成する第１の
工程と、次いで該中間層上に酸化物超電導体層を化学蒸
着法により蒸着する第２の工程とを同一チャンバ内で連
続的に行うことを特徴とする酸化物超電導体の製造方
法。1. A chemical vapor deposition method, in which a long substrate provided in a chamber is moved to one side, and a source gas obtained by vaporizing a compound of each element forming an oxide superconductor is introduced into the chamber. In the method for producing an oxide superconductor, which comprises depositing an oxide superconductor layer on the substrate using a chemical method, an intermediate layer made of a material that prevents a component transfer between the substrate and the oxide superconductor layer is chemically formed on the substrate. An oxide characterized in that a first step of forming by an evaporation method and a second step of subsequently forming an oxide superconductor layer on the intermediate layer by a chemical vapor deposition method are continuously performed in the same chamber. Superconductor manufacturing method.
動可能に設けられた長尺の基板と、該基板と酸化物超電
導体層間の成分移動を阻止する材料からなる中間層を化
学蒸着法により形成する原料ガスを該チャンバ内に供給
する第１の供給口と、中間層上に酸化物超電導体層を化
学蒸着法により蒸着する原料ガスを該チャンバ内に供給
する第２の供給口とが配置され、かつ該第１の供給口に
接続された中間層形成用ガス供給手段と、該第２の供給
口に接続された酸化物超電導層形成用ガス供給手段とを
備え、上記第１の供給口が、チャンバ内の該基板の移動
方向前方側に位置し、上記第２の供給口が後方側に位置
するようにしたことを特徴とする酸化物超電導体の製造
装置。2. A chemical vapor deposition method comprising: a chamber; a long substrate movably provided in the chamber in one direction; and an intermediate layer made of a material that prevents component movement between the substrate and an oxide superconductor layer. And a second supply port for supplying a source gas for forming an oxide superconductor layer on the intermediate layer by a chemical vapor deposition method into the chamber. And a gas supply unit for forming an intermediate layer connected to the first supply port and a gas supply unit for forming an oxide superconducting layer connected to the second supply port. Is located on the front side in the moving direction of the substrate in the chamber, and the second supply port is located on the rear side.
供給口との間に、該第１の供給口側と、該第２の供給口
側との各々の雰囲気の混合を阻止するための遮蔽手段を
設けたことを特徴とする請求項２記載の酸化物超電導体
の製造装置。3. A mixture of the respective atmospheres of the first supply port side and the second supply port side is prevented between the first supply port and the second supply port in the chamber. 3. The apparatus for producing an oxide superconductor according to claim 2, further comprising a shielding means for controlling the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3220994A JP2953826B2 (en) | 1991-08-06 | 1991-08-06 | Method and apparatus for manufacturing oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3220994A JP2953826B2 (en) | 1991-08-06 | 1991-08-06 | Method and apparatus for manufacturing oxide superconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0543396A true JPH0543396A (en) | 1993-02-23 |
| JP2953826B2 JP2953826B2 (en) | 1999-09-27 |
Family
ID=16759805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3220994A Expired - Fee Related JP2953826B2 (en) | 1991-08-06 | 1991-08-06 | Method and apparatus for manufacturing oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2953826B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822557A (en) * | 1986-02-28 | 1989-04-18 | Hitachi, Ltd. | Emergency reactor core cooling structure |
| US4859401A (en) * | 1985-08-14 | 1989-08-22 | Hitachi, Ltd. | Nuclear reactor |
| JP2006513553A (en) * | 2002-07-26 | 2006-04-20 | メトル、アクサイド、テクナラジズ、インク | Superconducting material on tape substrate |
| JP2010157440A (en) * | 2008-12-26 | 2010-07-15 | Toshiba Corp | Oxide superconductor, and method for reducing ac loss of oxide superconductor |
| JP2011060769A (en) * | 2002-07-26 | 2011-03-24 | Metal Oxide Technologies Inc | Method and apparatus for superconductive material on tape substrate |
| JP2011117045A (en) * | 2009-12-04 | 2011-06-16 | Furukawa Electric Co Ltd:The | Cvd apparatus and method for forming superconductive thin film |
| JP2014152358A (en) * | 2013-02-07 | 2014-08-25 | Furukawa Electric Co Ltd:The | Cvd device and film forming method for superconducting thin film |
-
1991
- 1991-08-06 JP JP3220994A patent/JP2953826B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4859401A (en) * | 1985-08-14 | 1989-08-22 | Hitachi, Ltd. | Nuclear reactor |
| US4822557A (en) * | 1986-02-28 | 1989-04-18 | Hitachi, Ltd. | Emergency reactor core cooling structure |
| JP2006513553A (en) * | 2002-07-26 | 2006-04-20 | メトル、アクサイド、テクナラジズ、インク | Superconducting material on tape substrate |
| JP2011060769A (en) * | 2002-07-26 | 2011-03-24 | Metal Oxide Technologies Inc | Method and apparatus for superconductive material on tape substrate |
| JP2010157440A (en) * | 2008-12-26 | 2010-07-15 | Toshiba Corp | Oxide superconductor, and method for reducing ac loss of oxide superconductor |
| JP2011117045A (en) * | 2009-12-04 | 2011-06-16 | Furukawa Electric Co Ltd:The | Cvd apparatus and method for forming superconductive thin film |
| JP2014152358A (en) * | 2013-02-07 | 2014-08-25 | Furukawa Electric Co Ltd:The | Cvd device and film forming method for superconducting thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2953826B2 (en) | 1999-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08319569A (en) | Cvd reaction chamber and production of oxide superconductor | |
| JPH0543396A (en) | Production of oxide superconductor and production device therefor | |
| US20040178175A1 (en) | Atomic layer deposition for high temperature superconductor material synthesis | |
| JP3741860B2 (en) | Manufacturing apparatus and manufacturing method of oxide superconducting conductor | |
| JP3771143B2 (en) | Manufacturing method of oxide superconductor | |
| JP3822077B2 (en) | Manufacturing method of oxide superconductor tape wire and oxide superconductor tape wire | |
| US20060216407A1 (en) | Method of and apparatus for manufacturing tape-formed oxide superconductor | |
| JP3392299B2 (en) | Raw material solution vaporizer for CVD | |
| JP3913314B2 (en) | Liquid material supply device for CVD | |
| JP3276277B2 (en) | Liquid material supply device for CVD | |
| JP4034052B2 (en) | Manufacturing method of oxide superconductor | |
| JP3221952B2 (en) | Source gas generator for CVD | |
| JP3741816B2 (en) | Manufacturing method of oxide superconducting tape wire | |
| JP3880708B2 (en) | Manufacturing apparatus and manufacturing method of oxide superconductor | |
| JP3756322B2 (en) | Manufacturing apparatus and manufacturing method of oxide superconducting conductor | |
| JP3342785B2 (en) | Apparatus and method for producing oxide superconducting conductor | |
| JP3187043B2 (en) | Method for producing oxide superconductor by physical vapor deposition | |
| JP2547784B2 (en) | Method of forming superconducting thin film | |
| JP3285897B2 (en) | Method and apparatus for vaporizing CVD raw material for producing oxide superconductor | |
| JP3285898B2 (en) | Vaporizer of CVD raw material for oxide superconductor production | |
| JP2575442B2 (en) | Method for producing oxide-based superconducting wire | |
| JP2611332B2 (en) | Manufacturing method of thin film superconductor | |
| JP4112314B2 (en) | Oxide superconducting conductor manufacturing liquid material supply device for CVD reactor and oxide superconducting conductor manufacturing method | |
| JP2527790B2 (en) | Equipment for manufacturing long oxide superconducting materials | |
| JP3415862B2 (en) | CVD raw material vaporizer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990622 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070716 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080716 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090716 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090716 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100716 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110716 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |