JPH0543389A - Production of substrate having diamond thin film on surface - Google Patents
Production of substrate having diamond thin film on surfaceInfo
- Publication number
- JPH0543389A JPH0543389A JP21802391A JP21802391A JPH0543389A JP H0543389 A JPH0543389 A JP H0543389A JP 21802391 A JP21802391 A JP 21802391A JP 21802391 A JP21802391 A JP 21802391A JP H0543389 A JPH0543389 A JP H0543389A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- thin film
- diamond thin
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、表面にダイヤモンド
薄膜を有する基材の製造法に関するものである。表面に
ダイヤモンド薄膜を有する基材は、例えば、切削工具、
精密機構の部品、耐摩耗性部品等として広い用途が期待
されている。またプレート状の基材の表面にダイヤモン
ド薄膜を設けたものは、遠赤外線を良く吸収するので、
急速解凍プレート等として利用されている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a substrate having a diamond thin film on its surface. The base material having a diamond thin film on the surface is, for example, a cutting tool,
A wide range of applications are expected as parts for precision mechanisms, wear-resistant parts, etc. In addition, since a plate-shaped substrate provided with a diamond thin film on its surface absorbs far infrared rays well,
It is used as a quick thaw plate.
【0002】[0002]
【従来の技術】表面にダイヤモンド薄膜を有する基材の
製造法としては、プラズマ気相成長法がある。これはメ
タンガスのような炭素化合物と水素を混合した原料ガス
にマイクロ波を当ててプラズマ状態にし、加熱した基材
の表面に少しずつ結晶化する方法である。この方法は、
一般に低温ではダイヤモンド結晶の成長が悪く、アモル
ファス(非晶質)の炭素が不純物として出てくるため、
純度の高いダイヤモンド結晶を得るためには750〜9
50℃、純度を犠牲にしても400〜500℃にする必
要があった。2. Description of the Related Art As a method for producing a substrate having a diamond thin film on its surface, there is a plasma vapor deposition method. This is a method in which a raw material gas such as methane gas mixed with hydrogen is irradiated with microwaves to form a plasma state, and the surface of a heated substrate is gradually crystallized. This method
Generally, at low temperatures, diamond crystals grow poorly, and amorphous carbon appears as impurities.
750-9 to obtain high-purity diamond crystals
It was necessary to set the temperature to 50 ° C and 400 to 500 ° C even if the purity was sacrificed.
【0003】しかしながら、セラミックとか金属とかの
基材は、ダイヤモンドとは熱膨張係数が異なるため、上
記のように高温の基材上に形成されたダイヤモンド薄膜
は、冷却して常温に戻す際に付着面に応力を生じ、付着
強度が小さくなるという欠点がある。However, since the base material such as ceramic or metal has a different thermal expansion coefficient from that of diamond, the diamond thin film formed on the high temperature base material as described above adheres when it is cooled and returned to room temperature. There is a drawback that stress is generated on the surface and the adhesion strength becomes small.
【0004】[0004]
【発明が解決しようとする課題】本発明は上記のような
問題点を解決し、基材の表面に付着強度が高いダイヤモ
ンド薄膜を形成させる方法を提供することを目的とす
る。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide a method for forming a diamond thin film having high adhesion strength on the surface of a substrate.
【0005】[0005]
【0006】本発明にかかわる表面にダイヤモンド薄膜
を有する基材の製造法は、ダイヤモンド微粉末よりなる
ターゲットにイオンビームを照射してダイヤモンド微粉
末をスパッタし、スパッタされたダイヤモンド微粉末を
不活性ガスのプラズマ中を通過させてから基材の表面に
打ち込むことを特徴とする。The method for producing a base material having a diamond thin film on the surface according to the present invention is as follows: A target made of diamond fine powder is irradiated with an ion beam to sputter the diamond fine powder, and the sputtered diamond fine powder is treated with an inert gas. It is characterized in that it is passed through the plasma of and then driven into the surface of the substrate.
【0007】これを添付図面により説明すると、ターゲ
ットホルダー1に収納されたダイヤモンド微粉末2より
なるターゲットに、イオン源3で発生したイオンビーム
4を照射してダイヤモンド微粉末2をスパッタし、スパ
ッタされたダイヤモンド微粉末を、プラス電極5及びマ
イナス電極6との間に発生させた不活性ガスのプラズマ
7中を通過させてから基材8の表面に打ち込む。This will be described with reference to the accompanying drawings. A target made of diamond fine powder 2 housed in a target holder 1 is irradiated with an ion beam 4 generated from an ion source 3 to sputter the diamond fine powder 2 and sputter it. The diamond fine powder is passed through the plasma 7 of the inert gas generated between the plus electrode 5 and the minus electrode 6, and then is injected onto the surface of the base material 8.
【0008】ダイヤモンド微粉末としては、粒子径1ミ
クロン(μm)以下のもの、好ましくは0.5ミクロン
以下のものを用いることが望ましい。As fine diamond powder, it is desirable to use one having a particle diameter of 1 micron (μm) or less, preferably 0.5 micron or less.
【0009】イオンビーム発生装置としては市販の装置
を使用できる。A commercially available device can be used as the ion beam generator.
【0010】不活性ガスのプラズマは、装置内に5〜1
0mmHg程度の圧力のNe(ネオン),CO2 (炭酸
ガス),N2 (窒素),Ar(アルゴン)のような不活
性ガスを充填し、電極間に1〜2KV/cm(電極間距
離)程度の電圧をかけることにより発生する。電極間の
距離は基材の大きさに応じて定めれば良く、それによっ
て電極間の電圧も定まる。上記ガスの中では、処理温度
を低くできる点でNeが最も好ましい。The plasma of the inert gas is 5 to 1 in the apparatus.
An inert gas such as Ne (neon), CO 2 (carbon dioxide gas), N 2 (nitrogen), Ar (argon) having a pressure of about 0 mmHg is filled, and the distance between the electrodes is 1 to 2 KV / cm (distance between the electrodes). It is generated by applying a certain voltage. The distance between the electrodes may be determined according to the size of the base material, and thus the voltage between the electrodes is also determined. Among the above gases, Ne is most preferable because it can lower the processing temperature.
【0011】基材としては、シリカ、アルミナ等のセラ
ミック、ステンレススチール等で、処理温度に対する耐
熱性のあるものを使用する。As the base material, ceramics such as silica and alumina, stainless steel and the like, which have heat resistance to the processing temperature, are used.
【0012】処理温度は400〜1000℃とするのが
適当である。A treatment temperature of 400 to 1000 ° C. is suitable.
【0013】またターゲットをプラス極、基材をマイナ
ス極として30〜50KV程度の電圧をかける。A voltage of about 30 to 50 KV is applied with the target as a positive electrode and the substrate as a negative electrode.
【0014】ターゲットよりスパッタされたダイヤモン
ド微粉末は、不活性ガスのプラズマ中を通過させること
によりそれ自身プラズマ化された状態でイオンビームと
共に基材に衝突するので、ダイヤモンド微粉末は単に基
材の表面に付着した状態ではなく、基材の中に一部埋め
込まれた状態で薄膜を形成するので、付着強度は著しく
向上する。The diamond fine powder sputtered from the target impinges on the base material together with the ion beam in the state of being converted into plasma by passing through the plasma of the inert gas, so the diamond fine powder is merely the base material. Since the thin film is formed not in a state of being attached to the surface but in a state of being partially embedded in the substrate, the adhesive strength is remarkably improved.
【0015】[0015]
【発明の効果】表面に、付着強度が高いダイヤモンド薄
膜を有する基材を製造することができる。EFFECTS OF THE INVENTION It is possible to manufacture a substrate having a diamond thin film with high adhesion strength on the surface.
【図1】本発明を実施するための基本的装置構成を説明
するための図である。FIG. 1 is a diagram for explaining a basic device configuration for carrying out the present invention.
Claims (1)
にイオンビームを照射してダイヤモンド微粉末をスパッ
タし、スパッタされたダイヤモンド微粉末を不活性ガス
のプラズマ中を通過させてから基材の表面に打ち込むこ
とを特徴とする表面にダイヤモンド薄膜を有する基材の
製造法。1. A target made of fine diamond powder is irradiated with an ion beam to sputter the fine diamond powder, and the sputtered fine diamond powder is passed through a plasma of an inert gas and then implanted into the surface of the base material. A method for producing a base material having a diamond thin film on the surface thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03218023A JP3085414B2 (en) | 1991-08-05 | 1991-08-05 | Manufacturing method of substrate with diamond thin film on its surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03218023A JP3085414B2 (en) | 1991-08-05 | 1991-08-05 | Manufacturing method of substrate with diamond thin film on its surface |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0543389A true JPH0543389A (en) | 1993-02-23 |
JP3085414B2 JP3085414B2 (en) | 2000-09-11 |
Family
ID=16713424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP03218023A Expired - Fee Related JP3085414B2 (en) | 1991-08-05 | 1991-08-05 | Manufacturing method of substrate with diamond thin film on its surface |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3085414B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310728B1 (en) | 1998-06-19 | 2001-10-30 | Canon Kabushiki Kaisha | Image viewing apparatus |
-
1991
- 1991-08-05 JP JP03218023A patent/JP3085414B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6310728B1 (en) | 1998-06-19 | 2001-10-30 | Canon Kabushiki Kaisha | Image viewing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP3085414B2 (en) | 2000-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |