JP2524548B2 - Method for producing base material having diamond film on surface - Google Patents
Method for producing base material having diamond film on surfaceInfo
- Publication number
- JP2524548B2 JP2524548B2 JP3318583A JP31858391A JP2524548B2 JP 2524548 B2 JP2524548 B2 JP 2524548B2 JP 3318583 A JP3318583 A JP 3318583A JP 31858391 A JP31858391 A JP 31858391A JP 2524548 B2 JP2524548 B2 JP 2524548B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- base material
- thin film
- plasma
- fine powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は、表面にダイヤモンド
薄膜を有する基材の製造法に関するものである。表面に
ダイヤモンド薄膜を有する基材は、例えば、切削工具、
精密機構の部品、耐摩耗性部品等として広い用途が期待
されている。またプレート状の基材の表面にダイヤモン
ド薄膜を設けたものは、遠赤外線を良く吸収するので、
急速解凍プレート等として利用されている。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a substrate having a diamond thin film on its surface. The base material having a diamond thin film on the surface is, for example, a cutting tool,
It is expected to have a wide range of uses as parts for precision mechanisms, wear-resistant parts, etc. In addition, since a plate-shaped substrate provided with a diamond thin film on its surface absorbs far infrared rays well,
It is used as a quick thaw plate.
【０００２】[0002]
【従来の技術】表面にダイヤモンド薄膜を有する基材の
製造法としては、プラズマ気相成長法がある。これはメ
タンガスのような炭素化合物と水素を混合した原料ガス
にマイクロ波を当ててプラズマ状態にし、加熱した基材
の表面に少しずつ結晶化する方法である。この方法は、
一般に低温ではダイヤモンド結晶の成長が悪く、アモル
ファス（非晶質）の炭素が不純物として出てくるため、
純度の高いダイヤモンド結晶を得るためには７５０〜９
５０℃、純度を犠牲にしても４００〜５００℃にする必
要があった。2. Description of the Related Art A plasma vapor deposition method is known as a method for producing a substrate having a diamond thin film on its surface. This is a method in which a raw material gas such as methane gas mixed with hydrogen is irradiated with microwaves to form a plasma state, and the surface of a heated substrate is gradually crystallized. This method
Generally, diamond crystals grow poorly at low temperatures, and amorphous carbon appears as impurities.
750-9 for obtaining high-purity diamond crystals
It was necessary to set the temperature to 50 ° C and 400 to 500 ° C even if the purity was sacrificed.
【０００３】しかしながら、セラミックとか金属とかの
基材は、ダイヤモンドとは熱膨張係数が異なるため、上
記のように高温の基材上に形成されたダイヤモンド薄膜
は、冷却して常温に戻す際に付着面に応力を生じ、付着
強度が小さくなるという欠点がある。However, since a ceramic or metal base material has a different coefficient of thermal expansion from diamond, the diamond thin film formed on the high temperature base material as described above adheres when it is cooled and returned to room temperature. There is a drawback that stress is generated on the surface and the adhesion strength becomes small.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上記のような
問題点を解決し、基材の表面に付着強度が高いダイヤモ
ンド薄膜を形成させる方法を提供することを目的とす
る。SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to provide a method for forming a diamond thin film having high adhesion strength on the surface of a substrate.
【０００５】[0005]
【課題を解決するための手段】本発明にかかわる表面に
ダイヤモンド薄膜を有する基材の製造法は、第１段階と
してダイヤモンド微粉末よりなるターゲットにイオンビ
ームを照射してダイヤモンド微粉末をスパッタし、スパ
ッタされたダイヤモンド微粉末を不活性ガスのプラズマ
中を通過させてから基材の表面に打ち込むことにより基
材の表面にダイヤモンド薄膜を形成させた後、更に第２
段階としてプラズマ気相成長法によりダイヤモンドを前
記ダイヤモンド薄膜上に蒸着させることを特徴とする。The method for producing a substrate having a diamond thin film on the surface according to the present invention comprises, as a first step, irradiating an ion beam on a target made of diamond fine powder to sputter the diamond fine powder, After the sputtered diamond fine powder is passed through the plasma of an inert gas and then bombarded on the surface of the base material to form a diamond thin film on the surface of the base material, the second thin film is further formed.
The step is characterized in that diamond is deposited on the diamond thin film by plasma vapor deposition.
【０００６】第１段階を添付図面により説明すると、タ
ーゲットホルダー１に収納されたダイヤモンド微粉末２
よりなるターゲットに、イオン源３で発生したイオンビ
ーム４を照射してダイヤモンド微粉末２をスパッタし、
スパッタされたダイヤモンド微粉末を、プラス電極５及
びマイナス電極６との間に発生させた不活性ガスのプラ
ズマ７中を通過させてから基材８の表面に打ち込む。The first stage will be described with reference to the accompanying drawings. The fine diamond powder 2 contained in the target holder 1
The target made of is irradiated with the ion beam 4 generated by the ion source 3 to sputter the diamond fine powder 2,
The sputtered diamond fine powder is passed through the plasma 7 of the inert gas generated between the plus electrode 5 and the minus electrode 6, and then is injected onto the surface of the base material 8.
【０００７】ダイヤモンド微粉末としては、粒子径１ミ
クロン（μｍ）以下のもの、好ましくは０．５ミクロン
以下のものを用いることが望ましい。As the fine diamond powder, it is desirable to use one having a particle diameter of 1 micron (μm) or less, preferably 0.5 micron or less.
【０００８】イオンビーム発生装置としては市販の装置
を使用できる。A commercially available device can be used as the ion beam generator.
【０００９】不活性ガスのプラズマは、装置内に５〜１
０ｍｍＨｇ程度の圧力のＡｒ（アルゴン），Ｎｅ（ネオ
ン），ＣＯ2 （炭酸ガス），Ｎ2 （窒素）のような不活
性ガスを充填し、電極間に１〜２ＫＶ／ｃｍ（電極間距
離）程度の電圧をかけることにより発生する。電極間の
距離は基材の大きさに応じて定めれば良く、それによっ
て電極間の電圧も定まる。上記ガスの中では、処理温度
を低くできる点でＡｒ（アルゴン）が最も好ましい。The plasma of the inert gas is 5 to 1 in the apparatus.
An inert gas such as Ar (argon), Ne (neon), CO 2 (carbon dioxide gas), N 2 (nitrogen) having a pressure of about 0 mmHg is filled, and the distance between the electrodes is 1 to 2 KV / cm (distance between the electrodes). It is generated by applying a certain voltage. The distance between the electrodes may be determined according to the size of the base material, and thus the voltage between the electrodes is also determined. Among the above gases, Ar (argon) is most preferable because it can lower the processing temperature.
【００１０】基材としては、シリカ、アルミナ等のセラ
ミック、ステンレススチール等で、処理温度に対する耐
熱性のあるものを使用する。As the base material, ceramics such as silica and alumina, stainless steel and the like, which have heat resistance to the processing temperature, are used.
【００１１】処理温度は４００〜７００℃とするのが適
当である。A treatment temperature of 400 to 700 ° C. is suitable.
【００１２】またターゲットをプラス極、基材をマイナ
ス極として３０〜５０ＫＶ程度の電圧をかける。A voltage of about 30 to 50 KV is applied with the target as a positive electrode and the substrate as a negative electrode.
【００１３】ターゲットよりスパッタされたダイヤモン
ド微粉末は、不活性ガスのプラズマ中を通過させること
によりそれ自身プラズマ化された状態でイオンビームと
共に基材に衝突するので、ダイヤモンド微粉末は単に基
材の表面に付着した状態ではなく、基材の中に一部埋め
込まれた状態で薄膜を形成するので、付着強度は著しく
向上する。The diamond fine powder sputtered from the target impinges on the base material together with the ion beam in the state of being converted into plasma by passing through the plasma of the inert gas, and therefore the diamond fine powder is merely the base material. Since the thin film is formed not in a state of being attached to the surface but in a state of being partially embedded in the substrate, the adhesive strength is remarkably improved.
【００１４】第２段階として、上記の方法により基材上
に形成されたダイヤモンド薄膜上にさらにプラズマ気相
成長法によりダイヤモンドを蒸着させる。このプラズマ
気相成長法は従来技術に準じて行うことができるが、本
発明の場合は、表面に既にダイヤモンド薄膜が形成され
た基材を用いるので、４００〜５００℃と言う比較的低
温でも純度の高いダイヤモンド膜を成長させることがで
きる。また付着強度の高いダイヤモンド薄膜上に更にダ
イヤモンドを成長させた膜なので高い付着強度が維持さ
れる。In the second step, diamond is further vapor-deposited by plasma vapor deposition on the diamond thin film formed on the substrate by the above method. This plasma vapor deposition method can be carried out in accordance with the prior art, but in the case of the present invention, since the base material on which the diamond thin film has already been formed is used, the purity is maintained even at a relatively low temperature of 400 to 500 ° C. It is possible to grow a high diamond film. Further, since the diamond thin film having high adhesion strength is further grown with diamond, high adhesion strength is maintained.
【００１５】プラズマ気相成長法は、水素のほか、ネオ
ン、アルゴン、二酸化炭素のようなガス雰囲気下で実施
される。The plasma vapor deposition method is carried out in a gas atmosphere such as neon, argon or carbon dioxide in addition to hydrogen.
【００１６】プラズマ気相成長法ではダイヤモンドとな
る炭素の供給源として、メタン、エタン、ブタン、プロ
パン、アルコール等の単価の安い炭化水素を使用するの
で、低コストでダイヤモンド膜を成長させることができ
る。In the plasma vapor phase epitaxy method, a hydrocarbon having a low unit price such as methane, ethane, butane, propane and alcohol is used as a carbon source for diamond, so that the diamond film can be grown at a low cost. .
【００１７】[0017]
【発明の効果】表面に付着強度が高いダイヤモンド膜を
有する基材を製造することができる。また単価の安い原
料を併用できるので製造コストを低減できる。EFFECTS OF THE INVENTION It is possible to manufacture a substrate having a diamond film with high adhesion strength on its surface. Further, since the raw material having a low unit price can be used together, the manufacturing cost can be reduced.
【図１】本発明の第１段階を実施するための基本的装置
構成を説明する図である。FIG. 1 is a diagram illustrating a basic device configuration for carrying out a first stage of the present invention.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ３０Ｂ 25/02 Ｃ３０Ｂ 25/02 Ｐ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location C30B 25/02 C30B 25/02 P
Claims (1)
にイオンビームを照射してダイヤモンド微粉末をスパッ
タし、スパッタされたダイヤモンド微粉末を不活性ガス
のプラズマ中を通過させてから基材の表面に打ち込むこ
とにより基材の表面にダイヤモンド薄膜を形成させた
後、更にプラズマ気相成長法によりダイヤモンドを前記
ダイヤモンド薄膜上に蒸着させることを特徴とする表面
にダイヤモンド膜を有する基材の製造法。1. A target made of diamond fine powder is irradiated with an ion beam to sputter the diamond fine powder, and the sputtered diamond fine powder is passed through a plasma of an inert gas and then implanted on the surface of the base material. A method for producing a base material having a diamond film on the surface, characterized in that a diamond thin film is formed on the surface of the base material by, and then diamond is vapor-deposited on the diamond thin film by plasma vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3318583A JP2524548B2 (en) | 1991-11-07 | 1991-11-07 | Method for producing base material having diamond film on surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3318583A JP2524548B2 (en) | 1991-11-07 | 1991-11-07 | Method for producing base material having diamond film on surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05132395A JPH05132395A (en) | 1993-05-28 |
| JP2524548B2 true JP2524548B2 (en) | 1996-08-14 |
Family
ID=18100760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3318583A Expired - Lifetime JP2524548B2 (en) | 1991-11-07 | 1991-11-07 | Method for producing base material having diamond film on surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2524548B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6451176B1 (en) * | 2000-11-03 | 2002-09-17 | The Regents Of The University Of California | Electrostatic particle trap for ion beam sputter deposition |
| US8133367B1 (en) * | 2006-08-11 | 2012-03-13 | Raytheon Company | Sputtering system and method using a loose granular sputtering target |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6451396A (en) * | 1987-08-21 | 1989-02-27 | Matsushita Electric Ind Co Ltd | Device for forming thin diamond film |
| JPH01162776A (en) * | 1987-12-18 | 1989-06-27 | Fujitsu Ltd | Formation of thin film |
-
1991
- 1991-11-07 JP JP3318583A patent/JP2524548B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05132395A (en) | 1993-05-28 |
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