JPH0538927U - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH0538927U JPH0538927U JP9539591U JP9539591U JPH0538927U JP H0538927 U JPH0538927 U JP H0538927U JP 9539591 U JP9539591 U JP 9539591U JP 9539591 U JP9539591 U JP 9539591U JP H0538927 U JPH0538927 U JP H0538927U
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting element
- lead
- traveling direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
(57)【要約】
【目的】 遮光の影響をほぼ一定にしたまま放熱効果を
高めたリード部を有する発光装置を提供する。
【構成】 発光ダイオード装置９において、発光素子１
から発光された光は反射鏡６で反射され、ほぼ平行光線
束となる。このときリード部１３，１４は、この光線束
を遮る位置に配置されているので、この光線束の進行方
向に垂直な方向（図（Ｂ）の上下方向）の断面の投影部
分が斜光されるが、この光線束の進行方向に平行な方向
（図（Ａ）の上下方向）のリード部１３，１４の幅は、
大きくなっても光線束を遮る面積に影響を及ぼさない。
そこで、光線束の進行方向に平行な方向に、リード部１
３，１４の幅を広げることにより、放熱効果を高めるよ
うにすれば、光の損失を増加させることなく、高出力動
作が可能となる。
(57) [Abstract] [Purpose] To provide a light emitting device having a lead portion in which the heat radiation effect is enhanced while the influence of light shielding is substantially constant. [Structure] In a light emitting diode device 9, a light emitting element 1
The light emitted from is reflected by the reflecting mirror 6 and becomes a bundle of substantially parallel rays. At this time, since the lead portions 13 and 14 are arranged at positions that block this light beam bundle, the projected portion of the cross section in the direction perpendicular to the traveling direction of this light beam bundle (vertical direction in FIG. 1B) is obliquely illuminated. However, the width of the lead portions 13 and 14 in the direction parallel to the traveling direction of the light flux (vertical direction in FIG.
Even if it becomes large, it does not affect the area that blocks the light flux.
Therefore, in the direction parallel to the traveling direction of the bundle of rays, the lead portion 1
If the heat dissipation effect is enhanced by widening the widths of 3 and 14, high output operation can be performed without increasing light loss.
Description
【０００１】[0001]
本考案は、特に、赤外線を出力する各種リモコン装置や空間伝送を行う光通信 システム等の光源として使用するのに好適な高出力型の発光装置に関するもので ある。 The present invention particularly relates to a high-power light emitting device suitable for use as a light source for various remote control devices that output infrared rays and optical communication systems that perform spatial transmission.
【０００２】[0002]
従来より、赤外線を出力する各種リモコン装置や空間伝送を行う光通信システ ム等の光源として使用することを想定した発光装置として、反射鏡を用いた発光 ダイオード装置が考えられており、特開昭４９−８２２８７号公報等に開示され ている。 この例えば図２に示すような発光ダイオード装置８は、発光素子（発光ダイオ ードチップ）１が一辺が０．５mm角の鉄製の角柱であるリード部（アノード）３ に直接マウントされると共にボンディングワイヤ５を介して同じく一辺が０．５ mm角の角柱であるリード部（カソード）４にボンディングされており、これらア センブリがエポキシ樹脂（熱硬化性樹脂）２によって図のようにモールドされて いる。そして、発光素子１から出力される光は、エポキシ樹脂２の表面にアルミ 等の金属が蒸着されてできた反射鏡６によって反射され、この反射鏡６によって 平行に反射された光は、表面部分７から平行光として外部へ出力されることにな る。 Conventionally, a light-emitting diode device using a reflecting mirror has been considered as a light-emitting device that is supposed to be used as a light source for various remote control devices that output infrared rays and optical communication systems that perform spatial transmission. No. 49-82287. For example, in a light emitting diode device 8 as shown in FIG. 2, a light emitting element (light emitting diode chip) 1 is directly mounted on a lead portion (anode) 3 which is an iron prism having a side of 0.5 mm and a bonding wire 5 is formed. Is also bonded to a lead portion (cathode) 4 which is a prism having a side of 0.5 mm on each side, and these assemblies are molded with an epoxy resin (thermosetting resin) 2 as shown in the figure. Then, the light output from the light emitting element 1 is reflected by the reflecting mirror 6 formed by depositing a metal such as aluminum on the surface of the epoxy resin 2, and the light reflected in parallel by the reflecting mirror 6 is the surface portion. It will be output as parallel light from 7 to the outside.
【０００３】[0003]
この従来の発光ダイオード装置８は、光源となる発光素子１が反射鏡６によっ て反射される光の進行方向途中に配置されているために、この発光素子１を支持 し、電力を供給するリード部３，４が、この反射鏡６で反射された光線束に対し て障害物となっている。即ち、このリード部３，４によって反射光の一部が遮ら れ、このリード部３，４によって吸収や散乱などの損失が生じて光出力が減衰し たり、光の進行方向が大きく変化したりして、有効な光出力として外部に取り出 すことのできる光量が減衰するという問題点があった。 また、発光装置を高出力動作させる場合、発光素子１に流す電流を大きくして 発光量を増加させるが、このときに発光素子１における発熱量も増大する。そし て、この発熱により発光素子１自体の温度が上昇すると、発光特性が悪くなって 大きな光出力が得られなくなるため、リード部３，４によってこの熱を放散させ て温度上昇を防ぐ必要がある。このため、高出力動作が目的の発光装置では、放 熱器として作用するリード部３，４の断面積を大きくして、放熱効果を高める必 要がある。しかしながら、例えば、一辺が０．５mm角のリード部３，４を１mm角 のものにすると、上述したような反射型の発光装置８ではリード部３，４自体が 出力光の障害物となるので、リード部３，４の大型化は同時に光の損失を増加さ せてしまうという課題があった。 そこで本考案は、上記の課題を解決するために、光の損失を増加させずに放熱 効果を高めたリード部を有する発光装置を提供することを目的とする。 This conventional light emitting diode device 8 supports the light emitting element 1 and supplies electric power because the light emitting element 1 serving as a light source is arranged midway in the traveling direction of the light reflected by the reflecting mirror 6. The lead portions 3 and 4 are obstacles to the light flux reflected by the reflecting mirror 6. That is, a part of the reflected light is blocked by the lead portions 3 and 4, and loss such as absorption and scattering occurs due to the lead portions 3 and 4, and the optical output is attenuated, or the traveling direction of the light is greatly changed. Then, there is a problem that the amount of light that can be extracted to the outside as an effective light output is attenuated. Further, when the light emitting device is operated at a high output, the amount of light emission is increased by increasing the current passed through the light emitting element 1, but the amount of heat generated in the light emitting element 1 is also increased at this time. Then, if the temperature of the light emitting element 1 itself rises due to this heat generation, the light emission characteristics deteriorate and a large light output cannot be obtained. Therefore, it is necessary to dissipate this heat by the lead portions 3 and 4 to prevent the temperature rise. .. Therefore, in a light emitting device intended for high output operation, it is necessary to increase the cross-sectional area of the lead portions 3 and 4 acting as a heat radiator to enhance the heat radiation effect. However, for example, if the lead portions 3 and 4 each having a side of 0.5 mm square are 1 mm square, the lead portions 3 and 4 themselves become obstacles to the output light in the reflection type light emitting device 8 as described above. However, increasing the size of the lead parts 3 and 4 also increases the loss of light. SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a light emitting device having a lead portion that enhances the heat dissipation effect without increasing the loss of light.
【０００４】[0004]
上記目的を達成するための手段として、少なくとも１個の発光素子と、この発 光素子に対向して設けられた反射鏡と、前記発光素子に電力を供給するリード部 とを備える発光装置であって、前記リード部の前記反射鏡によって反射された光 線束の進行方向に垂直方向の投影幅は、前記発光素子の幅以上の大きさでかつ前 記リード部の前記光線束の進行方向に平行方向の幅よりも小さいことを特徴とす る発光装置を提供しようとするものである。 As a means for achieving the above object, there is provided a light emitting device including at least one light emitting element, a reflecting mirror provided to face the light emitting element, and a lead portion for supplying electric power to the light emitting element. The projection width of the light flux reflected by the reflecting mirror of the lead portion in the direction perpendicular to the traveling direction is larger than the width of the light emitting element and parallel to the traveling direction of the light flux of the lead portion. An object of the present invention is to provide a light emitting device characterized by being smaller than the width in the direction.
【０００５】[0005]
本考案の発光装置の一実施例を図１（Ａ），（Ｂ）と共に説明する。 同図に示す発光ダイオード装置９は、発光素子（発光ダイオードチップ）１が リード部（アノード）１３に直接マウントされると共にボンディングワイヤ５を 介してリード部（カソード）１４にボンディングされており、これらアセンブリ がエポキシ樹脂（熱硬化性樹脂）２によって図のようにモールドされている。そ して、発光素子１から出力される光は、エポキシ樹脂２の表面に金属が蒸着され てできた反射鏡６によって反射され、この反射鏡６によって平行にされた反射光 は、表面部分７から平行光として外部へ出力される。このとき、反射鏡６は回転 放物面鏡であり、発光素子１はこの回転放物面鏡である反射鏡６のおおよそ焦点 の位置に配置されている。 An embodiment of the light emitting device of the present invention will be described with reference to FIGS. In a light emitting diode device 9 shown in the figure, a light emitting element (light emitting diode chip) 1 is directly mounted on a lead portion (anode) 13 and is bonded to a lead portion (cathode) 14 via a bonding wire 5. The assembly is molded with epoxy resin (thermosetting resin) 2 as shown. Then, the light output from the light emitting element 1 is reflected by the reflecting mirror 6 formed by depositing a metal on the surface of the epoxy resin 2, and the reflected light made parallel by the reflecting mirror 6 is the surface portion 7 Is output as parallel light from the outside. At this time, the reflecting mirror 6 is a paraboloid of revolution, and the light-emitting element 1 is arranged at a position approximately at the focus of the reflecting mirror 6 which is a paraboloid of revolution.
【０００６】 このような発光ダイオード装置９において、発光素子１から発光された光は、 反射鏡６で反射され、ほぼ平行光線束となって表面部分７から出力される。この ときリード部１３，１４は、この光線束を遮る位置に配置されているので、この 光線束の進行方向に垂直な方向（図１（Ｂ）の上下方向）の断面の投影部分が遮 光され、この投影部分が大きいほど遮光性が大きくなって有効光の出力が低下す ることになる。ところが、この光線束の進行方向に平行な方向（図１（Ａ）の上 下方向）のリード部１３，１４の幅は、大きくなっても光線束を遮る面積に影響 を及ぼさない。 そこで、光線束の進行方向に平行な方向に、リード部１３，１４の幅を広げる ことにより、放熱効果を高めるようにすれば、光の損失を増加させることなく、 高出力動作が可能となる。In such a light emitting diode device 9, the light emitted from the light emitting element 1 is reflected by the reflecting mirror 6 and is output as a substantially parallel light flux from the surface portion 7. At this time, since the lead portions 13 and 14 are arranged at positions that block this light beam bundle, the projected portion of the cross section in the direction perpendicular to the traveling direction of this light beam bundle (vertical direction in FIG. 1B) blocks light. Therefore, the larger the projected portion is, the greater the light shielding property is, and the output of effective light is reduced. However, the widths of the lead portions 13 and 14 in the direction parallel to the traveling direction of the ray bundle (upper and lower directions in FIG. 1A) do not affect the area where the ray bundle is blocked even if the width increases. Therefore, by increasing the width of the lead portions 13 and 14 in the direction parallel to the traveling direction of the light flux to enhance the heat radiation effect, high output operation can be performed without increasing light loss. ..
【０００７】 具体的に説明すると、一般に発光装置に使われるリード部はプレス加工によっ て生産されるが、一般的な精密加工用プレス機の能力やプレス用材料である金属 原板の入手しやすい規格等の理由から、厚みは０．５mm前後であることが多い。 コストを考慮して、従来と同様の板厚を用いると、放熱効果を上げるには、切断 する幅を広げて使用するリードの幅を大きくする必要がある。 そこで、図１に示すこの実施例では、反射鏡６で反射される光線束の進行方向 に垂直な方向（図１（Ｂ）の上下方向）のリード部１３，１４の厚みを板厚と同 じ０．５mmとし、光線束の進行方向に平行な方向（図１（Ａ）の上下方向）のリ ード部１３，１４の幅を２mmとして、半径５mmの発光ダイオード装置９に図のよ うに配置した。このとき、同図（Ａ）において、リード部１３，１４とエポキシ 樹脂２との境界において、熱膨張率差によって亀裂が生じるのを防ぐために、リ ード部１３，１４の幅方向の上下にそれぞれ０．５mmづつの幅を設けてある。そ して、リード部１３，１４の材料として、鉄よりも軟らかい銅を使用することに より、エポキシ樹脂２に対する負荷が減少し、また、放熱効果も高くなる。More specifically, the lead portion generally used in a light emitting device is produced by press working, but the capability of a general precision press machine and the availability of a metal original plate as a press material are easy to obtain. For reasons such as standards, the thickness is often around 0.5 mm. In consideration of cost, if the same plate thickness as the conventional one is used, it is necessary to widen the width of cutting and widen the lead to be used in order to improve the heat radiation effect. Therefore, in this embodiment shown in FIG. 1, the thickness of the lead portions 13 and 14 in the direction perpendicular to the traveling direction of the light beam reflected by the reflecting mirror 6 (vertical direction in FIG. 1B) is the same as the plate thickness. The width is 0.5 mm, the width of the lead portions 13 and 14 in the direction parallel to the traveling direction of the light beam (vertical direction in FIG. 1A) is 2 mm, and the light emitting diode device 9 having a radius of 5 mm is shown in the figure. I arranged it like this. At this time, in the same figure (A), in order to prevent the occurrence of cracks at the boundaries between the lead parts 13 and 14 and the epoxy resin 2 due to the difference in the coefficient of thermal expansion, the lead parts 13 and 14 are arranged above and below in the width direction. Each has a width of 0.5 mm. By using copper, which is softer than iron, as the material of the lead portions 13 and 14, the load on the epoxy resin 2 is reduced and the heat dissipation effect is also enhanced.
【０００８】 以上のような構成とすることにより、発光素子１から発光されて反射鏡６で反 射した光線束は、前述のように焦点近傍に設けられた発光素子１（光源）に対し てほぼ平行光線となるので、リード部１３，１４による遮光の影響はリード部１ ３，１４の厚み（０．５mm）のみによるものであり、その幅（２mm）にはほとん ど影響されない。従って、リード部１３，１４の幅は、放熱効果や発光装置の大 きさなどを考慮して１〜３mm程度の必要に応じた大きさに設定することができ、 実施例に示した２mm以上の大きさでも２mm以下でも良い。また、厚みも０．５mm に限定されるものではなく、発光素子１が取け付けられる厚み以上があれば良い 。 そして、本考案の発光装置によれば、リード部による遮光の影響をほぼ一定に したままリード部による放熱効果の調節、及び改善をすることができる。With the above-described structure, the light flux emitted from the light emitting element 1 and reflected by the reflecting mirror 6 is emitted to the light emitting element 1 (light source) provided near the focal point as described above. Since the light rays are substantially parallel rays, the influence of light shielding by the lead portions 13 and 14 is due only to the thickness (0.5 mm) of the lead portions 13 and 14, and is almost not affected by the width (2 mm) thereof. Therefore, the width of the lead portions 13 and 14 can be set to a size of about 1 to 3 mm as necessary in consideration of the heat radiation effect and the size of the light emitting device. The size may be 2 mm or less. Further, the thickness is not limited to 0.5 mm as long as the light emitting element 1 can be attached to a thickness equal to or larger than the thickness. Further, according to the light emitting device of the present invention, it is possible to adjust and improve the heat radiation effect by the lead portion while keeping the influence of the light shielding by the lead portion substantially constant.
【０００９】[0009]
本考案の発光装置は、リード部を反射鏡によって反射された光線束の進行方向 に垂直方向の投影幅が発光素子の幅以上の大きさで、かつ光線束の進行方向に平 行方向の幅よりも小さくなるようにしたので、リード部による遮光の影響をほぼ 一定にしたまま放熱効果の調節、及び改善をすることができる。 また、一般に発光装置用リード部の製造に使用されている金属原板を使用して 、本考案の発光装置のリード部を生産することができるので、簡単に実施するこ とができる。 そして、リード部を大型化して放熱効果を高めたので、発光装置の温度特性が 改善され、高出力が得られるという効果がある。 In the light emitting device of the present invention, the projection width in the direction perpendicular to the traveling direction of the light beam reflected by the reflecting mirror is equal to or larger than the width of the light emitting element, and the width in the horizontal direction in the traveling direction of the light beam. Since it is smaller than the above, the heat radiation effect can be adjusted and improved while the influence of the light shielding by the lead portion is kept substantially constant. In addition, since the lead portion of the light emitting device of the present invention can be produced by using the metal original plate that is generally used for manufacturing the light emitting device lead portion, it can be easily implemented. Further, since the lead portion is enlarged to increase the heat dissipation effect, the temperature characteristics of the light emitting device are improved, and high output can be obtained.
【図１】（Ａ），（Ｂ）は本考案の発光装置の一実施例
を示す断面図及び上面図である。1A and 1B are a sectional view and a top view showing an embodiment of a light emitting device of the present invention.
【図２】従来例を示す断面図である。FIG. 2 is a sectional view showing a conventional example.
１ 発光素子（発光ダイオードチップ） ２ エポキシ樹脂（熱硬化性樹脂） ３，１３ リード部（アノード） ４，１４ リード部（カソード） ５ ボンディングワイヤ ６ 反射鏡 ７ 表面部分 ８，９ 発光ダイオード装置（発光装置） DESCRIPTION OF SYMBOLS 1 Light emitting element (light emitting diode chip) 2 Epoxy resin (thermosetting resin) 3,13 Lead part (anode) 4,14 Lead part (cathode) 5 Bonding wire 6 Reflecting mirror 7 Surface part 8,9 Light emitting diode device (light emission) apparatus)
Claims (1)
子に対向して設けられた反射鏡と、前記発光素子に電力
を供給するリード部とを備える発光装置であって、前記
リード部の前記反射鏡によって反射された光線束の進行
方向に垂直方向の投影幅は、前記発光素子の幅以上の大
きさでかつ前記リード部の前記光線束の進行方向に平行
方向の幅よりも小さいことを特徴とする発光装置。1. A light emitting device comprising at least one light emitting element, a reflecting mirror provided to face the light emitting element, and a lead section for supplying electric power to the light emitting element, the lead section comprising: The projection width of the light beam reflected by the reflecting mirror in the direction perpendicular to the traveling direction is larger than the width of the light emitting element and smaller than the width of the lead portion in the direction parallel to the traveling direction of the light beam. And a light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539591U JPH0538927U (en) | 1991-10-24 | 1991-10-24 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539591U JPH0538927U (en) | 1991-10-24 | 1991-10-24 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0538927U true JPH0538927U (en) | 1993-05-25 |
Family
ID=14136467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9539591U Pending JPH0538927U (en) | 1991-10-24 | 1991-10-24 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0538927U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004033999A1 (en) * | 2002-09-20 | 2004-04-22 | Yazaki Corporation | Dial module, manufacturing method thereof, led display element, display module, movement module, connector module, and meter using them |
| JP2006135123A (en) * | 2004-11-08 | 2006-05-25 | Opto Device Kenkyusho:Kk | High-power reflection type light emitting diode and its manufacturing method |
| WO2007125772A1 (en) * | 2006-04-26 | 2007-11-08 | Konica Minolta Opto, Inc. | Light-emitting device, light-emitting module, illuminator, and image projector |
-
1991
- 1991-10-24 JP JP9539591U patent/JPH0538927U/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004033999A1 (en) * | 2002-09-20 | 2004-04-22 | Yazaki Corporation | Dial module, manufacturing method thereof, led display element, display module, movement module, connector module, and meter using them |
| JP2006135123A (en) * | 2004-11-08 | 2006-05-25 | Opto Device Kenkyusho:Kk | High-power reflection type light emitting diode and its manufacturing method |
| WO2007125772A1 (en) * | 2006-04-26 | 2007-11-08 | Konica Minolta Opto, Inc. | Light-emitting device, light-emitting module, illuminator, and image projector |
| JP2007318066A (en) * | 2006-04-26 | 2007-12-06 | Konica Minolta Opto Inc | Light emitting device, light-emitting module, lighting apparatus, and image projection apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10514158B2 (en) | Light source device and projection device | |
| EP1249877A2 (en) | Reflective type light-emitting diode | |
| US20110216550A1 (en) | Vehicle light | |
| US20050151141A1 (en) | Luminescence diode chip | |
| JP2019036638A (en) | Light-emitting device | |
| JP2011120914A (en) | Light curing device for dental purpose | |
| WO2018212187A1 (en) | Vehicular lamp | |
| JP7410875B2 (en) | Light source units, lighting equipment, processing equipment and deflection elements | |
| JPH0538927U (en) | Light emitting device | |
| KR102568560B1 (en) | Illumination module for creating specific lateral rectangular illumination window | |
| JPWO2009119657A1 (en) | projector | |
| JP2017183300A (en) | Led light-emitting device | |
| JP4529599B2 (en) | Light emitting device and manufacturing method thereof | |
| JP7050045B2 (en) | Package, light emitting device, and laser device | |
| CN113671779B (en) | Light source device and projection device | |
| EP3875838B1 (en) | Lighting device with light guide | |
| US5426533A (en) | Apparatus for enhancing collimation and improving collection efficiency from high aspect ratio linear energy sources | |
| JPH06151975A (en) | Luminescent device | |
| JPH05243618A (en) | Light-emitting device | |
| JPH0439236B2 (en) | ||
| JP3773603B2 (en) | Manufacturing method of semiconductor laser device | |
| JP2005038870A (en) | Light emitting diode lamp | |
| JPS60182781A (en) | Semiconductor device | |
| JP3224067U (en) | Lighting module that generates a specific lateral rectangular lighting window | |
| KR101936048B1 (en) | Light emitting led module and a method for light emitting at side face |