JPH0538049Y2 - - Google Patents

Info

Publication number

JPH0538049Y2

JPH0538049Y2 JP17111088U JP17111088U JPH0538049Y2 JP H0538049 Y2 JPH0538049 Y2 JP H0538049Y2 JP 17111088 U JP17111088 U JP 17111088U JP 17111088 U JP17111088 U JP 17111088U JP H0538049 Y2 JPH0538049 Y2 JP H0538049Y2

Authority

JP

Japan

Prior art keywords

crucible

filament

magnetic field

evaporation source

source device

Prior art date

1988-12-30

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

Links

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• 238000001704 evaporation Methods 0.000 claims description 41
• 230000008020 evaporation Effects 0.000 claims description 41
• 238000003780 insertion Methods 0.000 claims description 10
• 230000037431 insertion Effects 0.000 claims description 10
• BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 claims description 6
• 239000000696 magnetic material Substances 0.000 claims description 4
• 230000005855 radiation Effects 0.000 claims description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 239000000919 ceramic Substances 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000010894 electron beam technology Methods 0.000 description 1
• 230000005389 magnetism Effects 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 238000001451 molecular beam epitaxy Methods 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 238000007738 vacuum evaporation Methods 0.000 description 1
• 239000002699 waste material Substances 0.000 description 1