JPH0536789A - Method and apparatus for burn-in - Google Patents

Abstract

PURPOSE:To control the temperature of individual semiconductor chips with good accuracy and nearly uniformly by a method wherein temperature sensors are installed in individual semiconductor devices at the semiconductor chips themselves at the inside of the semiconductor devices, the sensors are monitored and ventilation operations are turned on and off at individual ventilation ports according to monitored results. CONSTITUTION:A plurality of burn-in boards 1 are installed at the inside of a burn-in (high-temperature continuous operation) test container 6; semiconductor devices which are provided with semiconductor chips 71 to 73 at the inside are set on the boards. Integrated circuits 711 to 713 and diodes 721 to 723 for temperature detection use are formed on the semiconductor chips 71 to 73. The electric characteristic of the diodes 72 for temperature detection use is monitored individually by using a temperature detector 92. A control device 93 controls an electricity-feeding amount by an electricity-feeding device 91 and the on/off operation of ventilation operations from ventilation ports 83a to 83c via switching control parts 82a to 82c on the basis of monitored results by the temperature detector 92. Thereby, the temperature of the semiconductor chips themselves can be controlled with good accuracy and uniformly.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a burn-in method and apparatus, and more particularly to a burn-in (high temperature continuous operation) test in which a semiconductor device as a device under test is subjected to a temperature load and an electric load.

[0002]

2. Description of the Related Art A burn-in test is essential for predicting the life of semiconductor devices and detecting early failures in the screening process. Generally, the burn-in test is performed as follows. FIG. 6 is a perspective view of the burn-in board 1. A plurality of sockets 3 in which semiconductor devices (not shown) to be tested are set are provided on a board 2 made of heat-resistant resin or the like, and one end of the board 2 has an external terminal for making electrical contact with the outside. 4 are provided.
At the other end of the board 2, a handle 5 is provided for an operator to operate the burn-in board 1. The terminals (not shown) of the socket 3 and the external terminals 4 are connected by the wiring (only part of which is shown) on the board 2.

Such a burn-in board 1 is set in a burn-in test container 6 as shown in FIG. That is, the burn-in test container 6 includes a housing 61, which is a main body, and a lid 6
2 has a structure in which they are connected by a hinge mechanism 63, and an insertion slit 65 of a board connector 64 provided inside
Burn-in board 1 is inserted in. As a result, the external terminal 4 of the burn-in board 1 and the terminal (not shown) of the board connector 64 are connected. Through this connection, the semiconductor device is energized by an unillustrated energizing device. Although not shown, the burn-in test container 6 is provided with a temperature adjusting device, and usually has a structure in which hot air is supplied into the burn-in test container 6 or a heater is provided.

It should be noted that the internal temperature of the burn-in test container 6, that is, the environmental temperature T of the semiconductor device which is the device under test.
_“A” is measured by a temperature sensor provided near the inner wall of the housing 61. The burn-in test is conventionally performed by monitoring the measured temperature and controlling the temperature adjusting device.

[0005]

However, in the above-mentioned prior art, the burn-in test could not be suitably performed for the following reasons. That is, it is the environmental temperature T of the device under test that can be monitored in real time by the conventional technique.
_a , which is the surface temperature of the semiconductor chip, especially p
It does not match the junction temperature T _{j at the} n-junction portion or the Schottky junction portion. Since the failure of the semiconductor device depends on the junction temperature T _j , conventionally, the junction temperature T _j is estimated from the result of measuring the environmental temperature Ta and the burn-in test is performed. However, this examine the relationship between the environmental temperature T _a and the junction temperature T _j requires a very complicated task, the size of semiconductor devices, formats, such as specifications require a separate estimated work each time different. Therefore, it is difficult to perform a simple and accurate burn-in test. Also,
Since the environmental temperature T _a differs depending on the position in the test container 6 and the heat generation amount of each semiconductor device is not the same, it is not easy to screen a large number of devices under the same conditions.

Therefore, an object of the present invention is to provide a burn-in method and apparatus capable of accurately controlling the temperature of the chip itself in a plurality of devices under test to which a burn-in test is simultaneously performed.

[0007]

SUMMARY OF THE INVENTION According to the present invention, a plurality of semiconductor devices, each having a semiconductor chip as a device under test, are placed in an environment of a predetermined temperature in a test container having a plurality of air vents. In the burn-in method of conducting a test by energizing chips, a temperature sensor is formed in advance on each of a plurality of semiconductor chips,
The temperature of multiple semiconductor chips is measured by detecting the electrical characteristics of multiple temperature sensors during the test, and based on the temperature measurement results, the temperature of multiple semiconductor devices is made approximately the same at multiple air outlets. The feature is that the wind is turned on and off independently.

Further, according to the present invention, a plurality of semiconductor devices as a device under test having a semiconductor chip inside are housed, and a test container having a plurality of blow ports, and a temperature adjusting air blown into the test container. In the burn-in device provided with the adjusting means and the energizing means for supplying electric power to the plurality of semiconductor chips, by detecting the electrical characteristics of the temperature sensors formed in advance in each of the plurality of semiconductor chips during the test, Based on the output of the measuring means and the measuring means for measuring the temperature of each semiconductor chip, the temperature control means is controlled so that the temperatures of the plurality of semiconductor chips are approximately the same, and the air blown from the plurality of air blow ports is independently performed. It is characterized by comprising a control means for turning on and off.

[0009]

According to the burn-in method of the present invention, the temperature sensor is provided for each device on the semiconductor chip itself inside the semiconductor device, the temperature sensor is monitored, and the blower is turned on and off for each blower opening according to the result. Therefore, it is possible to accurately control the temperature of each chip itself with high accuracy by adjusting the air flow rate in each of the plurality of semiconductor chips.

Further, in the burn-in apparatus of the present invention, the temperature sensor provided on the semiconductor chip is monitored by the measuring means, and the temperature adjusting means is controlled based on the result to control the on / off of the air blowing at the plurality of air outlets. To be done. Therefore, by setting an air blowing on / off control program for controlling the temperature uniformly in the control means, it is possible to automatically and accurately control the temperature substantially uniformly.

[0011]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 is a conceptual diagram of an air blowing system of a burn-in system according to an embodiment, and FIG. 2 is a conceptual diagram of a temperature detecting and energizing system. A plurality of burn-in boards 1 are provided inside the burn-in test container 6, and semiconductor chips 7 ₁
Semiconductor device having a to 7 ₃ therein (not shown) is set by the socket 3 ₁ to 3 _3, for detecting temperature of the temperature sensor and the integrated circuit 71 ₁ to 71 ₃ in the semiconductor chip ₇₁ to 7 ₃ Diodes 72 _{1 to} 72 ₃ are formed. The burn-in test container 6 is provided with a blower 81 as a temperature adjusting device and blower opening / closing control units 82a to 82c so that the air supply is turned on and off. An electric load is applied to the integrated circuit 71 of the semiconductor chip 7 independently of the energization device 91, and the electric characteristics (especially the change of the rising voltage V _F ) of the temperature detecting diode 72 are individually detected by the temperature detector 92. The junction temperature T _j is measured for each device.

Based on the monitoring result of the temperature detector 92, the control device 93 determines the amount of electricity supplied by the electricity supply device 91 and the air outlet 83.
Open / close control unit 82a for turning on / off the air blown from a to 83c
It is controlled via ~ 82c. The on / off control of the air blow is performed by opening and closing the shutters 84a to 84c provided on the air blow ports 83a to 83c. Further, the control device 93 stores the allowable range of the junction temperature T _j in the burn-in test, and controls the opening / closing of the shutters 84a to 84c in the energization device 91 and the temperature adjusting device in comparison with the monitor result.
Pre-programmed.

FIG. 3 shows the semiconductor chip 7 in the above embodiment.
And the IV characteristic of the temperature detecting diode 72 (see FIG. 11B).
As shown, an integrated circuit 71 and a temperature detection diode 72 are formed on the semiconductor chip 7, and the integrated circuit 71
A current-carrying pad 73 connected to and a monitoring pad 74 connected to the anode and cathode of the temperature detecting diode 72 are provided. Such a semiconductor chip 7 is packaged as a flat package or a leadless chip carrier (LCC) to form a semiconductor device as a device under test. Such temperature monitoring in the semiconductor chip 7 is performed by observing the IV characteristic of the temperature detecting diode 72. That is, since the rising voltage V _F of the IV characteristic shown in FIG. 2A changes linearly with temperature, the change in the rising voltage V _F causes the junction temperature T _F to change.
_j can be accurately determined.

4 and 5 show a semiconductor device 7 which is a device under test in the burn-in apparatus of the above embodiment.
0 is mounted on the socket 3, FIG. 3 is a perspective view, and FIG. 4 is a sectional view. The socket 3 has a base 31 and a lid 32, which are openably and closably coupled by a hinge 33 and closed by engagement of a lever 34 and a hook 35. When the through hole 36 is formed in the central portion of the base 31, a cross-shaped recess 37 is formed from the upper surface, and the terminal 38 is provided therein. Then, one end of the terminal 38 has the base 31
Of the burn-in board 1 and is connected to the wiring on the burn-in board 1. Further, in the central portion of the lid 32, the heat dissipation member 39
Is screwed on. On the other hand, a terminal 76 is provided on the bottom surface of the semiconductor device 70, and when mounted on the socket 3, the terminal 76 contacts the terminal 38 of the socket 3. When the semiconductor device 70 is mounted in the recess 37 and the lid 32 is closed, the bottom surface of the heat dissipation member 39 contacts the top surface of the semiconductor device 70, and heat dissipation is achieved. When the wind hitting the heat dissipation member 39 is controlled, the amount of heat dissipation is controlled and the temperature is adjusted.

According to the above embodiment, the temperature of the semiconductor chip 7 itself can be monitored with extremely high accuracy for any of the plurality of chips. That is, the temperature of the semiconductor chip 7 itself is not only dependent on the different environmental temperature T _a by the position of the internal test apparatus is also dependent on the heat dissipation of the heating and the external in the integrated circuit 71, the heating value and heat radiation amount Has a large variation due to the mounting condition. However,
In this embodiment, since the junction temperatures T _j of the temperature detecting diodes 72 provided on the semiconductor chips 7 are individually monitored, the temperatures of all the semiconductor chips 7 can be directly measured.

Therefore, by using this monitor result, the on / off of the air blow at the plurality of air blow ports 83a to 83c is independently controlled, and the surface temperature (junction temperature T _j ) of the entire semiconductor chip 7 is accurately controlled. Good and uniform control. That is, the air is turned off in a portion having many low temperature devices, and as a result, the amount of air blow is reduced, whereby the temperature of the device is increased and the temperature of the entire device is made uniform. Specifically, the shutter 84 may be closed when there is a low-temperature device, and the normal operation may be restored when the temperature rises to an appropriate value. As a result, it is possible to realize the accuracy of screening and the improvement of the yield at the same time.

For example, in screening a large number of semiconductor devices generating heat of 50 W, when the temperature resistance θ _ja = 2 ° C./W, the junction temperature Tj = 150 ° C., the environmental temperature T _a = 50 ° C. may be set. . And
When the temperature of a certain device reaches 140 ° C., the shutter here is closed to turn off the air flow, and when the temperature of the device returns to 150 ° C., the shutter is opened to perform the constant air flow.

The temperature sensor according to the present invention is not limited to the temperature detecting diode formed on the semiconductor chip separately from the integrated circuit 71, but a diode inside the integrated circuit may be used, or as a transistor. Good. Also, a NiCr-based metal thin film resistor may be formed on the semiconductor chip. Further, various modes can be adopted for the number of blow ports and a specific blow on / off control mechanism.

[0020]

As described above, according to the burn-in method of the present invention, the temperature sensor is provided on the semiconductor chip itself inside the semiconductor device, and the temperature sensor is monitored to control the opening and closing of the air blow for each of a plurality of air blow ports. Therefore, as a result, the air flow rate can be varied for each chip, and the temperature of the semiconductor chip itself can be accurately and uniformly controlled. Therefore, it is possible to perform a burn-in test with high yield and with high accuracy.

Further, in the burn-in device of the present invention, the temperature sensor provided in each of the plurality of semiconductor chips is monitored by the measuring means, and the temperature adjusting means is controlled based on the result, and the air is blown from the plurality of air outlets. ON and OFF are adjusted individually. Therefore, by setting a control program for turning the air on and off in the control means, it is possible to automatically and accurately control the temperature uniformly.

[0022]

[Brief description of drawings]

FIG. 1 is a conceptual diagram of an air blowing system of a burn-in device according to an embodiment.

FIG. 2 is a conceptual diagram of a temperature measurement and energization system of a burn-in device according to an example.

FIG. 3 is a diagram showing a configuration of a semiconductor chip 7 and characteristics of a temperature detecting diode 72 in the example.

FIG. 4 is a perspective view of the socket 3 in the embodiment.

FIG. 5 is a cross-sectional view of the socket 3 in the embodiment.

FIG. 6 is a perspective view showing a configuration of a burn-in board 1.

FIG. 7 is a perspective view of a burn-in test container 6.

[Explanation of symbols]

1 ... Burn-in board 2 ... Board 3 ... Socket 31 ... Base 32 ... Lid 34 ... lever 35 ... Hook 38 ... Terminal 39 ... Heat dissipation member 6 ... Burn-in test container 7 ... Semiconductor chip 70 ... Semiconductor device 71 ... Integrated circuit 72 ... Diode for temperature detection 81 ... Blower 82 ... Opening / closing control unit 83 ... Blower 84 ... Shutter 91 ... energizing device 92 ... Temperature detector 93 ... Control device

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 21/66 T 7013-4M

Claims (2)

[Claims] 1. A test is carried out by placing a plurality of semiconductor devices as devices under test having semiconductor chips therein in an environment of a predetermined temperature in a test container having a plurality of air blowing ports and energizing the plurality of semiconductor chips. In the burn-in method, the temperature sensor is formed in advance on each of the plurality of semiconductor chips, and the temperature of each of the plurality of semiconductor chips is measured by detecting the electrical characteristics of the plurality of temperature sensors during the test. A burn-in method is characterized in that, based on the measurement result of the temperature, the blowing of air at the plurality of air outlets is independently turned on and off so that the temperatures of the plurality of semiconductor devices are substantially the same. 2. A test container containing a plurality of semiconductor devices as a device under test having a semiconductor chip therein and having a plurality of air blowing ports, and a temperature control means for adjusting air blowing into the test container. In a burn-in device including an energization unit that supplies electric power to the plurality of semiconductor chips, the plurality of semiconductor chips are detected by detecting an electrical characteristic of a temperature sensor formed in advance in each of the plurality of semiconductor chips during a test. Based on the outputs of the measuring means and the measuring means, the temperature adjusting means is controlled so that the temperatures of the plurality of semiconductor chips are substantially the same, and the air blown from the plurality of air blow ports is independently controlled. A burn-in device, characterized in that the burn-in device is provided with control means for on / off control.