JPH0535558Y2 - - Google Patents

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Publication number
JPH0535558Y2
JPH0535558Y2 JP1984086855U JP8685584U JPH0535558Y2 JP H0535558 Y2 JPH0535558 Y2 JP H0535558Y2 JP 1984086855 U JP1984086855 U JP 1984086855U JP 8685584 U JP8685584 U JP 8685584U JP H0535558 Y2 JPH0535558 Y2 JP H0535558Y2
Authority
JP
Japan
Prior art keywords
electron
detector
secondary electron
electron beam
optical axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1984086855U
Other languages
Japanese (ja)
Other versions
JPS613662U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8685584U priority Critical patent/JPS613662U/en
Publication of JPS613662U publication Critical patent/JPS613662U/en
Application granted granted Critical
Publication of JPH0535558Y2 publication Critical patent/JPH0535558Y2/ja
Granted legal-status Critical Current

Links

Description

【考案の詳細な説明】 [産業上の利用分野] 本考案は、2次電子による走査電子顕微鏡像を
得る装置の改良に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an improvement of an apparatus for obtaining a scanning electron microscope image using secondary electrons.

[従来技術] 近時、透過結像型電子顕微鏡の電子線照射系を
利用して、走査電子顕微鏡像が観察できる様に2
次電子検出器を備えた装置が使用されている。
[Prior art] Recently, it has become possible to observe scanning electron microscope images using the electron beam irradiation system of a transmission imaging electron microscope.
A device with a secondary electron detector is used.

ところで、この様な装置においては、試料より
発生する2次電子を効率良く捕捉するために、該
2次電子検出器を光軸Zに接近させて配置してい
る。これは、試料から発生した2次電子が光軸Z
に沿つて螺旋軌道を描いて上昇した場合に、該2
次電子検出器に設けられた2次電子捕捉電極によ
つて形成される電場の作用を2次電子に及ぼして
シンチレータの方向へ向けて加速するためであ
る。
By the way, in such an apparatus, the secondary electron detector is arranged close to the optical axis Z in order to efficiently capture the secondary electrons generated from the sample. This is because the secondary electrons generated from the sample are aligned with the optical axis Z.
When the 2nd line rises in a spiral trajectory along the
This is to accelerate the secondary electrons toward the scintillator by applying the action of the electric field formed by the secondary electron capturing electrode provided in the secondary electron detector to the secondary electrons.

しかし乍ら、2次電子捕捉電極によつて形成さ
れる電場は、試料を照射するための電子線に不正
偏向や収差を与える。従つて、この不正偏向や収
差の影響を相殺するため、軸合わせや非点収差補
正を行なつているが、この様な補正を行つたとし
ても、加速電圧を切り換えて使用すると、2次電
子捕捉電極が形成する電場によつて光軸上の電子
線に与える影響も変化してしまう。そのため、従
来の装置においては、加速電圧を切り換える度に
軸合せ、非点補正等の調整を行わなければならな
いため操作が繁雑になる欠点があつた。
However, the electric field formed by the secondary electron trapping electrode gives irregular deflection and aberration to the electron beam for irradiating the sample. Therefore, in order to offset the effects of this incorrect deflection and aberration, axis alignment and astigmatism correction are performed, but even if such corrections are made, if the accelerating voltage is switched and used, the secondary electron The influence on the electron beam on the optical axis also changes depending on the electric field formed by the trapping electrode. Therefore, in the conventional device, adjustments such as axis alignment and astigmatism correction must be made every time the accelerating voltage is changed, resulting in a disadvantage that the operation becomes complicated.

[考案の目的] 本考案は、加速電圧を切り換えた場合、2次電
子検出器に設けられた2次電子捕捉電極が形成す
る電場によつて電子線が受ける影響を略一定とし
て、軸合せ、非点補正等の調整操作を簡単にする
ことを目的としている。
[Purpose of the invention] The present invention aims to align the axis of the electron beam while keeping the influence of the electric field formed by the secondary electron capture electrode provided in the secondary electron detector substantially constant when the accelerating voltage is changed. The purpose is to simplify adjustment operations such as astigmatism correction.

[考案の構成] 本考案の構成は、電子銃から光軸Zに沿つて取
り出された電子線を加速して試料に照射する手
段、該電子線の加速電圧を切り換えるための切り
換え手段、該試料よりの2次電子をその2次電子
捕捉電場により導いて検出する2次電子検出器を
具備した装置において、前記2次電子検出器と光
軸Zとの距離を変化させるための検出器位置移動
手段と、前記切り換え手段による加速電圧の切り
換えに連動して前記光軸Zにおける電子線に対す
る前記2次電子捕捉電場の影響が略一定となるよ
うに該検出位置移動手段を駆動する手段を備えた
ことを特徴としている。
[Structure of the invention] The structure of the invention includes a means for accelerating an electron beam taken out from an electron gun along the optical axis Z and irradiating the sample, a switching means for switching the accelerating voltage of the electron beam, and a means for accelerating the electron beam taken out from the electron gun along the optical axis Z to irradiate the sample. In an apparatus equipped with a secondary electron detector that guides and detects secondary electrons by its secondary electron trapping electric field, the detector position is moved to change the distance between the secondary electron detector and the optical axis Z. and means for driving the detection position moving means so that the influence of the secondary electron trapping electric field on the electron beam on the optical axis Z becomes substantially constant in conjunction with the switching of the acceleration voltage by the switching means. It is characterized by

[実施例] 以下本考案の実施例を添付図面に基づき詳述す
る。
[Examples] Examples of the present invention will be described below in detail based on the accompanying drawings.

第1図は本考案の一実施例を示す概略図であ
り、第2図はその要部の拡大図である。図におい
て、1は光軸Zに沿つて電子線2を放射するため
の電子銃で、3は対物レンズ上磁極片4、対物レ
ンズ下磁極片5の間隙の略中央に挿入された試料
である。該試料3の試料面上で、電子線2が図示
しない偏向コイルにより2次元的に走査され、試
料面より2次電子5が発生する。6は試料3より
発生する2次電子eを検出するための2次電子検
出器である。9は鏡筒7にシール部材8によつて
真空シールされて取り付けられた検出器ホルダー
であり、該2次電子検出器6は該検出器ホルダー
9に真空を保持して移動可能に取り付けられてい
る。10は2次電子検出器6を光軸Zと直交する
方向に移動するためのステツピングモータであ
る。11は2次電子検出器6を移動させるための
移動棒であり、該移動棒11にはラツク12が形
成されている。13はステツピングモータ10の
シヤフトに固定されたピニオンであり、ラツク1
2とピニオン13とは噛み合わされている。その
ため、ステツピングモータ10が回転すると、2
次電子検出器6は光軸Z方向また反対方向に移動
する様になつている。2次電子5を検出するため
の2次電子検出器6は、シンチレータ14をその
先端に取り付けたライトパイプ15とその後端に
配置された光軸増倍管(図示せず)等から構成さ
れる。前記ライトパイプ先端のシンチレータ14
の前面には、導電性薄膜が蒸着されており、この
導電性薄膜には、2次電子eを捕捉するためのリ
ング状の2次電子捕捉電極16と共に図示外の直
流電源より正の高電圧が印加されている。又、ラ
イトパイプ15の周囲には接地電位のシールド筒
17が設けられている。18はステツピングモー
タ10を駆動するための駆動電源であり、該駆動
電源18は制御回路20よりの信号に基づいて制
御される。この制御回路20には、加速電源19
よりの加速電圧を表わす信号が供給されている。
FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is an enlarged view of the main parts thereof. In the figure, 1 is an electron gun for emitting an electron beam 2 along the optical axis Z, and 3 is a sample inserted approximately in the center of the gap between the objective lens upper magnetic pole piece 4 and the objective lens lower magnetic pole piece 5. . The electron beam 2 is two-dimensionally scanned on the sample surface of the sample 3 by a deflection coil (not shown), and secondary electrons 5 are generated from the sample surface. 6 is a secondary electron detector for detecting secondary electrons e generated from the sample 3. A detector holder 9 is vacuum-sealed and attached to the lens barrel 7 by a sealing member 8, and the secondary electron detector 6 is movably attached to the detector holder 9 while maintaining a vacuum. There is. 10 is a stepping motor for moving the secondary electron detector 6 in a direction perpendicular to the optical axis Z. Reference numeral 11 denotes a moving rod for moving the secondary electron detector 6, and a rack 12 is formed on the moving rod 11. 13 is a pinion fixed to the shaft of the stepping motor 10;
2 and pinion 13 are meshed with each other. Therefore, when the stepping motor 10 rotates, 2
The secondary electron detector 6 is configured to move in the optical axis Z direction or in the opposite direction. A secondary electron detector 6 for detecting the secondary electrons 5 is composed of a light pipe 15 having a scintillator 14 attached to its tip, an optical axis multiplier tube (not shown), etc. disposed at its rear end. . scintillator 14 at the tip of the light pipe
A conductive thin film is deposited on the front surface of the conductive thin film, and the conductive thin film is coated with a high positive voltage from a DC power source (not shown) together with a ring-shaped secondary electron capturing electrode 16 for capturing secondary electrons e. is applied. Further, a shield tube 17 having a ground potential is provided around the light pipe 15. Reference numeral 18 denotes a drive power source for driving the stepping motor 10, and the drive power source 18 is controlled based on a signal from a control circuit 20. This control circuit 20 includes an acceleration power source 19
A signal representative of the accelerating voltage is provided.

以上の様に構成された装置において、例えば加
速電圧が100KV、50KV、10KVに切り換えた場
合に、各加速電圧において、該2次電子捕捉電極
16により電子線2が受ける影響が一定となる様
に、制御回路20の制御に基づく2次電子検出器
6の移動量を設定しておく。そこで、電子線2を
加速電源19より、例えば100KVで加速した場
合、制御回路20は該加速電源19よりの加速電
圧を表わす信号に基づいて駆動電源18を制御
し、ステツピングモータ10により、2次電子検
出器6を第2図の点線で示したイの位置まで移動
させ、同様に加速電圧50KVではロの位置、又加
速電圧10KVではハの位置まで移動させ、該2次
電子捕捉電極16による電場が電子線2に与える
影響が略一定となるように制御する。従つて、加
速電圧を切り換えた場合でも、電子線2の偏向
量、非点変化量が略一定となり、軸合せ及び非点
補正等の調整操作を簡単に行なうことができる。
In the device configured as above, for example, when the accelerating voltage is switched to 100 KV, 50 KV, and 10 KV, the effect on the electron beam 2 by the secondary electron capturing electrode 16 is constant at each accelerating voltage. , the amount of movement of the secondary electron detector 6 based on the control of the control circuit 20 is set in advance. Therefore, when the electron beam 2 is accelerated by the acceleration power source 19 at, for example, 100 KV, the control circuit 20 controls the drive power source 18 based on the signal representing the acceleration voltage from the acceleration power source 19, and the stepping motor 10 Move the secondary electron detector 6 to the position A shown by the dotted line in FIG. The influence of the electric field on the electron beam 2 is controlled to be approximately constant. Therefore, even when the accelerating voltage is switched, the amount of deflection and the amount of astigmatism change of the electron beam 2 remain substantially constant, and adjustment operations such as axis alignment and astigmatism correction can be easily performed.

尚、以上は例示であり、変形が可能である。本
実施例では加速電圧の切り換えに連動して検出器
を移動させるため、加速電源よりの加速電圧を表
わす信号を制御回路に供給したが、一般に2次電
子検出器6よりの平均信号強度は加速電圧が高い
程少なくなるため、この信号強度を制御回路20
に供給して、平均信号強度の変化に応じて検出器
を移動させるようにしても良い。
Note that the above is an example, and modifications are possible. In this embodiment, in order to move the detector in conjunction with switching of the accelerating voltage, a signal representing the accelerating voltage from the accelerating power source was supplied to the control circuit, but generally the average signal intensity from the secondary electron detector 6 is The higher the voltage, the lower the signal strength, so the control circuit 20
The detector may be moved in response to changes in the average signal strength.

[考案の効果] 以上の様に本考案は、電子線を試料に照射し、
該試料よりの2次電子による走査電子顕微鏡像を
得る装置において、加速電圧の切り換えに応じ
て、光軸Zにおける電子線に対する前記2次電子
捕捉電場の影響が略一定となるように、2次電子
検出器の位置を自動的に移動することにより、前
記電子線の偏向量、非点変化量を略一定として、
加速電圧の切り換えに伴なう軸合せ、非点補正等
の調整操作を容易にした装置が提供される。
[Effect of the device] As described above, the device irradiates the sample with an electron beam,
In the apparatus for obtaining a scanning electron microscope image using secondary electrons from the sample, the secondary electron trapping electric field is set so that the influence of the secondary electron trapping electric field on the electron beam on the optical axis Z becomes approximately constant according to switching of the accelerating voltage. By automatically moving the position of the electron detector, the amount of deflection and astigmatism of the electron beam are kept approximately constant,
A device is provided that facilitates adjustment operations such as axis alignment and astigmatism correction accompanying switching of acceleration voltage.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の構成図、第2図は
第1図の実施例装置の要部の拡大図である。 1……電子銃、2……電子線、3……試料、
4,5……対物レンズ磁極片、6……2次電子検
出器、7……鏡筒、8……シール部材、9……検
出器ホルダー、10……ステツピングモータ、1
1……移動棒、12……ラツク、13……ピニオ
ン、14……シンチレーター、15……ライトパ
イプ、16……2次電子捕捉電極、17……シー
ルド筒、18……駆動電源、19……加速電源、
20……制御回路。
FIG. 1 is a block diagram of an embodiment of the present invention, and FIG. 2 is an enlarged view of the essential parts of the embodiment of the apparatus shown in FIG. 1...electron gun, 2...electron beam, 3...sample,
4, 5... Objective lens magnetic pole piece, 6... Secondary electron detector, 7... Lens barrel, 8... Seal member, 9... Detector holder, 10... Stepping motor, 1
DESCRIPTION OF SYMBOLS 1...Moving rod, 12...Rack, 13...Pinion, 14...Scintillator, 15...Light pipe, 16...Secondary electron capturing electrode, 17...Shield tube, 18...Drive power source, 19... ...acceleration power supply,
20...Control circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子銃から光軸Zに沿つて取り出された電子線
を加速して試料に照射する手段、該電子線の加速
電圧を切り換えるための切り換え手段、該試料よ
りの2次電子をその2次電子捕捉電場により導い
て検出する2次電子検出器を具備した装置におい
て、前記2次電子検出器と光軸Zとの距離を変化
させるための検出器位置移動手段と、前記切り換
え手段による加速電圧の切り換えに連動して前記
光軸Zにおける電子線に対する前記2次電子捕捉
電場の影響が略一定となるように該検出器位置移
動手段を駆動する手段を備えたことを特徴とする
2次電子検出装置。
A means for accelerating an electron beam taken out from an electron gun along an optical axis Z and irradiating the sample, a switching means for switching the accelerating voltage of the electron beam, and a means for capturing secondary electrons from the sample. In an apparatus equipped with a secondary electron detector that is guided and detected by an electric field, a detector position moving means for changing the distance between the secondary electron detector and the optical axis Z, and switching of the accelerating voltage by the switching means. A secondary electron detection device characterized by comprising means for driving the detector position moving means so that the influence of the secondary electron trapping electric field on the electron beam on the optical axis Z becomes substantially constant. .
JP8685584U 1984-06-12 1984-06-12 Secondary electron detection device Granted JPS613662U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8685584U JPS613662U (en) 1984-06-12 1984-06-12 Secondary electron detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8685584U JPS613662U (en) 1984-06-12 1984-06-12 Secondary electron detection device

Publications (2)

Publication Number Publication Date
JPS613662U JPS613662U (en) 1986-01-10
JPH0535558Y2 true JPH0535558Y2 (en) 1993-09-09

Family

ID=30638535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8685584U Granted JPS613662U (en) 1984-06-12 1984-06-12 Secondary electron detection device

Country Status (1)

Country Link
JP (1) JPS613662U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0331956U (en) * 1989-08-07 1991-03-28

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5514683A (en) * 1978-07-19 1980-02-01 Jeol Ltd Reflected electron detector for scan electronic microscope
JPS5568059A (en) * 1978-11-17 1980-05-22 Jeol Ltd Automatic position setter for reflective electron beam detector in scanning electronic microscope

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5514683A (en) * 1978-07-19 1980-02-01 Jeol Ltd Reflected electron detector for scan electronic microscope
JPS5568059A (en) * 1978-11-17 1980-05-22 Jeol Ltd Automatic position setter for reflective electron beam detector in scanning electronic microscope

Also Published As

Publication number Publication date
JPS613662U (en) 1986-01-10

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