JPH0535424B2 - - Google Patents
Info
- Publication number
- JPH0535424B2 JPH0535424B2 JP60098946A JP9894685A JPH0535424B2 JP H0535424 B2 JPH0535424 B2 JP H0535424B2 JP 60098946 A JP60098946 A JP 60098946A JP 9894685 A JP9894685 A JP 9894685A JP H0535424 B2 JPH0535424 B2 JP H0535424B2
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- tellurium
- photoreceptor
- layer made
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 35
- 108091008695 photoreceptors Proteins 0.000 claims description 24
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 14
- 239000011669 selenium Substances 0.000 claims description 13
- 229910001215 Te alloy Inorganic materials 0.000 claims description 12
- 229910052711 selenium Inorganic materials 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 11
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 6
- 229910000528 Na alloy Inorganic materials 0.000 claims description 4
- 229910001370 Se alloy Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- HVAKSLUOHARFLM-UHFFFAOYSA-N selenium;sodium Chemical compound [Se][Na] HVAKSLUOHARFLM-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000967 As alloy Inorganic materials 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Description
〔発明の属する技術分野〕
本発明は、電子写真方式の普通紙複写機および
光プリンタに用いられる電子写真用感光体に関す
る。
〔従来技術とその問題点〕
近年、オフイス・オートメーシヨンが急速に発
展し普及してきているが、それに伴い、それらの
出力機として各種プリンタの開発が活発にすすめ
られている。なかでも、その高速印字性、高画
質、高信頼性、低騒音などの点で、電子写真方式
の光プリンタが注目されている。レーザプリンタ
は数千行／分以上の高速プリンタの分野では主流
となつている。
最近、中速から低速（印刷速度で千行／分前
後）の小型光プリンタが相ついで開発されてい
る。これら小型光プリンタは主としてオフイス・
コンピユータに接続して使用される。また、日本
語ワードプロセツサ、光デイスク・フアイル・シ
ステムの出力機として使われ、高速フアクシミリ
に使用しようという動きもある。さらに、最近は
インテリジエンスな各種機能を持たせうるデジタ
ル普通紙複写機に対する要望が強いが、その出力
部としても使用される。
光プリンタの光源としては、レーザ光、発光ダ
イオードなどが用いられるが、その印刷速度の高
速性と高画質の点でレーザ光が多用される。レー
ザ光としてはHe−Neレーザ光が主として用いら
れてきたが、機器の小型化が要望され最近では半
導体レーザ光が使用されるようになつてきた。
光プリンタは、走査レーザ光または発光ダイオ
ード・アレイなどを印刷すべき画像に対応して
on、off制御する部分と、その制御光を受けて帯
電された感光体上に印刷画像に対応した静電潜像
を形成し、その潜像をトナー像として印刷する電
子写真部分とからなる。電子写真部分は従来の電
子写真方式の複写機と同じ構成であるが、こゝに
使用される感光体の性能がプリンタの印刷速度、
印刷画像の画質、安定性を左右する重要な因子と
なる。
光プリンタには、前述のように半導体レーザ光
や発光ダイオード・アレイが用いられるが、半導
体レーザ光の波長は790nm前後であり、発光ダイ
オードの波長は660〜680nm程度である。この様
な長波長光に対しては、従来の主として電子写真
式の複写機に適用されていた感光体は使用できな
い。従来の感光体は可視光の波長領域で高い光感
度を有するように光導電性材料を選び、感光層の
構成も工夫されており、そのままでは660nm以上
の長波長光に対しては光感度が非常に低いためで
ある。
このような長波長光に対して好適な感光体に用
いられうる光導電性材料および感光層の構成につ
いて種々検討が進められているが、電子写真特性
（帯電電位、光感度、残留電位など）、疲労特性、
耐環境性、耐刷性などの点でまだ問題が多い。
セレン感光体についても検討が進められてお
り、キヤリア輸送層としてセレン、キヤリア発生
層としてセレン・テルル合金、表面保護層として
ゲルマニウム、テルル、ひ素などとセレンとの合
金を用いた多層構造の機能分離型感光体が提案さ
れている。しかしながら、このような構成の感光
体は波長660nm以上の長波長光に対する電子写真
特性は優れているが疲労特性に問題があり、繰り
返し連続使用したときに帯電電位が低下してくる
欠点があつた。
〔発明の目的〕
本発明の目的は、前述の欠点を除去して、
660nm〜800nm程度の長波長光領域において優れ
た電子写真特性を有し、かつ繰り返し連続使用時
にも帯電電位の低下のあらわれない電子写真用セ
レン感光体を提供することにある。
〔発明の要点）
本発明の目的は、導電性基体の上に、セレンま
たは10重量％以下のテルルを含有するセレン・テ
ルル合金からなるキヤリア輸送層、20〜50重量％
のテルルを含有するセレン・テルル合金からなる
キヤリア発生層、ゲルマニウム、テルルまたはひ
素とセレンとの合金からなる表面保護層とを順次
積層してなる感光体において、前記キヤリア発生
層と前記表面保護層との間に、ナトリウムを200
〜500重量ppm含有するセレン・ナトリウム合金
からなる中間層を形成し介在せしめることにより
達成される。
〔発明の実施例〕
以下、本発明を実施例により図を参照しながら
説明する。
第１図は本発明の感光体の概念的断面図であ
り、１は導電性基体、２はセレンまたはセレン・
テルル合金からなるキヤリア輸送層、３はセレ
ン・テルル合金からなるキヤリア発生層、４はセ
レン・ナトリウム合金からなる中間層、５はゲル
マニウム、テルルまたはひ素とセレンとの合金か
らなる表面保護層を示す。
導電性基体１しての外径120mmのアルミニウム
円筒の温度を約60℃に保持し、その外表面にセレ
ンを膜厚50μmに真空蒸着でつけてキヤリア輸送
層２とした。その上にテルルを44重量％含有する
セレン・テルル合金を膜厚0.3μmに真空中でフラ
ツシユ蒸着しキヤリア発生層３とした。さらにこ
の上に、第１表に示す材料組成および膜厚の組み
合せで中間層４、表面保護層５を順次真空中のフ
ラツシユ蒸着で形成し、10種類の感光体を作製し
た。また比較例として、中間層４を設けず、表面
保護層５を直接形成した感光体を作製した。
[Technical Field to Which the Invention Pertains] The present invention relates to an electrophotographic photoreceptor used in electrophotographic plain paper copying machines and optical printers. [Prior Art and Its Problems] In recent years, office automation has rapidly developed and become popular, and in conjunction with this, various printers have been actively developed as output devices. Among these, electrophotographic optical printers are attracting attention due to their high speed printing performance, high image quality, high reliability, and low noise. Laser printers have become mainstream in the field of high-speed printers that can print several thousand lines per minute or more. Recently, small optical printers with medium to low speeds (printing speeds of around 1,000 lines/minute) have been developed one after another. These small optical printers are mainly used in offices and
Used by connecting to a computer. It is also used as an output device for Japanese word processors and optical disk file systems, and there is also a movement to use it for high-speed facsimile. Furthermore, recently there has been a strong demand for digital plain paper copying machines that can be equipped with various intelligent functions, and they are also used as output units. Laser light, light emitting diodes, and the like are used as light sources for optical printers, and laser light is often used because of its high printing speed and high image quality. Although He--Ne laser light has been mainly used as the laser light, semiconductor laser light has recently come into use due to the demand for miniaturization of equipment. Optical printers use scanning laser beams or light emitting diode arrays to correspond to the image to be printed.
It consists of a part that controls on/off, and an electrophotographic part that receives the control light and forms an electrostatic latent image corresponding to the printed image on a charged photoreceptor, and prints the latent image as a toner image. The electrophotographic part has the same configuration as a conventional electrophotographic copier, but the performance of the photoreceptor used here depends on the printer's printing speed,
This is an important factor that affects the quality and stability of printed images. As described above, optical printers use semiconductor laser light and light emitting diode arrays, and the wavelength of semiconductor laser light is around 790 nm, and the wavelength of light emitting diodes is around 660 to 680 nm. For such long-wavelength light, photoreceptors that are conventionally applied mainly to electrophotographic copying machines cannot be used. In conventional photoreceptors, photoconductive materials are selected to have high photosensitivity in the visible wavelength region, and the structure of the photosensitive layer is also devised, so that they are not photosensitivity to long-wavelength light of 660 nm or more. This is because it is very low. Various studies are underway on photoconductive materials and photosensitive layer configurations that can be used in photoreceptors suitable for such long wavelength light, but electrophotographic characteristics (charging potential, photosensitivity, residual potential, etc.) , fatigue properties,
There are still many problems in terms of environmental resistance, printing durability, etc. Studies are also underway on selenium photoreceptors, with functional separation in a multilayer structure using selenium as the carrier transport layer, a selenium-tellurium alloy as the carrier generation layer, and an alloy of selenium with germanium, tellurium, arsenic, etc. as the surface protection layer. type photoreceptors have been proposed. However, although a photoreceptor with such a configuration has excellent electrophotographic properties for long-wavelength light of 660 nm or more, it has problems with fatigue properties, and has the disadvantage that the charging potential decreases when used repeatedly and continuously. . [Object of the invention] The object of the invention is to eliminate the above-mentioned drawbacks and to
It is an object of the present invention to provide a selenium photoreceptor for electrophotography which has excellent electrophotographic properties in a long wavelength light region of approximately 660 nm to 800 nm and which does not exhibit a decrease in charging potential even when used repeatedly and continuously. [Summary of the Invention] The object of the present invention is to provide a carrier transport layer of selenium or a selenium-tellurium alloy containing 20 to 50% by weight of tellurium or less on a conductive substrate.
A photoreceptor comprising a carrier generation layer made of a selenium-tellurium alloy containing tellurium, and a surface protection layer made of germanium, tellurium, or an alloy of arsenic and selenium. between 200 and 200% sodium
This is achieved by forming and intervening an intermediate layer of a selenium-sodium alloy containing ~500 ppm by weight. [Embodiments of the Invention] Hereinafter, the present invention will be described by way of embodiments with reference to the drawings. FIG. 1 is a conceptual cross-sectional view of the photoreceptor of the present invention, where 1 is a conductive substrate, 2 is selenium or selenium.
A carrier transport layer made of a tellurium alloy, 3 a carrier generation layer made of a selenium-tellurium alloy, 4 an intermediate layer made of a selenium-sodium alloy, and 5 a surface protection layer made of germanium, tellurium, or an alloy of arsenic and selenium. . The temperature of an aluminum cylinder with an outer diameter of 120 mm as the conductive substrate 1 was maintained at about 60° C., and selenium was applied to the outer surface of the cylinder to a thickness of 50 μm by vacuum deposition to form the carrier transport layer 2. Thereon, a selenium-tellurium alloy containing 44% by weight of tellurium was flash-deposited in a vacuum to a thickness of 0.3 μm to form the carrier generation layer 3. Further, an intermediate layer 4 and a surface protective layer 5 were successively formed thereon by flash vapor deposition in vacuum using the material compositions and film thickness combinations shown in Table 1, thereby producing 10 types of photoreceptors. Further, as a comparative example, a photoreceptor was produced in which the intermediate layer 4 was not provided and the surface protective layer 5 was directly formed.
【表】
これらの感光体試料を850Vに帯電し、波長
780nmの単色光を照射して、帯電電位が1/2に減
衰するまでの半減衰露光量Ｅ1/2、および、さら
に露光量が5μJ／cm2になるまで照射したときの残
留電位Vrを測定した。
次に、感光体の繰り返し連続使用時の疲労特性
をみるために、感光体を円筒軸のまわりに周速
120mm／秒で回転させながら、感光体１回転中に、
帯電−波長780nmの単色光5μJ／cm2露光−青色光
除電を１サイクルとする負荷を１回与えるという
プロセスを、連続して250回繰り返し、初期帯電
電位と250サイクル負荷後の帯電電位との差△Vs
および250サイクル目の単色光露光後の電位Vw
（残留電位Vrに相当する）を測定した。これらの
測定結果を第２表に示す。△Vsの負号は帯電電
位の低下を意味している。[Table] These photoreceptor samples were charged to 850V and the wavelength
Irradiate with 780nm monochromatic light and measure the half-attenuation exposure amount E1/2 until the charged potential attenuates to 1/2, and the residual potential Vr when further irradiation until the exposure amount reaches 5μJ/cm 2 did. Next, in order to examine the fatigue characteristics of the photoconductor during repeated and continuous use, the photoconductor was rotated at a circumferential speed around the cylindrical axis.
While rotating at 120mm/sec, during one rotation of the photoreceptor,
Charging - The process of applying a load of monochromatic light with a wavelength of 780 nm at 5 μJ/cm 2 and blue light static elimination in one cycle was repeated 250 times in succession, and the initial charging potential and the charging potential after 250 cycles of charging were Difference △Vs
and potential Vw after 250th cycle monochromatic light exposure
(corresponding to residual potential Vr) was measured. The results of these measurements are shown in Table 2. The negative sign of ΔVs means a decrease in the charging potential.
【表】【table】
本発明によれば、導電性基体上に、セレンまた
は10重量％以下のテルルを含有するセレン・テル
ル合金からなるキヤリア輸送層、20〜50重量％の
テルルを含有するセレン・テル合金からなるキヤ
リア発生層、セレン・テルル合金またはセレン・
ゲルマニウム合金またはセレン・ひ素合金からな
る表面保護層を順次積層してなる電子写真用感光
体において、キヤリア発生層と表面保護層との間
にセレン・ナトリウム合金からなる中間層を形成
し介在せしめ、感光体露光時、キヤリア発生層内
に励起されたキヤリアのうち電子の表面保護層へ
の注入がスムーズに行われるようにし、感光体の
繰り返し使用時においても、キヤリア発生層と表
面保護層との界面での電子の蓄積をなくして、帯
電電位の変動が生じないようにする。かくして、
本発明の構成の感光体は、660〜800nm程度の長
波長光に対して、良好な電子写真特性を有し、か
つ、繰り返し連続使用しても帯電電位の低下、残
留電位の増大のみられない優れた感光体となる。
本発明による感光体は、最近急速に普及してい
るオフイス・オートメーシヨンの分野において、
出力機として急増している半導体レーザまたは発
光ダイオードを光源とする光プリンタに用いられ
る電子写真用感光体として好適であり、この分野
の発展に非常に貢献するものである。
According to the present invention, a carrier transport layer made of selenium or a selenium-tellurium alloy containing not more than 10% by weight of tellurium is provided on a conductive substrate, a carrier made of a selenium-tellurium alloy containing 20 to 50% by weight of tellurium. Generating layer, selenium-tellurium alloy or selenium-tellurium alloy
In an electrophotographic photoreceptor in which surface protection layers made of germanium alloy or selenium-arsenic alloy are successively laminated, an intermediate layer made of selenium-sodium alloy is formed and interposed between the carrier generation layer and the surface protection layer, During exposure of the photoconductor, electrons from the carriers excited in the carrier generation layer are smoothly injected into the surface protective layer, and even when the photoconductor is used repeatedly, the contact between the carrier generation layer and the surface protection layer is maintained. Eliminate accumulation of electrons at the interface to prevent fluctuations in charging potential. Thus,
The photoreceptor configured according to the present invention has good electrophotographic properties for long wavelength light of approximately 660 to 800 nm, and does not exhibit a decrease in charging potential or an increase in residual potential even after repeated and continuous use. Makes an excellent photoreceptor. The photoreceptor according to the present invention can be used in the field of office automation, which has recently become rapidly popular.
It is suitable as an electrophotographic photoreceptor for use in optical printers that use semiconductor lasers or light emitting diodes as light sources, which are rapidly increasing as output devices, and will greatly contribute to the development of this field.
第１図は本発明の感光体の概念的断面図、第２
図は中間層のナトリウム含有量、中間層の膜厚と
感光体の帯電電位の変動ΔVsとの関係を示す線
図である。
１……導電性基体、２……キヤリア輸送層、３
……キヤリア発生層、４……中間層、５……表面
保護層。
FIG. 1 is a conceptual cross-sectional view of the photoreceptor of the present invention, and FIG.
The figure is a diagram showing the relationship between the sodium content of the intermediate layer, the thickness of the intermediate layer, and the variation ΔVs in the charged potential of the photoreceptor. 1... Conductive substrate, 2... Carrier transport layer, 3
...Carrier generation layer, 4...Intermediate layer, 5...Surface protection layer.
Claims (1)
テルルを含有するセレン・テルル合金からなるキ
ヤリア輸送層、20〜50重量％テルルを含有するセ
レン・テルル合金からなるキヤリア発生層、ナト
リウムを200〜500重量ppm含有するセレン・ナト
リウム合金からなる中間層、セレンにテルル、ゲ
ルマニウム、ひ素のいずれかを添加してなるセレ
ン合金からなる表面保護層がこの順に積層されて
いることを特徴とする電子写真用セレン感光体。1 On a conductive substrate, a carrier transport layer made of selenium or a selenium-tellurium alloy containing 10% by weight or less tellurium, a carrier generation layer made of a selenium-tellurium alloy containing 20 to 50% tellurium by weight, and 200 to 200% sodium. Electrophotography characterized in that an intermediate layer made of a selenium-sodium alloy containing 500 ppm by weight, and a surface protective layer made of a selenium alloy made of selenium added with tellurium, germanium, or arsenic are laminated in this order. Selenium photoreceptor for use.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9894685A JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9894685A JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61256353A JPS61256353A (en) | 1986-11-13 |
| JPH0535424B2 true JPH0535424B2 (en) | 1993-05-26 |
Family
ID=14233264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9894685A Granted JPS61256353A (en) | 1985-05-10 | 1985-05-10 | Electrophotographic selenium photosensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61256353A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63279258A (en) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
| JPH077215B2 (en) * | 1987-10-26 | 1995-01-30 | 富士電機株式会社 | Electrophotographic photoconductor |
| JPH01219753A (en) * | 1988-02-26 | 1989-09-01 | Fuji Electric Co Ltd | Electrophotographic selenic sensitive body |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853686A (en) * | 1971-11-08 | 1973-07-27 | ||
| JPS58174952A (en) * | 1982-04-08 | 1983-10-14 | Fuji Electric Co Ltd | Electrophotographic receptor |
| JPS6043662A (en) * | 1983-08-19 | 1985-03-08 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS60252353A (en) * | 1984-05-29 | 1985-12-13 | Nippon Mining Co Ltd | Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture |
-
1985
- 1985-05-10 JP JP9894685A patent/JPS61256353A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4853686A (en) * | 1971-11-08 | 1973-07-27 | ||
| JPS58174952A (en) * | 1982-04-08 | 1983-10-14 | Fuji Electric Co Ltd | Electrophotographic receptor |
| JPS6043662A (en) * | 1983-08-19 | 1985-03-08 | Fuji Electric Co Ltd | Selenium photosensitive body for electrophotography |
| JPS60252353A (en) * | 1984-05-29 | 1985-12-13 | Nippon Mining Co Ltd | Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61256353A (en) | 1986-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3655377A (en) | Tri-layered selenium doped photoreceptor | |
| US4390610A (en) | Layered electrophotographic imaging element, apparatus and method sensitive to gallium arsenide laser, the element including two charge generation layers and a polycarbonate adhesive layer | |
| JPH0535424B2 (en) | ||
| JPH0569216B2 (en) | ||
| US3540885A (en) | Reduction of fog formation in an electrophotographic light sensitive sheet | |
| US5087543A (en) | Electrophotographic printer | |
| US4837099A (en) | Multilayer photoconductor for electrophotography | |
| US6045958A (en) | Photoconductor for electrophotography | |
| JP3144342B2 (en) | Electrophotographic photoreceptor, method of manufacturing the same, and electrophotographic process using the photoreceptor | |
| JPH079541B2 (en) | Electrophotographic photoconductor | |
| JP2599950B2 (en) | Photoconductor structure | |
| JP3471873B2 (en) | Image forming method | |
| US3536482A (en) | Electrophotographic imaging system including a halogen treatment step for making background areas transparent | |
| JP2002139851A (en) | Positive electrification type electrophotographic organic photoreceptor | |
| JPH02256084A (en) | Electrophotography device | |
| JP2638185B2 (en) | Manufacturing method of photoreceptor for electrophotography | |
| JP2867530B2 (en) | Positive charging / reversal development type electrophotographic photoreceptor for electrophotographic apparatus | |
| JPS6344661A (en) | Electrophotographic sensitive body | |
| JPS6142663A (en) | Iformation recording device | |
| JPH03149563A (en) | Electrophotographic sensitive body | |
| JP2000231207A (en) | Electrophotographic photoreceptor | |
| JPH11352713A (en) | Electrophotographic photoreceptor, its production, and electrophotographic process using that photoreceptor | |
| JPS60163049A (en) | Electrophotographic sensitive body made of selenium | |
| Terasaki et al. | Organic Photoconductors for Printers | |
| JPH0544668B2 (en) |