JPH0569216B2 - - Google Patents

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Publication number
JPH0569216B2
JPH0569216B2 JP60120880A JP12088085A JPH0569216B2 JP H0569216 B2 JPH0569216 B2 JP H0569216B2 JP 60120880 A JP60120880 A JP 60120880A JP 12088085 A JP12088085 A JP 12088085A JP H0569216 B2 JPH0569216 B2 JP H0569216B2
Authority
JP
Japan
Prior art keywords
arsenic
selenium
layer
photoreceptor
ocl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60120880A
Other languages
Japanese (ja)
Other versions
JPS61278858A (en
Inventor
Susumu Honma
Masahiko Kasahara
Kimio Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP12088085A priority Critical patent/JPS61278858A/en
Publication of JPS61278858A publication Critical patent/JPS61278858A/en
Publication of JPH0569216B2 publication Critical patent/JPH0569216B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の属する技術分野〕 本発明は、電子写真方式の普通紙複写機および
光プリンタに用いられるセレン系材料からなる感
光層を有する電子写真用感光体に関する。 〔従来技術とその問題点〕 近年、オフイス・オートメーシヨンが急速に発
展し普及してきているが、それに伴い、それらの
出力機として各種プリンタの開発が活発にすすめ
られている。なかでも、その高速印字性、高画
質、高信頼性、低騒音などの点で、電子写真方式
の光プリンタが注目されている。 最近、中速から低速(印刷速度で千行/分前
後)の小型光プリンタが相ついで開発されてい
る。これら小型光プリンタは、主としてオフイ
ス・コンピユータに接続して使用され、また日本
語ワードプロセツサ、光デイスク・フアイル・シ
ステムの出力機としても使われ、高速フアクシミ
リにもこれを使用しようという動きがある。さら
に、最近はインテリジエンスな各種機能を持たせ
うるデジタル普通紙複写機に対する要望が強い
が、その出力部としてもこれが使用される。 光プリンタの光源としては、レーザ光、発光ダ
イオードなどが用いられるが、その印刷速度の高
速性と高画質の点でレーザ光が多用される。レー
ザ光としてはHe−Neレーザ光が主として用いら
れてきたが、機器の小型化が要望され最近では半
導体レーザ光が使用されるようになつてきた。 光プリンタは、走査レーザ光または発光ダイオ
ード・アレイなどを、印刷すべき画像に対応して
on,off制御する部分と、その制御光を受けて帯
電された感光体上に印刷画像に対応した静電潜像
を形成しその潜像トナー像として印刷する電子写
真部分とから構成されている。電子写真部分は従
来の電子写真方式の複写機と同じ構成であるが、
こゝに使用される感光体の性能がプリンタの印刷
速度、印刷画像の画質、安定性を左右する重要な
因子となる。 光プリンタには、前述のように半導体レーザ光
や発光ダイオード・アレイが用いられるが、半導
体レーザ光の波長は790nm前後であり、発光ダイ
オードの光の波長は660〜680nm程度である。こ
の様な長波長光に対しては、従来の主として電子
写真式の複写機に適用されていた感光体は使用で
きない。従来の感光体は可視光の波長領域で高い
光感度を有するように光導電性材料を選び、感光
層の構成も工夫されており、そのままでは660nm
以上の長波長光に対しては光感度が非常に低いた
めである。 このような長波長光に対して好適な感光体に用
いられうる光導電性材料および感光層の構成につ
いては種々検討が進められているが、電子写真特
性(帯電電位、光感度、残留電位など)、疲労特
性、耐環境性、耐刷性などの点でまだ問題が多
い。 セレン感光体についても検討が進められてお
り、導電性基体上に、非晶質セレンまたは非晶質
セレン・テルル合金からなるキヤリア輸送層、テ
ルルを20〜50重量%含有する非晶質セレン・テル
ル合金からなるキヤリア発生層、非晶質セレンま
たはテルルやひ素とセレンとの非晶質合金からな
る表面保護層を順次積層した多層構造の機能分離
型感光体が提案されている。しかしながら、この
ような構成の感光体は長波長光に対する電子写真
特性は優れているが、その耐久性の面で問題があ
る。すなわち、表面保護層は非晶質セレンまたは
非晶質セレン・テルル合金からなる感光体の場合
には、初期の電子写真特性、連続印字時の耐磨耗
性とも実用上充分な特性を示すが、印字後高温に
放置されると非晶質の表面保護層が結晶化しやす
いという欠点を有する。一方、表面保護層が非晶
質セレン・ひ素合金からなる感光体の場合には、
セレン・ひ素合金のガラス転移点はセレンやセレ
ン・テルル合金よりも高く、従つて非晶質から結
晶質への転移すなわち結晶化は起きにくく、前述
の表面保護層の結晶化しやすいという欠点を除く
ことができる。しかも第2図に示すとおり、ひ素
の添加量が多くなるにつれてセレン・ひ素合金の
ガラス転移点は高くなるので、表面保護層の結晶
化を抑制するためにはひ素の添加量が多いほど良
いことになる。ところが、下地層であるキヤリア
輸送層、キヤリア発生層が非晶質セレンまたは非
晶質セレン・テルル合金からなるため、感光体が
下地層のガラス転移点(約45℃)以上の高温に長
時間さらされると、下地層と表面保護層との熱膨
張係数が異なるために表面保護層にしわが生じる
という欠点が生じてくる。このしわの発生を防ぐ
ためには、表面保護層の膜厚を薄くするか、ひ素
の添加量を少なくしなければならない。しかしな
がら、耐結晶化の点からひ素の添加量を低減する
こと好ましくなく、また連続印字時の耐磨耗性の
点からは膜厚をある程度以上に薄くできないとい
う問題があつた。 〔発明の目的〕 本発明の目的は、上述の問題点を解決して、波
長660〜800nmの長波長領域で優れた電子写真特
性を有し、かつ耐磨耗性、耐結晶化性が良好で、
しかもしわの発生のみられない電子写真用セレン
感光体を提供することにある。 〔発明の要点〕 本発明の目的は、導電性基体上に、非晶質セレ
ンまたは非晶質セレン・テルル合金からなるキヤ
リア輸送層と、20〜50重量%のテルルを含有する
非晶質セレン・テルル合金からなるキヤリア発生
層と、非晶質セレン・ひ素合金からなる表面保護
層とを順次積層してなる電子写真用感光体におい
て、前記表面保護層を2層に分割し、キヤリア発
生層に接する第1表面保護層のひ素含有量を外表
面となる第2表面保護層のひ素含有量よりも少な
くすることにより達成される。 〔発明の実施例〕 表面保護層(以下下OCLとも称す)の具備す
べき性能の一つは耐結晶化性能であり、OCLの
構成材料であるセレン・ひ素合金のひ素含有量に
依存する。実用上有効なひ素含有量を求めるため
次の実験を行つた。外径12mmのアルミニウユ円筒
を温度60℃に保持し、その外表面上にセレンを膜
厚50μmに真空蒸着しキヤリア輸送層(以下CTL
とも称する)とした。この層の上にテルルを44重
量%含有するセレン・テルル合金を膜厚0.3μmに
フラツユ蒸着しキヤリア発生層(以下CGLとも
称する)とした。この層の上にOCLとして第1
表に示す組成および膜厚の層をフラツシユ蒸着し
感光体試料No.1〜No.4を作製した。これらの試料
を市販の印刷速度20枚/分、一成分現像剤現像方
式の半導体レーザプリンタに装着し、B4用紙に
て1500枚印字したが、いずれも極めて鮮明な画像
が安定してえられた。続いてこれらの試料を50℃
の恒温雰囲気中に放置し、帯電能(コロナ放電に
て感光体表面に所定の帯電電位を与えるために必
要な感光体への流れ込み電流)の推移を調べた。
その結果、試料の表面結晶化の進行に伴う帯電能
の低下が認められたが、このような結晶化の始ま
るまでの放置時間は第1表に示すとおり試料によ
つて大幅に異つた。
[Technical Field to Which the Invention Pertains] The present invention relates to an electrophotographic photoreceptor having a photosensitive layer made of a selenium-based material and used in electrophotographic plain paper copying machines and optical printers. [Prior Art and Its Problems] In recent years, office automation has rapidly developed and become popular, and in conjunction with this, various printers have been actively developed as output devices. Among these, electrophotographic optical printers are attracting attention due to their high speed printing performance, high image quality, high reliability, and low noise. Recently, small optical printers with medium to low speeds (printing speeds of around 1,000 lines/minute) have been developed one after another. These small optical printers are mainly used by connecting to office computers, and are also used as output devices for Japanese word processors and optical disk file systems, and there is a movement to use them for high-speed facsimiles. . Furthermore, recently there has been a strong demand for digital plain paper copying machines that can be equipped with various intelligent functions, and this is also used as an output unit. Laser light, light emitting diodes, and the like are used as light sources for optical printers, and laser light is often used because of its high printing speed and high image quality. Although He--Ne laser light has been mainly used as the laser light, semiconductor laser light has recently come into use due to the demand for miniaturization of equipment. Optical printers use scanning laser beams or light emitting diode arrays, etc., in a direction corresponding to the image to be printed.
It consists of a part that controls on/off, and an electrophotographic part that receives the control light to form an electrostatic latent image corresponding to the print image on a charged photoreceptor and prints the latent image as a toner image. . The electrophotographic part has the same configuration as a conventional electrophotographic copier, but
The performance of the photoreceptor used here is an important factor that influences the printing speed of the printer, the quality and stability of the printed image. As described above, optical printers use semiconductor laser light and light emitting diode arrays, and the wavelength of semiconductor laser light is around 790 nm, and the wavelength of light from light emitting diodes is around 660 to 680 nm. For such long-wavelength light, photoreceptors that are conventionally applied mainly to electrophotographic copying machines cannot be used. In conventional photoreceptors, photoconductive materials are selected to have high photosensitivity in the visible wavelength region, and the structure of the photosensitive layer is also devised.
This is because the photosensitivity to longer wavelength light is extremely low. Various studies are underway regarding photoconductive materials and photosensitive layer configurations that can be used in photoreceptors suitable for such long wavelength light, but electrophotographic properties (charging potential, photosensitivity, residual potential, etc.) ), there are still many problems in terms of fatigue properties, environmental resistance, printing durability, etc. Studies are also underway on selenium photoreceptors, including a carrier transport layer made of amorphous selenium or an amorphous selenium-tellurium alloy on a conductive substrate; A functionally separated photoreceptor with a multilayer structure has been proposed in which a carrier generation layer made of a tellurium alloy and a surface protection layer made of amorphous selenium or an amorphous alloy of tellurium or arsenic and selenium are sequentially laminated. However, although the photoreceptor having such a structure has excellent electrophotographic properties with respect to long wavelength light, there is a problem in its durability. In other words, in the case of a photoreceptor made of amorphous selenium or an amorphous selenium-tellurium alloy, the surface protective layer exhibits practically sufficient characteristics in terms of initial electrophotographic characteristics and abrasion resistance during continuous printing. , the amorphous surface protective layer tends to crystallize if left at high temperatures after printing. On the other hand, in the case of a photoreceptor whose surface protective layer is made of an amorphous selenium-arsenic alloy,
The glass transition point of selenium-arsenic alloys is higher than that of selenium and selenium-tellurium alloys, and therefore transition from amorphous to crystalline, that is, crystallization, is less likely to occur, eliminating the above-mentioned drawback of easy crystallization of the surface protective layer. be able to. Furthermore, as shown in Figure 2, as the amount of arsenic added increases, the glass transition point of the selenium-arsenic alloy increases, so in order to suppress crystallization of the surface protective layer, the more amount of arsenic added, the better. become. However, because the carrier transport layer and carrier generation layer, which are the underlayers, are made of amorphous selenium or an amorphous selenium-tellurium alloy, the photoreceptor is exposed to high temperatures above the glass transition point (approximately 45°C) of the underlayer for a long time. When exposed, a disadvantage arises in that the surface protective layer wrinkles due to the difference in thermal expansion coefficient between the base layer and the surface protective layer. In order to prevent the occurrence of wrinkles, it is necessary to reduce the thickness of the surface protective layer or reduce the amount of arsenic added. However, from the viewpoint of crystallization resistance, it is not desirable to reduce the amount of arsenic added, and from the viewpoint of abrasion resistance during continuous printing, there is a problem that the film thickness cannot be made thinner than a certain level. [Object of the Invention] The object of the present invention is to solve the above-mentioned problems and to provide a material that has excellent electrophotographic properties in the long wavelength range of 660 to 800 nm, and has good abrasion resistance and crystallization resistance. in,
The object of the present invention is to provide a selenium photoreceptor for electrophotography that does not cause wrinkles. [Summary of the Invention] An object of the present invention is to provide a carrier transport layer made of amorphous selenium or an amorphous selenium-tellurium alloy on a conductive substrate, and amorphous selenium containing 20 to 50% by weight of tellurium. - In an electrophotographic photoreceptor in which a carrier generation layer made of a tellurium alloy and a surface protection layer made of an amorphous selenium-arsenic alloy are sequentially laminated, the surface protection layer is divided into two layers, and the carrier generation layer is formed by dividing the surface protection layer into two layers. This is achieved by making the arsenic content of the first surface protective layer that is in contact with the outer surface smaller than the arsenic content of the second surface protective layer that is the outer surface. [Embodiments of the Invention] One of the properties that the surface protective layer (hereinafter also referred to as lower OCL) should have is crystallization resistance, which depends on the arsenic content of the selenium-arsenic alloy that is the constituent material of OCL. The following experiment was conducted to determine the practically effective arsenic content. An aluminum cylinder with an outer diameter of 12 mm is maintained at a temperature of 60°C, and selenium is vacuum-deposited on its outer surface to a thickness of 50 μm to form a carrier transport layer (CTL).
(also referred to as). On this layer, a selenium-tellurium alloy containing 44% by weight of tellurium was flattened to a thickness of 0.3 μm to form a carrier generation layer (hereinafter also referred to as CGL). On top of this layer, the first
Photoreceptor samples No. 1 to No. 4 were prepared by flash-depositing layers having the compositions and film thicknesses shown in the table. These samples were attached to a commercially available semiconductor laser printer with a printing speed of 20 sheets per minute and a one-component developer development method, and 1,500 sheets were printed on B4 paper, and extremely clear images were stably obtained in all cases. . These samples were then heated to 50°C.
The sample was left in a constant-temperature atmosphere, and the change in chargeability (current flowing into the photoreceptor required to give a predetermined charging potential to the photoreceptor surface by corona discharge) was examined.
As a result, it was observed that the chargeability of the samples decreased as the surface crystallization progressed, but the standing time until such crystallization started varied greatly depending on the sample as shown in Table 1.

【表】 このような結晶化開始時間の差異はOCLに添
加されるひ素の量が多くなるにつれてOCLの熱
安定性が向上するためで、ひ素含有量が3原子%
以上であれば実用的に充分安定である。 OCLの具備すべき他の性能は耐磨耗性である。
試料1に準じてCGLまでを形成し、その上にひ
素を3原子%含有するセレン・ひ素合金からなる
膜厚2.2μmのOCLを形成してなる感光体試料No.5
について、二成分現像剤、反転現像、フアブラシ
クリーニング方式の半導体レーザプリンタにより
連続印字試験を行なつた。幅18インチ、長さ11イ
ンチの用紙で14万枚印字を行つた後、光干渉型厚
み計にてOCLの膜厚を調べたところ、0.05μmの
磨耗が認められた。実用的には少なくとも10万枚
以上の耐刷性が必要とされるのでOCLの膜厚と
してはばらつきを考慮し若干の余裕をみて0.1μm
以上は必要である。 以上の結果により、感光体の耐熱性、耐磨耗性
を良好に保つためには、OCLは3原子%以上の
ひ素を含有するセレン・ひ素合金からなる膜厚
0.1μm以上の層でなければならない。しかしなが
ら、このようなOCLを有する感光体は高温雰囲
気にさらされるとOCL表面にしわが生じる。本
発明はさらにOCLをひ素の濃度の異なる2層に
分割することによりこのしわの発生を除去する。 以下本発明を図面および比較例を参照しながら
実施例により説明する。第1図は本発明の感光体
の概念的断面図を示し、10は導電性基体、20
はキヤリア輸送層(CTL)、30はキヤリア発生
層(CGL)、40は第1表面保護層(OCL1)4
1および第2表面保護層(OCL2)42よりな
る表面保護層である。 実施例 1、2 導電性基体10としての外径120mmのアルミニ
ウム円筒を温度60℃に保持し、その外表面にセレ
ン(Se)を膜厚50μmに真空蒸着しCTL20を形
成した。その上にテルル(Te)を44重量%含有
するセレン・テルル合金を膜厚0.3μmにフラツシ
ユ蒸着しCGL30とした。この層の上にOCL1
およびOCL2として第2表に示す組成および膜
厚の層をフラツシユ蒸着にて順次形成し実施例1
および実施例2の感光体を作製した。 比較例 1、2、3、4 導電性基体10上にOCL20およびCGL30
までは実施例1に準じて形成し、その上にOCL
1として第2表に示す組成および膜厚の層をフラ
ツシユ蒸着にて形成し、OCL2は形成しない感
光体、すなわち単層OCLである比較例1、2、
3および4の感光体を作製した。 以上6種の感光体を温度65℃の恒温槽中に60分
間放置したのち室温雰囲気に取り出し、感光体表
面のしわの発生を調べた。その結果をOCL1お
よびOCL2の組成および膜厚に対応させて第2
表に示す。
[Table] This difference in crystallization start time is due to the fact that as the amount of arsenic added to OCL increases, the thermal stability of OCL improves.
If it is above, it is sufficiently stable for practical use. Another property that OCL should have is wear resistance.
Photoreceptor sample No. 5, in which up to CGL was formed according to sample 1, and OCL with a thickness of 2.2 μm made of a selenium-arsenic alloy containing 3 at % arsenic was formed on top of the CGL.
Continuous printing tests were conducted using a semiconductor laser printer using a two-component developer, reversal development, and a furbrush cleaning method. After printing on 140,000 sheets of paper with a width of 18 inches and a length of 11 inches, the OCL film thickness was examined using an optical interference thickness gauge, and 0.05 μm of wear was observed. Practically speaking, printing durability of at least 100,000 sheets is required, so the OCL film thickness is 0.1 μm, taking into account variations and allowing a slight margin.
The above is necessary. Based on the above results, in order to maintain good heat resistance and abrasion resistance of the photoreceptor, OCL should be made of a selenium-arsenic alloy containing 3 at.% or more of arsenic.
The layer must be 0.1 μm or larger. However, when a photoreceptor having such an OCL is exposed to a high temperature atmosphere, wrinkles occur on the OCL surface. The present invention further eliminates this wrinkling by dividing the OCL into two layers with different concentrations of arsenic. The present invention will be explained below by way of examples with reference to drawings and comparative examples. FIG. 1 shows a conceptual cross-sectional view of the photoreceptor of the present invention, in which 10 is a conductive substrate, 20
is the carrier transport layer (CTL), 30 is the carrier generation layer (CGL), and 40 is the first surface protection layer (OCL1) 4
This is a surface protective layer consisting of a first surface protective layer (OCL2) and a second surface protective layer (OCL2) 42. Examples 1 and 2 An aluminum cylinder with an outer diameter of 120 mm serving as the conductive substrate 10 was maintained at a temperature of 60° C., and selenium (Se) was vacuum-deposited on its outer surface to a thickness of 50 μm to form a CTL 20. On top of this, a selenium-tellurium alloy containing 44% by weight of tellurium (Te) was flash-deposited to a thickness of 0.3 μm to obtain CGL30. OCL1 on top of this layer
In Example 1, layers with the composition and film thickness shown in Table 2 were sequentially formed as OCL2 by flash vapor deposition.
And a photoreceptor of Example 2 was produced. Comparative Examples 1, 2, 3, 4 OCL20 and CGL30 on conductive substrate 10
The steps up to this point were formed according to Example 1, and then OCL was formed on top of that.
Comparative Examples 1 and 2, in which a layer having the composition and film thickness shown in Table 2 as 1 were formed by flash vapor deposition, but OCL 2 was not formed, that is, a single layer OCL;
Photoreceptors Nos. 3 and 4 were produced. The above six types of photoreceptors were left in a constant temperature bath at a temperature of 65° C. for 60 minutes, and then taken out into a room temperature atmosphere to examine the occurrence of wrinkles on the surface of the photoreceptors. The results were compared to the composition and film thickness of OCL1 and OCL2, and a second
Shown in the table.

【表】 表中、〇印はしわの発生が見られなかつたこと
を示し、△印はしわの発生が若干見られたことを
示し、×印は多くのしわが発生したことを示す。 前述のように、OCLまたは少くともOCLの外
表面は3原子%以上のひ素を含有するセレン・ひ
素合金からなる膜厚0.1μm以上の層でなければな
らないが、OCLが単層の場合には膜厚0.1μmの比
較例1においてすでにしわの発生が見られ、比較
例2、3、4と膜厚が増すにつれてしわは増加す
る傾向にある。これに対して本発明によりOCL
を2層に分割し、CGLに接する内側の層である
OCL1のひ素含有量を少なくした場合には、外
表面であるOCL2の膜厚を実施例1、2の如く
厚くしてもしわの発生は見られず、その効果は極
めて顕著である。 実施例 3、4、5 CGL30までは実施例1に準じて形成し、そ
の上にOCL1およびOCL2として第3表に示す
組成および膜厚の層をフラツシユ蒸着にて順次形
成し、実施例3、4および5の感光体を作製し
た。 比較例 5、6 OCL1の組成および膜厚を第3表に示すよう
にした以外は実施例3と同様にして比較例5、6
の感光体を作製した。 以上5種類の感光体について、第2表の結果を
えた場合と同じ加熱試験を行ない、しわの発生状
況を調べた。その結果を同じく第3表にまとめて
示す。
[Table] In the table, ◯ indicates that no wrinkles were observed, △ indicates that some wrinkles were observed, and × indicates that many wrinkles occurred. As mentioned above, the OCL or at least the outer surface of the OCL must be a layer of selenium-arsenic alloy containing at least 3 atomic percent arsenic with a thickness of 0.1 μm or more, but if the OCL is a single layer, Wrinkles were already observed in Comparative Example 1 with a film thickness of 0.1 μm, and the wrinkles tended to increase as the film thickness increased in Comparative Examples 2, 3, and 4. On the other hand, according to the present invention, OCL
is divided into two layers, and the inner layer is in contact with CGL.
When the arsenic content of OCL1 is reduced, no wrinkles are observed even if the thickness of OCL2, which is the outer surface, is increased as in Examples 1 and 2, and the effect is extremely significant. Examples 3, 4, 5 Up to CGL30 were formed according to Example 1, and layers with the compositions and film thicknesses shown in Table 3 as OCL1 and OCL2 were sequentially formed thereon by flash vapor deposition. Photoreceptors Nos. 4 and 5 were produced. Comparative Examples 5 and 6 Comparative Examples 5 and 6 were carried out in the same manner as in Example 3, except that the composition and film thickness of OCL1 were changed as shown in Table 3.
A photoreceptor was fabricated. The above five types of photoreceptors were subjected to the same heating test as in the case where the results shown in Table 2 were obtained, and the occurrence of wrinkles was investigated. The results are also summarized in Table 3.

【表】 第3表よりOCL1のひ素含有量は0.5原子%以
上が必要である。またOCL1のひ素含有量が2
原子%より多くなるとOCL2のひ素含有量に近
づき過ぎ、OCLを2層に分割した効果が少なく
なるから、OCL1のひ素含有量は2原子%以下
が好ましい。 実施例 6、7 OCL1の膜厚をそれぞれ0.4μm、2.0μmとした
以外は実施例5と同様にして実施例6および7の
感光体を作製した。 比較例 7 OCL1の膜厚を2.3μmとした以外は実施例6と
同じ比較例7の感光体を作製した。 以上の3種類の感光体について同様にしわの発
生状況を調べたが、実施例6、7についてはしわ
の発生は見られず、比較例7については若干のし
わの発生が見られた、OCL1の膜厚としては
2.0μm以下が好適である。一方OCL40の膜厚と
しては、感光体の帯電能の点で0.5μm以上が必要
であり、OCL2の膜厚が0.1μmの場合を考慮する
とOCL1の膜厚は0.4μm以上が必要である。 実施例 8、9、10 CGL30までは実施例1に準じて形成し、そ
の上にOCL1およびOCL2として第4表に示す
組成および膜厚の層をフラツシユ蒸着にて順次形
成し、実施例8、9および10の感光体を作成し
た。 比較例 8 OCL2の膜厚を0.8μmとした以外は実施例9と
同じ比較例8の感光体を作製した。 比較例 9 OCL2の膜厚を0.7μmとした以外は実施例10と
同じ比較例9の感光体と作製した。 以上の5種類の感光体について同様にしわの発
生状況を調べた。その結果を第4表にまとめて示
す。
[Table] From Table 3, the arsenic content of OCL1 must be 0.5 at% or more. Also, the arsenic content of OCL1 is 2
If it exceeds atomic %, the arsenic content of OCL 1 will be too close to the arsenic content of OCL 2, and the effect of dividing OCL into two layers will be reduced, so it is preferable that the arsenic content of OCL 1 is 2 atomic % or less. Examples 6 and 7 Photoreceptors of Examples 6 and 7 were produced in the same manner as in Example 5, except that the film thickness of OCL1 was changed to 0.4 μm and 2.0 μm, respectively. Comparative Example 7 A photoconductor of Comparative Example 7 was produced which was the same as Example 6 except that the film thickness of OCL1 was 2.3 μm. The above three types of photoreceptors were similarly investigated for the occurrence of wrinkles, and no wrinkles were observed in Examples 6 and 7, while some wrinkles were observed in Comparative Example 7, OCL1 As the film thickness of
It is preferably 2.0 μm or less. On the other hand, the thickness of the OCL 40 is required to be 0.5 μm or more in view of the charging ability of the photoreceptor, and considering the case where the thickness of the OCL 2 is 0.1 μm, the thickness of the OCL 1 is required to be 0.4 μm or more. Examples 8, 9, 10 Up to CGL30 were formed according to Example 1, and layers with the compositions and film thicknesses shown in Table 4 as OCL1 and OCL2 were sequentially formed thereon by flash vapor deposition. Photoreceptors Nos. 9 and 10 were prepared. Comparative Example 8 A photoconductor of Comparative Example 8 was produced which was the same as Example 9 except that the film thickness of OCL2 was 0.8 μm. Comparative Example 9 A photoreceptor was prepared in Comparative Example 9, which was the same as Example 10 except that the film thickness of OCL2 was 0.7 μm. The occurrence of wrinkles was similarly investigated for the above five types of photoreceptors. The results are summarized in Table 4.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、導電性基体上に、非晶質セレ
ンまたは非晶質セレン・テルル合金からなるキヤ
リア輸送層と、20〜50重量%のテルルを含有する
非晶質セレン・テルル合金からなるキヤリア発生
層と、非晶質セレン・ひ素合金からなる表面保護
層とを順次積層してなる電子写真用感光体におい
て、表面保護層を2層に分割し、キヤリア発生層
に接する第1表面保護層をひ素濃度の低い層とし
外表面となる側の第2表面保護層をひ素濃度の高
い層とする。このような構成とすることにより、
660〜800nmの長波長領域で優れた電子写真特性
を有し、かつ、耐磨耗性、耐結晶化性が良好で、
しかもしわの発生のみられない感光体をえること
ができる。キヤリア発生層と第2表面保護層との
間に両層の中間の熱膨張係数を有する第1表面保
護層を介在させることにより両層間の熱歪の差を
緩和し感光体表面のしわの発生を防ぐことが可能
となり、キヤリア発生層に長波長光に充分な光感
度を有する程多量のテルルを含有させても、その
表面をひ素濃度の多い耐結晶化性の良いセレン・
ひ素合金層でしかも充分な耐刷性がえられる膜厚
の層で保護することが可能となつたからである。 今後急速な発展、普及が期待される光プリンタ
あるいはインテリジエンスなデジタル普通紙複写
機用の優れた電子写真用感光体をえられる本発明
の効果は極めて大である。
According to the present invention, a carrier transport layer made of amorphous selenium or an amorphous selenium-tellurium alloy is provided on a conductive substrate, and a carrier transport layer made of an amorphous selenium-tellurium alloy containing 20 to 50% by weight of tellurium. In an electrophotographic photoreceptor in which a carrier generation layer and a surface protection layer made of an amorphous selenium-arsenic alloy are sequentially laminated, the surface protection layer is divided into two layers, and a first surface protection layer in contact with the carrier generation layer is used. The layer has a low arsenic concentration, and the second surface protection layer on the side that becomes the outer surface has a high arsenic concentration. By having such a configuration,
It has excellent electrophotographic properties in the long wavelength region of 660 to 800 nm, and has good abrasion resistance and crystallization resistance.
Moreover, a photoreceptor without wrinkles can be obtained. By interposing a first surface protective layer having a thermal expansion coefficient intermediate between the carrier generation layer and the second surface protective layer, the difference in thermal strain between the two layers is alleviated and wrinkles on the surface of the photoreceptor are caused. Even if the carrier generation layer contains a large enough amount of tellurium to have sufficient photosensitivity to long wavelength light, the surface can be covered with selenium, which has a high arsenic concentration and has good crystallization resistance.
This is because it has become possible to protect the film with an arsenic alloy layer that is thick enough to provide sufficient printing durability. The present invention has an extremely large effect in that it can provide an excellent electrophotographic photoreceptor for optical printers or intelligent digital plain paper copying machines, which are expected to rapidly develop and become popular in the future.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す概念的断面
図、第2図はセレン・ひ素合金のひ素含有量とガ
ラス転移点との関係を示す線図である。 10……導電性基体、20……キヤリア輸送
層、30……キヤリア発生層、40……表面保護
層、41……第1表面保護層、42……第2表面
保護層。
FIG. 1 is a conceptual cross-sectional view showing one embodiment of the present invention, and FIG. 2 is a diagram showing the relationship between the arsenic content and the glass transition point of a selenium-arsenic alloy. DESCRIPTION OF SYMBOLS 10... Conductive substrate, 20... Carrier transport layer, 30... Carrier generation layer, 40... Surface protective layer, 41... First surface protective layer, 42... Second surface protective layer.

Claims (1)

【特許請求の範囲】[Claims] 1 導電性基体上に、非晶質セレンまたは10重量
%以下のテルルを含有する非晶質セレン・テルル
合金からなるキヤリア輸送層と、20〜50重量%テ
ルルを含有する非晶質セレン・テルル合金からな
るキヤリア発生層と、0.5〜2.0原子%のひ素を含
有する非晶質セレン・ひ素合金からなり、膜厚が
0.4〜2.0μmの第1表面保護層と3〜5原子%のひ
素を含有する非晶質セレン・ひ素合金からなり、
膜厚が0.1〜0.7μmの第2表面保護層とがこの順に
積層されていることを特徴とする電子写真用セレ
ン感光体。
1 A carrier transport layer made of amorphous selenium or an amorphous selenium-tellurium alloy containing 10% by weight or less tellurium on a conductive substrate, and amorphous selenium-tellurium containing 20 to 50% by weight tellurium. The carrier generation layer consists of an alloy and an amorphous selenium-arsenic alloy containing 0.5 to 2.0 at% arsenic.
Consisting of a first surface protective layer of 0.4 to 2.0 μm and an amorphous selenium-arsenic alloy containing 3 to 5 at% arsenic,
A selenium photoreceptor for electrophotography, characterized in that a second surface protective layer having a thickness of 0.1 to 0.7 μm is laminated in this order.
JP12088085A 1985-06-04 1985-06-04 Selenium photosensitive body for electrophotography Granted JPS61278858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12088085A JPS61278858A (en) 1985-06-04 1985-06-04 Selenium photosensitive body for electrophotography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12088085A JPS61278858A (en) 1985-06-04 1985-06-04 Selenium photosensitive body for electrophotography

Publications (2)

Publication Number Publication Date
JPS61278858A JPS61278858A (en) 1986-12-09
JPH0569216B2 true JPH0569216B2 (en) 1993-09-30

Family

ID=14797251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12088085A Granted JPS61278858A (en) 1985-06-04 1985-06-04 Selenium photosensitive body for electrophotography

Country Status (1)

Country Link
JP (1) JPS61278858A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0792610B2 (en) * 1987-06-10 1995-10-09 富士電機株式会社 Electrophotographic photoconductor
JPH077215B2 (en) * 1987-10-26 1995-01-30 富士電機株式会社 Electrophotographic photoconductor
JPH01219753A (en) * 1988-02-26 1989-09-01 Fuji Electric Co Ltd Electrophotographic selenic sensitive body
JPH01316750A (en) * 1988-06-16 1989-12-21 Fuji Electric Co Ltd Electrophotographic sensitive body
JP2638185B2 (en) * 1988-12-23 1997-08-06 富士電機株式会社 Manufacturing method of photoreceptor for electrophotography
JPH02201376A (en) * 1989-01-30 1990-08-09 Fuji Electric Co Ltd Electrophotographic sensitive body
JPH03149563A (en) * 1989-11-07 1991-06-26 Fuji Electric Co Ltd Electrophotographic sensitive body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171961A (en) * 1983-03-18 1984-09-28 Ricoh Co Ltd Electrophotographic sensitive body
JPS6043662A (en) * 1983-08-19 1985-03-08 Fuji Electric Co Ltd Selenium photosensitive body for electrophotography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171961A (en) * 1983-03-18 1984-09-28 Ricoh Co Ltd Electrophotographic sensitive body
JPS6043662A (en) * 1983-08-19 1985-03-08 Fuji Electric Co Ltd Selenium photosensitive body for electrophotography

Also Published As

Publication number Publication date
JPS61278858A (en) 1986-12-09

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