JPH0534808B2 - - Google Patents
Info
- Publication number
- JPH0534808B2 JPH0534808B2 JP11702384A JP11702384A JPH0534808B2 JP H0534808 B2 JPH0534808 B2 JP H0534808B2 JP 11702384 A JP11702384 A JP 11702384A JP 11702384 A JP11702384 A JP 11702384A JP H0534808 B2 JPH0534808 B2 JP H0534808B2
- Authority
- JP
- Japan
- Prior art keywords
- batio
- glass frit
- powder
- srb
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000843 powder Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010304 firing Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 11
- 239000002482 conductive additive Substances 0.000 description 7
- 230000035939 shock Effects 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 3
- 229940088601 alpha-terpineol Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Description
【発明の詳細な説明】
産業上の利用分野
本発明は機器の保温、加熱などに用いられる面
状発熱体のなかで、ガラスフリツトを必要としな
い厚膜型正特性半導体素子の製造方法に関するも
のである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a method for manufacturing a thick-film positive temperature coefficient semiconductor element that does not require a glass frit, among planar heating elements used for heat insulation and heating of equipment. be.
従来例の構成とその問題点
BaTiO3系半導体からなる素子は所定温度以上
で急激に抵抗値が増大するスイツチング特性及び
スイツチング後の自己発熱特性を有し、昇温特性
が速く自己温度制御機能を有し、外部の制御回路
を必要としないため広く利用されている。Conventional structure and its problems Elements made of BaTiO 3 -based semiconductors have switching characteristics in which the resistance value increases rapidly above a certain temperature and self-heating characteristics after switching, and have fast temperature rise characteristics and self-temperature control functions. It is widely used because it does not require an external control circuit.
従来の正特性サーミスタ発熱体はBaTiO3系半
導体粉末を加圧成形した後、焼成して得ていた
が、実用可能な厚膜状の正特性サーミスタ発熱体
を得ることは困難であるとされていた。 Conventional positive temperature coefficient thermistor heating elements have been obtained by press-molding BaTiO 3 semiconductor powder and then firing it, but it is said to be difficult to obtain a practical thick film positive temperature coefficient thermistor heating element. Ta.
従来、BaTiO3系半導体を膜状に加工する方法
としては、次のようなものが知られている。 Conventionally, the following methods are known for processing BaTiO 3 -based semiconductors into a film.
デイスク形に成形した後、焼成したものを薄
片に研磨する。 After being formed into a disk shape, it is fired and polished into thin pieces.
真空蒸着法により基板上に薄膜を形成する。 A thin film is formed on the substrate by vacuum evaporation.
BaTiO3系半導体粉末に導電性の添加剤とガ
ラスフリツトを加えてペースト状とし、基板上
にスクリーン印刷した後、焼成する。 Conductive additives and glass frit are added to BaTiO 3 -based semiconductor powder to form a paste, which is then screen printed onto a substrate and then fired.
しかし、前記の方法ではBaTiO3系半導体の
結晶粒子径が大きくもろいため、膜状にまで研磨
することは甚だ困難である。また、前記の方法
では操作が面倒であり、発熱体に適した大電力を
得ることがむつかしい。さらに、前記の方法で
は面積抵抗が高くなり易く制御が困難であり、発
熱体には適さず、またあらかじめガラスフリツト
を調合、焼成しておかなければならず、面倒であ
ると共にガラスフリツトの材質によつては
BaTiO3系半導体の持つスイツチング特性及び自
己発熱特性を劣化させる。そして、ガラスフリツ
トを加えることによりBaTiO3系半導体とガラス
フリツトの耐熱性、熱膨張係数の差から熱衝撃に
弱く、熱伝導が妨げられる。さらに、導電性の添
加剤とガラスフリツトを均一に混合することは困
難であり、特性にばらつきを生じる原因の一つと
なつている。 However, in the above method, it is extremely difficult to polish the BaTiO 3 -based semiconductor into a film because the crystal grain size of the BaTiO 3 -based semiconductor is large and brittle. Furthermore, the above method is cumbersome to operate, and it is difficult to obtain a large amount of power suitable for the heating element. Furthermore, the above-mentioned method tends to increase sheet resistance and is difficult to control, is not suitable for heating elements, and requires preparing and firing the glass frit in advance, which is troublesome and depends on the material of the glass frit. teeth
Deteriorates the switching characteristics and self-heating characteristics of BaTiO 3 semiconductors. Adding glass frit makes it vulnerable to thermal shock due to the difference in heat resistance and coefficient of thermal expansion between BaTiO 3 -based semiconductors and glass frit, which impedes heat conduction. Furthermore, it is difficult to uniformly mix the conductive additive and the glass frit, which is one of the causes of variations in properties.
発明の目的
そこで本発明は前記従来技術の欠点であつた製
造上の繁雑さを解決し、ガラスフリツトを用いず
に厚膜状にすることにより熱衝撃性、熱伝道性に
優れ、均一な特性を持つ厚膜型正特性半導体素子
を容易に製造できる方法を提供することを目的と
している。Purpose of the Invention Therefore, the present invention solves the drawback of the prior art, which is the complexity of manufacturing, and achieves excellent thermal shock resistance, thermal conductivity, and uniform properties by forming a thick film without using glass frit. It is an object of the present invention to provide a method for easily manufacturing a thick film type positive characteristic semiconductor element having the following characteristics.
発明の構成
本発明の厚膜型正特性半導体素子の製造方法
は、BaTiO3系半導体粉末にSrB6を1.0〜60.0重量
％加えて、ペースト状にした混合物を基板上に塗
布して厚膜状とした後、焼成することにより厚膜
型正特性半導体素子を得ようとするものである。Structure of the Invention The method for manufacturing a thick film type positive characteristic semiconductor device of the present invention includes adding 1.0 to 60.0% by weight of SrB 6 to BaTiO 3 based semiconductor powder and applying the paste-like mixture onto a substrate to form a thick film. The purpose is to obtain a thick-film type positive characteristic semiconductor element by baking the wafer and then firing it.
従来の導電性添加剤とガラスフリツトを用いる
方法ではBaTiO3系半導体粉末同志の電気的接続
のために導電性添加剤が必要であり、BaTiO3系
粉末同志を物理的に接続するのにガラスフリツト
が必要であつた。 In the conventional method of using conductive additives and glass frits, conductive additives are required to electrically connect BaTiO 3 -based semiconductor powders to each other, and glass frits are required to physically connect BaTiO 3 -based powders to each other. It was hot.
しかし、本発明によれば導電性添加剤とガラス
フリツトの両方の役割をはたすものとして、
SrB6を用いたところに特徴を有している。この
SrB6は常温では導体であり、1000〜1100℃以上
の温度になると一部分が分解して粒子表面に
B2O3が析出するが、粒子内部は元のままで表面
のB2O3膜により分解が阻止される。従つて、
BaTiO3系半導体粉末と、SrB6粉末を混合して焼
成すると、SrB6の表面に析出するB2O3がガラス
フリツトと同じ役割をし、粒子内部が導電性添加
剤の役割をするため、SrB6を添加するだけでガ
ラスフリツトを必要としない厚膜型正特性半導体
素子が得られる。 However, according to the present invention, as a material that functions as both a conductive additive and a glass frit,
The feature is that SrB 6 is used. this
SrB 6 is a conductor at room temperature, but at temperatures above 1000-1100℃, a portion of it decomposes and forms on the particle surface.
Although B 2 O 3 precipitates, the inside of the particle remains intact and decomposition is prevented by the B 2 O 3 film on the surface. Therefore,
When BaTiO 3 -based semiconductor powder and SrB 6 powder are mixed and fired, the B 2 O 3 precipitated on the surface of SrB 6 plays the same role as glass frit, and the inside of the particles acts as a conductive additive. By simply adding 6 , it is possible to obtain a thick film type positive characteristic semiconductor device that does not require a glass frit.
また、導電性金属を添加することにより、熱伝
導性が悪いガラスフリツトに較べ熱伝導性が良く
なり、熱衝撃性も向上する。 Furthermore, by adding a conductive metal, thermal conductivity becomes better than glass frit which has poor thermal conductivity, and thermal shock resistance also improves.
実施例の説明
以下に本発明の実施例をあげて第１図と共に具
体的に説明する。DESCRIPTION OF EMBODIMENTS Examples of the present invention will be specifically explained below with reference to FIG.
実施例 １
BaTiO3に1.0モル％のNb2O5を加え1300℃で焼
成した後、粉砕してBaTiO3系半導体粉末を得
る。前記BaTiO3系半導体粉末に全重量に対して
10.0重量％のSrB6粉末を加え均一に混合し、さら
にα−テルピネオールを加えてペースト状混合物
１を作る。Example 1 1.0 mol % of Nb 2 O 5 is added to BaTiO 3 and fired at 1300°C, followed by pulverization to obtain BaTiO 3 -based semiconductor powder. Based on the total weight of the BaTiO 3 -based semiconductor powder
10.0% by weight of SrB 6 powder is added and mixed uniformly, and α-terpineol is further added to form paste mixture 1.
一方、Al2O3などからなる基板２上にあらかじ
め一対のAgなどの導電性物質からなる電極３，
４を設けておき、前記電極３，４上にその電極
３，４の一部が残るように前記ペースト状混合物
１をスクリーン印刷などにより塗布し、室温から
10℃／minの昇温速度で1350℃まで昇温し、１時
間保持した後、炉内放冷する。このようにして厚
膜型正特性半導体素子を得た。 On the other hand, on a substrate 2 made of Al 2 O 3 etc., a pair of electrodes 3 made of a conductive material such as Ag,
4, and apply the paste mixture 1 by screen printing or the like so that a portion of the electrodes 3 and 4 remain on the electrodes 3 and 4, and then heat the mixture from room temperature to
The temperature was raised to 1350°C at a heating rate of 10°C/min, held for 1 hour, and then allowed to cool in the furnace. In this way, a thick film type positive characteristic semiconductor device was obtained.
実施例 ２
実施例１と同様にしてBaTiO3に3.0モル％の
Y2O3を加え1250℃で焼成した後、粉砕して
BaTiO3系半導体粉末を得る。前記BaTiO3系半
導体粉末に全重量に対して18.5重量％のSrB6粉末
を加え均一に混合し、さらにα−テルピネオール
を加えてペースト状混合物１にする。ついで、実
施例１と同様に前記基板２上にあらかじめ前記電
極３，４を設けておき、前記電極３，４の一部が
残るように前記ペースト状混合物１をスクリーン
印刷などにより塗布し、室温から10℃／minの昇
温速度で1300℃まで昇温し、30分間保持した後、
炉内放冷する。このようにして厚膜型半導体素子
を得た。Example 2 In the same manner as in Example 1, 3.0 mol% of BaTiO 3 was added.
After adding Y 2 O 3 and baking at 1250℃, crush it.
Obtain BaTiO 3 based semiconductor powder. SrB 6 powder of 18.5% by weight based on the total weight is added to the BaTiO 3 -based semiconductor powder and mixed uniformly, and α-terpineol is further added to form paste mixture 1. Next, as in Example 1, the electrodes 3 and 4 are provided on the substrate 2 in advance, and the paste mixture 1 is applied by screen printing or the like so that a portion of the electrodes 3 and 4 remains. After increasing the temperature from 1300℃ at a rate of 10℃/min and holding it for 30 minutes,
Allow to cool in the furnace. In this way, a thick film semiconductor element was obtained.
こうして得た厚膜型半導体素子の室温での面積
抵抗は実施例１の場合5.6KΩ／cm2であり、実施
例２の場合2.9KΩ／cm2であり、各々の温度と抵
抗値の関係は第２図に示した通りであつた。第２
図でＡは実施例１により得られた素子の特性、Ｂ
は実施例２の場合の特性である。 The sheet resistance of the thus obtained thick film semiconductor device at room temperature is 5.6KΩ/cm 2 in Example 1 and 2.9KΩ/cm 2 in Example 2, and the relationship between temperature and resistance value for each is as follows: It was as shown in Figure 2. Second
In the figure, A indicates the characteristics of the device obtained in Example 1, and B
is the characteristic in the case of Example 2.
発明の効果
以上のように本発明の製造方法によれば、
SrB6粉末が従来の導電性添加剤とガラスフリツ
トの両方の役割をはたし、電気的接続、物理的接
続に十分な効果があり、ガラスフリツトなしで厚
膜型正特性半導体素子が得られることとなる。Effects of the Invention As described above, according to the manufacturing method of the present invention,
SrB 6 powder plays the role of both a conventional conductive additive and a glass frit, and has sufficient effects for electrical and physical connections, making it possible to obtain thick-film positive temperature semiconductor devices without glass frit. Become.
また、ガラスフリツトという熱伝導の悪いもの
にかわつて熱伝導のよい導電性金属のSrB6を用
いることにより、熱伝導が良くなり熱衝撃性も向
上する。さらに、スクリーン印刷などにより製造
できることから作業が容易で量産が可能である。 Furthermore, by using SrB 6 , a conductive metal with good thermal conductivity, in place of glass frit, which has poor thermal conductivity, thermal conductivity is improved and thermal shock resistance is improved. Furthermore, since it can be manufactured by screen printing or the like, the work is easy and mass production is possible.
なお、本発明においてSrTiO3系半導体粉末と
してはBaTiO3に各種の添加剤を加えて半導体化
したものであればなんでもよい。また、SrB6粉
末の添加量を全重量に対して１〜60重量％と規定
したのは、１重量％未満では面積抵抗が大きくな
りすぎ発熱体に不適当であり、BaTiO3粉末同志
の物理的固定もできなく、一方60重量％を越える
と面積抵抗が小さくなりすぎ、自己制御特性
（PTC特性）が小さくなり発熱体に不適当になる
ためである。さらに、BaTiO3系半導体粉末と
SrB6粉末をペースト状にするのに有機溶剤（実
施例ではα−テルピネオール）を用いたが、ペー
スト状にできるものであればなんでもよい。 In the present invention, any SrTiO 3 -based semiconductor powder may be used as long as it is made into a semiconductor by adding various additives to BaTiO 3 . In addition, the addition amount of SrB 6 powder was specified as 1 to 60% by weight based on the total weight because if it was less than 1% by weight, the area resistance would be too large and it would be unsuitable for a heating element. On the other hand, if it exceeds 60% by weight, the area resistance becomes too small and the self-control characteristics (PTC characteristics) become small, making it unsuitable for heating elements. In addition, BaTiO 3 -based semiconductor powder and
An organic solvent (α-terpineol in the example) was used to make the SrB 6 powder into a paste, but any solvent may be used as long as it can be made into a paste.
以上述べたように本発明によれば、ガラスフリ
ツトを必要としない厚膜型正特性半導体素子が容
易に製造でき、その実用上の効果は大きいもので
ある。 As described above, according to the present invention, it is possible to easily manufacture a thick film type positive characteristic semiconductor device that does not require a glass frit, and its practical effects are great.
第１図は本発明方法により得られる厚膜型正特
性半導体素子を示す一部切欠斜視図、第２図は本
発明の実施例による素子の温度と抵抗値の関係を
示す図である。
１……ペースト状混合物、２……基板、３，４
……電極。
FIG. 1 is a partially cutaway perspective view showing a thick film positive temperature coefficient semiconductor device obtained by the method of the present invention, and FIG. 2 is a diagram showing the relationship between temperature and resistance value of the device according to an embodiment of the present invention. 1...Paste mixture, 2...Substrate, 3, 4
……electrode.
Claims (1)
％加え、ペースト状にした混合物を基板状に塗布
して厚膜状とした後、焼成してなることを特徴と
する厚膜型正特性半導体素子の製造方法。1. A thick film type positive characteristic characterized in that it is made by adding 1.0 to 60.0% by weight of SrB 6 to BaTiO 3 semiconductor powder and making a paste mixture and applying it to a substrate to form a thick film and then firing it. A method for manufacturing semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11702384A JPS60261109A (en) | 1984-06-07 | 1984-06-07 | Method of producing thick film positive temperature coefficient semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11702384A JPS60261109A (en) | 1984-06-07 | 1984-06-07 | Method of producing thick film positive temperature coefficient semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60261109A JPS60261109A (en) | 1985-12-24 |
| JPH0534808B2 true JPH0534808B2 (en) | 1993-05-25 |
Family
ID=14701528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11702384A Granted JPS60261109A (en) | 1984-06-07 | 1984-06-07 | Method of producing thick film positive temperature coefficient semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60261109A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061442Y2 (en) * | 1987-02-19 | 1994-01-12 | 株式会社ブリヂストン | Pneumatic radial tires |
-
1984
- 1984-06-07 JP JP11702384A patent/JPS60261109A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60261109A (en) | 1985-12-24 |
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