JPH05347376A - Lead frame for resin-sealed semiconductor device and manufacture of resin-sealed semiconductor device - Google Patents

Lead frame for resin-sealed semiconductor device and manufacture of resin-sealed semiconductor device

Info

Publication number
JPH05347376A
JPH05347376A JP31829691A JP31829691A JPH05347376A JP H05347376 A JPH05347376 A JP H05347376A JP 31829691 A JP31829691 A JP 31829691A JP 31829691 A JP31829691 A JP 31829691A JP H05347376 A JPH05347376 A JP H05347376A
Authority
JP
Japan
Prior art keywords
resin
lead frame
semiconductor device
insulating tape
tie bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31829691A
Other languages
Japanese (ja)
Other versions
JP2712957B2 (en
Inventor
Hideyuki Nishikawa
秀幸 西川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3318296A priority Critical patent/JP2712957B2/en
Publication of JPH05347376A publication Critical patent/JPH05347376A/en
Application granted granted Critical
Publication of JP2712957B2 publication Critical patent/JP2712957B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce a cost for manufacturing, maintenance, etc., of a die required for cutting and removing a tie bar, and to improve quality of a semiconductor device by eliminating a process of cutting and removing the tie bar. CONSTITUTION:A lead frame without a tie bar having an insulating tape 5 is used in an area near an outer periphery 4 of a part to be resin-sealed. Thermosetting resin is dropped onto the insulating tape 5 in a clearance between a plurality of adjacent leads 2 and thermally set. The resin can dam sealing resin instead of a tie bar during resin sealing by a resin sealing die.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は樹脂封止型半導体装置用
リードフレームの構造及びそのリードフレームを用いた
樹脂封止型半導体装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a lead frame for a resin-sealed semiconductor device and a method of manufacturing a resin-sealed semiconductor device using the lead frame.

【0002】[0002]

【従来の技術】従来、樹脂封止型半導体装置は、図4の
平面図に示すようなリードフレームの素子搭載部1に半
導体素子を搭載し、素子とリード2の先端とを金属細線
で接続し、その後リードフレームを樹脂封止金型で型締
めし、型内に封止樹脂を注入することにより、素子搭載
部1に搭載された半導体素子,金属細線,内部リードな
どを樹脂封止して製造される。
2. Description of the Related Art Conventionally, in a resin-sealed semiconductor device, a semiconductor element is mounted on an element mounting portion 1 of a lead frame as shown in the plan view of FIG. 4, and the element and the tip of a lead 2 are connected by a fine metal wire. After that, the lead frame is clamped with a resin-sealing die, and the sealing resin is injected into the die to resin-seal the semiconductor element mounted on the element mounting portion 1, the thin metal wires, the internal leads, and the like. Manufactured.

【0003】この場合、樹脂封止金型の上型と下型には
さまれて外部に導出した複数のリードにおいて隣り合う
リードのすきまに充填される樹脂は、型の周囲を所定の
間隔で取り囲むように配置され複数のリードを連結する
タイバー3によってせき止められるようにしているのが
一般的である。
In this case, the resin filled in the clearance between adjacent leads in a plurality of leads led out by being sandwiched between the upper mold and the lower mold of the resin-sealed mold, surrounds the mold at a predetermined interval. Generally, the tie bars 3 are arranged so as to surround the leads and connect a plurality of leads, so that the leads are generally restrained.

【0004】その後、タイバーを切断除去し、外部リー
ドに半田めっき等の外装処理を行い、外部リードを所定
の形状に成形して半導体装置は完成する。
After that, the tie bar is cut and removed, the outer leads are subjected to an exterior treatment such as solder plating, and the outer leads are molded into a predetermined shape to complete the semiconductor device.

【0005】[0005]

【発明が解決しようとする課題】上述した従来の技術で
は、樹脂封止後に複数のリードを連結しているタイバー
を切断除去しなければならない。タイバーは通常、金型
により切断除去されるが、半導体装置の形状が異なるご
とに専用の金型の製作しなければならず、多大の費用が
かかるのと同時に、金型製作に長時間を要するという問
題がある。
In the above-mentioned conventional technique, the tie bar connecting the plurality of leads must be cut and removed after the resin sealing. The tie bar is usually cut and removed by a mold, but it is necessary to manufacture a dedicated mold for each different shape of the semiconductor device, which is very expensive, and at the same time, it takes a long time to manufacture the mold. There is a problem.

【0006】また、外部リードのピッチが小さくなるに
つれて、金型の製造は難しくなり、種々の問題が生じて
きた。たとえば、外部リードのピッチが0.4mmで、
外部リードの幅が0.2mmの場合には、切断刃の先端
の厚さは最大でも0.4−0.2=0.2mmにしかな
らない。このように細い切断刃はかす詰まり等の負荷に
より刃先が容易に破損してしまうため、保守に手間がか
かるという問題がある。
Further, as the pitch of the external leads becomes smaller, it becomes difficult to manufacture the mold, and various problems have occurred. For example, if the external lead pitch is 0.4 mm,
When the width of the outer lead is 0.2 mm, the thickness of the tip of the cutting blade is 0.4-0.2 = 0.2 mm at maximum. In such a thin cutting blade, the blade tip is easily damaged by a load such as clogging of dust, which causes a problem that maintenance is troublesome.

【0007】また、金型によりタイバーを切断除去する
ときのリードフレームの位置合せは、通常リードフレー
ムに設けられている位置決め穴に、金型に設けられてい
る位置決めピンを挿入することによってなされるが、リ
ードフレームおよび金型の製作時の誤差により多少の位
置ずれが生じる。外部リードピッチが小さい半導体装置
の場合は、たとえわずかの位置ずれであっても切断刃が
リードに食い込んでしまい、切断歩留りや品質を低下さ
せてしまうという問題がある。
Positioning of the lead frame when the tie bar is cut and removed by the die is performed by inserting a positioning pin provided in the die into a positioning hole usually provided in the lead frame. However, some misalignment occurs due to an error in manufacturing the lead frame and the mold. In the case of a semiconductor device having a small external lead pitch, there is a problem that the cutting blade bites into the lead even if the positional deviation is slight, and the cutting yield and quality are reduced.

【0008】[0008]

【課題を解決するための手段】本発明の樹脂封止型半導
体装置用リードフレームは、タイバーを有さず、樹脂封
止される部分の外縁近傍に沿って絶縁テープを有してい
る。このようなリードフレームを用いて樹脂封止型半導
体装置を製造する際には、リードフレームを樹脂封止金
型で型締めし樹脂封止する工程の前に、リードフレーム
の隣り合う複数のリードのすきまの絶縁テープ上に樹脂
等の絶縁物を形成させておく。
The lead frame for a resin-sealed semiconductor device of the present invention does not have a tie bar, but has an insulating tape along the vicinity of the outer edge of the portion to be resin-sealed. When manufacturing a resin-encapsulated semiconductor device using such a lead frame, a plurality of adjacent leads of the lead frame are provided before the step of resin-encapsulating the lead frame with a resin-sealing die. An insulating material such as resin is formed on the insulating tape in the gap.

【0009】[0009]

【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の実施例1のリードフレームの部分斜
視図である。図2は図1のリードフレームの使用方法を
説明するための部分断面図である。
The present invention will be described below with reference to the drawings. 1 is a partial perspective view of a lead frame according to a first embodiment of the present invention. FIG. 2 is a partial sectional view for explaining a method of using the lead frame of FIG.

【0010】実施例1のリードフレームはタイバーを有
しないリードフレームであり、図1に示すように、樹脂
封止される部分の外縁4を跨ぐようにリード2の裏面に
リードと直角に絶縁テープ5が接着されている。図1に
おいては、リード2の厚さが0.15mm,幅が0.2
mm,隣り合うリード2のすきまが0.2mm,絶縁テ
ープ5の幅が1mmとなっている。また、絶縁テープ5
の材質はポリイミドであり、絶縁テープ5とリード2の
接着にはアクリル系接着剤を使用している。次に、図1
のリードフレームを使用して樹脂封止型半導体装置を製
造する方法を説明する。まず図1のリードフレームの素
子搭載部(図示せず)に半導体素子を搭載し、素子とリ
ードの先端とを金属細線で接続し、次に図2に示すよう
に、隣り合う複数のリード2のすきまの絶縁テープ5上
に液状の熱硬化性樹脂6を滴下し、熱硬化させる。図2
の断面位置は、図1の樹脂封止される部分の外縁4に相
当する。図2においては、リード2の裏面に絶縁テープ
5が接着されており、リード2のすきまの絶縁テープ5
上に樹脂6が形成されている。
The lead frame of Example 1 is a lead frame having no tie bar, and as shown in FIG. 1, an insulating tape is formed on the back surface of the lead 2 at right angles to the lead so as to straddle the outer edge 4 of the resin-sealed portion. 5 is glued. In FIG. 1, the lead 2 has a thickness of 0.15 mm and a width of 0.2.
mm, the clearance between adjacent leads 2 is 0.2 mm, and the width of the insulating tape 5 is 1 mm. Insulation tape 5
Is made of polyimide, and an acrylic adhesive is used to bond the insulating tape 5 and the lead 2. Next, FIG.
A method of manufacturing a resin-encapsulated semiconductor device using the lead frame will be described. First, a semiconductor element is mounted on the element mounting portion (not shown) of the lead frame of FIG. 1, the element and the tip of the lead are connected by a thin metal wire, and then, as shown in FIG. A liquid thermosetting resin 6 is dropped onto the insulating tape 5 having a clearance and is thermoset. Figure 2
The cross-sectional position of corresponds to the outer edge 4 of the resin-sealed portion in FIG. In FIG. 2, the insulating tape 5 is adhered to the back surface of the lead 2, and the insulating tape 5 in the clearance of the lead 2 is attached.
The resin 6 is formed on the top.

【0011】次にこのリードフレームを樹脂封止金型で
型締めし、型内に封止樹脂を注入することにより、樹脂
封止するのであるが、図2に示す隣り合う複数のリード
2のすきまにすでに形成されいる樹脂6により、封止樹
脂はせき止められる。従来技術では、樹脂封止後、タイ
バーを切断除去する必要があったが、本実施例ではその
必要がない。
Next, the lead frame is clamped with a resin-sealing die and the resin is sealed by injecting a sealing resin into the mold. The sealing resin is dammed by the resin 6 already formed in the gap. In the prior art, it was necessary to cut and remove the tie bar after resin sealing, but this is not necessary in this embodiment.

【0012】次に、実施例2を説明する。図3は実施例
2のリードフレームの部分斜視図である。実施例2にお
いては、図3に示すように、実施例1と同様樹脂封止さ
れる部分の外縁4近傍に絶縁テープが接着されている
が、実施例1とは異なり、3種の絶縁テープが接着され
ている。ここで、第1の絶縁テープ7及び第2の絶縁テ
ープ8の幅は0.5mm,第3の絶縁テープ9の幅は2
mmとなっている。実施例2では、第1の絶縁テープと
第2の絶縁テープ8の間に液状の熱硬化性樹脂を滴下さ
せて、隣り合う複数のリード2のすきまの第3の絶縁テ
ープ9上に樹脂を形成させる。
Next, a second embodiment will be described. FIG. 3 is a partial perspective view of the lead frame of the second embodiment. In the second embodiment, as shown in FIG. 3, the insulating tape is adhered to the vicinity of the outer edge 4 of the resin-sealed portion as in the first embodiment, but unlike the first embodiment, three types of insulating tapes are used. Are glued together. Here, the width of the first insulating tape 7 and the second insulating tape 8 is 0.5 mm, and the width of the third insulating tape 9 is 2 mm.
mm. In the second embodiment, a liquid thermosetting resin is dropped between the first insulating tape and the second insulating tape 8 so that the resin is placed on the third insulating tape 9 in the gap between the adjacent leads 2. Let it form.

【0013】このようにすると、滴下された液状の熱硬
化性樹脂が第1の絶縁テープ7と第2の絶縁テープ8に
支えられるため、複数のリードのすきまの樹脂形成を安
定して行うことができるという利点がある。
In this way, the dropped liquid thermosetting resin is supported by the first insulating tape 7 and the second insulating tape 8, so that the resin can be stably formed in the clearances between the leads. The advantage is that

【0014】[0014]

【発明の効果】以上説明してきたように本発明は、タイ
バーのないリードフレームの樹脂封止される部分の外縁
近傍に絶縁テープを設け、隣り合う複数のリードのすき
まの絶縁テープ上に樹脂等の絶縁物を形成させることに
より、従来技術においては半導体装置の形状が異なるご
とに製作する必要のあった高価なタイバー切断除去用プ
レス金型を不要にすることができるという効果がある。
また、従来技術では、リード間ピッチが小さくなるにつ
れて、タイバー切断ずれによる不良が増加する傾向にあ
ったが、本発明では、タイバー切断ずれによる不良を完
全になくすことができ、安定したリード形状を得ること
ができるという効果がある。また従来技術では、タイバ
ー切断除去時にプレスによる衝撃が生じたが、本発明で
は衝撃は全くなくなり、半導体装置の品質向上がはかれ
るという効果がある。
As described above, according to the present invention, the insulating tape is provided in the vicinity of the outer edge of the resin-sealed portion of the lead frame having no tie bar, and the resin or the like is provided on the insulating tape having the clearances between the adjacent leads. By forming the above-mentioned insulator, it is possible to eliminate the need for an expensive press die for tie bar cutting and removing which was required to be manufactured for each different shape of the semiconductor device in the prior art.
Further, in the conventional technology, defects due to tie bar cutting misalignment tended to increase as the lead pitch decreased, but in the present invention, defects due to tie bar cutting misalignment can be completely eliminated, and a stable lead shape can be obtained. There is an effect that can be obtained. Further, in the prior art, the impact due to the press occurred when the tie bar was cut and removed, but the present invention has the effect of eliminating the impact at all and improving the quality of the semiconductor device.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1のリードフレームの部分斜視
図である。
FIG. 1 is a partial perspective view of a lead frame according to a first embodiment of the present invention.

【図2】図1のリードフレームの使用方法を説明するた
めの部分断面図である。
FIG. 2 is a partial cross-sectional view illustrating a method of using the lead frame of FIG.

【図3】本発明の実施例2のリードフレームの部分斜視
図である。
FIG. 3 is a partial perspective view of a lead frame according to a second embodiment of the present invention.

【図4】従来のリードフレームの部分平面図である。FIG. 4 is a partial plan view of a conventional lead frame.

【符号の説明】[Explanation of symbols]

1 素子搭載部 2 リード 3 タイバー 4 樹脂封止される部分の外縁 5 絶縁テープ 6 樹脂 7 第1の絶縁テープ 8 第2の絶縁テープ 9 第3の絶縁テープ 1 Element mounting part 2 Lead 3 Tie bar 4 Outer edge of resin-sealed part 5 Insulating tape 6 Resin 7 First insulating tape 8 Second insulating tape 9 Third insulating tape

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 樹脂封止型半導体装置用リードフレーム
において、タイバーが形成されていないリードフレーム
の樹脂封止される部分の外縁近傍に沿って絶縁テープが
装着されていることを特徴とする樹脂封止型半導体装置
用リードフレーム。
1. A resin-encapsulated semiconductor device lead frame, wherein an insulating tape is attached along the vicinity of an outer edge of a resin-sealed portion of a lead frame in which a tie bar is not formed. Lead frame for encapsulated semiconductor device.
【請求項2】 樹脂封止型半導体装置の製造方法におい
て、前記リードフレームを使用し、樹脂封止金型で型締
めする以前に、前記リードフレームの隣り合う複数のリ
ードのすきまのうちの前記絶縁テープ上に絶縁物を形成
する工程を有することを特徴とする樹脂封止型半導体装
置の製造方法。
2. A method for manufacturing a resin-encapsulated semiconductor device, wherein the lead frame is used, and before the die is clamped by a resin-encapsulated mold, the gap among a plurality of leads adjacent to each other in the lead frame is used. A method of manufacturing a resin-encapsulated semiconductor device, comprising a step of forming an insulator on an insulating tape.
【請求項3】 樹脂封止型半導体装置の製造方法におい
て、前記製造方法で形成されたリードフレームを使用
し、樹脂封止金型のキャビティ外縁部をこのリードフレ
ームに装着されている絶縁テープ上に位置させて型締め
し、樹脂封止する工程を有することを特徴とする樹脂封
止型半導体装置の製造方法。
3. A method of manufacturing a resin-sealed semiconductor device, wherein a lead frame formed by the manufacturing method is used, and an outer edge portion of a cavity of the resin-sealed mold is mounted on the lead frame. A method of manufacturing a resin-encapsulated semiconductor device, comprising the steps of: locating at, and clamping with a resin.
JP3318296A 1991-12-03 1991-12-03 Method for manufacturing resin-encapsulated semiconductor device Expired - Lifetime JP2712957B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3318296A JP2712957B2 (en) 1991-12-03 1991-12-03 Method for manufacturing resin-encapsulated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3318296A JP2712957B2 (en) 1991-12-03 1991-12-03 Method for manufacturing resin-encapsulated semiconductor device

Publications (2)

Publication Number Publication Date
JPH05347376A true JPH05347376A (en) 1993-12-27
JP2712957B2 JP2712957B2 (en) 1998-02-16

Family

ID=18097620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3318296A Expired - Lifetime JP2712957B2 (en) 1991-12-03 1991-12-03 Method for manufacturing resin-encapsulated semiconductor device

Country Status (1)

Country Link
JP (1) JP2712957B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282905A (en) * 2007-05-09 2008-11-20 Denso Corp Semiconductor device and manufacturing method therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191598A (en) * 1983-04-15 1984-10-30 Nissan Motor Co Ltd Cleaning device for press die
JPS61650A (en) * 1984-06-07 1986-01-06 数馬 国治 Control apparatus of jacquard shuttle in jacquard knitting machine
JPS6151933A (en) * 1984-08-22 1986-03-14 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59191598A (en) * 1983-04-15 1984-10-30 Nissan Motor Co Ltd Cleaning device for press die
JPS61650A (en) * 1984-06-07 1986-01-06 数馬 国治 Control apparatus of jacquard shuttle in jacquard knitting machine
JPS6151933A (en) * 1984-08-22 1986-03-14 Hitachi Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008282905A (en) * 2007-05-09 2008-11-20 Denso Corp Semiconductor device and manufacturing method therefor

Also Published As

Publication number Publication date
JP2712957B2 (en) 1998-02-16

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