JPH05346346A - Pyroelectric type infrared ray sensor - Google Patents

Pyroelectric type infrared ray sensor

Info

Publication number
JPH05346346A
JPH05346346A JP15965491A JP15965491A JPH05346346A JP H05346346 A JPH05346346 A JP H05346346A JP 15965491 A JP15965491 A JP 15965491A JP 15965491 A JP15965491 A JP 15965491A JP H05346346 A JPH05346346 A JP H05346346A
Authority
JP
Japan
Prior art keywords
infrared ray
pyroelectric
type infrared
infrared sensor
pyroelectric type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15965491A
Other languages
Japanese (ja)
Inventor
Yoshiharu Taniguchi
義晴 谷口
Yasuo Miyawaki
康男 宮脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Ceramic Co Ltd
Original Assignee
Nippon Ceramic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Ceramic Co Ltd filed Critical Nippon Ceramic Co Ltd
Priority to JP15965491A priority Critical patent/JPH05346346A/en
Publication of JPH05346346A publication Critical patent/JPH05346346A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a pyroelectric type infrared ray sensor with a wide range of detection area without using an auxiliary object such as a lens or a plurality of pyroelectric type infrared ray sensor units. CONSTITUTION:In the title sensor with a plurality of infrared ray detection parts, a light reception surface 3 of each infrared ray detection part is not provided on the same plane and is directed toward an arbitrary direction. The sensitivity directional characteristics of the title sensor can be widened without using an auxiliary object such as a lens or a plurality of pyroelectric type infrared ray sensor units.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、焦電型赤外線センサに
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric infrared sensor.

【0002】[0002]

【従来の技術】従来の方法による焦電型赤外線センサの
構造の一例を図3−a)に示す。薄板状に形成した焦電
体基板(2)およびその表裏に設けた対向する電極
(1)から構成される。ここで近年、一つの赤外線セン
サで広範囲な検知エリアを持つものが要求されている。
しかし従来の構造では赤外線検知部(以下、素子と呼ぶ
ことにする)の受光面(3)は単一の平面であるため、
センサの感度指向特性は図3−b)に示すようなもので
あり、その指向特性を広範囲化することは困難であっ
た。このため、レンズ、ミラー等の光学系を用いたり、
複数の赤外線センサユニットを用いる必要があるという
問題点があった。
2. Description of the Related Art An example of the structure of a conventional pyroelectric infrared sensor is shown in FIG. It is composed of a pyroelectric substrate (2) formed in a thin plate and opposing electrodes (1) provided on the front and back sides thereof. Here, in recent years, one infrared sensor having a wide detection area is required.
However, in the conventional structure, the light-receiving surface (3) of the infrared detector (hereinafter referred to as an element) is a single plane,
The sensitivity directivity of the sensor is as shown in FIG. 3-b), and it was difficult to widen the directivity. Therefore, using optical systems such as lenses and mirrors,
There is a problem that it is necessary to use a plurality of infrared sensor units.

【0003】[0003]

【発明が解決しようとする課題】上述のように、レン
ズ、ミラー等の光学系を用いたり、複数の赤外線センサ
ユニットを使用したりすることなしに広範囲な検知エリ
アを持つ焦電型赤外線センサを提供することが、本発明
の解決しようとする課題である。
As described above, a pyroelectric infrared sensor having a wide detection area without using an optical system such as a lens and a mirror or using a plurality of infrared sensor units is provided. The provision is the problem to be solved by the present invention.

【0004】[0004]

【課題を解決するための手段】本発明は上記の課題を解
決するためになされたものである。その手段とするとこ
ろは、受光面を曲面により構成するか又は複数の方向を
向いた複数の面で構成する素子を同一基板上に構成する
ことである。
The present invention has been made to solve the above problems. The means to do so is to form the light receiving surface with a curved surface or to form an element with a plurality of surfaces facing a plurality of directions on the same substrate.

【0005】[0005]

【作用】上記のように構成されている本発明において、
その検知エリアは曲面の法線方向又は複数の面の法線方
向に従来の方法による検知エリアを重ね合わせたような
ものとなる。従って、全体としてみた場合の検知エリア
は従来の方法によるものに比べ、明らかに広範囲なもの
となる。
In the present invention configured as described above,
The detection area is as if the detection areas according to the conventional method are overlapped in the normal direction of the curved surface or the normal direction of a plurality of surfaces. Therefore, the detection area as a whole is obviously wider than that of the conventional method.

【0006】[0006]

【実施例】以下、本発明による焦電型赤外線センサの実
施例を図面を用いて詳細に説明する。図1は本発明の一
実施例を示す焦電型赤外線センサの断面図、図2は図1
−a)の製造方法を示す図である。まず機械的切削例え
ばダイシング法によって図2−a)のように(PbTi
3−PbZrO3)系の焦電材料からなる焦電体基板
(2)を加工する。次に表面に電極材料をメッキにより
形成し、さらに受光面(3)の電極材料を機械的研磨す
ることにより図2−b)のように電極(1)を形成す
る。そして再び機械的切削により図2−c)のように形
成する。以上により本発明による焦電型赤外線センサを
形成する。ここでは焦電体基板(2)の材料としては
(PbTiO3−PbZrO3)系のものを用いている
が、他の材料例えばPbTiO3系、NbTaO3系、L
iTaO3系、TGS系等の焦電材料であればよく、ま
た結晶状態は、単結晶体、多結晶体のどちらでもよく、
さらにポリマとの複合体でもよい。ここでは各加工にダ
イシング法を用いているが、この他にエッチング、レー
ザ加工、イオンミリング等の方法によるものでもよく、
同等の効果が得られる。ここでは電極(1)の形成はメ
ッキを用いているが、蒸着等の気相薄膜形成方法による
ものでもよい。ここでは受光面(3)部分の電極材料の
除去には機械的研磨を用いているが、他の方法例えばエ
ッチング等によるものでもよく、またリフトオフ法、マ
スクを用いた気相薄膜形成方法等により最初から形成し
ない場合でもよい。この場合は素子の基本となる構造と
して特願平3−103135号として本出願人が出願し
たものに記載されている構造を用いているが、図1−
b)に示すように焦電体基板(2)の裏面に凹部を設
け、その内面と受光面とにそれぞれ電極(1)を設けて
従来の方法のような構造としてもよい。ここでは各受光
面(3)は平面であるが曲面でもよい。また図1−b)
に示すように受光面が1つの曲面となっていてもよい。
各素子の配線方法は、ここでは直列接続としたが、並列
接続等にしたものでもよく、また基板上で配線しても、
外部で配線してもよく、素子の配線方法によって、さま
ざまな応用に対処することができる。
Embodiments of the pyroelectric infrared sensor according to the present invention will be described below in detail with reference to the drawings. 1 is a sectional view of a pyroelectric infrared sensor showing an embodiment of the present invention, and FIG.
It is a figure which shows the manufacturing method of -a). First, by mechanical cutting such as dicing, as shown in FIG.
O 3 -PbZrO 3) processing the pyroelectric substrate (2) made of a pyroelectric material system. Next, an electrode material is formed on the surface by plating, and the electrode material on the light receiving surface (3) is mechanically polished to form the electrode (1) as shown in FIG. Then, it is formed again by mechanical cutting as shown in FIG. As described above, the pyroelectric infrared sensor according to the present invention is formed. Here, as the material of the pyroelectric substrate (2), a (PbTiO 3 —PbZrO 3 ) based material is used, but other materials such as PbTiO 3 based, NbTaO 3 based, L
Any pyroelectric material such as iTaO 3 series or TGS series may be used, and the crystal state may be either a single crystal body or a polycrystal body,
Further, it may be a complex with a polymer. Although the dicing method is used for each processing here, other methods such as etching, laser processing, and ion milling may be used.
The same effect can be obtained. Although the electrode (1) is formed by plating here, it may be formed by a vapor phase thin film forming method such as vapor deposition. Here, mechanical polishing is used to remove the electrode material on the light-receiving surface (3), but other methods such as etching may be used, and a lift-off method, a vapor phase thin film forming method using a mask, etc. may be used. It may not be formed from the beginning. In this case, the structure described in Japanese Patent Application No. 3-103135 filed by the present applicant is used as the basic structure of the element.
As shown in (b), a recess may be provided on the back surface of the pyroelectric substrate (2), and electrodes (1) may be provided on the inner surface and the light receiving surface of the pyroelectric substrate (2) to provide a structure as in the conventional method. Here, each light receiving surface (3) is a flat surface, but may be a curved surface. Fig. 1-b)
The light receiving surface may be a single curved surface as shown in FIG.
The wiring method of each element is serial connection here, but it may be parallel connection, or wiring on the substrate,
It may be wired externally, and various applications can be dealt with depending on the wiring method of the element.

【0007】図4に本発明による焦電型赤外線センサの
感度指向特性を示す。点線で示すような従来の方法によ
る指向特性を重ね合わせた実線のような指向特性となっ
ており、従来のものに比べ明らかに指向特性が広範囲な
ものになっていることが確認できる。
FIG. 4 shows the sensitivity directivity characteristic of the pyroelectric infrared sensor according to the present invention. The directional characteristics shown by the dotted line are the directional characteristics like the solid line obtained by superimposing the directional characteristics by the conventional method, and it can be confirmed that the directional characteristics are clearly wider than the conventional one.

【0008】[0008]

【発明の効果】以上説明したように、本発明はレンズ等
の補助的なものを使用したり、複数の赤外線センサを使
用したりすることなしに焦電型赤外線センサの感度指向
特性の広範囲化を可能とする点で工業的価値がある。ま
た、多様化する熱型赤外線センサの応用に対応でき、工
業的価値は大きい。
As described above, according to the present invention, the sensitivity directivity characteristic of the pyroelectric infrared sensor can be widened without using an auxiliary one such as a lens or using a plurality of infrared sensors. It is of industrial value in that it enables In addition, it can be applied to diversifying thermal infrared sensors and has great industrial value.

【0009】[0009]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による焦電型赤外線センサの一実施例の
構造を示す断面図である。
FIG. 1 is a sectional view showing the structure of an embodiment of a pyroelectric infrared sensor according to the present invention.

【図2】本発明による焦電型赤外線センサの一実施例の
製造方法を示す図である。
FIG. 2 is a diagram showing a manufacturing method of an embodiment of the pyroelectric infrared sensor according to the present invention.

【図3】従来の方法による焦電型赤外線センサの構造を
示す断面図と感度指向特性を示す図である。
FIG. 3 is a cross-sectional view showing a structure of a pyroelectric infrared sensor according to a conventional method and a diagram showing sensitivity directivity characteristics.

【図4】本発明による焦電型赤外線センサの一実施例の
感度指向特性を示す図である。
FIG. 4 is a diagram showing a sensitivity directivity characteristic of an embodiment of a pyroelectric infrared sensor according to the present invention.

【符合の説明】 1 電極 2 焦電体基板 3 受光面[Explanation of symbols] 1 electrode 2 pyroelectric substrate 3 light receiving surface

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 焦電型赤外線センサにおいて、その赤外
線検知部の受光面が複数の方向を向いた複数の面で構成
されることを特徴とする焦電型赤外線センサ。
1. A pyroelectric infrared sensor, characterized in that, in the pyroelectric infrared sensor, the light receiving surface of the infrared detecting section is composed of a plurality of surfaces facing a plurality of directions.
【請求項2】 焦電型赤外線センサにおいて、その赤外
線検知部の受光面が曲面であることを特徴とする焦電型
赤外線センサ。
2. The pyroelectric infrared sensor according to claim 1, wherein the light receiving surface of the infrared detector is a curved surface.
JP15965491A 1991-06-03 1991-06-03 Pyroelectric type infrared ray sensor Pending JPH05346346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15965491A JPH05346346A (en) 1991-06-03 1991-06-03 Pyroelectric type infrared ray sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15965491A JPH05346346A (en) 1991-06-03 1991-06-03 Pyroelectric type infrared ray sensor

Publications (1)

Publication Number Publication Date
JPH05346346A true JPH05346346A (en) 1993-12-27

Family

ID=15698434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15965491A Pending JPH05346346A (en) 1991-06-03 1991-06-03 Pyroelectric type infrared ray sensor

Country Status (1)

Country Link
JP (1) JPH05346346A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530841B2 (en) 2009-05-18 2013-09-10 Nec Corporation Infrared sensor, electronic device, and manufacturing method of infrared sensor
US8921791B2 (en) 2010-02-16 2014-12-30 Nec Corporation Infrared ray sensor, infrared ray detection device, and electronic apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530841B2 (en) 2009-05-18 2013-09-10 Nec Corporation Infrared sensor, electronic device, and manufacturing method of infrared sensor
US8921791B2 (en) 2010-02-16 2014-12-30 Nec Corporation Infrared ray sensor, infrared ray detection device, and electronic apparatus

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