JPH0534610B2 - - Google Patents
Info
- Publication number
- JPH0534610B2 JPH0534610B2 JP62503110A JP50311087A JPH0534610B2 JP H0534610 B2 JPH0534610 B2 JP H0534610B2 JP 62503110 A JP62503110 A JP 62503110A JP 50311087 A JP50311087 A JP 50311087A JP H0534610 B2 JPH0534610 B2 JP H0534610B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- detector
- radiation
- contact
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 description 66
- 239000012535 impurity Substances 0.000 description 30
- 238000001514 detection method Methods 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 28
- 239000004020 conductor Substances 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87894686A | 1986-06-26 | 1986-06-26 | |
| US878,946 | 1986-06-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01500536A JPH01500536A (ja) | 1989-02-23 |
| JPH0534610B2 true JPH0534610B2 (ru) | 1993-05-24 |
Family
ID=25373136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62503110A Granted JPH01500536A (ja) | 1986-06-26 | 1987-05-15 | 半導体放射線検出器 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0271522A1 (ru) |
| JP (1) | JPH01500536A (ru) |
| IL (1) | IL82600A (ru) |
| WO (1) | WO1988000397A1 (ru) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5001532A (en) * | 1989-09-06 | 1991-03-19 | Rockwell International Corporation | Impurity band conduction detector having photoluminescent layer |
| US5028971A (en) * | 1990-06-04 | 1991-07-02 | The United States Of America As Represented By The Secretary Of The Army | High power photoconductor bulk GaAs switch |
| JPH0485961A (ja) * | 1990-07-30 | 1992-03-18 | Mitsubishi Electric Corp | 光検知装置 |
| DE102009023807A1 (de) | 2009-06-03 | 2010-12-09 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren |
| CN102280456B (zh) * | 2011-05-11 | 2013-06-26 | 北京大学 | 一种红外焦平面阵列探测器集成结构及制作方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925164A (ja) * | 1982-07-30 | 1984-02-09 | Kanai Hiroyuki | アルカリ電池用セパレ−タ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4451842A (en) * | 1980-12-29 | 1984-05-29 | Rockwell International Corporation | Large scale integrated focal plane |
| US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
-
1987
- 1987-05-15 WO PCT/US1987/001110 patent/WO1988000397A1/en not_active Application Discontinuation
- 1987-05-15 EP EP19870903616 patent/EP0271522A1/en not_active Withdrawn
- 1987-05-15 JP JP62503110A patent/JPH01500536A/ja active Granted
- 1987-05-20 IL IL8260087A patent/IL82600A/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5925164A (ja) * | 1982-07-30 | 1984-02-09 | Kanai Hiroyuki | アルカリ電池用セパレ−タ |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1988000397A1 (en) | 1988-01-14 |
| EP0271522A1 (en) | 1988-06-22 |
| IL82600A (en) | 1991-06-30 |
| JPH01500536A (ja) | 1989-02-23 |
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