JPH05345675A - Setter for burning semiconductor ceramic - Google Patents

Setter for burning semiconductor ceramic

Info

Publication number
JPH05345675A
JPH05345675A JP4153888A JP15388892A JPH05345675A JP H05345675 A JPH05345675 A JP H05345675A JP 4153888 A JP4153888 A JP 4153888A JP 15388892 A JP15388892 A JP 15388892A JP H05345675 A JPH05345675 A JP H05345675A
Authority
JP
Japan
Prior art keywords
setter
ceramic
firing
zro
fired
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4153888A
Other languages
Japanese (ja)
Inventor
Hisashi Takahashi
恒 高橋
Toyoshi Iida
豊志 飯田
Yukio Matsunami
幸男 松波
Keiji Sato
恵二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Metals and Chemical Co Ltd
Original Assignee
Japan Metals and Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Metals and Chemical Co Ltd filed Critical Japan Metals and Chemical Co Ltd
Priority to JP4153888A priority Critical patent/JPH05345675A/en
Publication of JPH05345675A publication Critical patent/JPH05345675A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a setter for burning a semiconductor ceramic having excellent workability without causing adhesion to or reaction with the ceramic formed article to be burned. CONSTITUTION:The setter forms a SrTiO3 layer through a ZrO2-SrTiO3 intermediate layer on at least either one surface of a ZrO2 sheet. This setter is obtained by applying a SrTiO3 based ceramic having same composition as a semiconductor ceramic onto the surface of the ZrO2 sheet and burning the ceramic.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体セラミックス焼
成用セッターに関し、特にコンデンサやサーミスタなど
の電子部品に用いる半導体セラミックスを焼成する際に
用いるセッターについて提案する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a setter for firing semiconductor ceramics, and particularly to a setter used for firing semiconductor ceramics used for electronic parts such as capacitors and thermistors.

【0002】[0002]

【従来の技術】上記半導体セラミックスは、通常、所定
の割合に混合したセラミックス粉を仮焼し、次いで粉
砕,造粒してから、所定の形状に加圧成形し、その後、
このセラミック成形体を焼成することによって製造され
るのが一般的である。
2. Description of the Related Art The above-mentioned semiconductor ceramics are usually prepared by calcining ceramic powders mixed in a predetermined ratio, then crushing and granulating, and then press-molding them into a predetermined shape.
It is generally manufactured by firing this ceramic molded body.

【0003】このセラミック成形体の焼成は、この成形
体をAl2O3,ZrO2等のセッター上に、縦に積み重ねるか、
あるいは横に多数並べるかして焼成する、いずれかの方
法で行われていた。そして、これら成形体間には、成形
体どうしの反応を防止するために、成形体と同組成の粉
末を敷粉(とも粉)として用いていた。
Firing of this ceramic molded body is carried out by vertically stacking the molded body on a setter made of Al 2 O 3 , ZrO 2 or the like.
Alternatively, either of the methods of arranging a large number of them side by side and firing them was performed. Then, in order to prevent a reaction between the molded bodies, a powder having the same composition as that of the molded bodies is used as spread powder (together powder) between these molded bodies.

【0004】ところが、これらの粉末を敷粉として用い
ると、セラミック被焼成体に対して付着や反応を引き起
こし、焼結体の物性に悪影響を及ぼす。その結果、均質
な半導体セラミックスを得ることができず、歩留りを大
幅に低下させていた。特に、焼成用セッターと接触する
セラミック被焼成体は、敷粉を用いてもセッターからの
汚染が避けられず、その結果、このセッターと接触する
最下部の焼成体は不良品として廃棄されていた。
However, when these powders are used as spread powder, they cause adhesion or reaction to the ceramic body to be fired, which adversely affects the physical properties of the sintered body. As a result, homogeneous semiconductor ceramics could not be obtained, and the yield was significantly reduced. In particular, the ceramic to-be-fired body that comes into contact with the firing setter is inevitable to be contaminated from the setter even with the spread powder, and as a result, the lowest fired body that comes into contact with the setter was discarded as a defective product. ..

【0005】これに対し、従来、上記弊害を防止すべく
以下の提案がされている。すなわち、電子部品としての
セラミック素体の焼成時に、該セラミック素体と同一生
成分からなる既焼結体を、未焼結体である前記セラミッ
ク素体間に介在させた状態で前記セラミック素体を焼成
するセラミック素体の製造方法である(特開平2−2461
05号公報参照)。
On the other hand, the following proposals have heretofore been made to prevent the above-mentioned harmful effects. That is, at the time of firing the ceramic body as an electronic component, the ceramic body is formed by interposing a sintered body made of the same material as the ceramic body between the ceramic bodies which are unsintered bodies. This is a method for manufacturing a ceramic body to be fired (Japanese Patent Laid-Open No. 2461/1990)
(See Publication No. 05).

【0006】[0006]

【発明が解決しようとする課題】この従来技術によれ
ば、敷粉の代わりにセラミック被焼成体と同一組成から
なる既焼結体を用いているので、セラミック被焼成体に
対する敷粉の付着や反応を防止することができ、ひいて
はその歩留り向上を図ることができる。
According to this prior art, since a sintered body having the same composition as the ceramic body to be burned is used instead of the floor powder, adhesion of the floor powder to the ceramic body to be burned or The reaction can be prevented, and the yield can be improved.

【0007】しかしながら、この既焼結体は焼成用セッ
ターと接触反応するため、セッターと接触する最下部の
被焼成体は既焼結体を介在させてもセッターからの汚染
の影響を依然として受けるという課題を残していた。特
に、この傾向は、SrTiO3を高温度還元雰囲気中で焼成す
る場合において顕著であった。
However, since the pre-sintered body contacts and reacts with the setter for firing, even if the pre-sintered body in contact with the setter is interposed with the pre-sintered body, it is still affected by contamination from the setter. I was left with challenges. In particular, this tendency was remarkable when SrTiO 3 was fired in a high temperature reducing atmosphere.

【0008】また、この従来技術では、焼成すべきセラ
ミック成形体と同一組成の既焼結体を還元性雰囲気中で
の焼成に供する際に、この既焼結体をセラミック成形体
間に1つ1つ挟みこむという作業が必要となる。その結
果、作業性が著しく悪化し、生産性が低いという課題も
あった。
Further, according to this conventional technique, when a pre-sintered body having the same composition as the ceramic compact to be fired is subjected to firing in a reducing atmosphere, one of the pre-sintered bodies is placed between the ceramic compacts. The work of sandwiching one is required. As a result, there is a problem that workability is significantly deteriorated and productivity is low.

【0009】本発明の目的は、従来技術が抱える上記課
題を有利に解決できる焼成用セッターに関し、特に、セ
ラミック被焼成体に対して、付着や反応を引き起こすこ
となく、作業性に優れる半導体セラミックス焼成用セッ
ターを提供することにある。
The object of the present invention relates to a firing setter which can advantageously solve the above problems of the prior art, and in particular, firing of semiconductor ceramics which is excellent in workability without causing adhesion or reaction to a ceramic object to be fired. To provide a setter for

【0010】[0010]

【課題を解決するための手段】本発明者らは、上記目的
実現のために、鋭意研究した結果、耐熱性に優れたZrO2
板上に半導体セラミックスと同一組成であるセラミック
スを塗布,焼成して得た焼成用セッターは、セラミック
被焼成体に対して、付着や反応を引き起こすことなく、
しかも、半導体セラミックスの焼成作業を容易にし、生
産性向上に有効であることを突き止め、本発明に想到し
た。
Means for Solving the Problems As a result of intensive studies for realizing the above object, the present inventors have found that ZrO 2 having excellent heat resistance.
The firing setter obtained by coating and firing ceramics having the same composition as the semiconductor ceramics on the plate does not cause adhesion or reaction with respect to the ceramic firing target.
Moreover, the present invention has been conceived by finding that it is effective for facilitating the firing work of semiconductor ceramics and improving productivity.

【0011】すなわち、本発明は、ZrO2板の少なくとも
一方の表面に、半導体セラミックスと同一組成であるSr
TiO3系セラミックスを塗布,焼成することにより、前記
ZrO2板の表面にZrO2−SrTiO3中間層を介してSrTiO3層を
形成させてなる半導体セラミックス焼成用セッターであ
る。
That is, according to the present invention, on at least one surface of the ZrO 2 plate, Sr having the same composition as that of the semiconductor ceramics is used.
By coating and firing TiO 3 ceramics,
A setter for firing semiconductor ceramics, comprising a SrTiO 3 layer formed on the surface of a ZrO 2 plate via a ZrO 2 —SrTiO 3 intermediate layer.

【0012】[0012]

【作用】さて、本発明のセッターの特徴は、ZrO2板上
に、ZrO2−SrTiO3中間層を介して半導体セラミックスと
同一組成のSrTiO3層を形成させたことにあり、特に、本
発明のセッターは、耐熱材であるZrO2をベース材とし、
かつSrTiO3層とZrO2板の間には密着性を向上させるZrO2
−SrTiO3中間層が存在しているので、セッター全体とし
て耐久性に優れ、かつセラミック被焼成体と反応して悪
影響を及ぼすこともない。
The characteristic of the setter of the present invention is that the SrTiO 3 layer having the same composition as the semiconductor ceramics is formed on the ZrO 2 plate via the ZrO 2 —SrTiO 3 intermediate layer. The setter is based on ZrO 2 which is a heat resistant material,
In addition, between the SrTiO 3 layer and the ZrO 2 plate, ZrO 2
Since -SrTiO 3 intermediate layer is present, durable overall setter, and nor adversely affect reacts with the ceramic to be fired.

【0013】その結果、本発明のセッターにおいては、
半導体セラミックスと同一組成のSrTiO3層をセラミック
被焼成体との接触面に形成させているので、セッターか
らの汚染がなくセラミック被焼成体やセラミック粉(敷
粉)の付着ならびに反応を引き起こすことなく半導体セ
ラミックスを焼成することができる。しかも、SrTiO3
既焼結体をセッターとセラミック被焼成体の間に介在さ
せて用いる従来技術の場合に比べて、本発明のセッター
は、直にセラミック被焼成体と接触させて使用できるの
で、大幅に作業性を改善することができる。
As a result, in the setter of the present invention,
Since the SrTiO 3 layer having the same composition as the semiconductor ceramics is formed on the contact surface with the ceramic fired body, there is no contamination from the setter, and the ceramic fired body or ceramic powder (laying powder) does not adhere or react. The semiconductor ceramics can be fired. Moreover, since the setter of the present invention can be used in direct contact with the ceramic body to be burned, as compared to the case of the conventional technique in which a sintered body of SrTiO 3 is interposed between the setter and the body to be fired. , The workability can be greatly improved.

【0014】本発明において、ZrO2−SrTiO3中間層およ
びSrTiO3層は、セラミック被焼成体と同一組成のSrTiO3
系セラミックスを、ZrO2基板上に塗布,焼成することに
より得られるが、上述したような作用を有するZrO2−Sr
TiO3中間層を効果的に形成させるためには、この基板上
のSrTiO3系セラミックスは、強還元性で焼成され、かつ
ZrO2板とある程度反応し易いものを用いることが望まし
い。
[0014] In the present invention, ZrO 2 -SrTiO 3 intermediate layer and SrTiO 3 layer, SrTiO 3 ceramic target heating subject the same composition
The system ceramics, coated ZrO 2 substrate is obtained by firing, ZrO 2 -Sr having an action as described above
In order to effectively form the TiO 3 intermediate layer, the SrTiO 3 -based ceramics on this substrate are strongly reductively fired, and
It is desirable to use a material that easily reacts with the ZrO 2 plate to some extent.

【0015】なお、本発明の焼成用セッターは、まず、
半導体セラミックスと同一組成の混合粉や仮焼粉,焼成
粉(とも粉)などを、ポリビニルアルコールなどの有機
バインダー水溶液と良く混ぜスラリー状として、ZrO2
上に薄く塗布し、次いで、脱バインダー,還元雰囲気で
の焼成を行い、ZrO2板上にセラミック層を焼き付けて製
造される。
The sintering setter of the present invention is as follows.
A mixed powder, a calcined powder, or a calcined powder (sintered powder) having the same composition as the semiconductor ceramics is well mixed with an organic binder aqueous solution such as polyvinyl alcohol to form a slurry, which is thinly applied on the ZrO 2 plate, and then debinding, It is manufactured by firing in a reducing atmosphere and baking a ceramic layer on a ZrO 2 plate.

【0016】また、本発明の焼成用セッターでは、ZrO2
−SrTiO3中間層およびSrTiO3層を、ZrO2板の一方の面の
みに形成させてもよく、また両面に形成させてもよい。
例えば、ZrO2基板上にセラミック成形体を縦に積み重ね
て行う焼成において、前者の場合は縦に積み重ねた被焼
成体の底面部材に好適に使用され、また後者の場合は縦
に積み重ねた被焼成体同士の間に介在させて好適に使用
される。
In the firing setter of the present invention, ZrO 2
The -SrTiO 3 interlayer and SrTiO 3 layer, may also be formed only on one surface of the ZrO 2 plate, or may also be formed on both surfaces.
For example, in firing performed by vertically stacking ceramic molded bodies on a ZrO 2 substrate, the former case is preferably used as a bottom member of vertically fired bodies, and the latter case is vertically stacked fired bodies. It is preferably used by interposing between the bodies.

【0017】[0017]

【実施例】【Example】

(実施例1)まず、組成比がSrCO3:50mol%,TiO2:49〜51
mol%,Nb2O5:0.1〜0.2mol% およびMnCO3:0.05〜0.1mol%
となるようにSrCO3,TiO2,Nb2O5およびMnCO3 を秤量し、
ボールミルで20時間混合して原料混合粉とした。次い
で、この混合粉の適量を有機バインダー水溶液(5%ポ
リビニルアルコール水溶液)と良く混ぜスラリー状と
し、市販のZrO2板に薄く塗布した。そして、1150〜1200
℃で2〜4時間焼成し、焼成用基板を得た。なお、この
熱処理は混合粉が反応するのと同時に基板との密着性を
良好にする効果がある。
(Example 1) First, composition ratio SrCO 3: 50mol%, TiO 2 : 49~51
mol%, Nb 2 O 5: 0.1~0.2mol% and MnCO 3: 0.05~0.1mol%
SrCO 3 , TiO 2 , Nb 2 O 5 and MnCO 3 are weighed so that
A ball mill was used to mix for 20 hours to obtain a raw material mixed powder. Then, an appropriate amount of this mixed powder was thoroughly mixed with an organic binder aqueous solution (5% polyvinyl alcohol aqueous solution) to form a slurry, which was thinly applied to a commercially available ZrO 2 plate. And 1150-1200
It baked at 2 degreeC for 2-4 hours, and obtained the board | substrate for baking. Note that this heat treatment has the effect of improving the adhesion to the substrate at the same time as the mixed powder reacts.

【0018】次に、この焼成基板上に、仮焼、成形、脱
脂を行った上記混合粉と同組成の粉からなる成形体を成
形体同士が融着しないようにとも粉(同一組成焼成粉)
をまぶし、数枚重ねた。その後、N2/H2還元雰囲気中14
50〜1520℃で、2〜4時間の一次焼成を行った。次に、
得られたセラミック焼結体にBi2O3 系拡散剤を塗布し、
大気中、1150〜1250℃で、1時間の2次焼成を行った。
次いで、Agペーストの焼き付けにより電極を形成し、粒
界型半導体コンデンサを得た。
Next, on this fired substrate, a molded body made of powder having the same composition as the above-mentioned mixed powder that has been calcined, molded, and degreased is powdered so that the molded bodies do not adhere to each other. )
I sprinkled them on top of each other and layered several. Then, in a N 2 / H 2 reducing atmosphere,
Primary baking was performed at 50 to 1520 ° C. for 2 to 4 hours. next,
Bi 2 O 3 based diffusing agent was applied to the obtained ceramic sintered body,
Secondary firing was carried out at 1150 to 1250 ° C. for 1 hour in the atmosphere.
Next, an electrode was formed by baking an Ag paste to obtain a grain boundary type semiconductor capacitor.

【0019】表1に、本発明の焼成用セッターと接触し
ていた成形体を焼成して得た半導体コンデンサの電気特
性(容量,誘電正接 tanδ,絶縁抵抗IR)を測定した結
果を示す。比較例としては、本発明の焼成用セッターを
用いなかった場合、すなわち、コーティングなしのZrO2
板と接触していた成形体を焼成して得た半導体コンデン
サの電気特性を示す。なお、成形体のサイズは 8.0mmφ
×0.4mmtであり、容量および誘電正接 tanδは1kHz で
測定し、絶縁抵抗IRは25V,20秒の値である。また、表1
に示すデータは20個の平均値である。
Table 1 shows the results of measuring the electrical characteristics (capacitance, dielectric loss tangent tan δ, insulation resistance IR) of the semiconductor capacitor obtained by firing the molded body that was in contact with the firing setter of the present invention. As a comparative example, without using the firing setter of the present invention, that is, ZrO 2 without coating
The electrical characteristics of the semiconductor capacitor obtained by firing the molded body that was in contact with the plate are shown. The size of the molded body is 8.0 mmφ
The capacitance and dielectric loss tangent tanδ are measured at 1kHz, and the insulation resistance IR is 25V for 20 seconds. Also, Table 1
The data shown in is the average value of 20 data.

【0020】表1に示す結果から明らかなように、本発
明の焼成用セッターを用いた場合は、ZnO2基板上にセラ
ミック成形体を直に載せて焼成した比較例に比べて、得
られた製品の物性(電気特性)に及ぼす影響が著しく少
ないことが判った。すなわち、本発明の焼成用セッター
は、焼成すべきセラミック成形体に対して、付着や反応
を引き起こさないことが判った。
As is clear from the results shown in Table 1, when the firing setter of the present invention was used, it was obtained as compared with the comparative example in which the ceramic molded body was directly placed on the ZnO 2 substrate and fired. It was found that the effect on the physical properties (electrical properties) of the product was extremely small. That is, it was found that the firing setter of the present invention did not cause adhesion or reaction with the ceramic compact to be fired.

【0021】[0021]

【表1】 [Table 1]

【0022】(実施例2)まず、組成比がSrCO3:50mol
%,TiO2:49〜51mol%,Nb2O5:0.1〜0.2mol% およびMnCO3:
0.05〜0.1mol% となるようにSrCO3,TiO2,Nb2O5およびMn
CO3 を秤量し、ボールミルで20時間混合して原料混合粉
とした。次いで、この混合粉および同一組成の焼成粉
(とも粉)適量を有機バインダー水溶液(5%ポリビニ
ルアルコール水溶液)と良く混ぜスラリー状とし、市販
のZrO2板に薄く塗布した。そして、1150〜1200℃で2〜
4時間焼成し、焼成用セッターを得た。なお、この熱処
理は混合粉が反応するのと同時に基板との密着性を良好
にする効果がある。
(Example 2) First, the composition ratio was SrCO 3 : 50 mol.
%, TiO 2 : 49 to 51 mol%, Nb 2 O 5 : 0.1 to 0.2 mol% and MnCO 3 :
SrCO 3 , TiO 2 , Nb 2 O 5 and Mn so as to be 0.05 to 0.1 mol%
CO 3 was weighed and mixed with a ball mill for 20 hours to obtain a raw material mixed powder. Next, this mixed powder and an appropriate amount of the fired powder (both powders) of the same composition were well mixed with an organic binder aqueous solution (5% polyvinyl alcohol aqueous solution) to form a slurry, which was thinly applied to a commercially available ZrO 2 plate. And 2 at 1150-1200 ℃
It baked for 4 hours and obtained the setter for baking. Note that this heat treatment has the effect of improving the adhesion to the substrate at the same time as the mixed powder reacts.

【0023】次に、この焼成用セッター上に、仮焼、成
形、脱脂を行った上記混合粉と同組成の粉からなる成形
体を成形体同士が融着しないようにとも粉(同一組成焼
成粉)をまぶし、数枚重ねた。その後、N2/H2還元雰囲
気中1450〜1520℃で、2〜4時間の一次焼成を行った。
次に、得られたセラミック焼結体にBi2O3 系拡散剤を塗
布し、大気中、1150〜1250℃で、1時間の2次焼成を行
った。次いで、Agペーストの焼き付けにより電極を形成
し、粒界型半導体コンデンサを得た。
Next, on the setter for firing, a molded body made of powder having the same composition as the mixed powder calcined, molded, and degreased is powdered (fired with the same composition so that the molded bodies are not fused to each other). (Powder) and layered several. Then, primary baking was performed at 1450 to 1520 ° C. in a N 2 / H 2 reducing atmosphere for 2 to 4 hours.
Next, a Bi 2 O 3 -based diffusing agent was applied to the obtained ceramic sintered body, and secondary firing was performed at 1150 to 1250 ° C. for 1 hour in the air. Next, an electrode was formed by baking Ag paste to obtain a grain boundary type semiconductor capacitor.

【0024】表2に、本発明の焼成用セッターと接触し
ていた成形体を焼成して得た半導体コンデンサの電気特
性(容量,誘電正接 tanδ,絶縁抵抗IR)を測定した結
果を示す。比較例としては、本発明の焼成用セッターを
用いなかった場合、すなわち、コーティングなしのZrO2
板と接触していた成形体を焼成して得た半導体コンデン
サの電気特性を示す。なお、成形体のサイズは 8.0mmφ
×0.4mmtであり、容量および誘電正接 tanδは1kHz で
測定し、絶縁抵抗IRは25V,20秒の値である。また、表2
に示すデータは20個の平均値である。
Table 2 shows the results of measuring the electrical characteristics (capacitance, dielectric loss tangent tan δ, insulation resistance IR) of the semiconductor capacitors obtained by firing the molded body that was in contact with the firing setter of the present invention. As a comparative example, without using the firing setter of the present invention, that is, ZrO 2 without coating
The electrical characteristics of the semiconductor capacitor obtained by firing the molded body that was in contact with the plate are shown. The size of the molded body is 8.0 mmφ
The capacitance and dielectric loss tangent tanδ are measured at 1kHz, and the insulation resistance IR is 25V for 20 seconds. Also, Table 2
The data shown in is the average value of 20 data.

【0025】表2に示す結果から明らかなように、本発
明の焼成用セッターを用いた場合は、ZnO2基板上にセラ
ミック成形体を直に載せて焼成した比較例に比べて、得
られた製品の物性(電気特性)に及ぼす影響が著しく少
ないことが判った。すなわち、本発明の焼成用セッター
は、焼成すべきセラミック成形体に対して、付着や反応
を引き起こさないことが判った。
As is clear from the results shown in Table 2, when the firing setter of the present invention was used, it was obtained as compared with the comparative example in which the ceramic molded body was directly placed on the ZnO 2 substrate and fired. It was found that the effect on the physical properties (electrical properties) of the product was extremely small. That is, it was found that the firing setter of the present invention did not cause adhesion or reaction with the ceramic compact to be fired.

【0026】[0026]

【表2】 [Table 2]

【0027】[0027]

【発明の効果】以上説明したように、本発明の半導体セ
ラミックス焼成用セッターは、ZrO2板上に、ZrO2−SrTi
O3中間層を介して半導体セラミックスと同一組成のSrTi
O3層を形成させているので、焼成すべきセラミック成形
体に対して、付着や反応を引き起こすことなく、半導体
セラミックスを容易に焼成することができる。しかも、
直にセラミック被焼成体と接触させて使用できるので、
大幅に作業性を改善することができる。
As described above, according to the present invention, a semiconductor ceramic firing setter according to the present invention, on the ZrO 2 plate, ZrO 2 -SrTi
SrTi with the same composition as the semiconductor ceramics through the O 3 intermediate layer
Since the O 3 layer is formed, the semiconductor ceramics can be easily fired without causing adhesion or reaction to the ceramic molded body to be fired. Moreover,
Since it can be used by directly contacting with the ceramic fired object,
Workability can be greatly improved.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐藤 恵二 茨城県つくば市東光台5−9−6 日本重 化学工業株式会社筑波研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Keiji Sato 5-9-6 Tokodai, Tsukuba-shi, Ibaraki Nippon Heavy Industries, Ltd. Tsukuba Research Institute

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ZrO2板の少なくとも一方の表面に、半導
体セラミックスと同一組成であるSrTiO3系セラミックス
を塗布,焼成することにより、前記ZrO2板の表面にZrO2
−SrTiO3中間層を介してSrTiO3層を形成させてなる半導
体セラミックス焼成用セッター。
To claim 1 wherein at least one surface of the ZrO 2 plate, applying a SrTiO 3 based ceramic is the same composition as the semiconductor ceramic, by baking, ZrO 2 on the surface of the ZrO 2 plate
A semiconductor ceramic firing setter having an SrTiO 3 layer formed via an SrTiO 3 intermediate layer.
JP4153888A 1992-06-12 1992-06-12 Setter for burning semiconductor ceramic Pending JPH05345675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4153888A JPH05345675A (en) 1992-06-12 1992-06-12 Setter for burning semiconductor ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4153888A JPH05345675A (en) 1992-06-12 1992-06-12 Setter for burning semiconductor ceramic

Publications (1)

Publication Number Publication Date
JPH05345675A true JPH05345675A (en) 1993-12-27

Family

ID=15572313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4153888A Pending JPH05345675A (en) 1992-06-12 1992-06-12 Setter for burning semiconductor ceramic

Country Status (1)

Country Link
JP (1) JPH05345675A (en)

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