JPH05343567A - Resin sealed semiconductor device - Google Patents

Abstract

PURPOSE:To provide a resin-sealed semiconductor device in which the low cost and a thin type construction are realized and which serves to obtain high performance, high reliability, and low cost electronic instruments with high density electronic parts mounted. CONSTITUTION:A resin-sealed semiconductor device has a heat radiation structure in which a semiconductor device 2 is connected with a wiring board 1 and which is resin-sealed through transfer molding. For the wiring board 1 high heat radiation aluminum nitride is employed, and the wiring board 1 is exposed from sealed resin 10. Accordingly, the wiring board 1 serves also as a heat radiation plate, eliminating the need of such a heat radiation plate. Thus, a low cost and thin construction is achieved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a resin-sealed semiconductor device having a heat dissipation structure.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view of a conventional resin-sealed semiconductor device having a heat dissipation structure. A semiconductor element 42 is bonded and mounted on the die pad 41 with an adhesive 43 such as Ag paste, and an electrode 44 of the semiconductor element 42 and an external connection lead 48 are connected by an Au wire 49. The heat dissipation plate 411 is in contact with the die pad 41 and is partially exposed from the resin sealing 410 for ensuring reliability such as mechanical strength and moisture resistance in order to improve heat dissipation characteristics. The prior art shown in FIG. 4 is a method mainly used for a single chip package in which an Au wire electrically connects between an electrode of a semiconductor element and an external lead.

On the other hand, a structure as shown in FIG. 5 is used as a resin-sealed semiconductor device having a heat dissipation structure in the form of a module in which a plurality of electronic components are mounted on a substrate. The figure is a cross-sectional view, in which a semiconductor element 52 and various electronic components 512 such as resistors and capacitors are mounted on an alumina substrate 51 to form an electronic component module, and the external connection terminals 57 and the outside of the electronic component module are formed. Connection lead 58 is A
It is connected by the u wire 59. The heat dissipation plate 511 is in contact with the alumina substrate 51 and is partially exposed from the sealing resin 510 for ensuring reliability such as mechanical strength and moisture resistance in order to improve heat dissipation characteristics.

[0004]

As described above, in the resin-sealed semiconductor device, the die pad or the substrate is covered with the heat sink, and these are resin-sealed. Therefore,
The structure of the semiconductor device becomes complicated, the material cost increases, the manufacturing process becomes complicated, and the thickness of the resin-encapsulated semiconductor device itself is necessarily more than the total thickness of the heat sink, the substrate, and the electronic component itself. become. However, this is disadvantageous in achieving cost reduction, thinning, and size reduction required for electronic devices.

Therefore, an object of the present invention is to provide a resin-sealed semiconductor device having a low-priced and thin heat dissipation structure which contributes to the cost reduction and size reduction of electronic equipment.

[0006]

In order to achieve the above object, a resin-sealed semiconductor device of the present invention is a resin-sealed semiconductor device in which a semiconductor element is connected to a wiring substrate and is resin-sealed together with the semiconductor device by transfer molding. In the type semiconductor device structure, the wiring board is made of aluminum nitride having high thermal conductivity, and the wiring board is exposed from a sealing resin.

[0007]

When the resin-sealed semiconductor device of the present invention is used, in the resin-sealed semiconductor device structure in which the semiconductor element is connected to the wiring board and resin-molded by transfer molding, the wiring board is made of aluminum nitride, Since a part of this wiring board is exposed from the sealing resin, that is, aluminum nitride having high heat dissipation is used for the wiring board, and this also serves as a heat dissipation plate, so that the heat dissipation plate is not required and the cost can be reduced. In addition, the thickness of the resin-encapsulated semiconductor device itself does not include the thickness of the heat sink. Therefore,
It is possible to reduce the cost and the thickness of the resin-sealed semiconductor device having the heat dissipation structure.

[0008]

The present invention will be described in detail below with reference to the embodiments shown in the drawings.

FIG. 1 is a sectional view of a resin-sealed semiconductor device according to the first embodiment of the present invention. The semiconductor element 2 is attached and mounted on the wiring board 1 made of aluminum nitride with an adhesive 3 such as Ag paste.
Of the electrode 4 and the electrode 5 of the aluminum nitride wiring substrate 1 are Au.
The wires 6 are connected, and the external connection terminals 7 and external connection leads 8 of the aluminum nitride wiring board 1 are
Transfer molding is performed in such a manner that a part of the back surface of the wiring board 1 is exposed by the sealing resin 10 for connecting the u-wire 9 to establish electrical continuity and ensuring reliability such as mechanical strength and moisture resistance. It is sealed by.

Here, the thermal conductivity of AIN is 230 W / m.
・ K and Al used in the conventional heat sink (heat conductivity is 20
5 W / m · k), and by using aluminum nitride as the substrate material, a sufficient heat dissipation effect can be obtained without a heat dissipation plate. FIG. 2 is a sectional view of a resin-sealed semiconductor device according to the second embodiment. The same members as those in FIG. 1 in FIG. 2 are designated by the same reference numerals and the description thereof is omitted.
The difference between the first embodiment and the second embodiment of the present invention is that the first embodiment uses Au wires to establish electrical continuity between the external connection terminals of the wiring board and the external connection leads. On the other hand, in the second embodiment, the external connection leads 8 are directly connected to the wiring board by soldering 29. Still another is that the semiconductor element 2 is connected to a wiring board by a flip chip method to form a COB module. The electrical connection of the external connection leads by soldering is performed by externally connecting the external connection terminals 8 of the wiring board to which the external connection leads 8 are preliminarily solder-coated in the state of the lead frame.
It is possible to connect all at once by solder reflow, and there is no wire breakage or short circuit between adjacent wires due to resin flow during resin molding. Also, since the electrodes of the semiconductor element and the electrodes of the wiring board are electrically connected by the COB mounting, there is no fear of trouble due to the Au wire.

As described above, by adopting these methods which do not use Au wires, the resin-encapsulated semiconductor device can have a high density and a narrow pitch.

FIG. 3 is a sectional view of a resin-sealed semiconductor device according to the third embodiment. The same members as those in FIG. 1 in FIG. 3 are designated by the same reference numerals and the description thereof will be omitted. The first of the present invention,
The third embodiment is different from the second embodiment in that the third embodiment has a semiconductor element 2 and various electronic components 12 such as a resistance capacitor on the substrate.
In order to obtain the effect of the present invention, the wiring board having a multi-chip structure mounted with is sealed by transfer molding so that a part of the back surface of the wiring board is exposed.

The embodiment of the present invention is not limited to the above, but can be applied in any form as long as it has the features related to the present invention.

[0014]

As is apparent from the above, in the resin-sealed semiconductor device having the heat dissipation structure of the present invention, the substrate is made of aluminum nitride having a high heat dissipation property, and the back surface is exposed from the encapsulation resin so that the heat dissipation can be improved. The structure that doubles as a plate allows efficient heat dissipation, and the structure is simple, and the cost and thickness can be reduced. Therefore, it is possible to contribute to higher performance, higher reliability, and lower cost of electronic devices in which electronic components are mounted at high density.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view of a resin-sealed semiconductor device according to another embodiment of the present invention.

FIG. 3 is a sectional view of a resin-encapsulated semiconductor device according to still another embodiment of the present invention.

FIG. 4 is a sectional view of a conventional resin-sealed semiconductor device.

FIG. 5 is a cross-sectional view of a conventional resin-sealed semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Aluminum nitride wiring board 41 Die pad 51 Alumina substrate 2, 42, 52 Semiconductor element 3, 43 Adhesive such as Ag paste 4, 44 Semiconductor element electrode 5 Wiring board electrode 6 Au wire 7, 57 External connection terminal 8, 48, 58 External connection lead 9, 49, 59 Au wire 10, 410, 510 Sealing resin 29 Solder 411, 511 Heat sink 12, 512 Various electronic parts

Claims (1)

[Claims] 1. In a resin-sealed semiconductor device structure in which a semiconductor element is connected to a wiring board and resin-sealed by transfer molding, the wiring board is made of aluminum nitride, and the wiring board is made of a sealing resin. A resin-encapsulated semiconductor device, which is exposed.