JPH0534319B2 - - Google Patents
Info
- Publication number
- JPH0534319B2 JPH0534319B2 JP62296006A JP29600687A JPH0534319B2 JP H0534319 B2 JPH0534319 B2 JP H0534319B2 JP 62296006 A JP62296006 A JP 62296006A JP 29600687 A JP29600687 A JP 29600687A JP H0534319 B2 JPH0534319 B2 JP H0534319B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- film
- substrate
- nucleation
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010432 diamond Substances 0.000 claims description 32
- 229910003460 diamond Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000013081 microcrystal Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はダイヤモンド膜の製造方法に関し、特
にダイヤモンド結晶の高速緻密化によつてダイヤ
モンドを高速に製膜する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a diamond film, and more particularly to a method for rapidly forming a diamond film by rapidly densifying diamond crystals.
［従来の技術とその問題点］
ダイヤモンド結晶の核発生速度は、通常のシリ
コン、モリブデン等の基板上では、非常に遅いた
め、通常は基板をダイヤモンド粒子で荒らすこと
によつて、核発生密度を高め、膜状ダイヤモンド
を得ている。従つて、配線あるいは半導体回路が
組み込まれた基板は、使用できないという欠点を
有していた。[Conventional technology and its problems] The nucleation rate of diamond crystals is extremely slow on a substrate made of ordinary silicon, molybdenum, etc., so the nucleation density is usually reduced by roughening the substrate with diamond particles. Higher and membranous diamonds are obtained. Therefore, a board on which wiring or semiconductor circuits are incorporated has the disadvantage that it cannot be used.
また、基板表面をプラズマないしイオンで衝撃
を与えることによつてダイヤモンドの核発生密度
を高めるという方法もあるが、この方法では、基
板のプラズマ損傷等の問題がある。 Another method is to increase the diamond nucleation density by bombarding the substrate surface with plasma or ions, but this method has problems such as plasma damage to the substrate.
本発明の目的は、このような従来の欠点を除去
せしめ、ダイヤモンド結晶を高速で緻密化するこ
とができるダイヤモンド膜の製造方法を提供する
ことにある。 An object of the present invention is to provide a method for manufacturing a diamond film that can eliminate these conventional drawbacks and densify diamond crystals at high speed.
［問題点を解決するための手段］
本発明は、平均粒径が0.1μm以下のダイヤモン
ド微結晶を含有するカーボン膜を基板上に予備製
膜した後、ダイヤモンドの製膜を行うことを特徴
とするダイヤモンド膜の製造方法である。[Means for solving the problem] The present invention is characterized in that a carbon film containing diamond microcrystals with an average particle size of 0.1 μm or less is preliminarily formed on a substrate, and then a diamond film is formed. This is a method for manufacturing a diamond film.
ダイヤモンド微結晶の大きさは、緻密化を考慮
すると小さい程良く、実用上は0.1μm以下である
ことが好ましい。 The smaller the size of the diamond microcrystal, the better in consideration of densification, and in practice it is preferably 0.1 μm or less.
［作用］
欠陥のない基板上では、ダイヤモンド結晶の核
発生位置が少ないので、核発生密度も小さくな
る。そこで本発明では、基板の核発生位置に関係
なく析出できるカーボン膜を析出させ、核発生位
置をこのカーボン膜とすることによつて、ダイヤ
モンド微結晶をカーボン膜析出と同時に大量に核
発生させた後に、良質のダイヤモンド結晶を製膜
する。[Operation] On a defect-free substrate, the number of diamond crystal nucleation positions is small, so the nucleation density is also low. Therefore, in the present invention, by depositing a carbon film that can be deposited regardless of the nucleation position on the substrate and by setting the nucleation position to this carbon film, a large amount of diamond microcrystals can be nucleated at the same time as the carbon film is deposited. Afterwards, a film of high quality diamond crystal is formed.
上記方法により、ダイヤモンドを高速に製膜で
きる。 By the above method, diamond can be formed into a film at high speed.
［実施例］
次に本発明の一実施例について説明するが、本
発明の方法はこれに限定されるものではない。[Example] Next, an example of the present invention will be described, but the method of the present invention is not limited thereto.
約2000℃以上に加熱したフイラメントにメタン
および水素の混合ガスを衝突させ、フイラメント
直下の加熱された無欠陥のシリコン基板上にダイ
ヤモンドを析出させた。メタンの体積率が高いほ
どダイヤモンドの結晶性が悪化することが知られ
ているので、予備製膜条件としてメタン濃度を
0.5％から５％と変化させて10分間成長させ、そ
の後メタン濃度を0.5％として、良質なダイヤモ
ンド結晶を成長させた。 A mixed gas of methane and hydrogen was bombarded with a filament heated to over 2000 degrees Celsius, and diamond was deposited on the heated defect-free silicon substrate directly below the filament. It is known that the higher the volume fraction of methane, the worse the crystallinity of diamond.
The methane concentration was varied from 0.5% to 5% and grown for 10 minutes, and then the methane concentration was increased to 0.5% to grow high-quality diamond crystals.
その結果、予備製膜をしない場合にはほとんど
ダイヤモンドの核発生は観察されなかつた。一
方、予備製膜を行つた場合、メタン濃度が１％未
満では予備製膜を行わない時と同じ程度の核発生
数であつたが、１％以上では１時間以内にダイヤ
モンド結晶が緻密化し、膜状ダイヤモンドとなつ
た。 As a result, almost no diamond nucleation was observed when no preliminary film formation was performed. On the other hand, when preliminary film formation was performed, when the methane concentration was less than 1%, the number of nuclei generated was about the same as when no preliminary film formation was performed, but when the methane concentration was over 1%, the diamond crystals became dense within 1 hour. It became a membrane diamond.
また、メタン濃度を１％以上とした予備製膜に
おいては、平均粒径0.1μm以下のダイヤモンド微
結晶を含有するカーボン膜が形成されていること
が確認された。 In addition, in preliminary film formation at a methane concentration of 1% or more, it was confirmed that a carbon film containing diamond microcrystals with an average particle size of 0.1 μm or less was formed.
［発明の効果］
以上説明したように、本発明によれば基板の表
面状態に依存せずにダイヤモンド膜を高速に製膜
できるので、配線を施された基板、半導体回路が
組み込まれた基板等の上に直接ダイヤモンド膜を
高速に製膜することが可能である。従つてダイヤ
モンドの高熱伝導性、高電気絶縁性等を従来にな
く種々の基板に生かすことができ、その実用的価
値は極めて大きい。[Effects of the Invention] As explained above, according to the present invention, a diamond film can be formed at high speed without depending on the surface condition of the substrate, so it is possible to form a diamond film at high speed without depending on the surface condition of the substrate. It is possible to form a diamond film directly on the diamond film at high speed. Therefore, diamond's high thermal conductivity, high electrical insulation properties, etc. can be utilized in a variety of substrates like never before, and its practical value is extremely great.
Claims (1)
を含有するカーボン膜を基板上に予備製膜した
後、ダイヤモンドの製膜を行うことを特徴とする
ダイヤモンド膜の製造方法。1. A method for producing a diamond film, which comprises preliminarily forming a carbon film containing diamond microcrystals with an average grain size of 0.1 μm or less on a substrate, and then forming a diamond film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296006A JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296006A JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01138198A JPH01138198A (en) | 1989-05-31 |
| JPH0534319B2 true JPH0534319B2 (en) | 1993-05-21 |
Family
ID=17827912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62296006A Granted JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01138198A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04219396A (en) * | 1988-07-02 | 1992-08-10 | Sumitomo Metal Mining Co Ltd | Formation of diamond film |
| WO1994016125A1 (en) * | 1993-01-14 | 1994-07-21 | Sumitomo Electric Industries, Ltd. | Process for vapor-phase diamond synthesis |
| EP0844319A4 (en) * | 1996-06-12 | 2001-09-05 | Matsushita Electric Ind Co Ltd | Diamond film and process for preparing the same |
| JP4009090B2 (en) * | 2001-11-08 | 2007-11-14 | 株式会社神戸製鋼所 | Method for producing diamond-coated non-diamond carbon member |
| JP6772995B2 (en) * | 2017-09-25 | 2020-10-21 | 株式会社Sumco | Manufacturing method of SOI wafer and SOI wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS61146793A (en) * | 1984-12-21 | 1986-07-04 | Toshiba Corp | Substrate |
| JPS62256795A (en) * | 1986-04-30 | 1987-11-09 | Kyocera Corp | Production of diamond film |
-
1987
- 1987-11-26 JP JP62296006A patent/JPH01138198A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS61146793A (en) * | 1984-12-21 | 1986-07-04 | Toshiba Corp | Substrate |
| JPS62256795A (en) * | 1986-04-30 | 1987-11-09 | Kyocera Corp | Production of diamond film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01138198A (en) | 1989-05-31 |
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