JPH01138198A - Production of diamond film - Google Patents
Production of diamond filmInfo
- Publication number
- JPH01138198A JPH01138198A JP62296006A JP29600687A JPH01138198A JP H01138198 A JPH01138198 A JP H01138198A JP 62296006 A JP62296006 A JP 62296006A JP 29600687 A JP29600687 A JP 29600687A JP H01138198 A JPH01138198 A JP H01138198A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- film
- substrate
- carbon film
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 44
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000013081 microcrystal Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 13
- 230000006911 nucleation Effects 0.000 abstract description 10
- 238000010899 nucleation Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はダイヤモンド膜の製造方法に関し、特にダイヤ
モンド結晶の高速緻密化によってダイヤモンドを高速に
製膜する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a diamond film, and more particularly to a method for rapidly forming a diamond film by rapidly densifying diamond crystals.
［従来の技術とその問題点］
ダイヤモンド結晶の核発生速度は、通常のシリコン、モ
リブデン等の基板上では、非常に遅いため、通常は基板
をダイヤモンド粒子で荒らすことによって、核発生密度
を高め、膜状ダイヤモンドを得ている。従って、配線あ
るいは半導体回路か組み込まれた基板は、使用てきない
という欠点を有していた。[Conventional technology and its problems] The rate of nucleation of diamond crystals is very slow on a normal substrate such as silicon or molybdenum, so the nucleation density is usually increased by roughening the substrate with diamond particles. Membrane diamonds are obtained. Therefore, a board with built-in wiring or a semiconductor circuit has the disadvantage that it cannot be used.
また、基板表面をプラズマないしイオンで衝撃を与える
ことによってダイヤモンドの核発生密度を高めるという
方法もあるが、この方法では、基板のプラズマ損傷等の
問題がおる。Another method is to increase the diamond nucleation density by bombarding the substrate surface with plasma or ions, but this method has problems such as plasma damage to the substrate.
本発明の目的は、このような従来の欠点を除去せしめ、
ダイヤモンド結晶を高速で緻密化することができるダイ
ヤモンド膜の製造方法を提供することにある。The purpose of the present invention is to eliminate such conventional drawbacks,
An object of the present invention is to provide a method for manufacturing a diamond film that can densify diamond crystals at high speed.
［問題点を解決するための手段］
本発明は、ダイヤモンド微結晶を含有するカーホン膜を
基板上に予備製膜した後、ダイヤモンドの製膜を行うこ
とを特徴とするダイヤモンド膜の製造方法である。[Means for Solving the Problems] The present invention is a method for producing a diamond film, characterized in that a diamond film is formed after a carphone film containing diamond microcrystals is preliminarily formed on a substrate. .
ダイヤモンド微結晶の大きさは、緻密化を考慮すると小
さい程良く、実用上はｏ、 １珈以下であることか好ま
しい。The smaller the size of the diamond microcrystal, the better in consideration of densification, and in practice it is preferably less than 0.1 C.
［作用］
欠陥のない基板上では、ダイヤモンド結晶の核発生位置
が少ないので、核発生密度も小さくなる。[Operation] On a defect-free substrate, the number of diamond crystal nucleation positions is small, so the nucleation density is also low.
そこで本発明では、基板の核発生位置に関係なく析出で
きるカーボン膜を析出させ、核発生位置をこのカーボン
膜とすることによって、ダイヤモンド微結晶をカーボン
膜析出と同時に大量に核発生させた後に、良質のダイヤ
モンド結晶を製膜する。Therefore, in the present invention, by depositing a carbon film that can be deposited regardless of the nucleation position on the substrate, and by setting the nucleation position at this carbon film, a large amount of diamond microcrystals are nucleated at the same time as the carbon film is deposited, and then, Forms a film of high quality diamond crystal.
上記方法により、ダイヤモンドを高速に製膜できる。By the above method, diamond can be formed into a film at high speed.
［実施例］
次に本発明の一実施例について説明するが、本発明の方
法はこれに限定されるものではない。[Example] Next, an example of the present invention will be described, but the method of the present invention is not limited thereto.
約２０００℃以上に加熱したフィラメントにメタンおよ
び水素の混合ガスを衝突させ、フィラメント直下の加熱
された無欠陥のシリコン基板上にダイヤモンドを析出さ
せた。メタンの体積率が高いほどダイヤモンドの結晶性
が悪化することが知られているので、予備製膜条件とし
てメタン濃度を０．５％から５％と変化させて１０分間
成長させ、その後メタン濃度を０．５％として、良質な
ダイヤモンド結晶を成長させた。A mixed gas of methane and hydrogen was bombarded with a filament heated to about 2000° C. or higher, and diamond was deposited on the heated defect-free silicon substrate directly below the filament. It is known that the higher the volume fraction of methane, the worse the crystallinity of diamond, so as a preliminary film formation condition, the methane concentration was varied from 0.5% to 5% and grown for 10 minutes, and then the methane concentration was increased. At 0.5%, high quality diamond crystals were grown.
その結果、予備製膜をしない場合にはほとんどダイヤモ
ンドの核発生は観察されなかった。一方、予備製膜を行
った場合、メタン′ａ度が１％未満では予備製膜を行わ
ない時と同じ程度の核発生数であったが、１％以上では
１時間以内にダイヤモンド結晶が緻密化し、膜状ダイヤ
モンドとなった。As a result, almost no diamond nucleation was observed when no preliminary film formation was performed. On the other hand, when preliminary film formation was performed, when the methane'a degree was less than 1%, the number of nuclei generated was about the same as when no preliminary film formation was performed, but when the methane'a content was over 1%, diamond crystals became dense within 1 hour. It became a film-like diamond.
また、メタン濃度を１％以上とした予備製膜においては
、平均粒径０．１１ＪＩｎ以下のダイヤモンド微結晶を
含有するカーボン膜が形成されていることが確認された
。In addition, in preliminary film formation with a methane concentration of 1% or more, it was confirmed that a carbon film containing diamond microcrystals with an average grain size of 0.11 JIn or less was formed.
［発明の効果］
以上説明したように、本発明によれば基板の表面状態に
依存せずにダイヤモンド膜を高速に製膜できるので、配
線を施された基板、半導体回路が組み込まれた基板等の
上に直接ダイヤモンド膜を高速に製膜することが可能で
ある。従ってダイヤモンドの高熱伝導性、高電気絶縁性
等を従来になく種々の基板に生かすことができ、その実
用的価値は極めて大きい。[Effects of the Invention] As explained above, according to the present invention, a diamond film can be formed at high speed without depending on the surface condition of the substrate, so it is possible to form a diamond film at high speed without depending on the surface condition of the substrate. It is possible to form a diamond film directly on the diamond film at high speed. Therefore, the high thermal conductivity, high electrical insulation, etc. of diamond can be utilized in a variety of substrates unlike before, and its practical value is extremely large.
Claims (2)
上に予備製膜した後、ダイヤモンドの製膜を行うことを
特徴とするダイヤモンド膜の製造方法。(1) A method for producing a diamond film, which comprises preliminarily forming a carbon film containing diamond microcrystals on a substrate, and then forming a diamond film.
である特許請求の範囲第１項記載のダイヤモンド膜の製
造方法。(2) The method for producing a diamond film according to claim 1, wherein the average grain size of the diamond microcrystals is 0.1 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296006A JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62296006A JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01138198A true JPH01138198A (en) | 1989-05-31 |
| JPH0534319B2 JPH0534319B2 (en) | 1993-05-21 |
Family
ID=17827912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62296006A Granted JPH01138198A (en) | 1987-11-26 | 1987-11-26 | Production of diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01138198A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04219396A (en) * | 1988-07-02 | 1992-08-10 | Sumitomo Metal Mining Co Ltd | Formation of diamond film |
| WO1994016125A1 (en) * | 1993-01-14 | 1994-07-21 | Sumitomo Electric Industries, Ltd. | Process for vapor-phase diamond synthesis |
| US6068883A (en) * | 1996-06-12 | 2000-05-30 | Matushita Electric Industrial Co., Ltd. | Process for forming diamond films by nucleation |
| JP2003147527A (en) * | 2001-11-08 | 2003-05-21 | Kobe Steel Ltd | Diamond-coated nondiamond carbon member, and production method therefor |
| JP2019062020A (en) * | 2017-09-25 | 2019-04-18 | 株式会社Sumco | Method for manufacturing soi wafer and soi wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS61146793A (en) * | 1984-12-21 | 1986-07-04 | Toshiba Corp | Substrate |
| JPS62256795A (en) * | 1986-04-30 | 1987-11-09 | Kyocera Corp | Production of diamond film |
-
1987
- 1987-11-26 JP JP62296006A patent/JPH01138198A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS61146793A (en) * | 1984-12-21 | 1986-07-04 | Toshiba Corp | Substrate |
| JPS62256795A (en) * | 1986-04-30 | 1987-11-09 | Kyocera Corp | Production of diamond film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04219396A (en) * | 1988-07-02 | 1992-08-10 | Sumitomo Metal Mining Co Ltd | Formation of diamond film |
| WO1994016125A1 (en) * | 1993-01-14 | 1994-07-21 | Sumitomo Electric Industries, Ltd. | Process for vapor-phase diamond synthesis |
| US5499601A (en) * | 1993-01-14 | 1996-03-19 | Sumitomo Electric Industries, Ltd. | Method for vapor phase synthesis of diamond |
| US6068883A (en) * | 1996-06-12 | 2000-05-30 | Matushita Electric Industrial Co., Ltd. | Process for forming diamond films by nucleation |
| JP2003147527A (en) * | 2001-11-08 | 2003-05-21 | Kobe Steel Ltd | Diamond-coated nondiamond carbon member, and production method therefor |
| JP2019062020A (en) * | 2017-09-25 | 2019-04-18 | 株式会社Sumco | Method for manufacturing soi wafer and soi wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0534319B2 (en) | 1993-05-21 |
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