JPH05341279A - Quartz glass target - Google Patents

Quartz glass target

Info

Publication number
JPH05341279A
JPH05341279A JP17621692A JP17621692A JPH05341279A JP H05341279 A JPH05341279 A JP H05341279A JP 17621692 A JP17621692 A JP 17621692A JP 17621692 A JP17621692 A JP 17621692A JP H05341279 A JPH05341279 A JP H05341279A
Authority
JP
Japan
Prior art keywords
quartz glass
glass target
target
sputtering
target according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17621692A
Other languages
Japanese (ja)
Inventor
Giichi Kikuchi
義一 菊地
Emiko Abe
恵美子 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SEKIEI GLASS KK
Original Assignee
NIPPON SEKIEI GLASS KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SEKIEI GLASS KK filed Critical NIPPON SEKIEI GLASS KK
Priority to JP17621692A priority Critical patent/JPH05341279A/en
Publication of JPH05341279A publication Critical patent/JPH05341279A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/06Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
    • C03B19/066Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

PURPOSE:To provide the quartz glass target which can be formed thick in parts liable to be consumed by sputtering by using nearly net-shaped quartz glass to prevent the degradation in the yield of the material, has a high density, purity and viscosity, foams less, has a smooth surface, eliminates the need for polishing, has the characteristic of a low concn. of alkaline metal impurities so as to enhance the purity and is adequate for the insulating film of ELs and liquid crystals. CONSTITUTION:This quartz glass target is constituted by forming the slurry of synthetic silica powder having 0.5 to 20mum grain size distribution and forming the parts to be within the erosion area at the time of sputtering with a porous plate casting mold as thick parts 2. The concn. of the alkaline impurities of the target is <=0.5ppm, the total impurity content is <=5ppm, the occupying area of the foam is <=0.5mm<2>/100cm<3> and the surface roughness Rmax right after sintering is <=5mum.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ELディスプレイ、液
晶ディスプレイ、タッチパネルなどに用いられる絶縁膜
をスパッタリング法で形成する際に使用する石英ガラス
スパッタリングターゲット(以下、ターゲットという)
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silica glass sputtering target (hereinafter referred to as a target) used when forming an insulating film used in an EL display, a liquid crystal display, a touch panel, etc. by a sputtering method.
Regarding

【0002】[0002]

【従来の技術】従来より、EL基板あるいは液晶基板に
は透明絶縁膜形成材料として平面形状の石英ガラス製の
ターゲットが使用されてきた。
2. Description of the Related Art Conventionally, a flat target made of quartz glass has been used as a material for forming a transparent insulating film on an EL substrate or a liquid crystal substrate.

【0003】この目的に使用する透明石英ガラスは、従
来、水晶粉を酸水素炎で溶融する天然石英ガラス、ある
いは四塩化珪素を酸水素炎で加水分解する合成石英ガラ
スが知られており、目的の大きさを得るために、前記石
英ガラスのブロックを切断、研削、研磨して作製されて
きた。
The transparent quartz glass used for this purpose is conventionally known as natural quartz glass which melts quartz powder with an oxyhydrogen flame or synthetic quartz glass which hydrolyzes silicon tetrachloride with an oxyhydrogen flame. In order to obtain the size, the quartz glass block has been manufactured by cutting, grinding and polishing.

【0004】[0004]

【発明が解決しょうとする課題】しかし、不導電体の酸
化物ターゲットをスパッタリングするには、通常、高周
波スパッタリング法が使われるが、マグネットによって
プラズマを制御しながらスパッタリングをするため、こ
の場合従来の平板形状の石英ガラスターゲットでは、マ
グネットの形状にエロージョンされてしまい、すなわち
水平磁束の高い箇所が優先的に消耗され、次第にスパッ
タリング速度が低下するのみならず、ターゲットの使用
効率が20〜40%と低くなる問題点があった。
However, a high frequency sputtering method is usually used for sputtering an oxide target of a non-conductive material, but since the sputtering is performed while controlling the plasma by a magnet, in this case, the conventional method is used. In the case of a flat-plate type silica glass target, the shape of the magnet is eroded, that is, a portion having a high horizontal magnetic flux is preferentially consumed, and the sputtering rate is gradually lowered, and the target use efficiency is 20 to 40%. There was a problem that it became low.

【0005】これを避けるため予め消耗されやすい部分
は肉厚にする方法が提案されている。しかし、従来の水
晶粉あるいは四塩化珪素を酸水素で溶融した石英ガラス
のブロックを切断、研削等の機械加工で表面に凹凸を作
る方法では材料の歩留りが低下する他、作業が煩雑にな
るなどの問題を有している。
In order to avoid this, a method has been proposed in which the portion that is likely to be consumed in advance is made thick. However, the conventional method of making irregularities on the surface by machining such as cutting and grinding a block of quartz glass in which quartz powder or silicon tetrachloride is melted with oxyhydrogen lowers the material yield and complicates the work. Have a problem.

【0006】さらに、ターゲットの表面が滑らかでない
と、異常スパッタリングでパーテクルの発生原因となる
ので、機械加工では研磨が必要であるが、作業が煩雑で
歩留りも悪くなる欠陥を有していた。
Further, if the surface of the target is not smooth, particles will be generated due to abnormal sputtering, so polishing is required in the machining, but there is a defect that the work is complicated and the yield is deteriorated.

【0007】また、従来の透明石英ガラスはターゲット
用に用いるときには次のような問題点がある。 (1)密度が小さいと含有するガスや不純物のため、生
成する膜にパーテクルが発生する。 (2)微小といえども泡が存在するため、スパッタリン
グ中ターゲットの破損の原因となる。 (3)天然石英ガラスを使用した場合は不純物が多く、
生成する膜の特性が悪くなる。 (4)合成石英ガラスを使用した場合は、粘性が低いた
めスパッタリング中ターゲット温度上昇で割れやすくな
る。
The conventional transparent quartz glass has the following problems when it is used for a target. (1) When the density is low, particles are generated in the generated film due to the contained gas and impurities. (2) Since bubbles are present even though they are minute, they cause damage to the target during sputtering. (3) When natural quartz glass is used, there are many impurities,
The characteristics of the formed film deteriorate. (4) When synthetic quartz glass is used, it has a low viscosity and is liable to crack due to an increase in the target temperature during sputtering.

【0008】本発明は、材料の歩留りが低下しないニア
ネットシェープ合成石英ガラスを用い、スパッタリング
により消耗されやすい部分を肉厚にすることを可能に
し、かつ、密度、純度および粘性が高く、泡が少なく、
表面が滑らかで研磨作業が不要となり、ターゲット材と
して利用効率の優れた石英ガラスターゲット及びその製
造法を提供することを目的とする。
The present invention uses a near-net-shape synthetic quartz glass in which the yield of materials does not decrease, makes it possible to make the portion that is easily consumed by sputtering thick, has a high density, purity and viscosity, and has no bubbles. Less
An object of the present invention is to provide a quartz glass target which has a smooth surface and does not require polishing work, and has excellent utilization efficiency as a target material, and a method for producing the same.

【0009】[0009]

【課題を解決するための手段】そこで、本発明者らは、
上記課題を解決するために鋭意研究を重ねた結果、粒径
をそろえた純度の高い合成シリカ粉末を溶媒および分散
剤を用いてスラリー化し、多孔質板を用いた鋳込型でス
パッタリング時のエロージョンエリア内を肉厚にした成
形体を得、得られた成形体を乾燥・焼結して石英ガラス
を得、得られた透明石英ガラスを高密度化すれば前記目
的が達成できるとの知見を得て本発明を完成した。
Therefore, the present inventors have
As a result of repeated intensive studies to solve the above problems, a high-purity synthetic silica powder having a uniform particle size was slurried using a solvent and a dispersant, and erosion during sputtering was performed using a porous plate casting mold. A finding that the above object can be achieved by obtaining a molded body with a thickened area, drying and sintering the obtained molded body to obtain quartz glass, and densifying the obtained transparent quartz glass Thus, the present invention was completed.

【0010】本発明の特色は、多孔質板鋳型に、純度の
高い合成シリカ粉末のスラリーを流し込み、乾燥・焼結
することで、スパッタリング時のエロージョンエリア内
が肉厚とされ、かつ滑らかな表面をもつ石英ガラスター
ゲットを得ることにある。
The feature of the present invention is that a slurry of high-purity synthetic silica powder is poured into a porous plate mold, and is dried and sintered, so that the erosion area at the time of sputtering is made thick and a smooth surface is obtained. To obtain a quartz glass target with.

【0011】なお、得られる製品の形状は、スパッタリ
ング時のエロージョンエリアを肉厚とした形状であれば
特に限定されるものではない。
The shape of the obtained product is not particularly limited as long as it has a thick erosion area during sputtering.

【0012】本発明に用いる合成シリカ粉末の粒径分布
は、0.5μm〜20μmが好ましく、特に好ましくは
1μm〜10μmである。粒径が0.5μm未満では、
微泡が発生し成形が困難で、また20μmを超えると、
密度が小さくなり好ましくない。
The particle size distribution of the synthetic silica powder used in the present invention is preferably 0.5 μm to 20 μm, particularly preferably 1 μm to 10 μm. If the particle size is less than 0.5 μm,
If it is difficult to mold due to the generation of fine bubbles, and if it exceeds 20 μm,
The density is low, which is not preferable.

【0013】ELや液晶が高度化するにつれ、材料であ
るターゲットもより純度の高いものが求められ、特に配
線の断線原料となるアルカリ金属は嫌われ、合成シリカ
粉末の純度は、アルカリ金属不純物が0.1ppm以
下、不純物総量が5ppm以下、望ましくは不純物総量
が1ppm以下であることが好ましい。なお、不純物総
量が5ppmを越えるとスパッタリングによって生成す
る絶縁膜の特性が悪くなるので好ましくない。
As ELs and liquid crystals have become more sophisticated, the target which is a material is required to have a higher purity. In particular, the alkali metal which is a raw material for disconnection of wiring is disliked, and the purity of the synthetic silica powder depends on the alkali metal impurities. 0.1 ppm or less, the total amount of impurities is 5 ppm or less, and preferably the total amount of impurities is 1 ppm or less. If the total amount of impurities exceeds 5 ppm, the characteristics of the insulating film formed by sputtering deteriorate, which is not preferable.

【0014】スラリー化は、合成シリカ粉末を、蒸留水
等の溶媒と分散剤(アルコール、ケトン、アミド等の有
機溶媒)を使用して、回転ボールミル等で混合すること
によって得る。このとき、充分な脱泡をおこなうことが
好ましい。
The slurry is obtained by mixing the synthetic silica powder with a solvent such as distilled water and a dispersant (organic solvent such as alcohol, ketone and amide) in a rotary ball mill or the like. At this time, it is preferable to perform sufficient defoaming.

【0015】高密度の石英ガラスを得るには、ガラス内
部に微細といえども泡を存在させないことが必要であ
り、内部に泡径の総計が、0.5mm2/100cm3
上存在すると、パーテクル発生原因となり、高出力でス
パッタリングした際、ターゲットが割れる原因となる。
[0015] To obtain a high density of quartz glass, it is necessary to the absence of bubbles even a minute in the glass, the total bubble diameter therein, the presence 0.5 mm 2/100 cm 3 or more, Patekuru It is a cause of generation and causes the target to crack when sputtering at high output.

【0016】泡径の総計を0.5mm2/100cm3
下とするためには、合成シリカ粉末を形成する際、内部
に泡の原因となる気体あるいは不純物を残さないことが
必須であり、このため多孔質板鋳型を用いることにより
成形時の充分な脱気・脱水を行なう。
[0016] The sum of bubble diameter to the 0.5 mm 2/100 cm 3 or less, when forming the synthetic silica powder, it is essential not to leave gas or impurities that cause bubbles therein, the Therefore, by using a porous plate mold, sufficient deaeration and dehydration during molding are performed.

【0017】鋳型としては、ポリエチレン、ポリプロピ
レン、ポリスチレン、弗素樹脂、フェノール樹脂、エポ
キシ樹脂、シリコーンゴム、ポリウレタンなど各種の合
成樹脂または合成ゴム、石膏などの吸水性材料が一般的
には用いられているが、鋳型からの不純物の混入がな
く、かつ透過性の良いことが必須であり、高純度の樹脂
焼結体、石英焼結体、あるいは石英クロスを内壁面にコ
ーティングした多孔質板鋳型とすることが好ましい。
As the mold, various synthetic resins such as polyethylene, polypropylene, polystyrene, fluororesin, phenol resin, epoxy resin, silicone rubber, polyurethane or synthetic rubber, and water absorbing materials such as gypsum are generally used. However, it is essential that impurities are not mixed in from the mold and that the permeability is good, and a high-purity resin sintered body, a quartz sintered body, or a porous plate mold whose inner wall surface is coated with quartz cloth is used. Preferably.

【0018】多孔質板鋳型は、得られるターゲットのス
パッタリング時のエロージョンエリアが肉厚とされた形
状の成形体が得られる形状とする。このとき、成形体の
形状は、ターゲットの使用効率をより高めるためターゲ
ット重量の80%以上をスパッタリング時のエロージョ
ンエリア内に存在するような成形体にすることが好まし
い。
The porous plate mold has such a shape that a molded body having a thick erosion area at the time of sputtering of the obtained target can be obtained. At this time, it is preferable that the shape of the molded body is such that 80% or more of the weight of the target exists in the erosion area during sputtering in order to further improve the use efficiency of the target.

【0019】また、高純度の石英ガラスを得るために
は、原料の合成シリカ粉末が高純度であることはもちろ
ん製造時の汚染を避ける必要があり、このため成形品を
乾燥し、焼結する雰囲気も外部からの汚染を防ぐため
に、クラス1000、望ましくはクラス100の高いク
リーン度が必要である。
In order to obtain high-purity quartz glass, the raw material synthetic silica powder must be of high purity, and it is necessary to avoid contamination during manufacturing. Therefore, the molded product is dried and sintered. The atmosphere also needs high cleanliness of class 1000, preferably class 100, in order to prevent contamination from the outside.

【0020】高密度化は、成形に際してスラリーを0.
5kg/cm2以上、望ましくは2.0kg/cm2以上
の加圧で成形型に注入する加圧鋳込みによっておこな
う。
To increase the density, the slurry should have a density of 0.
It is carried out by pressure casting in which the pressure is 5 kg / cm 2 or more, preferably 2.0 kg / cm 2 or more and is injected into the mold.

【0021】その後、低温で充分脱気、脱水を行い、8
00〜1000℃で1〜2時間乾燥処理し、さらに15
00℃で焼結し、石英ガラスターゲットを得る。
After that, deaeration and dehydration are performed at a low temperature to obtain 8
Dry for 1-2 hours at 00-1000 ° C, then 15
Sintering at 00 ° C. gives a quartz glass target.

【0022】また、スパッタリング中、ターゲット表面
の温度が上昇し、裏面の冷却面との温度差からターゲッ
トが破損することがある。このため石英ガラスの粘性は
1200℃で3.16×1012ポアズ以上、望ましくは
4×1012ポアズ以上あることが必要である。
Further, during sputtering, the temperature of the target surface rises, and the target may be damaged due to the temperature difference between the back surface and the cooling surface. Therefore, it is necessary that the viscosity of the quartz glass at 1200 ° C. is 3.16 × 10 12 poise or more, preferably 4 × 10 12 poise or more.

【0023】膜の汚染を防止するためには、ターゲット
表面が滑らかであることが必要であり、通常は機械加工
で砥粒径#500相当のSiCあるいはAl23による
研磨がおこなわれている。
In order to prevent the contamination of the film, it is necessary that the surface of the target is smooth, and normally, the polishing is performed by machining with SiC or Al 2 O 3 having an abrasive grain size of # 500. ..

【0024】これに対して本発明は汚染しない鋳型で成
形するため、不純物の混入を極めて小さくすることが出
来る。また、クリーンな雰囲気下で乾燥、焼結するため
純度を損なうことなく、高密度で、泡が少なく、かつ、
滑らかな面を持つ石英ガラスが製造できる。
On the other hand, according to the present invention, since the molding is performed with a mold which does not contaminate, the mixing of impurities can be made extremely small. Also, since it is dried and sintered in a clean atmosphere, it does not impair purity, it has high density, few bubbles, and
Quartz glass with a smooth surface can be manufactured.

【効果】【effect】

【0025】本発明によって得られた石英ガラスは、タ
ーゲットに広く用いられている合成石英ガラスと同等の
純度を有し、天然石英ガラスと同等に泡が少ないため、
従来では、到底到達できないようなスパッタ特性が期待
でき、さらに、密度が天然透明石英ガラスと同等なので
機械的強度も強い。
The quartz glass obtained according to the present invention has the same purity as synthetic quartz glass widely used for targets and has less bubbles as much as natural quartz glass.
Conventionally, sputter characteristics that cannot be reached at all can be expected, and since the density is similar to that of natural transparent quartz glass, it has high mechanical strength.

【0026】また、高温粘性が高いので、前記天然透明
石英ガラスなみの耐熱性を有し、したがって、本発明に
よる透明石英ガラスターゲットは高度化されたELや液
晶用基板に最適のターゲットである。
Further, since the high temperature viscosity is high, it has heat resistance similar to that of the natural transparent quartz glass. Therefore, the transparent quartz glass target according to the present invention is an optimum target for sophisticated EL and liquid crystal substrates.

【0027】[0027]

【実施例】以下に、実施例を用いてさらに具体的に説明
するが、本発明はこれに限定されるものではない。
EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited thereto.

【0028】実施例1 原料として、1μm〜10μmに粒径分布を調整し、表
1に示す分析値を有する合成シリカ粉末を用い、該合成
シリカ粉末を、溶媒として蒸留水、分散剤としてアルコ
ール等の有機溶媒を使用して、回転ボールミルにより混
合し、濃度20重量%のスラリーを得、充分な脱泡をお
こなった。
Example 1 As a raw material, a synthetic silica powder having a particle size distribution adjusted to 1 μm to 10 μm and having an analysis value shown in Table 1 was used. The synthetic silica powder was distilled water as a solvent, alcohol as a dispersant, etc. The organic solvent of was used to mix by a rotary ball mill to obtain a slurry having a concentration of 20% by weight, and sufficient defoaming was performed.

【表1】 [Table 1]

【0029】得られたスラリーを、スパッタリング時の
エロージョンエリアが肉厚となるように直径90mm、
肉厚部8.4mm、厚部3.6mmの多孔質板鋳型で成
形し、その後溶媒および分散剤を除去して図1及び図2
に示す成形体を得た。成形に際してスラリーを3.0k
g/cm2加圧で成形型に注入する加圧鋳込みをおこな
い得られるターゲットの密度を高くした。
The obtained slurry is 90 mm in diameter so that the erosion area during sputtering becomes thick.
1 and 2 by molding with a porous plate mold having a wall thickness of 8.4 mm and a wall thickness of 3.6 mm, and then removing the solvent and dispersant.
A molded body shown in was obtained. 3.0k slurry for molding
The density of the obtained target was increased by performing pressure casting in which the pressure was applied to the mold with g / cm 2 pressure.

【0030】得られた成形体を、ドラッフー中で室温、
次いで300℃以内で充分脱気、脱水を行い、800〜
1000℃で1〜2時間乾燥し、さらに1500℃で焼
結し、直径75mm、肉厚部7mm、厚部3mmの石英
ガラスターゲットを得た。
The obtained molded body was placed in a Draft at room temperature,
Then, deaeration and dehydration are carried out at a temperature of 300 ° C.
It was dried at 1000 ° C. for 1 to 2 hours and further sintered at 1500 ° C. to obtain a quartz glass target having a diameter of 75 mm, a thick portion 7 mm, and a thick portion 3 mm.

【0031】得られた石英ガラスターゲット表面の粗さ
を測定したら、Ra=0.4μm、Rmax=4.2μmで
あり、砥粒径#500のSiCで研磨後、焼き仕上げを
した面と同等であった。
When the roughness of the surface of the obtained quartz glass target was measured, Ra was 0.4 μm and Rmax was 4.2 μm, and it was the same as the surface finished by baking after polishing with SiC having an abrasive grain size of # 500. there were.

【0032】この石英ガラスターゲットの見かけ比重
は、従来の天然石英ガラスが2.203、合成石英ガラ
スが2.201であるのに比し、2.202であった、
また、目視観察により泡は認められなかった。
The apparent specific gravity of this quartz glass target was 2.202, compared with 2.203 for conventional natural quartz glass and 2.201 for synthetic quartz glass.
Moreover, no bubbles were observed by visual observation.

【0033】このガラスを分光光度計を用い、分光透過
率を測定したところ、ガラス厚10mmにて波長200
〜5000nmの光をよく透過することが確認された。
結果を図3に示す。
The spectral transmittance of this glass was measured with a spectrophotometer.
It was confirmed that light of ˜5000 nm was well transmitted.
Results are shown in FIG.

【0034】このとき得られたガラスのアルカリ金属に
ついての分析値は、ナトリウム0.3ppm、カリウム
0.1ppm、リチウムは検出されなかった。その他の
分析値を表2に示す。
The analytical values of the alkali metal of the glass obtained at this time were 0.3 ppm of sodium, 0.1 ppm of potassium and lithium were not detected. The other analytical values are shown in Table 2.

【0035】また、泡径分布測定、および高温粘性測定
をおこなった。その結果を表3に示す。
Further, the bubble diameter distribution measurement and the high temperature viscosity measurement were performed. The results are shown in Table 3.

【0036】比較例 従来の、水晶粉を酸水素炎で溶融した石英ガラスのブロ
ックを切断、研削の機械加工を施し、表面を砥粉径#5
00のSiC研磨後焼仕上げして、平面形状の石英ガラ
スターゲットをつくった。得られたターゲットの分析値
を表2、泡径分布測定、および高温粘性測定結果を表3
に示す。
Comparative Example A conventional block of quartz glass obtained by melting crystal powder with an oxyhydrogen flame was cut and machined for grinding, and the surface had an abrasive powder diameter of # 5.
After polishing with SiC No. 00, it was baked and finished to form a quartz glass target having a planar shape. Table 2 shows the analysis values of the obtained target, Table 3 shows the bubble diameter distribution measurement, and Table 3 shows the high temperature viscosity measurement results.
Shown in.

【表2】 [Table 2]

【表3】 [Table 3]

【0037】得られたターゲットのスパッタリングテス
トを行い、その結果ターゲットの使用効率は、実施例1
記載のターゲットがその大部分がスパッタリングに供さ
れ約60%であったのに比し、30%と半分の使用効率
であった。
A sputtering test was conducted on the obtained target, and as a result, the target utilization efficiency was found to be the same as in Example 1.
Most of the targets described were subjected to sputtering, which was about 60%, and the usage efficiency was half that of 30%.

【0038】以上の結果より、本発明によれば、密度お
よび粘性が天然石英ガラスと同等で、純度が合成石英ガ
ラスと同等の泡の少ない石英ガラスが得られ、製造後何
らの機械加工を要せずにターゲット使用効率の高い石英
ガラスターゲットが得られることが明らかである。
From the above results, according to the present invention, it is possible to obtain a quartz glass which has the same density and viscosity as the natural quartz glass and the purity which is the same as that of the synthetic quartz glass and has a small amount of bubbles. It is clear that a quartz glass target with high target usage efficiency can be obtained without doing so.

【図の簡単な説明】[Brief description of the figure]

【図1】成形体の正面図。FIG. 1 is a front view of a molded body.

【図2】成形体のA−A線断面図。FIG. 2 is a sectional view taken along line AA of the molded body.

【図3】実施例の透過率FIG. 3 Transmittance of Example

【符号の説明】[Explanation of symbols]

1 成形体 2 肉厚部 3 厚部 A 実施例 1 Molded Body 2 Thick Part 3 Thick Part A Example

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 0.5〜20μmの粒度分布の合成シリ
カ粉末をスラリー化し、多孔質板鋳型を用いてスパッタ
時のエロージョンエリア内となる部分を肉厚してなる石
英ガラスターゲット。
1. A quartz glass target obtained by making a synthetic silica powder having a particle size distribution of 0.5 to 20 μm into a slurry, and using a porous plate mold to thicken a portion to be an erosion area at the time of sputtering.
【請求項2】 密度が2.20g/cm3以上であるこ
とを特徴とする請求項1記載の石英ガラスターゲット。
2. The quartz glass target according to claim 1, which has a density of 2.20 g / cm 3 or more.
【請求項3】 アルカリ金属不純物が0.5ppm以下
であることを特徴とする請求項1記載の石英ガラスター
ゲット。
3. The quartz glass target according to claim 1, wherein the alkali metal impurities are 0.5 ppm or less.
【請求項4】 不純物の総量が5ppm以下であること
を特徴とする請求項1記載の石英ガラスターゲット。
4. The quartz glass target according to claim 1, wherein the total amount of impurities is 5 ppm or less.
【請求項5】 泡の占有面積が0.5mm2/100c
3以下であることを特徴とする請求項1記載の石英ガ
ラスターゲット。
5. The area occupied by bubbles is 0.5 mm 2 / 100c.
The quartz glass target according to claim 1, wherein the quartz glass target is m 3 or less.
【請求項6】 1200℃における粘性が4×1012
アズ以上であることを特徴とする請求項1記載の石英ガ
ラスターゲット。
6. The quartz glass target according to claim 1, which has a viscosity at 1200 ° C. of 4 × 10 12 poise or more.
【請求項7】 焼結直後の表面の粗さRaが0.5μm
以下であることを特徴とする請求項1記載の石英ガラス
ターゲット。
7. The surface roughness Ra immediately after sintering is 0.5 μm.
The quartz glass target according to claim 1, wherein:
【請求項8】 焼結直後の表面の粗さRmaxが5μm以
下であることを特徴とする請求項1記載の石英ガラスタ
ーゲット。
8. The quartz glass target according to claim 1, wherein the surface roughness Rmax immediately after sintering is 5 μm or less.
【請求項9】 0.5〜20μmの粒度分布の合成シリ
カ粉末をスラリー化し、多孔質板を用いた鋳型を用い、
スパッタリング時のエロージョンエリア内となる部分を
肉厚した成形体を得、得られた成形体を乾燥・焼結する
ことを特徴とする石英ガラスターゲットの製造方法。
9. A synthetic silica powder having a particle size distribution of 0.5 to 20 μm is slurried, and a mold using a porous plate is used,
A method for producing a quartz glass target, comprising: forming a molded body having a thick portion in an erosion area during sputtering, and drying and sintering the obtained molded body.
【請求項10】 0.5〜20μmの粒度分布の純度の
高い合成シリカ粉末をスラリー化し、多孔質板を用いた
鋳型を用い、重量の80%以上をスパッタリング時のエ
ロージョンエリア内に存在する成形体を得、得られた成
形体を乾燥・焼結して石英ガラスを得、得られる透明石
英ガラスを高密度化することを特徴とする石英ガラスタ
ーゲットの製造方法。
10. Molding in which a highly pure synthetic silica powder having a particle size distribution of 0.5 to 20 μm is slurried and 80% or more of the weight is present in the erosion area during sputtering by using a mold using a porous plate. A method for producing a quartz glass target, comprising obtaining a body, drying and sintering the obtained formed body to obtain quartz glass, and densifying the obtained transparent quartz glass.
JP17621692A 1992-06-10 1992-06-10 Quartz glass target Pending JPH05341279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17621692A JPH05341279A (en) 1992-06-10 1992-06-10 Quartz glass target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17621692A JPH05341279A (en) 1992-06-10 1992-06-10 Quartz glass target

Publications (1)

Publication Number Publication Date
JPH05341279A true JPH05341279A (en) 1993-12-24

Family

ID=16009656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17621692A Pending JPH05341279A (en) 1992-06-10 1992-06-10 Quartz glass target

Country Status (1)

Country Link
JP (1) JPH05341279A (en)

Similar Documents

Publication Publication Date Title
EP0647600B1 (en) High-purity, opaque quartz glass, method for producing same and use thereof
KR20110110250A (en) Silica vessel and process for production therof
JPWO2004097080A1 (en) Silica glass crucible for pulling silicon single crystal and method for producing the same
JPH0912325A (en) High-purity opaque quartz glass and its production as well as its application
JP2010105880A (en) Quartz glass crucible having multilayered structure
JP2008208021A (en) METHOD FOR SINTERING FUSED SILICA TO PRODUCE SHAPED BODY COMPRISING CRYSTALLINE SiO2
CN102471126A (en) Production device for silica glass crucible and production method for silica glass crucible
JP5949760B2 (en) CaF2 polycrystal, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystal
WO2018210209A1 (en) Composition for glass, glass, preparation method and application thereof
US8394198B2 (en) Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
US10308556B2 (en) Sintered zircon material for forming block
WO2009122936A1 (en) Quartz glass crucible and process for producing the same
JP2016186117A (en) Cylindrical type sputtering target, cylindrical type sintered body, cylindrical compact, and production method therefor
JPWO2014148156A1 (en) Crucible for growing sapphire single crystal and method for growing sapphire single crystal
JPH05341279A (en) Quartz glass target
JP2016145421A (en) Polycrystal silicon sputtering target
CN108977879A (en) A kind of monocrystalline high-purity silica pot and preparation method thereof
JP2015027931A (en) Alkali-free glass for magnetic recording medium, and glass substrate for magnetic recording medium prepared using the same
JP2011001198A (en) Method for producing plasma-proof fluoride sintered compact
JP5969146B1 (en) Manufacturing method of cylindrical sputtering target and manufacturing method of cylindrical molded body
JPH0891857A (en) Annealing method of silica glass
JP2011179055A (en) Sputtering target
EP2163529B1 (en) Apparatus for the production of silica crucible
JP2007081145A (en) Dummy wafer
US20140306368A1 (en) Method for Producing a Semiconductor Using a Vacuum Furnace