JPH05335196A - Forming method of photomask pattern, exposing method of negative photosensitive resin, and substrate - Google Patents
Forming method of photomask pattern, exposing method of negative photosensitive resin, and substrateInfo
- Publication number
- JPH05335196A JPH05335196A JP13454992A JP13454992A JPH05335196A JP H05335196 A JPH05335196 A JP H05335196A JP 13454992 A JP13454992 A JP 13454992A JP 13454992 A JP13454992 A JP 13454992A JP H05335196 A JPH05335196 A JP H05335196A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- photosensitive resin
- substrate
- pattern
- negative photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、フォトマスクパターン
の形成方法およびネガ型感光性樹脂の露光方法ならびに
基板に係り、特に、薄膜厚膜多層基板、プリント回路基
板、半導体用基板および液晶基板における、紫外線ある
いは可視光露光によるフォトマスクパターンの設計方
法、およびネガ型感光性樹脂膜を使用したスルホールお
よびパターン加工形成方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a photomask pattern, an exposure method for a negative photosensitive resin, and a substrate, and particularly to a thin film thick film multilayer substrate, a printed circuit board, a semiconductor substrate and a liquid crystal substrate. The present invention relates to a method for designing a photomask pattern by exposure to ultraviolet light or visible light, and a method for forming a through hole and a pattern using a negative photosensitive resin film.
【０００２】[0002]
【従来の技術】従来、薄膜厚膜多層基板、プリント回路
基板、半導体用基板および液晶基板等の所定領域にパタ
ーニングを施す場合、所謂ホトエッチングが行われてい
る。すなわち、基板上にネガ型感光性樹脂膜（例えばレ
ジスト膜）を形成し、このネガ型感光性樹脂膜上に、所
定の透光領域，不透光領域からなるパターンを有するフ
ォトマスクを設け、紫外線あるいは可視光露光によって
フォトマスクのパターンを転写する。これを有機溶剤で
現像して所定パターンのネガ型感光性樹脂膜が得られ
る。次いで、このパターニングされたネガ型感光性樹脂
をマスクとして前記基板にエッチングして基板上にパタ
ーニングを施すものである。2. Description of the Related Art Conventionally, so-called photo-etching is performed when patterning a predetermined region of a thin film thick film multilayer substrate, a printed circuit board, a semiconductor substrate, a liquid crystal substrate or the like. That is, a negative photosensitive resin film (for example, a resist film) is formed on a substrate, and a photomask having a pattern of a predetermined light-transmitting region and a non-light-transmitting region is provided on the negative photosensitive resin film, The pattern of the photomask is transferred by exposure to ultraviolet light or visible light. This is developed with an organic solvent to obtain a negative photosensitive resin film having a predetermined pattern. Then, the patterned negative type photosensitive resin is used as a mask to etch the substrate to pattern the substrate.
【０００３】しかし、この工程において、例えば、前記
フォトマスクの透光領域にゴミなどの異物が存在する
と、その直下の透光領域は不透光領域と同じ状態とな
り、このようなネガ型感光性樹脂に現像を行うとピンホ
ールが形成されて、基板上に所定のパターニングを施す
ことができない。However, in this step, for example, if foreign matter such as dust is present in the light-transmitting region of the photomask, the light-transmitting region immediately below the light-transmitting region is in the same state as the non-light-transmitting region. When the resin is developed, pinholes are formed and it is impossible to perform a predetermined patterning on the substrate.
【０００４】従来、フォトマスク上の異物に対しての防
御方法としては、例えば、特開昭６２−３１８５５号公
報および特開昭６１−２４１７５６号公報に記載されて
いるように、フォトマスク上にペリクルを設け、異物が
付着しても基板上で異物による像が解像しないようにす
る技術が知られている。しかし、ペリクルを用いる方法
では、ペリクル付きマスクの製造にコストがかかるこ
と、マスクが汚染された場合、マスクの洗浄が出来ない
などの問題があった。Conventionally, as a method for protecting foreign matter on a photomask, for example, as disclosed in JP-A-62-31855 and JP-A-61-241756, a photomask is protected. A technique is known in which a pellicle is provided so that an image due to a foreign substance is not resolved on the substrate even if the foreign substance is attached. However, the method using a pellicle has problems that it costs much to manufacture a mask with a pellicle and that the mask cannot be cleaned when the mask is contaminated.
【０００５】また、例えば、特開昭６１−１５１５４１
号公報に記載されているように、同じパターンの描かれ
た二枚のフォトマスクを用いて二回露光することによ
り、フォトマスク上の異物に対しての存在確率を低減し
て、異物によって発生するピンホールを低減する方法が
ある。しかし、この方法では、同じパターンの描かれた
フォトマスクを二枚用意しなければならないこと、よっ
て基板に対するフォトマスクの位置合わせを二回行わな
ければならず、スループット、マスク管理、保管の点で
問題があった。Also, for example, Japanese Patent Laid-Open No. 61-151541.
As described in Japanese Patent Laid-Open Publication No. 2004-242242, the exposure probability is reduced twice by using two photomasks with the same pattern drawn, and the existence probability of the foreign matter on the photomask is reduced. There is a method of reducing pinholes. However, with this method, two photomasks with the same pattern must be prepared, and therefore the photomasks must be aligned with respect to the substrate twice, and in terms of throughput, mask management, and storage. There was a problem.
【０００６】[0006]
【発明が解決しようとする課題】上述のように、フォト
マスク上に保護膜であるペリクルを用いてフォトマスク
上の異物による像を解像させないようにする技術では、
基板洗浄が不可能、マスクの製造にコストがかかる等の
問題があった。また、フォトマスクを二枚用いる方法で
は、フォトマスクの基板に対する位置合わせを二度行う
必要があり、スループット、フォトマスク管理、保管の
点で問題があった。As described above, in the technique for preventing the image due to the foreign matter on the photomask from being resolved by using the pellicle as the protective film on the photomask,
There are problems that the substrate cannot be washed and the mask is expensive to manufacture. Further, in the method using two photomasks, it is necessary to perform the alignment of the photomask with respect to the substrate twice, which causes problems in throughput, photomask management, and storage.
【０００７】本発明は、上記従来技術の問題点を解決す
るためになされたもので、その目的は、フォトマスクの
パターンをフォトマスク上の異物の大きさから計算し、
パターンを作成することによって、一枚のフォトマスク
で、かつペリクルを用いず、洗浄が可能なフォトマスク
を設計するフォトマスクの形成方法を提供することにあ
る。また、本発明の他の目的は、フォトマスクが一枚
で、位置合わせが一度で実現可能なネガ型感光性樹脂の
露光方法を提供することにある。The present invention has been made to solve the above-mentioned problems of the prior art, and its object is to calculate the pattern of the photomask from the size of the foreign matter on the photomask,
It is an object of the present invention to provide a photomask forming method for designing a photomask that can be cleaned by forming a pattern and using a single photomask without using a pellicle. Another object of the present invention is to provide an exposure method for a negative photosensitive resin, which can realize alignment with one photomask at one time.
【０００８】本発明のさらに他の目的は、従来装置の改
造を必要とせず、フォトマスク上の異物による像を解像
させないネガ型感光性樹脂の露光方法を提供することに
ある。本発明のさらに他の目的は、特に大きな面積の基
板で、信頼度の高い無欠陥性が求められるものに適する
ネガ型感光性樹脂の露光方法を提供することにある。Still another object of the present invention is to provide a method for exposing a negative photosensitive resin which does not require remodeling of a conventional apparatus and does not resolve an image due to foreign matter on a photomask. Still another object of the present invention is to provide a method for exposing a negative photosensitive resin, which is suitable for a substrate having a large area and requiring high reliability and no defect.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係るフォトマスクパターンの形成方法の構
成は、フォトマスクのパターンを基板上のネガ型感光性
樹脂に転写するもので、前記フォトマスクと前記基板と
の相対位置を異ならせて複数回露光するフォトマスクパ
ターンの形成方法において、前記フォトマスク上に付着
することが想定される異物の少なくとも最大投影長さ以
上を、少なくとも一方向に所望の図柄を拡大したパター
ンを有するようにしたものである。In order to achieve the above object, the method of forming a photomask pattern according to the present invention comprises transferring a photomask pattern onto a negative photosensitive resin on a substrate. In a method of forming a photomask pattern in which the relative positions of the photomask and the substrate are different from each other, and the exposure is performed a plurality of times, at least the maximum projected length of foreign matter that is supposed to adhere on the photomask is at least one. It has a pattern in which a desired pattern is enlarged in the direction.
【００１０】また、上記目的を達成するために、本発明
に係るフォトマスクパターンの形成方法の構成は、フォ
トマスクのパターンを基板上のネガ型感光性樹脂に転写
するもので、前記フォトマスクと前記基板との相対位置
を異ならせて複数回露光するフォトマスクパターンの形
成方法において、ネガ型感光性樹脂の少なくとも解像限
界以上の長さを、少なくとも一方向に所望の図柄を拡大
したパターンを有するようにしたものである。In order to achieve the above object, the structure of the method for forming a photomask pattern according to the present invention transfers a pattern of a photomask onto a negative photosensitive resin on a substrate. In a method of forming a photomask pattern in which the relative position with respect to the substrate is differently exposed a plurality of times, at least the length of at least the resolution limit of the negative photosensitive resin, a pattern obtained by enlarging a desired pattern in at least one direction. I had it.
【００１１】さらに、上記目的を達成するために、本発
明に係るネガ型感光性樹脂の露光方法の構成は、上記の
パターンを有するフォトマスクを用いて、フォトマスク
と基板との位置合わせを行なったのち一度目の露光を行
い、その後、前記フォトマスクを、該フォトマスク上に
付着することが想定される異物の少なくとも最大投影長
さ以上を、少なくとも一方向ずらして二度目の露光を行
うようにしたものである。Further, in order to achieve the above object, in the construction of the method for exposing a negative photosensitive resin according to the present invention, the photomask having the above pattern is used to align the photomask with the substrate. After that, the first exposure is performed, and then the second exposure is performed by shifting the photomask by at least one direction by shifting at least the maximum projected length of the foreign matter that is supposed to adhere to the photomask by at least one direction. It is the one.
【００１２】さらに、上記目的を達成するために、本発
明に係るネガ型感光性樹脂の露光方法の他の構成は、上
記のパターンを有するフォトマスクを用いて、フォトマ
スクと基板との位置合わせを行なったのち一度目の露光
を行い、その後、前記フォトマスクを、ネガ型感光性樹
脂の少なくとも解像限界以上の長さを、少なくとも一方
向ずらして二度目の露光を行うようにしたものである。Further, in order to achieve the above object, another structure of the method for exposing a negative photosensitive resin according to the present invention is that a photomask having the above pattern is used to align the photomask with the substrate. After performing the first exposure, after that, the photomask, the length of at least the resolution limit of the negative photosensitive resin is shifted at least in one direction, so that the second exposure is performed. is there.
【００１３】[0013]
【作用】上記フォトマスクパターンの形成方法によれば
次の働きがある。フォトマスクのパターンを、フォトマ
スク上の異物の径の最大投影長さ以上を、あるいはネガ
型感光性樹脂の少なくとも解像限界以上の長さのいずれ
かを、少なくとも一方向に所望の図柄を拡大したものに
作成し、この一枚のフォトマスクを採用することによ
り、ペリクルが不必要で、洗浄が可能なフォトマスクを
設計することができる。According to the above photomask pattern forming method, the following functions are provided. Enlarge the desired pattern in at least one direction, either the maximum projected length of the diameter of the foreign material on the photomask or the length of at least the resolution limit of the negative photosensitive resin, for the photomask pattern. A photomask which can be washed without using a pellicle can be designed by producing the above photomask and adopting this one photomask.
【００１４】また、上記ネガ型感光性樹脂の露光方法に
よれば次の働きがある。上記のフォトマスクを採用し基
板との位置合わせを行なったのち、一度目の露光を行
い、その後このフォトマスクを、異物の少なくとも最大
投影長さ以上、あるいはネガ型感光性樹脂の少なくとも
解像限界以上の長さのいずれかを、少なくとも一方向ず
らして二度目の露光を行うことにより、従来装置の改造
を必要せず、特に大面積の基板に対してフォトマスク上
の異物による像を解像させること無く、フォトマスクが
一枚で、位置合わせが一度で実現できるネガ型感光性樹
脂の露光方法を可能にする。Further, according to the exposure method for the negative type photosensitive resin, the following functions are provided. After aligning with the substrate using the above photomask, the first exposure is performed, and then this photomask is used for at least the maximum projected length of foreign matter or at least the resolution limit of the negative photosensitive resin. By performing a second exposure by shifting any of the above lengths in at least one direction, it is possible to resolve the image due to foreign matter on the photomask especially on a large area substrate without the need to modify the conventional equipment. This enables an exposure method of a negative photosensitive resin that can be aligned at one time with a single photomask without performing the above.
【００１５】[0015]
【実施例】以下、本発明の一実施例を図１ないし図４を
参照して説明する。図１は、本発明の一実施例に係るフ
ォトマスクパターンの平面図、図２は、一般的なパター
ンとマスク上に付着することが想定される異物とを示し
たフォトマスクパターンの平面図、図３は、本発明の一
実施例に係るネガ型感光性樹脂の露光方法における一度
目の露光を示す要部断面図、図４は、図３のネガ型感光
性樹脂の露光方法における二度目の露光を示す要部断面
図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a plan view of a photomask pattern according to an embodiment of the present invention, and FIG. 2 is a plan view of a photomask pattern showing a general pattern and a foreign substance that is supposed to adhere to the mask. FIG. 3 is a cross-sectional view of an essential part showing the first exposure in the negative photosensitive resin exposure method according to one embodiment of the present invention, and FIG. 4 is the second exposure in the negative photosensitive resin exposure method of FIG. FIG. 6 is a cross-sectional view of a main part showing the exposure of FIG.
【００１６】図２に示すように、従来のフォトマスク１
Ａは、通常のパターンとして所定の透光領域に係る光透
光部２と、不透光領域すなわち所定の図柄を得るための
遮光部パターン３−１，３−２とを有している。４は、
フォトマスク１Ａ上に付着が想定される異物で、この異
物４の最大の長さはｌである。As shown in FIG. 2, a conventional photomask 1
A has a light-transmitting part 2 relating to a predetermined light-transmitting region as a normal pattern, and light-shielding part patterns 3-1 and 3-2 for obtaining a non-light-transmitting region, that is, a predetermined pattern. 4 is
The maximum length of the foreign matter 4 is 1 which is a foreign matter that is supposed to adhere to the photomask 1A.
【００１７】図１に示す本実施例のフォトマスク１は、
フォトマスク上に付着することが想定される異物４の少
なくとも最大の長さｌと同じ長さ以上一方向に所望の図
柄を拡大したパターン５−１，５−２を有している。た
とえば、２０μｍから１００μｍまでのスルーホールパ
ターンに対してフォトマスク１上に付着することが想定
される異物４の最大の長さｌを３０μｍとして一方向に
所望の図柄を拡大したものである。The photomask 1 of this embodiment shown in FIG.
It has patterns 5-1 and 5-2 obtained by enlarging a desired pattern in one direction at least as long as at least the maximum length l of the foreign substance 4 which is supposed to adhere to the photomask. For example, a desired pattern is enlarged in one direction with the maximum length 1 of the foreign substance 4 supposed to adhere on the photomask 1 for a through-hole pattern of 20 μm to 100 μm set to 30 μm.
【００１８】次に、図３および図４を参照して本実施例
のネガ型感光性樹脂の露光方法について説明する。図
３，４において、１はフォトマスク、４は異物、５は、
図柄を一定方向拡大した遮光部パターン、７は紫外線ま
たは可視光線などの光、８は、薄膜厚膜多層基板、プリ
ント回路基板、半導体用基板、液晶基板等のパターニン
グを施すべき基板、６は、基板８上のネガ型感光性樹脂
膜、９はネガ型感光性樹脂の露光部、１０はネガ型感光
性樹脂の未露光部、１１は、現像後にピンホールになる
未露光部を示している。Next, the method of exposing the negative photosensitive resin of this embodiment will be described with reference to FIGS. 3 and 4. In FIGS. 3 and 4, 1 is a photomask, 4 is a foreign matter, and 5 is
A light-shielding part pattern obtained by enlarging a pattern in a certain direction, 7 is light such as ultraviolet rays or visible light, 8 is a thin-film thick film multilayer substrate, a printed circuit board, a semiconductor substrate, a liquid crystal substrate or the like to be patterned, and 6 is A negative photosensitive resin film on the substrate 8, 9 is an exposed portion of the negative photosensitive resin, 10 is an unexposed portion of the negative photosensitive resin, and 11 is an unexposed portion that becomes a pinhole after development. ..
【００１９】まず、図３に示すように、所望の図柄を拡
大したパターン５を有するフォトマスク１（例えば図１
に示したもの）を採用し、このフォトマスク１と基板８
との位置合わせを行ナったのち一度目の露光を行う。こ
れにより、基板８上のネガ型感光性樹脂６には、ハッチ
ングで示す露光部９と遮光部パターン５の投影による未
露光部１０と異物４の投影による未露光部１１とが形成
される。本実施例では、一度目の露光を終えた時点で現
像を行なったところ、フォトマスク１上に強制的に付着
した異物によるピンホールの発生は、１００ｍｍ×１０
０ｍｍ中に８０ケ所認められた。First, as shown in FIG. 3, a photomask 1 having a pattern 5 in which a desired pattern is enlarged (for example, FIG. 1).
(Shown in FIG. 1) is adopted, and the photomask 1 and the substrate 8 are
After aligning with, the first exposure is performed. As a result, on the negative photosensitive resin 6 on the substrate 8, an exposed portion 9 shown by hatching, an unexposed portion 10 formed by projection of the light shielding portion pattern 5 and an unexposed portion 11 formed by projection of the foreign matter 4 are formed. In this embodiment, when the development was performed at the time when the first exposure was completed, the pinholes generated by the foreign matter forcedly adhered on the photomask 1 were 100 mm × 10.
80 spots were found in 0 mm.
【００２０】次に、図４に示すように、上述の一度目の
露光後、フォトマスク１上に付着することが想定される
異物４の少なくとも最大の長さｌと同じ長さ以上一方向
にフォトマスクをずらして（図４では右方向にｌだけず
らす）、二度目の露光を行なった。これにより、基板８
上のネガ型感光性樹脂６には、所望の未露光部１０Ａと
露光部９Ａとが図のように得られた。一度目の露光で発
生した現像後にピンホールとなる未露光部１１は二度目
の露光により消失している。本実施例では、二度目の露
光を終えた時点で現像を行なったところ、フォトマスク
１上に強制的に付着した異物によるピンホールの発生は
１００ｍｍ×１００ｍｍ中に０であった。Next, as shown in FIG. 4, after the above-described first exposure, at least the maximum length l of the foreign substance 4 which is supposed to be attached on the photomask 1 is equal to or longer than the maximum length l in one direction. The photomask was shifted (shifted to the right by 1 in FIG. 4), and the second exposure was performed. As a result, the substrate 8
On the negative photosensitive resin 6 above, desired unexposed portions 10A and exposed portions 9A were obtained as shown in the figure. The unexposed portion 11 that has become a pinhole after development, which has occurred in the first exposure, has disappeared in the second exposure. In the present example, when the development was performed at the time when the second exposure was finished, the pinholes generated by the foreign matter forcibly adhering to the photomask 1 were 0 in 100 mm × 100 mm.
【００２１】上記の実施例では、図１に示すフォトマス
クは、フォトマスク上に付着することが想定される異物
４の少なくとも最大の長さｌと同じ長さ以上一方向に所
望の図柄を拡大したパターン５−１，５−２を有してい
る例を説明したが、本発明はこれに限らず、ネガ型感光
性樹脂の少なくとも解像限界以上の長さを、少なくとも
一方向に所望の図柄を拡大したパターンを有するフォト
マスクとしてもよい。In the above-described embodiment, the photomask shown in FIG. 1 enlarges a desired pattern in one direction at least as long as at least the maximum length l of the foreign substance 4 which is supposed to adhere to the photomask. However, the present invention is not limited to this, and the length of at least the resolution limit of the negative photosensitive resin is desired in at least one direction. A photomask having a pattern in which the design is enlarged may be used.
【００２２】また、上記の実施例では、一度目の露光
後、フォトマスク１上に付着することが想定される異物
４の少なくとも最大の長さｌと同じ長さ以上一方向にフ
ォトマスクをずらして二度目の露光を行うネガ型感光性
樹脂の露光方法を説明したが、本発明はこれに限らず、
一度目の露光後、ネガ型感光性樹脂の少なくとも解像限
界以上の長さを、少なくとも一方向以上フォトマスクを
ずらして二度目の露光を行うようにしても差し支え無
い。Further, in the above embodiment, after the first exposure, the photomask is shifted in one direction by at least the same length as the maximum length l of the foreign substance 4 which is supposed to adhere on the photomask 1. The method of exposing the negative photosensitive resin for performing the second exposure has been described above, but the present invention is not limited to this.
After the first exposure, it is possible to perform the second exposure by shifting the length of the negative photosensitive resin of at least the resolution limit at least in one direction or more in the photomask.
【００２３】[0023]
【発明の効果】以上詳細に説明したように、本発明によ
れば、フォトマスクのパターンをフォトマスク上の異物
の大きさから計算し、パターンを作成することによっ
て、一枚のフォトマスクで、かつペリクルを用いず、洗
浄が可能なフォトマスクを設計するフォトマスクの形成
方法を提供することができる。また、本発明によれば、
フォトマスクが一枚で、位置合わせが一度で実現可能な
ネガ型感光性樹脂の露光方法を提供することができる。As described in detail above, according to the present invention, the pattern of the photomask is calculated from the size of the foreign matter on the photomask, and the pattern is created. Further, it is possible to provide a photomask forming method for designing a photomask that can be cleaned without using a pellicle. Further, according to the present invention,
It is possible to provide an exposure method for a negative photosensitive resin, which can realize alignment with one photomask at one time.
【００２４】さらに、本発明によれば、従来装置の改造
を必要とせず、フォトマスク上の異物による像を解像さ
せないネガ型感光性樹脂の露光方法を提供することがで
きる。さらに、特に大きな面積の基板で、信頼度の高い
無欠陥性が求められるものに適するネガ型感光性樹脂の
露光方法を提供することができる。Furthermore, according to the present invention, it is possible to provide a method for exposing a negative photosensitive resin which does not require remodeling of a conventional apparatus and does not resolve an image due to foreign matter on a photomask. Furthermore, it is possible to provide a method for exposing a negative photosensitive resin suitable for a substrate having a particularly large area and requiring high reliability and no defect.
【図１】本発明の一実施例に係るフォトマスクパターン
の平面図である。FIG. 1 is a plan view of a photomask pattern according to an embodiment of the present invention.
【図２】一般的なパターンとマスク上に付着することが
想定される異物とを示したフォトマスクパターンの平面
図である。FIG. 2 is a plan view of a photomask pattern showing a general pattern and a foreign substance that is supposed to adhere to the mask.
【図３】本発明の一実施例に係るネガ型感光性樹脂の露
光方法における一度目の露光を示す要部断面図である。FIG. 3 is a cross-sectional view of essential parts showing a first exposure in the method for exposing a negative photosensitive resin according to the embodiment of the present invention.
【図４】図３のネガ型感光性樹脂の露光方法における二
度目の露光を示す要部断面図である。FIG. 4 is a sectional view of an essential part showing a second exposure in the exposure method for the negative photosensitive resin of FIG.
１ フォトマスク ２ 光透過部 ４ 異物 ５，５−１，５−２ 遮光部パターン ６ ネガ型感光性樹脂膜 ７ 光 ８ 基板 ９，９Ａ 露光部 １０，１０Ａ 未露光部 １１ 未露光部 DESCRIPTION OF SYMBOLS 1 Photomask 2 Light transmission part 4 Foreign material 5,5-1,5-2 Light-shielding part pattern 6 Negative photosensitive resin film 7 Light 8 Substrate 9,9A Exposed part 10,10A Unexposed part 11 Unexposed part
Claims (8)
型感光性樹脂に転写するもので、前記フォトマスクと前
記基板との相対位置を異ならせて複数回露光するフォト
マスクパターンの形成方法において、 前記フォトマスク上に付着することが想定される異物の
少なくとも最大投影長さ以上を、少なくとも一方向に所
望の図柄を拡大したパターンを有することを特徴とする
フォトマスクパターンの形成方法。1. A method for forming a photomask pattern, wherein a pattern of a photomask is transferred to a negative photosensitive resin on a substrate, and the photomask and the substrate are exposed at a plurality of times with different relative positions. A method for forming a photomask pattern, which has a pattern in which a desired pattern is enlarged in at least one direction in at least the maximum projected length of a foreign substance that is supposed to adhere to the photomask.
型感光性樹脂に転写するもので、前記フォトマスクと前
記基板との相対位置を異ならせて複数回露光するフォト
マスクパターンの形成方法において、 ネガ型感光性樹脂の少なくとも解像限界以上の長さを、
少なくとも一方向に所望の図柄を拡大したパターンを有
することを特徴とするフォトマスクパターンの形成方
法。2. A method for forming a photomask pattern, wherein a pattern of a photomask is transferred onto a negative photosensitive resin on a substrate, and the photomask and the substrate are exposed at a plurality of times with different relative positions. The length of at least the resolution limit of the negative photosensitive resin,
A method for forming a photomask pattern, which has a pattern in which a desired pattern is enlarged in at least one direction.
マスクを用いて、フォトマスクと基板との位置合わせを
行なったのち一度目の露光を行い、その後、前記フォト
マスクを、該フォトマスク上に付着することが想定され
る異物の少なくとも最大投影長さ以上を、少なくとも一
方向にずらして二度目の露光を行うことを特徴とするネ
ガ型感光性樹脂の露光方法。3. The photomask having the pattern according to claim 1, the photomask and the substrate are aligned with each other, and then the first exposure is performed, and then the photomask is placed on the photomask. An exposure method for a negative photosensitive resin, which comprises performing a second exposure by shifting at least one maximum projected length or more of a foreign substance which is supposed to be attached, in at least one direction.
マスクを用いて、フォトマスクと基板との位置合わせを
行なったのち一度目の露光を行い、その後、前記フォト
マスクを、ネガ型感光性樹脂の少なくとも解像限界以上
の長さを、少なくとも一方向ずらして二度目の露光を行
うことを特徴とするネガ型感光性樹脂の露光方法。4. The photomask having the pattern according to claim 1, the photomask and the substrate are aligned with each other, and then the first exposure is performed, and then the photomask is replaced with a negative photosensitive resin. The method for exposing a negative photosensitive resin, which comprises performing a second exposure by shifting at least a length not less than the resolution limit in at least one direction.
方法によりネガ型感光性樹脂を形成し、このネガ型感光
性樹脂をマスクにして基板にエッチングを施して作成し
たことを特徴とする薄膜厚膜多層基板。5. A negative photosensitive resin is formed by the exposure method according to claim 3 or 4, and the negative photosensitive resin is used as a mask to etch the substrate. Thin film thick film multilayer substrate.
方法によりネガ型感光性樹脂を形成し、このネガ型感光
性樹脂をマスクにして基板にエッチングを施して作成し
たことを特徴とするプリント回路基板。6. A negative-type photosensitive resin is formed by the exposure method according to claim 3 or 4, and the negative-type photosensitive resin is used as a mask to etch the substrate. Printed circuit board.
方法によりネガ型感光性樹脂を形成し、このネガ型感光
性樹脂をマスクにして基板にエッチングを施して作成し
たことを特徴とする半導体用基板。7. A negative photosensitive resin is formed by the exposure method according to claim 3 or 4, and the substrate is etched by using the negative photosensitive resin as a mask. Substrate for semiconductor.
方法によりネガ型感光性樹脂を形成し、このネガ型感光
性樹脂をマスクにして基板にエッチングを施して作成し
たことを特徴とする液晶基板。8. A negative type photosensitive resin is formed by the exposure method according to claim 3 or 4, and the negative type photosensitive resin is used as a mask to etch the substrate. Liquid crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454992A JPH05335196A (en) | 1992-05-27 | 1992-05-27 | Forming method of photomask pattern, exposing method of negative photosensitive resin, and substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13454992A JPH05335196A (en) | 1992-05-27 | 1992-05-27 | Forming method of photomask pattern, exposing method of negative photosensitive resin, and substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05335196A true JPH05335196A (en) | 1993-12-17 |
Family
ID=15130916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13454992A Pending JPH05335196A (en) | 1992-05-27 | 1992-05-27 | Forming method of photomask pattern, exposing method of negative photosensitive resin, and substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05335196A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004075234A1 (en) * | 2003-02-21 | 2004-09-02 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel manufacturing method |
| JP2005149832A (en) * | 2003-11-13 | 2005-06-09 | Toray Ind Inc | Manufacturing method of plasma display material member and plasma display |
| JP2007164085A (en) * | 2005-11-15 | 2007-06-28 | Nsk Ltd | Proximity exposure method |
| US8593602B2 (en) | 2006-04-27 | 2013-11-26 | Sharp Kabushiki Kaisha | Production method for liquid crystal display device and exposure device including exposure of alignment layers |
-
1992
- 1992-05-27 JP JP13454992A patent/JPH05335196A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004075234A1 (en) * | 2003-02-21 | 2004-09-02 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel manufacturing method |
| KR100709116B1 (en) * | 2003-02-21 | 2007-04-18 | 마쯔시다덴기산교 가부시키가이샤 | Plasma display panel manufacturing method |
| US7955787B2 (en) | 2003-02-21 | 2011-06-07 | Panasonic Corporation | Plasma display panel manufacturing method |
| JP2005149832A (en) * | 2003-11-13 | 2005-06-09 | Toray Ind Inc | Manufacturing method of plasma display material member and plasma display |
| JP4540968B2 (en) * | 2003-11-13 | 2010-09-08 | パナソニック株式会社 | Plasma display panel manufacturing method and plasma display |
| JP2007164085A (en) * | 2005-11-15 | 2007-06-28 | Nsk Ltd | Proximity exposure method |
| US8593602B2 (en) | 2006-04-27 | 2013-11-26 | Sharp Kabushiki Kaisha | Production method for liquid crystal display device and exposure device including exposure of alignment layers |
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