JPH1031300A - Halftone type phase shift mask and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the generation of ghosts, etc., on the circumference of the transfer images corresponding to the mask patterns of a halftone type phase shift mask and to prevent the obscuration of the transferred images when the area of the mask patterns increases. SOLUTION: Parts exclusive of fine patterns P1 and a large-area pattern P2 are formed of a transparent substrate 1 alone. The fine parts P1 and an inner peripheral part P3 of the pattern are formed on translucent phase shift films 2a of an Mo.Si material. The inner enclosure part P4 of the pattern is formed of a light shielding film 3a consisting of Cr, etc. Since the inside of the large-area pattern P2 is not entirely formed of the translucent phase shift film 2a but the inside enclosure part P4 is formed of the light shielding film 3a, the inner peripheral part P3 of the pattern formed of the translucent phase shift film 2a is limited to a prescribed width A.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an LSI, a VLSI
The present invention relates to a phase shift mask used as a pattern exposure original plate when forming an extremely fine pattern typified by the manufacture of a semiconductor integrated circuit such as a semiconductor integrated circuit, and a method of manufacturing the same. Further, the present invention relates to a photomask having a pattern mainly used in a projection exposure apparatus, and in particular, enables a high-resolution pattern transfer by giving a phase difference to projection exposure light passing through the photomask. And a method for manufacturing the same. More particularly, the present invention relates to a halftone type phase shift mask formed by forming a halftone material film of a desired pattern on a transparent substrate, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a phase shift mask,
Various types have been proposed. For example, a Levenson-type phase shift mask having a structure in which a transparent film is provided so as to invert the phase on one side adjacent to the opening on the mask, or a phase shifter having a resolution equal to or less than the resolution limit is formed around the pattern to be formed. There are a phase shift mask with an auxiliary pattern having a structure, a self-aligned phase shift mask having a structure in which a chromium pattern is formed on a substrate, and an overhang of a phase shifter is formed by overetching, or the like.

The phase shift mask of each of the above structures is provided with a chromium pattern and a shifter pattern on a substrate. Apart from this structure, a phase shift mask formed of only a shifter pattern is used as a transmission type phase shift mask. Shift masks and halftone phase shift masks are also known. A transmissive phase shift mask is a phase shift mask that separates patterns by utilizing the fact that light intensity becomes zero at a boundary between light transmitted through a transparent part and light transmitted through a phase shifter. Therefore, it is also called a shifter edge-based phase shift mask.

A halftone type phase shift mask is formed by forming a so-called semi-transparent phase shifter pattern having partial transparency with respect to projection exposure light on a substrate, and forming a boundary between the phase shifter patterns. This is a phase shift mask in which the pattern resolution is improved in a portion where the formed light intensity is zero. Since the transmission type phase shift mask and the halftone type phase shift mask have a simple layer structure, the manufacturing steps are easy and the defects on the mask are few.

[0005] Without using a phase shifter, for example, C
In a conventional photomask in which a desired pattern is formed by a light-shielding film such as r, a pattern having a small line width cannot be accurately transferred onto an exposure target such as a wafer. That is,
The resolution is poor. The wavelength of the exposure light is g-line (wavelength = 0.436).
μm), i-line (wavelength = 0.365 μm), and KrF excimer laser (wavelength = 0.254 μm), the resolution can be improved by gradually reducing the length. In that case, But there is still a limit. Halftone phase shift masks have been developed to overcome this limitation.In this halftone phase shift mask, the exposure light that passed through the light transmission pattern without inverting the phase and the light that passed through the phase shifter By causing light to interfere with the exposure light whose phase has been inverted, a high-resolution transfer pattern is obtained.

[0006]

However, in this halftone type phase shift mask, the pattern portion requiring the phase shift effect is a fine pattern whose line width is slightly wider than the wavelength of the exposure light. It is not necessary to use the phase shift effect for a large area pattern portion having a line width larger than that. In addition, in the case of such a large-area pattern portion, if the entire area is defined only by the translucent phase shift film, there is a problem that a ghost or the like is generated around a transfer image corresponding to the large-area pattern. .

If the area of the inner peripheral portion of the pattern defined by the translucent phase shift film inside the contour of the pattern portion is large, the exposure target is exposed by the exposure light passing through the light transmitting portion around the pattern portion. There has been a problem that a transferred image transferred on an object becomes unclear or a hole is formed in a portion of the translucent phase shift film.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in a halftone type phase shift mask, and when a pattern portion has a large area, a transfer image corresponding to the large area pattern portion is provided. In the case where the area of the inner peripheral portion of the pattern located inside the contour of the pattern portion becomes large, the transfer image transferred onto the exposure object It is an object of the present invention to prevent the exposure light from being blurred due to the transmitted exposure light and preventing a hole from being formed in a portion of the translucent phase shift film.

[0009]

In order to achieve the above object, a halftone type phase shift mask according to the present invention comprises:
In a halftone type phase shift mask formed by laminating a translucent phase shift film on a transparent substrate, an inner peripheral portion of a pattern formed with a predetermined width inside a contour of a pattern portion of a predetermined shape, and an inner peripheral portion of the pattern And a pattern inner part present inside the part, wherein the pattern inner part is defined by a translucent phase shift film, and the pattern inner part is defined by a light shielding film. Features.

The above-mentioned pattern portion may be formed by a pattern having such a fine size as to require the phase shift effect, or may be formed by a pattern having a large area so as not to require the phase shift effect. There is also. The pattern having a size fine enough to require the phase shift effect is a pattern having a size approximately twice the wavelength of the exposure light. For example, as exposure light, g-line (wavelength = 0.436 μm)
m), a line width of about 0.9 μm or less, i-line (wavelength = 0.365 μm), a line width of about 0.8 μm or less, and a KrF excimer laser (wavelength = 0.2
(54 μm), a line width of about 0.6 μm or less is considered to be a fine pattern according to the present invention. If such a fine pattern is partitioned by a translucent phase shift film, a high-resolution transfer image can be obtained by a desired phase shift effect. On the other hand, with respect to a large area pattern having a line width equal to or larger than the above line width dimension, even if the large area pattern is sectioned by a translucent phase shift film, improvement in resolution due to the phase shift effect cannot be expected so much.

As the translucent phase shift film, for example, Mo
And a compound containing Si as a main component, more specifically, for example, a material represented by a chemical symbol of MoSiO _X N _Y (X and Y are integers) can be used. In addition, Cr is used as a light shielding film.
(Chromium), CrO (chromium oxide), CrN (chromium nitride), CrON, CrOCN, or a composite film in which these are laminated can be used. When a composite film is used, for example, a two-layer structure as shown in FIGS. 7 and 8 or a three-layer structure as shown in FIG. 9 can be used.

The method for manufacturing a halftone type phase shift mask according to the present invention comprises: (1) a step of sequentially laminating a translucent phase shift layer, a light shielding layer, and a first resist layer on a transparent substrate; and (2) Patterning the first resist layer into a predetermined shape to form a first resist film in a state where portions other than a required pattern portion are missing; and (3) shading using the patterned first resist film as a mask Patterning the layer by etching to form a light-shielding film in a state where portions other than the required pattern portion are missing,
(4) The semi-transparent phase shift layer is patterned by etching using the patterned first resist film and the light-shielding film as a mask to form a semi-transparent phase shift film in which portions other than the required pattern portions are missing. (5) a step of removing the first resist film, (6) a step of laminating the second resist layer, and (7) an inner portion of the pattern inner portion narrower than the pattern portion by a predetermined width. A resizing step of generating data, and (8) patterning the second resist layer in accordance with the data of the inner portion of the pattern,
A step of forming a second resist film in a state where portions other than the inner portion of the pattern are missing; and
Patterning the light-shielding layer by etching using the resist film as a mask to form a light-shielding film in a state where portions other than the pattern inner part are missing; and (10) removing the second resist film. Features.

In the resizing process, the data of the inner portion of the pattern can be automatically generated according to a computer program based on the data of the target pattern portion, or coordinate information input means such as a so-called digitizer. It can also be generated by input from.

The pattern portion may be composed of both a fine pattern that requires a phase shift effect and a large area pattern that has a large area that does not require the phase shift effect. In such a case, in the resizing step, data of the pattern inner portion can be generated for both the fine pattern and the large area pattern, or the pattern inner portion can be generated only for the large area pattern. It is also possible to generate the data of the portion, and not to generate the data particularly for the inner portion of the pattern for the fine pattern.

In the halftone phase shift mask according to the first aspect, when exposing an exposure object such as a wafer, the exposure light passes through a portion other than the pattern portion and irradiates the wafer or the like. In the pattern portion including the portion and the inner peripheral portion of the pattern, a sufficient amount of exposure light for exposing a wafer or the like is blocked, that is, blocked. The pattern portion may be formed by a pattern that is fine enough to require the phase shift effect, or may be formed by a large area pattern that is wide enough not to require the phase shift effect.

If a fine pattern portion is defined by a translucent phase shift film, a desired phase shift effect can be obtained for the fine pattern by the function of the translucent phase shift film. You can get a pattern. On the other hand, when the area of the pattern portion is large, an inner peripheral portion of the pattern is provided with a predetermined width inside the contour of the pattern portion, and the inner peripheral portion of the pattern is defined by a translucent phase shift film. The inner portion of the pattern inside the portion is partitioned by a light-shielding film such as Cr.
In this way, by limiting the area of the translucent phase shift film, it is possible to prevent ghosts and the like from occurring around the transfer image corresponding to the large area pattern, Can prevent the transfer image transferred onto the object to be exposed from being blurred by the exposure light passing therethrough, and can prevent holes from being formed in the portion of the translucent phase shift film.

[0017]

DETAILED DESCRIPTION OF THE INVENTION

(Embodiment relating to halftone type phase shift mask)
FIG. 1 shows an embodiment of a halftone phase shift mask according to the present invention. FIG. 2 shows a sectional structure of the phase shift mask. In the illustrated example, a part of the effective pattern area of the phase shift mask is shown in an enlarged manner. Actually, a large number of the illustrated patterns are formed in one phase shift mask. The illustrated phase shift mask includes 4 × 4 = 16 fine patterns P1, a large area pattern P2 having a large area, and a pattern inner peripheral portion P3 formed with a predetermined width inside the outline of the large area pattern P2. , And a pattern inner contour portion P4 present inside the pattern inner peripheral portion P3. In the present embodiment, the fine pattern P1 includes a pattern inner peripheral portion P3 and a pattern inner peripheral portion P.
4 is not provided, but of course, the fine pattern P1
They may be formed inside.

In FIG. 2, the pattern inner peripheral portion P3 in the fine pattern P1 and the large area pattern P2 is defined by only the translucent phase shift film 2a. The pattern inner contour P4 is defined by a light shielding film 3a such as Cr. The portions other than the fine pattern P1 and the large-area pattern P2 are defined by the transparent substrate 1 alone.

Each fine pattern P1 has a dimension of T1 × T2. Each of these dimensions T1 and T2 is about 2 wavelengths of the exposure light for exposing the exposure object.
It is set to a value shorter than the double length. This dimension is fine enough to obtain the phase shift effect. Note that the phase shift effect is transferred by interference between light that passes through the translucent phase shift film 2a and has a phase inverted by 180 ° and light that passes through only the transparent substrate 1 and has no phase inverted. This has the effect of improving the resolution of the image. On the other hand, the large area pattern P2 has a size of T3 × T4. These dimensions T3 and T4 are both
The value is set to a value longer than about twice the wavelength of the exposure light. This dimension does not require the phase shift effect,
In other words, even if the entire area of the pattern P2 is formed of the translucent phase shift film, the dimensions are such that improvement in the resolution of the transferred image cannot be desired.

The width A of the pattern inner peripheral portion P3, that is, the distance between the outer peripheral edge of the pattern P2 and the outer peripheral edge of the pattern inner peripheral portion P4 is in the range of not less than the wavelength of the exposure light and not more than 100 μm. Preferably, it is set to any value within the range of not less than the wavelength of the exposure light and not more than 50 μm. If the exposure light is g-line, its wavelength is about 0.436 μm.
The wavelength is about 0.365 μm for m and i rays, and about 0.254 μm for KrF excimer laser.
μm.

When a transfer image is formed on an object to be exposed, such as a wafer, using this phase shift mask, FIG.
As shown in FIG. 2, the exposure light R is irradiated on the phase shift mask 6, and the wafer 7 is exposed to light transmitted through the phase shift mask 6, particularly light passing through portions other than the patterns P1 and P2. A transfer image of a desired pattern is formed on 7. If the phase shift mask of the present embodiment is configured as a so-called reticle mask,
Normally, a reduced image of about 1/5 is formed on the wafer 7.

The light that has passed through the fine pattern P1 and whose phase has been inverted causes interference with the light that has passed through the periphery thereof,
As a result, a phase shift effect is developed, and a clear and fine transfer image is obtained on the wafer 7. In addition, large area pattern P
The light that has transmitted through the inner peripheral portion P3 of the second pattern and has inverted phase causes interference with light that has passed through the peripheral portion of the second pattern, thereby exhibiting a phase shift effect.

With respect to the large-area pattern P2, only the portion having a predetermined annular width A inside the large-area pattern P2 is the translucent phase shift film 2a.
The pattern inner portion P4, which is the center portion, is defined by a light-shielding film such as Cr. If the entire area of the large area pattern P2 is defined by only the translucent phase shift film 2a, ghosts and the like may be generated around the transfer image corresponding to the large area pattern P2. In this case, the transfer image transferred onto the exposure object becomes unclear due to the exposure light passing through the light transmitting portion around the large area pattern P2, or the portion of the translucent phase shift film There is also a risk that a hole will be formed in the hole. On the other hand, the existence area of the translucent phase shift film 2a in the large area pattern P2 is
According to the present embodiment limited to the part 3, such a problem is solved.

(One Embodiment of Manufacturing Method of Phase Shift Mask of FIG. 1) FIGS. 3 and 4 show an embodiment of a manufacturing method of manufacturing the phase shift mask shown in FIG. FIG. 5 schematically shows a drawing system for drawing a pattern on a base material of a phase shift mask in the manufacturing method. In FIG.
The pattern data input device 8 includes, for example, a keyboard, a mouse, and the like.
Thereby, the pattern data of the fine pattern P1 and the large area pattern P2 is sent to the input port of the CPU (central processing unit) 9.

The arithmetic processing unit of the CPU 9 is the resize arithmetic unit 1
Contains 0. The resizing operation unit 10 performs, in accordance with a predetermined program stored in the memory 11, based on the pattern data of the large area pattern P2 among the fine pattern P1 and the large area pattern P2 sent from the pattern data input device 8. , With respect to the large-area pattern P2, the pattern inner peripheral portion P4 and therefore the pattern inner peripheral portion P having a width A
3 is calculated. Such resizing operation is not performed on the fine pattern P1.

The CPU 9 drives the image control unit 12 based on the data of the pattern calculated as described above,
Thus, the pattern screen of the phase shift mask is displayed on the screen of the CRT monitor 13. Also, the CPU 9
Sends the calculated pattern data to the drawing apparatus 14. The drawing apparatus 14 outputs an electron beam or exposure light based on the data, and the fine pattern P1 and the large area pattern P2 on the halfway product 6a of the phase shift mask are output by the electron beam or exposure light. The pattern inner part P4 and the like are drawn.

In the case of drawing using an electron beam, since the substrate of the phase shift mask is charged by the charge of the electron beam, it is widely practiced to form a conductive layer in an appropriate position on the substrate in order to prevent the charge. Have been done. In the case of drawing using exposure light, there is no need to worry about electrification, and thus it is not necessary to form such a conductive layer. In the following description, the conductive layer will not be particularly referred to assuming the case of drawing using exposure light, but it is necessary to use the conductive layer when performing drawing by an electron beam. Note that

Hereinafter, a method of manufacturing the phase shift mask of FIG. 1 will be described with reference to FIGS. First, FIG.
As shown in FIG. 1A, a translucent phase shift layer 2 made of a Mo.Si-based material and a light-shielding material such as Cr are formed on a transparent substrate 1 made of quartz by using a well-known film forming method. A light-shielding layer 3 and a first resist layer 4 made of a positive resist were sequentially laminated. The thickness of each layer is 1200 to 2000 ° for the translucent phase shift layer 2 and 300 to
1500 °, and the first resist layer 4
00 °.

Next, portions other than the fine pattern P1 and the large-area pattern P2 were exposed by an electron beam or exposure light R1 (FIG. 3 (b)), and further developed to remove portions other than the required patterns. State first resist film 4a
Was formed (FIGS. 3C and 3D). Further, using the first resist film 4a as a mask, light is shielded by ordinary wet etching using an etching solution prepared by adding perchloric acid to ceric ammonium nitrate or dry etching using a chlorine-based gas. The layer 3 was patterned to form a light-shielding film 3a in a state where portions other than the required pattern were missing (FIG. 3E). At this time, the translucent phase shift layer 2 is not etched by the above-mentioned etching agents.

Thereafter, the translucent phase shift layer 2 was patterned into a desired pattern of the translucent phase shift film 2a by dry etching using a fluorine-based gas such as CF ₄ or C ₂ F ₆ (FIG. 3F). . At this time, since the light-shielding film 3a functioning as a mask is not etched, the pattern of the translucent phase shift film 2a was obtained with extremely high dimensional accuracy. Next, by removing the first resist film 4a using oxygen plasma or sulfuric acid, a pattern having a fine pattern P1 and a large area pattern P2 is formed as shown in FIG. At this time, both patterns P1 and P2 are defined by a composite layer of the light shielding film 3a and the translucent phase shift film 2a, and the patterns P1 and P2 are formed.
The other non-pattern portions Q are defined by the transparent substrate 1.

Next, a second resist layer 5 is formed by applying a positive resist to the entire mask again.
(I)) Further, drawing is performed again by an electron beam or exposure light R2 (FIG. 4 (j)). The drawing at this time is performed according to the resize dimensions determined by the resize calculation unit 10 of the CPU 9 shown in FIG. The resize dimension is, as shown by a symbol R2 in FIG. 4K, a pattern inner portion P which is narrower by a predetermined width A than the large area pattern P2.
Equivalent to 4.

After that, the second resist layer 5 is developed to
A resist film 5a was formed (FIG. 4 (l)). As a result, as shown in FIG. 4 (m), the second resist film 5a is left in the region corresponding to the pattern inner part P4 inside the large-area pattern P2, as indicated by oblique lines. Next, using the second resist film 5a as a mask, the light-shielding film 3a was patterned by ordinary wet etching or dry etching using chlorine gas (FIG. 4 (n)). At this time, the translucent phase shift film 2a is not etched.

Then, the second process is performed using oxygen plasma or sulfuric acid.
By peeling off the resist film 5a, as shown in FIGS. 4 (o) and 4 (p), the fine pattern portion P1 and the inner peripheral portion P3 of the pattern are partitioned by the translucent phase shift film 2a. A phase shift mask was obtained in which the hull P4 was defined by the light-shielding film 3a.

FIG. 6 shows another embodiment of the pattern drawing system. This drawing system differs from the drawing system shown in FIG. 5 in that the method of setting the resize dimensions is modified. Specifically, a coordinate information input device 15 such as a so-called digitizer is connected to the input port of the CPU 9. It is connected. In the present embodiment, when setting an area corresponding to the pattern inner contour portion P4 corresponding to the large area pattern P2, the operator inputs position data to the coordinate information input device 15 by pen input, mouse input, or the like, As a result, the pattern inner peripheral portion P4 and thus the pattern inner peripheral portion P3 are set.

Although the present invention has been described with reference to the preferred embodiments, the present invention is not limited to those embodiments and can be variously modified within the technical scope described in the claims. For example, the fine pattern P shown in FIG.
The pattern 1 and the large area pattern P2 are patterns schematically illustrated for easy understanding of the description, and the pattern actually created is a pattern having a desired shape. Further, in the phase shift mask shown in FIG. 1, only the large area pattern P2 is provided with a pattern inner peripheral portion P3 and a pattern inner contour portion P4 therein, and the fine pattern P1 is provided.
It was decided not to provide them. However, the pattern inner peripheral portion P3 and the pattern inner contour portion P4 can be provided inside the fine pattern P1.

[0036]

According to the halftone type phase shift mask of the first aspect, a wide area inside the desired pattern is not formed by the translucent phase shift film, but the area where the translucent phase shift film is provided is provided. The pattern was limited to the inner peripheral portion of the pattern having a predetermined width A, and the inner peripheral portion of the pattern was formed by a light shielding film. As a result, it is possible to prevent a ghost or the like from occurring around the transfer image corresponding to the desired pattern,
In addition, it is possible to prevent the transferred image transferred onto the exposure target from being blurred due to the exposure light passing through the light transmitting portion around the desired pattern, and furthermore, a hole is formed in the portion of the translucent phase shift film. Opening can be prevented.

According to the halftone phase shift mask of the present invention, a high-resolution transfer pattern that faithfully reproduces a fine pattern can be obtained.

In a phase shift mask having a large area pattern as in the halftone type phase shift mask according to the third aspect, ghosts and the like are liable to occur particularly around the phase shift mask, and a transferred image corresponding to the pattern is unclear. And a hole is easily formed in the translucent phase shift film forming the large area pattern. However, if the area of the translucent phase shift film inside the large area pattern is limited to a predetermined area as in the present invention, all of the above problems can be solved.

According to the method for manufacturing a halftone type phase shift mask according to the sixth aspect, the halftone type phase shift mask according to the first aspect can be manufactured stably and reliably.

According to the method of manufacturing a halftone type phase shift mask according to the seventh aspect, the resize dimension corresponding to a desired pattern portion, which is a feature of the present invention, can be set uniformly and automatically.

According to the method of manufacturing a halftone type phase shift mask according to the present invention, the resize dimension corresponding to the desired pattern portion, which is a feature of the present invention, can be freely set according to the operator's request.

According to the method for manufacturing a halftone phase shift mask according to the ninth aspect, a phase shift effect can be effectively provided for a fine pattern, while a large area pattern which does not require the phase shift effect can be provided. By providing a complete light-shielding effect, transfer failures such as ghosts can be reliably prevented.

[0043]

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing one embodiment of a halftone type phase shift mask according to the present invention.

FIG. 2 is a cross-sectional view schematically showing a cross-sectional structure of the halftone type phase shift mask of FIG.

FIG. 3 is a view schematically showing one embodiment of a method for manufacturing a halftone phase shift mask according to the present invention in the order of steps.

FIG. 4 is a view schematically showing one embodiment of a method for manufacturing a halftone phase shift mask according to the present invention in the order of steps, and is a view showing a step following FIG. 3;

FIG. 5 is a block diagram illustrating an embodiment of an exposure / drawing apparatus.

FIG. 6 is a block diagram showing another embodiment of the exposure drawing apparatus.

FIG. 7 is a diagram showing a partial cross-sectional structure of one embodiment of a light-shielding film.

FIG. 8 is a diagram showing a partial cross-sectional structure of another embodiment of a light-shielding film.

FIG. 9 is a diagram showing a partial cross-sectional structure of still another embodiment of a light-shielding film.

10 is a diagram schematically showing a state in which a wafer is exposed using the phase shift mask shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Translucent phase shift layer 2a Translucent phase shift film 3 Light shielding layer 3a Light shielding film 4 First resist layer 4a First resist film 5 Second resist layer 5a Second resist film 6 Phase shift mask 7 Wafer (exposure target) A) Resize dimension P1 Fine pattern P2 Large area pattern P3 Pattern inner circumference P4 Pattern inner part Q Non-pattern area R1 First drawing exposure R2 Resize exposure

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Hideseori Karikawa 1-5-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. (72) Inventor Yusuke Hattori 1-1-5-1 Taito, Taito-ku, Tokyo Letterpress Printing Co., Ltd.

Claims (9)

[Claims] 1. A halftone type phase shift mask formed by laminating a translucent phase shift film on a transparent substrate, comprising: a pattern inner peripheral portion formed with a predetermined width inside a contour of a pattern portion having a predetermined shape; A pattern inner peripheral portion present inside the pattern inner peripheral portion, the pattern inner peripheral portion is defined by a translucent phase shift film, and the pattern inner peripheral portion is defined by a light shielding film. A halftone phase shift mask. 2. The halftone phase shift mask according to claim 1, wherein the pattern portion is formed to have a fine dimension to the extent that a phase shift effect is required. 3. The halftone type phase shift mask according to claim 1, wherein the pattern portion is formed by a large area pattern having an area large enough not to require a phase shift effect. Phase shift mask. 4. The halftone phase shift mask according to claim 1, wherein the translucent phase shift film is a compound containing Mo and Si as main components. A halftone phase shift mask. 5. The halftone phase shift mask according to claim 1, wherein the light-shielding film is made of Cr, CrO, CrN, CrON, CrO.
A halftone phase shift mask comprising CN or a composite film obtained by laminating them. 6. A method for manufacturing a halftone type phase shift mask in which a translucent phase shift film is laminated on a transparent substrate, wherein (1) a translucent phase shift layer is formed on the transparent substrate.
Sequentially stacking a light-shielding layer and a first resist layer;
(2) a step of patterning the first resist layer into a predetermined shape to form a first resist film in a state where portions other than a required pattern portion are missing; and (3) forming the first resist film patterned Patterning the light-shielding layer by etching as a mask to form a light-shielding film in a state where portions other than the required pattern portion are missing;
(4) A step of patterning the translucent phase shift layer by etching using the patterned first resist film and light-shielding film as a mask to form a translucent phase shift film in a state where portions other than the required pattern portions are missing. When,
(5) a step of stripping the first resist film, (6) a step of laminating the second resist layer, and (7) generating data of a pattern inner portion set to be narrower inward than the pattern portion by a predetermined width. (8) patterning the second resist layer in accordance with the data of the pattern inner portion to form a second resist film in a state where portions other than the pattern inner portion are missing, and (9) patterning A step of patterning the light-shielding layer by etching using the second resist film thus formed as a mask to form a light-shielding film in a state where portions other than the inner portion of the pattern are missing; and (10) a step of removing the second resist film A method for manufacturing a halftone type phase shift mask, comprising: 7. The method of manufacturing a halftone phase shift mask according to claim 6, wherein the generation of the data of the inner portion of the pattern in the resizing step is automatically performed by calculating according to a computer program based on the data of the pattern portion. A method for producing a halftone phase shift mask, wherein the method is generated. 8. The method of manufacturing a halftone phase shift mask according to claim 6, wherein the data of the pattern inner portion in the resizing step is generated by input from coordinate information input means. A method for manufacturing a halftone phase shift mask. 9. The method for manufacturing a halftone type phase shift mask according to claim 6, wherein the pattern portion is fine enough to require a phase shift effect. And a large area pattern portion that is so wide that the phase shift effect is not required, and in the resizing step, data of a pattern inner portion is generated only for the large area pattern portion. Of producing a halftone phase shift mask.