JPH05312654A - Temperature measuring device - Google Patents
Temperature measuring deviceInfo
- Publication number
- JPH05312654A JPH05312654A JP3382292A JP3382292A JPH05312654A JP H05312654 A JPH05312654 A JP H05312654A JP 3382292 A JP3382292 A JP 3382292A JP 3382292 A JP3382292 A JP 3382292A JP H05312654 A JPH05312654 A JP H05312654A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thermocouple
- support stand
- measuring device
- temperature measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、回転運動可能な温度測
定装置に関するものである。結晶成長装置やプロセス装
置等に適用できる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring device capable of rotational movement. It can be applied to a crystal growth apparatus or a process apparatus.
【０００２】[0002]
【従来の技術】従来から、金属・半導体の成長・加工技
術として分子線エピタキシー法、反応性イオンビームエ
ッチング法が用いられて来ている。この様な方法に於て
は、通常、図２に示す様に、被成長・加工材料ウェハ１
を、熱伝導の良いモリブデン等で作られた支持台２に、
Ｉｎ等で貼り付け、かつ、均一性の向上の為に、支持台
２を回転させながら、成長・加工を行っている。この
時、ヒータ８により加熱されたウェハの温度測定の為
に、支持台裏面中央に凹部３を設け、ここに、熱電対４
を挿入している。2. Description of the Related Art The molecular beam epitaxy method and the reactive ion beam etching method have been conventionally used as growth and processing technologies for metals and semiconductors. In such a method, as shown in FIG.
To the support base 2 made of molybdenum, etc., which has good thermal conductivity,
It is attached with In or the like, and growth and processing are performed while rotating the support base 2 in order to improve the uniformity. At this time, in order to measure the temperature of the wafer heated by the heater 8, a concave portion 3 is provided in the center of the back surface of the support base, and a thermocouple 4 is provided therein.
Have been inserted.
【０００３】[0003]
【発明が解決しようとする課題】以上述べた従来の温度
測定技術に於いては、熱電対による測定温度の精度を向
上させる為には、熱電対を、支持台に接触させる必要が
ある。一方、成長・加工の均一性を確保する為には、ウ
ェハすなわち支持台を回転させることが不可欠である。
この場合、支持台に接触している熱電対の先端が摩耗
し、これが容易に断線してしまうという問題点があっ
た。In the conventional temperature measuring technique described above, it is necessary to bring the thermocouple into contact with the support in order to improve the accuracy of the temperature measured by the thermocouple. On the other hand, in order to ensure the uniformity of growth and processing, it is essential to rotate the wafer, that is, the support base.
In this case, there is a problem that the tip of the thermocouple in contact with the support is worn and the wire is easily broken.
【０００４】そこで、熱電対を、支持台に接触しない様
に保持する方法がとられる事もある。しかし、この方法
では、真のウェハ温度と、熱電対で測定した温度との差
が大きくなってしまうという問題点があった。特に、２
００℃以下の低温領域を測定する場合、支持台からの熱
輻射強度の弱い事、及び、前に述べた様な成長・加工方
法が、真空中で行われることから、真のウェハ温度と熱
電対測定温度との差は非常に大きく５０℃程度にもな
り、この測定温度誤差が、成長・加工速度の精度に及ぼ
す影響は重大である。Therefore, a method of holding the thermocouple so as not to contact the support base may be adopted. However, this method has a problem that the difference between the true wafer temperature and the temperature measured by the thermocouple becomes large. Especially 2
When measuring a low temperature region of 00 ° C or less, the intensity of heat radiation from the support is weak, and the growth / processing method described above is performed in a vacuum, so the true wafer temperature and thermoelectric The difference between the measured temperature and the measured temperature is very large and reaches about 50 ° C., and the influence of this measured temperature error on the accuracy of the growth / processing speed is significant.
【０００５】本発明の目的は、この様な従来の欠点を除
去して、熱電対の摩耗がなく、かつ、測定温度誤差の非
常に小さい、簡便で新規な温度測定装置を提供すること
にある。An object of the present invention is to eliminate such drawbacks of the prior art and to provide a simple and novel temperature measuring device in which the thermocouple is not worn and the measurement temperature error is very small. ..
【０００６】[0006]
【課題を解決するための手段】本発明の温度測定装置
は、被加熱物に凹部を設け、この凹部内部に熱伝導性物
質が充てんされ、この熱伝導性物質に接触し、かつ、被
加熱物に接触しない様に熱電対が配置されていることを
特徴とする。The temperature measuring device of the present invention is provided with a recess in an object to be heated, and the inside of the recess is filled with a heat conductive substance, which is in contact with the heat conductive substance and which is to be heated. It is characterized in that the thermocouple is arranged so as not to come into contact with an object.
【０００７】[0007]
【作用】本発明に於いては、加熱された支持台の温度を
熱伝導性物質を媒介として熱電対に伝える為、支持台の
真の温度と、熱電対で測定した温度との差が極めて小さ
くなる。即ち高精度の温度測定が可能となる。また、熱
電対が支持台に接触していない為、熱電対の摩耗による
断線等の破損がなくなる。In the present invention, since the temperature of the heated support table is transmitted to the thermocouple through the thermally conductive substance, the difference between the true temperature of the support table and the temperature measured by the thermocouple is extremely small. Get smaller. That is, highly accurate temperature measurement becomes possible. Further, since the thermocouple is not in contact with the support base, there is no damage such as disconnection due to wear of the thermocouple.
【０００８】[0008]
【実施例】図１は本発明の装置を、ＩｎＰ試料の塩素
（Ｃｌ）を用いた反応性イオンビームエッチングに適用
した実施例を説明する図である。EXAMPLE FIG. 1 is a diagram for explaining an example in which the apparatus of the present invention is applied to reactive ion beam etching of an InP sample using chlorine (Cl).
【０００９】ＩｎＰのドライエッチングでは、試料温度
によるエッチング速度依存性が非常に大きく、温度を再
現性よく制御することが重要である。In dry etching of InP, the etching rate greatly depends on the sample temperature, and it is important to control the temperature with good reproducibility.
【００１０】円形のモリブデン製試料支持台２を回転式
加熱台５に装置する前に、予め、支持台２の中心部に設
けられた凹部３の中に、Ｉｎ：Ｇａ＝７５：２５重量％
のＩｎＧａ合金６を適量入れ、８０℃以上に一旦加熱し
た後、室温に冷却する。このＩｎＧａＡｓ合金の融点は
約８０℃であるので、この加熱・冷却されたＩｎＧａ合
金６は、凹部３の中に固体として固定される。また、こ
の支持台２に、被エッチング材料であるＩｎＰ試料７
を、Ｉｎにより貼り付ける。Before mounting the circular molybdenum sample support base 2 on the rotary heating base 5, In: Ga = 75: 25% by weight in advance in the recess 3 provided in the center of the support base 2.
InGa alloy 6 is added in an appropriate amount, once heated to 80 ° C. or higher, and then cooled to room temperature. Since the melting point of this InGaAs alloy is about 80 ° C., the heated and cooled InGa alloy 6 is fixed in the recess 3 as a solid. In addition, the InP sample 7 which is a material to be etched is mounted on the support base 2.
Is pasted with In.
【００１１】こうして、準備した支持台２を、エッチン
グ用真空装置内にある回転式加熱台５に装着する。この
時、装着前に予め、回転式加熱台５に設けられたヒータ
８を加熱する事により、同じく回転式加熱台５の中心部
に設けられた熱電対４の温度が常に１３０℃となる様
に、ヒータ８の電力を調整する。これにより、支持台２
が加熱台５に接近した時、凹部３中のＩｎＧａ合金６は
液体となり、加熱台５への装着時には、熱電対４の先端
が、ＩｎＧａ液体合金中に浸される。この時、熱電対４
が支持台２に接触しない様に、熱電対４の位置が予め調
節されている事が重要である。The support base 2 thus prepared is mounted on the rotary heating base 5 in the etching vacuum apparatus. At this time, by heating the heater 8 provided on the rotary heating table 5 in advance before mounting, the temperature of the thermocouple 4 provided at the center of the rotary heating table 5 is always 130 ° C. Then, the electric power of the heater 8 is adjusted. As a result, the support base 2
When approaching the heating table 5, the InGa alloy 6 in the recess 3 becomes a liquid, and when mounted on the heating table 5, the tip of the thermocouple 4 is immersed in the InGa liquid alloy. At this time, thermocouple 4
It is important that the position of the thermocouple 4 is adjusted in advance so as not to contact the support base 2.
【００１２】この状態で、回転式加熱台５を回転させる
ことにより、支持台２を回転しながら、ＩｎＰ試料７の
反応性イオンビーム・エッチングを、Ｃｌ+ イオン９
と、Ｃｌラジカル１０の両作用により行うと、試料温度
が精度良く制御されている為、エッチング深さ均一性・
エッチング速度再現性が非常に良好となる。また、熱電
対４は、支持台２に接触していないため、摩耗により断
線する事はない。また、凹部３中のＩｎＧａ合金６は、
凹部内径を充分小さくしておけば表面張力により、凹部
３の外に流れ出すことはない。In this state, the rotary heating table 5 is rotated to rotate the support table 2 to perform reactive ion beam etching of the InP sample 7 with Cl + ions 9
And the action of Cl radicals 10, the sample temperature is accurately controlled, so that the etching depth uniformity
The etching rate reproducibility is very good. Further, since the thermocouple 4 is not in contact with the support base 2, it does not break due to wear. Further, the InGa alloy 6 in the recess 3 is
If the inner diameter of the recess is made sufficiently small, it will not flow out of the recess 3 due to surface tension.
【００１３】本実施例では、熱伝導性物質として、Ｉｎ
Ｇａ合金を用いたが、熱伝導性が良好で、材料の加工・
成長温度で液体状となる物質ならば、他のものであって
も良い。また、この熱伝導性物質は、長時間加熱時の、
その量の減少や、蒸発による熱電対の汚染を避けるた
め、加熱温度での蒸気圧が出来るだけ低いものである事
が望ましい。In this embodiment, In is used as the heat conductive substance.
Although Ga alloy was used, it has good thermal conductivity,
Other substances may be used as long as they are liquid substances at the growth temperature. In addition, this heat conductive substance, when heated for a long time,
It is desirable that the vapor pressure at the heating temperature is as low as possible in order to reduce the amount thereof and avoid contamination of the thermocouple due to evaporation.
【００１４】本実施例では本発明を半導体プロセス装置
に適用した例を述べたが、気相成長装置や、半導体に限
らず金属、絶縁体等の加工・成長、あるいは実装装置に
適用できる。特に試料台が回転等の運動を行う装置に最
適である。In the present embodiment, an example in which the present invention is applied to a semiconductor process device has been described, but the present invention can be applied not only to a vapor phase growth device, but also to processing / growth of metals, insulators, etc., or mounting devices. In particular, it is most suitable for a device in which the sample table moves such as rotating.
【００１５】[0015]
【発明の効果】本発明によれば、熱電対の摩耗がなく長
寿命で、しかも測定精度の高い温度測定装置が得られ
る。According to the present invention, it is possible to obtain a temperature measuring device which is free from wear of a thermocouple, has a long life, and has high measurement accuracy.
【図１】本発明による温度測定装置の一実施例を説明す
るための断面図である。FIG. 1 is a cross-sectional view for explaining an embodiment of a temperature measuring device according to the present invention.
【図２】従来例の温度測定装置を説明するための断面図
である。FIG. 2 is a cross-sectional view for explaining a conventional temperature measuring device.
１ ウェハ ２ 支持台 ３ 凹部 ４ 熱電対 ５ 回転式加熱台 ６ ＩｎＧａ合金 ７ ＩｎＰ試料 ８ ヒータ ９ Ｃｌ+ イオン １０ Ｃｌラジカル1 Wafer 2 Support 3 Recess 4 Thermocouple 5 Rotary Heating Table 6 InGa Alloy 7 InP Sample 8 Heater 9 Cl + Ion 10 Cl Radical
Claims (1)
に、熱伝導性物質が充てんされ、この熱伝導性物質に接
触し、かつ、被加熱物に接触しない様に熱電対が配置さ
れていることを特徴とする温度測定装置。1. An object to be heated is provided with a concave portion, and the inside of the concave portion is filled with a thermally conductive substance, and a thermocouple is arranged so as to come into contact with the thermally conductive substance and not to come into contact with the object to be heated. A temperature measuring device characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3382292A JPH05312654A (en) | 1992-02-21 | 1992-02-21 | Temperature measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3382292A JPH05312654A (en) | 1992-02-21 | 1992-02-21 | Temperature measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05312654A true JPH05312654A (en) | 1993-11-22 |
Family
ID=12397180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3382292A Withdrawn JPH05312654A (en) | 1992-02-21 | 1992-02-21 | Temperature measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05312654A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021216A1 (en) * | 2001-08-29 | 2003-03-13 | Invax Technologies | Temperature sensing in controlled environment |
-
1992
- 1992-02-21 JP JP3382292A patent/JPH05312654A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003021216A1 (en) * | 2001-08-29 | 2003-03-13 | Invax Technologies | Temperature sensing in controlled environment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |