JPH05304046A - Dry-type high-voltage condensive capacitor - Google Patents

Abstract

PURPOSE:To realize a dry-type high-voltage phase advancing capacitor for power use, which is capable of increasing a potential gradient, has a high safety factor and is used at an important place for prevention of disasters. CONSTITUTION:A dry-type high-voltage phase advancing capacitor is manufactured into a structure, wherein three pieces of aggregates formed by series- connecting unit capacitors are bonded together into a star form, are housed and sealed in a sheathed metal case and sulfer hexafluoride gas is filled in the metal case, and is formed into a constitution, wherein metallized films, each having a deposited layer consisting of a mixed metal 2 of aluminium and zinc, are used for dielectrics of the capacitor, the surface resistances of the end parts, which are respectively bonded to metal spray electrode parts 3 for electrode lead-out use, of the deposited metal films are 1.5 to 5OMEGA/cm<2> and the surface resistance of at least one surface of the counter deposited electrodes is 10 to 25OMEGA/cm<2>.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry high-voltage phase-advancing capacitor with a large capacity for use in electric power and power factor improvement equipped with a resin potting capacitor. Is.

[0002]

2. Description of the Related Art Conventionally, aluminum or zinc has been used as a vapor-deposited metal of a dry high-voltage phase-advancing capacitor, and its sheet resistance value is 2 to 5 Ω / cm ² .

[0003]

However, when the above-mentioned conventional aluminum vapor-deposited metal layer or zinc metallized layer is used, there are the following problems, so that a higher potential gradient design and a higher potential gradient are used. It was extremely difficult to seek safety. That is, in the case of an aluminum metallized layer, the self-recovery performance is good because the self-recovery action during voltage application and aluminum oxide produced by the electrochemical reaction are insulators, but the self-recovery reduces the effective electrode area. However, it has the drawback of causing a decrease in capacitance. On the other hand, in the case of the zinc metallized layer, for the same reason as above, since the zinc oxide produced is a semiconductor substance, the decrease in capacitance is small, but the self-recovery property is poor and the withstand voltage level is lowered. Further, in a long-term continuous durability test, the insulation resistance value (CR value) may be reduced, which may result in accidental breakdown. Therefore, the potential gradient of the film cannot be increased in order to ensure safety and reliability, and as a result, it has been a factor of enlarging the overall shape of the dry high voltage phase-advancing capacitor. The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a dry high-voltage phase-advancing capacitor having a high potential gradient and high safety.

[0004]

In order to achieve the above object, in the dry high voltage phase advancing capacitor of the present invention, three sets of capacitor assemblies in which a plurality of insulating resin potting capacitors are connected in series are star-coupled (Y. (Combined) capacitor assembly, and an external metal case that stores and seals this
Sulfur hexafluoride filled inside this exterior metal case
(SF ₆₎ is composed of a gas, using the insulating resin potting capacitor dielectric Aluminum and aluminum-zinc mixed deposited metallized polypropylene films comprising a mixed vapor-deposited metal layer of zinc, wound the film, When the electrode is taken out by metal spraying to form one capacitor element, the surface resistance (R) of the end of the vapor-deposited metal film to be joined with the metal-sprayed electrode is R = 1.5 to ² Ω / cm ² , the opposite vapor-deposited electrode. The surface resistance value of at least one surface of R is 10 to 25 Ω / cm ² .

[0005]

Therefore, in the dry high-voltage phase-advancing capacitor of the present invention having the above-described structure, the mixed vapor deposition layer of aluminum and zinc causes the self-recovery portion peripheral electrode, which has been a drawback of the conventional aluminum vapor deposition electrode layer, and local electrochemical. The decrease in the capacitance of the voltage-applied life due to the oxidation of the vapor-deposited electrode layer in the reaction becomes extremely small due to the action of the zinc component whose oxidized portion becomes a semiconductor. In addition, the withstand voltage drop due to poor self-recovery performance, which is a drawback of the zinc vapor deposition electrode layer, and the accidental breakdown in the continuous durability test of the insulation resistance value (CR value), the surface resistance value of the aluminum / zinc mixed vapor deposition electrode layer R = 1.5 ~ 5Ω /
cm ² , at least one surface of the facing vapor deposition electrode R = 10 to 25
It will be solved by setting Ω / cm ² .

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A dry high voltage phase-advancing capacitor of an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a cross section of an aluminum / zinc mixed metal vapor-deposited polypropylene film in one embodiment of the present invention. In FIG.
Polypropylene film 1 and aluminum / zinc mixed metal 2
The aluminum-zinc mixed metallized polypropylene film on which is vapor-deposited is taken out by the metal sprayed electrode part 3. The vapor-deposited metal film end portion A joined to the metal sprayed electrode portion 3 is
It is set thicker than the vapor deposition film thickness of the main electrode portion B. The surface resistance value of the A portion was 3 Ω / cm ² , and the surface resistance value of the B portion was 20 Ω / cm ² . As is clear from FIG. 1, at least one of the facing vapor-deposited metals has a sheet resistance value of 15 to 25 Ω / cm ² . Figure 2 shows the aluminum of Figure 1.
This figure shows the time when self-healing occurs in the zinc mixed metal vapor deposition film. In FIG. 2, 4 is a vapor deposition film scattering portion due to self-healing of the aluminum / zinc mixed metal vapor deposition film, and 5 is an insulation defect. It is a department. Further, FIG. 3 is an enlarged view of a section of the self-healing portion taken along line XX ′ in FIG. FIG. 8 shows the amount of energy when the above-mentioned self-healing occurs, and is compared with the amount of energy when the self-healing occurs in the conventional example (FIGS. 9 and 10). Obviously, the energy amount of the embodiment of the present invention is less than 1/3 of that of the conventional example. As a result, the area of the vapor deposition film scattering portion 18 due to the self-healing caused by the insulation defect portion 19 of FIG. 10 of the conventional example becomes small as shown in the vapor deposition film scattering portion 4 due to the self-healing of FIG. 3 according to the present invention. Damage to the polypropylene film 1 is also reduced. Therefore, it also exhibits excellent characteristics in the life test characteristics described later.

FIG. 4 shows a wound capacitor element potted with an insulating resin (hereinafter referred to as a unit capacitor) according to one embodiment of the present invention, 3 is a metal sprayed electrode portion, 6 is a wound capacitor element, Reference numeral 7 is a lead wire, 8 is a capacitor case, 9 is an insulating resin, and 10 is an electric terminal. FIG. 5 shows the internal structure of the dry high-voltage phase-advancing capacitor according to one embodiment of the present invention, in which a required number of unit capacitors 11 are assembled in series and two similar assemblies are prepared. The two aggregates are star-coupled, housed in an outer metal case 12, sealed, and then filled with sulfur hexafluoride (SF ₆ ) gas 15. 13 is a neutral point lead wire, 14 is a lead wire, and 16 is glass. A sample having the above structure was manufactured under the conditions shown in Table 1.

[0008]

[Table 1]

The rating of the dry type high voltage phase advance capacitor is AC66.
It is 00V, 50Hz, 50Kvar. One embodiment of the present invention is shown in Table 1.
6 and 7, and symbols A to E in FIGS. 6 and 7 correspond to symbols A to E representing the types of vapor deposition electrodes in Table 1. Figure 6,
Figure 7 shows a dry high-voltage phase-advancing capacitor with a rating of 50 ℃ at n = 5.
Fig. 6 shows the results of continuous durability test with an applied voltage of 1.2E. Fig. 6 shows the capacity change (ΔC / C) and overcharge time (Hrs).
Is a graph, and FIG. 7 is a graph of the remaining rate and the overcharge time. As is clear from FIG. 6 and FIG. 7, the symbol A using the aluminum vapor deposition layer has good self-recovery performance (high residual rate during continuous durability test), but the decrease rate of capacitance (ΔC / C, ΔC is a decrease value of capacitance, and C is a large capacitance value before the continuous durability test. The symbol B using the zinc vapor-deposited layer has a small decrease rate of capacitance but poor self-recovery characteristic, and the overcharge time is 100H.
Capacitor destruction has begun around rs. In addition, the same sheet resistance R as before using a mixed metal vapor deposition layer of aluminum and zinc
In the symbol C of ^{2 to 5} Ω / cm ² , the decrease in electrostatic capacity is slightly larger than that of the symbol B and the self-recovery characteristic is better than that of the symbol B, but the breakdown of the capacitor starts from overcharge time of about 1000 Hrs. Further, the symbol E, in which the sheet resistance was R = 30 to 40 Ω / cm ² using the mixed metal vapor deposition of aluminum and zinc, showed a large decrease in capacitance and was better than the symbols B and C after self-recovery. The capacitor has been damaged from overcharge time of around 4000Hrs. On the other hand, the sheet resistance R of the main electrode portion using the aluminum-zinc mixed metal vapor deposition layer of the embodiment of the present invention R = 10 to 25 Ω / c
In the symbol D of m ^2, the rate of decrease in capacitance was small and the self-healing property was good, and even at the overcharge time of 20000 Hrs, no breakdown of the capacitor occurred and excellent durability test results were obtained. In this example, the case of a single-sided vapor-deposited polypropylene film was described, but other films such as a polyethylene terephthalate film and polyphenylene sulfide also provided similar effects. The same effect was obtained when a double-sided vapor deposition film was used.

[0010]

As is apparent from the description of the above embodiment,
The dry high-voltage phase-advancing capacitor of the present invention is excellent in self-recovery, has a small reduction rate of electrostatic capacity during continuous service, enables stable capacitors with stable characteristics, and further miniaturizes the capacitor. It has the effect of promoting weight reduction.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a metallized polypropylene film on which an aluminum / zinc mixed metal is deposited according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a case where self-recovery occurs in a metallized polypropylene film in one example of the present invention.

FIG. 3 is a sectional view taken along line XX ′ in FIG.

FIG. 4 is an internal structural diagram of a unit capacitor according to an embodiment of the present invention.

FIG. 5 is an internal structural diagram of a dry high voltage phase-advancing capacitor according to an embodiment of the present invention.

FIG. 6 is a graph showing a reduction rate of electrostatic capacitance as a result of continuous durability test of Examples of the present invention and a comparative capacitor.

FIG. 7 is a graph showing the residual ratio of the capacitors as the results of the continuous durability test of the examples of the present invention and the comparative capacitors.

FIG. 8 is a graph showing a necessary energy amount at the time of self-recovery in the example of the present invention and the conventional example.

FIG. 9 is a cross-sectional view of a metallized film obtained by vapor deposition of aluminum or zinc in a conventional example.

FIG. 10 is a diagram illustrating a case where self-healing occurs in a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Polypropylene film, 2 ... Mixed metal of aluminum and zinc, 3 ... Metal sprayed electrode part, 4, 18 ... Vapor deposition film scattering part by self-recovery, 5, 19 ... Insulation defect part, 6 ... Winding capacitor element, 7, 14 ... Lead wire, 8 ... Capacitor case, 9 ... Insulating resin, 10 ... Electrical terminal, 11 ... Unit capacitor, 12 ... Exterior metal case, 13 ... Neutral point lead wire, 15 ... Sulfur hexafluoride (SF ₆ ) gas , 16 ... Glass, 17 ... Aluminum or zinc metallization.

Claims (2)

[Claims] 1. A plurality of insulating resin potting capacitors
A capacitor assembly star-coupled (Y-coupled) with three sets of (unit capacitors) in series, an outer metal case that houses and seals the capacitor assembly, and the inside of the outer metal case is filled. Sulfur hexafluoride (S
F ₆₎ in a dry high-voltage capacitor formed of the gas, dry high pressure, characterized in that the use of aluminum-zinc mixed deposited metallized polypropylene film with a mixed vapor-deposited metal layer of aluminum and zinc in the dielectric of the insulation resin potting capacitor Phase-advancing capacitor. 2. An aluminum / zinc mixed vapor-deposited metallized polypropylene film is wound, and when the electrode is taken out by metal spraying to form one capacitor element, the end face of the vapor-deposited metal film joined to the metal sprayed electrode. dry high power capacitor according to claim 1, wherein the resistance value is equal to or 1.5 to 5 [Omega / cm ^2, to no 10 surface resistance of at least one surface of the opposing deposition electrodes is 25 [Omega] / cm ^2.