JPH0530051B2 - - Google Patents

Info

Publication number
JPH0530051B2
JPH0530051B2 JP57143210A JP14321082A JPH0530051B2 JP H0530051 B2 JPH0530051 B2 JP H0530051B2 JP 57143210 A JP57143210 A JP 57143210A JP 14321082 A JP14321082 A JP 14321082A JP H0530051 B2 JPH0530051 B2 JP H0530051B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57143210A
Other versions
JPS5933829A (en
Inventor
Shinichi Minami
Juji Tanida
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57143210A priority Critical patent/JPH0530051B2/ja
Publication of JPS5933829A publication Critical patent/JPS5933829A/en
Publication of JPH0530051B2 publication Critical patent/JPH0530051B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
JP57143210A 1982-08-20 1982-08-20 Expired - Lifetime JPH0530051B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57143210A JPH0530051B2 (en) 1982-08-20 1982-08-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57143210A JPH0530051B2 (en) 1982-08-20 1982-08-20

Publications (2)

Publication Number Publication Date
JPS5933829A JPS5933829A (en) 1984-02-23
JPH0530051B2 true JPH0530051B2 (en) 1993-05-07

Family

ID=15333444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57143210A Expired - Lifetime JPH0530051B2 (en) 1982-08-20 1982-08-20

Country Status (1)

Country Link
JP (1) JPH0530051B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57199221A (en) * 1981-06-02 1982-12-07 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57199221A (en) * 1981-06-02 1982-12-07 Toshiba Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5933829A (en) 1984-02-23

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