JPH05299752A - Q-switch - Google Patents
Q-switchInfo
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- JPH05299752A JPH05299752A JP4106533A JP10653392A JPH05299752A JP H05299752 A JPH05299752 A JP H05299752A JP 4106533 A JP4106533 A JP 4106533A JP 10653392 A JP10653392 A JP 10653392A JP H05299752 A JPH05299752 A JP H05299752A
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- electro
- sound wave
- electrode
- switch
- optic crystal
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はレーザ共振器のＱ値を
変化させてジャイアントパルスを得るためのＱスイッ
チ、特に電気光学結晶により光の偏光状態を制御してＱ
スイッチングを行うＥＯ（Ｅｌｅｃｔｒｏｏｐｔｉｃ）
Ｑスイッチに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Q switch for obtaining a giant pulse by changing the Q value of a laser resonator, and more particularly to a Q switch by controlling the polarization state of light by an electro-optic crystal.
EO (Electrooptic) for switching
It relates to a Q switch.
【０００２】[0002]
【従来の技術】図８は例えばW.Koechner著『Ｓolid Sta
te Laser Engineering 2nd Ed.』，Springer-Verlag ,p
41４〜431,(1988)に示された従来のＱスイッチの構成図
であり、図において１は電気光学結晶、２ａ、２ｂは電
気光学結晶１の対向する略平行の第１及び第２の側面、
３ａ、３ｂは第１及び第２の側面２ａ、２ｂ上に形成さ
れた第１及び第２の電極、４ａ、４ｂは第１の電極３
ａ、第２の電極３ｂに接続した第１及び第２の電圧印加
線、５はスイッチング電源、３０ａ、３０ｂはレーザ光
が入力あるいは出力される端面である。また図９はこの
Ｑスイッチを用いたレーザの構成図であり、６は全反射
鏡、７は出力鏡、８はレーザ媒質、９は偏光子である。2. Description of the Related Art FIG. 8 shows, for example, "Solid Sta" by W. Koechner.
te Laser Engineering 2nd Ed. ”, Springer-Verlag, p
It is a block diagram of the conventional Q switch shown in 414-431, (1988), 1 is an electro-optic crystal, 2a, 2b are the 1st and 2nd side surfaces of the electro-optic crystal 1 which oppose and which are substantially parallel to each other. ,
3a and 3b are first and second electrodes formed on the first and second side faces 2a and 2b, and 4a and 4b are first electrodes 3.
a, first and second voltage application lines connected to the second electrode 3b, 5 is a switching power supply, and 30a and 30b are end faces for inputting or outputting laser light. Further, FIG. 9 is a configuration diagram of a laser using this Q switch, 6 is a total reflection mirror, 7 is an output mirror, 8 is a laser medium, and 9 is a polarizer.
【０００３】電気光学結晶１としてはＫＤ* Ｐ，ＬｉＮ
ｂＯ3 などがあるが、ここでは潮解性などがなく、低電
圧駆動が可能なため一般に良く用いられているＬｉＮｂ
Ｏ3について説明する。第１および第２の電極３ａ、３
ｂは一般的に研磨された一対の平行な側面２ａ、２ｂ全
面にＣｒもしくはＮｉをベースとしＡｕをなどを蒸着し
て作製される。またレーザ光が通過する対向する端面３
０ａ、３０ｂは通常略平行に研磨され、反射防止膜が施
される。ＬｉＮｂＯ3 は一軸性の結晶であり電圧を印加
していない場合、ｘ軸方向、ｙ軸方向での屈折率はｎ
ｏ、ｚ軸方向の屈折率はｎｅである。光の伝搬方向をｚ
軸、電圧の印加方向をｘ軸方向にとると、屈折率楕円体
は式（１）で与えられる。As the electro-optic crystal 1, KD * P, LiN
Although there is bO 3 , there is no deliquescent property here and LiNb which is generally used because it can be driven at low voltage.
O 3 will be described. First and second electrodes 3a, 3
b is generally produced by vapor-depositing Au or the like on the basis of Cr or Ni on the entire surface of a pair of polished parallel side surfaces 2a, 2b. Also, the opposite end faces 3 through which the laser light passes
0a and 30b are usually polished substantially parallel to each other and provided with an antireflection film. LiNbO 3 is a uniaxial crystal, and when no voltage is applied, the refractive index in the x-axis direction and the y-axis direction is n.
The refractive index in the o and z axis directions is ne. Z is the direction of light propagation
When the axis and the voltage application direction are the x-axis direction, the index ellipsoid is given by the equation (1).
【０００４】 ｘ2 ／ｎｏ2 ＋ｙ2 ／ｎｏ2 −２γ22 ・Ｅｘ・ｘｙ＝１ （１） γ22：電気光学テンソルの２２成分 Ｅｘ：電圧印加により結晶内に発生する電界 式（１）は結晶軸ｘ、ｙをｚ軸に関して４５度回転した
結晶軸Ｘ、Ｙに変換し、すると式（２）のように変換さ
れる。X 2 / no 2 + y 2 / no 2 −2γ 22 · Ex · xy = 1 (1) γ 22 : 22 components of electro-optic tensor Ex: electric field generated in crystal by voltage application (1) is The crystal axes x and y are converted to crystal axes X and Y rotated by 45 degrees with respect to the z axis, and then converted as shown in Expression (2).
【０００５】 Ｘ2 （１／ｎｏ2 −γ22・Ｅｘ） ＋Ｙ2 （１／ｎｏ2 ＋γ22・Ｅｘ）＝１ （２） 式（２）より、電圧を印加したときの結晶軸はＸ、Ｙで
あり、各結晶軸における屈折率の電界に対する依存性は
式（３）、式（４）になる。X 2 (1 / no 2 −γ 22 · Ex) + Y 2 (1 / no 2 + γ 22 · Ex) = 1 (2) From the formula (2), the crystal axis when a voltage is applied is X, Y, and the dependence of the refractive index at each crystal axis on the electric field is given by equations (3) and (4).
【０００６】 ｎX ＝ｎｏ＋０．５・ｎｏ3 ・γ22・Ｅｘ （３）N X = no + 0.5 · no 3 · γ 22 · Ex (3)
【０００７】 ｎY ＝ｎｏ−０．５・ｎｏ3 ・γ22・Ｅｘ （４）N Y = no−0.5 · no 3 · γ 22 · Ex (4)
【０００８】ｘ方向またはｙ方向の偏光方向の持つ光が
入射した場合、伝搬に応じてＸ方向成分とＹ方向成分に
伝搬位相差ができるため出射時において偏光状態が入射
偏光状態から変化する。すなわち電気光学結晶１は印加
電圧の値により通過する光の偏光状態を任意に制御でき
ることとなる。When the light having the polarization direction of the x direction or the y direction is incident, the polarization state changes from the incident polarization state at the time of emission because the propagation phase difference is generated between the X direction component and the Y direction component according to the propagation. That is, the electro-optic crystal 1 can arbitrarily control the polarization state of light passing therethrough according to the value of the applied voltage.
【０００９】電気光学結晶１と偏光子９を用いたＥＯ
Ｑスイッチは多くの型のレーザ共振器構成で使用可能で
ある。ここでは便利のため、最も一般的に用いられる図
９のＱスイッチレーザ共振器構成でＱスイッチ動作につ
いて説明する。ＥＯ Ｑスイッチは偏光子９の通過偏光
方向と電気光学結晶１のｘ軸方向、もしくはｙ軸方向を
平行にするように構成される。電気光学結晶１に電圧を
印加しない条件では式（３）、式（４）より偏光状態は
変化しないため、偏光子９の通過偏光方向の光は全反射
鏡６、出力鏡７の間で共振可能である。電圧を印加した
場合は偏光子９を通過した直線偏光の光は、全反射鏡６
で折り返される間に電気光学結晶１を２度通過し偏光状
態が変化する。これにより、偏光子９に到達した光の一
部はレーザ共振器の外に放出される。特に電気光学結晶
１に印加する電圧が伝搬位相差がπ／２を与える電圧Ｖ
A （ただしＡ＝λ／４、以下同様）の時、偏光子９到達
する光は偏光子透過偏光に対し直交した偏光となるため
すべての光を共振器外に放出する。EO using electro-optic crystal 1 and polarizer 9
Q-switches can be used in many types of laser cavity configurations. For convenience, the Q switch operation will be described with the most commonly used Q switch laser resonator configuration of FIG. The EO Q switch is configured to make the passing polarization direction of the polarizer 9 parallel to the x-axis direction or the y-axis direction of the electro-optic crystal 1. Since the polarization state does not change from the formulas (3) and (4) under the condition that no voltage is applied to the electro-optic crystal 1, light in the polarization direction passing through the polarizer 9 resonates between the total reflection mirror 6 and the output mirror 7. It is possible. When a voltage is applied, the linearly polarized light that has passed through the polarizer 9 is reflected by the total reflection mirror 6
While being folded back at, the light passes through the electro-optic crystal 1 twice and the polarization state changes. As a result, part of the light that has reached the polarizer 9 is emitted to the outside of the laser resonator. In particular, the voltage applied to the electro-optic crystal 1 is a voltage V that gives a propagation phase difference of π / 2.
When A (however, A = λ / 4, the same applies hereinafter), the light reaching the polarizer 9 becomes a polarization orthogonal to the polarization transmitted by the polarizer, so that all the light is emitted to the outside of the resonator.
【００１０】レーザ媒質８を励起している状態で、電気
光学結晶１にＶA を与えれば、レーザ媒質８から生じる
自然放出光は共振器内で共振できないためレーザ発振は
抑止され励起エネルギーは反転分布の形でレーザ媒質８
に蓄積される。十分にエネルギーが蓄積された時に、ス
イッチング電源５により電圧をＶA から０にスイッチン
グするとレーザ共振が起こり、急激な誘導放出によりレ
ーザ媒質８に蓄積されたエネルギーを光エネルギーに変
換する。このエネルギーの１部は出力鏡７からジャイア
ントパルスとして放出される。If V A is applied to the electro-optical crystal 1 while the laser medium 8 is being excited, spontaneous emission light generated from the laser medium 8 cannot resonate in the resonator, so that laser oscillation is suppressed and the excitation energy is inverted. Laser medium in the form of distribution 8
Accumulated in. When the voltage is switched from V A to 0 by the switching power supply 5 when sufficient energy is accumulated, laser resonance occurs, and the energy accumulated in the laser medium 8 is converted into light energy by abrupt stimulated emission. A part of this energy is emitted from the output mirror 7 as a giant pulse.
【００１１】実際の使用においては、式（１）に示した
電気光学定数γ22は、電気光学結晶１が圧電結晶であ
り、これで生じる歪みにより光弾性効果が屈折率変化を
おこすため式（５）に示すγ22´に置き換えられる。In actual use, the electro-optic constant γ 22 shown in equation (1) is obtained because the electro-optic crystal 1 is a piezoelectric crystal and the distortion caused by this causes the photoelastic effect to change the refractive index. It is replaced with γ 22 ′ shown in 5).
【００１２】 γ22´＝γ22＋ｐ2k・ｄ2k （５） ｐ2k：光弾性定数 ｄ2k：圧電定数Γ 22 ′ = γ 22 + p 2k · d 2k (5) p 2k : Photoelastic constant d 2k : Piezoelectric constant
【００１３】式（５）の第２項は負の値として加算され
るため、ＶA はγ22により定まる値に比べ通常３０％程
度の高くなる。電気光学効果は電界による電子の分極を
誘起するものであり応答は極めてはやいが、圧電効果は
電子の分極により原子が移動する効果であるため応答速
度は原子と電子の質量比により決まり数万倍遅い。この
ためスイッチング電源５により１０ｎｓ程度の速度で電
圧を０に変化させた瞬間は電気光学効果により変化を受
けていた偏光変化のみがスイッチされ、光弾性効果によ
る偏光変化の緩和時間はその後数１００ｎｓかかる。Since the second term of the equation (5) is added as a negative value, V A is usually about 30% higher than the value determined by γ 22 . The electro-optic effect induces the polarization of electrons due to the electric field and the response is extremely quick, but the piezoelectric effect is the effect that atoms move due to the polarization of electrons, so the response speed is determined by the mass ratio of atoms to electrons and is tens of thousands of times. slow. Therefore, only the polarization change that has been changed by the electro-optic effect at the moment when the voltage is changed to 0 by the switching power supply 5 at a speed of about 10 ns is switched, and the relaxation time of the polarization change due to the photoelastic effect takes several 100 ns thereafter. ..
【００１４】さらにこの原子が近接していた状態からの
解放は第１の電極３ａと第２の電極３ｂの位置が解放端
となっているため結晶内の原子間の振動（すなわち音
波）を発生させる。この音波の内、２電極間の共振条
件、すなわち２電極間の距離をｄとして、 ｆ＝Ｖｐ・Ｎ／（２・ｄ） （６） Ｎ＝１，２，・・・ ｆ ：共振周波数 Ｖｐ：音波の速度（縦波・横波が２種類それぞれ異な
る） で決まる共振状態で定在波を生じる。これが光弾性効果
により屈折率変化を誘起し通過光の偏光状態を変調す
る。光の通過領域が電気光学結晶１の厚み方向の中心を
通過する場合、この部分が定在波の腹に相当するＮ＝２
Ｍ−１（Ｍは整数）での変調度が著しく大きくなる。こ
の偏光状態の変調により電気光学結晶１通過光は偏光子
９を通過する偏光に垂直な偏光成分が生じ、偏光子９か
らそとに放出される。すなわちレーザ共振器内の損失が
式（６）に従って変調されることになる。縦波と横波の
３種類の音波の速度を〜５０００ｍ／ｓとすると、電極
間の距離を５ｍｍとして変調周波数は５００ｋＨｚ・Ｎ
となる。またＬｉＮｂＯ3 の音波伝搬損失は０．１ｄＢ
／ｃｍ・ＧＨｚ2 程度と小さいため電気光学結晶１の電
極間は音波に対し非常にＱ値の高い共振器となってしま
う。Further, the release from the state in which the atoms are close to each other generates vibration (that is, sound wave) between the atoms in the crystal because the positions of the first electrode 3a and the second electrode 3b are the release ends. Let Of these sound waves, the resonance condition between the two electrodes, that is, the distance between the two electrodes is d, f = Vp · N / (2 · d) (6) N = 1, 2, ... f: Resonance frequency Vp : A standing wave is generated in a resonance state determined by the speed of a sound wave (two different longitudinal and transverse waves). This induces a change in the refractive index due to the photoelastic effect and modulates the polarization state of the passing light. When the light passage region passes through the center of the electro-optic crystal 1 in the thickness direction, this portion corresponds to the antinode of the standing wave N = 2.
The degree of modulation at M-1 (M is an integer) becomes significantly large. Due to this modulation of the polarization state, the light passing through the electro-optic crystal 1 has a polarization component perpendicular to the polarization passing through the polarizer 9, and is emitted from the polarizer 9 to the outside. That is, the loss in the laser resonator is modulated according to the equation (6). When the velocity of three kinds of sound waves of longitudinal wave and transverse wave is up to 5000 m / s, the modulation frequency is 500 kHz · N when the distance between the electrodes is 5 mm.
Becomes Also, the sound wave propagation loss of LiNbO 3 is 0.1 dB.
Since it is as small as about / cm · GHz 2, the resonator between the electrodes of the electro-optic crystal 1 becomes a resonator having a very high Q value for sound waves.
【００１５】スイッチング電源５により電圧をＶA から
０にスイッチングした後にジャイアントパルスはレーザ
媒質８の自然放出光から増大していくため、実際に誘導
放出が急激におこりパルスが生成される（ビルドアッ
プ）までの時間は、レーザ媒質８に蓄積されたエネルギ
ーにより数１００ｎｓ〜数μｓかかる。その後、数ｎｓ
〜数１００ｎｓ程度のジャイアントパルスが生成され
る。このビルドアップ時、ジャイアントパルス生成時
に、図１０のように上記音波の共振によるレーザ共振器
内の過渡的な損失が伴うため、レーザ発振効率は低下し
てしまう。After switching the voltage from V A to 0 by the switching power supply 5, the giant pulse increases from the spontaneous emission light of the laser medium 8, so that stimulated emission actually occurs rapidly and a pulse is generated (build-up). Up to () takes several 100 ns to several μs depending on the energy accumulated in the laser medium 8. Then a few ns
A giant pulse of about several 100 ns is generated. At the time of this build-up and generation of a giant pulse, a transient loss in the laser resonator due to the resonance of the sound wave is accompanied as shown in FIG. 10, and the laser oscillation efficiency is reduced.
【００１６】[0016]
【発明が解決しようとする課題】従来のＱスイッチは以
上のように構成されているので、電気光学結晶に印加す
る電圧のスイッチング時に結晶内に音波が誘起され、こ
の音波が電気光学結晶内で共振し定在波を生じるため、
光弾性効果に起因して偏光状態が変調され、ジャイアン
トパルス生成時に共振器内に過渡的に損失が発生してレ
ーザの発振効率が著しく低下するという問題点があっ
た。Since the conventional Q switch is constructed as described above, a sound wave is induced in the crystal when the voltage applied to the electro-optic crystal is switched, and this sound wave is generated in the electro-optic crystal. Because it resonates and produces a standing wave,
There is a problem in that the polarization state is modulated due to the photoelastic effect, and a transient loss occurs in the resonator when a giant pulse is generated, which significantly reduces the laser oscillation efficiency.
【００１７】この発明は上記のような問題点を解決する
ためになされたもので、電気光学結晶内で発生する音波
の共振を押さえこれにより共振器内の過渡的な損失を低
減して発振効率の改善を行ったＱスイッチを得ることを
目的とする。The present invention has been made to solve the above problems, and suppresses resonance of sound waves generated in the electro-optic crystal, thereby reducing transient loss in the resonator and oscillating efficiency. The object is to obtain a Q switch which has been improved.
【００１８】[0018]
【課題を解決するための手段】第１の発明に係るＱスイ
ッチは、電気光学結晶内で発生する音波の共振を押さえ
るようにしたものであり、以下の要素を有するものであ
る。 （ａ）光を透過させる電気光学部材、（ｂ）上記電気光
学部材に対して電圧を印加する電圧印加手段、（ｃ）上
記電気光学部材内に生ずる音波を抑制する抑制手段。The Q switch according to the first invention is designed to suppress the resonance of sound waves generated in the electro-optic crystal and has the following elements. (A) An electro-optical member that transmits light, (b) a voltage applying unit that applies a voltage to the electro-optical member, and (c) a suppressing unit that suppresses a sound wave generated in the electro-optical member.
【００１９】第２の発明に係るＱスイッチは、電気光学
結晶の電極面のすくなくとも一方に、電気光学結晶と音
響インピーダンスの整合をとって音波拡散手段を設置す
るものであり、以下の要素を有するものである。 （ａ）一対の側面を有する電気光学部材、（ｂ）上記電
気光学部材の一対の側面に対して電圧を印加する電源、
（ｃ）上記電気光学部材の一対の側面の少なくとも一方
の側面に設けられ、上記電源による電圧の切り替えによ
って生ずる音波の進行方向を変更する音波拡散手段。The Q-switch according to the second aspect of the present invention is to install a sound wave diffusing means on at least one of the electrode surfaces of the electro-optic crystal so as to match the acoustic impedance with the electro-optic crystal, and has the following elements. It is a thing. (A) an electro-optical member having a pair of side surfaces, (b) a power supply for applying a voltage to the pair of side surfaces of the electro-optical member,
(C) A sound wave diffusing unit which is provided on at least one side surface of the pair of side surfaces of the electro-optical member and which changes a traveling direction of a sound wave generated by switching the voltage by the power source.
【００２０】第３の発明に係るＱスイッチは、電気光学
結晶の電極面の一方に同じ形状の第２の電気光学結晶を
音響インピーダンスの整合をとって設置するものであ
り、以下の要素を有するものである。 （ａ）形状を同一にした第１と第２の電気光学部材、
（ｂ）上記第１と第２の電気光学部材の間に形成された
共通電極、（ｃ）上記第１と第２の電気光学部材の外側
に形成された一対の個別電極、（ｄ）上記個別電極に同
電圧を印加し、共通電極に個別電極に印加した電圧とは
異なる電圧とを印加する電源。The Q-switch according to the third invention is to install the second electro-optic crystal of the same shape on one of the electrode surfaces of the electro-optic crystal while matching the acoustic impedance, and has the following elements. It is a thing. (A) First and second electro-optical members having the same shape,
(B) a common electrode formed between the first and second electro-optical members, (c) a pair of individual electrodes formed outside the first and second electro-optical members, (d) the above A power supply that applies the same voltage to the individual electrodes and a voltage different from the voltage applied to the individual electrodes to the common electrode.
【００２１】[0021]
【作用】第１の発明においては、抑制手段が電気光学結
晶に発生する音波の定在波を抑制する。In the first invention, the suppressing means suppresses the standing wave of the sound wave generated in the electro-optic crystal.
【００２２】そして、その抑制手段の一例として、第２
の発明では、音波拡散手段が、媒質内で音波の方向をか
え共振を低減する。As an example of the suppressing means, the second
In the invention, the sound wave diffusion means changes the direction of the sound wave in the medium to reduce resonance.
【００２３】さらに、第３の発明では、第２の電気光学
結晶で逆相の音波を発生させ電気光学結晶で発生する音
波を打ち消す。Further, in the third aspect of the invention, the second electro-optic crystal generates a sound wave of opposite phase to cancel the sound wave generated by the electro-optic crystal.
【００２４】[0024]
【実施例】実施例１．図１は第１及び第２の発明の一実
施例によるＱスイッチの構成図である。図において１は
電気光学結晶、３ａ、３ｂは第１及び第２の電極、１０
は対向する面のうち第１の電極３ａとむかう面を第１の
側面２ａと平行な平面としこれに対向する面を第１の側
面２ａに対して角度をもたせた音波拡散手段（抑制手段
の一例）、３１は音波拡散手段１０の第１の電極３ａと
対向する面に作製した反射面、１１は接触層である。EXAMPLES Example 1. FIG. 1 is a configuration diagram of a Q switch according to an embodiment of the first and second inventions. In the figure, 1 is an electro-optic crystal, 3a and 3b are first and second electrodes, and 10
Is a sound wave diffusing means (a suppressing means of the suppressing means) in which the surface facing the first electrode 3a is a plane parallel to the first side surface 2a and the surface facing the first electrode 3a is angled with respect to the first side surface 2a. One example), 31 is a reflective surface formed on the surface of the sound wave diffusing means 10 facing the first electrode 3a, and 11 is a contact layer.
【００２５】音波拡散手段１０は電気光学結晶１と音響
インピーダンスが近い材料で作製される。電気光学結晶
１をＬｉＮｂＯ3 とすると音響インピーダンスは約３０
×１０-5であり、銅、鉄、銀などの金属材料を用いるこ
とでインピーダンス整合がとれ８０％以上の音波の透過
率が得られる。また接触層１１は、インジウムシートや
導電性の接着剤などの材料で音波拡散手段１０と電気光
学結晶１に十分な応力を与えて空気層を残さずに密着す
ることにより数μｍ程度とすることができ、これは音波
の波長に比べて十分小さいため反射や散乱等は無視でき
る。スイッチング電源５により音波拡散手段１０と第２
の電極３ｂに印加する電位差をＶA （Ａ＝λ／４、以下
同様）から０にスイッチングを行った場合に、電気光学
結晶１から発生する音波は電気光学結晶１から音波拡散
手段１０に第１の電極３ａに垂直（矢印Ａの方向）に伝
搬していき、音波拡散手段１０の第１の電極３ａと対向
する面に作製した反射面３１により方向が変化して矢印
Ｂの方向へ折り返される。このためこの反射成分は、第
２の電極３ｂと共振して定在波が生じることがなく光が
伝搬する領域において音波による屈折率変動が低減でき
る。以上のように、この実施例は、電気光学結晶と、上
記電気光学結晶に作製された略平行な一対の側面と、上
記電気光学結晶の端面の一方に入射し、他方から出射す
る光の光軸上に設置された偏光子からなるＱスイッチに
おいて、上記略平行な一対の側面のすくなくとも一方に
音波拡散手段を設けたことを特徴とする。また、上記音
波拡散手段は、音波伝搬電極と、上記音波伝搬電極と上
記電気光学結晶の一対の側面の一方を音響インピーダン
スの整合をとって略全面の接触面で接触させる手段によ
り構成され、上記音波伝搬電極の接触面に対向する面を
接触面に対し傾斜させたことを特徴とする。The sound wave diffusing means 10 is made of a material having an acoustic impedance close to that of the electro-optic crystal 1. If the electro-optic crystal 1 is LiNbO 3 , the acoustic impedance is about 30.
It is × 10 −5 , and impedance matching can be obtained by using a metal material such as copper, iron, and silver, and a sound wave transmittance of 80% or more can be obtained. Further, the contact layer 11 is made of a material such as an indium sheet or a conductive adhesive to give a sufficient stress to the sound wave diffusing means 10 and the electro-optic crystal 1 so as to adhere to each other without leaving an air layer, so that the contact layer 11 has a thickness of several μm. Since this is sufficiently smaller than the wavelength of sound waves, reflection and scattering can be ignored. The switching power supply 5 allows the sound wave diffusing means 10 and the second
The potential difference applied to the electrodes 3b V A when performing switching from 0 (A = λ / 4, hereinafter the same), the waves generated from the electro-optic crystal 1 from the electro-optic crystal 1 into a sound wave spreading means 10 1 propagates in the direction perpendicular to the electrode 3a (in the direction of arrow A), and the direction is changed by the reflecting surface 31 formed on the surface of the sound wave diffusing means 10 that faces the first electrode 3a, and is folded back in the direction of arrow B. Be done. Therefore, this reflection component can reduce the fluctuation in the refractive index due to the sound wave in the region where the light propagates without resonating with the second electrode 3b to generate a standing wave. As described above, in this embodiment, the light emitted from the electro-optic crystal, the pair of substantially parallel side faces formed on the electro-optic crystal, and one of the end faces of the electro-optic crystal is incident on and emitted from the other end. In a Q switch composed of a polarizer installed on an axis, a sound wave diffusing means is provided on at least one of the pair of substantially parallel side surfaces. Further, the sound wave diffusing means is constituted by a sound wave propagating electrode, a means for bringing one of a pair of side surfaces of the sound wave propagating electrode and the electro-optic crystal into contact with each other on substantially the entire contact surface while matching the acoustic impedance, It is characterized in that the surface of the sound wave propagation electrode facing the contact surface is inclined with respect to the contact surface.
【００２６】実施例２．なお、上記実施例１では、音波
拡散手段１０は第１の電極３ａと音響インピーダンス整
合をとって設置したが、図２に示すように、２つの音波
拡散手段１０ａ、１０ｂを第１の電極３ａ、第２の電極
３ｂとそれぞれ音響インピーダンス整合をとって設置す
ればさらに高い屈折率変動の低減が可能である。Example 2. In the first embodiment, the sound wave diffusing means 10 was installed with acoustic impedance matching with the first electrode 3a. However, as shown in FIG. 2, the two sound wave diffusing means 10a and 10b are installed in the first electrode 3a. , And the second electrodes 3b and acoustic impedance matching, respectively, can be installed to further reduce the refractive index fluctuation.
【００２７】実施例３．また、上記実施例１では、第１
の電極３ａに接触層１１を密着させたが、第１の電極３
ａを作製せず、第１の側面２ａに直接接触層１１を密着
させても同様の効果が得られる。Example 3. In addition, in the first embodiment, the first
The contact layer 11 was adhered to the electrode 3a of the first electrode 3a.
Even if the contact layer 11 is directly adhered to the first side face 2a without forming a, the same effect can be obtained.
【００２８】実施例４．また、上記実施例１では、便利
のため音波拡散手段１０として金属を用いこれを電極と
して用いたが音響インピーダンズの整合したものとして
例えば電気光学結晶１と等しい材料を用い第１の電極３
ａ、第２の電極３ｂにスイッチング電圧を与えても同様
の効果が得られる。Example 4. In the first embodiment, a metal is used as the sound wave diffusing means 10 for convenience, and this is used as an electrode. However, as a material with matching acoustic impedance, for example, the same material as the electro-optic crystal 1 is used and the first electrode 3 is used.
Even if a switching voltage is applied to a and the second electrode 3b, the same effect can be obtained.
【００２９】実施例５．また、上記実施例１では、光軸
方向に傾きをもった反斜面をもった音波拡散手段１０を
用いてＱスイッチを構成したが、図３に示すように、光
軸と垂直方向に傾きをもった反斜面をもった音波拡散手
段１０ｃを用いても同様の効果が得られる。Example 5. Further, in the first embodiment, the Q switch is configured by using the sound wave diffusing means 10 having the anti-slope inclined in the optical axis direction. However, as shown in FIG. 3, the Q switch is inclined in the direction perpendicular to the optical axis. The same effect can be obtained by using the sound wave diffusing means 10c having an inclined surface.
【００３０】実施例６．また、上記実施例１では第１の
電極３ａに対して傾きをもった反斜面をもつ音波拡散手
段１０ｄを用いてＱスイッチを構成したが、図４に示す
ように散乱面を設けても同様の効果が実現できる。Example 6. Further, in the first embodiment, the Q switch is configured by using the sound wave diffusing means 10d having an anti-slope that is inclined with respect to the first electrode 3a, but the same applies even if a scattering surface is provided as shown in FIG. The effect of can be realized.
【００３１】以上のように、この実施例は、上記音波拡
散手段が、音波伝搬電極と、上記音波伝搬電極と上記電
気光学結晶の一対の側面の一方とを音響インピーダンス
の整合をとって略全面の接触面で接触させる手段により
構成され、上記音波伝搬電極の接触面に対向する面に音
波に対する拡散面が形成されていることを特徴とする。As described above, in this embodiment, the sound wave diffusing means makes the sound wave propagating electrode, and the sound wave propagating electrode and one of the pair of side surfaces of the electro-optic crystal, have substantially the same acoustic impedance. Of the sound wave propagating electrode, and a diffusion surface for the sound wave is formed on the surface of the sound wave propagating electrode facing the contact surface.
【００３２】実施例７．また、上記実施例１では第１の
電極３ａに対して傾きをもった反射面をもつ音波拡散手
段１０を用いてＱスイッチを構成したが、図５に示すよ
うに回折格子をもうけた音波拡散手段１０ｅを用いても
同様の効果が実現できる。すなわち、この実施例は、上
記音波拡散手段が、音波伝搬電極と、上記音波伝搬電極
と上記電気光学結晶の一対の側面の一方を音響インピー
ダンスの整合をとって略全面の接触面で接触させる手段
により構成され、上記音波伝搬電極の接触面に対向する
面に音波に対する反射型回折格子を形成したことを特徴
とする。Example 7. Further, in the first embodiment, the Q switch is constructed by using the sound wave diffusing means 10 having the reflecting surface inclined with respect to the first electrode 3a. However, as shown in FIG. The same effect can be achieved by using the means 10e. That is, in this embodiment, the means for causing the sound wave diffusing means to bring the sound wave propagating electrode into contact with one of the pair of side surfaces of the sound wave propagating electrode and the electro-optic crystal at substantially the entire contact surface while matching the acoustic impedance. And a reflective diffraction grating for sound waves is formed on a surface of the sound wave propagating electrode facing the contact surface.
【００３３】実施例８．上記実施例２では、同種の音波
拡散手段１０ａ、１０ｂを用いて、Ｑスイッチを構成し
たが、前述したような異種の音波拡散手段１０、１０
ｃ、１０ｄ、１０ｅ等を組みあわせても同様の効果が期
待できる。Example 8. In the second embodiment, the Q switch is configured by using the same kind of sound wave diffusing means 10a and 10b. However, different kinds of sound wave diffusing means 10 and 10 as described above are used.
Similar effects can be expected by combining c, 10d, 10e and the like.
【００３４】実施例９．図６は第１及び第３の発明の一
実施例によるＱスイッチの構成図である。図において１
３は第１の電気光学結晶、１６は第２の電気光学結晶、
１４ａ、１４ｂは第１の電気光学結晶１３に略平行に作
製された一対の第１側面、１５ａ、１５ｂは一対の第１
側面１４ａ、１４ｂに略全面に形成された一対の第１電
極、１７ａ、１７ｂは第２の電気光学結晶１６に略平行
に作製された一対の第２側面、１８ａ、１８ｂは一対の
第１側面１７ａ、１７ｂに略全面に形成された一対の第
２電極、１９は共通電極、２０ａは第１電極１５ｂと共
通電極１９の間に空気層なく接触された第１の接触層、
２０ｂは第２電極１７ａと共通電極１９の間に空気層な
く接触された第２の接触層、スイッチング電源５は第１
電極１５ａと第２電極１８ｂに共通な電位を与え、共通
電極１９に異なる電位を与え、電位差をＶAから０に変
化させる。Example 9. FIG. 6 is a configuration diagram of a Q switch according to an embodiment of the first and third inventions. 1 in the figure
3 is the first electro-optic crystal, 16 is the second electro-optic crystal,
Reference numerals 14a and 14b denote a pair of first side surfaces formed substantially parallel to the first electro-optic crystal 13, and 15a and 15b denote a pair of first side surfaces.
A pair of first electrodes 17a, 17b formed on substantially the entire side surfaces 14a, 14b are a pair of second side surfaces made substantially parallel to the second electro-optic crystal 16, and a pair of first side surfaces 18a, 18b are a pair of first side surfaces. A pair of second electrodes formed on substantially the entire surfaces of 17a and 17b, 19 is a common electrode, 20a is a first contact layer which is in contact between the first electrode 15b and the common electrode 19 without an air layer,
20b is a second contact layer in contact between the second electrode 17a and the common electrode 19 without an air layer, and the switching power supply 5 is the first contact layer.
A common potential is applied to the electrode 15a and the second electrode 18b, and a different potential is applied to the common electrode 19 to change the potential difference from V A to 0.
【００３５】第１の電気光学結晶１３と第２の電気光学
結晶１６は結晶軸、電極、厚みを一致させてある。共通
電極１９は厚み１００μｍ以下の金属薄膜であり、第１
の接触層２０ａ、第２の接触層２０ｂはＩｎ薄膜や導電
性接着材などを第１の電気光学結晶１３、共通電極、第
２の電気光学結晶１６の間に挿入し圧力を加えて接触さ
せて作製する。スイッチング電源５により共通電極１９
の電位と、第１電極１５ａまたは第２電極１８ｂに与え
る電位をスイッチングすると第１の電気光学結晶１３ま
たは第２の電気光学結晶１６に音波が発生する。発生し
たる音波は共通電極１９を介して対向する結晶にむけて
伝搬する。このとき、両結晶間の音響インピーダンスが
十分とれているので定在波は図７に示すように立ちその
周波数は、式（６）と同様に両結晶の厚みをｄとして、
共通電極１９、接触層２０の厚みを無視すると式（７）
となる。The first electro-optic crystal 13 and the second electro-optic crystal 16 have the same crystal axis, electrodes and thickness. The common electrode 19 is a metal thin film having a thickness of 100 μm or less.
The contact layer 20a and the second contact layer 20b are made by inserting an In thin film, a conductive adhesive, or the like between the first electro-optical crystal 13, the common electrode, and the second electro-optical crystal 16 to bring them into contact with each other. To make. Common electrode 19 by switching power supply 5
A sound wave is generated in the first electro-optic crystal 13 or the second electro-optic crystal 16 by switching the potential of 1 and the potential applied to the first electrode 15a or the second electrode 18b. The generated sound wave propagates toward the opposing crystal via the common electrode 19. At this time, since the acoustic impedance between both crystals is sufficient, the standing wave rises as shown in FIG. 7, and its frequency is as shown in equation (6), where the thickness of both crystals is d,
Ignoring the thicknesses of the common electrode 19 and the contact layer 20, formula (7)
Becomes
【００３６】 ｆ＝Ｖｐ・Ｎ／（４・ｄ） （７）F = Vp · N / (4 · d) (7)
【００３７】ここで第１電極１５ａと第２電極１８ｂに
同電位を与えスイッチングすると第１の電気光学結晶１
３で発生した音波の位相と第２の電気光学結晶１６で発
生する音波の位相は逆相となり定在波は打ち消しあう
（抑制手段の一例）。これにより第１の電気光学結晶１
３を伝搬する光は偏光の変調度が低減される。When the same potential is applied to the first electrode 15a and the second electrode 18b and switching is performed, the first electro-optic crystal 1
The phase of the sound wave generated in 3 and the phase of the sound wave generated in the second electro-optic crystal 16 are opposite to each other, and the standing waves cancel each other (an example of suppressing means). Thereby, the first electro-optic crystal 1
The degree of polarization modulation of the light propagating through 3 is reduced.
【００３８】以上のように、この実施例は、第１の電気
光学結晶と、上記第１の電気光学結晶に作製された略平
行な一対の第１側面と、上記第１の電気光学結晶の端面
の一方に入射し、他方から出射する光の光軸上に設置さ
れた偏光子からなるＱスイッチにおいて、上記第１の電
気光学結晶と結晶軸および形状を同一とした第２の電気
光学結晶と、上記第２の電気光学結晶に作製された略平
行な一対の第２側面と、上記一対の第１側面の一方と上
記一対の第２側面の間に設置された共通電極とにより構
成されることを特徴とする。As described above, in this embodiment, the first electro-optic crystal, the pair of substantially parallel first side faces formed on the first electro-optic crystal, and the first electro-optic crystal are formed. A second electro-optic crystal having the same crystal axis and shape as those of the first electro-optic crystal described above, in a Q switch comprising a polarizer installed on the optical axis of light entering one of the end faces and exiting from the other. And a pair of substantially parallel second side faces formed on the second electro-optic crystal, and a common electrode provided between one of the pair of first side faces and the pair of second side faces. It is characterized by
【００３９】実施例１０．また、上記実施例では、便利
のため第１電極１５ｂ、第２電極１８ａを第１の接触層
２０ａ、第２の接触層２０ｂを介して共通電極１９に密
着させたが、電極１５ｂ、１８ａを作製せず、第１側面
１４ｂ、第２側面１７ａに直接第１の接触層２０ａ、第
２の接触層２０ｂを密着させても同様の効果が得られ
る。Example 10. Further, in the above embodiment, the first electrode 15b and the second electrode 18a are adhered to the common electrode 19 via the first contact layer 20a and the second contact layer 20b for the sake of convenience. The same effect can be obtained by directly adhering the first contact layer 20a and the second contact layer 20b to the first side surface 14b and the second side surface 17a without making them.
【００４０】実施例１１．なお、上記実施例１〜１０で
は、音波を電気光学結晶１内の原子間の振動として説明
したきたが、原子間の振動は、レーザ発振効率を低下さ
せてしまう信号の一例であり、ここでいう音波とは、原
子間の振動のみならず、外力、熱、摩擦等のその他の要
因によってレーザ発振効率を低下させてしまうその他の
信号も含むものとし、この発明は、これらその他の要因
によって生ずる音波に対しても有効に作用するものであ
る。Example 11. In the first to tenth embodiments, the sound wave is described as the vibration between atoms in the electro-optic crystal 1, but the vibration between atoms is an example of a signal that reduces the laser oscillation efficiency. The so-called sound wave includes not only the vibration between atoms but also other signals that reduce the laser oscillation efficiency due to other factors such as external force, heat, friction, etc. It also works effectively against.
【００４１】[0041]
【発明の効果】第１の発明によれば、抑制手段によりＱ
スイッチング時に電気光学部材の内で発生する音波の定
在波を抑えることとしたので、偏光の変調を低減でき、
これによりこのＱスイッチを用いれば高効率のＱスイッ
チレーザを実現できる効果がある。According to the first aspect of the present invention, the Q is suppressed by the suppressing means.
Since the standing wave of the sound wave generated in the electro-optical member at the time of switching is suppressed, the polarization modulation can be reduced,
As a result, the use of this Q switch has the effect of realizing a highly efficient Q switch laser.
【００４２】第２の発明によれば、Ｑスイッチング時に
電気光学部材の内で発生する音波の光路を音波拡散手段
により変化させ、定在波を抑えることとしたので、偏光
の変調を低減でき、これによりこのＱスイッチを用いれ
ば高効率のＱスイッチレーザを実現できる効果がある。According to the second aspect of the invention, since the optical path of the sound wave generated in the electro-optical member at the time of Q switching is changed by the sound wave diffusing means to suppress the standing wave, polarization modulation can be reduced, As a result, the use of this Q switch has the effect of realizing a highly efficient Q switch laser.
【００４３】第３の発明によれば、Ｑスイッチング時に
電気光学結晶の内で発生する音波を、音響インピーダン
スを整合させた等価な電気光学結晶を同条件で駆動する
ことにより発生する音波により打ち消すことで定在波を
抑え、偏光の変調を低減でき、これによりこのＱスイッ
チを用いれば高効率のＱスイッチレーザを実現できる効
果がある。According to the third aspect of the invention, the sound wave generated in the electro-optic crystal at the time of Q switching is canceled by the sound wave generated by driving the equivalent electro-optic crystal whose acoustic impedance is matched under the same conditions. Thus, the standing wave can be suppressed and the polarization modulation can be reduced. Therefore, if this Q switch is used, a highly efficient Q switch laser can be realized.
【図１】第１、第２の発明の一実施例によるＱスイッチ
の構成図である。FIG. 1 is a configuration diagram of a Q switch according to an embodiment of the first and second inventions.
【図２】第１、第２の発明の他の一実施例によるＱスイ
ッチの構成図である。FIG. 2 is a configuration diagram of a Q switch according to another embodiment of the first and second inventions.
【図３】第１、第２の発明の他の一実施例によるＱスイ
ッチの構成図である。FIG. 3 is a configuration diagram of a Q switch according to another embodiment of the first and second inventions.
【図４】第１、第２の発明の他の一実施例によるＱスイ
ッチの構成図である。FIG. 4 is a configuration diagram of a Q switch according to another embodiment of the first and second inventions.
【図５】第１、第２の発明の他の一実施例によるＱスイ
ッチの構成図である。FIG. 5 is a configuration diagram of a Q switch according to another embodiment of the first and second inventions.
【図６】第１、第３の発明の一実施例によるＱスイッチ
の構成図である。FIG. 6 is a configuration diagram of a Q switch according to an embodiment of the first and third inventions.
【図７】第１、第３の発明の一実施例によるＱスイッチ
の効果の説明図ある。FIG. 7 is an explanatory diagram of an effect of a Q switch according to an embodiment of the first and third inventions.
【図８】従来のＱスイッチの構成図である。FIG. 8 is a configuration diagram of a conventional Q switch.
【図９】従来のＱスイッチレーザの構成図である。FIG. 9 is a block diagram of a conventional Q-switched laser.
【図１０】従来のＱスイッチレーザの課題の説明図であ
る。FIG. 10 is an explanatory diagram of a problem of a conventional Q-switched laser.
１ 電気光学結晶 ２ａ，２ｂ 側面 ３ａ，３ｂ 電極 ４ａ，４ｂ 電圧印加線 ５ スイッチング電源 ６ 高反射鏡 ７ 出力鏡 ８ レーザ媒質 ９ 偏光子 １０ 音波伝搬電極 １１ 接触層 １３ 第１の電気光学結晶 １４ａ，１４ｂ 第１側面 １５ａ，１５ｂ 第１電極 １６ 第２の電気光学結晶 １７ａ，１７ｂ 第２側面 １８ａ，１８ｂ 第２電極 １９ 共通電極 ２０ａ，２０ｂ 接触層 ３０ａ，３０ｂ 端面 DESCRIPTION OF SYMBOLS 1 Electro-optic crystal 2a, 2b Side surface 3a, 3b Electrode 4a, 4b Voltage application line 5 Switching power supply 6 High-reflecting mirror 7 Output mirror 8 Laser medium 9 Polarizer 10 Sound wave propagation electrode 11 Contact layer 13 First electro-optic crystal 14a, 14b 1st side surface 15a, 15b 1st electrode 16 2nd electro-optic crystal 17a, 17b 2nd side surface 18a, 18b 2nd electrode 19 Common electrode 20a, 20b Contact layer 30a, 30b End surface
Claims (3)
加手段、 （ｃ）上記電気光学部材内に生ずる音波を抑制する抑制
手段。1. A Q switch having the following elements: (a) an electro-optical member that transmits light, (b) a voltage applying unit that applies a voltage to the electro-optical member, and (c) an electro-optical member. Suppressing means for suppressing the generated sound waves.
加する電源、 （ｃ）上記電気光学部材の一対の側面の少なくとも一方
の側面に設けられ、上記電源による電圧の切り替えによ
って生ずる音波の進行方向を変更する音波拡散手段。2. A Q switch having the following elements: (a) an electro-optical member having a pair of side surfaces, (b) a power source for applying a voltage to the pair of side surfaces of the electro-optical member, and (c) the electro-optical member. A sound wave diffusing unit which is provided on at least one side surface of the pair of side surfaces of the member and changes the traveling direction of a sound wave generated by switching the voltage by the power source.
共通電極、 （ｃ）上記第１と第２の電気光学部材の外側に形成され
た一対の個別電極、 （ｄ）上記個別電極に同電圧を印加し、共通電極に個別
電極に印加した電圧とは異なる電圧とを印加する電源。3. A Q switch having the following elements: (a) first and second electro-optical members having the same shape, (b) a common formed between the first and second electro-optical members. Electrodes, (c) a pair of individual electrodes formed outside the first and second electro-optical members, (d) the same voltage applied to the individual electrodes, and the voltage applied to the individual electrodes to the common electrode A power supply that applies different voltages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10653392A JP2910399B2 (en) | 1992-04-24 | 1992-04-24 | Q switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10653392A JP2910399B2 (en) | 1992-04-24 | 1992-04-24 | Q switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05299752A true JPH05299752A (en) | 1993-11-12 |
| JP2910399B2 JP2910399B2 (en) | 1999-06-23 |
Family
ID=14436035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10653392A Expired - Fee Related JP2910399B2 (en) | 1992-04-24 | 1992-04-24 | Q switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2910399B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151777A (en) * | 2000-11-10 | 2002-05-24 | Keyence Corp | Laser oscillator and its laser pulse control method |
| JPWO2017169452A1 (en) * | 2016-03-30 | 2018-08-09 | 富士フイルム株式会社 | Laser apparatus and photoacoustic measuring apparatus |
| JPWO2017169336A1 (en) * | 2016-03-30 | 2018-09-13 | 富士フイルム株式会社 | Laser apparatus and photoacoustic measuring apparatus |
-
1992
- 1992-04-24 JP JP10653392A patent/JP2910399B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002151777A (en) * | 2000-11-10 | 2002-05-24 | Keyence Corp | Laser oscillator and its laser pulse control method |
| JPWO2017169452A1 (en) * | 2016-03-30 | 2018-08-09 | 富士フイルム株式会社 | Laser apparatus and photoacoustic measuring apparatus |
| JPWO2017169336A1 (en) * | 2016-03-30 | 2018-09-13 | 富士フイルム株式会社 | Laser apparatus and photoacoustic measuring apparatus |
| US11291372B2 (en) | 2016-03-30 | 2022-04-05 | Fujifilm Corporation | Laser device and photoacoustic measurement apparatus |
| US11324402B2 (en) | 2016-03-30 | 2022-05-10 | Fujifilm Corporation | Laser device and photoacoustic measurement apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2910399B2 (en) | 1999-06-23 |
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