JPH05299379A - Temperature control device and method thereof - Google Patents

Temperature control device and method thereof

Info

Publication number
JPH05299379A
JPH05299379A JP10094392A JP10094392A JPH05299379A JP H05299379 A JPH05299379 A JP H05299379A JP 10094392 A JP10094392 A JP 10094392A JP 10094392 A JP10094392 A JP 10094392A JP H05299379 A JPH05299379 A JP H05299379A
Authority
JP
Japan
Prior art keywords
refrigerant
pressure
valve
control valve
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10094392A
Other languages
Japanese (ja)
Inventor
Hidenori Sekiya
秀徳 関谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10094392A priority Critical patent/JPH05299379A/en
Publication of JPH05299379A publication Critical patent/JPH05299379A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To quicken a refrigerant feed rate to shorten the time to be elapsed before the pressure of a refrigerant reaches a prescribed set value as well as to prevent generation of overshoot. CONSTITUTION:A support stage 7 to support a wafer 9 is provided in a vacuum container 2 of a plasma treating device 1 and a space 7a is formed by a sealing material 8. A high-frequency voltage is applied between the stage 7 and an electrode 6 to produce plasma and the wafer 9 is subjected to processing with this plasma. A temperature control device 15 consists of a refrigerant feed pipe 16, a control valve 17, a refrigerant piping 18, a pressure indicator 20, a control part 22 and a refrigerant discharge pipe 26. The control part 22 compares a pressure detected by the pressure indicator 20 with a pressure corresponding to a previously set temperature to control the amount of opening and shutting of the valve 17. The piping 18 between the valve 17 and the pressure indicator 20 is provided with a leak piping 30 provided with a flow rate limiting valve 31 and a flow path on-off valve 32.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、プラズマ処理により真
空中でシリコンウェハ等を加工する際の温度調整装置に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature adjusting device for processing a silicon wafer or the like in a vacuum by plasma processing.

【0002】[0002]

【従来の技術】一般に、この種の温度調整装置を搭載し
たプラズマ処理装置1は、図3に示すように、チャンバ
ー壁で囲まれた真空容器1で構成された空間3を処理空
間として、真空容器1の上部に反応ガス供給口4が、ま
た側部に反応ガス排気口5がそれぞれ設けられており、
内部には上面部から突出した電極6が、また底面部から
突出した支持台7が設けられている。支持台7の上端面
には対象物であるシリコンウェハ9と支持台7との間に
冷媒空間7aを形成するシール材8が取付けられてお
り、支持台7と電極6との間にギャップ部3aが形成さ
れている。支持台7の中央部には前記冷媒空間7aに冷
媒を導入する冷媒導入穴10が設けられており、10a
は冷媒導入穴10の外部配管接続口である。
2. Description of the Related Art Generally, as shown in FIG. 3, a plasma processing apparatus 1 equipped with a temperature control device of this type is vacuumed with a space 3 defined by a vacuum chamber 1 surrounded by chamber walls as a processing space. A reaction gas supply port 4 is provided in the upper part of the container 1, and a reaction gas exhaust port 5 is provided in the side part,
Inside, an electrode 6 protruding from the top surface portion and a support base 7 protruding from the bottom surface portion are provided. A seal material 8 that forms a coolant space 7 a between the silicon wafer 9 as an object and the support base 7 is attached to the upper end surface of the support base 7, and a gap portion is provided between the support base 7 and the electrode 6. 3a is formed. A coolant introduction hole 10 for introducing a coolant into the coolant space 7a is provided at the center of the support base 7.
Is an external pipe connection port of the refrigerant introduction hole 10.

【0003】温度調整装置15は、図示しない冷媒供給
源に連通した冷媒供給配管16と、冷媒供給源からの冷
媒供給量を制御する制御バルブ17と、この制御バルブ
17と前記外部配管接続口10aとを連通する冷媒配管
18と、この冷媒配管18の途中に設置されて冷媒の供
給圧力を検出する圧力計20と、この圧力計20によっ
て検出した圧力とあらかじめ設定した設定温度に対応し
た圧力とを比較して前記制御バルブ17の開閉量を制御
する制御部22と、冷媒配管18内の冷媒をすべて外部
に放出する冷媒放出バルブ25と、この冷媒放出バルブ
25と連通した冷媒放出配管26とから構成される。
The temperature adjusting device 15 includes a refrigerant supply pipe 16 communicating with a refrigerant supply source (not shown), a control valve 17 for controlling the amount of refrigerant supplied from the refrigerant supply source, the control valve 17 and the external pipe connection port 10a. And a pressure gauge 20 installed in the middle of the refrigerant pipe 18 for detecting the supply pressure of the refrigerant, and a pressure detected by the pressure gauge 20 and a pressure corresponding to a preset temperature. And a control unit 22 for controlling the opening / closing amount of the control valve 17, a refrigerant discharge valve 25 for discharging all the refrigerant in the refrigerant pipe 18 to the outside, and a refrigerant discharge pipe 26 communicating with the refrigerant discharge valve 25. Composed of.

【0004】以上の構成において、以下動作を説明す
る。まず、真空容器2内の空間3を反応ガス排気口5か
ら図示しない真空ポンプにより排気し、反応ガス供給口
4から所定の反応ガスを真空空間3に導入すると共に、
支持台7と電極6との間に高周波電圧を印可してプラズ
マを生成し、このプラズマによりシリコンウェハ9を加
工する。このとき、通常ウェハ9表面はプラズマにさら
されて加熱される。加熱によるウェハ9の損焼やウェハ
表面での不必要な反応を抑制するため、ウェハ9裏面の
空間7aには冷媒が導入され、ウェハ9の熱を支持台7
に伝達してウェハ9の温度を制御している。
The operation of the above configuration will be described below. First, the space 3 in the vacuum container 2 is evacuated from the reaction gas exhaust port 5 by a vacuum pump (not shown), and a predetermined reaction gas is introduced into the vacuum space 3 from the reaction gas supply port 4,
A high frequency voltage is applied between the support 7 and the electrode 6 to generate plasma, and the silicon wafer 9 is processed by this plasma. At this time, the surface of the wafer 9 is usually exposed to plasma and heated. In order to suppress burnout of the wafer 9 due to heating and unnecessary reactions on the wafer surface, a coolant is introduced into the space 7a on the back surface of the wafer 9 to transfer the heat of the wafer 9 to the support base 7
To control the temperature of the wafer 9.

【0005】通常、冷媒はHe等の気体が用いられ、伝
熱量を一定に保つために、圧力制御がなされる。圧力制
御は、冷媒配管18の途中に設置した圧力計20により
冷媒導入穴10へのガスの圧力を検出し、この圧力信号
21とあらかじめ設定した温度に対応した圧力とを制御
部22において比較して圧力差に応じて制御バルブ17
に駆動信号23を送出し、制御バルブ17の開閉量を制
御して圧力計20の支持値を設定値に一致するようにし
ている。ウェハ処理が終了した時点で、冷媒放出バルブ
25を開き、冷媒放出配管26から冷媒配管18内の冷
媒を放出する。
Usually, a gas such as He is used as the refrigerant, and the pressure is controlled in order to keep the amount of heat transfer constant. The pressure control detects the pressure of the gas to the refrigerant introduction hole 10 by the pressure gauge 20 installed in the middle of the refrigerant pipe 18, and compares the pressure signal 21 with the pressure corresponding to the preset temperature in the control unit 22. Control valve 17 according to the pressure difference
A driving signal 23 is sent to the control valve 17 to control the opening / closing amount of the control valve 17 so that the support value of the pressure gauge 20 matches the set value. When the wafer processing is completed, the refrigerant discharge valve 25 is opened, and the refrigerant in the refrigerant pipe 18 is discharged from the refrigerant discharge pipe 26.

【0006】[0006]

【発明が解決しようとする課題】しかるに、上述した従
来の温度調整装置では、制御バルブ17を開き冷媒を供
給すると、図4に示すように制御部22で設定した設定
値よりも冷媒圧力がオーバーシュートして、このオーバ
ーシュートが保持されるため、冷媒圧力が設定値が越え
たままとなる。このオーバーシュートは、特に、冷媒供
給の速度を早くすると顕著となり、このため冷媒供給の
速度を遅らす必要があり、冷媒圧力が所定の設定値に達
するのに時間を要するといった欠点があった。
However, in the above-mentioned conventional temperature adjusting device, when the control valve 17 is opened and the refrigerant is supplied, the refrigerant pressure exceeds the set value set by the control unit 22 as shown in FIG. Since the overshoot is maintained by the shoot, the refrigerant pressure remains above the set value. This overshoot becomes particularly noticeable when the refrigerant supply speed is increased, and therefore the refrigerant supply speed needs to be slowed down, and there is a drawback that it takes time for the refrigerant pressure to reach a predetermined set value.

【0007】したがって、本発明は上記したような従来
の欠点に鑑みてなされたものであり、その目的とすると
ころは、冷媒供給の速度を早くして冷媒圧力が所定の設
定値まで達するまでの時間を短縮すると共に、オーバー
シュートの発生を防止した温度調整装置および温度調整
方法を提供することにある。
Therefore, the present invention has been made in view of the above-mentioned conventional drawbacks, and an object of the present invention is to increase the refrigerant supply speed until the refrigerant pressure reaches a predetermined set value. An object of the present invention is to provide a temperature adjusting device and a temperature adjusting method that reduce the time and prevent the occurrence of overshoot.

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に、本発明に係る温度調整装置は、対象物とこの対象物
を支持する支持台との間に冷媒を供給し、冷媒の供給圧
力を可変制御することによって対象物から支持台への伝
熱量を変化させて対象物の温度制御を行う温度調整装置
であって、冷媒を供給する冷媒供給源と、この冷媒供給
源からの冷媒供給量を制御する制御バルブと、この制御
バルブと対象物との間に設置されて冷媒の供給圧力を検
出する圧力検出手段と、この圧力検出手段によって検出
した圧力と設定温度に対応した圧力とを比較して前記制
御バルブの開閉量を制御する制御部と、前記制御バルブ
と圧力検出手段との間に配設されたリーク配管とからな
るものである。また、本発明に係る温度調整方法は、対
象物とこの対象物を支持する支持台との間に冷媒を供給
し、冷媒の供給圧力を可変制御することによって対象物
から支持台への伝熱量を変化させて対象物の温度制御を
行う温度調整方法であって、冷媒供給源からの冷媒供給
量を制御バルブで制御し、供給される冷媒の圧力を検出
してこの検出圧力と設定温度に対応した圧力とを比較し
て前記制御バルブの開閉量を制御すると共に、供給され
た冷媒の一部を外部に放出させたものである。
In order to achieve this object, a temperature adjusting apparatus according to the present invention supplies a refrigerant between an object and a support table that supports the object, and supplies the refrigerant with a pressure. A temperature adjusting device that controls the temperature of an object by changing the amount of heat transfer from the object to the support table by variably controlling the refrigerant supply source for supplying a refrigerant, and the refrigerant supply from the refrigerant supply source. A control valve for controlling the amount, a pressure detection means installed between the control valve and the object for detecting the supply pressure of the refrigerant, and a pressure detected by the pressure detection means and a pressure corresponding to the set temperature. In comparison, it comprises a control unit for controlling the opening / closing amount of the control valve, and a leak pipe arranged between the control valve and the pressure detecting means. Further, the temperature adjusting method according to the present invention supplies a refrigerant between an object and a support table that supports the object, and variably controls the supply pressure of the refrigerant to transfer heat from the object to the support table. Is a temperature adjusting method for controlling the temperature of an object by changing the temperature of the object, the refrigerant supply amount from the refrigerant supply source is controlled by the control valve, the pressure of the supplied refrigerant is detected, and the detected pressure and the set temperature are set. The opening / closing amount of the control valve is controlled by comparing with a corresponding pressure, and a part of the supplied refrigerant is discharged to the outside.

【0009】[0009]

【作用】本発明においては、制御バルブから供給された
冷媒圧力のオーバーシュート分は、リーク配管から外部
に放出される。
In the present invention, the overshoot of the refrigerant pressure supplied from the control valve is discharged to the outside from the leak pipe.

【0010】[0010]

【実施例】以下、本発明に係る温度調整装置および温度
調整方法の一実施例を図に基づいて説明する。図1は本
発明に係る温度調整装置の側断面図である。同図におい
て、従来技術と同一の構成については同一の符号を付
し、詳細な説明は省略する。本発明の特徴とするところ
は、制御バルブ17と圧力計20との間の冷媒配管18
にリーク配管30を配設した点にある。すなわち、リー
ク配管30には、冷媒配管18内の冷媒の一部をリーク
配管30に導く流量制限用バルブ31と流路開閉バルブ
32とが設置されて冷媒放出配管26に連通されてい
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a temperature adjusting device and a temperature adjusting method according to the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view of a temperature adjusting device according to the present invention. In the figure, the same components as those of the conventional technique are designated by the same reference numerals, and detailed description thereof will be omitted. A feature of the present invention is that the refrigerant pipe 18 between the control valve 17 and the pressure gauge 20 is provided.
The leak pipe 30 is arranged at the point. That is, the leak pipe 30 is provided with a flow rate restricting valve 31 and a flow path opening / closing valve 32 that guide a part of the refrigerant in the refrigerant pipe 18 to the leak pipe 30, and are connected to the refrigerant discharge pipe 26.

【0011】本発明に係る温度調整装置は、以上のよう
な構成をしており、以下動作を説明する。まず、制御バ
ルブ17を開き圧力制御を開始すると同時に、流路開閉
バルブ32を開く。制御バルブ17から供給される冷媒
は、ウェハ9の裏面空間7aに溜められると共に、一部
は流路制限バルブ31および流路開閉バルブ32を通っ
て外部に排出される。
The temperature adjusting device according to the present invention has the above-mentioned structure, and its operation will be described below. First, the control valve 17 is opened to start pressure control, and at the same time, the flow path opening / closing valve 32 is opened. The coolant supplied from the control valve 17 is stored in the back surface space 7 a of the wafer 9 and a part of the coolant is discharged to the outside through the flow passage restriction valve 31 and the flow passage opening / closing valve 32.

【0012】すなわち、図2に示すように、オーバーシ
ュートする分の冷媒圧力は、リーク配管30から外部に
放出されるため、冷媒配管18からウェハ9の裏面空間
7aに供給される冷媒圧力は、オーバーシュート分が是
正されて制御部22で設定された設定値に保持される。
しかも、制御バルブ17からの冷媒供給速度を早めたと
きには、リーク配管30から外部に放出される冷媒の量
がその分増えるため、オーバーシュートの是正時間は冷
媒供給速度に関係なくほぼ一定に行われ、このため、冷
媒供給の速度を早くして冷媒圧力を所定の設定値まで達
するまでの時間を短縮することが可能となる。
That is, as shown in FIG. 2, since the refrigerant pressure for the overshoot is discharged from the leak pipe 30 to the outside, the refrigerant pressure supplied from the refrigerant pipe 18 to the back surface space 7a of the wafer 9 is The overshoot amount is corrected and held at the set value set by the control unit 22.
Moreover, when the refrigerant supply speed from the control valve 17 is increased, the amount of the refrigerant discharged from the leak pipe 30 to the outside increases accordingly, so that the overshoot correction time is almost constant regardless of the refrigerant supply speed. Therefore, it is possible to increase the refrigerant supply speed and shorten the time until the refrigerant pressure reaches the predetermined set value.

【0013】[0013]

【発明の効果】以上説明したように本発明によれば、冷
媒を冷媒配管に供給する制御バルブと圧力検出手段との
間にリーク配管を配設し、常時冷媒の一部を外部に排出
するようにしたので、制御バルブでの冷媒供給量を増や
して高速で圧力を上昇させてもオーバーシュート分が是
正されて冷媒圧力を設定値に保持することができ、この
ため所定の設定値まで冷媒圧力を到達させる時間を短縮
することができると共に、常に設定圧力が保持される。
As described above, according to the present invention, the leak pipe is arranged between the control valve for supplying the refrigerant to the refrigerant pipe and the pressure detecting means to constantly discharge a part of the refrigerant to the outside. Therefore, even if the refrigerant supply amount in the control valve is increased and the pressure is increased at high speed, the overshoot amount is corrected and the refrigerant pressure can be held at the set value. The time required to reach the pressure can be shortened and the set pressure is always maintained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る温度調整装置の側断面図である。FIG. 1 is a side sectional view of a temperature adjusting device according to the present invention.

【図2】本発明に係る温度調整装置による冷媒圧力の時
間にともなう状態図である。
FIG. 2 is a state diagram with time of refrigerant pressure by the temperature adjusting device according to the present invention.

【図3】従来の温度調整装置の側断面図である。FIG. 3 is a side sectional view of a conventional temperature adjusting device.

【図4】従来の温度調整装置による冷媒圧力の時間にと
もなう状態図である。
FIG. 4 is a state diagram of refrigerant pressure with time according to a conventional temperature adjusting device.

【符号の説明】[Explanation of symbols]

18 冷媒配管 30 リーク配管 31 流量制限バルブ 32 流路開閉バルブ 18 Refrigerant piping 30 Leak piping 31 Flow rate limiting valve 32 Flow path opening / closing valve

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 対象物とこの対象物を支持する支持台と
の間に冷媒を供給し、冷媒の供給圧力を可変制御するこ
とによって対象物から支持台への伝熱量を変化させて対
象物の温度制御を行う温度調整装置において、冷媒を供
給する冷媒供給源と、この冷媒供給源からの冷媒供給量
を制御する制御バルブと、この制御バルブと対象物との
間に設置されて冷媒の供給圧力を検出する圧力検出手段
と、この圧力検出手段によって検出した圧力と設定温度
に対応した圧力とを比較して前記制御バルブの開閉量を
制御する制御部と、前記制御バルブと圧力検出手段との
間に配設されたリーク配管とからなることを特徴とする
温度調整装置。
1. A refrigerant is supplied between an object and a support table that supports the object, and the supply pressure of the refrigerant is variably controlled to change the amount of heat transferred from the object to the support table. In the temperature control device for performing the temperature control of, the refrigerant supply source for supplying the refrigerant, the control valve for controlling the refrigerant supply amount from the refrigerant supply source, the refrigerant installed between the control valve and the object A pressure detecting means for detecting the supply pressure, a control section for controlling the opening / closing amount of the control valve by comparing the pressure detected by the pressure detecting means with the pressure corresponding to the set temperature, the control valve and the pressure detecting means. And a leak pipe disposed between the temperature adjusting device and the leak adjusting device.
【請求項2】 対象物とこの対象物を支持する支持台と
の間に冷媒を供給し、冷媒の供給圧力を可変制御するこ
とによって対象物から支持台への伝熱量を変化させて対
象物の温度制御を行う温度調整方法において、冷媒供給
源からの冷媒供給量を制御バルブで制御し、供給される
冷媒の圧力を検出してこの検出圧力と設定温度に対応し
た圧力とを比較して前記制御バルブの開閉量を制御する
と共に、供給された冷媒の一部を外部に放出させたこと
を特徴とする温度調整方法。
2. A refrigerant is supplied between an object and a support table that supports the object, and the supply pressure of the refrigerant is variably controlled to change the amount of heat transferred from the object to the support table. In the temperature adjusting method for controlling the temperature of, the refrigerant supply amount from the refrigerant supply source is controlled by the control valve, the pressure of the supplied refrigerant is detected, and the detected pressure and the pressure corresponding to the set temperature are compared. A temperature adjusting method comprising controlling the opening / closing amount of the control valve and discharging a part of the supplied refrigerant to the outside.
JP10094392A 1992-04-21 1992-04-21 Temperature control device and method thereof Pending JPH05299379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10094392A JPH05299379A (en) 1992-04-21 1992-04-21 Temperature control device and method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10094392A JPH05299379A (en) 1992-04-21 1992-04-21 Temperature control device and method thereof

Publications (1)

Publication Number Publication Date
JPH05299379A true JPH05299379A (en) 1993-11-12

Family

ID=14287440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10094392A Pending JPH05299379A (en) 1992-04-21 1992-04-21 Temperature control device and method thereof

Country Status (1)

Country Link
JP (1) JPH05299379A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
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US5673750A (en) * 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
WO2001093321A1 (en) * 2000-05-30 2001-12-06 Tokyo Electron Limited Gas introducing system for temperature control of processed body
US6532796B1 (en) 1997-02-21 2003-03-18 Anelva Corporation Method of substrate temperature control and method of assessing substrate temperature controllability
WO2005055291A1 (en) * 2003-11-26 2005-06-16 Temptronic Corporation Apparatus and method for reducing electrical noise in a thermally controlled chuck
CN100411091C (en) * 2003-11-26 2008-08-13 天普桑尼克公司 Apparatus and method for reducing electrical noise in a thermally controlled chuck
KR101270378B1 (en) * 2010-11-02 2013-06-05 도쿄엘렉트론가부시키가이샤 Substrate processing method and recording medium for storing program executing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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