JPH05299350A - Substrate heating mechanism - Google Patents

Abstract

PURPOSE:To avoid the extension of the attaining time to a target temperature as well as the higher substrate temperature than the target temperature when the substrate is to be heated at high temperature before it is heat-treated. CONSTITUTION:Within the substrate heating mechanism, an infrared ray lamp heater 7 heating a substrate 2 using the thermal radiation on the rear side of the substrate 2, a gas leading-in part 10 heating the same 2 using the thermal conduction of gas and a heater 8 are provided inside a substrate holder 4. For the high temperature heating, the substrate 2 is heated using the thermal radiation by the infrared ray lamp heater 7, on the other hand, while the substrate 2 is being heat-treated, a gas is led in through the gas leading-in part 10 so that the substrate 2 may be heated using the thermal conduction of the gas by heating the gas led in the rear side of the substrate 2 using the heater 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heating mechanism,
In particular, it relates to a substrate heating mechanism in a vacuum processing apparatus.

[0002]

2. Description of the Related Art Conventionally, in a vacuum processing apparatus, as a mechanism for heating a substrate to be processed, a lamp type heating mechanism for heating by utilizing heat radiation and a heat conduction of a gas heated to a high temperature are utilized. There are two types: a gas type heating mechanism for heating.

The former lamp type heating mechanism is generally a mechanism in which a glass plate 3, an infrared lamp heater 7, a reflecting plate 13 and a thermocouple 5 are incorporated in a vacuum container 1 as shown in FIG. ..

The substrate 2 is a glass plate 3 which is a substrate heating position.
The substrate is transported upward by a substrate transport mechanism (not shown), and heated by heat radiation from the infrared lamp heater 7.
A reflecting plate 13 is provided in order to efficiently irradiate the substrate 2 with the heat radiation from the infrared lamp heater 7.

Further, in order to control the temperature of the substrate 2 to a target temperature, the temperature controller 6 for adjusting the electric power supplied to the infrared lamp heater 7 by feedbacking the output signal of the thermocouple 5.
And have.

On the other hand, as shown in FIG. 3, the gas type heating mechanism is composed of a gas introducing section 10, a substrate holder 4, a heater 8 and a cooling plate 12. A thermocouple 5 is incorporated in the substrate holder 4, and the cooling plate 12 is cooled by cooling water to prevent the substrate holder 14 from being heated.

The substrate 2 is carried onto the substrate holder 4 at the substrate heating position by a substrate carrying mechanism (not shown). Since the substrate holder 4 is heated by the heater 8, the gas introduced from the gas introduction unit 10 is heated by passing through the inside of the substrate holder 4.

The heated gas is the gas outlet 11
The substrate 2 is heated by being blown onto the back surface of the substrate 2 from a, 11b, and 11c. The temperature of the substrate 2 is kept at a target value by the temperature control unit 6 and the thermocouple 5, and the gas flow rate is controlled by the gas flow rate control unit 9.

[0009]

Generally, when a substrate is processed in a vacuum, for example, when a thin film is formed on the substrate by sputtering, or when the surface of the substrate is etched by plasma, high energy is applied to the substrate. The temperature of the substrate often rises due to the particles that have entered and collided.

In the above-described conventional lamp type heating mechanism, if the heating is performed at the same time as the substrate processing, the substrate temperature rises due to the substrate radiation as well as the heat radiation of the infrared lamp heater, and becomes higher than the target temperature.

However, there is a problem that the substrate temperature cannot be maintained at the target value because there is no escape route for heat in a vacuum.

On the other hand, in the conventional gas heating mechanism, since the gas is used as a heat conducting medium, even if the substrate temperature rises during the substrate processing as described above, the heat can be released from the substrate holder to the cooling plate. It is possible to keep the substrate temperature constant.

However, since the substrate holder is cooled by the cooling plate, the heating efficiency is poor, and the maximum heating temperature is lower and the temperature rising rate is slower than that of the lamp type heating mechanism. Was. If the temperature rising rate is slow, the heating time becomes long and the processing capacity of the apparatus is reduced.

It is an object of the present invention to provide a substrate heating mechanism which shortens the time required to reach a desired heating temperature of a substrate and prevents the substrate temperature during processing from becoming higher than a target temperature.

[0015]

In order to achieve the above object, a substrate heating mechanism according to the present invention comprises a substrate holder, a gas introducing section, a heater, a cooling section, an infrared lamp heater, and a control section. In the substrate heating mechanism having the substrate holder, the substrate holder holds the substrate to be processed in a vacuum container, and the gas introduction unit blows the gas supplied through the substrate holder onto the substrate to be processed. The heater heats the substrate by heat conduction, the heater heats the substrate holder, the cooling plate cools the substrate holder, and the infrared lamp heater heats the substrate by heat radiation. The control unit has a function of turning off the infrared lamp heater when the temperature of the substrate to be processed reaches a desired temperature and switching to heating by the gas introducing unit.

[0016]

[Function] Using a lamp type heating mechanism and a gas heating mechanism together,
The lamp type heating mechanism is used until the desired heating temperature of the substrate is reached, and after the temperature is reached, the processing is switched to the gas heating mechanism.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the present invention.

In FIG. 1, a substrate holder 4 for holding a substrate 2 is provided inside the vacuum container 1. Inside the substrate holder 4, an infrared lamp heater 7, a thermocouple 5a,
The heater 8, the thermocouple 5b, and the gas introduction part 10 are incorporated. A substrate holder 14 has a function of holding the substrate 2 on the substrate holder 4.

The output signals of the thermocouple 5a and the thermocouple 5b are taken into the temperature control units 6a and 6b, respectively. 1
3 is a substrate 2 for efficiently radiating the thermal radiation of the infrared lamp heater 7.
It is a reflection plate for irradiating the substrate 2, and the substrate 2 is irradiated with the light through the glass plate 3.

The reference numeral 15 stops the power supply of the infrared lamp heater 7 when the desired heating temperature of the substrate 2 is reached based on the temperature data from the temperature control units 6a and 6b, and the introduction gas flow rate control unit 9 The control unit has a function of introducing gas into the gas introduction unit 10 and switching to heating by heat conduction of the gas, and a function of controlling the operation of the entire substrate heating mechanism.

Next, the method of heating the substrate will be described in order. First, when the substrate 2 is transferred onto the substrate holder 4 heated by the heater 8 by the substrate transfer mechanism (not shown), the substrate retainer 14 fixes the substrate 2.

Next, the control unit 15 controls the infrared lamp heater 7
Is turned on and the heating temperature of the substrate 2 is controlled by the temperature controller 6a.

When the temperature of the substrate 2 reaches a desired temperature, the control unit 15 turns off the infrared lamp heater 7 to start the substrate processing, and at the same time, the gas introduction unit 10 supplies a gas equal to or inert to the process gas. Introduce. The amount of gas is controlled to be constant by the introduced gas flow rate control unit 9.

The gas heated by passing through the inside of the heated substrate holder 4 is heated by the gas outlet 11a,
It is sprayed on the back surface of the substrate 2 from 11b and 11c. The substrate 2 is heated by this heated gas.

Further, even if the substrate 2 itself is heated by the heat generated by the substrate processing, since the gas is introduced, the substrate 2
By letting the heat from the substrate holder 4 escape to the cooling plate 13, the temperature rise of the substrate 2 is suppressed, and the temperature controller 6b controls the temperature to the target value.

The gas introduced at the same time as the processing of the substrate 2 is stopped, and the substrate 2 is replaced with the next substrate by a substrate transfer mechanism (not shown). As described above, the heat treatment of the substrate is sequentially performed.

[0027]

As described above, the substrate heating mechanism of the present invention is provided with a substrate heating mechanism by heat radiation and a heating mechanism by heat conduction of gas in one substrate holder at the same time, and both are used by switching. As a result, the temperature can be controlled by increasing the temperature rising rate before the substrate processing and suppressing the substrate temperature rise during the processing.

Therefore, the processing capacity of the apparatus is improved, and the substrate can be heated at a desired temperature during processing.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of the present invention.

FIG. 2 is a sectional view showing a conventional lamp type heating mechanism.

FIG. 3 is a sectional view showing a conventional gas type heating mechanism.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Substrate 3 Glass plate 4 Substrate holder 5a, 5b Thermocouple 6a, 6b Temperature control unit 7 Infrared lamp heater 8 Heating heater 9 Introduced gas flow rate control unit 10 Gas introduction unit 11a, 11b, 11c Gas outlet 12 Cooling plate 13 Reflector 14 Substrate retainer 15 Controller

Claims (1)

[Claims] 1. A substrate heating mechanism having a substrate holder, a gas introduction unit, a heater, a cooling unit, an infrared lamp heater, and a control unit, wherein the substrate holder is a substrate to be processed in a vacuum container. The gas introduction part is to heat the substrate by spraying the gas supplied through the substrate holder onto the substrate to be processed to heat the substrate by heat conduction of the gas. The heater heats the substrate holder. The cooling plate is for cooling the substrate holder, the infrared lamp heater is for heating the substrate by heat radiation, and the control unit is the infrared ray when the substrate to be processed reaches a desired temperature. A substrate heating mechanism having a function of turning off a lamp heater and switching to heating by a gas introduction unit.