JPH05299213A - Thick film resistance aggregate forming method - Google Patents

Thick film resistance aggregate forming method

Info

Publication number
JPH05299213A
JPH05299213A JP4102975A JP10297592A JPH05299213A JP H05299213 A JPH05299213 A JP H05299213A JP 4102975 A JP4102975 A JP 4102975A JP 10297592 A JP10297592 A JP 10297592A JP H05299213 A JPH05299213 A JP H05299213A
Authority
JP
Japan
Prior art keywords
resistance
film
films
conductor
thick film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4102975A
Other languages
Japanese (ja)
Inventor
Shigeki Azuma
茂樹 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP4102975A priority Critical patent/JPH05299213A/en
Publication of JPH05299213A publication Critical patent/JPH05299213A/en
Pending legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

PURPOSE:To obtain the forming method for a thick film resistance aggregate, in which a resistance film can be arranged in high density and a complicated control of resistrance paste can be prevented, which can be excellently used for tracking of resistance temperature characteristics. CONSTITUTION:A plurality of resistance films 5 are formed using the same resistance paste, a plurality of small area conductance films 4 are dispersively arranged on the surface of at least one of the resistance films 5, and their resistance value is differentiated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基板面に抵抗値の異な
る複数個の抵抗膜を形成してなる厚膜抵抗体集合体の形
成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a thick film resistor assembly which is formed by forming a plurality of resistance films having different resistance values on a substrate surface.

【0002】[0002]

【従来の技術】従来、このような厚膜抵抗集合体を形成
するには、同じ抵抗ペーストを用い、抵抗膜の形状を変
えて異なる抵抗値の抵抗膜を得る方法と、抵抗膜の形状
は変えないで、抵抗ペーストの抵抗値を変えて異なる抵
抗値の抵抗膜を得る方法とがある。
2. Description of the Related Art Conventionally, in order to form such a thick film resistor assembly, the same resistor paste is used, the shape of the resistor film is changed to obtain resistor films having different resistance values, and the resistor film shape is different. There is a method of obtaining a resistance film having different resistance values by changing the resistance value of the resistance paste without changing the resistance value.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前者の
方法では、形状を大きくしなければ所定の抵抗値が得ら
れないものが生じるため、抵抗膜を高密度に配置するこ
とができないという問題があった。
However, the former method has a problem in that the resistance film cannot be arranged at a high density because the predetermined resistance value cannot be obtained unless the shape is enlarged. It was

【0004】また、後者の方法では、異なる抵抗ペース
トを用いるため、抵抗ペーストの管理が煩雑になるとと
もに、抵抗温度特性のトラッキングが悪くなるという問
題があった。
Further, in the latter method, since different resistance pastes are used, there is a problem that management of the resistance pastes becomes complicated and tracking of resistance temperature characteristics becomes poor.

【0005】したがって、本発明においては、抵抗膜を
高密度に配置することができ、そのうえ、抵抗ペースト
の管理も煩雑にならず、抵抗温度特性のトラッキングに
も優れたものとなる厚膜抵抗集合体の形成方法を提供す
ることを目的としている。
Therefore, in the present invention, the resistance film can be arranged at a high density, the management of the resistance paste is not complicated, and the resistance temperature characteristic is excellently tracked. It is intended to provide a method of forming a body.

【0006】[0006]

【課題を解決するための手段】このような目的を達成す
るため、本発明の厚膜抵抗集合体の形成方法において
は、同じ抵抗ペーストを用いて複数個の抵抗膜を形成
し、そのうちの少なくとも1つの抵抗膜面に複数個の小
面積の導体膜を分散配置してその抵抗値を異ならせるこ
とを特徴としている。
In order to achieve such an object, in the method of forming a thick film resistor assembly of the present invention, a plurality of resistive films are formed using the same resistive paste, and at least one of them is formed. The present invention is characterized in that a plurality of small area conductor films are dispersedly arranged on one resistance film surface to have different resistance values.

【0007】[0007]

【作用】複数個の小面積の導体膜を分散配置した抵抗膜
は、導体膜を分散配置していない抵抗膜に比べて抵抗値
が低くなるため、複数個の抵抗膜を同じ抵抗ペーストを
用いて同じ形状で形成してもそれらの抵抗値を異ならせ
ることができる。 また、分散配置する導体膜の面積を
変えたり、分散配置する導体膜の個数を変えたりするこ
とにより、抵抗膜の抵抗値を調節することができる。
Since the resistance film in which a plurality of conductor films having small areas are dispersed has a lower resistance value than the resistance film in which the conductor films are not dispersed, a plurality of resistance films are formed by using the same resistance paste. Even if they are formed in the same shape, their resistance values can be made different. Further, the resistance value of the resistance film can be adjusted by changing the area of the conductor film to be dispersed and changing the number of the conductor films to be dispersed.

【0008】したがって、抵抗値の高い抵抗膜を基準に
して抵抗ペーストを選定しておくことにより、抵抗値の
低い抵抗膜は小面積の導体膜を分散配置することにより
形成することができ、抵抗膜の形状を従来の同じ抵抗ペ
ーストを用いた場合のように大きく変える必要がなくな
る。
Therefore, by selecting the resistance paste based on the resistance film having the high resistance value, the resistance film having the low resistance value can be formed by disposing the conductor films having a small area in a dispersed manner. There is no need to significantly change the shape of the film as in the case of using the same resistance paste as in the related art.

【0009】[0009]

【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0010】まず、図1に示すように、基板1面に複数
組の対となる電極2、3と、基板1面の所定の電極2、
3間に複数個の小面積の導体膜4を形成する。
First, as shown in FIG. 1, a plurality of pairs of electrodes 2 and 3 on a surface of a substrate, and predetermined electrodes 2 on a surface of the substrate 1,
A plurality of small-area conductor films 4 are formed between the three.

【0011】これらの電極2、3と導体膜4は、導体ペ
ーストをスクリーン印刷して乾燥し、その後に焼成して
形成する。
The electrodes 2 and 3 and the conductor film 4 are formed by screen-printing a conductor paste, drying it, and then firing it.

【0012】ついで、図2に示すように、この基板1面
にそれぞれの対になる電極2、3間にまたがって抵抗膜
5を形成する。
Then, as shown in FIG. 2, a resistive film 5 is formed on the surface of the substrate 1 so as to extend over the electrodes 2 and 3 forming a pair.

【0013】これらの抵抗膜5は、同じ抵抗ペーストを
用いて同じ形状になるようにスクリーン印刷して乾燥
し、その後に焼成して形成する。
These resistance films 5 are formed by screen printing using the same resistance paste so as to have the same shape, drying, and then firing.

【0014】このようにして、厚膜抵抗集合体が形成さ
れるが、上記実施例における抵抗膜5のうち、導体膜4
を分散配置した抵抗膜5は導体膜4を分散配置していな
い抵抗膜5に比べて抵抗値が低くなる。
In this way, the thick film resistance assembly is formed. Of the resistance films 5 in the above embodiment, the conductor film 4 is used.
The resistance value of the resistance film 5 in which the conductive film 4 is dispersed is lower than that of the resistance film 5 in which the conductor film 4 is not dispersed.

【0015】また、この抵抗値の低い抵抗膜5は、分散
配置する導体膜4の個数や面積を異ならせることによっ
てその抵抗値を調節することができる。したがって、同
じ厚膜抵抗集合体における抵抗膜5の抵抗値をそれぞれ
異ならせる場合には、導体膜4の個数や面積を必要とす
る抵抗値に応じて異ならせればよいし、1つの抵抗膜5
のみを他の抵抗膜5と異ならせる(具体的にはその抵抗
値を低くする)必要のある場合には、その1つの抵抗膜
5のみに導体膜4を分散配置すればよい。
The resistance value of the resistance film 5 having a low resistance value can be adjusted by changing the number and area of the conductor films 4 dispersedly arranged. Therefore, when the resistance values of the resistance films 5 in the same thick film resistance assembly are made different, the number and area of the conductor films 4 may be made different according to the required resistance value, and one resistance film 5 is required.
When it is necessary to make only one resistance film 5 different from the other resistance film 5 (specifically, lower its resistance value), the conductor film 4 may be dispersedly arranged only on the one resistance film 5.

【0016】なお、上記実施例においては、図示からも
明らかなように、導体膜4を抵抗膜5の略全域に分散配
置したものであるが、図3〜図5に示すように抵抗膜5
の特定の領域のみに分散配置するようにしてもよい。
In the above embodiment, as is apparent from the drawing, the conductor film 4 is dispersed and arranged in substantially the entire area of the resistance film 5. However, as shown in FIGS.
Alternatively, they may be distributed and arranged only in a specific area of.

【0017】また、上記実施例においては、電極2、3
と導体膜4を抵抗膜5よりも先に形成しているが、抵抗
膜5を先に形成し、その後に電極2、3と導体膜4を形
成するようにしてもよい。当然のことではあるが、導体
膜4を先に形成した場合は、導体膜4は抵抗膜5の下面
に位置し、後で形成した場合は抵抗膜5の上面に位置す
ることになる。電極2、3の抵抗膜5と接触する部分も
同様である。
Further, in the above embodiment, the electrodes 2, 3
Although the conductor film 4 and the conductor film 4 are formed before the resistance film 5, the resistance film 5 may be formed first, and then the electrodes 2 and 3 and the conductor film 4 may be formed. As a matter of course, when the conductor film 4 is formed first, the conductor film 4 is located on the lower surface of the resistance film 5, and when it is formed later, it is located on the upper surface of the resistance film 5. The same applies to the portions of the electrodes 2 and 3 in contact with the resistance film 5.

【0018】また、電極2、3と導体膜4とを別工程で
形成し、導体膜4のみを抵抗膜5の上面に形成してもよ
い。
Alternatively, the electrodes 2 and 3 and the conductor film 4 may be formed in separate steps, and only the conductor film 4 may be formed on the upper surface of the resistance film 5.

【0019】さらには、抵抗膜5の形状を高密度配置の
支障にならない範囲で変えることは任意におこない得
る。
Furthermore, the shape of the resistance film 5 can be arbitrarily changed within a range that does not hinder high-density arrangement.

【0020】[0020]

【発明の効果】以上説明したことから明らかなように本
発明によれば、同じ抵抗ペーストを用いて複数個の抵抗
膜を形成し、そのうちの少なくとも1つの抵抗膜面に複
数個の小面積の導体膜を分散配置してその抵抗値を異な
らせるようにしたから、抵抗膜の形状を従来の同じ抵抗
ペーストを用いた場合のように大きく変える必要がなく
なる。
As is apparent from the above description, according to the present invention, a plurality of resistance films are formed by using the same resistance paste, and at least one of the resistance films has a plurality of small areas. Since the conductor films are arranged in a dispersed manner so that the resistance values thereof are different, it is not necessary to change the shape of the resistance film largely as in the case of using the same conventional resistance paste.

【0021】そのため、抵抗膜を高密度に配置すること
が可能となり、抵抗ペーストの管理も煩雑にならず、抵
抗温度特性のトラッキングにも優れたものとなる。
Therefore, the resistance films can be arranged at a high density, the management of the resistance paste is not complicated, and the resistance temperature characteristic tracking is also excellent.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例の厚膜抵抗集合体の形成方法を
説明するための電極と導体膜とを形成した基板の要部平
面図である。
FIG. 1 is a plan view of a main part of a substrate on which electrodes and conductor films are formed for explaining a method of forming a thick film resistor assembly according to an example of the present invention.

【図2】図1に示される基板に抵抗膜を形成した基板の
要部の平面図である。
FIG. 2 is a plan view of an essential part of a substrate in which a resistive film is formed on the substrate shown in FIG.

【図3】導体膜の分散配置状態の変形例を示す抵抗膜の
平面図である。
FIG. 3 is a plan view of a resistance film showing a modified example of a dispersed arrangement state of conductor films.

【図4】導体膜の分散配置状態の他の変形例を示す抵抗
膜の平面図である。
FIG. 4 is a plan view of a resistance film showing another modified example of a dispersed arrangement state of conductor films.

【図5】導体膜の分散配置状態のさらに別の変形例を示
す抵抗膜の平面図である。
FIG. 5 is a plan view of a resistance film showing still another modified example of a dispersed arrangement state of conductor films.

【符号の説明】[Explanation of symbols]

1 基板 2、3 電極 4 導体膜 5 抵抗膜 1 substrate 2, 3 electrode 4 conductor film 5 resistance film

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板面に同じ抵抗ペーストを印刷すること
により、抵抗値の異なる複数個の抵抗膜を形成してなる
厚膜抵抗集合体の形成方法であって、複数個の抵抗膜の
うちの少なくとも1つの抵抗膜面に複数個の小面積の導
体膜を分散配置してその抵抗値を異ならせることを特徴
とする厚膜抵抗集合体の形成方法。
1. A method of forming a thick film resistor assembly comprising forming a plurality of resistive films having different resistance values by printing the same resistive paste on a substrate surface, the method comprising: 2. A method for forming a thick film resistor assembly, characterized in that a plurality of conductor films having a small area are dispersedly arranged on at least one resistance film surface and the resistance values thereof are made different.
JP4102975A 1992-04-22 1992-04-22 Thick film resistance aggregate forming method Pending JPH05299213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4102975A JPH05299213A (en) 1992-04-22 1992-04-22 Thick film resistance aggregate forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4102975A JPH05299213A (en) 1992-04-22 1992-04-22 Thick film resistance aggregate forming method

Publications (1)

Publication Number Publication Date
JPH05299213A true JPH05299213A (en) 1993-11-12

Family

ID=14341751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4102975A Pending JPH05299213A (en) 1992-04-22 1992-04-22 Thick film resistance aggregate forming method

Country Status (1)

Country Link
JP (1) JPH05299213A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021065329A1 (en) * 2019-09-30 2021-04-08 京セラ株式会社 Circuit substrate and electronic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021065329A1 (en) * 2019-09-30 2021-04-08 京セラ株式会社 Circuit substrate and electronic device
JPWO2021065329A1 (en) * 2019-09-30 2021-04-08

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