JPH0529672A - Circuit including superconducting field effect element - Google Patents
Circuit including superconducting field effect elementInfo
- Publication number
- JPH0529672A JPH0529672A JP3205524A JP20552491A JPH0529672A JP H0529672 A JPH0529672 A JP H0529672A JP 3205524 A JP3205524 A JP 3205524A JP 20552491 A JP20552491 A JP 20552491A JP H0529672 A JPH0529672 A JP H0529672A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- field effect
- superconducting field
- effect element
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超電導素子を含む回路
に関する。チャネルが酸化物超電導体で構成されている
電界効果型三端子素子を含む回路に関する。FIELD OF THE INVENTION The present invention relates to a circuit including a superconducting element. The present invention relates to a circuit including a field effect type three-terminal element in which a channel is composed of an oxide superconductor.
【０００２】[0002]
【従来の技術】超電導現象を利用した素子は、従来の半
導体素子に比較して高速であり、消費電力も小さく、飛
躍的に高性能化することができると考えられている。特
に近年研究が進んでいる酸化物超電導体を使用すること
により、比較的高い温度で動作する超電導素子を作製す
ることが可能である。超電導素子としては、ジョセフソ
ン素子がよく知られているが、ジョセフソン素子は２端
子の素子であるので論理回路を構成しようとすると、回
路が複雑になる。そのため、３端子の超電導素子が実用
上有利である。2. Description of the Related Art It is considered that an element utilizing the superconducting phenomenon is faster than a conventional semiconductor element, consumes less power, and can be dramatically improved in performance. In particular, by using an oxide superconductor, which has been studied in recent years, it is possible to manufacture a superconducting element that operates at a relatively high temperature. As a superconducting element, a Josephson element is well known, but since the Josephson element is a two-terminal element, the circuit becomes complicated when trying to configure a logic circuit. Therefore, a three-terminal superconducting element is practically advantageous.
【０００３】３端子の超電導素子には、近接させて配置
した超電導電極間の半導体に超電導電流を流す超電導近
接効果を利用したものと、超電導チャネルに流れる超電
導電流をゲート電極で制御するものとが代表的である。
どちらの素子も入出力の分離が可能であり、電圧制御型
の素子であって、信号の増幅作用があるという点では共
通している。しかしながら、チャネルが超電導チャネル
になっている超電導素子は、電流密度が大きく、製造上
も超電導電極を近接させて配置するという微細加工を必
要としないので有利である。Three-terminal superconducting elements include those utilizing the superconducting proximity effect in which a superconducting current flows in a semiconductor between superconducting electrodes arranged in close proximity, and one in which a superconducting current flowing in a superconducting channel is controlled by a gate electrode. Is typical.
Both elements can separate input and output, are voltage-controlled elements, and have a common point in that they have a signal amplifying action. However, a superconducting element whose channel is a superconducting channel has a large current density, and is advantageous because it does not require microfabrication such that superconducting conductive electrodes are arranged close to each other in manufacturing.
【０００４】図３に、超電導チャネルを有する超電導電
界効果型素子の一例の概略図を示す。図３の超電導電界
効果型素子１は、基板10上に配置された酸化物超電導体
による超電導チャネル２と、超電導チャネル２の両端付
近にそれぞれ配置されたソース電極３およびドレイン電
極４と、ゲート電極５とを具備する。この超電導電界効
果型素子は、ソース電極３およびドレイン電極４間を流
れる超電導電流をゲート電極５に印加する電圧で制御す
る。FIG. 3 shows a schematic view of an example of a superconducting field effect device having a superconducting channel. The superconducting field effect device 1 shown in FIG. 3 comprises a superconducting channel 2 made of an oxide superconductor arranged on a substrate 10, a source electrode 3 and a drain electrode 4 arranged near both ends of the superconducting channel 2, and a gate electrode. And 5. In this superconducting field effect element, the superconducting current flowing between the source electrode 3 and the drain electrode 4 is controlled by the voltage applied to the gate electrode 5.
【０００５】[0005]
【発明が解決しようとする課題】このような超電導電界
効果型素子の特性を図４に示す。図４(a)は、図３に示
した超電導電界効果型素子において、特定のゲート電圧
値に対するソース−ドレイン間の電圧−電流特性を示し
たグラフである。図４(a)のグラフに示した特性は、い
わゆる所要特性と呼ばれる理想的な状態における特性で
ある。しかしながら、実際に図４(a)に示す特性の素子
を動作させた場合には、図４(a)に示すような示さず、
ヒステリシス特性を示す。図４(b)に、図４(a)に示した
特性を有する超電導電界効果型素子のゲート電圧を一定
にして、ソース−ドレイン間の電圧を変化させたときの
電流の変化を示す。The characteristics of such a superconducting field effect element are shown in FIG. FIG. 4A is a graph showing the voltage-current characteristics between the source and the drain with respect to a specific gate voltage value in the superconducting field effect device shown in FIG. The characteristics shown in the graph of FIG. 4 (a) are characteristics in an ideal state called so-called required characteristics. However, when an element having the characteristics shown in FIG. 4A is actually operated, it is not shown as shown in FIG.
Shows hysteresis characteristics. FIG. 4B shows a change in current when the gate voltage of the superconducting field effect device having the characteristics shown in FIG. 4A is kept constant and the voltage between the source and the drain is changed.
【０００６】図４(b)に示すようこの超電導電界効果型
素子は、電圧が上昇するときと、電圧が下降するときと
で、電流が異なる変化を起こす。このような超電導電界
効果型素子は、ゲート電圧の値およびソース−ドレイン
間電圧の値に対するソース−ドレイン間電流の値が、特
定できないため実用性が低い。As shown in FIG. 4 (b), in this superconducting field effect device, the current changes differently when the voltage rises and when the voltage falls. Such a superconducting field effect device is not practical because the value of the source-drain current with respect to the value of the gate voltage and the value of the source-drain voltage cannot be specified.
【０００７】そこで、本発明の目的は、上記の超電導電
界効果型素子の特性を改善する回路を提供することにあ
る。Therefore, an object of the present invention is to provide a circuit for improving the characteristics of the above superconducting field effect device.
【０００８】[0008]
【課題を解決するための手段】本発明に従うと、酸化物
超電導体で構成された超電導チャネルと、該超電導チャ
ネルの両端近傍に配置されたソース電極およびドレイン
電極と、前記超電導チャネルを流れる電流を制御するた
めのゲート電圧とを備える超電導電界効果型素子と、該
超電導電界効果型素子の前記ソース電極およびドレイン
電極間に接続されたインピーダンス素子とを含むことを
特徴とする超電導電界効果型素子を含む回路が提供され
る。According to the present invention, a superconducting channel formed of an oxide superconductor, a source electrode and a drain electrode arranged near both ends of the superconducting channel, and a current flowing through the superconducting channel are provided. A superconducting field effect element comprising: a superconducting field effect element having a gate voltage for controlling; and an impedance element connected between the source electrode and the drain electrode of the superconducting field effect element. A circuit including is provided.
【０００９】本発明の回路では、上記インピーダンス素
子が抵抗素子であることが好ましく、前記超電導電界効
果型素子とインピーダンス素子とが同一のパッケージに
収納されていることが好ましい。In the circuit of the present invention, the impedance element is preferably a resistance element, and the superconducting field effect element and the impedance element are preferably housed in the same package.
【００１０】[0010]
【作用】本発明の回路は、ソース電極およびドレイン電
極間に配置された超電導チャネルを有する超電導電界効
果型素子と、この超電導電界効果型素子のソース電極お
よびドレイン電極間に超電導チャネルと並列に配置され
たインピーダンス素子とを具備するところにその主要な
特徴がある。本発明の回路では、上記のインピーダンス
素子としては抵抗回路を使用することが好ましい。抵抗
素子は、周波数によりインピーダンスの値がほとんど変
動しないので、高速動作を目的とする超電導電界効果型
素子と組み合わせた場合に不都合が少ないからである。
本発明の回路は、上記の超電導電界効果型素子とインピ
ーダンス素子とを同一のパッケージに収納することが好
ましい。本発明の回路は、事実上単一の素子として動作
するからで、単一の素子としての取扱が便利であるよう
上記の超電導電界効果型素子とインピーダンス素子とを
同一のパッケージに収納することが好ましい。The circuit of the present invention comprises a superconducting field effect element having a superconducting channel arranged between a source electrode and a drain electrode, and a superconducting channel arranged in parallel between the source electrode and the drain electrode of the superconducting field effect element. The main characteristic is that the impedance element is provided. In the circuit of the present invention, it is preferable to use a resistance circuit as the impedance element. This is because the resistance value of the resistance element hardly fluctuates depending on the frequency, so that there is little inconvenience when combined with a superconducting field effect element for the purpose of high-speed operation.
In the circuit of the present invention, it is preferable that the superconducting field effect element and the impedance element are housed in the same package. Since the circuit of the present invention effectively operates as a single element, the superconducting field effect element and the impedance element can be housed in the same package so that the single element can be conveniently handled. preferable.
【００１１】本発明の回路の上記インピーダンス素子に
抵抗素子を使用する場合、この抵抗素子の抵抗値は、上
記超電導電界効果型素子の超電導チャネルのゲートが閉
じているときの超電導チャネルのソース−ドレイン間の
抵抗値よりもかなり小さい値としなければならない。こ
れは、本発明の回路では、超電導電界効果型素子の超電
導チャネルのゲートが閉じているとき、ソース−ドレイ
ン間電流を上記のインピーダンス素子に流す構成だから
である。超電導電界効果型素子の超電導チャネルのゲー
トが閉じているときのソース−ドレイン間抵抗と上記の
抵抗素子の抵抗値が近い場合には、本発明の回路の効果
である超電導電界効果型素子のヒステリシス特性を改善
することができない。When a resistance element is used as the impedance element of the circuit of the present invention, the resistance value of the resistance element is such that the source-drain of the superconducting channel when the gate of the superconducting channel of the superconducting field effect element is closed. It must be much smaller than the resistance between them. This is because, in the circuit of the present invention, when the gate of the superconducting channel of the superconducting field effect element is closed, the source-drain current is passed through the impedance element. When the resistance between the source and drain when the gate of the superconducting field effect element of the superconducting field effect element is closed and the resistance value of the above resistance element are close to each other, the hysteresis of the superconducting field effect element which is the effect of the circuit of the present invention. The characteristics cannot be improved.
【００１２】以下、本発明を実施例によりさらに詳しく
説明するが、以下の開示は本発明の単なる実施例に過ぎ
ず、本発明の技術的範囲をなんら制限するものではな
い。Hereinafter, the present invention will be described in more detail with reference to examples, but the following disclosure is merely examples of the present invention and does not limit the technical scope of the present invention.
【００１３】[0013]
【実施例】図１(a)に本発明の回路の一例の回路図を示
す。図１に示すように本発明の回路は、超電導電界効果
型素子１のソース電極３とドレイン電極４間の超電導チ
ャネル２に並列にインピーダンス素子６が接続された構
成となっている。超電導電界効果型素子１には、例えば
本件特許出願人の出願による特願平２−236534号に開示
されている超電導チャネルに酸化物超電導体を使用した
超電導電界効果型素子が好ましい。また、インピーダン
ス素子としては、例えば、抵抗素子を使用することがで
きる。インピーダンス素子に抵抗素子を使用した場合に
は、この抵抗素子の抵抗値は、超電導電界効果型素子１
のゲート電極５に電圧が印加されて超電導チャネル２の
ゲートが閉じているときの超電導チャネル２の抵抗値よ
りも、かなり小さい値としなければならない。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 (a) shows a circuit diagram of an example of the circuit of the present invention. As shown in FIG. 1, the circuit of the present invention has a configuration in which an impedance element 6 is connected in parallel to a superconducting channel 2 between a source electrode 3 and a drain electrode 4 of a superconducting field effect element 1. As the superconducting field effect element 1, for example, a superconducting field effect element using an oxide superconductor in a superconducting channel disclosed in Japanese Patent Application No. 2-236534 filed by the present applicant is preferable. As the impedance element, for example, a resistance element can be used. When a resistance element is used as the impedance element, the resistance value of this resistance element is the superconducting field effect type element 1.
Of the superconducting channel 2 when a voltage is applied to the gate electrode 5 of the superconducting channel 2 and the gate of the superconducting channel 2 is closed.
【００１４】図１(b)および(c)を参照して、インピーダ
ンス素子に抵抗素子を使用した本発明の回路の動作を説
明する。図１(b)は、本発明の回路において、超電導電
界効果型素子１のゲート電極５に電圧が印加されてな
く、超電導チャネル２のゲートが開いている状態を示
す。このとき、超電導チャネル２は、超電導状態であ
り、電気抵抗が事実上０であるので、ソース−ドレイン
間電流は全て超電導チャネル２を流れる。With reference to FIGS. 1B and 1C, the operation of the circuit of the present invention using a resistance element as the impedance element will be described. FIG. 1B shows a state in the circuit of the present invention in which a voltage is not applied to the gate electrode 5 of the superconducting field effect element 1 and the gate of the superconducting channel 2 is open. At this time, since the superconducting channel 2 is in the superconducting state and the electric resistance is practically 0, all the source-drain current flows through the superconducting channel 2.
【００１５】図１(c)は本発明の回路において、超電導
電界効果型素子１のゲート電極５に電圧が印加されて、
超電導チャネル２のゲートが閉じている状態を示す。こ
の場合、超電導チャネル２の超電導状態は失われてい
る。このとき、超電導チャネル２の抵抗値Ｒs は、ソー
ス−ドレイン間の電圧が上昇して超電導チャネル２に電
流が流れ始めるときの抵抗値Ｒupおよびソース−ドレイ
ン間の電圧が下降して超電導チャネル２に流れていた電
流が断たれる瞬間の抵抗値Ｒdownと、次のような関係に
なっている。
Ｒup＜Ｒs ＜Ｒdown
抵抗素子16の抵抗値Ｒは、Ｒ≪Ｒupに設定されているの
で、このときのソース−ドレイン間電流はほとんど抵抗
素子16をながれる。従って、この場合のソース−ドレイ
ン間抵抗は、ほぼＲに等しい。FIG. 1 (c) shows that in the circuit of the present invention, a voltage is applied to the gate electrode 5 of the superconducting field effect device 1,
The state where the gate of the superconducting channel 2 is closed is shown. In this case, the superconducting state of the superconducting channel 2 is lost. At this time, the resistance value R s of the superconducting channel 2 is such that the resistance value R up when the source-drain voltage rises and a current starts flowing in the superconducting channel 2 and the source-drain voltage decreases. The resistance value R down at the moment when the current flowing in 2 is cut off has the following relationship. R up <R s <R down Since the resistance value R of the resistance element 16 is set to R << R up , most of the source-drain current at this time flows through the resistance element 16. Therefore, the source-drain resistance in this case is approximately equal to R.
【００１６】図２に上記本発明の回路の特性図を示す。
図２に示すよう、本発明の回路では、超電導電界効果型
素子１のヒステリシス特性が解消されており、ゲート電
圧によりソース−ドレイン間の電圧電流特性のループを
特定することができる。従って、本発明の回路は、事実
上単一の３端子素子として動作し、特に電子機器等に使
用する場合に実用性が高い。FIG. 2 shows a characteristic diagram of the circuit of the present invention.
As shown in FIG. 2, in the circuit of the present invention, the hysteresis characteristic of the superconducting field effect element 1 is eliminated, and the loop of the voltage-current characteristic between the source and the drain can be specified by the gate voltage. Therefore, the circuit of the present invention effectively operates as a single three-terminal element, and has high practicability especially when used in electronic devices and the like.
【００１７】上記本発明の回路は、超電導電界効果型素
子とインピーダンス素子とで主に構成されているが、上
述のように事実上単一の３端子素子として動作するの
で、１個のパッケージに収納されていることが好まし
い。即ち、超電導電界効果型素子とインピーダンス素子
とが同一のパッケージ内に収納され、外観上も単一の素
子とすることが実用上の利便性を向上させる。The circuit of the present invention is mainly composed of a superconducting field effect type element and an impedance element. However, as described above, the circuit actually operates as a single three-terminal element, so that it is packaged in one package. It is preferably stored. That is, it is possible to improve the practical convenience in that the superconducting field effect element and the impedance element are housed in the same package and the appearance is a single element.
【００１８】[0018]
【発明の効果】以上説明したように、本発明に従えば、
実用性の高い超電導３端子素子として動作する回路が提
供される。本発明を超電導回路、電子機器の作製に応用
することにより、従来得られなかった高性能な電子装置
が作製可能である。As described above, according to the present invention,
A circuit that operates as a highly practical superconducting three-terminal element is provided. By applying the present invention to the production of superconducting circuits and electronic equipment, it is possible to produce high-performance electronic devices that have not been obtained in the past.
【図１】(a)は、本発明の回路の一例の回路図を示し、
(b)および(c)は、本発明の回路の動作を示す概念図であ
る。FIG. 1A shows a circuit diagram of an example of a circuit of the present invention,
(b) And (c) is a conceptual diagram which shows operation | movement of the circuit of this invention.
【図２】本発明の回路の特性図である。FIG. 2 is a characteristic diagram of the circuit of the present invention.
【図３】超電導電界効果型素子の概略図である。FIG. 3 is a schematic view of a superconducting field effect device.
【図４】超電導電界効果型素子の特性図である。FIG. 4 is a characteristic diagram of a superconducting field effect device.
１ 超電導電界効果型素子 ２ 超電導チャネル ３ ソース電極 ４ ドレイン電極 ５ ゲート電極 ６ インピーダンス素子 1 Superconducting field effect device 2 Superconducting channel 3 Source electrode 4 drain electrode 5 Gate electrode 6 Impedance element
Claims (3)
ネルと、該超電導チャネルの両端近傍に配置されたソー
ス電極およびドレイン電極と、前記超電導チャネルを流
れる電流を制御するためのゲート電圧とを備える超電導
電界効果型素子と、該超電導電界効果型素子の前記ソー
ス電極およびドレイン電極間に接続されたインピーダン
ス素子とを含むことを特徴とする超電導電界効果型素子
を含む回路。1. A superconducting channel composed of an oxide superconductor, source and drain electrodes arranged near both ends of the superconducting channel, and a gate voltage for controlling a current flowing through the superconducting channel. A circuit including a superconducting field effect element, comprising: a superconducting field effect element; and an impedance element connected between the source electrode and the drain electrode of the superconducting field effect element.
あることを特徴とする請求項１に記載の超電導電界効果
型素子を含む回路。2. The circuit including a superconducting field effect element according to claim 1, wherein the impedance element is a resistance element.
ピーダンス素子とが、同一のパッケージに収納されてい
ることを特徴とする請求項１または請求項２の記載の超
電導電界効果型素子を含む回路。3. The circuit including the superconducting field effect element according to claim 1, wherein the superconducting field effect element and the impedance element are housed in the same package. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3205524A JPH0529672A (en) | 1991-07-22 | 1991-07-22 | Circuit including superconducting field effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3205524A JPH0529672A (en) | 1991-07-22 | 1991-07-22 | Circuit including superconducting field effect element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0529672A true JPH0529672A (en) | 1993-02-05 |
Family
ID=16508312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3205524A Withdrawn JPH0529672A (en) | 1991-07-22 | 1991-07-22 | Circuit including superconducting field effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0529672A (en) |
-
1991
- 1991-07-22 JP JP3205524A patent/JPH0529672A/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5024993A (en) | Superconducting-semiconducting circuits, devices and systems | |
| US4371796A (en) | Josephson logic gate device | |
| US4864162A (en) | Voltage variable FET resistor with chosen resistance-voltage relationship | |
| US3573661A (en) | Sns supercurrent junction devices | |
| JPH0529672A (en) | Circuit including superconducting field effect element | |
| US3050643A (en) | Superconductive gate switching its conducting state in response to mechanical stressimposed by piezoelectric crystal | |
| JPH07161965A (en) | Semiconductor device and multivalued logical circuit | |
| JPS60200547A (en) | Semiconductor device | |
| JPH0537035A (en) | Superconductive device | |
| JPS63308975A (en) | Current control element | |
| JP3290452B2 (en) | Negative resistance type bistable circuit and control method of the negative resistance | |
| JPH0537033A (en) | Superconductive device | |
| JPH0537032A (en) | Superconductive device | |
| JPH06216736A (en) | Solid-state relay with varistor | |
| JPH02280506A (en) | Digital control piezoelectric oscillating circuit | |
| JPS6212212A (en) | Superconduction circuit | |
| Terzioglu et al. | Margins and yield in superconducting circuits with gain | |
| JPH02199880A (en) | Superconducting switch | |
| JPH0223033B2 (en) | ||
| JPH0537036A (en) | Superconductive device and manufacture thereof | |
| JPS60194378A (en) | Superconductive quantum interference element circuit | |
| JPH01220483A (en) | Superconducting electronic device | |
| JPS60246601A (en) | Resistor for superconductive circuit | |
| JPH0582847A (en) | Superconducting field effect type element | |
| JPH0730160A (en) | Superconducting transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981008 |