JPH01220483A - Superconducting electronic device - Google Patents

Abstract

PURPOSE:To implement diode operation between superconductive materials, by bonding a plurality of superconductive materials having different superconductive transition temperature, and making a current flow at a specified temperature. CONSTITUTION:A superconductive material 1 having a superconducting transition temperature TA and a superconductive material 1 having a superconducting transition temperature TB are bonded, and a terminal a3 and a terminal b4 are provided. A current is made to flow from the terminal a3 to the terminal b4 through a superconductive element in this structure at temperature TA<T< TB. Then, the superconductive material 2 indicates a normal conductive state, and the superconductive element indicates a high resistance. When a current is made to flow from the terminal b4 to the terminal a3, the wave function of electrons in the superconducting state is inputted into the superconductive material 2 from the superconductive material 1. As a result, the superconductive material that is formed in a sufficiently thin pattern becomes the superconducting state, and almost no resistance is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to electronic devices, and particularly to an element suitable for diode-like operation and an element suitable for transistor-like operation.

(Prior art) It has been reported that the wave function of superconducting electrons leaks into other regions, and it has been put to practical use as a Josephson device.Also, Solid State Physics 110 Q, 22°Nα2.
As described in p. 47, devices have been devised that operate like transistors when used in conjunction with semiconductors.

[Problem to be solved by the invention]

Previous reports did not consider a structure in which superconducting materials are bonded together to operate like a diode or transistor.

An object of the present invention is to provide an electronic device using a superconducting material that operates like a diode or transistor.

[Means to solve the problem]

A diode-like operation is realized by joining a superconducting material A having a superconducting transition temperature TA and a superconducting material B having a superconducting transition temperature Ta and operating them at a temperature T such that TA<T<TB.

Further, in the above structure, by flowing a current into material B from a separate terminal, it is possible to control the value of the current passing through materials A and B, and transistor-like operation is realized.

[Effect]

FIG. 1 shows the structure of a device that operates like a diode. A superconducting material A with a superconducting transition temperature of 1゛^, denoted by the symbol 1, and a superconducting material B having a superconducting transition temperature of Ta with a thickness of about 100 Å or less, denoted by the symbol 2, are joined together, and a terminal a, denoted by the symbol 3, is formed. , a terminal indicated by reference numeral 4 is provided. TA＜T＜
At a temperature T of T B, when a current flows from a to b direction (fl! child flows from b to a direction),
Material B is in a normal conducting state and the device exhibits high resistance. When a current flows from b to a direction (electrons flow from a to b direction), the wave function of superconducting electrons from material A seeps into material B, resulting in a sufficiently thin layer. Material B becomes superconductive and has almost no resistance. According to the measuring circuit shown in FIG. 2, the operation of this element is such that the current I with respect to the voltage V is as shown in FIG. 3. For O < V < V N, the current flowing through the circuit 1
is determined only by the external resistance Ro, and I=V/Ro. By increasing the voltage, the current value becomes too large, that is, V
>VN.

When I > I N, the superconductivity of material A is broken and it becomes normal conduction, and the current flowing through the circuit is I = V/(Ro
+ (Resistance of material A) + (Resistance of material B)), 1
! In the negative pressure region, material B is always a normal conductor, so
The current flowing in the circuit is I = V / (R.

+(resistance of material B)). Also, although not shown in Figure 3, when the current value becomes smaller than IN, the normal conduction transition of material A decreases as in the positive direction, so the current value at lower voltages is I = V. / (Ro+ (Resistance of A) + (Resistance of B)).

Next, FIG. 4 shows the structure of a device that operates like a transistor. In addition to the device structure shown in FIG.
) is attached. By passing a current between terminals C and 6, the width of the superconducting region generated in material B due to the leakage of the wave function is changed.
The resistance value between the terminal and the terminal can be changed. That is,
When the circuit shown in FIG. 5 is used, the current Iab between the terminals a and 2 can be changed as shown in FIG. 6 by the current Ici between the terminals C and 6.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG. 7th
The superconducting device shown in the figure is the same as the device shown in FIG.

The terminals 1 and d are shared, and the operation is the same as that of the device shown in FIG. The circuit shown in FIG. 7 is a type of amplifier circuit, and by using the bias voltage Vbsas,
As shown in FIG. 8, in the region from zero V to Vblas, V o u i□,
Monotonically increasing control is possible.

〔Effect of the invention〕

According to the present invention, a superconducting element that operates like a diode and a transistor can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing the structure of an element that operates like a diode, FIG. 2 is a circuit diagram for measuring the operation of the element in FIG. 1, and FIG. 3 is a diagram of operating characteristics obtained by the measuring circuit in FIG. 2. FIG. 4 is a schematic diagram showing the structure of an element that operates like a transistor, FIG. 5 is a circuit diagram for measuring the operation of the element in FIG. 4, and FIG. 6 is a diagram of operating characteristics obtained by the measuring circuit in FIG. FIG. 7 is a diagram of an amplifier circuit using a three-terminal version of the element shown in FIG. 4, and FIG. 8 is a diagram showing the operating characteristics of the circuit shown in FIG. 1...Superconducting material A, 2...Superconducting material B, 3...
・Terminal 1st Prisoner 2nd Day Trip 4-Figure (11th and 28th

Claims (1)

[Claims] 1. It has a structure in which a superconducting material A having a superconducting transition temperature T_A and a superconducting material B having a superconducting transition temperature T_B are joined,
At a temperature T such that T_A<T<T_B, the current flows through the material A.
An electronic device characterized in that the entire structure has different resistance values when flowing from material B toward material B and when flowing from material B toward material A. 2. An electronic device according to claim 1, characterized in that superconducting ceramics are used as the superconducting material. 3. It has a structure in which a superconducting material A having a superconducting transition temperature T_A and a superconducting material B having a superconducting transition temperature T_B are joined,
An electronic device characterized in that, at a temperature T such that T_A<T<T_B, the magnitude of the current passing through materials A and B is controlled by the magnitude of the current introduced using separate terminals and passing through material B. . 4. An electronic device according to claim 3, characterized in that superconducting ceramics are used as the superconducting material.