JPH05291025A - Magnetic device - Google Patents

Abstract

PURPOSE:To provide a temperature compensation for the resonance frequency of a magnetostatic-wave element. CONSTITUTION:In a magnetic device to be used for application of a bias magnetic field to a magnetostatic-wave element 1 which is constructed by forming a YIG thin film on a non-magnetic substrate by a liquid-phase epitaxial growth method and a magnetostatic wave is excited in the internal part of the film, the wave is propagated and resonance is set up, two or more types of permanent magnets 2 and 3, having different temperature coefficients, are used as the permanent magnet in the magnetic device.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic device of a magnetostatic wave device utilizing magnetic spin resonance of YIG, and performs temperature compensation in a wide temperature range at an arbitrary resonance frequency.

[0002]

2. Description of the Related Art GGG (gadolinium gallium gas)
(Net) A YIG (yttrium, iron, garnet) single crystal magnetic thin film grown by liquid phase epitaxial growth on a non-magnetic substrate is processed into a desired shape, and a magnetostatic wave is generated inside the magnetic film by a microwave using a microstrip line or the like. Various magnetostatic wave devices for microwaves that excite, propagate, and resonate are proposed. Such a magnetostatic wave element has a very high selectivity Q.
In addition, the resonance frequency can be widely changed by changing the strength of the bias magnetic field applied to the magnetic thin film. As a magnetostatic wave device for microwaves with high selectivity, a device using spin resonance of a YIG single crystal sphere has been conventionally used, but there is a drawback that the resonance point disappears when the ambient temperature becomes low. It was a big obstacle because it was necessary to put it inside and prevent the temperature from dropping. Also,
It is difficult to process the YIG single crystal into a spherical shape, and there is a problem that the processing cost becomes high, so that the practical fields have been limited. on the other hand,
The magnetostatic wave device using the YIG thin film can be used even at a low temperature due to its resonance mechanism, and the device can be made relatively inexpensive because it is manufactured by the photoetching technique. When a bias magnetic field is externally applied to such a magnetostatic wave element in a direction perpendicular to the YIG thin film, magnetostatic forward volume waves are excited. The resonance frequency fo is the internal magnetic field of the YIG thin film to H
i, saturation magnetization 4πMs, gyromagnetic coefficient γ, and external magnetic field strength Ho, the demagnetizing field due to the film surface is taken into consideration.

## EQU1 ## It is represented by fo = γHi = γ (Ho-4πMs). Here, since 4πMs has a temperature characteristic,
When the temperature changes, the resonance frequency fo also changes. Therefore, temperature compensation is performed by adjusting the temperature coefficient of the permanent magnet for generating the bias magnetic field as described below. Number 1
If both sides of are differentiated by temperature T

[Equation 2] To get Here, since the frequency does not change with temperature, the left side of Equation 2 becomes 0

[Equation 3] To get Therefore, if the temperature coefficient of the permanent magnet required for temperature compensation at 9 GHz is αH, then 4πMs
= 0.176 tesla, temperature coefficient of 4πMs is -0.22
4% / ℃, and the strength of the external magnetic field is 0.4974 from the number 1
Because it's Tesla

[Equation 4] Becomes

[0003]

However, as a practical problem, the types of permanent magnet materials that can be industrially obtained are limited, and YIG thin films are used to keep the resonance frequency of the magnetostatic wave device constant over a wide temperature range. Even if an attempt is made to obtain the temperature coefficient required for the permanent magnet in consideration of the temperature characteristics of the saturation magnetization, it is difficult to obtain a permanent magnet having the required temperature coefficient because a known magnet is used. An object of the present invention is to provide a magnetic device capable of temperature compensation in a wide temperature range at an arbitrary resonance frequency of a magnetostatic wave element.

[0004]

The present invention provides a magnetic thin film formed on a non-magnetic substrate, a structure for exciting, propagating, and resonating a magnetostatic wave with a microwave in the magnetic thin film, and the magnetic thin film. In order to apply a magnetic field to the permanent magnets, permanent magnets are attached to the opposite ends or both ends, and in the magnetic field generating means made of a soft magnetic material, a coil is wound around the middle part. It is a magnetic device characterized by using a magnet. That is,
In the prior art, for example, a magnet known as a magnet having a temperature coefficient αH = −0.079% / ° C. required for a magnet at a resonance frequency of 9 GHz, neodymium / iron / boron permanent magnet (temperature coefficient: −0.13% / ℃) and samarium-cobalt permanent magnets (temperature coefficient: -0.035% / ° C), etc., even if a samarium-cobalt permanent magnet close to αH is selected, there is a difference of about 0.04% / ° C from αH. No compensation is possible. Therefore, in the present invention, a method has been found in which two or more known magnets are used in combination at a certain ratio so as to meet αH. In the above example, if neodymium / iron / boron permanent magnets and samarium / cobalt permanent magnets are used at a thickness of 7: 8, a temperature coefficient of -0.0793% / ° C is obtained, and the temperature is very close to αH. Since the coefficient can be obtained, the temperature compensation accuracy is significantly improved as compared with the conventional case.

[0005]

EXAMPLES The present invention will be described in detail below based on examples. (Comparative Example) FIG. 2 is a diagram showing a magnetic device according to the prior art. A cross-sectional area of 200 is provided on both ends of the U-shaped soft magnetic material 4.
A samarium-cobalt permanent magnet 8 having a size of mm ² , a thickness of 1.5 mm, and a residual magnetic flux density of 1 tesla is installed, and a YI formed on the GGG substrate by LPE in the space between the permanent magnets 8.
A magnetostatic wave device 1 having a G thin film, a microstrip line for entering and leaving a microwave, and a resonance structure is placed. A coil 5 for changing the resonance frequency is installed in the middle of the soft magnetic material 4, and a current flows through the coil 5 by the coil control power supply 6. When the temperature characteristic of the resonant frequency of the magnetostatic wave device 1 at room temperature of 9 GHz was measured in the magnetic device of FIG. 2, the resonant frequency changed by about ± 200 MHz as shown in FIG. (Embodiment 1) FIG. 1A is a diagram showing an embodiment of the present invention. A cross-sectional area 2 is formed above the end of the U-shaped soft magnetic material 4.
A samarium-cobalt permanent magnet 2 having a diameter of 00 mm ² , a thickness of 1.6 mm, and a residual magnetic flux density of 1 tesla is provided on the lower side with a cross-sectional area of 20.
A neodymium / iron / boron permanent magnet 3 having a thickness of 0 mm ² , a thickness of 1.4 mm, and a residual magnetic flux density of 1 tesla is installed, and is formed by LPE on a GGG substrate in a space between the permanent magnet 2 and the permanent magnet 3. A magnetostatic wave element 1 having a YIG thin film, a microstrip line for entering and leaving microwaves, and a resonance structure is placed. A coil 5 for changing the resonance frequency is installed in the middle of the soft magnetic material 4, and a current flows through the coil 5 by the coil control power supply 6. When the temperature characteristic of the resonance frequency of the magnetostatic wave element 1 at room temperature of 9 GHz was measured in the magnetic device of FIG. 1 (a), the change in resonance frequency was about ± 10 MHz as shown in FIG. It was Further, in this embodiment, as the permanent magnet in the magnetic device, the samarium / cobalt permanent magnet is installed on the upper side, and the neodymium / iron / boron permanent magnet is installed on the lower side. Even if the positions are reversed, the same temperature compensation effect can be obtained. (Embodiment 2) Next, FIG. 1B shows an embodiment of the present invention. A cross-sectional area of 20 is provided above the end of the U-shaped soft magnetic material 4.
Neodymium having a cross-sectional area of 200 mm ² , a thickness of 1.4 mm and a residual magnetic flux density of 1 Tesla is placed in contact with the permanent magnet 2 having a samarium-cobalt permanent magnet 2 of 0 mm ² , a thickness of 1.6 mm and a residual magnetic flux density of 1 Tesla.・ Iron / boron permanent magnet 3
Is installed. Further, a magnetic pole 7 made of a soft magnetic material having the same cross-sectional area and thickness as the permanent magnet 2 and the permanent magnet 3 is installed at the place where the permanent magnet 3 was installed in FIG. 1A. Then, the magnetostatic wave device 1 having a resonant structure with a YIG thin film formed by LPE on a GGG substrate and a microstrip line for allowing microwaves to enter and leave the gap between the permanent magnets 2 and 3 and the magnetic pole 7.
Is placed. A coil 5 for changing the resonance frequency is installed in the middle of the soft magnetic material 4, and a current flows through the coil 5 by the coil control power supply 6. In the magnetic device of FIG. 1B, the magnetostatic wave element 1 has a resonance frequency of 9 G at room temperature.
When the temperature characteristic of the resonance frequency at Hz was measured,
The change in resonance frequency was about ± 10 MHz. Further, even if the permanent magnets 2 and 3 on the upper side of the magnetostatic wave element 1 are installed with their positions reversed with each other in this embodiment, the same temperature compensation effect can be obtained.

[0006]

According to the present invention, in a magnetic device for applying a bias magnetic field to a magnetostatic wave element, temperature compensation can be realized in a wide range at any resonance frequency of the magnetostatic wave element.

[Brief description of drawings]

1A and 1B are explanatory views showing an embodiment according to the present invention.

FIG. 2 is an explanatory diagram according to a conventional technique.

FIG. 3 is a diagram showing a change in resonance frequency with respect to temperature according to a conventional technique.

FIG. 4 is a diagram showing changes in resonance frequency with temperature according to the present invention.

[Explanation of symbols]

 1 Magnetostatic Wave Element 2 Permanent Magnet 3 Permanent Magnet Alloy 8 Permanent Magnet Alloy 4 Soft Magnetic Material 5 Coil 6 Coil Control Power Supply 7 Magnetic Pole

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Anei Uegami 5200 Mikashiri, Kumagaya-shi, Saitama Hitachi Metals Co., Ltd.

Claims (3)

[Claims] 1. A magnetic thin film formed on a non-magnetic substrate, a structure for exciting, propagating, and resonating a magnetostatic wave with microwaves inside the magnetic thin film, and opposing ends for applying a magnetic field to the magnetic thin film. In the magnetic field generating means made of a soft magnetic material, in which a permanent magnet is attached to each part or both ends and a coil is wound in the middle part, two or more kinds of permanent magnets having different temperature coefficients are used for the permanent magnet. Magnetic device. 2. A magnetic thin film formed on a non-magnetic substrate, a structure for exciting, propagating, and resonating a magnetostatic wave with microwaves inside the magnetic thin film, and opposite ends for applying a magnetic field to the magnetic thin film. In a magnetic field generating means made of a soft magnetic material, in which a permanent magnet is attached to a portion or both ends and a coil is wound around an intermediate portion, the permanent magnet according to claim 1 is provided with a certain ratio so as to cancel the temperature coefficient of the magnetic thin film. A magnetic device characterized by being used in combination. 3. A magnetic thin film formed on a non-magnetic substrate, a structure for exciting, propagating, and resonating a magnetostatic wave with microwaves inside the magnetic thin film, and opposite ends for applying a magnetic field to the magnetic thin film. In the magnetic field generating means made of a soft magnetic material, in which a permanent magnet is attached to each part or both ends and a coil is wound in the middle part, a samarium-cobalt permanent magnet and a neodymium-iron-boron permanent magnet are used as the permanent magnet according to claim 2. A magnetic device characterized by being used.