JPH05289308A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPH05289308A JPH05289308A JP9405692A JP9405692A JPH05289308A JP H05289308 A JPH05289308 A JP H05289308A JP 9405692 A JP9405692 A JP 9405692A JP 9405692 A JP9405692 A JP 9405692A JP H05289308 A JPH05289308 A JP H05289308A
- Authority
- JP
- Japan
- Prior art keywords
- phase shift
- opaque film
- entire surface
- exposure light
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は,フォトマスクの製造方
法,特に位相シフトマスクの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask manufacturing method, and more particularly to a phase shift mask manufacturing method.
【0002】近年,デバイス・パターンの微細化に伴
い,ウエハプロセスには,安定した微細パターンを低コ
ストで形成する技術が要求されている。そのため,投影
露光装置の解像限界を越えた微細パターンを安定して形
成する技術が必要になっている。In recent years, with the miniaturization of device patterns, a technique for forming stable fine patterns at low cost is required for the wafer process. Therefore, there is a need for a technique for stably forming a fine pattern that exceeds the resolution limit of the projection exposure apparatus.
【0003】微細パターンを安定して形成するのに有効
な技術の一つに,位相シフト法がある。これは,透過型
マスク基板上に,屈折率の異なる透明パターンを配置す
ることにより,フォトマスクを透過する露光光に位相差
を作り出し,その相互干渉によってパターン投影像のコ
ントラストを向上させる手法である。A phase shift method is one of the effective techniques for stably forming a fine pattern. This is a method of arranging transparent patterns having different refractive indexes on a transmissive mask substrate to create a phase difference in the exposure light transmitted through the photomask and improve the contrast of the pattern projection image by mutual interference. ..
【0004】[0004]
【従来の技術】従来の位相シフトマスクとして代表的な
ものに,クロムレス型位相シフトマスク(透過型位相シ
フトマスク)およびレベンソン型位相シフトマスクがあ
る。以下,両者について説明する。2. Description of the Related Art Typical conventional phase shift masks are a chromeless type phase shift mask (transmission type phase shift mask) and a Levenson type phase shift mask. Both will be described below.
【0005】(1)クロムレス型位相シフトマスク これは,不透明部分を全く持たず,互いに異なる位相を
持った透明パターンのみから成る位相シフトマスクであ
る。(1) Chromeless type phase shift mask This is a phase shift mask which has no opaque portion and is composed of only transparent patterns having mutually different phases.
【0006】(2)レベンソン型位相シフトマスク これは,互いに反転している位相を有する透明部が,不
透明部を挟んで交互に並んでいる位相シフトマスクであ
る。(2) Levenson type phase shift mask This is a phase shift mask in which transparent portions having mutually inverted phases are alternately arranged with an opaque portion sandwiched therebetween.
【0007】[0007]
【発明が解決しようとする課題】従来のクロムレス型位
相シフトマスクには,異なる位相を持つパターンの境界
にある段差を垂直形状に形成するのが困難であり,その
結果,段差側壁における露光光の透過率に不均一が生
じ,ウエハ・パターンの幅制御の安定性を低下させる,
という問題があった。In the conventional chromeless type phase shift mask, it is difficult to form a step at the boundary of patterns having different phases into a vertical shape, and as a result, the exposure light on the side wall of the step is changed. Non-uniformity of the transmittance occurs, which reduces the stability of the wafer pattern width control.
There was a problem.
【0008】従来のレベンソン型位相シフトマスクに
は,位相を異にするパターンを形成するのに位置合わせ
工程を必要とするため,精度良く製造するのが困難であ
る,という問題があった。The conventional Levenson-type phase shift mask has a problem that it is difficult to manufacture it accurately because it requires a positioning process to form patterns having different phases.
【0009】以上のように,従来の位相シフトマスクで
は,位相シフト法の安定した適用ができず,その効果を
充分に発揮できないでいた。本発明は,上記の問題点を
解決して,不透明パターンを位置合わせ工程無しで自己
整合的に形成できるようにして,マスクパターンを制御
性良く,安定的に形成できるようにした,フォトマスク
の製造方法,特に位相シフトマスクの製造方法を提供す
ることを目的とする。As described above, in the conventional phase shift mask, the phase shift method cannot be stably applied, and the effect cannot be sufficiently exhibited. SUMMARY OF THE INVENTION The present invention solves the above problems and enables an opaque pattern to be formed in a self-aligned manner without a step of aligning the mask pattern so that a mask pattern can be formed stably with good controllability. It is an object of the present invention to provide a manufacturing method, particularly a method for manufacturing a phase shift mask.
【0010】[0010]
【課題を解決するための手段】上記の目的を達成するた
めに,本発明に係るフォトマスクの製造方法は,次のよ
うに構成する。In order to achieve the above object, the method of manufacturing a photomask according to the present invention is configured as follows.
【0011】(1)透過する露光光に位相差を与え,透
過露光光相互の干渉を利用して解像度の向上を図る位相
シフトマスクの製造方法であって,透明基板の表面に,
位相シフト部のパターンを形成する工程と,全面に,不
透明膜を堆積する工程と,全面に,異方性エッチングを
施して,位相シフト部の側壁部のみに不透明膜を残す工
程とを含むように構成する。(1) A method of manufacturing a phase shift mask for imparting a phase difference to the transmitted exposure light and improving the resolution by utilizing the mutual interference of the transmitted exposure light.
Including a step of forming a pattern of the phase shift portion, a step of depositing an opaque film on the entire surface, and a step of performing anisotropic etching on the entire surface and leaving the opaque film only on the side wall portion of the phase shift portion. To configure.
【0012】(2)透過する露光光に位相差を与え,透
過露光光相互の干渉を利用して解像度の向上を図り,位
相シフト部パターンのみから成る位相シフトマスクの製
造方法であって,透明基板の表面に,所定の幅の溝を所
定の間隔で形成する工程と,全面に,不透明膜を堆積す
る工程と,全面に,異方性エッチングを施して,前記溝
の側壁部のみに不透明膜を残す工程とを含むように構成
する。(2) A method of manufacturing a phase shift mask consisting of only a phase shift pattern, which gives a phase difference to the transmitted exposure light and utilizes mutual interference of the transmitted exposure light to improve the resolution. A step of forming grooves with a predetermined width at a predetermined interval on the surface of the substrate, a step of depositing an opaque film on the entire surface, and an anisotropic etching on the entire surface to make the side walls of the groove opaque. And a step of leaving the film.
【0013】(3)透過する露光光に位相差を与え,透
過露光光相互の干渉を利用して解像度の向上を図り,隣
り合う開口部の一方に位相シフト部を設けた位相シフト
マスクの製造方法であって,(a)透明基板の表面に,
所定の幅の溝を所定の間隔で形成する工程と,(b)全
面に,不透明膜を堆積する工程と,(c)全面に,異方
性エッチングを施して,前記溝の側壁部のみに不透明膜
を残す工程と,(d)前記工程(b)および工程(c)
を繰り返し,前記溝の側壁部に残された不透明膜を所定
の厚さにする工程とを含むように構成する。(3) Manufacture of a phase shift mask in which a phase difference is imparted to the transmitted exposure light and the mutual interference of the transmitted exposure light is utilized to improve the resolution, and a phase shift portion is provided in one of the adjacent openings. A method comprising: (a) a surface of a transparent substrate,
A step of forming grooves having a predetermined width at predetermined intervals, (b) a step of depositing an opaque film on the entire surface, and (c) anisotropic etching on the entire surface so that only the side wall portion of the groove is formed. A step of leaving an opaque film, and (d) the steps (b) and (c)
Is repeated to make the opaque film left on the side wall of the groove a predetermined thickness.
【0014】[0014]
【作用】図1は,本発明の基本構成を示す図である。以
下,同図を用いて,本発明の作用を工程順に説明する。1 is a diagram showing the basic configuration of the present invention. Hereinafter, the operation of the present invention will be described in the order of steps with reference to FIG.
【0015】[工程1,図1(a)]透明基板11上
に,位相シフト部12a,12b,12cのパターンを
形成する。[Step 1, FIG. 1A] The pattern of the phase shift portions 12a, 12b, 12c is formed on the transparent substrate 11.
【0016】[工程2,図1(b)]全面に,不透明膜
13を堆積する。 [工程3,図1(c)]全面に,異方性エッチングを施
して,位相シフト部12a,12b,12cの側壁部の
みに,不透明膜13a,13b,13c,13d,13
e,13fを残す。[Step 2, FIG. 1B] An opaque film 13 is deposited on the entire surface. [Step 3, FIG. 1 (c)] Anisotropic etching is applied to the entire surface so that the opaque films 13a, 13b, 13c, 13d, 13 are formed only on the side wall portions of the phase shift portions 12a, 12b, 12c.
Leave e and 13f.
【0017】本発明に係るクロムレス型位相シフトマス
クは,以上の各工程を経て完成する。図2は,本発明に
よるクロムレス型位相シフトマスク,および従来のクロ
ムレス型位相シフトマスクの透過光の様子を示す図であ
る。The chromeless type phase shift mask according to the present invention is completed through the above steps. FIG. 2 is a diagram showing a state of transmitted light of the chromeless type phase shift mask according to the present invention and the conventional chromeless type phase shift mask.
【0018】図2(b)に示すように,従来のクロムレ
ス型位相シフトマスクは,位相シフト部22a,22b
のみでパターンが形成されている。その結果,位相シフ
ト部22a,22bの段差を垂直形状に形成するのが困
難であり,段差側壁における露光光の透過率に不均一が
生じ,ウエハ・パターンの幅制御の安定性を低下させ
る,という問題があったが,本発明による位相シフトマ
スクは,位相シフト部22a,22bの側壁部に,不透
明膜23a,23b,23c,23dが形成されている
ので,位相シフト部22a,22bの段差側壁における
透過率の不均一性に起因する透過光への影響が緩和され
る。As shown in FIG. 2B, the conventional chromeless type phase shift mask has phase shift parts 22a and 22b.
The pattern is formed only by itself. As a result, it is difficult to form the steps of the phase shift portions 22a and 22b in a vertical shape, and the transmittance of the exposure light on the sidewalls of the steps becomes uneven, which deteriorates the stability of the width control of the wafer pattern. However, in the phase shift mask according to the present invention, since the opaque films 23a, 23b, 23c and 23d are formed on the side wall portions of the phase shift portions 22a and 22b, the steps of the phase shift portions 22a and 22b are formed. The influence on the transmitted light due to the non-uniformity of the transmittance on the side wall is mitigated.
【0019】また,従来のクロムレス型位相シフトマス
クでは,位相シフト部22a,22bのエッジ部で透過
露光光のコントラストが鋭すぎるが,本発明による位相
シフトマスクでは,位相シフト部22a,22bの側壁
部に形成された不透明膜23a,23b,23c,23
dの存在により,位相シフト部22a,22bのエッジ
部で透過露光光のコントラストが緩和されて,フォトレ
ジスト中におけるイメージ・パターン幅の制御が容易に
なる。その結果,リソグラフィ・マージンが向上する。Further, in the conventional chromeless type phase shift mask, the contrast of the transmitted exposure light is too sharp at the edge portions of the phase shift portions 22a and 22b. However, in the phase shift mask according to the present invention, the side walls of the phase shift portions 22a and 22b. Films 23a, 23b, 23c, 23 formed on the
Due to the presence of d, the contrast of the transmitted exposure light is relaxed at the edge portions of the phase shift portions 22a and 22b, and the control of the image pattern width in the photoresist becomes easy. As a result, the lithography margin is improved.
【0020】一方,本発明によるレベンソン型位相シフ
トマスクは,前記の工程2(図1(b))の不透明膜1
3の堆積,および工程3(図1(c))の全面異方性エ
ッチングを数回繰り返して,位相シフト部22a,22
bの側壁部に所定の厚さの不透明膜23a,23b,2
3c,23dを形成することにより,位置合わせ工程無
しで自己整合的に製造される。でき上がりマスクを図3
に示す。図中,31は透明基板,32は位相シフト部,
33は不透明膜である。On the other hand, the Levenson-type phase shift mask according to the present invention has the opaque film 1 of the above-mentioned step 2 (FIG. 1B).
3 and the entire anisotropic etching of step 3 (FIG. 1C) are repeated several times to obtain phase shift portions 22a, 22
The opaque films 23a, 23b, 2 having a predetermined thickness on the side wall of b
By forming 3c and 23d, it is manufactured in a self-aligned manner without a positioning process. Figure 3 of the finished mask
Shown in. In the figure, 31 is a transparent substrate, 32 is a phase shift part,
33 is an opaque film.
【0021】[0021]
〔実施例1〕本発明に係るクロムレス型位相シフトマス
クの製造方法を工程順に説明する。[Embodiment 1] A method for manufacturing a chromeless phase shift mask according to the present invention will be described in the order of steps.
【0022】[工程1,図4]石英ガラス基板41上
に,幅a=5.0μmの溝42a,42bをb=5.0
μm間隔に,EB(電子ビーム)描画法および異方性エ
ッチングによって形成する。[Step 1, FIG. 4] Grooves 42a and 42b having a width a = 5.0 μm are formed on the quartz glass substrate 41 at b = 5.0.
The EB (electron beam) drawing method and anisotropic etching are used to form the pattern at intervals of μm.
【0023】溝42a,42bの側壁は垂直で,深さd
は,露光光の位相が反転するのに必要な値に設定する。
例えば,露光光にi線(波長λ=0.365μm)を使
用する場合,石英の屈折率n=1.47であるから, d=λ/2(n−1)=0.389μm に設定する。The sidewalls of the grooves 42a and 42b are vertical and have a depth d.
Is set to the value required to invert the phase of the exposure light.
For example, when the i-line (wavelength λ = 0.365 μm) is used as the exposure light, the refractive index n of the quartz is n = 1.47, so d = λ / 2 (n−1) = 0.389 μm is set. ..
【0024】[工程2,図5]全面に,スパッタ法によ
り,クロム膜43を0.1μmの厚さに堆積する。 [工程3,図6]全面に,RIE( Reactive Ion Etch
ing ) 法により異方性エッチングを施す。[Step 2, FIG. 5] A chromium film 43 is deposited to a thickness of 0.1 μm on the entire surface by sputtering. [Process 3, Figure 6] RIE (Reactive Ion Etch)
ing) method is used for anisotropic etching.
【0025】RIEのエッチング条件は,次のとおりで
ある。 RFパワー ;300W RF周波数 ;13.56MHz チャンバー内圧力 ;0.05Torr エッチャントガス ;CCl4 :O2 =5:1 この条件で,クロムと石英ガラスとの選択比は高く,エ
ッチングは石英ガラス基板41で停止する。The RIE etching conditions are as follows. RF power; 300 W RF frequency; 13.56 MHz Chamber pressure; 0.05 Torr etchant gas; CCl 4 : O 2 = 5: 1 Under these conditions, the selection ratio of chromium and quartz glass is high, and the etching is performed on the quartz glass substrate 41. Stop at.
【0026】この結果,溝42a,42bの側壁部のみ
に,クロム膜43a,43b,43c,43dが残存す
る。以上の各工程を経て,本発明に係るクロムレス型位
相シフトマスクが完成する。これを5分の1縮小投影露
光装置でウエハ上に投影すると,1.0μmピッチのダ
ーク・コントラストが形成される。このダーク・コント
ラストにより,ポジ型レジストならば残しパターンが形
成され,ネガ型レジストならば抜きパターンが形成され
る。As a result, the chromium films 43a, 43b, 43c, 43d remain only on the side walls of the grooves 42a, 42b. The chromeless phase shift mask according to the present invention is completed through the above steps. When this is projected on a wafer by a 1/5 reduction projection exposure apparatus, a dark contrast of 1.0 μm pitch is formed. Due to this dark contrast, a residual pattern is formed in the case of a positive resist, and a blank pattern is formed in the case of a negative resist.
【0027】〔実施例2〕本発明に係るレベンソン型位
相シフトマスクの製造方法を工程順に説明する。 [工程1,図7]石英ガラス基板51上に,幅a=4.
5μmの溝52a,52bをb=1.5μm間隔に,E
B描画法および異方性エッチングによって形成する。[Embodiment 2] A method for manufacturing a Levenson-type phase shift mask according to the present invention will be described in the order of steps. [Step 1, FIG. 7] Width a = 4.
5 μm grooves 52a and 52b are provided at intervals of b = 1.5 μm, and E
It is formed by the B drawing method and anisotropic etching.
【0028】溝52a,52bの側壁は垂直で,深さd
は,露光光の位相が反転するのに必要な値に設定する。
例えば,露光光にi線(波長λ=0.365μm)を使
用する場合,石英の屈折率n=1.47であるから, d=λ/2(n−1)=0.389μm に設定する。The side walls of the grooves 52a and 52b are vertical and have a depth d.
Is set to the value required to invert the phase of the exposure light.
For example, when the i-line (wavelength λ = 0.365 μm) is used as the exposure light, the refractive index n of the quartz is n = 1.47, so d = λ / 2 (n−1) = 0.389 μm is set. ..
【0029】[工程2,図8]全面に,スパッタ法によ
り,クロム膜53を堆積する。 [工程3,図9]全面に,RIE法により異方性エッチ
ングを施す。[Step 2, FIG. 8] A chromium film 53 is deposited on the entire surface by a sputtering method. [Step 3, FIG. 9] Anisotropic etching is applied to the entire surface by RIE.
【0030】RIEのエッチング条件は,次のとおりで
ある。 RFパワー ;300W RF周波数 ;13.56MHz チャンバー内圧力 ;0.05Torr エッチャントガス ;CCl4 :O2 =5:1 この条件で,クロムと石英ガラスとの選択比は高く,エ
ッチングは石英ガラス基板51で停止する。The RIE etching conditions are as follows. RF power; 300 W RF frequency; 13.56 MHz Chamber pressure; 0.05 Torr etchant gas; CCl 4 : O 2 = 5: 1 Under these conditions, the selection ratio of chromium and quartz glass is high, and the etching is performed on the quartz glass substrate 51. Stop at.
【0031】この結果,溝52a,52b,52cの側
壁部のみに,クロム膜53a,53b,53c,53
d,53e,53fが残存する。 [工程4,図8,図9,図10]工程2(図8)のクロ
ム膜53の堆積および工程3(図9)の全面異方性エッ
チングを,溝52a,52b,52cの側壁部に残存す
るクロム膜53a,53b,53c,53d,53e,
53fの厚さがc=1.5μmになるまで繰り返す。As a result, the chromium films 53a, 53b, 53c, 53 are formed only on the side walls of the grooves 52a, 52b, 52c.
d, 53e and 53f remain. [Step 4, FIG. 8, FIG. 9, FIG. 10] The deposition of the chromium film 53 in step 2 (FIG. 8) and the anisotropic etching in step 3 (FIG. 9) are performed on the side walls of the grooves 52a, 52b, 52c. The remaining chromium films 53a, 53b, 53c, 53d, 53e,
Repeat until the thickness of 53f is c = 1.5 μm.
【0032】その結果,図10に示すように,1.5μ
m幅のレベンソン型位相シフトマスクが完成する。これ
を5分の1縮小投影露光装置でウエハ上に転写すると,
0.3μmのL&S(ライン・アンド・スペース)パタ
ーンが形成される。As a result, as shown in FIG.
An m-width Levenson-type phase shift mask is completed. When this is transferred onto a wafer with a 1/5 reduction projection exposure apparatus,
An L & S (line and space) pattern of 0.3 μm is formed.
【0033】[0033]
【発明の効果】本発明によれば,不透明パターンを位置
合わせ工程無しで自己整合的に形成できるので,位相シ
フトマスクの製造が容易になる。According to the present invention, since the opaque pattern can be formed in a self-aligned manner without the step of aligning, the phase shift mask can be easily manufactured.
【0034】また,位相シフト部の境界上に光遮蔽部を
形成できるため,露光マージンの向上を図ることができ
る。したがって,リソグラフィ・プロセスの安定化に寄
与するところが大きい。Further, since the light shielding portion can be formed on the boundary of the phase shift portion, the exposure margin can be improved. Therefore, it greatly contributes to the stabilization of the lithography process.
【図1】本発明の基本構成を示す図である。FIG. 1 is a diagram showing a basic configuration of the present invention.
【図2】透過光の様子を示す図である。FIG. 2 is a diagram showing a state of transmitted light.
【図3】本発明によるレベンソン型位相シフトマスクを
示す図である。FIG. 3 is a diagram showing a Levenson-type phase shift mask according to the present invention.
【図4】実施例1の工程1を示す図である。FIG. 4 is a diagram showing a process 1 of Example 1.
【図5】実施例1の工程2を示す図である。FIG. 5 is a diagram showing a process 2 of Example 1.
【図6】実施例1の工程3を示す図である。FIG. 6 is a diagram showing a process 3 of Example 1.
【図7】実施例2の工程1を示す図である。FIG. 7 is a diagram showing a process 1 of Example 2.
【図8】実施例2の工程2を示す図である。FIG. 8 is a diagram showing a process 2 of Example 2.
【図9】実施例2の工程3を示す図である。FIG. 9 is a diagram showing a process 3 of Example 2.
【図10】実施例2のでき上がり図である。FIG. 10 is a finished drawing of the second embodiment.
11 透明基板 12 位相シフト部 13 不透明膜 11 transparent substrate 12 phase shift part 13 opaque film
Claims (3)
光光相互の干渉を利用して解像度の向上を図る位相シフ
トマスクの製造方法であって,透明基板の表面に,位相
シフト部のパターンを形成する工程と,全面に,不透明
膜を堆積する工程と,全面に,異方性エッチングを施し
て,位相シフト部の側壁部のみに不透明膜を残す工程と
を含むことを特徴とするフォトマスクの製造方法。1. A method of manufacturing a phase shift mask, wherein a phase difference is imparted to transmitted exposure light and the mutual interference of transmitted exposure light is used to improve resolution. The method is characterized by including a step of forming a pattern, a step of depositing an opaque film on the entire surface, and a step of performing anisotropic etching on the entire surface to leave the opaque film only on the side wall of the phase shift section. Photomask manufacturing method.
光光相互の干渉を利用して解像度の向上を図り,位相シ
フト部パターンのみから成る位相シフトマスクの製造方
法であって,透明基板の表面に,所定の幅の溝を所定の
間隔で形成する工程と,全面に,不透明膜を堆積する工
程と,全面に,異方性エッチングを施して,前記溝の側
壁部のみに不透明膜を残す工程とを含むことを特徴とす
るフォトマスクの製造方法。2. A method of manufacturing a phase shift mask comprising a phase shift pattern only, wherein a phase difference is imparted to the transmitted exposure light and the mutual interference of the transmitted exposure light is utilized to improve the resolution. A step of forming grooves having a predetermined width at predetermined intervals on the surface of, and a step of depositing an opaque film on the entire surface, and performing anisotropic etching on the entire surface to form an opaque film only on the side wall portion of the groove. And a step of leaving the photomask.
光光相互の干渉を利用して解像度の向上を図り,隣り合
う開口部の一方に位相シフト部を設けた位相シフトマス
クの製造方法であって,(a)透明基板の表面に,所定
の幅の溝を所定の間隔で形成する工程と,(b)全面
に,不透明膜を堆積する工程と,(c)全面に,異方性
エッチングを施して,前記溝の側壁部のみに不透明膜を
残す工程と,(d)前記工程(b)および工程(c)を
繰り返し,前記溝の側壁部に残された不透明膜を所定の
厚さにする工程とを含むことを特徴とするフォトマスク
の製造方法。3. A method of manufacturing a phase shift mask in which a phase difference is provided to transmitted exposure light, resolution is improved by utilizing mutual interference of transmitted exposure light, and a phase shift portion is provided in one of adjacent openings. In addition, (a) a step of forming grooves of a predetermined width at a predetermined interval on the surface of the transparent substrate, (b) a step of depositing an opaque film on the entire surface, and (c) an anisotropic method on the entire surface. Of the opaque film left only on the side wall of the groove and (d) the steps (b) and (c) are repeated to remove the opaque film left on the side wall of the groove to a predetermined value. And a step of reducing the thickness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9405692A JPH05289308A (en) | 1992-04-14 | 1992-04-14 | Production of photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9405692A JPH05289308A (en) | 1992-04-14 | 1992-04-14 | Production of photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05289308A true JPH05289308A (en) | 1993-11-05 |
Family
ID=14099891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9405692A Withdrawn JPH05289308A (en) | 1992-04-14 | 1992-04-14 | Production of photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05289308A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030001643A (en) * | 2001-06-25 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for manufacturing phase shift mask |
JP2006171335A (en) * | 2004-12-15 | 2006-06-29 | Samsung Electronics Co Ltd | Phase shift mask and method for forming pattern |
KR100954349B1 (en) * | 2002-04-29 | 2010-04-21 | 삼성전자주식회사 | Method of fabricating high density sub-lithographic features on a substrate |
-
1992
- 1992-04-14 JP JP9405692A patent/JPH05289308A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030001643A (en) * | 2001-06-25 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for manufacturing phase shift mask |
KR100954349B1 (en) * | 2002-04-29 | 2010-04-21 | 삼성전자주식회사 | Method of fabricating high density sub-lithographic features on a substrate |
JP2006171335A (en) * | 2004-12-15 | 2006-06-29 | Samsung Electronics Co Ltd | Phase shift mask and method for forming pattern |
JP4574343B2 (en) * | 2004-12-15 | 2010-11-04 | 三星電子株式会社 | Phase shift mask and pattern forming method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990706 |