JPH0527504Y2 - - Google Patents
Info
- Publication number
- JPH0527504Y2 JPH0527504Y2 JP1988122273U JP12227388U JPH0527504Y2 JP H0527504 Y2 JPH0527504 Y2 JP H0527504Y2 JP 1988122273 U JP1988122273 U JP 1988122273U JP 12227388 U JP12227388 U JP 12227388U JP H0527504 Y2 JPH0527504 Y2 JP H0527504Y2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- vertically movable
- movable nozzle
- gas hole
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003575 carbonaceous material Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 7
- 210000002381 plasma Anatomy 0.000 description 17
- 239000007789 gas Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
この考案は、例えば合成ダイヤモンドのような
結晶膜を基体面に気相析出させるために用いる高
周波プラズマトーチ用のノズルに関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a nozzle for a high-frequency plasma torch used for vapor-phase deposition of a crystal film such as synthetic diamond on a substrate surface.
従来、高周波プラズマトーチは第３図に示すよ
うに、周辺部に高周波電源１に連結するワークコ
イル２、上端部に反応ガス供給装置３とバルブ
４，５，６，７を介して各接続する銅製のノズル
筒８と、下部に基体９を載置した支持具１０およ
び排気装置１１を備える石英製のプラズマ発生室
１２とから構成されている。
Conventionally, as shown in FIG. 3, a high-frequency plasma torch has a work coil 2 connected to a high-frequency power source 1 at the periphery, and a reactant gas supply device 3 connected to the upper end via valves 4, 5, 6, and 7. It consists of a nozzle tube 8 made of copper, a plasma generation chamber 12 made of quartz, and equipped with a support 10 on which a base 9 is placed at the bottom, and an exhaust device 11.
このうち、ノズル筒８は第４図および第５図の
とおり、反応ガス導入管１３、冷却水の導入管１
４ならびに導出管１４′を備える外筒１５と、中
心部に位置する上下可動ノズル１６とによる複重
管構造となつており、このノズル筒８に供給され
た反応用ガスは外筒１５に穿設されているシース
ガス孔１７、ラジアルガス孔１８、アクシヤルガ
ス孔１９、および上下可動ノズル１６のキヤリア
ガス用孔２０から系内に噴出する機構になつてい
る。 As shown in FIGS. 4 and 5, the nozzle tube 8 includes a reaction gas introduction pipe 13 and a cooling water introduction pipe 1.
It has a double-pipe structure consisting of an outer cylinder 15 equipped with 4 and an outlet pipe 14', and a vertically movable nozzle 16 located in the center, and the reaction gas supplied to this nozzle cylinder 8 is passed through the outer cylinder 15. The gas is ejected into the system from the provided sheath gas hole 17, radial gas hole 18, axial gas hole 19, and carrier gas hole 20 of the vertically movable nozzle 16.
第６図はノズル筒８にセツトされる上下可動ノ
ズル１６を縦断面図として示したもので、真中を
貫通するキヤリアガス用孔２０は二重管水冷ジヤ
ケツト２１によつて形成されている。このよう
に、従来構造の上下可動ノズル１６は水冷ジヤケ
ツトを付設した銅製のものであるため、以下のよ
うな問題点がある。
6 shows a vertical cross-sectional view of the vertically movable nozzle 16 set in the nozzle cylinder 8, in which the carrier gas hole 20 passing through the center is formed by a double-pipe water-cooled jacket 21. As described above, the vertically movable nozzle 16 of the conventional structure is made of copper and is equipped with a water-cooled jacket, and therefore has the following problems.
(1) 実質的に三重構造であり、キヤリアガス用孔
２０の直径が２〜３mmであつても外径は20〜25
mm程度に太くなる。このため、ノズル筒８の内
部設計に制約が加わる。(1) It has a substantially triple structure, and even if the diameter of the carrier gas hole 20 is 2 to 3 mm, the outer diameter is 20 to 25 mm.
It becomes thick to about mm. Therefore, restrictions are placed on the internal design of the nozzle tube 8.
(2) 冷却方式であるため、プラズマ中の熱エネル
ギーがうばわれてパワーロスを生じる。(2) Since it is a cooling method, the thermal energy in the plasma is wasted, resulting in power loss.
(3) 銅材を高度の技術を要する溶接等によつて複
雑な水冷ジヤケツトに形成する必要があり、コ
スト高となる。この考案は、これらの問題点を
解消し、水冷ジヤケツト方式を採らない上下可
動ノズルを備える高周波プラズマトーチ用ノズ
ルの提供を目的とするものである。(3) It is necessary to form the copper material into a complicated water-cooled jacket by welding, etc., which requires advanced technology, resulting in high costs. The purpose of this invention is to solve these problems and provide a nozzle for a high-frequency plasma torch equipped with a vertically movable nozzle that does not use a water-cooled jacket system.
上記の目的を達成するためのこの考案に係る高
周波プラズマトーチ用ノズルは、上端部に設置し
て系内に反応ガスを供給するための複重管構造を
有するノズル筒において、中心部に位置する上下
可動ノズルの少なくとも先端部分を炭素質材料に
よつて構成したものである。
The nozzle for a high-frequency plasma torch according to this invention to achieve the above object is located at the center of a nozzle tube having a double-pipe structure installed at the upper end to supply a reaction gas into the system. At least the tip portion of the vertically movable nozzle is made of carbonaceous material.
炭素質材料の対象にはアモルフアスの炭素から
黒鉛に至る全てのカーボン構成材が含まれるが、
特に材質的に気密性を備える高密度黒鉛材、ガラ
ス状カーボン材などが好適に用いられる。 Carbonaceous materials include all carbon constituent materials, from amorphous carbon to graphite.
In particular, high-density graphite material, glassy carbon material, etc., which are airtight, are preferably used.
この考案の上下可動ノズルはプラズマ中に挿入
される先端部分が極めて高温に耐える安定物性の
炭素質材料により構成されているから、冷却機構
を付設する必要なしにパイプ状としてそのまま使
用することが可能となる。また、炭素質材料は加
工性が良好なため、内外径の寸法調整は容易であ
るうえ、材質的にプラズマを安定化する作用があ
るので外乱に影響されやすい高周波プラズマに有
用である。
The tip of the vertically movable nozzle of this invention, which is inserted into the plasma, is made of a carbonaceous material with stable physical properties that can withstand extremely high temperatures, so it can be used as is as a pipe without the need for a cooling mechanism. becomes. Furthermore, since carbonaceous materials have good workability, it is easy to adjust the dimensions of the inner and outer diameters, and since the material has the effect of stabilizing plasma, it is useful for high-frequency plasmas that are easily affected by disturbances.
以下、この考案を図示の実施例に基づいて説明
する。
This invention will be explained below based on illustrated embodiments.
第１図は、この考案の上下可動ノズルを例示し
た一部切欠縦断面図で、２２はスエジロツク、２
３は中空円筒ノズル部位である。この例では中空
円筒ノズル部位２３の全体がガラス状カーボン材
２４で構成されており、内径３mm、肉厚２mmの形
状を有している。 FIG. 1 is a partially cutaway longitudinal sectional view illustrating the vertically movable nozzle of this invention, in which 22 is a swing lock;
3 is a hollow cylindrical nozzle portion. In this example, the entire hollow cylindrical nozzle portion 23 is made of a glassy carbon material 24, and has an inner diameter of 3 mm and a wall thickness of 2 mm.
第２図は別の実施態様を示す例で、中空円筒ノ
ズル部位２３の先端部分が高密度黒鉛材２４で構
成されている。中空円筒ノズル部位２３の基幹部
２５はステンレス鋼、銅等の金属材料で構成され
ている。この場合、ノズル筒８から突出する部分
はすべて炭素質材料とすることが望ましい。 FIG. 2 is an example showing another embodiment, in which the tip portion of the hollow cylindrical nozzle portion 23 is made of a high-density graphite material 24. The main body 25 of the hollow cylindrical nozzle portion 23 is made of a metal material such as stainless steel or copper. In this case, it is desirable that all parts protruding from the nozzle tube 8 be made of carbonaceous material.
これらの上下可動ノズル２３をノズル筒８にセ
ツトした高周波プラズマトーチを用い、圧力１気
圧、電源周波数4MHz、真空管入力80KVAの条件
によりCH4（1.5／min）およびAr（68／min）
＋H2（15／min）からなる反応ガス流入系内で
プラズマ放電を発生させてMo基体面（930℃）
にダイヤモンド膜を形成させたところ、極めて安
定したプラズマ発生状態が実現し、10分間で
25μmの均質なダイヤモンド結晶膜が得られた。 Using a high-frequency plasma torch with these vertically movable nozzles 23 set in the nozzle tube 8, CH 4 (1.5/min) and Ar (68/min) were generated under the conditions of a pressure of 1 atm, a power frequency of 4 MHz, and a vacuum tube input of 80 KVA.
Plasma discharge is generated in the reaction gas inflow system consisting of +H 2 (15/min) and Mo substrate surface (930℃)
When a diamond film was formed on the surface of
A 25 μm homogeneous diamond crystal film was obtained.
この考案によれば、次のような多様の実用的効
果がもたらされるから、合成ダイヤモンドをはじ
めTiC、ZrCなどの合成用として有用である。
This invention provides the following various practical effects and is therefore useful for synthesizing synthetic diamonds, TiC, ZrC, etc.
(1) 上下可動ノズルに水冷ジヤケツトが付設され
ていないから、ノズル筒全体の構造が簡単とな
り、プラズマのパワーロスも生じない。(1) Since no water-cooling jacket is attached to the vertically movable nozzle, the structure of the entire nozzle tube is simplified and no plasma power loss occurs.
(2) 上下可動ノズル外径を著しく小さくすること
ができるため、ガス流に影響を及ぼすことが少
ない。(2) Since the outer diameter of the vertically movable nozzle can be significantly reduced, it has little effect on gas flow.
(3) ノズルの先端部分が炭素質材料で構成されて
いるから、内径、外径、肉厚などの寸法調整が
容易にでき、また、材質的にプラズマを安定化
する作用があるので外乱の影響を受けることが
少なく、常に安定したプラズマを発生すること
ができる。(3) Since the tip of the nozzle is made of carbonaceous material, dimensions such as inner diameter, outer diameter, and wall thickness can be easily adjusted.Also, since the material has the effect of stabilizing plasma, it reduces disturbances. It is less affected and can always generate stable plasma.
第１図はこの考案を構成する上下可動ノズルの
実施例を示した一部切欠縦断面図、第２図は第１
図と別の実施態様を示した一部切欠縦断面図であ
る。第３図は高周波プラズマトーチを示した概略
説明図である。第４図は高周波プラズマトーチに
セツトされる従来のノズル筒を示した側面図、第
５図は第４図の上面図である。第６図は従来構造
の上下可動ノズルを示した縦断面図である。
１……高周波電源、２……ワークコイル、３…
…反応ガス供給装置、４，５，６，７……バル
ブ、８……ノズル筒、９……基体、１０……支持
具、１１……排気装置、１２……プラズマ発生
室、１３……反応ガス導入管、１４……冷却水導
入管、１４′……冷却水導出管、１５……外筒、
１６……上下可動ノズル、１７……シーガス孔、
１８……ラジアルガス孔、１９……アクシヤルガ
ス孔、２０……キヤリアガス用孔、２１……二重
管水冷ジヤケツト、２２……スエジロツク、２３
……中空円筒ノズル部位、２４……炭素質材料、
２５……基幹部。
Fig. 1 is a partially cut away vertical sectional view showing an embodiment of the vertically movable nozzle constituting this invention, and Fig.
FIG. 6 is a partially cutaway vertical cross-sectional view showing an embodiment different from the one shown in FIG. FIG. 3 is a schematic explanatory diagram showing a high frequency plasma torch. FIG. 4 is a side view showing a conventional nozzle tube set in a high-frequency plasma torch, and FIG. 5 is a top view of FIG. 4. FIG. 6 is a vertical sectional view showing a vertically movable nozzle of a conventional structure. 1...High frequency power supply, 2...Work coil, 3...
... Reaction gas supply device, 4, 5, 6, 7 ... Valve, 8 ... Nozzle cylinder, 9 ... Base, 10 ... Support, 11 ... Exhaust device, 12 ... Plasma generation chamber, 13 ... Reaction gas introduction pipe, 14...Cooling water introduction pipe, 14'...Cooling water outlet pipe, 15...Outer cylinder,
16... Vertical movable nozzle, 17... Sea gas hole,
18... Radial gas hole, 19... Axial gas hole, 20... Carrier gas hole, 21... Double pipe water cooling jacket, 22... Swage lock, 23
...Hollow cylindrical nozzle part, 24...Carbonaceous material,
25...Key body.
Claims (1)
給するための複重管構造を有するノズル筒８にお
いて、中心部に位置する上下可動ノズル１６の少
なくとも先端部分を炭素質材料により構成してな
る高周波プラズマトーチ用ノズル。 In a nozzle cylinder 8 having a double-pipe structure installed at the upper end of a torch to supply a reaction gas into the system, at least the tip portion of a vertically movable nozzle 16 located at the center is made of a carbonaceous material. Nozzle for high frequency plasma torch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988122273U JPH0527504Y2 (en) | 1988-09-19 | 1988-09-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988122273U JPH0527504Y2 (en) | 1988-09-19 | 1988-09-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0242067U JPH0242067U (en) | 1990-03-23 |
| JPH0527504Y2 true JPH0527504Y2 (en) | 1993-07-13 |
Family
ID=31370050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988122273U Expired - Lifetime JPH0527504Y2 (en) | 1988-09-19 | 1988-09-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0527504Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5767017A (en) * | 1980-10-09 | 1982-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin silicon film |
| JPS59184519A (en) * | 1983-04-05 | 1984-10-19 | Agency Of Ind Science & Technol | Method for generating ionized cluster beam and device therefor |
-
1988
- 1988-09-19 JP JP1988122273U patent/JPH0527504Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5767017A (en) * | 1980-10-09 | 1982-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of thin silicon film |
| JPS59184519A (en) * | 1983-04-05 | 1984-10-19 | Agency Of Ind Science & Technol | Method for generating ionized cluster beam and device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0242067U (en) | 1990-03-23 |
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