JPH0527278B2 - - Google Patents
Info
- Publication number
- JPH0527278B2 JPH0527278B2 JP58138565A JP13856583A JPH0527278B2 JP H0527278 B2 JPH0527278 B2 JP H0527278B2 JP 58138565 A JP58138565 A JP 58138565A JP 13856583 A JP13856583 A JP 13856583A JP H0527278 B2 JPH0527278 B2 JP H0527278B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- solar cell
- glass
- substrates
- unit cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58138565A JPS6030163A (ja) | 1983-07-28 | 1983-07-28 | 薄膜太陽電池モジユ−ル |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58138565A JPS6030163A (ja) | 1983-07-28 | 1983-07-28 | 薄膜太陽電池モジユ−ル |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6030163A JPS6030163A (ja) | 1985-02-15 |
JPH0527278B2 true JPH0527278B2 (zh) | 1993-04-20 |
Family
ID=15225111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58138565A Granted JPS6030163A (ja) | 1983-07-28 | 1983-07-28 | 薄膜太陽電池モジユ−ル |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6030163A (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
JPS62142372A (ja) * | 1985-12-17 | 1987-06-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS62142373A (ja) * | 1985-12-17 | 1987-06-25 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
JPS62189766A (ja) * | 1986-02-15 | 1987-08-19 | Semiconductor Energy Lab Co Ltd | 光電変換装置の作製方法 |
JPS62198171A (ja) * | 1986-02-25 | 1987-09-01 | Semiconductor Energy Lab Co Ltd | 光電変換半導体装置 |
AU731869B2 (en) * | 1998-11-12 | 2001-04-05 | Kaneka Corporation | Solar cell module |
JP3968422B2 (ja) * | 2002-07-05 | 2007-08-29 | 独立行政法人産業技術総合研究所 | 太陽光ハイブリッドモジュール |
EP2064746A2 (en) | 2006-09-29 | 2009-06-03 | University of Florida Research Foundation, Incorporated | Method and apparatus for infrared detection and display |
KR20080079058A (ko) * | 2007-02-26 | 2008-08-29 | 엘지전자 주식회사 | 박막형 태양전지 모듈과 그의 제조방법 |
DE102008005935A1 (de) * | 2007-11-29 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung |
EP2311101B1 (en) * | 2008-07-03 | 2012-11-21 | Imec | Photovoltaic module and the processing thereof |
US8138410B2 (en) * | 2008-10-01 | 2012-03-20 | International Business Machines Corporation | Optical tandem photovoltaic cell panels |
KR101677076B1 (ko) * | 2009-06-05 | 2016-11-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 디바이스 및 그 제조 방법 |
FR2948498B1 (fr) * | 2009-07-23 | 2012-06-15 | Solsia | Panneau solaire photovoltaique a diodes en couches minces |
CA2800549A1 (en) | 2010-05-24 | 2011-12-01 | University Of Florida Research Foundation, Inc. | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
EP2461362A1 (fr) * | 2010-12-06 | 2012-06-06 | Solsia | Panneau solaire photovoltaïque à diodes en couches minces |
JP2014511041A (ja) * | 2011-04-05 | 2014-05-01 | ユニバーシティー オブ フロリダ リサーチ ファウンデーション,インコーポレイテッド | 赤外線(ir)光電池を薄膜光電池上に集積する方法及び装置 |
KR102059208B1 (ko) | 2011-06-30 | 2020-02-07 | 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 | 이득을 갖는 적외선을 검출하는 방법 및 장치 |
JP5043244B1 (ja) * | 2012-02-20 | 2012-10-10 | 立山科学工業株式会社 | 太陽光発電システム |
CN107636431A (zh) | 2015-06-11 | 2018-01-26 | 佛罗里达大学研究基金会有限公司 | 单分散ir 吸收纳米颗粒以及相关方法和装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57187975A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Photoelectric converter |
JPS58215081A (ja) * | 1982-06-08 | 1983-12-14 | Mitsui Toatsu Chem Inc | アモルフアスシリコン太陽電池 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141960U (zh) * | 1979-03-29 | 1980-10-11 |
-
1983
- 1983-07-28 JP JP58138565A patent/JPS6030163A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57187975A (en) * | 1981-05-15 | 1982-11-18 | Agency Of Ind Science & Technol | Photoelectric converter |
JPS58215081A (ja) * | 1982-06-08 | 1983-12-14 | Mitsui Toatsu Chem Inc | アモルフアスシリコン太陽電池 |
Also Published As
Publication number | Publication date |
---|---|
JPS6030163A (ja) | 1985-02-15 |
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