JPH05267746A - Ferromagnetic magnetoresistance element - Google Patents
Ferromagnetic magnetoresistance elementInfo
- Publication number
- JPH05267746A JPH05267746A JP4065025A JP6502592A JPH05267746A JP H05267746 A JPH05267746 A JP H05267746A JP 4065025 A JP4065025 A JP 4065025A JP 6502592 A JP6502592 A JP 6502592A JP H05267746 A JPH05267746 A JP H05267746A
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- Prior art keywords
- film
- pattern
- electrodes
- alloy
- hard bias
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、強磁性体の磁気抵抗
効果を利用して磁界を検出する強磁性磁気抵抗素子に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferromagnetic magnetoresistive element which detects a magnetic field by utilizing the magnetoresistive effect of a ferromagnetic material.
【０００２】[0002]
【従来の技術】従来の強磁性磁気抵抗素子は、磁化方向
と電流方向とのなす角度により抵抗率が変化する強磁性
磁気抵抗効果を有するＮｉ−Ｆｅ系合金またはＮｉ−Ｃ
ｏ系合金の薄膜を絶縁基板上に形成し、フォトリソグラ
フィにより磁界感磁部と引き出し電極部を形成し、必要
に応じて基板表面に保護膜を形成することにより構成し
ている。そして、動作磁界点を調整するため、または一
軸異方性を補完あるいは付与するため、磁界感磁部の表
面にその磁気容易軸方向に平行にハードバイアス層を形
成している。このハードバイアス層の材料としては、従
来よりＣｏ−Ｐ系、Ｆｅ−Ｃｒ系、フェライト系などが
用いられている。2. Description of the Related Art A conventional ferromagnetic magnetoresistive element is a Ni--Fe alloy or Ni--C having a ferromagnetic magnetoresistive effect in which the resistivity changes depending on the angle formed by the magnetization direction and the current direction.
This is configured by forming a thin film of an o-based alloy on an insulating substrate, forming a magnetic field sensitive portion and a lead electrode portion by photolithography, and forming a protective film on the surface of the substrate if necessary. Then, in order to adjust the operating magnetic field point or to complement or give uniaxial anisotropy, a hard bias layer is formed on the surface of the magnetic field sensitive section in parallel with the easy axis direction of the magnetic field. As a material of this hard bias layer, Co-P type, Fe-Cr type, ferrite type, etc. have been conventionally used.
【０００３】[0003]
【発明が解決しようとする課題】ところが、前述した従
来のハードバイアス層の材料では、いずれも半田付け性
が低く、また真空蒸着法では、蒸着回数が増すごとにイ
ンゴットの組成ずれが大きくなり、したがってハードバ
イアス層の組成ずれも大きくなって、所期の特性が得ら
れなくなるという問題があった。However, any of the materials for the conventional hard bias layers described above has low solderability, and in the vacuum deposition method, the composition deviation of the ingot increases as the number of depositions increases. Therefore, there is a problem that the compositional deviation of the hard bias layer becomes large and the desired characteristics cannot be obtained.
【０００４】この発明の目的は、良好なハードバイアス
効果を有するハードバイアスバーとして、また半田付け
性などのボンディング性の良好な電極として作用する蒸
着膜を形成して、前述の問題を解消した強磁性磁気抵抗
素子を提供することにある。An object of the present invention is to form a vapor-deposited film that acts as a hard bias bar having a good hard bias effect and as an electrode having a good bonding property such as soldering property, to solve the above-mentioned problems. It is to provide a magnetic magnetoresistive element.
【０００５】[0005]
【課題を解決するための手段】この発明の強磁性磁気抵
抗素子は、絶縁基板の一方の主面に強磁性磁気抵抗膜パ
ターンを形成し、この強磁性磁気抵抗膜パターンの引き
出し部に、ＣｏX Ｎｉ(1-X) 合金 （但し８０ｗｔ％≦
Ｘ≦９５ｗｔ％）からなる蒸着膜を形成するとともに、
この蒸着膜をハードバイアスバーとして着磁したことを
特徴とする。According to the ferromagnetic magnetoresistive element of the present invention, a ferromagnetic magnetoresistive film pattern is formed on one main surface of an insulating substrate, and a Co X Ni (1-X) alloy (80wt% ≤
X ≦ 95 wt%), and at the same time,
The vapor-deposited film is magnetized as a hard bias bar.
【０００６】[0006]
【作用】この発明の強磁性磁気抵抗素子では、絶縁基板
の一方の主面に強磁性磁気抵抗膜パターンが形成され、
この強磁性磁気抵抗膜パターンの引き出し部に形成され
る蒸着膜は、ＣｏX Ｎｉ(1-X) 合金（ただし８０ｗｔ％
≦Ｘ≦９５ｗｔ％）からなり、この蒸着膜はハードバイ
アスバーとして着磁されている。In the ferromagnetic magnetoresistive element of the present invention, the ferromagnetic magnetoresistive film pattern is formed on one main surface of the insulating substrate,
The vapor-deposited film formed on the lead-out portion of this ferromagnetic magnetoresistive film pattern is a Co X Ni (1-X) alloy (however, 80 wt%
≦ X ≦ 95 wt%), and this deposited film is magnetized as a hard bias bar.
【０００７】このようにＣｏＮｉ合金の蒸着膜は半田付
けなどのボンディング性が良好であり、ボンディング用
電極として用いることができる。また、発明者らの実験
により見いだした結果によれば、ＣｏＮｉ合金を前記組
成条件で真空蒸着することにより、蒸着毎に得られる蒸
着膜の組成変化が少なく、そのため磁気異方性の大きな
保磁力の小さな強磁性磁気抵抗膜が安定して得られる。As described above, the vapor-deposited film of CoNi alloy has a good bonding property such as soldering and can be used as a bonding electrode. Further, according to the results found by the experiments of the inventors, by performing vacuum deposition of the CoNi alloy under the above composition conditions, the composition change of the deposited film obtained by each deposition is small, and therefore the coercive force with large magnetic anisotropy is obtained. It is possible to stably obtain a ferromagnetic magnetoresistive film having a small size.
【０００８】[0008]
【実施例】この発明の第１の実施例に係る強磁性磁気抵
抗素子の構造を図１に示す。図１において（Ａ）は部分
平面図、（Ｂ）は（Ａ）におけるパターン方向の中央断
面図である。図１において、まず絶縁性ガラス基板１の
上面に、Ｎｉ−２５％Ｃｏ合金を磁場中蒸着法により膜
厚５００Å成膜し、次いでフォトリソグラフィにより磁
気容易軸を長手方向として線幅２０μｍ長さ１ｍｍの短
冊状パターンからなる感磁部２を形成する。続いて、感
磁部２の両端部に、下地電極としてＴｉを５００Å蒸着
し、その上層にＣｏ−１５％Ｎｉを３０００Å蒸着し、
これをパターニングして引き出し電極３を形成する。ま
た、引き出し電極３は感磁部２の長手方向の向きに着磁
する。図中の矢印はその着磁方向を示す。その後、必要
に応じて電極３の上部にたとえばＡｕ層を形成して、Ａ
ｕワイヤーによるワイヤーボンディング性を高めてもよ
い。1 shows the structure of a ferromagnetic magnetoresistive element according to the first embodiment of the present invention. In FIG. 1, (A) is a partial plan view and (B) is a central sectional view in the pattern direction in (A). In FIG. 1, first, a Ni-25% Co alloy is deposited on the upper surface of the insulating glass substrate 1 to a film thickness of 500Å by a magnetic field vapor deposition method, and then a line width of 20 μm and a length of 1 mm with the easy magnetic axis as the longitudinal direction by photolithography. The magnetic sensitive portion 2 having a strip-shaped pattern is formed. Then, 500 liters of Ti is deposited as a base electrode on both ends of the magnetic sensing part 2, and 3000 liters of Co-15% Ni is deposited on the upper layer thereof.
This is patterned to form the extraction electrode 3. Further, the extraction electrode 3 is magnetized in the longitudinal direction of the magnetic sensing part 2. The arrow in the figure indicates the magnetization direction. After that, an Au layer, for example, is formed on the electrode 3 if necessary, and A
You may improve the wire bondability by u wire.
【０００９】次に、図１に示した試料を用い、ハードバ
イアス膜兼電極膜材料としてＣｏ−Ｐ系、Ｆｅ−Ｃｒ
系、フェライト系を用いた場合を比較例として、蒸着回
数による特性変化の例を図５に、また磁気抵抗効果特性
の例を図６および図７に示す。Next, using the sample shown in FIG. 1, as a hard bias film / electrode film material, Co-P type, Fe-Cr
5 and an example of the magnetoresistive effect characteristic are shown in FIGS. 6 and 7 as a comparative example, in which the case of using a system and a ferrite system is used as a comparative example.
【００１０】図５において横軸は、同一材料について１
０個の試料を作成したときの蒸着回数（序数）、縦軸は
強磁性磁気抵抗素子の磁気抵抗効果特性から求めた保磁
力Ｈｃである。この保磁力は、具体的には強磁性磁気抵
抗素子に加える磁界の強さおよび向きを変化させたとき
に現れる抵抗値のピークのずれにより測定した。このよ
うに従来のＣｏ−Ｐ系、Ｆｅ−Ｃｒ系およびフェライト
系では、蒸着を行うごとに得られる強磁性磁気抵抗膜の
保磁力は増大するが、本願発明の実施例（Ｃｏ−Ｎｉ）
では保磁力はほとんど増大しない。In FIG. 5, the horizontal axis represents 1 for the same material.
The number of vapor depositions (ordinal number) when 0 samples were prepared, and the vertical axis represents the coercive force Hc obtained from the magnetoresistive effect characteristics of the ferromagnetic magnetoresistive element. Specifically, this coercive force was measured by the shift of the peak of the resistance value that appeared when the strength and direction of the magnetic field applied to the ferromagnetic magnetoresistive element were changed. As described above, in the conventional Co-P-based, Fe-Cr-based, and ferrite-based materials, the coercive force of the ferromagnetic magnetoresistive film obtained each time vapor deposition is increased, but the embodiment of the present invention (Co-Ni)
Then, the coercive force hardly increases.
【００１１】図６および図７において横軸は信号磁界強
度、縦軸は素子の抵抗値である。ここで印加する磁界方
向は図１において紙面に平行で感磁部２に流れる電流方
向に直角な方向である。このようにハードバイアス膜の
一軸異方性が低下し、ハードバイアス効果が低下すれ
ば、磁界０からずれた点で抵抗値が最大となる２つのピ
ークが生じ、磁気抵抗特性にヒステリシスが生じること
がわかる。このようなヒステリシス性は強磁性磁気抵抗
膜内の異方性分散などに起因するものであると考えられ
る。6 and 7, the horizontal axis represents the signal magnetic field strength and the vertical axis represents the resistance value of the element. The direction of the magnetic field applied here is a direction parallel to the paper surface in FIG. 1 and perpendicular to the direction of the current flowing through the magnetic sensing portion 2. Thus, if the uniaxial anisotropy of the hard bias film is reduced and the hard bias effect is reduced, two peaks having the maximum resistance value are generated at a point deviated from the magnetic field 0, which causes hysteresis in the magnetoresistive characteristic. I understand. It is considered that such a hysteresis property is caused by anisotropic dispersion in the ferromagnetic magnetoresistive film.
【００１２】次に、第２の実施例に係る強磁性磁気抵抗
素子の構造を図２に示す。（Ａ）はその部分平面図、
（Ｂ）は（Ａ）におけるパターン方向の断面図である。
図２において、まずグレーズドアルミナ基板１のグレー
ズ面上にＮｉ−１８％Ｆｅ合金を磁場中蒸着法により膜
厚３００Å成膜し、次いでフォトリソグラフィにより、
磁気容易軸を短辺方向として線幅５０μｍ、長さ５００
μｍの短冊状パターンからなる感磁部２を形成する。続
いて、感磁部２の上部に、感磁部の幅に長さを同一とし
た幅５μｍのＣｏ−１８％Ｎｉ合金を２０００Å蒸着
し、１５μｍピッチで図に示すようにパターン４を配列
するとともに、感磁部の両端部に電極３をパターンニン
グし、これらを感磁部の磁気容易軸方向に着磁する。図
中の矢印はその着磁方向を示す。このことによって、パ
ターン４をハードバイアスバー、電極３をハードバイア
スバー兼引き出し電極として構成する。Next, the structure of the ferromagnetic magnetoresistive element according to the second embodiment is shown in FIG. (A) is a partial plan view thereof,
(B) is a sectional view in the pattern direction in (A).
In FIG. 2, first, a Ni-18% Fe alloy was formed on the glaze surface of the glaze alumina substrate 1 by a magnetic field vapor deposition method to a film thickness of 300Å, and then by photolithography.
Magnetic easy axis in the short side direction line width 50 μm, length 500
The magnetic sensing portion 2 having a strip-shaped pattern of μm is formed. Then, a Co-18% Ni alloy having a width of 5 μm and a width of 5 μm is deposited on the upper portion of the magnetic sensing unit 2 by 2000Å, and the pattern 4 is arranged at a pitch of 15 μm as shown in the figure. At the same time, the electrodes 3 are patterned on both ends of the magnetic sensitive portion, and these are magnetized in the magnetic easy axis direction of the magnetic sensitive portion. The arrow in the figure indicates the magnetization direction. As a result, the pattern 4 is configured as a hard bias bar, and the electrode 3 is configured as a hard bias bar / drawing electrode.
【００１３】次に、第３の実施例に係る強磁性磁気抵抗
素子の構造を図３に示す。（Ａ）はその部分平面図、
（Ｂ）は（Ａ）におけるパターンの中央部を通る断面図
である。図３において、まず熱酸化シリコン基板１の絶
縁面上にＮｉ−５０％Ｃｏ合金を磁場中蒸着法により膜
厚４００Å成膜し、フォトリソグラフィにより磁気容易
軸を４５°方向として線幅６０μｍ長さ３００μｍの短
冊状パターンからなる感磁部２を形成する。続いて、Ｃ
ｏ−１７％Ｎｉ合金を３０００Å、Ａｕを１０００Å成
膜し、感磁部２の幅に高さを同一とし、斜辺を感磁部２
の磁気容易軸に平行とした底辺５μｍの平行四辺形状の
パターン４を１０μｍピッチで配置するとともに、感磁
部２の両端部に電極３を形成し、これらを感磁部の磁気
容易軸方向に着磁する。図中の矢印はその着磁方向を示
す。なお、パターン４および電極３はエッチング法また
はリフトオフ法によりパターンニングすることができ
る。以上のようにして、パターン４をハードバイアスバ
ー、電極３をハードバイアスバー兼引き出し電極として
構成する。Next, the structure of the ferromagnetic magnetoresistive element according to the third embodiment is shown in FIG. (A) is a partial plan view thereof,
(B) is a cross-sectional view through the central portion of the pattern in (A). In FIG. 3, first, a Ni-50% Co alloy is deposited on the insulating surface of the thermally oxidized silicon substrate 1 by a vapor deposition method in a magnetic field to form a film having a thickness of 400Å, and a line width of 60 μm is formed by photolithography with an easy axis of 45 °. The magnetic sensing portion 2 having a strip pattern of 300 μm is formed. Then C
3000 Å of o-17% Ni alloy and 1000 Å of Au are formed, the width is the same as the width of the magnetic sensitive portion 2, and the hypotenuse is the magnetic sensitive portion 2
The parallelogram-shaped pattern 4 having a base of 5 μm parallel to the magnetic easy axis of is arranged at a pitch of 10 μm, and the electrodes 3 are formed at both ends of the magnetic sensitive section 2. These are arranged in the magnetic easy axis direction of the magnetic sensitive section. Magnetize. The arrow in the figure indicates the magnetization direction. The pattern 4 and the electrode 3 can be patterned by an etching method or a lift-off method. As described above, the pattern 4 is configured as a hard bias bar, and the electrode 3 is configured as a hard bias bar / drawing electrode.
【００１４】次に、第４の実施例に係る強磁性磁気抵抗
素子の構造を図４に示す。（Ａ）はその部分平面図、
（Ｂ）は（Ａ）におけるパターン方向中央部の断面図で
ある。Next, the structure of the ferromagnetic magnetoresistive element according to the fourth embodiment is shown in FIG. (A) is a partial plan view thereof,
(B) is a cross-sectional view of the central portion in the pattern direction in (A).
【００１５】図４において、まず絶縁性ガラス基板１上
にＮｉ−１８％Ｆｅ合金を磁場中蒸着法により膜厚３０
０Å成膜し、フォトリソグラフィにより、磁気容易軸を
短辺方向として線幅５０μｍ、長さ５００μｍの短冊状
パターンからなる感磁部２を形成する。続いて、Ｓｉ−
Ｎ膜５を被覆し、感磁部２の両端部に窓部を形成する。In FIG. 4, first, a Ni-18% Fe alloy having a thickness of 30 is formed on an insulating glass substrate 1 by a magnetic field vapor deposition method.
A film having a thickness of 0 Å is formed, and by photolithography, the magnetic sensitive portion 2 having a strip-shaped pattern having a line width of 50 μm and a length of 500 μm is formed with the magnetic easy axis as the short side direction. Then, Si-
The N film 5 is covered, and windows are formed at both ends of the magnetic sensing part 2.
【００１６】その後、Ｃｏ−１８％Ｎｉ合金２０００
Å、Ａｕ１０００Åからなる蒸着膜を成膜し、感磁部２
の幅に長さを同一とした幅５μｍのパターンを１５μｍ
ピッチでパターン４を配置するとともに、感磁部２の両
端部に電極３を形成し、これらを感磁部の磁気容易軸方
向に着磁する。図中の矢印はその着磁方向を示す。これ
により、パターン４をハードバイアスバー、電極３をハ
ードバイアスバー兼引き出し電極として構成する。After that, Co-18% Ni alloy 2000
Å, Au1000Å vapor deposition film is formed, the magnetic sensitive section 2
Width of 5 μm with the same length as the width of
The patterns 4 are arranged at a pitch, and the electrodes 3 are formed at both ends of the magnetic sensitive portion 2, and these are magnetized in the magnetic easy axis direction of the magnetic sensitive portion. The arrow in the figure indicates the magnetization direction. As a result, the pattern 4 is configured as a hard bias bar, and the electrode 3 is configured as a hard bias bar / drawing electrode.
【００１７】[0017]
【発明の効果】この発明の強磁性磁気抵抗素子によれ
ば、組成ずれの少ないハードバイアス膜が得られるた
め、良好なハードバイアスを付与した強磁性磁気抵抗素
子が安定して得られる。また、半田付け性などのボンデ
ィング性に優れた電極が形成されるため、外部回路との
接続が容易となる。さらに、電極形成によりハードバイ
アスが付与されることになるため、素子製造上のプロセ
スが簡略化される。According to the ferromagnetic magnetoresistive element of the present invention, a hard bias film having a small composition deviation can be obtained, so that a ferromagnetic magnetoresistive element to which a good hard bias is applied can be stably obtained. Further, since an electrode having excellent bonding property such as solderability is formed, connection with an external circuit becomes easy. Furthermore, since the hard bias is applied by forming the electrodes, the process for manufacturing the device is simplified.
【図１】この発明の第１の実施例に係る強磁性磁気抵抗
素子の構造を示す図であり、（Ａ）は部分平面図、
（Ｂ）は（Ａ）におけるパターン中央部の断面図であ
る。FIG. 1 is a diagram showing a structure of a ferromagnetic magnetoresistive element according to a first embodiment of the present invention, (A) is a partial plan view,
(B) is a cross-sectional view of the central portion of the pattern in (A).
【図２】この発明の第２の実施例に係る強磁性磁気抵抗
素子の構造を示す図であり、（Ａ）は部分平面図、
（Ｂ）は（Ａ）におけるパターン中央部の断面図であ
る。FIG. 2 is a view showing a structure of a ferromagnetic magnetoresistive element according to a second embodiment of the present invention, (A) is a partial plan view,
(B) is a cross-sectional view of the central portion of the pattern in (A).
【図３】この発明の第３の実施例に係る強磁性磁気抵抗
素子の構造を示す図であり、（Ａ）は部分平面図、
（Ｂ）は（Ａ）におけるパターン中央部の断面図であ
る。FIG. 3 is a diagram showing a structure of a ferromagnetic magnetoresistive element according to a third embodiment of the present invention, (A) is a partial plan view,
(B) is a cross-sectional view of the central portion of the pattern in (A).
【図４】この発明の第４の実施例に係る強磁性磁気抵抗
素子の構造を示す図であり、（Ａ）は部分平面図、
（Ｂ）は（Ａ）におけるパターン中央部の断面図であ
る。FIG. 4 is a view showing a structure of a ferromagnetic magnetoresistive element according to a fourth embodiment of the present invention, (A) is a partial plan view,
(B) is a cross-sectional view of the central portion of the pattern in (A).
【図５】蒸着材料を替えて図１に示す電極３を形成した
場合の、蒸着回数に対する保磁力の変化を示す図であ
る。5 is a diagram showing a change in coercive force with respect to the number of vapor depositions when the electrode 3 shown in FIG. 1 is formed by changing the vapor deposition material.
【図６】本発明の実施例に係る磁気抵抗効果の特性図で
ある。FIG. 6 is a characteristic diagram of a magnetoresistive effect according to an example of the present invention.
【図７】従来の強磁性磁気抵抗素子に係る磁気抵抗効果
の特性図である。FIG. 7 is a characteristic diagram of a magnetoresistive effect in a conventional ferromagnetic magnetoresistive element.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中川 卓二 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 (72)発明者 小木曽 美文 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Takuji Nakagawa 2 26-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd. (72) Inventor Yoshifumi Ogiso 2 26-10 Tenjin, Nagaokakyo, Kyoto Murata Manufacturing
Claims (1)
パターンを形成し、この強磁性磁気抵抗膜パターンの引
き出し部に、ＣｏX Ｎｉ(1-X) 合金 （但し８０ｗｔ％
≦Ｘ≦９５ｗｔ％）からなる蒸着膜を形成するととも
に、この蒸着膜をハードバイアスバーとして着磁したこ
とを特徴とする強磁性磁気抵抗素子。1. A ferromagnetic magnetoresistive film pattern is formed on one main surface of an insulating substrate, and a Co X Ni (1-X) alloy (80 wt%
≦ X ≦ 95 wt%), and a ferromagnetic magnetoresistive element characterized by being formed by magnetizing the deposited film as a hard bias bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4065025A JP3047607B2 (en) | 1992-03-23 | 1992-03-23 | Ferromagnetic magnetoresistive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4065025A JP3047607B2 (en) | 1992-03-23 | 1992-03-23 | Ferromagnetic magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267746A true JPH05267746A (en) | 1993-10-15 |
| JP3047607B2 JP3047607B2 (en) | 2000-05-29 |
Family
ID=13275026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4065025A Expired - Fee Related JP3047607B2 (en) | 1992-03-23 | 1992-03-23 | Ferromagnetic magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3047607B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7466521B2 (en) | 2006-04-25 | 2008-12-16 | Hitachi Global Storage Technologies Netherlands B.V. | EMR structure with bias control and enhanced linearity of signal |
-
1992
- 1992-03-23 JP JP4065025A patent/JP3047607B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7466521B2 (en) | 2006-04-25 | 2008-12-16 | Hitachi Global Storage Technologies Netherlands B.V. | EMR structure with bias control and enhanced linearity of signal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3047607B2 (en) | 2000-05-29 |
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