JPH05267390A - Connection of semiconductor device - Google Patents
Connection of semiconductor deviceInfo
- Publication number
- JPH05267390A JPH05267390A JP6226692A JP6226692A JPH05267390A JP H05267390 A JPH05267390 A JP H05267390A JP 6226692 A JP6226692 A JP 6226692A JP 6226692 A JP6226692 A JP 6226692A JP H05267390 A JPH05267390 A JP H05267390A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- adhesive
- glass substrate
- wiring board
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置の接続方
法に関し、特にプリント基板,セラミック基板,ガラス基
板,金属ベース基板あるいはフレキシブル基板等の配線
基板上に半導体装置を接着剤によってフェイスダウンで
加圧接触接続する半導体装置の接続方法の改良に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting semiconductor devices, and more particularly to a semiconductor device which is applied face down on a wiring substrate such as a printed circuit board, a ceramic substrate, a glass substrate, a metal base substrate or a flexible substrate with an adhesive. The present invention relates to an improvement in a method of connecting a semiconductor device for pressure contact connection.
【０００２】[0002]
【従来の技術】近年、半田のような合金を用いた合金拡
散接続によらずに、接着剤を用いて配線基板上に半導体
装置をフェイスダウン接続する方法が種々提案されてい
る(例えば、畑田等“マイクロ・バンプ・ボンディング方
式の応用"，電子情報通信学会技術研究報告，Vol.88，N
o.233，CPM88-64 (1988))。2. Description of the Related Art In recent years, various methods have been proposed for connecting a semiconductor device facedown on a wiring board using an adhesive instead of alloy diffusion connection using an alloy such as solder (for example, Hatada). "Application of micro bump bonding method", IEICE technical report, Vol.88, N
o.233, CPM88-64 (1988)).
【０００３】上記畑田等によって提案された方法によれ
ば、図６に示すように、セラミック基板１上に光硬化性
樹脂６を滴下し、半導体装置２の電極３上のバンプ４と
セラミック基板１上の配線電極５との位置合わせを行
い、加圧しながら紫外線を照射して光硬化性樹脂６を硬
化させるようにしている。こうして、セラミック基板１
と半導体装置２との間隙部の全てに光硬化性樹脂６が充
填された実装形態が得られるのである。According to the method proposed by Hatada et al., As shown in FIG. 6, the photocurable resin 6 is dropped on the ceramic substrate 1 to form bumps 4 on the electrodes 3 of the semiconductor device 2 and the ceramic substrate 1. The photo-curable resin 6 is cured by aligning with the upper wiring electrode 5 and irradiating ultraviolet rays while applying pressure. Thus, the ceramic substrate 1
Thus, the mounting form in which the photocurable resin 6 is filled in the entire gap between the semiconductor device 2 and the semiconductor device 2 can be obtained.
【０００４】[0004]
【発明が解決しようとする課題】上述のように、接着剤
を用いて配線基板上に半導体装置をフェイスダウン接続
する方法によって実装された半導体装置は、接着剤によ
って完全に封止されている。そのために、実装後の電気
的テストによって半導体装置不良が発見されて半導体装
置の交換(所謂、リペア)を実施する際には、隣接する半
導体装置を封止している接着剤等への影響や接着剤残渣
の除去や配線基板の損傷等を考慮する必要があり、リペ
アが非常に困難であるという問題がある。As described above, the semiconductor device mounted by the method of connecting the semiconductor device face down on the wiring board by using the adhesive is completely sealed by the adhesive. Therefore, when a semiconductor device defect is found by an electrical test after mounting and the semiconductor device is replaced (so-called repair), the influence on the adhesive or the like which seals the adjacent semiconductor device, There is a problem that repairing is very difficult because it is necessary to consider removal of adhesive residue and damage to the wiring board.
【０００５】そこで、この発明の目的は、リペアを容易
にする半導体装置の接続方法を提供することにある。Therefore, an object of the present invention is to provide a method of connecting semiconductor devices that facilitates repair.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、この発明の半導体装置の接続方法は、半導体装置上
の電極と配線基板上の電極のうち少なくとも一方の上に
少なくとも表面層が電気伝導性を有する介在物を設け、
この介在物を介して上記配線基板上に上記半導体装置を
接着剤によってフェイスダウンで加圧接続する半導体装
置の接続方法であって、上記半導体装置および配線基板
のいずれか一方における電極側の表面の上記半導体装置
の表面より狭い領域に、上記半導体装置を配線基板上に
接続した際に上記半導体装置と配線基板とが対向してい
る面積よりも小さな領域を覆うだけの量の接着剤を供給
し、上記半導体装置を配線基板上にフェイスダウンで加
圧接触させ、上記接着剤を硬化させて上記半導体装置を
配線基板上に接続し、その後上記半導体装置と配線基板
との間隙部における残りの全ての領域にも接着剤を供給
して硬化させることを特徴としている。In order to achieve the above object, a method of connecting a semiconductor device according to the present invention is such that at least a surface layer is electrically conductive on at least one of an electrode on a semiconductor device and an electrode on a wiring board. Provided with an inclusion having
A method for connecting a semiconductor device, wherein the semiconductor device is pressure-down connected to the wiring board face down with an adhesive via the interposition, wherein a surface of an electrode side of either one of the semiconductor device and the wiring board is An amount of adhesive is supplied to a region narrower than the surface of the semiconductor device so as to cover a region smaller than the area where the semiconductor device and the wiring substrate face each other when the semiconductor device is connected to the wiring substrate. , The semiconductor device is pressure-contacted on the wiring substrate face down, the adhesive is cured to connect the semiconductor device to the wiring substrate, and then all the remaining portions in the gap between the semiconductor device and the wiring substrate It is characterized in that an adhesive is also supplied to the area to be cured.
【０００７】[0007]
【実施例】以下、この発明を図示の実施例により詳細に
説明する。図１乃至図３は、本実施例に係る半導体装置
の接続過程を示す断面図である。以下、図１乃至図３に
従って、本実施例の半導体装置の接続方法について説明
する。The present invention will be described in detail below with reference to the embodiments shown in the drawings. 1 to 3 are sectional views showing a connecting process of the semiconductor device according to the present embodiment. Hereinafter, a method for connecting the semiconductor device according to the present embodiment will be described with reference to FIGS.
【０００８】先ず、図１に示すように、トランジスタや
ダイオードやキャパシタ等の能動素子や受動素子を作り
込んだシリコンチップ等の半導体装置１１の表面に形成
された入出力電極１２に、ガラス基板上の配線電極との
電気的接続を得るための介在物としての微小粒子(図１
においては省略)を設ける。この微小粒子は、種々の既
知の方法（例えば、新ほか“第６回国際マイクロエレク
トロニクス会議報告(Proceedings of the 6th Internat
ional Microelectronics Conference)"（1990）p.190に
記載の方法）によって、例えば以下のように設ける。First, as shown in FIG. 1, an input / output electrode 12 formed on the surface of a semiconductor device 11 such as a silicon chip in which an active element such as a transistor, a diode or a capacitor or a passive element is formed is attached to a glass substrate. Fine particles as inclusions to obtain electrical connection with the wiring electrodes of
Is omitted). These microparticles can be produced by various known methods (see, for example, Shin et al. “Proceedings of the 6th Internat.
ional Microelectronics Conference) "(1990) p.190), for example, as follows.
【０００９】図４は上記半導体装置１１の入出力電極１
２付近の拡大断面図である。上記入出力電極１２はＡu/
Ｔi-Ｗ/Ａl-Ｓi(最上層がＡu)から成り、その周囲が窒
化シリコン等の絶縁膜１３で保護されている。そして、
この入出力電極１２の開口部上に複数の微小粒子１４が
載置される。この微小粒子１４は例えば図５に示すよう
な構造を有している。すなわち、高分子をコアとする直
径１０μmの球１５にＡuメッキ１６が施してあり、導電
性を有するようになっている。FIG. 4 shows the input / output electrode 1 of the semiconductor device 11.
FIG. 2 is an enlarged sectional view around 2. The input / output electrode 12 is Au /
It is made of Ti-W / Al-Si (the uppermost layer is Au), and the periphery thereof is protected by an insulating film 13 such as silicon nitride. And
A plurality of fine particles 14 are placed on the openings of the input / output electrodes 12. The fine particles 14 have a structure as shown in FIG. 5, for example. That is, a sphere 15 having a diameter of 10 μm, which has a polymer core, is plated with Au so as to have conductivity.
【００１０】次に、上記半導体装置１１の入出力電極１
２側の表面に光硬化性接着剤１７を供給する。その際に
おける光硬化性接着剤１７は、例えば半導体装置１１を
液晶セルのガラス基板上に実装する場合には、半導体装
置１１と上記ガラス基板との間隙部の全領域に渡って拡
がらずに半導体装置１１とガラス基板とを電気的かつ機
械的に接続できる程度の量をマイクロディスペンサで供
給するのである。Next, the input / output electrode 1 of the semiconductor device 11 is described.
The photocurable adhesive 17 is supplied to the surface on the second side. In this case, the photocurable adhesive 17 does not spread over the entire area of the gap between the semiconductor device 11 and the glass substrate when the semiconductor device 11 is mounted on the glass substrate of the liquid crystal cell, for example. The micro-dispenser supplies a sufficient amount to electrically and mechanically connect the semiconductor device 11 and the glass substrate.
【００１１】そうした後、図２に示すように、予め樹脂
２２で液晶２１を封止して成る液晶セル２０のガラス基
板１８上の配線電極１９と接続すべき半導体装置１１の
入出力電極１２とを対向させて、半導体装置１１の位置
合わせを行う。そして、上記半導体装置１１の入出力電
極１２上の微小粒子１４をガラス基板１８上の配線電極
１９に加圧接触させて、ガラス基板１８の裏面から紫外
線を照射する。こうして、紫外線によって上記光硬化性
接着剤１７を硬化させるのである。この段階で、半導体
装置１１とガラス基板１８とは微小粒子１４を介して電
気的かつ機械的に接続された状態、つまり仮止め状態に
なる。After that, as shown in FIG. 2, the input / output electrodes 12 of the semiconductor device 11 to be connected to the wiring electrodes 19 on the glass substrate 18 of the liquid crystal cell 20 formed by previously sealing the liquid crystal 21 with the resin 22. And the semiconductor device 11 is aligned. Then, the fine particles 14 on the input / output electrodes 12 of the semiconductor device 11 are brought into pressure contact with the wiring electrodes 19 on the glass substrate 18 to irradiate ultraviolet rays from the back surface of the glass substrate 18. Thus, the photo-curable adhesive 17 is cured by the ultraviolet rays. At this stage, the semiconductor device 11 and the glass substrate 18 are electrically and mechanically connected to each other via the fine particles 14, that is, in a temporarily fixed state.
【００１２】しかる後に、上記仮止め状態における半導
体装置１１とガラス基板１８の接続部の電気的テストを
行う。その結果、もし上記半導体装置１１が不良半導体
装置であることや接続不良があることが判明してリペア
の必要性が生じた場合には、適当な方法によって半導体
装置１１を取り外す。その際に、半導体装置１１は少量
の光硬化性接着剤１７によって仮止めされているだけな
ので接着面積が小さく、隣接して設けられている液晶セ
ル２０やガラス基板１８に悪影響を及ぼしたり接着剤残
渣が生じたりすることなく、非常に簡単に半導体装置１
１を取り外すことができるのである。After that, an electrical test is performed on the connection between the semiconductor device 11 and the glass substrate 18 in the temporarily fixed state. As a result, if it is determined that the semiconductor device 11 is a defective semiconductor device or that there is a connection failure and the necessity for repair arises, the semiconductor device 11 is removed by an appropriate method. At that time, since the semiconductor device 11 is only temporarily fixed by a small amount of the photo-curable adhesive 17, the adhesive area is small, which adversely affects the liquid crystal cell 20 and the glass substrate 18 which are provided adjacent to each other, or the adhesive. The semiconductor device 1 can be very easily manufactured without generating a residue.
1 can be removed.
【００１３】その後、改めて良好な特性を有する半導体
装置を上述と同じ方法によって同じ配線電極１９に仮止
めする。そして、再度電気的テストを実施するのであ
る。以下、このことを、良好な電気的テスト結果を得る
まで繰り返す。After that, a semiconductor device having good characteristics is temporarily fixed to the same wiring electrode 19 by the same method as described above. Then, the electrical test is performed again. Hereinafter, this is repeated until a good electrical test result is obtained.
【００１４】そして、例えば、上記電気的テストによっ
て半導体装置に不良箇所がないことが判明した場合に
は、図３に示すように、正常な半導体装置２３とガラス
基板１８との間隙部の残りの領域の全てにも光硬化性接
着剤１７をディスペンサで供給し、紫外線を照射して光
硬化性接着剤１７を硬化させる。こうして、半導体装置
２３はガラス基板１８上に完全に封止され、半導体装置
２３の入出力電極２４に取り付けられた微小粒子２５と
ガラス基板１８上の配線電極１９とは電気的にかつ機械
的に完全に接続されるのである。Then, for example, when it is found by the above electrical test that the semiconductor device has no defective portion, as shown in FIG. 3, the remaining portion of the gap between the normal semiconductor device 23 and the glass substrate 18 remains. The photocurable adhesive 17 is also supplied to all of the regions with a dispenser, and the photocurable adhesive 17 is cured by irradiation with ultraviolet rays. In this way, the semiconductor device 23 is completely sealed on the glass substrate 18, and the fine particles 25 attached to the input / output electrodes 24 of the semiconductor device 23 and the wiring electrodes 19 on the glass substrate 18 are electrically and mechanically. It is completely connected.
【００１５】このように、本実施例においては、半導体
装置１１をガラス基板１８上に少量の光硬化性接着剤１
７で仮止めして電気的テストを実施するようにしたの
で、半導体装置１１が不良である場合には、隣接する液
晶セル２０やガラス基板１８に対する影響や接着剤残渣
の除去等に対する配慮の必要がなく、容易にリペアを実
施できる。また、上記電気的テストの結果不都合がなけ
れば、正常な半導体装置２３とガラス基板１８との間隙
部を全て光硬化性接着剤１７で埋め尽くすので、半導体
装置２３は光硬化性接着剤１７で完全に封止され、半導
体装置２３の入出力電極２４とガラス基板１８の配線電
極１９とは微小粒子２５を介して電気的および機械的に
完全に接続される。As described above, in this embodiment, the semiconductor device 11 is placed on the glass substrate 18 in a small amount of the photocurable adhesive 1.
Since the electrical test is carried out by temporarily fixing in 7, it is necessary to consider the influence on the adjacent liquid crystal cell 20 and the glass substrate 18 and the removal of the adhesive residue when the semiconductor device 11 is defective. There is no problem, and repair can be easily performed. If there is no inconvenience as a result of the electrical test, the gap between the normal semiconductor device 23 and the glass substrate 18 is completely filled with the photocurable adhesive 17, so that the semiconductor device 23 is covered with the photocurable adhesive 17. It is completely sealed, and the input / output electrode 24 of the semiconductor device 23 and the wiring electrode 19 of the glass substrate 18 are electrically and mechanically completely connected via the fine particles 25.
【００１６】上記半導体装置１１,２３の入出力電極１
２,２４側の表面に仮止め用の光硬化性接着剤１７を供
給する際は、その滴下量が上述のように半導体装置１
１,２３とガラス基板１８との間隙部全体に拡がらない
程度であればよく、その滴下位置は特に限定するもので
はない。但し、入出力電極１２,２４の箇所は避けたほ
うがよいことは言うまでもない。上記実施例において
は、仮止め用の光硬化性接着剤１７を半導体装置１１,
２３側に供給しているが、ガラス基板１８側に供給して
も何等差し支えない。Input / output electrodes 1 of the semiconductor devices 11 and 23
When the photo-setting adhesive 17 for temporary fixing is supplied to the surface on the side of 2, 24, the dropping amount thereof is as described above.
The dropping position is not particularly limited as long as it does not spread over the entire gap between 1, 23 and the glass substrate 18. However, it goes without saying that it is better to avoid the locations of the input / output electrodes 12 and 24. In the above embodiment, the photo-curable adhesive 17 for temporary fixing is used as the semiconductor device 11,
Although it is supplied to the 23 side, there is no problem even if it is supplied to the glass substrate 18 side.
【００１７】上記半導体装置１１,２３としては、上述
のシリコンチップの他に、ＧaＡsやＩnＰ等の化合物半
導体を用いた半導体チップであっても構わない。また、
上記種々の半導体装置が接続される配線基板としては、
上述のガラス基板１８の他にプリント基板,セラミック
基板,金属ベース基板あるいはフレキシブル基板等一般
の配線基板を用いることもできる。また、上記種々の半
導体装置を種々の配線基板に接着する接着剤としては、
上記光硬化性接着剤１７の他に熱硬化性接着剤を用いて
も構わない。The semiconductor devices 11 and 23 may be semiconductor chips using a compound semiconductor such as GaAs or InP in addition to the above silicon chips. Also,
As a wiring board to which the above various semiconductor devices are connected,
In addition to the glass substrate 18 described above, a general wiring substrate such as a printed substrate, a ceramic substrate, a metal base substrate or a flexible substrate can be used. Further, as an adhesive for bonding the above various semiconductor devices to various wiring boards,
In addition to the photo-curable adhesive 17, a thermosetting adhesive may be used.
【００１８】上記実施例においては、高分子をコアとす
る球１５の表面にＡuメッキ１６を施した微小粒子１４
を半導体装置１１上の入出力電極１２と配線基板上の配
線電極１９とを接続する介在物として用いている。しか
しながら、この発明はこれに限定されるものではなく、
金バンプや銅バンプ等のバルキーなバンプを介在物とし
て用いることができることは言うまでもない。In the above embodiment, the fine particles 14 in which the surface of the sphere 15 having the polymer core is plated with Au 16
Is used as an interposition that connects the input / output electrode 12 on the semiconductor device 11 and the wiring electrode 19 on the wiring board. However, the present invention is not limited to this,
It goes without saying that bulky bumps such as gold bumps and copper bumps can be used as inclusions.
【００１９】[0019]
【発明の効果】以上より明らかなように、この発明の半
導体装置の接続方法は、半導体装置あるいは配線基板の
いずれか一方における電極側の表面の上記半導体装置の
表面より狭い領域に接着剤を供給して、上記半導体装置
を配線基板上に接続して仮止めし、その後上記半導体装
置と配線基板との間隙部における残りの全ての領域に接
着剤を供給して上記半導体装置を完全に封止するように
したので、仮止めの状態で電気的テストを実施すること
ができる。しかも、上記仮止め状態での接着剤による接
着面積は上記半導体装置の接続面積よりもかなり小さい
ので、従来の接続方法よりも小さな力で上記半導体装置
を除去できる。したがって、この発明によればリペアを
容易にできるのである。As is apparent from the above, according to the method for connecting a semiconductor device of the present invention, an adhesive is supplied to a region narrower than the surface of the semiconductor device on the electrode side surface of either the semiconductor device or the wiring board. Then, the semiconductor device is connected to the wiring substrate and temporarily fixed, and then the adhesive is supplied to all the remaining regions in the gap between the semiconductor device and the wiring substrate to completely seal the semiconductor device. Since this is done, the electrical test can be carried out in the temporarily fixed state. Moreover, since the adhesive area of the adhesive in the temporarily fixed state is considerably smaller than the connection area of the semiconductor device, the semiconductor device can be removed with a force smaller than that of the conventional connection method. Therefore, according to the present invention, repair can be easily performed.
【図１】この発明の半導体装置の接続方法における第１
段階での光硬化性接着剤の供給状態を示す図である。FIG. 1 is a diagram showing a first method of connecting a semiconductor device according to the present invention.
It is a figure which shows the supply state of the photocurable adhesive agent in a step.
【図２】半導体装置を仮止めした状態を示す図である。FIG. 2 is a diagram showing a state in which a semiconductor device is temporarily fixed.
【図３】半導体装置の接続工程が終了した状態を示す図
である。FIG. 3 is a diagram showing a state in which a semiconductor device connection process is completed.
【図４】半導体装置の入出力電極付近の拡大断面図であ
る。FIG. 4 is an enlarged cross-sectional view near the input / output electrodes of the semiconductor device.
【図５】微小粒子の構造を示す図である。FIG. 5 is a diagram showing a structure of fine particles.
【図６】従来の半導体装置の接続方法によってセラミッ
ク基板上に半導体装置を接続した状態を示す図である。FIG. 6 is a diagram showing a state in which semiconductor devices are connected on a ceramic substrate by a conventional semiconductor device connection method.
１１,２３…半導体装置、 １２,２４…入
出力電極、１４,２５…微小粒子、 １７
…光硬化性接着剤、１８…ガラス基板、
１９…配線電極、２０…液晶セル。11, 23 ... Semiconductor device, 12, 24 ... Input / output electrodes, 14, 25 ... Microparticles, 17
… Photocurable adhesive, 18… Glass substrate,
19 ... Wiring electrodes, 20 ... Liquid crystal cell.
Claims (1)
のうち少なくとも一方の上に少なくとも表面層が電気伝
導性を有する介在物を設け、この介在物を介して上記配
線基板上に上記半導体装置を接着剤によってフェイスダ
ウンで加圧接続する半導体装置の接続方法であって、 上記半導体装置および配線基板のいずれか一方における
電極側の表面の上記半導体装置の表面より狭い領域に、
上記半導体装置を配線基板上に接続した際に上記半導体
装置と配線基板とが対向している面積よりも小さな領域
を覆うだけの量の接着剤を供給し、 上記半導体装置を配線基板上にフェイスダウンで加圧接
触させ、上記接着剤を硬化させて上記半導体装置を配線
基板上に接続し、 その後、上記半導体装置と配線基板との間隙部における
残りの全ての領域にも接着剤を供給して硬化させること
を特徴とする半導体装置の接続方法。1. An inclusion having an electrically conductive surface layer is provided on at least one of an electrode on a semiconductor device and an electrode on a wiring board, and the semiconductor is formed on the wiring board via the inclusion. A method of connecting a semiconductor device in which a device is pressure-bonded face down with an adhesive, in a region narrower than a surface of the semiconductor device on a surface on an electrode side in one of the semiconductor device and the wiring board,
When the semiconductor device is connected to the wiring board, the adhesive is supplied in an amount enough to cover an area smaller than the area where the semiconductor device and the wiring board face each other, and the semiconductor device is placed on the wiring board with a face. The semiconductor device is connected to the wiring board by contacting it with pressure down to cure the adhesive, and then the adhesive is supplied to all the remaining areas in the gap between the semiconductor device and the wiring board. A method of connecting a semiconductor device, which comprises curing by curing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6226692A JP2723747B2 (en) | 1992-03-18 | 1992-03-18 | Semiconductor device connection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6226692A JP2723747B2 (en) | 1992-03-18 | 1992-03-18 | Semiconductor device connection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267390A true JPH05267390A (en) | 1993-10-15 |
| JP2723747B2 JP2723747B2 (en) | 1998-03-09 |
Family
ID=13195177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6226692A Expired - Fee Related JP2723747B2 (en) | 1992-03-18 | 1992-03-18 | Semiconductor device connection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2723747B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6940180B1 (en) | 1996-09-05 | 2005-09-06 | Seiko Epson Corporation | Semiconductor device connecting structure, liquid crystal display unit based on the same connecting structure, and electronic apparatus using the same display unit |
-
1992
- 1992-03-18 JP JP6226692A patent/JP2723747B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6940180B1 (en) | 1996-09-05 | 2005-09-06 | Seiko Epson Corporation | Semiconductor device connecting structure, liquid crystal display unit based on the same connecting structure, and electronic apparatus using the same display unit |
| KR100511121B1 (en) * | 1996-09-05 | 2005-11-21 | 세이코 엡슨 가부시키가이샤 | Connection structure and method of semiconductor element, liquid crystal display device using the structure and electronic device using the same |
| US7084517B2 (en) | 1996-09-05 | 2006-08-01 | Seiko Epson Corporation | Semiconductor device connecting structure, liquid crystal display unit based on the same connecting structure, and electronic apparatus using the same display unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2723747B2 (en) | 1998-03-09 |
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