JPH0526736Y2 - - Google Patents
Info
- Publication number
- JPH0526736Y2 JPH0526736Y2 JP7810885U JP7810885U JPH0526736Y2 JP H0526736 Y2 JPH0526736 Y2 JP H0526736Y2 JP 7810885 U JP7810885 U JP 7810885U JP 7810885 U JP7810885 U JP 7810885U JP H0526736 Y2 JPH0526736 Y2 JP H0526736Y2
- Authority
- JP
- Japan
- Prior art keywords
- valve
- line
- vent
- growth furnace
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002994 raw material Substances 0.000 claims description 29
- 239000002131 composite material Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 47
- 239000012159 carrier gas Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000012808 vapor phase Substances 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
この考案は、半導体薄膜デバイスなどの製造技
術の一つである気相多層薄膜結晶成長法に用いる
ガス供給バルブに関するものである。[Detailed Description of the Invention] [Industrial Field of Application] This invention relates to a gas supply valve used in a vapor phase multilayer thin film crystal growth method, which is one of the manufacturing techniques for semiconductor thin film devices and the like.
基板上に形成する多相薄膜結晶の成長に必要な
原料を、全てガス状で供給する気相多層薄膜成長
法を実施する装置は、例えば第５図に示すように
成長炉１の入口に通じる成長炉ライン２と、排気
装置３に通じるベントライン４と、成長炉１と排
気装置３を通じる排気路５とからなつている。
The apparatus for carrying out the vapor phase multilayer thin film growth method, which supplies all the raw materials necessary for the growth of the multiphase thin film crystal formed on the substrate in gaseous form, is connected to the entrance of the growth furnace 1, as shown in FIG. 5, for example. It consists of a growth furnace line 2, a vent line 4 leading to an exhaust system 3, and an exhaust path 5 communicating between the growth furnace 1 and the exhaust system 3.
また、成長炉ライン２には複数の原料ガス供給
路６をそれぞれ成長炉用バルブ７を介して接続
し、この各供給路６の各バルブ７の手前の部分
と、前記ベントライン４とをそれぞれベント用バ
ルブ８を有するバイパス路９により連通させる。 Further, a plurality of raw material gas supply paths 6 are connected to the growth furnace line 2 through respective growth furnace valves 7, and the portions of each supply path 6 in front of each valve 7 are connected to the vent line 4, respectively. A bypass passage 9 having a vent valve 8 is used for communication.
上記の装置の場合、各原料ガスは、成長炉１へ
導入されるか否かに無関係に、常に一定流量で各
供給路６へ流されており、かつ、各ライン２，４
には一定流量のキヤリヤガスが流れている。成長
炉へガスを供給する場合はそのガスの供給路６の
バルブ７を開き、バイパス路９のバルブ８をとじ
る。 In the case of the above-mentioned apparatus, each raw material gas is always flowed to each supply path 6 at a constant flow rate regardless of whether it is introduced into the growth furnace 1, and each line 2, 4
A constant flow of carrier gas is flowing through. When supplying gas to the growth furnace, the valve 7 of the gas supply path 6 is opened, and the valve 8 of the bypass path 9 is closed.
また、成長炉１へ供給しないガスの供給路６で
はバルブ７を閉じバルブ８を開いておく。この
際、成長炉ライン２とベントライン４とは通常、
圧力差がないようにする。 In addition, in the gas supply path 6 that is not supplied to the growth furnace 1, the valve 7 is closed and the valve 8 is left open. At this time, the growth furnace line 2 and vent line 4 are usually
Make sure there is no pressure difference.
前記のような装置を用いると、ベントラインが
なく、ガス供給路に設けたバルブの開閉のみによ
つて成長炉への原料ガスの導入と遮断を行なう装
置に比較して、変動要因が少なくなり、原料ガス
の流量が安定し、ガスの切換えが急峻に行えると
いう利点がある。 When the above-mentioned device is used, there are fewer fluctuation factors compared to a device that does not have a vent line and introduces and shuts off the raw material gas to the growth reactor only by opening and closing a valve installed in the gas supply path. This has the advantage that the flow rate of the raw material gas is stable and the gas can be switched rapidly.
このような、利点のある原料ガス供給装置を構
成するために、従来では、図示は省略してあるが
単独のバルブをパイプにより連結したもの、第６
図のように成長炉ライン２とベントライン４の切
換えを行なう２個のバルブ７，８を１個のブロツ
クに集積化して１個の三方バルブ１１とし、これ
を各原料ガス毎に設けてパイプにより連続したも
の、第７図のように、１個のブロツク１２に成長
炉ライン２を通し、このブロツク１２内に全ての
バルブ７，８を集積化し、ベントライン４をパイ
プにより連結したものなどがあつた。 In order to configure such an advantageous raw material gas supply device, conventionally, although not shown in the drawings, a single valve connected by a pipe, a sixth valve, etc.
As shown in the figure, the two valves 7 and 8 for switching between the growth furnace line 2 and the vent line 4 are integrated into one block to form one three-way valve 11, which is installed for each raw material gas and connected to the pipe. For example, as shown in Fig. 7, the growth furnace line 2 is passed through one block 12, all the valves 7 and 8 are integrated within this block 12, and the vent line 4 is connected by a pipe. It was hot.
上記のような従来の各装置は何れも大型となる
ため、広いスペースが必要であり、成長炉ライン
が長くなつて原料ガスの組成切り換えの急峻性が
ぼけ、また、原料ガスの成長炉ラインとベントラ
インに通じる径路が対称でなく、従つて原料ガス
から見たインピーダンス（流れ難さ）が異なるた
め、原料ガスを成長炉ラインとベントラインの間
で切り換える際の流量変動の要因となるなどの問
題があつた。
Each of the conventional devices mentioned above is large and requires a large space, and the growth furnace line becomes long, making it difficult to change the composition of the raw material gas. The path leading to the vent line is not symmetrical, and therefore the impedance (difficulty of flow) seen from the source gas is different, which can cause flow rate fluctuations when switching the source gas between the growth furnace line and the vent line. There was a problem.
上記の問題点を解決するために、この考案は１
個の柱状のブロツク中に長手方向の成長炉ライン
とベントラインを対称位置に平行させて設け、こ
のブロツクの一方の側に設けた複数の原料ガス供
給路は、上記成長炉ラインと上記ベントラインか
ら等距離の部分で等角度に分岐させて、２叉の径
路とし、その一方は上記成長炉ラインに設けた複
数の弁口に通じる成長炉用径路、他方は上記ベン
トラインに設けた複数の弁口に通じるベント用径
路とし、上記ブロツクの他方の側にも、前記各原
料ガス供給路より軸方向に若干ずれた位置で、か
つ、上記各原料ガス供給路と正反対の向きの複数
の他方の原料ガス供給路を設け、この他方の各原
料ガス供給路も上記成長炉ラインと上記ベントラ
インから等距離の部分で等角度に分岐させて前記
２叉の径路と正反対の向きの他方の２叉の径路と
し、その一方は上記成長炉ラインに設けた前記各
弁口の隣に位置するように、上記成長炉ラインに
設けた各弁口に通じる成長炉用径路、他方は上記
ベントラインに設けた前記各弁口に隣に位置する
ように、上記ベントラインに設けた各弁口に通じ
るベント用径路とし、上記成長炉ラインの各弁口
と、この各弁口を開閉する弁体によりそれぞれ成
長炉用バルブを構成するとともに、上記ベントラ
インの各弁口と、この各弁口を開閉する弁体によ
りそれぞれベント用バルブを構成し、上記各成長
炉用バルブとベント用バルブに対応する本体の外
側には各成長炉用バルブとベント用バルブの弁体
の駆動装置を設け、上記成長炉ラインの隣接する
成長炉用バルブの軸芯が、上記成長炉ラインを軸
として交互に一定の角度差をもつ配置とし、上記
ベントラインの隣接するベント用バルブの軸芯
も、上記ベントラインを軸として交互に一定の角
度差をもつ配置とした気相成長用複合ガスバルブ
を提供する。
In order to solve the above problems, this idea is 1.
A growth furnace line and a vent line in the longitudinal direction are provided parallel to each other in symmetrical positions in a columnar block, and a plurality of raw material gas supply passages provided on one side of this block are connected to the growth furnace line and the vent line. The paths are branched at equal angles at equal distances from the above to form a two-pronged path, one of which is a path for the growth furnace that leads to the plurality of valve ports provided in the growth furnace line, and the other is a path for the growth furnace that leads to the plurality of valve ports provided in the vent line. A vent passage leading to the valve port, and on the other side of the block, a plurality of other gas supply passages are provided at positions slightly offset in the axial direction from each of the raw material gas supply passages, and in a direction directly opposite to each of the raw material gas supply passages. The other two raw material gas supply passages are also branched at equal angles at equal distances from the growth furnace line and the vent line to form the other two in the opposite direction to the two pronged paths. A forked path, one of which is located next to each of the valve ports provided in the growth furnace line, and a growth furnace path that leads to each valve port provided in the growth furnace line, and the other path is connected to the vent line. A vent path leading to each valve port provided in the vent line is provided so as to be located adjacent to each valve port provided in the growth furnace line, and a vent path is provided by each valve port in the growth furnace line and a valve body for opening and closing each valve port. Each of them constitutes a growth reactor valve, and each of the valve ports of the vent line and the valve body that opens and closes each of these valve ports respectively constitute a vent valve, and corresponds to each of the above growth reactor valves and vent valves. A drive device for the valve bodies of each growth reactor valve and vent valve is provided on the outside of the main body, and the axes of adjacent growth reactor valves in the growth reactor line are alternately set at a constant level with the growth reactor line as the axis. To provide a composite gas valve for vapor phase growth, in which the valves for venting adjacent to the vent line are arranged with a certain angular difference, and the axes of the vent valves adjacent to the vent line are also arranged with a constant angular difference with the vent line as the axis.
この考案は、上記の構成であるから、成長炉ラ
インとベントラインには従来と同様に一定流量の
キヤリヤガスを流しておく。また、原料ガス供給
路からの各原料ガスはそれぞれ成長炉用径路とベ
ント用径路に供給されている。
Since this invention has the above-mentioned configuration, a constant flow rate of carrier gas is allowed to flow through the growth furnace line and vent line as in the prior art. Further, each source gas from the source gas supply path is supplied to the growth furnace path and the vent path, respectively.
従つて、成長炉用バルブが開き、ベント用バル
ブが閉じている部分に属する原料ガス供給路から
供給されたガスは、開いている弁口から成長炉ラ
インに流入してキヤリアガスとともに成長炉へと
供給される。 Therefore, the gas supplied from the source gas supply path that belongs to the part where the growth furnace valve is open and the vent valve is closed flows into the growth furnace line from the open valve port and flows into the growth furnace together with the carrier gas. Supplied.
また、成長炉用バルブが閉じ、ベント用バルブ
が開いている部分に属する原料ガス供給路から供
給されたガスは開いている弁口からベントライン
に流入して排気装置から排気される。 Furthermore, the gas supplied from the raw material gas supply path belonging to the portion where the growth reactor valve is closed and the vent valve is open flows into the vent line through the open valve port and is exhausted from the exhaust device.
〔実施例〕
第１図ないし第４図に示す実施例において、１
５は１個のブロツクであり、その横断面の形状は
第３図、第４図のように６角形である。このブロ
ツク１５中には成長炉ライン２とベントライン４
とが平行に設けてあるが、その位置は第３図、第
４図のように６角形の横断面の長い方の対角線上
において、ブロツク１５の中心線から一定の距離
となつている。[Example] In the example shown in FIGS. 1 to 4, 1
5 is one block, and its cross section is hexagonal as shown in FIGS. 3 and 4. This block 15 includes a growth furnace line 2 and a vent line 4.
are provided parallel to each other, but their positions are at a constant distance from the center line of the block 15 on the longer diagonal line of the hexagonal cross section as shown in FIGS. 3 and 4.
成長炉用バルブ７とベント用バルブ８はそれぞ
れブロツク内に設けるが、この各バルブ７，８の
配置は各ライン２，４を軸として交互に適当な角
度差（図示例では90°）をもたせる。すなわち、
バルブ７は第３図、第４図のように、成長炉ライ
ン２に90°の角度差をもつて交互に設けた弁口と、
この弁口を開閉する弁体からなつている。また、
バルブ８も第３図、第４図のように、ベントライ
ン４に90°の角度差をもつて交互に設けた弁口と、
この弁口を開閉する弁体からなつている。また、
各供給路６は第３図、第４図のように交互にブロ
ツク１５の反対側からブロツク１５の中心に向け
て設け、ブロツク１５内において等角度に分岐し
て２叉の経路１７，１８として各バルブ７，８に
達せしめる。 The growth reactor valve 7 and the vent valve 8 are provided in each block, and the valves 7 and 8 are arranged alternately with appropriate angle differences (90° in the illustrated example) around the lines 2 and 4. . That is,
As shown in FIGS. 3 and 4, the valves 7 have valve ports provided alternately in the growth furnace line 2 with an angle difference of 90°,
It consists of a valve body that opens and closes this valve port. Also,
As shown in FIGS. 3 and 4, the valve 8 also has valve ports provided alternately at an angle difference of 90° on the vent line 4,
It consists of a valve body that opens and closes this valve port. Also,
Each supply path 6 is provided alternately from the opposite side of the block 15 toward the center of the block 15 as shown in FIGS. 3 and 4, and branches at equal angles within the block 15 to form two-pronged paths 17 and 18. Each valve 7,8 is reached.
なお、第２図ないし第４図の１９，２０はエア
作動などからなる各バルブの駆動装置である。 Note that reference numerals 19 and 20 in FIGS. 2 to 4 indicate driving devices for each valve, which are operated by air or the like.
上記の実施例の場合も、ブロツク１５に設けた
成長炉ライン２とベントライン４には、一定流量
のキヤリヤガスを流しておき各原料ガス供給路６
にはそれぞれ所定の原料ガスを供給しておく。 In the case of the above embodiment as well, a constant flow rate of carrier gas is allowed to flow through the growth furnace line 2 and vent line 4 provided in the block 15.
A predetermined raw material gas is supplied to each of them.
そして、所望のガスが供給されているガス供給
路６に属する成長炉用バルブ７を開き、ベント用
バルブ８を閉じると、開放されたバルブ７の弁口
に所望のガスが流入して成長炉ライン２を流れて
いるキヤリヤガスとともに成長炉１に供給され
る。 Then, when the growth furnace valve 7 belonging to the gas supply path 6 to which the desired gas is supplied is opened and the vent valve 8 is closed, the desired gas flows into the opened valve port of the valve 7 and is supplied to the growth furnace. It is supplied to the growth furnace 1 together with the carrier gas flowing through the line 2.
また、成長炉用バルブ７が閉じ、ベント用バル
ブ８が開いている部分においては、原料ガス供給
路６から流入したガスは開いているバルブ８の弁
口からベントライン４に流入してキヤリヤガスと
共に排気装置３か排出される。 In addition, in the part where the growth reactor valve 7 is closed and the vent valve 8 is open, the gas flowing from the raw material gas supply path 6 flows into the vent line 4 from the open valve 8 and together with the carrier gas. Exhaust device 3 is exhausted.
この考案は上記のように、１個の柱状のブロツ
ク中に成長炉ラインとベントラインを平行に設
け、ブロツクの両側にはそれぞれ複数の原料ガス
供給路を設け、ブロツク内には上記原料ガスを成
長炉ラインまたはベントラインに通じる成長炉用
バルブやベント用バルブなどを設けて原料ガス供
給系をコンパクトにしたから、気相多層薄膜結晶
成長法を実施する装置内に占めるガスバルブのス
ペースを小さくできる。成長炉ラインおよびベン
トラインに通じる成長炉用バルブとベント用バル
ブの配置を、隣接するバルブ間で、成長炉ライン
とベントラインを軸として、交互に適当な角度差
をもたせ、原料ガス供給路と各バルブを通じる径
路は成長炉ラインとベントラインから等距離の部
分で等角度に分岐させた２叉とすることにより原
料ガスの成長炉ラインとベントラインへ通じる径
路のインピーダンスを同じにしたので、成長炉ラ
インとベントライン間での原料ガスの切換時の流
量の変動を抑制でき、柱状のブロツクの一方の側
に設けた複数の原料ガス供給路に対し、軸方向に
若干ずれた位置で、かつ上記原料ガス供給路と正
反対の位置に他方の複数の原料ガス供給路を設け
たので各バルブの軸方向の配置の間隔を最小にで
きることとあいまつて成長炉ラインが短くなり、
原料ガスの組成の切換えが急峻にできる。
As mentioned above, this idea is based on the fact that a growth furnace line and a vent line are provided in parallel in one columnar block, and a plurality of raw material gas supply paths are provided on each side of the block, and the raw material gas is supplied inside the block. Since we have made the raw material gas supply system more compact by installing growth furnace valves and vent valves that communicate with the growth furnace line or vent line, we can reduce the space occupied by the gas valves in the equipment that performs the vapor phase multilayer thin film crystal growth method. . The growth furnace valves and vent valves leading to the growth furnace line and vent line are arranged alternately with appropriate angular differences between adjacent valves, with the growth furnace line and vent line as the axes. The path leading through each valve is bifurcated at equal angles at equal distances from the growth furnace line and vent line, so that the impedance of the path leading to the growth furnace line and vent line for the raw material gas is the same. Fluctuations in the flow rate when switching the raw material gas between the growth furnace line and the vent line can be suppressed. In addition, since the other plurality of raw material gas supply passages are provided at positions directly opposite to the raw material gas supply passages, the axial spacing between the valves can be minimized, and together with this, the growth furnace line can be shortened.
The composition of the raw material gas can be changed rapidly.
従つて、この考案のガスバルブを用いることに
より多層薄膜成長、特に多層化合物半導体ヘテロ
結合成長におけるヘテロ界面の急峻性が改善され
る。 Therefore, by using the gas valve of this invention, the steepness of the heterointerface in multilayer thin film growth, especially multilayer compound semiconductor heterojunction growth, can be improved.
第１図はこの考案のガスバルブの一部を省略し
た系統図、第２図はこの考案のガスバルブの一実
施例を示す要部縦断正面図、第３図は第２図Ａ−
Ａ線の縦断側面図、第４図は第２図Ｂ−Ｂ線の縦
断側面図、第５図ないし第７図は従来のガスバル
ブの各例を示す系統図である。
２……成長炉ライン、４……ベントライン、６
……原料ガス供給路、７，８……バルブ、１５…
…ブロツク、１７，１８……径路。
Fig. 1 is a system diagram with some parts omitted of the gas valve of this invention, Fig. 2 is a longitudinal sectional front view of main parts showing an embodiment of the gas valve of this invention, and Fig. 3 is Fig. 2A-
FIG. 4 is a longitudinal side view taken along line A, FIG. 4 is a longitudinal side view taken along line B--B in FIG. 2, and FIGS. 5 to 7 are system diagrams showing examples of conventional gas valves. 2...Growth furnace line, 4...Vent line, 6
...Raw material gas supply path, 7, 8...Valve, 15...
...Block, 17, 18...route.
Claims (1)
インとベントラインを対称位置に平行させて設
け、このブロツクの一方の側に設けた複数の原料
ガス供給路は、上記成長炉ラインと上記ベントラ
インから等距離の部分で等角度に分岐させて、２
叉の経路とし、その一方は上記成長炉ラインに設
けた複数の弁口に通じる成長炉用経路、他方は上
記ベントラインに設けた複数の弁口に通じるベン
ト用経路とし、上記ブロツクの他方の側にも、前
記各原料ガス供給路より軸方向に若干ずれた位置
で、かつ上記各原料ガス供給路と正反対の向きの
複数の他方の原料ガス供給路を設け、この他方の
各原料ガス供給路も上記成長炉ラインと上記ベン
トラインから等距離の部分で等角度に分岐させて
前記２叉の経路と正反対の向きの他方の２叉の経
路とし、その一方は上記成長炉ラインに設けた前
記各弁口の隣に位置するように、上記成長炉ライ
ンに設けた各弁口に通じる成長炉用経路、他方は
上記ベントラインに設けた前記各弁口の隣に位置
するように、上記ベントラインに設けた各弁口に
通じるベント用経路とし、上記成長炉ラインの各
弁口と、この各弁口を開閉する弁体によりそれぞ
れ成長炉用バルブを構成するとともに、上記ベン
トラインの各弁口と、この各弁口を開閉する弁体
によりそれぞれベント用バルブを構成し、上記各
成長炉用バルブとベント用バルブに対応する本体
の外側には各成長炉用バルブとベント用バルブの
弁体の駆動装置を設け、上記成長炉ラインの隣接
する成長炉用バルブの軸芯が、上記成長炉ライン
を軸として交互に一定の角度差をもつ配置とし、
上記ベントラインの隣接するベント用バルブの軸
芯も、上記ベントラインを軸として交互に一定の
角度差をもつ配置とした気相成長用複合ガスバル
ブ。 A growth furnace line and a vent line in the longitudinal direction are provided parallel to each other in symmetrical positions in one columnar block, and a plurality of raw material gas supply passages provided on one side of this block are connected to the growth furnace line and the vent line in the longitudinal direction. Branch at equal angles at equal distances from the line, and
One of the paths is a growth furnace path leading to a plurality of valve ports provided in the growth furnace line, the other is a vent path leading to a plurality of valve ports provided in the vent line, and Also on the side, a plurality of other raw material gas supply passages are provided at positions slightly shifted from each of the raw material gas supply passages in the axial direction and in a direction directly opposite to each of the raw material gas supply passages, and each of the other raw material gas supply passages is provided. The paths are also branched at equal angles at parts equidistant from the growth furnace line and the vent line to form another two-pronged path in the opposite direction to the two-pronged path, one of which is provided in the growth furnace line. The growth furnace passage leading to each valve port provided in the growth furnace line is located next to each of the valve ports, and the other is located next to each valve port provided in the vent line. The vent path leads to each valve port provided in the vent line, and each valve port in the growth reactor line and a valve body that opens and closes each valve port constitute a growth reactor valve, and each port in the vent line The valve port and the valve body that opens and closes each valve port constitute a vent valve, and the outside of the main body corresponding to each growth reactor valve and vent valve is provided with a valve for each growth reactor and a vent valve. A driving device for a valve body is provided, and the axes of adjacent growth furnace valves in the growth furnace line are arranged to alternately have a certain angular difference with the growth furnace line as an axis,
In the composite gas valve for vapor phase growth, the axes of vent valves adjacent to the vent line are arranged alternately with a certain angle difference with the vent line as the axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7810885U JPH0526736Y2 (en) | 1985-05-24 | 1985-05-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7810885U JPH0526736Y2 (en) | 1985-05-24 | 1985-05-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61195043U JPS61195043U (en) | 1986-12-04 |
| JPH0526736Y2 true JPH0526736Y2 (en) | 1993-07-07 |
Family
ID=30621789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7810885U Expired - Lifetime JPH0526736Y2 (en) | 1985-05-24 | 1985-05-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526736Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060156980A1 (en) * | 2005-01-19 | 2006-07-20 | Samsung Electronics Co., Ltd. | Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus |
| US11559599B2 (en) | 2017-09-15 | 2023-01-24 | Sony Corporation | Scent retaining structure, method of manufacturing the scent retaining structure, and scent providing device |
-
1985
- 1985-05-24 JP JP7810885U patent/JPH0526736Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61195043U (en) | 1986-12-04 |
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